KR20110101427A - Light emitting device, method for fabricating the light emitting device and light emitting device package - Google Patents

Abstract

The light emitting device according to the embodiment includes a thermal conductive layer; A first conductivity type semiconductor layer on the heat conductive layer; An active layer on the first conductivity type semiconductor layer; A second conductivity type semiconductor layer on the active layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductivity type semiconductor layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device, a light emitting device manufacturing method and a light emitting device package.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. Light emitting diodes have the advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Accordingly, many researches are being conducted to replace existing light sources with light emitting diodes, and the use of light emitting diodes is increasing as a light source for lighting devices such as various lamps, liquid crystal displays, electronic displays, and street lamps that are used indoors and outdoors.

The embodiment provides a light emitting device, a light emitting device manufacturing method and a light emitting device package having a new structure.

The embodiment provides a light emitting device having improved heat dissipation efficiency.

The light emitting device according to the embodiment includes a thermal conductive layer; A first conductivity type semiconductor layer on the heat conductive layer; An active layer on the first conductivity type semiconductor layer; A second conductivity type semiconductor layer on the active layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductivity type semiconductor layer.

Method of manufacturing a light emitting device according to the embodiment, forming a thermal conductive layer; Forming a light emitting structure on the thermal conductive layer, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Removing the substrate; And forming a first electrode on the first conductive semiconductor layer and forming a second electrode on the second conductive semiconductor layer.

The light emitting device package according to the embodiment includes a body; A first lead electrode and a second lead electrode installed on the body; And a light emitting device disposed on the body and electrically connected to the first lead electrode and the second lead electrode, wherein the light emitting device includes a thermal conductive layer, a first conductive semiconductor layer on the thermal conductive layer, An active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode electrically connected to the first conductivity type semiconductor layer, and an electrical connection to the second conductivity type semiconductor layer And a second electrode.

The embodiment can provide a light emitting device having a new structure, a light emitting device manufacturing method, and a light emitting device package.

The embodiment can provide a light emitting device having improved heat dissipation efficiency.

1 is a side cross-sectional view of a light emitting device according to the first embodiment
2 is a side sectional view of a light emitting device according to a second embodiment;
3 is an enlarged view illustrating region A and region B of FIG. 2;
4 is a side sectional view of a light emitting device according to a third embodiment;
5 is a view showing another embodiment of the light emitting device of FIG.
6 to 10 illustrate a method of manufacturing a light emitting device according to the first embodiment.
11 to 13 illustrate a method of manufacturing a light emitting device according to the second embodiment.
14 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, and a light emitting device package according to embodiments will be described with reference to the accompanying drawings.

1 is a side cross-sectional view of a light emitting device 100 according to the first embodiment.

Referring to FIG. 1, the light emitting device 100 according to the first embodiment includes a thermal conductive layer 105, a first conductive semiconductor layer 112, an active layer 114, and a second conductive layer on the thermal conductive layer 105. The light emitting structure 110 formed by sequentially stacking the conductive semiconductor layer 116, the first electrode 150 formed on the first conductive semiconductor layer 112, and the second conductive semiconductor layer 116. ) May include a transparent electrode layer 120 formed on the transparent electrode layer 120, a second conductive semiconductor layer 116, and a second electrode 140 formed on the transparent electrode layer 120.

The thermal conductive layer 105 includes a compound semiconductor of at least one of Group 2 to Group 6 compounds, for example, Group 2 to Group 6, Group 3 to Group 5 and Group 4 to Group 4, for example, GaN, AlGaN, It may be formed of at least one of InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, MgO or ZnO-based semiconductor material, preferably may be formed of an AlN-based semiconductor material.

The thermal conductive layer 105 may have a thickness of, for example, 50 μm to 1000 μm. As the heat conductive layer 105 is formed in such a thick manner, the heat conductive layer 105 may serve as a substrate supporting the light emitting structure 110.

For example, the thermal conductive layer 105 may be grown on a substrate (not shown) formed of any one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, After the heat conductive layer 105 and the light emitting structure 110 are formed, the substrate (not shown) may be removed. However, this is not limitative.

In this case, the thermal conductive layer 105 is a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma-CVD (PECVD; plasma-enhanced chemical vapor deposition), molecular beam growth method (MBE; Molecular Beam Epitaxy) or Hydride Vapor Phase Epitaxy (HVPE) may be formed using any one method, but is not limited thereto.

The thermally conductive layer 105 is formed of a compound semiconductor material of at least one of a group 2 to 6 compound, for example, a group 2 to 6, 3 to 5, or 4 to 4 groups, preferably an AlN-based semiconductor material. Since the semiconductor material has a higher thermal conductivity than the substrate (not shown), the semiconductor material may effectively release heat generated from the light emitting structure 110.

For example, the thermal conductivity of AlN is 200 W / mk, and the sapphire single crystal widely used as the substrate (not shown) has a thermal conductivity of 35 W / mk. That is, since the thermal conductive layer 105 and the substrate (not shown) have a thermal conductivity difference of about several to several tens of times, when the thermal conductive layer 105 is used as a substrate, heat dissipation of the light emitting device is performed. The efficiency can be significantly improved.

In addition, since the heat conductive layer 105 is formed of a compound semiconductor material of at least one of Group 2 to Group 6 compounds, for example, Group 2 to Group 6, Group 3 to Group 5 and Group 4 to Group 4, the thermal conductive layer 105 ) And the lattice constant difference between the light emitting structure 110 is smaller than the difference in lattice constant between the substrate (not shown) and the light emitting structure 110, thereby forming the light emitting structure 110 on the thermal conductive layer 105. In the case of growth and formation, the light emitting structure 110 is formed to have better crystallinity.

In addition, since the heat conductive layer 105 is formed of a material having good light transmittance, and the refractive index of the light emitting structure 110 is substantially the same, light can be effectively extracted in the lateral direction of the heat conductive layer 105.

The light emitting structure 110 may be formed on the thermal conductive layer 105. The light emitting structure 110 may include, for example, the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116.

The light emitting structure 110 may be formed on the thermal conductive layer 105 by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), and plasma-enhanced chemical vapor deposition (PECVD). Deposition), Molecular Beam Epitaxy (MBE) or Hydride Vapor Phase Epitaxy (HVPE) may be formed using any one method, but is not limited thereto.

The first conductivity-type semiconductor layer 112 may include, for example, an n-type semiconductor layer, wherein the n-type semiconductor layer is In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y 1, 0 ≦ x + y ≦ 1), for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, or the like, and may be selected from n-type dopants such as Si, Ge, Sn, etc. May be doped.

The active layer 114 is formed of, for example, a semiconductor material having a compositional formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW: Multi Quantum Well), a quantum dot structure or a quantum line structure.

The active layer 114 may generate light by energy generated during recombination of electrons and holes provided from the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116. .

The second conductivity-type semiconductor layer 116 may be implemented, for example, as a p-type semiconductor layer, wherein the p-type semiconductor layer is In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y 1, 0 ≦ x + y ≦ 1), for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, and the like, and may be selected from Mg, Zn, Ca, Sr, Ba, and the like. P-type dopant may be doped.

The transparent electrode layer 120 may be formed on the second conductivity-type semiconductor layer 116 of the light emitting structure 110. The transparent electrode layer 120 may prevent current from being biased around the second electrode 140 by spreading the current.

The transparent electrode layer 120 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, Ni, Ag or Au using one or more can be implemented in a single layer or multiple layers.

Meanwhile, as shown in FIG. 1, the transparent electrode layer 120 may be formed so that the top surface of the second conductivity type semiconductor layer 116 is exposed at least partially. Alternatively, the transparent electrode layer 120 may be formed on substantially the entire area of the upper surface of the second conductive semiconductor layer 116, but is not limited thereto.

The second electrode 140 is formed on any one of the transparent electrode layer 120 and the second conductive semiconductor layer 116, or the transparent electrode layer 120 and the second conductive semiconductor layer 116. It can be formed on.

The second electrode 140 may provide power to the light emitting structure 110 together with the first electrode 150.

The second electrode 140 may be formed of, for example, a single layer or a multilayer structure including at least one of Au, Al, Ag, Ti, Cu, Ni, or Cr, but is not limited thereto.

A portion of the light emitting structure 110 may be formed to expose a portion of the top surface of the first conductivity type semiconductor layer 112. The first electrode 150 may be formed on the exposed upper surface of the first conductivity-type semiconductor layer 112. The first electrode 150 may be formed of, for example, a single layer or a multilayer structure including at least one of Au, Al, Ag, Ti, Cu, Ni, or Cr, but is not limited thereto.

However, the interface between the first electrode 150 and the first conductive semiconductor layer 112 may include Ti, Ni, Cr, or the like, which is a material having high adhesive strength. In addition, the uppermost layer of the first electrode 150 may include Au, Ti, and the like having high adhesive strength to facilitate wire bonding.

Hereinafter, the light emitting device 100A according to the second embodiment will be described in detail. However, the description overlapping with the above description will be omitted or briefly described.

2 is a side sectional view of a light emitting element 100A according to the second embodiment.

Referring to FIG. 2, the light emitting device 100A according to the second embodiment includes a thermal conductive layer 105, a first conductive semiconductor layer 112, an active layer 114, and a second conductive layer on the thermal conductive layer 105. The light emitting structure 110 formed by sequentially stacking the conductive semiconductor layer 116, the first upper electrode 150 formed on the first conductive semiconductor layer 112, and the second conductive semiconductor layer ( 116, a transparent electrode layer 120 formed on the transparent electrode layer 120, a second upper electrode 140 formed on the transparent electrode layer 120, a first pad 152 and a second pad formed under the thermal conductive layer 105 ( 142, a first connection electrode 154 electrically connecting the first upper electrode 150 and the first pad 152, the second upper electrode 140, and the second pad 142. A second connection electrode 144 electrically connecting the first connection electrode and a first insulating layer 161 and a second insulating layer 162 to insulate the first and second connection electrodes 144 and 154 from the light emitting structure 110. It may include.

The light emitting device 100A according to the second embodiment is the same as the light emitting device 100 according to the first embodiment except for the shape of the electrode.

The light emitting device 100A may be electrically connected to an external electrode by the first and second pads 152 and 142 formed under the thermal conductive layer 105 instead of wire bonding.

The first pad 152, the first connection electrode 154, and the first upper electrode 150 form a first electrode, and the second pad 132, the second connection electrode 144, and the second upper electrode are formed. 140 may form a second electrode.

In order to prevent the first connection electrode 154 of the first electrode and the light emitting structure 110 from being electrically shorted, the first connection electrode 154, the light emitting structure 110, and the thermal conductive layer ( The first insulating layer 161 may be formed between the 105. In addition, in order to prevent the second connection electrode 144 and the light emitting structure 110 of the second electrode from being electrically shorted, the second connection electrode 144, the light emitting structure 110, and the heat conduction. The second insulating layer 162 may be formed between the layers 105.

The first and second insulating layers 161 and 162 may include, for example, SiO ₂ , SiO _x , SiO _x N _y , It may be formed to include at least one of Si ₃ N ₄ , Al ₂ O ₃ , but is not limited thereto. The first and second insulating layers 161 and 162 may be formed by, for example, a deposition method in holes in which the connection electrodes 154 and 144 are formed.

3 is an enlarged view illustrating region A and region B of FIG. 2.

Referring to FIG. 3, the reflective layer 165 may be further formed between the first and second insulating layers 161 and 162. In this case, the first and second insulating layers 161 and 162 may be formed of a material having good light transmittance, and the reflective layer 165 may be formed of a material having high reflection efficiency. In this case, since the light is reflected by the reflective layer 165 and extracted to the outside, the luminous efficiency of the light emitting device 100A may be improved.

The light emitting device 100A may be connected to the external electrode through the first and second pads 142 and 152 without a wire, and thus may electrically connect the light emitting device 100A to the external electrode. The process can be made simple and efficient.

In addition, as described above, in the process of forming the first and second electrodes to penetrate the light emitting structure 110 and the heat conductive layer 105, the strength of the semiconductor material forming the heat conductive layer 105 is equal to that of sapphire. Since it is smaller than the strength of the material of the substrate can be easily carried out.

Hereinafter, the light emitting device 100B according to the third embodiment will be described in detail. However, the description overlapping with the above description will be omitted or briefly described.

4 is a side cross-sectional view of the light emitting device 100B according to the third embodiment.

Referring to FIG. 4, the light emitting device 100B according to the third exemplary embodiment includes a heat conductive layer 105, a first conductive semiconductor layer 112, an active layer 114, and a second conductive layer on the heat conductive layer 105. The light emitting structure 110 formed by sequentially stacking the conductive semiconductor layer 116, the first pad 152 and the second pad 142 formed under the thermal conductive layer 105, and the first conductive semiconductor. A first connection electrode 154 that electrically connects the layer 112 and the first pad 152, and an agent that electrically connects the second conductive semiconductor layer 116 and the second pad 142 to each other. And a second insulating electrode 144 and a first insulating layer 161 and a second insulating layer 162 that insulate the first and second connecting electrodes 144 and 154 from the light emitting structure 110.

The light emitting device 100B according to the third embodiment is the same as the light emitting devices 100 and 100A according to the first and second embodiments except for the shape of the electrode.

At least an upper region of the first connection electrode 154 may be in contact with the first conductivity type semiconductor layer 112, and thus may be electrically connected to the first conductivity type semiconductor layer 112. In addition, at least an upper region of the second connection electrode 144 may be in contact with the second conductivity type semiconductor layer 116 to be electrically connected to the second conductivity type semiconductor layer 116.

In addition, the first and second insulating layers 161 and 162 may be formed between the first and second connection electrodes 154 and 144, the light emitting structure 110, and the thermal conductive layer 105 to form the first and second connection electrodes ( The electrical short between the 154 and 144 and the light emitting structure 110 may be prevented.

However, as shown in FIG. 5, the first insulating layer 161 may not be formed between the first connection electrode 154, the light emitting structure 110, and the heat conductive layer 105. This is because the first connection electrode 154 does not penetrate the active layer 114 and the second conductive semiconductor layer 116, and thus there is little risk of an electrical short.

Hereinafter, a method of manufacturing the light emitting device 100 according to the first embodiment will be described in detail. However, the description overlapping with the above description will be omitted or briefly described.

6 to 10 illustrate a method of manufacturing the light emitting device 100 according to the first embodiment.

Referring to FIG. 6, the thermal conductive layer 105 and the light emitting structure 110 may be sequentially formed on a substrate 101.

The thermal conductive layer 105 and the light emitting structure 110 are, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD; Plasma- Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like, and the like, but are not limited thereto.

The thermal conductive layer 105 is formed to have a thickness of 50 μm to 1000 μm, and the dislocations generated by the lattice constant difference with the substrate 101 in the lower region of the thermal conductive layer 105 are moved to the upper region. As the number decreases, the upper region of the thermal conductive layer 105 has better crystallinity than the lower region.

In addition, since the light emitting structure 110 is formed after the heat conductive layer 105 is formed in such a thick manner, the light emitting structure 110 may have good crystallinity. In addition, since the lattice constant difference between the light emitting structure 110 and the thermal conductive layer 105 is smaller than the lattice constant difference between the substrate 101 and the light emitting structure 110, the light emitting structure 110 is further It may have good crystallinity.

Referring to FIG. 7, the substrate 101 may be removed. The substrate 101 may be removed by, for example, at least one of a laser lift off (LLO), a chemical etching method (CLO), or a physical polishing method. It is not limited.

Since the thermal conductive layer 105 is formed to have a thickness of 50 μm to 1000 μm, the light emitting structure 110 may be supported even when the substrate 101 is removed. In addition, even when the laser lift-off process is performed, the light emitting device may be prevented from being damaged.

Referring to FIG. 8, mesa etching may be performed on a portion M of the light emitting structure 110 to expose at least a portion of an upper surface of the first conductive semiconductor layer 112.

The mesa etching may be performed by dry etching or wet etching after forming a mask. The partial region M on which the mesa etching is performed may be preferably near the edge of the side region of the light emitting structure 110, but is not limited thereto.

Referring to FIG. 9, the transparent electrode layer 120 may be formed on the second conductive semiconductor layer 116.

The transparent electrode layer 120 may be formed in an entire area of the upper surface of the second conductive semiconductor layer 116 or in a partial area.

The transparent electrode layer 120 may be formed by any one of e-beam deposition, sputtering, and plasma enhanced chemical vapor deposition (PECVD), but is not limited thereto.

Referring to FIG. 10, the first electrode 150 is formed on the first conductive semiconductor layer 112, and on the second conductive semiconductor layer 116 or / and the transparent electrode layer 120. By forming the second electrode 140, the light emitting device 100 according to the first embodiment may be provided.

The first and second electrodes 140 and 150 may be formed by, for example, a deposition method or a plating method, but are not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 100A according to the second embodiment will be described in detail. However, the description overlapping with the above description will be omitted or briefly described.

6 to 9 are the same as the manufacturing method of the light emitting device 100 according to the first embodiment.

That is, the light emitting device 100A according to the second embodiment first forms a thermal conductive layer and a light emitting structure on a substrate (see FIG. 6), then removes the substrate (see FIG. 7), and then the light emitting structure. Mesa etching may be performed to partially expose the top surface of the first conductive semiconductor layer (see FIG. 8), and then a manufacturing process may be performed to form a transparent electrode layer on the second conductive semiconductor layer (FIG. 8). 9).

11 to 13 illustrate a method of manufacturing the light emitting device 100A according to the second embodiment.

Referring to FIG. 11, after the transparent electrode layer 120 is formed, the first hole H1 and the light emitting structure 110 penetrating the first conductive semiconductor layer 112 and the thermal conductive layer 105 are formed. And a second hole H2 penetrating the thermal conductive layer 105.

The first hole H1 and the second hole H2 may be formed by, for example, laser drilling or etching, but are not limited thereto.

Since the thermal conductive layer 105 has a smaller strength than that of the substrate 101, laser drilling or etching may be easily performed.

Meanwhile, in the light emitting device 100B according to the third embodiment, the first and second holes H1 and H2 are respectively formed of the first conductive semiconductor layer 112 and the second conductive semiconductor layer ( Except for forming up to 116, it is the same as the manufacturing method of the light emitting device 100A according to the second embodiment.

Referring to FIG. 12, the first and second insulating layers 161 and 162 may be formed on inner walls of the first and second holes H1 and H2. The first and second insulating layers 161 and 162 may be formed by, for example, an electron beam deposition, sputtering, or deposition method such as PECVD, but is not limited thereto.

In addition, a reflective layer may be further formed inside the first and second insulating layers 161 and 162.

Referring to FIG. 13, the first pad 152 and the second pad 142 are formed under the thermal conductive layer 105, and the first upper electrode 150 is formed on the first conductive semiconductor layer 112. ), A second upper electrode 140 is formed on the transparent electrode layer 120, and the first upper electrode 150 and the first pad 152 are electrically connected to the first hole H1. A first connection electrode 154 connecting to the second connection electrode and a second connection electrode 144 electrically connecting the second upper electrode 140 and the second pad 142 to the second hole H2. Thus, the light emitting device 100B according to the second embodiment can be provided.

The first pad 152, the first connection electrode 154, and the first upper electrode 150 form a first electrode, and the second pad 132, the second connection electrode 144, and the second upper electrode are formed. 140 may form a second electrode. The first electrode and the second electrode may be formed by a plating process or a deposition process.

<Light Emitting Device Package>

14 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 14, the light emitting device package according to the embodiment includes a body 20, a first lead electrode 31 and a second lead electrode 32 installed on the body 20, and the body 20. The light emitting device 100 according to the embodiment is installed and electrically connected to the first lead electrode 31 and the second lead electrode 32, and a molding member 40 surrounding the light emitting device 100. do.

The body 20 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 31 and the second lead electrode 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 31 and the second lead electrode 32 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.

The light emitting device 100 may be installed on the body 20 or on the first lead electrode 31 or the second lead electrode 32.

The light emitting device 100 may be electrically connected to the first lead electrode 31 and the second lead electrode 32 by any one of a wire method, a flip chip method, and a die bonding method.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

The light emitting device according to the embodiment (s) may be packaged in a semiconductor substrate such as a resin material or silicon, an insulating substrate, a ceramic substrate, or the like, and may be used as a light source such as an indicator device, a lighting device, or a display device. In addition, each embodiment is not limited to each embodiment, it can be selectively applied to other embodiments disclosed above, but is not limited to each embodiment.

The light emitting device package according to the embodiment may be applied to the light unit. The light unit may include a structure in which a plurality of light emitting device packages are arranged, and may include a display device, a lighting lamp, a traffic light, a vehicle headlamp, an electronic signboard, and the like.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

DESCRIPTION OF SYMBOLS 100 Light emitting element, 105 Thermal conductive layer 112, 1st conductive type semiconductor layer, 114: active layer, 116: 2nd conductive type semiconductor layer, 110: Light emitting structure, 120: Transparent electrode layer, 150: 1st electrode, 140 Second electrode

Claims (20)

Heat conducting layer;
A first conductivity type semiconductor layer on the heat conductive layer;
An active layer on the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer on the active layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
A light emitting device comprising a second electrode electrically connected to the second conductive semiconductor layer. The method of claim 1,
The thermal conductive layer is formed of at least one of GaN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, MgO and ZnO-based semiconductor material. The method of claim 2,
And a refractive index of the thermal conductive layer and a refractive index of the light emitting structure are the same. The method of claim 1,
The heat conductive layer has a thickness of 50 μm to 1000 μm. The method of claim 1,
The light emitting structure is formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The method of claim 1,
The first electrode is formed on the first conductive semiconductor layer, and the second electrode is formed on the second conductive semiconductor layer. The method of claim 1,
The first electrode may include a first upper electrode formed on the first conductive semiconductor layer, a first pad formed under the thermal conductive layer, the light emitting structure and the thermal conductive layer to pass through the first upper electrode and the first conductive electrode. A first connection electrode electrically connecting the pads,
The second electrode may include a second upper electrode formed on the second conductive semiconductor layer, a second pad formed under the thermal conductive layer, the light emitting structure and the thermal conductive layer to pass through the second upper electrode and the second conductive electrode. A light emitting device comprising a second connection electrode for electrically connecting the pad. The method of claim 1,
The first electrode includes a first connection electrode that penetrates the heat conductive layer and the light emitting structure and has at least an upper region in contact with the first conductive semiconductor layer, and a first pad under the heat conductive layer.
The second electrode includes a second connection electrode having at least an upper region of the second conductive semiconductor layer penetrating the thermal conductive layer and the light emitting structure, and a second pad under the thermal conductive layer. The method according to claim 7 or 8,
And a second insulating layer formed between the second connection electrode, the light emitting structure, and the thermal conductive layer. The method of claim 9,
A light emitting device in which a first insulating layer is formed between the first connection electrode, the light emitting structure, and the thermal conductive layer. Forming a thermally conductive layer;
Forming a light emitting structure on the thermal conductive layer, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
Removing the substrate; And
Forming a first electrode on the first conductive semiconductor layer and forming a second electrode on the second conductive semiconductor layer. 12. The method of claim 11,
And a lattice constant difference between the substrate and the light emitting structure is greater than a lattice constant difference between the heat conductive layer and the light emitting structure. 12. The method of claim 11,
The thermal conductivity of the thermally conductive layer is greater than the thermal conductivity of the substrate. 12. The method of claim 11,
The thermally conductive layer is formed of at least one of organometallic chemical vapor deposition, chemical vapor deposition, plasma chemical vapor deposition, molecular beam growth, or hydride vapor deposition. 12. The method of claim 11,
And the substrate is removed by at least one of laser lift-off, chemical etching, or physical polishing. 12. The method of claim 11,
Forming a first electrode on the first conductive semiconductor layer, and forming a second electrode on the second conductive semiconductor layer,
Forming first and second holes penetrating the light emitting structure and the thermal conductive layer; And
Forming a first connection electrode and a second connection electrode in the first hole and the second hole, respectively, and forming a first pad and a second pad under the thermal conductive layer. Body;
A first lead electrode and a second lead electrode installed on the body; And
A light emitting device installed on the body and electrically connected to the first lead electrode and the second lead electrode,
The light emitting device includes a thermal conductive layer, a first conductive semiconductor layer on the thermal conductive layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and the first conductive type. A light emitting device package comprising a first electrode electrically connected to a semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer. The method of claim 17,
The thermal conductive layer is a light emitting device package formed of at least one of GaN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, MgO and ZnO-based semiconductor materials. The method of claim 17,
The thermal conductive layer has a thickness of 50μm to 1000μm light emitting device package. The method of claim 17,
And a refractive index of the thermal conductive layer and a refractive index of the light emitting structure are the same.

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