KR20110072249A - Wafer cleaning apparatus with improved efficiency - Google Patents

Abstract

PURPOSE: A substrate cleaning device with high cleaning efficiency is provided to shorten cleaning time by forming a line type outlet which discharges cleaning solutions with high pressure. CONSTITUTION: A gas supply unit(238) supplies high pressure gas. A cleaning solution supply unit(236) supplies cleaning solutions. A line nozzle includes a gas port which receives high pressure gas from the gas supply unit and a mixed chamber connected to a fluid port which receives the cleaning solutions from the cleaning solution supply unit. A line nozzle(231) discharges the high pressure cleaning solutions with a line type by mixing the high pressure gas with the cleaning solutions in the mixed chamber. A nozzle driver rotates or moves the line nozzle to spray the cleaning solutions on the surface of the substrate.

Description

Substrate cleaning device with improved cleaning efficiency {WAFER CLEANING APPARATUS WITH IMPROVED EFFICIENCY}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning apparatus, and more particularly, to a substrate cleaning apparatus having a nozzle mechanism capable of cleaning a substrate such as a wafer in a short time.

In general, a semiconductor device may be manufactured by repeatedly performing deposition, photography, and etching processes using a substrate, for example, a silicon wafer. Contaminants such as various particles, metal impurities, organic impurities, and the like may remain on the substrate during the processes. Since the contaminants adversely affect the yield and reliability of the semiconductor device, a cleaning process for removing contaminants remaining on the substrate is performed during semiconductor manufacturing.

The cleaning method for the cleaning process can be largely classified into a dry cleaning method and a wet cleaning method. Among them, the wet cleaning method is a cleaning method using various chemical liquids, and a batch method of simultaneously cleaning a plurality of substrates. type) It is divided into cleaning device and single wafer type cleaning device that cleans the substrate by sheet.

The batch type cleaning apparatus removes contaminants by immersing a plurality of substrates at once in a cleaning tank containing a cleaning liquid. However, the conventional batch cleaning apparatus has a disadvantage in that it is not easy to cope with the trend of larger substrate, and the use of the cleaning liquid is large. In addition, if the substrate is broken during the cleaning process in the batch type cleaning apparatus, the entire substrate in the cleaning tank is affected, which may cause a large amount of substrate defects.

For these reasons, a substrate cleaning apparatus has recently been preferred.

Substrate cleaning apparatus is a method of processing by a single substrate unit, by providing a cleaning liquid to the surface of the substrate rotated at high speed, by using a centrifugal force by the rotation of the substrate and the pressure of the spraying of the cleaning liquid spin method (spinning) cleaning is performed by the method.

In general, a substrate cleaning apparatus includes a cleaning solution recovery unit in which a substrate is accommodated, and a spin chuck rotating while the substrate is fixed, and a nozzle mechanism for supplying a cleaning solution including a chemical solution, a rinse solution, and a dry gas to the substrate. It includes.

The substrate cleaning apparatus may provide the cleaning liquid to the surface of the substrate rotating at high speed while being fixed to the spin chuck in the cleaning liquid recovery unit, and uniformly provide and clean the cleaning liquid by using the centrifugal force by the rotation of the substrate.

The existing nozzle mechanism has a form fixed to the upper part of the cleaning liquid recovery part or a form of swinging or linearly moving from the center to the outside of the substrate to the outside of the cleaning liquid recovery part. Here, the conventional substrate cleaning apparatus has a disadvantage in that it takes a long time because the cleaning process is performed in such a manner that the cleaning liquid is provided in the center of the substrate and the cleaning liquid is provided to the entire substrate by the centrifugal force of the substrate. In particular, in recent years, as the size of the substrate increases in accordance with the trend of increasing the size of the semiconductor substrate, the conventional cleaning method of providing a cleaning liquid in the center of the substrate to clean the cleaning time increases. And while the cleaning liquid is provided to the substrate, there is a problem that it is difficult to uniformly provide the cleaning liquid throughout the substrate by evaporation or other causes.

SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a substrate cleaning apparatus having a nozzle mechanism for cleaning a substrate such as a wafer in a short time and a nozzle mechanism used therefor.

In addition, according to the present invention, as the discharge port through which the high-pressure cleaning liquid is discharged is formed in the form of a line, the substrate is cleaned, unlike the conventional configuration in which the sweep time is required to discharge the cleaning liquid in the form of dots to sweep the substrate. Another object is to greatly reduce the time required to do so.

In addition, the present invention solves the problem that the interference between the nozzle and the nozzle is generated in the process of being discharged from a plurality of point-type discharge port in the prior art does not clean smoothly, and is not sprayed uniformly over a plurality of nozzles It is another object of the present invention to uniformly discharge the high pressure washing liquid.

In order to achieve the above object of the present invention, the present invention, the gas supply unit for supplying a high pressure gas; A cleaning liquid supply unit supplying the cleaning liquid; A mixing chamber communicating with a gas port for receiving a high pressure gas from the gas supply unit and a fluid port for receiving a cleaning liquid from the cleaning liquid supply unit, wherein the high pressure gas and the cleaning liquid are mixed in the mixing chamber to supply a high pressure cleaning liquid through a discharge port; A line nozzle for discharging in the form of (線); A nozzle driver which rotates or moves the line nozzle to spray the cleaning liquid onto the surface of the substrate; It provides a nozzle mechanism for substrate cleaning apparatus, characterized in that configured to include.

This is different from the nozzle mechanism for a substrate cleaning apparatus which sprays a high pressure cleaning liquid on the surface of a substrate in the form of one or a plurality of spots, thereby discharging the high pressure cleaning liquid in the form of lines on the surface of the substrate. By evenly spraying the cleaning liquid with high pressure over the area, when using a plurality of nozzles in the form of dots, the cleaning liquid spraying directions between the nozzles interfere with each other, thereby eliminating dead zones in which cleaning is not performed smoothly. In order to increase the efficiency of substrate cleaning by shortening the time required to sweep the entire substrate with a high pressure cleaning liquid.

In particular, the nozzle mechanism for cleaning substrates according to the present invention is a high-pressure cleaning liquid (more precisely, 'mixed gas' in which a high pressure gas and a cleaning liquid are mixed in a line form, unlike the conventional art, but in the present specification and claims, this is referred to as a 'high pressure cleaning liquid'). In order to inject, the mixing chamber is provided in which the high pressure gas and the cleaning liquid are uniformly mixed through the gas port.

Through this, the high pressure gas introduced into the mixing chamber through the gas port and the cleaning liquid introduced into the mixing chamber through the fluid port are mixed with each other in turbulent form inside the mixing chamber, and as the high pressure gas is filled in the mixing chamber, the line High pressure washing liquid is sprayed uniformly through the discharge port of the form. Accordingly, since the high pressure cleaning liquid in the form of a line discharged through the discharge port of the line nozzle is sprayed with a uniform amount of the cleaning liquid over the line, an advantageous effect of further improving the cleaning efficiency is obtained.

At this time, the discharge port may be formed in a straight form, or may be formed in a curved form. It is decided freely according to the form of a board | substrate, the line nozzle, or the rotation and movement of a board | substrate. Here, the discharge port is formed in a curved form includes being disposed (eg, wavy) in a plurality of curved forms. And, the discharge port is formed in a curved form includes a plurality of straight lines arranged (for example, zigzag pattern).

Here, the meaning of the description that "the discharge port is formed in the form of a line" described in the present specification and claims includes not only the discharge port being formed in one line, but also the one formed in a plurality of lines. At this time, the mixing chamber may be formed for each discharge port in the form of a line, or a plurality of discharge ports may be connected to one mixing chamber.

The gas port is in fluid communication with the mixing chamber in a direction perpendicular to each other such that the gas flow in the mixing chamber and the fluid flow in the mixing chamber form a swirling swirl, so that the high pressure gas and the washing liquid You can mix better than this.

In addition, the gas port may communicate with the fluid port in a direction facing each other. In this case, since the high pressure gas flowing into the mixing chamber and the washing liquid are introduced into the mixing chamber and meet in the mixing chamber, the efficiency of mixing between them becomes very high.

Through the gas port may use any one of compressed gas of nitrogen, oxygen, air.

In order to control the strength of the high-pressure cleaning liquid sprayed on the substrate, the gas pressure control unit for adjusting the pressure of the gas flowing through the gas port further comprises.

In order to control the concentration of the cleaning liquid of the high pressure cleaning liquid sprayed on the substrate, the cleaning liquid supply unit further comprises a cleaning liquid adjusting unit for controlling the amount of the cleaning liquid supplied to each discharge port.

In addition, the fluid port is formed in a plurality of circumference of the mixing chamber, the gas port is formed in a plurality of circumference of the mixing chamber, so that the cleaning liquid and the high-pressure gas in the mixing chamber is uniformly mixed within a short time It is good.

On the other hand, the present invention, the washing liquid recovery unit; A spin chuck provided inside the cleaning liquid recovery part to hold and rotate a substrate; A nozzle mechanism having a discharge port of the above-described line type provided outside the cleaning liquid recovery part; It provides a substrate cleaning device configured to include.

At this time, since the discharge port is formed to have a length corresponding to the radius of the substrate, when the substrate is rotated relative to the discharge hole one round, the entire surface of the substrate can be cleaned, so that the cleaning process can be performed quickly.

The discharge opening may have two or more lengths corresponding to the radius of the substrate, and when the substrate is rotated relative to the discharge hole by one turn, the entire surface of the substrate may be cleaned two or more times. Even if the substrate is rotated relative to the discharge port by less than one turn, the entire surface of the substrate can be cleaned.

As seen above, the present invention includes a gas supply unit for supplying a high pressure gas; A cleaning liquid supply unit supplying the cleaning liquid; A mixing chamber communicating with a gas port for receiving a high pressure gas from the gas supply unit and a fluid port for receiving a cleaning liquid from the cleaning liquid supply unit, wherein the high pressure gas and the cleaning liquid are mixed in the mixing chamber to supply a high pressure cleaning liquid through a discharge port; A line nozzle for discharging in the form of (線); A nozzle driver which rotates or moves the line nozzle to spray the cleaning liquid onto the surface of the substrate; Unlike the conventional nozzle mechanism for substrate cleaning apparatus which sprays a high pressure cleaning liquid to the surface of a board | substrate in the form of one or several dots, it discharges a high pressure cleaning liquid in the form of a line to the surface of a board | substrate. Since evenly spraying high pressure cleaning liquid is applied to the entire area, when using a plurality of nozzles in the form of dots, the cleaning liquid spraying directions between the nozzles interfere with each other, thereby eliminating dead zones in which cleaning is not performed smoothly. In addition, the present invention provides a nozzle mechanism and a substrate cleaning apparatus having the same, which can shorten the time required to sweep the entire substrate with a high pressure cleaning liquid to increase the efficiency of substrate cleaning.

The present invention provides a mixing chamber in which the high pressure gas and the cleaning liquid are uniformly mixed through the gas port, and the cleaning liquid introduced into the mixing chamber through the high pressure gas and the fluid port introduced into the mixing chamber through the gas port is inside the mixing chamber. As it is injected through the discharge port in a state that is uniformly mixed with each other in the turbulent form, the high-pressure cleaning liquid in the form of the line discharged through the discharge port of the line nozzle is sprayed a uniform amount of the cleaning liquid over the line, thereby improving the cleaning efficiency Advantageous effects are obtained.

In addition, according to the present invention, as the discharge port through which the high-pressure cleaning liquid is discharged is formed in the form of a line, the substrate is cleaned, unlike the conventional configuration in which the sweep time is required to discharge the cleaning liquid in the form of dots to sweep the substrate. It is possible to greatly shorten the time required, and not only the cleaning of a substrate such as a wafer can be performed in a short time, but the degree of cleaning is greatly improved as compared with the prior art.

Hereinafter, the substrate cleaning apparatus 100 and the nozzle mechanism 130 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the embodiments of the present invention, specific descriptions of well-known functions or configurations will be omitted to clarify the gist of the present invention.

1 is a cross-sectional view of a substrate cleaning apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of FIG. 1, FIG. 3A is a longitudinal sectional view of the line nozzle of FIG. 1, FIG. 3B is a sectional view along a cutting line AA of FIG. FIG. 4 is a diagram illustrating a configuration of spraying a high pressure cleaning liquid onto a circular substrate using FIG. 1.

As shown in the figure, the substrate cleaning apparatus 100 may include a cleaning chamber 110, a spin chuck 120, and a nozzle mechanism 130.

The cleaning solution recovery unit 110 accommodates the substrate 10 to provide a space in which the cleaning process is performed, and recovers the cleaning liquid scattered from the substrate 10 during the cleaning process. For example, the cleaning liquid recovery unit 110 may have a bowl shape surrounding the spin chuck 120 to effectively recover the cleaning liquid scattered from the substrate 10, and may enter and exit the substrate 10. It may have an open shape so that the top.

In the present embodiment, the substrate 10 to be cleaned may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have a variety of shapes and sizes, such as a circle and a square, and the cleaning solution recovery unit 110 according to the shape and size of the substrate 10. And the size and shape of the spin chuck 120 may also be changed. In addition, the cleaning liquid includes a chemical liquid determined according to the type of the substrate 10 and the material to be removed, and a mixed liquid in which pure water or pure water and chemical liquid are mixed in a predetermined ratio. And although not in a liquid state it may include a purge gas used in the cleaning process of the substrate 10.

The spin chuck 120 is provided to be rotated at a high speed in a state in which the substrate 10 is fixed in the cleaning liquid recovery unit 110, and the lifting and lowering movement of the spin chuck 120 allows loading and unloading of the substrate 10 to the cleaning liquid recovery unit 110. It is possible to provide, and the drive shaft 125 for the rotation and lifting movement of the spin chuck 120 is provided. In addition, the spin chuck 120 has a shape and size corresponding to that of the substrate 10, and a plurality of substrate support pins 121 on which the substrate 10 is seated and gripped are provided on the upper surface of the spin chuck 120. The substrate support pin 121 is provided to protrude a predetermined height from the upper surface of the spin chuck 120 so as to support the substrate 10 spaced apart from the surface of the spin chuck 120 by a predetermined distance, and a plurality of substrate support pins 121 to stably hold the substrate 10. Dogs may be provided at regular intervals.

The nozzle mechanism 130 is provided above the substrate 10 to inject a high pressure cleaning liquid onto the surface of the substrate 10 in a line form, and to spray a high pressure cleaning liquid over a predetermined length of the substrate 10. A discharge port 131a of the form is provided.

In more detail, the nozzle mechanism 130 includes a line nozzle 131 having a line-shaped discharge port 131a formed at a lower side thereof and a mixing chamber X provided therein, and a hinge rod for supporting the line nozzle 131. a hinge rod 133, a nozzle drive unit 135 for moving and rotating the line nozzle 131, a cleaning liquid supply unit 136 for supplying a cleaning liquid to the mixing chamber X of the line nozzle 131, and a line The gas supply part 138 supplies a high pressure gas to the mixing chamber X of the nozzle 131.

As shown in FIGS. 3A and 3B, the line nozzle 131 is provided with a mixing chamber X therein, and a plurality of fluid ports 136p and a plurality of gas ports 138p are formed in the chamber X. The cleaning liquid flows from the cleaning liquid supply unit 136 into the mixing chamber X through the fluid port 136p, and the high pressure gas such as nitrogen, oxygen, air, etc., from the high pressure gas supply unit 138 passes through the gas port 138p. Flows into the mixing chamber (X). At this time, the amount of the cleaning liquid flowing into the mixing chamber (X) is controlled by the cleaning liquid supply control valve 136a, and the amount of the cleaning liquid injected through the discharge port 131a of the line nozzle 131 is adjusted, and the mixing is performed. The high pressure gas flowing into the chamber X is controlled by the high pressure gas supply control valve 138a to regulate the inflow rate of the high pressure gas, thereby controlling the pressure of the cleaning liquid injected through the discharge port 131a of the line nozzle 131. In this case, the cleaning solution supply unit 136 and the high pressure gas supply unit 138 may be installed along the hinge rod 133, and may be connected to the line nozzle 131 so as to move together along the line nozzle 131. It can also be installed in the form of a hose.

As shown in FIG. 3A, the plurality of fluid ports 136p and the plurality of gas ports 138p are disposed at substantially right angles to each other, so that the high pressure gas and the cleaning liquid introduced through the ports 136p and 138p disposed as described above. The silver mixed chamber X is uniformly mixed with each other by bangle or vortex, and the mixed high-pressure cleaning liquid is discharged as shown in FIG. 4 at a uniform amount and pressure over the entire line through the discharge port 131a. .

The hinge rod 133 is provided with a line nozzle 131 at one end and the other end is provided at the nozzle driver 135 to position the line nozzle 131 on the substrate 10 and optionally the line nozzle 131. Is moved between the outside of the cleaning liquid recovery part 110 on the substrate 10. In addition, the hinge rod 133 is provided to extend in a predetermined length from the nozzle driver 135 provided outside the cleaning liquid recovery part 110 so that the line nozzle 131 can be positioned on the substrate 10.

The line nozzle 131 includes a line nozzle 131 having a line-shaped discharge opening 131a and having a size corresponding to the radius of the substrate 10, and the discharge opening 131a is formed by discharging the cleaning liquid into the substrate 10. The high pressure cleaning liquid is sprayed in the form of a line on the surface of the substrate 10 by being positioned from the center c to the edge e). For example, as shown in Fig. 4, it may be formed as an arc-shaped line having a predetermined radius of curvature, or may be formed as a straight line. Herein, the curvature radius and the curved direction of the line nozzle 131 may be uniformly provided with the cleaning liquid from the line nozzle 131 to the substrate 10 according to the conditions such as the rotational speed of the substrate 10 and the viscosity / temperature of the cleaning liquid. Can be determined.

Here, reference numeral 315 denotes a trajectory in which the position of the discharge port 131a is projected from the line nozzle 131. However, the present invention is not limited by the drawings, and the line shape of the discharge hole 131a may be changed in various ways.

Hereinafter, the substrate cleaning apparatus according to the second embodiment of the present invention will be described in detail.

However, in describing the second embodiment of the present invention, in order to clarify the gist of the second embodiment, the same or similar reference numerals are given to functions or configurations known by the first embodiment already described. The description will be omitted.

Although the nozzle mechanism 130 of the substrate cleaning apparatus according to the first embodiment has been described with an example in which the plurality of fluid ports 136p and the plurality of gas ports 138p are disposed at substantially right angles to each other, the second embodiment of the present invention is described. According to an embodiment, as shown in FIGS. 5A and 5B, the nozzle mechanism 230 includes a plurality of fluid ports 236p having an extended cleaning liquid supply 236 and a plurality of gases having an extended high pressure gas supply 238. The ports 238p may be formed in the mixing chamber X to face each other in a direction facing each other. Through this, the high pressure gas and the cleaning liquid flowing into the mixing chamber (X) meet each other in the mixing chamber (X) by the force introduced, so that the advantage that the efficiency of mixing the high pressure gas and the cleaning liquid becomes very high.

Hereinafter, a substrate cleaning apparatus according to a third embodiment of the present invention will be described in detail.

In describing the third embodiment of the present invention, the same or similar reference numerals are given to the functions or configurations known by the first embodiment already described in order to clarify the gist of the third embodiment. The description will be omitted.

In the above-described first embodiment, the nozzle mechanism 130 of the substrate cleaning apparatus 100 includes a discharge port 131a having a line shape, but the line nozzle 131 having a size corresponding to the radius of the substrate 10 will be described. However, the nozzle mechanism 330 of the substrate cleaning apparatus according to the third embodiment of the present invention uses the nozzle mechanism 330 provided with a discharge port 331a having a longer line shape than the line nozzle 131 of the first embodiment. There is a difference in that it is provided. For example, the size of the line nozzle 231 may be provided with a discharge port 330a having a length corresponding to the diameter of the substrate 10, as shown in Figure 6, corresponding to the diameter of the substrate 10 It is also possible for the line nozzle 331 of the size to have a form in which the two cross each other.

That is, referring to FIG. 6, the line nozzle 331 of the nozzle mechanism 330 has a line nozzle 331 having a line-shaped discharge port 331a formed in a substantially '+' shape, that is, the diameter of the substrate 10. Two line nozzles 331 corresponding to the four line nozzles 331 corresponding to the radius of the substrate 10 may have a shape that intersects at the center of the substrate 10.

One side of the line nozzle 231 is provided with a hinge rod 233 connected to the nozzle driving unit 235 provided outside the cleaning liquid recovery unit 110 to position the line nozzle 231 on the substrate 10. Accordingly, the line nozzle 331 may be moved to the outside of the substrate 10 or the cleaning liquid recovery part 110.

According to the present embodiment, the length of the line nozzle 331 is increased in this way to increase the area in which the cleaning liquid is provided on the substrate 10, thereby shortening the cleaning time effectively and the nozzle in the conventional apparatus in which the nozzle is installed at a plurality of points. The interference region between the nozzle and the nozzle may be generated to solve the problem that the cleaning solution is not uniformly provided on the surface of the substrate 10.

In this case, the discharge holes 331a may be formed in one connected to each other, or may be formed in four separated from each other in a length corresponding to the radius of the substrate 10. In addition, when the discharge port 331a in the form of a line is divided into plural, only one mixing chamber X may be formed to communicate with the plurality of divided discharge ports 331a, or the plurality of divided lines may be used. Each mixing chamber X may be provided with respect to the discharge port 331a of the shape.

However, the present invention is not limited by the drawings, and the shape and number of the line nozzles 331 may be changed in various ways. For example, the nozzle mechanism 330 may be formed in an arc shape in which each line nozzle has a predetermined radius of curvature similar to the above-described embodiment. In addition, the distance between the ejection openings may be uniformly formed, or the distance between the ejection openings may be increased or narrowed toward the edge portion of the substrate 10.

In the present invention as described above has been described by specific embodiments such as specific components and the like embodiments and drawings, but this is only provided to help a more general understanding of the present invention, the present invention is limited to the above-described embodiments Various modifications and variations can be made by those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and all the things that are equivalent to or equivalent to the scope of the claims as well as the claims to be described later belong to the scope of the present invention.

1 is a cross-sectional view of a substrate cleaning apparatus according to an embodiment of the present invention.

Figure 2 is a perspective view of Figure 1;

3A is a longitudinal cross-sectional view of the line nozzle of FIG.

FIG. 3B is a cross sectional view along cut line A-A in FIG. 3A

4 is a view showing a configuration of spraying a high pressure cleaning liquid on a circular substrate using FIG.

Fig. 5A is a longitudinal sectional view showing the shape of the line nozzle according to the second embodiment of the present invention.

FIG. 5B is a cross sectional view along cut line B-B in FIG. 5A

6 is a perspective view of a substrate cleaning apparatus according to a third embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10: substrate 100: cleaning device

110: washing liquid recovery unit 120: spin chuck

121: substrate support pin 125: drive shaft

126: spin chuck drive unit 130, 230, 330 nozzle mechanism

131, 231, 331: line nozzles 131a, 231a: discharge port

133, 333: hinge rod 135, 335: nozzle drive unit

136, 236: cleaning liquid supply part 136a, 236a: cleaning liquid supply control valve

136p, 236p: fluid ports 138, 238: gas supply

138, 238a: Gas supply control valve 138p, 238p: Gas port

315: discharge port trajectory

Claims (15)

A gas supply unit for supplying a high pressure gas; A cleaning liquid supply unit supplying the cleaning liquid; A mixing chamber communicating with a gas port for receiving a high pressure gas from the gas supply unit and a fluid port for receiving a cleaning liquid from the cleaning liquid supply unit, wherein the high pressure gas and the cleaning liquid are mixed in the mixing chamber to supply a high pressure cleaning liquid through a discharge port; A line nozzle for discharging in the form of (線); A nozzle driver which rotates or moves the line nozzle to spray the cleaning liquid onto the surface of the substrate; Nozzle mechanism for substrate cleaning apparatus comprising a. The method of claim 1, The discharge port is a nozzle mechanism for a cleaning device formed in any one of a straight form, a curved form, a combination of a straight line and a curve. The method of claim 1, And said gas port is in communication with said mixing chamber in a direction perpendicular to each other. The method of claim 1, And the gas port communicates with the mixing chamber in a direction in which the fluid ports face each other. The method of claim 1, And a compressed gas of nitrogen, oxygen, or air is introduced into the mixing chamber through the gas port. The method of claim 1, And a gas pressure control unit for adjusting a pressure of the gas flowing through the gas port. The method of claim 1, Cleaning liquid flowing through the fluid port And a cleaning liquid control unit for adjusting the amount of the cleaning liquid supplied from the cleaning liquid supply unit to each of the discharge ports. The method of claim 1, And a plurality of the fluid ports in the spaced apart positions of the mixing chamber, and the gas ports are formed in the spaced apart positions of the mixing chamber. A cleaning liquid recovery unit; A spin chuck provided inside the cleaning liquid recovery part to hold and rotate a substrate; A nozzle mechanism having a discharge port of a line type according to any one of claims 1 to 6 provided on an outer side of said cleaning liquid recovery part; Substrate cleaning device configured to include. 10. The method of claim 9, The discharge port is a substrate cleaning apparatus, characterized in that formed in a length corresponding to the radius of the substrate. 10. The method of claim 9, The discharge port is a substrate cleaning apparatus, characterized in that formed with two or more lengths corresponding to the radius of the substrate. The method of claim 11, And the two or more discharge ports are branched from the center of the substrate. The method of claim 11, Substrate cleaning apparatus, characterized in that the discharge port is formed in a plurality of lines. The method of claim 13, The plurality of line-shaped discharge port substrate cleaning apparatus, characterized in that the communication with one mixing chamber. The method of claim 13, The plurality of line-shaped discharge ports are in communication with each one of the mixing chamber, characterized in that the substrate cleaning apparatus.

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