KR20110073039A - Nitride semiconductor light emitting device, method of fabricating the same and liquid crystal display device having thereof - Google Patents

Abstract

PURPOSE: A nitride semiconductor light emitting diodes, a method for manufacturing the same, and a liquid crystal display device including the same are provided to improve the light extracting efficiency by adjusting the size and the alignment of metal patterns. CONSTITUTION: A groove is formed on the rear side of a substrate. Metal patterns(155) are formed by filling metal with the superior thermal conductivity in the groove. An n-type semiconductor layer(103), an active layer, a p-type semiconductor layer(105) are successively formed on the upper side of the substrate. The n-type semiconductor layer is composed of a nitride semiconductor. A p-electrode and an n-electrode are respectively formed on the p-type semiconductor layer and the n-type semiconductor layer. The metal includes aluminum, platinum, and palladium.

Description

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, a method of manufacturing the same, and a liquid crystal display device having the same. More specifically, a nitride semiconductor that supplies light to a liquid crystal display panel using a plurality of light emitting diodes (LEDs). A light emitting device, a method of manufacturing the same, and a liquid crystal display device having the same.

In general, light emitting devices using light emitting diodes have excellent monochromatic peak wavelengths, have excellent light efficiency, and can be miniaturized, and thus are widely used as various display devices and light sources.

Currently, light emitting devices mainly used for backlight units of flat panel displays (FPDs), lighting, outdoor billboards, such as liquid crystal displays (LCDs), are basically low power consumption and environmentally friendly. The consumption is increasing for such reasons.

In particular, a light emitting device used as a backlight unit of a liquid crystal display device has a high efficiency and low power consumption characteristics, and a backlight unit is manufactured using a small number of light emitting devices to lower costs.

1 is a cross-sectional view schematically showing a structure of a general nitride semiconductor light emitting device.

As shown in the drawing, a typical nitride semiconductor light emitting device includes a reflection cup 1 having a space therein, a first electrode structure 9a and a second electrode structure 9b provided on the reflection cup 1, and the The sapphire substrate 2 attached to the inside of the reflective cup 1 through the second electrode structure 9b, the n-type semiconductor layer 3 formed on the sapphire substrate 2, and the n-type semiconductor layer 3 A region exposed by the active layer 4 among the active layer 4 patterned to expose a portion of the corner region of the semiconductor layer, the p-type semiconductor layer 5 formed on the active layer 4, and the n-type semiconductor layer 3. And an p-electrode 6a formed on the p-type semiconductor layer 5.

In this case, the p-electrode 6a and the n-electrode 6b may be connected to the first electrode structure 9a and the second electrode structure 9b through wires 11, respectively.

Here, the n-type semiconductor layer 3, the active layer 4 and the p-type semiconductor layer 5 is formed of a nitride-based, for example GaN semiconductor.

In this case, since the nitride semiconductor light emitting device includes many defects, a lot of heat is generated when the light emitting device is driven. However, since the nitride semiconductor light emitting device does not have a homogeneous substrate, a sapphire substrate is used as a substitute material. Since the thermal conductivity of the sapphire substrate is not good, it is very difficult to release heat generated from the light emitting device to the outside.

In order to solve the heat dissipation problem, various methods such as application of a heat sink in the package process have been studied, but there are almost no methods for solving heat dissipation at the chip stage.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a nitride semiconductor light emitting device and a method of manufacturing the same, which are free from problems caused by environmental regulation of cold cathode fluorescent lamps.

Another object of the present invention is to provide a nitride semiconductor light emitting device and a method of manufacturing the same, which improve heat dissipation characteristics and improve light extraction efficiency.

Still another object of the present invention is to provide a liquid crystal display device having the nitride semiconductor light emitting device described above.

Further objects and features of the present invention will be described in the configuration and claims of the invention which will be described later.

In order to achieve the above object, the nitride semiconductor light emitting device of the present invention comprises a groove formed in a predetermined shape on the back of the substrate; A metal pattern formed by filling the inside of the groove with a metal having excellent thermal conductivity; An n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially formed of a nitride semiconductor on the substrate; And a p electrode and an n electrode formed on the p-type semiconductor layer and the n-type semiconductor layer, respectively.

A liquid crystal display device having a nitride semiconductor light emitting device of the present invention includes a liquid crystal display panel; And a groove formed in a predetermined shape on a rear surface of the substrate, a metal pattern formed by filling a metal having excellent thermal conductivity inside the groove, and an n-type semiconductor sequentially formed of a nitride semiconductor on the substrate. And a plurality of nitride semiconductor light emitting devices each having a layer, an active layer, a p-type semiconductor layer, and a p electrode and an n electrode formed on the p-type semiconductor layer and the n-type semiconductor layer, respectively.

The method of manufacturing a nitride semiconductor light emitting device of the present invention comprises the steps of forming a groove of a predetermined shape on the rear surface of the substrate; Filling the inside of the groove with a metal having excellent thermal conductivity to form a predetermined metal pattern; Forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer made of a nitride semiconductor on the substrate on which the metal pattern is formed; And forming a p electrode and an n electrode on the p-type semiconductor layer and the n-type semiconductor layer, respectively.

Another method of manufacturing a nitride semiconductor light emitting device of the present invention comprises the steps of sequentially forming an n-type semiconductor layer, an active layer and a p-type semiconductor layer made of a nitride semiconductor on the substrate; Forming a p electrode on the p-type semiconductor layer; Forming a groove having a predetermined shape from a rear surface of the substrate on which the p-electrode is formed to a part of the thickness of the n-type semiconductor layer; And filling the inside of the groove with a metal having excellent thermal conductivity to form a predetermined metal pattern.

As described above, the nitride semiconductor light emitting device according to the present invention, a method of manufacturing the same, and a liquid crystal display device having the same do not have the problems caused by environmental regulations such as those of cold cathode fluorescent lamps, and thus can appropriately cope with environmental regulations that are gradually strengthened. There is this.

In addition, the nitride semiconductor light emitting device according to the present invention, a method for manufacturing the same, and a liquid crystal display device having the same include removing a part of a sapphire substrate having low thermal conductivity and filling a metal having excellent thermal conductivity in a light emitting device using a nitride semiconductor. While improving the heat dissipation characteristics, by reducing the total reflection of the light by adjusting the size and placement of the metal pattern provides an effect of improving the light extraction efficiency.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the nitride semiconductor light emitting device according to the present invention, a method for manufacturing the same and a liquid crystal display device having the same.

FIG. 2 is a cross-sectional view schematically illustrating a structure of a liquid crystal display according to the present invention. In FIG. 2, a direct backlight structure in which light emitting devices are arranged in an array form below the liquid crystal display panel is illustrated.

However, the present invention is not limited to the direct type backlight structure, and the present invention can be applied to a side type backlight structure in which a light emitting device is provided on a side surface of the liquid crystal display panel.

As shown in the drawing, the liquid crystal display device 100 according to the present invention includes a backlight 140 including a liquid crystal display panel 110 and a plurality of light emitting elements 150 for supplying light to the liquid crystal display panel 110. It consists of.

The liquid crystal display panel 110 is formed of a transparent first substrate 110a, a second substrate 110b, and a liquid crystal layer (not shown) formed therebetween, and the second substrate 110b is a thin film transistor. And a thin film transistor substrate on which pixel electrodes are formed, and the first substrate 110a is a color filter substrate on which a color filter layer is formed.

In addition, a driving circuit unit 120 is provided on a side surface of the second substrate 110b to apply a signal to the thin film transistor and the pixel electrode formed on the second substrate 110b, respectively.

In this case, although not shown in the drawing, a plurality of gate lines and data lines defining a plurality of pixel regions are vertically and horizontally arranged on the second substrate 110b, and thin film transistors are provided in each pixel region to form the gate lines. Therefore, it is driven as a scan signal is applied from the outside. In addition, pixel electrodes are formed in the pixel regions, and as the thin film transistors are driven, image signals are input from the outside along the data lines.

In addition, the first substrate 110a is formed with a black matrix that blocks light from passing through the image non-display area and a color filter layer that implements actual colors. The first substrate 110a and the second substrate configured as described above are formed. The liquid crystal layer is formed between the substrates 110b.

3 is a cross-sectional view schematically showing the structure of a nitride semiconductor light emitting device according to the first embodiment of the present invention.

As shown in the drawing, the nitride semiconductor light emitting device according to the first embodiment of the present invention includes a reflection cup 101 having a space therein, a first electrode structure 109a and a first electrode structure provided on the reflection cup 101. The second electrode structure 109b, the substrate 102 attached to the inside of the reflective cup 101 through the second electrode structure 109b, the n-type semiconductor layer 103 formed on the substrate 102, and the n The active layer 104 of the active layer 104 patterned to expose a portion of the corner region of the type semiconductor layer 103, the p-type semiconductor layer 105 formed on the active layer 104, and the n-type semiconductor layer 103. And n-electrode 106b formed in the region exposed by () and p-electrode 106a formed on p-type semiconductor layer 105.

In this case, the p-electrode 106a and the n-electrode 106b may be connected to the first electrode structure 109a and the second electrode structure 109b through wires 111, respectively.

The n-type semiconductor layer 103, the active layer 104, and the p-type semiconductor layer 105 may be formed of a nitride based, for example, GaN semiconductor, and the substrate 102 may include sapphire and zinc. It may be formed of zinc oxide (ZnO), silicon carbide (SiC), aluminum nitride (AlN), or the like.

In this case, the nitride semiconductor light emitting device according to the first embodiment of the present invention removes a portion of the substrate 102 by forming a groove having a predetermined shape on the rear surface of the substrate 102, and silver (Ag) and aluminum (Al) therein. ) By improving the heat dissipation characteristics by inserting a metal pattern 155 made of a metal having excellent thermal conductivity such as platinum (Pt) and palladium (Pd), and adjusting the size and arrangement of the metal pattern 155 to provide light. By reducing the total reflection it is possible to improve the light extraction efficiency.

4A to 4C, the grooves formed in the substrate 102, that is, the cross-sectional shape of the metal pattern 155 may be polygons or hemispherical shapes such as filled triangles and rectangles. 5A through 5C, the cross-sectional shape of the metal pattern 155 may be polygonal or hemispherical such as a triangle, a rectangle, or the like, having a lower portion so as to have a predetermined thickness.

The grooves and metal patterns 155 of the substrate 102 may be formed before the light emitting diodes are formed on the substrate 102 or after the light emitting diodes are formed on the substrate 102.

In addition, the groove and the metal pattern 155 of the substrate 102 may be formed to have regularity or may be formed to have irregularity.

Hereinafter, a manufacturing process of the nitride semiconductor light emitting device according to the first embodiment of the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

6A through 6E are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device illustrated in FIG. 3, in which the groove and the metal pattern of the substrate are formed before the light emitting diode is formed on the substrate. The manufacturing process of is shown as an example.

As shown in FIG. 6A, a groove H having a predetermined shape is formed on the rear surface of the substrate 102 using a laser or the like.

In this case, the substrate 102 may be formed of sapphire, zinc oxide, silicon carbide, aluminum nitride, or the like.

In addition, the groove H formed in the substrate 102 may have regularity or irregularity.

Next, as shown in FIG. 6B, a predetermined metal pattern 155 is formed by filling the inside of the groove H with a metal having excellent thermal conductivity such as silver, aluminum, platinum, and palladium.

At this time, the figure shows a case in which the entirety of the inside of the groove H is filled with metal, for example. However, the present invention is not limited thereto, and the metal is applied to the inner surface of the groove H by a predetermined thickness. The lower metal pattern 155 may be formed to have a predetermined thickness in the groove H.

In addition, as described above, the metal pattern 155 may be polygonal or hemispherical, such as a triangle or a rectangle, and a general deposition method or plating method may be used.

In this case, in the case of using a metal having good reflectivity, the light leaking to the lower portion of the substrate 102 may be reflected or scattered and returned to the upper side, thereby increasing the luminance.

6C, the first semiconductor layer 103 ′, the second semiconductor layer 104 ′, and the third semiconductor layer 105 ′ are formed on the substrate 102 on which the metal pattern 155 is formed. ) Are formed sequentially.

In this case, the first semiconductor layer 103 ', the second semiconductor layer 104', and the third semiconductor layer 105 'are made of an n-type semiconductor, an intrinsic semiconductor, and a p-type semiconductor, respectively, and a nitride semiconductor such as GaN. It may include.

Next, a portion of the first semiconductor layer 103 ', the second semiconductor layer 104', and the third semiconductor layer 105 'is removed so that a portion of the first semiconductor layer 103' is exposed. When the etching process is performed, as shown in FIG. 6D, the n-type semiconductor layer 103 made of the n-type semiconductor, the active layer 104 made of the intrinsic semiconductor, and the p-type semiconductor are formed on the substrate 102. The p-type semiconductor layer 105 is formed sequentially.

In this case, as described above, the n-type semiconductor layer 103, the active layer 104, and the p-type semiconductor layer 105 may be formed of a nitride based, for example, GaN semiconductor.

Thereafter, as shown in FIG. 6E, p-electrodes 106a and n-electrodes 106b are formed on the p-type semiconductor layer 105 and the exposed n-type semiconductor layer 103, respectively.

The nitride semiconductor light emitting device according to the first embodiment of the present invention manufactured as described above removes a part of the sapphire substrate having low thermal conductivity and fills a metal having excellent thermal conductivity to improve heat dissipation characteristics, By adjusting the placement to reduce the total reflection of the light provides an effect of improving the light extraction efficiency.

In this case, the nitride semiconductor light emitting device according to the first embodiment of the present invention shows a case in which all of the inside of the groove on the rear surface of the substrate is filled with metal, for example, but the present invention is not limited thereto. A predetermined thickness may be applied to a surface to form a metal pattern having a lower portion so as to have a predetermined thickness in the groove. In addition, after removing a portion of the substrate by forming a groove on the rear surface of the substrate, a metal having excellent thermal conductivity may be inserted, and a metal layer made of the metal may be deposited on the entire rear surface of the substrate. It demonstrates in detail through an example.

7 is a cross-sectional view schematically illustrating a structure of a nitride semiconductor light emitting device according to a second embodiment of the present invention.

As shown in the drawing, the nitride semiconductor light emitting device according to the second embodiment of the present invention includes a reflective cup 201 having a space therein, a first electrode structure 209a and a first electrode structure provided on the reflective cup 201. The second electrode structure 209b, the substrate 202 attached to the inside of the reflective cup 201 through the second electrode structure 209b, the n-type semiconductor layer 203 formed on the substrate 202, and the n The active layer 204 of the active layer 204 patterned to expose a portion of the corner region of the type semiconductor layer 203, the p-type semiconductor layer 205 formed on the active layer 204, and the n-type semiconductor layer 203. And n-electrode 206b formed in the region exposed by the p-type semiconductor layer 205.

In this case, the p-electrode 206a and the n-electrode 206b may be connected to the first electrode structure 209a and the second electrode structure 209b through wires 211, respectively.

The n-type semiconductor layer 203, the active layer 204, and the p-type semiconductor layer 205 may be formed of nitride, for example, GaN semiconductor, and the substrate 202 may be formed of sapphire, zinc oxide, and silicon. Carbide, aluminum nitride, or the like.

In this case, the nitride semiconductor light emitting device according to the second embodiment of the present invention removes a portion of the substrate 202 by forming a groove having a predetermined shape on the rear surface of the substrate 202, and then includes silver, aluminum, platinum, and palladium. Inserting a metal pattern 255 made of a metal having excellent thermal conductivity, and forming a metal layer 256 made of the metal on the entire rear surface of the substrate 202 to improve heat dissipation characteristics, while By adjusting the size and placement, it is possible to improve the light extraction efficiency by reducing the total reflection of light.

In this case, as in the above-described first embodiment of the present invention, the groove, the metal pattern 255 and the metal layer 256 of the substrate 202 may be formed before the light emitting diode is formed on the substrate 202 or the substrate. It may be formed after the light emitting diode is formed at 202.

In addition, the groove and the metal pattern 255 of the substrate 202 may be formed to have regularity or may be formed to have irregularity.

Hereinafter, a manufacturing process of the nitride semiconductor light emitting device according to the second embodiment of the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

8A through 8E are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device illustrated in FIG. 7, in which a groove, a metal pattern, and a metal layer of the substrate are formed before the light emitting diode is formed on the substrate. The manufacturing process of a light emitting element is shown, for example.

As shown in FIG. 8A, a groove H having a predetermined shape is formed on the rear surface of the substrate 202 by using a laser or the like.

In this case, the substrate 202 may be formed of sapphire, zinc oxide, silicon carbide, aluminum nitride, or the like.

In addition, the groove H formed in the substrate 202 may have regularity or irregularity.

Next, as shown in FIG. 8B, the substrate 202 is formed by filling the inside of the groove H with a metal having excellent thermal conductivity such as silver, aluminum, platinum, and palladium to form a predetermined metal pattern 255. The entire back surface of the C) is deposited with the metal to form a predetermined metal layer 256.

In this case, as described above, the metal pattern 255 may be polygonal or hemispherical such as triangle or rectangle, and a general deposition method or plating method may be used.

In this case, in the case of using a metal having good reflectivity, the light leaking to the lower portion of the substrate 202 may be reflected or scattered and returned to the upper side, thereby helping to increase the luminance.

Subsequently, as shown in FIG. 8C, the first semiconductor layer 203 ′, the second semiconductor layer 204 ′, and the third semiconductor layer are formed on the substrate 202 on which the metal pattern 255 and the metal layer 256 are formed. The semiconductor layer 205 'is formed sequentially.

In this case, the first semiconductor layer 203 ', the second semiconductor layer 204', and the third semiconductor layer 205 'are made of an n-type semiconductor, an intrinsic semiconductor, and a p-type semiconductor, respectively, and a nitride semiconductor such as GaN. It may include.

Next, a portion of the first semiconductor layer 203 ', the second semiconductor layer 204', and the third semiconductor layer 205 'is removed so that a portion of the first semiconductor layer 203' is exposed. When the etching process is performed, as shown in FIG. 8D, an n-type semiconductor layer 203 made of the n-type semiconductor, an active layer 204 made of the intrinsic semiconductor, and the p-type semiconductor are formed on the substrate 202. The p-type semiconductor layer 205 is formed sequentially.

In this case, as described above, the n-type semiconductor layer 203, the active layer 204, and the p-type semiconductor layer 205 may be formed of a nitride based, for example, GaN semiconductor.

Subsequently, as shown in FIG. 8E, p-electrodes 206a and n-electrodes 206b are formed on the p-type semiconductor layer 205 and the exposed n-type semiconductor layer 203, respectively.

As described above, the nitride semiconductor light emitting device according to the first and second embodiments of the present invention shows a case in which grooves are formed in a part of the thickness of the rear surface of the substrate, for example, but the present invention is not limited thereto. By removing a portion of the substrate by forming a groove from the rear surface of the substrate to the n-type semiconductor layer, the n-electrode and the wire connection for the electrical connection between the second electrode structure on the bottom and the n-type semiconductor layer are not required. A third embodiment of the invention will be described in detail.

9 is a cross-sectional view schematically illustrating a structure of a nitride semiconductor light emitting device according to a third embodiment of the present invention.

As shown in the drawing, the nitride semiconductor light emitting device according to the third embodiment of the present invention includes a reflection cup 301 having a space therein, a first electrode structure 309a and a first electrode structure provided on the reflection cup 301. A second electrode structure 309b, a substrate 302 attached inside the reflective cup 301 through the second electrode structure 309b, an n-type semiconductor layer 303 formed on the substrate 302, and the n It consists of an active layer 304 formed on the type semiconductor layer 303, a p-type semiconductor layer 305 formed on the active layer 304, and a p-electrode 306 formed on the p-type semiconductor layer 305.

Here, the n-type semiconductor layer 303, the active layer 304 and the p-type semiconductor layer 305 may be formed of a nitride-based, for example, GaN semiconductor, the substrate 302 is sapphire, zinc oxide, silicon Carbide, aluminum nitride, or the like.

In this case, the nitride semiconductor light emitting device according to the third exemplary embodiment of the present invention forms a groove from the rear surface of the substrate 302 to the n-type semiconductor layer 303, and then has thermal conductivity such as silver, aluminum, platinum, and palladium therein. By inserting the metal pattern 355 made of this excellent metal to improve the heat dissipation characteristics, it is possible to improve the light extraction efficiency by reducing the total reflection of the light by adjusting the size and arrangement of the metal pattern 355.

In this case, as in the first and second embodiments of the present invention described above, the groove and the metal pattern 355 of the substrate 302 may be formed to have regularity or to have irregularity.

In this case, the p-electrode 306 may be connected to the first electrode structure 309a through a wire 311, and as described above, the n-type semiconductor layer 303 and the second electrode structure 309b may be Since it is electrically connected by the metal pattern 355, the n electrode and the wire connection for the connection between the two are not necessary.

Hereinafter, a manufacturing process of the nitride semiconductor light emitting device according to the third embodiment of the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

10A through 10D are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device illustrated in FIG. 9, in which a groove and a metal pattern of a substrate are formed after the light emitting diode is formed on the substrate. The manufacturing process of is shown as an example.

As shown in FIG. 10A, an n-type semiconductor layer 303, an active layer 304, and a p-type semiconductor layer 305 are sequentially formed on the substrate 302.

In this case, the substrate 302 may be formed of sapphire, zinc oxide, silicon carbide, aluminum nitride, or the like.

The n-type semiconductor layer 303, the active layer 304, and the p-type semiconductor layer 305 may be formed of an n-type semiconductor, an intrinsic semiconductor, and a p-type semiconductor, respectively, and may include a nitride semiconductor such as GaN.

Thereafter, as illustrated in FIG. 10B, a p electrode 306a is formed on the p-type semiconductor layer 305.

Next, as illustrated in FIG. 10C, a predetermined shape may be formed from a rear surface of the substrate 302 to a part of the thickness of the n-type semiconductor layer 303 by using a laser or the like on the rear surface of the substrate 302 on which the light emitting diode is formed. The groove H is formed.

In this case, the groove H formed in the substrate 302 may have regularity or irregularity.

Next, as shown in FIG. 10D, a predetermined metal pattern 355 is formed by filling the inside of the groove H with a metal having excellent thermal conductivity such as silver, aluminum, platinum, and palladium.

Subsequently, although not shown in the drawing, the entire rear surface of the substrate 302 may be deposited with the metal to form a predetermined metal layer.

In this case, as described above, the metal pattern 355 may be polygonal or hemispherical, such as triangle or rectangle, and a general deposition method or plating method may be used.

In this case, in the case of using a metal having good reflectivity, the light leaking to the lower portion of the substrate 302 may be reflected or scattered and returned to the upper side, thereby helping to increase luminance.

In this way, the nitride semiconductor light emitting device according to the third embodiment of the present invention forms a groove from the rear surface of the substrate 302 to the n-type semiconductor layer 303 and removes a part of the substrate 302 so that The n-electrode and the wire connection for the electrical connection between the two-electrode structure (not shown) and the n-type semiconductor layer 303 are eliminated.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

1 is a cross-sectional view schematically showing the structure of a general nitride semiconductor light emitting device.

2 is a cross-sectional view schematically showing the structure of a liquid crystal display according to the present invention.

3 is a cross-sectional view schematically showing the structure of the nitride semiconductor light emitting device according to the first embodiment of the present invention.

4A to 4C are views showing, for example, the cross-sectional shape of a metal pattern inserted into a groove formed in a substrate in the nitride semiconductor light emitting device shown in FIG.

5A to 5C are views showing, for example, the cross-sectional shape of a metal pattern inserted into a groove formed in a substrate in the nitride semiconductor light emitting device shown in FIG.

6A through 6E are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device shown in FIG. 3.

7 is a sectional view schematically showing the structure of a nitride semiconductor light emitting device according to the second embodiment of the present invention.

8A to 8E are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device shown in FIG. 7.

9 is a sectional view schematically showing the structure of a nitride semiconductor light emitting device according to the third embodiment of the present invention.

10A to 10D are cross-sectional views sequentially illustrating a manufacturing process of the nitride semiconductor light emitting device shown in FIG. 9.

** Description of symbols for the main parts of the drawing **

101-301: conductive reflection cup 102-302: submount substrate

103 to 303: n-type semiconductor layer 104 to 304: active layer

105 to 305: p-type semiconductor layers 106a, 206a, 306: p-electrodes

106b, 206b: n-electrodes 109a to 309a: first electrode structure

109b to 309b: second electrode structure 111 to 311: wire

155 ~ 355: Metal pattern 256: Metal layer

Claims (18)

Forming a groove having a predetermined shape on a rear surface of the substrate; Filling the inside of the groove with a metal having excellent thermal conductivity to form a predetermined metal pattern; Forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer made of a nitride semiconductor on the substrate on which the metal pattern is formed; And Forming a p-electrode and an n-electrode on the p-type semiconductor layer and the n-type semiconductor layer, respectively. Sequentially forming an n-type semiconductor layer made of a nitride semiconductor, an active layer, and a p-type semiconductor layer on the substrate; Forming a p electrode on the p-type semiconductor layer; Forming a groove having a predetermined shape from a rear surface of the substrate on which the p-electrode is formed to a part of thickness of the n-type semiconductor layer; And And forming a predetermined metal pattern by filling the inside of the groove with a metal having excellent thermal conductivity. The method of claim 1, wherein the metal comprises silver, aluminum, platinum, palladium, or the like. The method of claim 3, wherein the substrate is formed of sapphire, zinc oxide, silicon carbide, aluminum nitride, or the like. 4. The method of claim 3, wherein the groove is formed using a laser or the like. The method of manufacturing a nitride semiconductor light emitting device according to claim 3, wherein the groove is formed to have regularity or to have irregularity. The method of manufacturing a nitride semiconductor light emitting device according to claim 3, wherein the inside of the groove is filled with the metal. The method of manufacturing a nitride semiconductor light emitting device according to claim 3, wherein the metal is applied to the inner surface of the groove with a predetermined thickness so as to form a metal pattern with a lower portion to have a predetermined thickness in the groove. The method of claim 7, further comprising forming a metal layer formed of the metal on the entire back surface of the substrate on which the metal pattern is formed. A groove formed in a predetermined shape on a rear surface of the substrate; A metal pattern formed by filling the inside of the groove with a metal having excellent thermal conductivity; An n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially formed of a nitride semiconductor on the substrate; And A nitride semiconductor light emitting device comprising a p electrode and an n electrode formed on the p-type semiconductor layer and the n-type semiconductor layer, respectively. The nitride semiconductor light emitting device of claim 10, wherein the metal comprises silver, aluminum, platinum, palladium, or the like. The nitride semiconductor light emitting device of claim 10, wherein the substrate is made of sapphire, zinc oxide, silicon carbide, aluminum nitride, or the like. The nitride semiconductor light emitting device of claim 10, wherein the metal pattern completely fills the inside of the groove with the metal. The nitride semiconductor light emitting device of claim 10, wherein the metal pattern is formed to have a predetermined thickness inside the groove, and a lower portion thereof is empty. The nitride semiconductor light emitting device of claim 10, wherein the metal pattern has a polygonal or hemispherical cross-sectional shape such as a triangle or a rectangle. The nitride semiconductor light emitting device of claim 15, further comprising a metal layer formed of the metal on the entire rear surface of the substrate on which the metal pattern is formed. The nitride semiconductor light emitting device of claim 10, wherein the groove is formed to a part of a thickness of the n-type semiconductor layer on a rear surface of the substrate. A liquid crystal display panel; And An n-type semiconductor layer sequentially formed of a nitride semiconductor on the substrate to supply light to the liquid crystal display panel, a groove formed in a predetermined shape on a rear surface of the substrate, a metal pattern formed by filling a metal having excellent thermal conductivity inside the groove, And a plurality of nitride semiconductor light emitting devices each comprising an active layer, a p-type semiconductor layer, and a p electrode and an n electrode formed on the p-type semiconductor layer and the n-type semiconductor layer, respectively.

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