KR20110042245A - Plating method - Google Patents

Abstract

In the plating method of the present invention, a substrate having a fine recess for wiring covered with a seed layer is prepared, and a plating solution is formed through a porous contact between the surface of the seed layer and an anode disposed at a predetermined interval from the seed layer. Supplying, applying a plating voltage between the seed layer and the anode to perform plating, wherein the state of the plating voltage applied between the seed layer and the anode is changed, and the porous contact body and the It is characterized by correlating changes in the pressurized state with the seed layer.

Description

Plating method {PLATING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method, and more particularly, to a plating method used to form a wiring by embedding a metal (wiring material) such as copper in a fine wiring pattern formed on a substrate such as a semiconductor substrate.

In recent years, fine recesses for wiring such as circuit-shaped trenches and via holes are formed on semiconductor substrates, and these fine recesses are filled with copper (wiring material) by copper plating, and the remaining copper layer (plated film) is formed. Is removed by means of CMP or the like to form a circuit. In this technique, a copper plated film is selectively precipitated in a circuit-shaped trench or via hole, and in other portions, it is preferable to reduce the amount of copper plated film to reduce the load of later CMP. Conventionally, in order to achieve such an objective, the research in plating liquids, such as the bath property of a plating liquid and the polish agent to be used, has been performed.

On the other hand, as a technique for selectively depositing a copper plated film in a circuit-like trench or the like, a method is known in which a porous body is brought into contact with a substrate such as a semiconductor wafer, and the plating is performed while moving relatively in the contact direction (for example, (Japanese Patent Laid-Open No. 2000-232078, etc.). Examples of the porous body used in this technique include squeezing PVA, porous Teflon (registered trademark), polypropylene, and the like into fibrous forms, or processing into manure paper, or amorphous materials such as gelled silicon oxide and agar. Used as

However, in order to form a copper wiring by completely embedding wiring material such as copper inside the pattern portion such as the trench, a copper layer having a considerable thickness is formed in addition to the pattern portion, and the excess copper layer formed in addition to the pattern portion is formed by the CMP method. Need to be removed. For this reason, when the amount of copper to be removed is large, the CMP time is long, which leads to an increase in cost, and when the polishing surface of the substrate after CMP has in-plane nonuniformity, the depth of wiring remaining after polishing differs in the substrate surface. As a result, the longer the polishing time, the greater the dependence on the CMP performance of wiring performance.

In order to solve such a problem, studies have been conducted in plating liquids such as bath property of a plating liquid and a gloss agent to be used, and although these have been achieved to some extent, there have been certain limitations.

On the other hand, in the method of contacting a porous body with a substrate and performing plating while moving relatively in the contact direction, the surface roughness of the porous body is generally several microns to several hundred microns, and the porous body having such surface roughness, In order to planarize the uneven surface on the semiconductor substrate whose surface roughness is submicron to several microns, there was a problem.

Moreover, this technique attempts to improve the flatness by changing the supply amount of the plating liquid in the uneven portion by relatively moving (friction) in the horizontal direction with respect to the contact surface while contacting the porous body. However, there was a problem that the effect as conceived by the surface roughness as described above was difficult to be obtained. In addition, when the surface roughness of the surface of the porous body or the porous body is pressed toward the surface to be plated of the substrate, the entire surface of the porous body is uniformly pressed against the surface to be plated of the substrate by bending or bending occurring in the porous body. As a result, as shown in FIG. 50, a gap S is locally formed between the workpiece A and the surface to be plated P of the substrate W, and a plating solution (P) is formed in the gap S. Q) exists, and there existed a problem that ions, such as Cu2 ⁺ contained in the plating liquid Q which exist in this gap S, contribute to plating and are connected by in-plane nonuniformity of plating.

In addition, the flatness can be considered to be improved by increasing the load for contacting the porous body by pressing and crushing the space part of the porous body. In this case, however, a very large load must be applied to the substrate. In the case of using a flexible insulating film as an object, the insulating film was destroyed and the surface of the plated film was easily damaged.

As a plating apparatus used for plating to form such fine and high aspect ratio wiring, the substrate is held with the surface (plated surface) upward (face up), and the cathode electrode is brought into contact with the peripheral edge of the substrate. While the substrate surface is a cathode, an anode is disposed on the substrate, and a plating voltage is applied between the substrate (cathode) and the anode while the anode is filled with a plating solution between the substrate and the anode, so that the surface of the substrate ( It is known to perform plating on the surface to be plated (for example, see Japanese Patent Application Laid-Open No. 2002-506489).

In a plating apparatus in which such a surface is held upward and the substrate is plated and plated in a single-leaf type, the distribution of the plating current is more evenly distributed over the entire surface of the substrate, thereby further improving the in-plane uniformity of the plated film. Generally, since the surface is conveyed upward and various processes are performed, the need of overturning a board | substrate at the time of plating can be eliminated.

However, in the conventional plating apparatus which holds the substrate and faces the surface up (face-up), in order to perform plating by always supplying a fresh plating solution between the substrate (cathode) and the anode, the plating process is performed with the substrate and the anode. In the meantime, it is necessary to supply a large amount of plating liquid and to perform plating, and there existed a problem that a plating liquid was wastelessly consumed.

For this reason, a small amount of fresh plating liquid is supplied by supplying the fresh plating liquid used for plating to the substrate from a position adjacent to the substrate separately from the plating liquid in which the anode is immersed and not actually used for plating. It is done to make a fresh plating liquid used for plating. However, even when the fresh plating liquid is supplied to the substrate from the position adjacent by the substrate, the old plating liquid is introduced into the fresh plating liquid by immersing the anode and deteriorated for a long time, and as a result, the plating characteristics can be maintained. There was a problem that there would be no.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a plating apparatus and a plating method in which a metal plating film such as a copper layer can be selectively precipitated inside a fine concave portion for wiring made of a circuit-shaped trench or via hole. It is a primary purpose.

It is a second object of the present invention to provide a plating apparatus and a plating method which allow plating to be performed while the entire surface of the porous body is brought into uniform contact with the surface to be plated of the substrate without increasing the load.

A third object of the present invention is to provide a plating apparatus in which a plating apparatus employing a face-up method can always be plated using a fresh plating liquid by supplying a smaller amount of plating liquid.

The plating apparatus of the present invention comprises an electrode, an electrode head having an anode, a plating liquid impregnation material for holding a plating liquid, and a porous contact body in contact with the substrate surface, a cathode electrode for contacting and energizing the substrate, and a porous contact body of the electrode head. A pressurizing mechanism for freely pressing the substrate surface, a power source for applying a plating voltage between the anode and the cathode electrode, a pressurized state of the porous contact of the electrode head against the substrate surface, the anode and the cathode And a control unit for controlling the state of the plating voltage applied between the electrodes in association with each other.

MEANS TO SOLVE THE PROBLEM The present inventors earnestly examined the method of preferentially supplying a plating liquid and depositing a metal preferentially with respect to the trench and via hole on a board | substrate. As a result, the porous contact body having high flatness and having fine through-holes enough to pass the plating liquid is brought into contact with the substrate on which the seed layer is formed, and the application of voltage for plating is carried out. By interfering with the change in the contact state between and, it has been found that metal precipitation occurs preferentially in trenches or via holes.

The present invention is based on plating with the porous contact of the electrode head and the convex portions of the seed layer provided on the substrate surface in contact. Thus, plating is performed by contacting the porous contact body with the convex portion of the seed layer, whereby an additive component (surfactant or the like) having a plating inhibitory effect contained in the plating solution is specific to the convex portion of the seed layer in contact with the porous contact material. The plating deposition is suppressed by adsorption, and plating precipitation is performed in the recessed portion of the seed layer which is not in contact with the porous contact body.

This phenomenon occurs stably when the interface is stopped while the porous contact member is in contact with the seed layer of the substrate, and the higher the flatness of the porous contact member, the higher the stability. In the case of the porous contact itself, the case of the hydrophobic material also increases the adsorption of the additive component to the seed layer.

The change in the state of the plating voltage applied between the anode and the cathode electrode and the change in the state of pressurization of the porous contact body to the substrate surface are related to each other so that the plating and the supply of a new plating solution in a short time are repeated. Since the above-mentioned suppression of plating precipitation in the convex portions of the seed layer and the phenomenon of plating precipitation in the concave portions of the seed layer are maintained, an ideal plating behavior is obtained in which the concave portions of the seed layer are preferentially plated.

The porous contact is formed of, for example, polyethylene, polypropylene, polyamide, polycarbonate, polyimide, silicon carbide or alumina.

The plating liquid impregnation material is formed of, for example, ceramics or porous plastic.

At least the surface of the porous contact that is in contact with the substrate surface is preferably formed of an insulator or a highly insulating material.

It is preferable that the said control part controls so that at least one of the said porous contact body and a board | substrate may rotate or revolve.

Another plating apparatus of the present invention includes a substrate stage for holding a substrate, a sealing material for sealing the peripheral edge portion in watertight contact with a peripheral edge portion of a plated surface of the substrate held by the substrate stage, and the substrate; A cathode portion having a cathode electrode for contacting and energizing, an electrode head freely disposed above and above the cathode portion, and having an anode and a water retaining porous body above and below, and the substrate held by the anode and the substrate stage. A plating liquid injection unit for injecting a plating liquid between the surface to be plated, a pressing separation mechanism for pressurizing the porous body at a predetermined pressure to the plated surface of the substrate held by the substrate stage and separating it from the surface to be plated; And a power source for applying a plating voltage between the cathode electrode and the anode.

According to the present invention, the porous body is pressed at an arbitrary pressure to the plated surface of the substrate held by the substrate stage, so that portions other than the fine recesses for wiring such as trenches of the porous body and the plated surface of the substrate (other than the pattern portion) The gap between the part) is made as small as possible, the plating is carried out in this state, and the plating solution between the porous body and the substrate is removed by removing the porous body from the substrate holding the porous body at the substrate stage in the middle of the process. The plating film can be selectively and efficiently deposited inside the wiring fine recesses provided in the substrate by refreshing (replacement) and plating again. Moreover, by arbitrarily adjusting the pressure which presses a porous body to the to-be-plated surface of a board | substrate, it can prevent that the to-be-plated surface of a board | substrate or the plating liquid in film-forming damage by a porous body.

It is preferable to have a relative holding mechanism for relatively moving the substrate held by the substrate stage and the electrode head.

For example, the adhesion between the porous body and the substrate can be enhanced by relatively moving both of them while pressing the surface to be plated of the substrate held by the substrate stage at an arbitrary pressure prior to plating.

The relative moving mechanism includes, for example, a rotating mechanism that rotates at least one of the substrate stage or the electrode head.

It is preferable to have a torque sensor which detects the rotational torque given when rotating at least one of the said substrate stage or the said electrode head.

Thus, by providing a torque sensor and detecting the pressure at the time of pressurizing a porous body to the to-be-plated surface of a board | substrate through a torque sensor, this pressure can be prevented from becoming excessive or insufficient.

It is preferable that the pressurizing separation mechanism has an airbag that is stretched and contracted by gas pressure to press the porous body toward the substrate.

Thereby, a porous body can be pressurized more uniformly toward a board | substrate through the airbag and over the whole surface, and can be made to contact with a uniform pressure by the front surface of a board | substrate.

The airbag is preferably configured to move the anode or the porous body in a horizontal state in contact with the anode or the porous body.

It is preferable that the said porous body has a multilayered structure which laminated | stacked at least 2 or more types of porous materials.

The porous body is composed of, for example, a plating liquid impregnating material which mainly serves to hold a plating liquid from a viewpoint of materials or structures, and a porous pad attached to the lower surface of the plating liquid impregnating material. The porous pad is, for example, a substrate. And an upper layer pad mounted directly between the lower layer pad and the plating liquid impregnating material. Thus, by making a porous body into a multilayered structure, it becomes possible to use what has flatness enough for planarizing the uneven surface on a semiconductor substrate, for example as a porous pad (lower layer pad) which contacts a board | substrate.

The electrode head preferably has a housing for accommodating the anode and the airbag therein and defining an anode chamber in which a lower end opening is closed with the porous body.

Thereby, the porous body can be independently pressed downward through the airbag housed in the anode chamber.

The anode chamber has a cylindrical shape, for example.

The housing is provided with a gas introduction tube communicating with the air bag, a plating liquid introduction tube for introducing a plating liquid into the anode chamber, and a feed port for feeding power to the anode.

The pressurizing separation mechanism preferably has an airbag for swinging the housing.

Thereby, only the housing which partitions an anode chamber can be moved relatively relatively through an airbag in the state which fixed the electrode head so that it could not move up and down.

A preferred embodiment of the present invention further has an excitation mechanism for vibrating the housing or the substrate stage in the up, down, left, and right directions.

This causes the housing or substrate stage to vibrate up, down, left, or right in a state where the porous body is not in contact with the surface to be plated of the substrate, so that the surface of the conductor layer such as a seed layer provided on the surface (coated surface) of the substrate can be It can infiltrate the plating liquid.

It is preferable to further have a temperature control mechanism for controlling the liquid temperature of the plating liquid in the anode chamber and the plating liquid between the anode and the plated surface of the substrate held by the substrate stage.

Thereby, the liquid temperature of the plating liquid in plating is always kept constant, and it can prevent that the film thickness and film quality of a metal film (plating film) change by the liquid temperature of a plating liquid.

It is preferable that the said board | substrate stage is comprised so that the back surface of the board | substrate mounted on the upper surface of the board | substrate stage may be attracted, hold | maintain a board | substrate horizontally, and pressurize the back surface side of a board | substrate with a fluid.

Thereby, by pressurizing the board | substrate hold | maintained by the board | substrate stage with the fluid from the back surface side of the board | substrate, it can hold | maintain a board | substrate more horizontally, and can adhere to the lower surface of a porous body.

The preferable aspect of this invention has the excitation mechanism which vibrates the board | substrate hold | maintained at the said board | substrate stage, or the said porous body.

Thereby, for example, prior to plating, the porous body is pressurized with an arbitrary pressure to the surface to be plated of the substrate held by the substrate stage, and at least one of the substrate or the porous body is vibrated by ultrasonic waves, an exciter, or the like. Adhesion with a board | substrate can be improved further.

Another plating apparatus of the present invention includes a substrate stage for holding a substrate, a sealing material for sealing the peripheral edge portion in watertight contact with a peripheral edge portion of a plated surface of the substrate held by the substrate stage, and the substrate. A cathode including a cathode having a cathode electrode in electrical contact with the cathode, an electrode head freely disposed above and above the cathode, and having an anode and a water-retaining porous body above and below, the substrate held by the anode and the substrate stage. A plating liquid injecting portion for injecting a plating liquid between the surface to be plated, a pressing mechanism for pressurizing the porous body at a predetermined pressure to the surface to be plated of the substrate held by the substrate stage, the cathode electrode and the anode; A power source for applying a plating voltage between the substrate and the plated surface of the substrate on which the porous body is held by the substrate stage. It has a plating liquid removal mechanism which removes the plating liquid which exists in the space | interval between the said porous body and a to-be-plated surface when pressurized by arbitrary pressure.

According to the present invention, when the porous body is pressurized to a plated surface of the substrate held by the substrate stage at an arbitrary pressure, the plating liquid existing in the gap between the porous body and the plated surface is excluded, thereby increasing the load. Plating can be performed in the state in which the whole surface of a porous body was made to adhere uniformly to the to-be-plated surface of a board | substrate.

According to a preferred embodiment of the present invention, the plating liquid removing mechanism includes at least two of the plating liquids injected between the substrate held by the substrate stage, the porous body, and the plated surface of the anode and the substrate held by the substrate stage. It consists of a mechanism for relative movement.

For example, before and after pressing the plated surface of the substrate held by the substrate stage at an arbitrary pressure, the substrate and the porous body held by the substrate stage are relatively rotated so that the porous surface and the plated surface of the substrate The plating liquid existing in the gap between the two can be removed outward by the centrifugal force accompanying this rotation.

According to a preferred aspect of the present invention, the plating liquid removing mechanism includes at least one of a plating liquid injected between a substrate held by the substrate stage, the porous body, and a plated surface of the anode and the substrate held by the substrate stage. It consists of a vibrating mechanism.

For example, by vibrating the substrate or the porous body held by the substrate stage using a vibrator, the plating liquid present in the gap between the porous body and the plated surface of the substrate can be smoothly removed.

According to a preferred aspect of the present invention, the plating liquid removing mechanism includes at least one of a plating liquid injected between a substrate held by the substrate stage, the porous body, and a plated surface of the anode and the substrate held by the substrate stage. And a mechanism for vibrating in a vertical direction with respect to the plated surface of the substrate held by the substrate stage.

Thus, by vibrating in the vertical direction with respect to the to-be-plated surface of a board | substrate, it can prevent that a plating surface is damaged by making the porous body and the to-be-plated surface of a board | substrate do not make sliding contact with each other.

The vibrating mechanism is, for example, an ultrasonic wave or an excitation device using an excitation coil. In this way, high frequency vibration can be provided by using ultrasonic waves.

The vibrating mechanism consists of a piezo vibrator, for example. Thus, by using a piezo vibrator, the mechanism can be made compact.

The vibrating mechanism may be one using pressure vibration. As such, the plating liquid can be vibrated mainly by using pressure vibration.

It is preferable that the said plating liquid removal mechanism has the anode chamber which accommodated the said anode inside, and closed the opening edge part with the said porous body, and the pressure control part which controls the pressure in the anode chamber.

This makes the pressure in the anode chamber lower than atmospheric pressure (negative pressure) to suck the plating liquid present in the gap between the porous body and the surface to be plated of the substrate, whereby the plating liquid flows into the anode chamber through the interior of the porous body. To facilitate the removal of the plating liquid from the gap.

Another plating apparatus of the present invention includes a substrate stage for holding a substrate, a sealing material for sealing the peripheral edge portion in watertight contact with a peripheral edge portion of a plated surface of the substrate held by the substrate stage, and the substrate. And a cathode part having a cathode electrode for contacting and energizing the electrode, an electrode head freely disposed above the cathode part, and having an anode and a water-retaining porous body above and below the anode and the substrate stage. A plating liquid injecting unit for injecting a plating liquid between the surface to be plated of the substrate and a power source for applying a plating voltage between the cathode electrode and the anode, wherein the porous body comprises at least two types of porous materials. It has a laminated multilayer structure.

According to the present invention, a plating solution in which an anode is immersed by holding a fresh plating solution in advance inside a porous body having a multi-layer structure and feeding the substrate through a porous body immediately before plating is mixed in the fresh plating solution supplied to the substrate. It can be prevented and plating can be always performed using a fresh plating liquid by supplying a smaller amount of plating liquid.

It is preferable that the electrode head has a housing that houses the anode therein and partitions an anode chamber in which a lower end opening is closed with the porous body.

As a result, the anode chamber is a porous body having a plating solution therein, and the bottom opening is closed. The plating solution is maintained inside the anode chamber, and the anode chamber is released, or the inside of the anode chamber is pressurized. The fresh plating liquid held inside can be kept in the anode chamber and can be supplied to the substrate while preventing mixing of the plating liquid in which the anode is immersed.

The housing is preferably provided with a plating liquid suction tube for sucking the plating liquid inside the anode chamber, a pressurized fluid introduction tube for introducing a pressurized fluid into the anode chamber, and a feed port for feeding the anode.

Thereby, while the porous body is immersed in a fresh plating solution, the plating liquid in the anode chamber is sucked to suck and remove the old plating in which the anode in the anode chamber is immersed, while the fresh plating solution is introduced into the porous body to maintain the anode. By pressurizing the inside of the chamber with a pressurized fluid, the fresh plating liquid held inside the porous body can be supplied to the substrate through the porous body.

It is preferable that at least one space is formed between the porous materials which comprise the said multilayer structure.

Thereby, for example, the fresh plating solution held in the space between the porous materials constituting the multilayer structure in advance is kept in advance, and the plating solution held inside the porous material positioned below the space is anode. It can be supplied to a board | substrate and used for plating, preventing mixing of the plating liquid which hold | maintained in the chamber and the anode was immersed.

A preferred embodiment of the present invention includes a plating liquid supply unit for discharging and supplying a plating liquid toward a space formed between the porous materials, and a plating liquid discharge unit for sucking and discharging the plating liquid in the space.

Thereby, while supplying a fresh plating liquid from a plating liquid supply part in the space formed between porous materials, the plating liquid can be removed from this space through a plating liquid discharge part, and the inside of a space can be replaced with a fresh plating liquid.

According to the plating method of the present invention, a substrate having a fine recess for wiring covered with a seed layer is prepared, and a plating solution is supplied through a porous contact between the surface of the seed layer and an anode disposed at a predetermined distance from the seed layer. In the plating by applying a plating voltage between the seed layer and the anode, the state of the plating voltage applied between the seed layer and the anode and the porous contact and the seed are changed. The change in pressure state between the layers is correlated.

In this plating method, the plating voltage applied between the seed layer and the anode is applied to the seed layer and the anode while supplying a plating solution between the seed layer on the substrate and the anode. It is characterized in that plating is performed while changing in relation to the pressurized state therebetween.

This porous contact body needs to have a fine through hole through which the plating liquid can pass. In order to prevent the plating from depositing on the porous contact itself, the contact surface with at least the seed layer of the porous contact body needs to be formed of an insulator or a highly insulating material.

In addition, in order to reliably pressurize the flat surface of the substrate (the portion in which one of the wiring trench and the via hole are formed) with the porous contact member, the porous contact member must be prevented from depositing as much as possible on the flat surface of the substrate. It is preferable that it is a substance with some degree of firmness. In addition, it is preferable that the contact surface of the porous contact member with the seed layer has good flatness so as to have a wide contact area with the seed layer surface, and the porous contact material is hydrophobic in order to sufficiently exhibit the effects of the additives described later. It is preferable.

As a change of the state of the plating voltage applied between the seed layer and the anode in the plating method of the present invention, the intermittent (applied rectangular voltage) of the plating voltage applied between the porous contact member and the seed layer, and the porous The increase and decrease of the plating voltage (repetition of high voltage and low voltage) applied between a contact body and a seed layer, etc. are mentioned. In addition, a method of applying a plating voltage between the porous contact member and the seed layer may also be applied by a simple direct current, but may be applied as a pulse group by a plurality of pulses, or may be applied as a sine wave.

Moreover, as a change of the pressurization state of a porous contact body with respect to a seed layer, the change from the contact of a seed layer and a porous contact body to a non-contact, and the pressure at the time of a contact of a seed layer and a porous contact body from a relatively high pressure Changing to a relatively low pressure.

As a form of the method of plating by correlating a change in the state of the plating voltage applied between these seed layers and the anode and a change in the pressurized state between the porous contact and the seed layer, for example, The same form can be mentioned.

In the first aspect, the change in the pressurized state between the porous contact and the seed layer is in contact with the seed layer of the porous contact and non-contact, and the change in the state of the plating voltage applied between the seed layer and the anode is And the case of intermittent application of the plating voltage.

In this embodiment, for example, plating is performed by applying a plating voltage between the seed layer and the anode when the porous contact and the seed layer are in contact, and when the porous contact and the seed layer are non-contact, the seed layer and the anode are not contacted. It is possible to supply a new plating solution between the seed layer and the porous contact without stopping the plating voltage in between.

The contact between the porous contact and the seed layer, the non-contact, and the application of the plating voltage between the seed layer and the anode may be performed in synchronization with each other, but the plating voltage is applied between the seed layer and the anode. The timing may be slightly slower than when the porous contact body is in contact with the seed layer. In this embodiment, the porous contact member or the substrate (seed layer) may be rotated or moved, for example, without a plating voltage applied between the seed layer and the anode. In particular, when the timing of application of the plating voltage is delayed, the substrate or the porous contact is rotated up, down, or while the porous contact is in contact with the seed layer, but the plating voltage is not applied between the seed layer and the anode. It is preferable because the plating liquid can be soaked into the seed layer surface by moving in the horizontal direction. Further, examples of the seeping motion of the plating liquid with respect to the surface of the seed layer include a motion of repeating contact and non-contact, a motion of repeatedly increasing and decreasing the pressure, and a motion of rotating the substrate in a lightly pressurized state.

In the second aspect, the change in the pressurized state between the porous contact and the seed layer is a change in the strength and weakness of the pressure on the seed layer of the porous contact, and the plating voltage applied between the seed layer and the anode. The case where a change is an interruption of the plating voltage to apply is mentioned.

In this embodiment, for example, when the pressure between the porous contact and the seed layer is relatively high, plating is applied by applying a plating voltage between the seed layer and the anode, and the plating is performed between the porous contact and the seed layer. When the pressure is lowered to a relatively low pressure, plating can be stopped without supplying a plating voltage between the seed layer and the anode to supply a new plating solution between the seed layer and the porous contact.

Also in this embodiment, when the application of the plating voltage is stopped, the porous contact member or the substrate can be rotated, moved or vibrated to infiltrate the seed layer with the plating liquid.

As a third aspect, the change in the pressurized state between the porous contact and the seed layer is a change in the strength of the pressure on the seed layer of the porous contact, and the plating voltage applied between the seed layer and the anode. The change is a change in the strength and weakness of the plating voltage to be applied.

In this aspect, for example, when the pressure between the porous contact and the seed layer is high, plating is performed by applying a relatively high plating voltage, and the pressure between the porous contact and the seed layer is lowered to lower the pressure. When a relatively low plating voltage is applied between the seed layer and the anode, the plating liquid consumed when the high plating voltage is applied can be supplied when the low plating voltage is applied.

In addition, in performing plating in association with a change in the state of the plating voltage applied between the seed layer and the anode, and a change in the pressurization state of the porous contact body to the seed layer, for example, the application time of the plating voltage and The interval of the stop time may be constant or may be changed. In addition, either the voltage or the current at the time of plating may be made constant, and these may be changed gradually. At the initial point of plating, plating may be performed at a constant voltage, and plating may then be performed at a constant current.

In the plating method of the present invention, prior to performing plating by relating the state of the plating voltage applied between the seed layer and the anode and the pressurized state between the porous contact member and the seed layer to each other, The seed layer of the substrate may be thinly plated with metal. For example, after plating the porous contact for a short time without contacting the seed layer, the porous contact is brought into contact with the seed layer, and the state of the plating voltage applied between the seed layer and the anode, and the porous contact and the seed. The plating may be performed in association with the pressurized state between the layers.

There is no restriction | limiting in particular as a plating liquid used for this invention, Although it may be a thing which does not contain an additive very much, It is preferable to use the plating liquid using the additive with high hydrophobicity. In particular, when an acidic copper plating solution such as a copper sulfate plating solution is used as the plating solution, it is preferable to use an additive containing a polymer component, a carrier component and a leveler component, and in particular, the polymer component and the carrier component are essential.

According to another plating method of the present invention, a substrate having a fine concave portion for wiring covered with a seed layer is prepared, a porous body having water retention property is disposed between the surface of the seed layer and an anode disposed at a predetermined interval, and the seed In conducting plating by energizing a plating solution between the layer and the anode, the plating is performed by energizing the seed layer and the anode while pressing the porous body at an arbitrary pressure. .

According to a preferred embodiment of the present invention, before the plating is performed by energizing the seed layer and the anode, the porous body and the seed layer are relatively moved while being pressed at an arbitrary pressure.

In a preferred embodiment of the present invention, energization between the seed layer and the anode is released during the process, and the porous body is separated from the seed layer.

Thereby, the plating liquid between the porous body and the seed layer can be refreshed (replaced) in the middle of the process.

According to still another aspect of the present invention, there is provided a substrate having a fine concave portion for wiring covered with a seed layer, and a porous body having water retention property is disposed between the surface of the seed layer and an anode disposed at a predetermined interval. In conducting plating by energizing a plating solution between the seed layer and the anode, the porous material may be present between the porous material and the seed layer before and after pressing the porous material at an arbitrary pressure. After the plating solution is removed, plating is conducted by energizing the seed layer and the anode.

According to a preferred embodiment of the present invention, energization is performed only when the porous body is in contact with the seed layer.

The substrate processing apparatus of the present invention includes a load and unload station for carrying in and out of a substrate, the plating apparatus according to any one of claims 1 to 33, a cleaning and drying apparatus for cleaning and drying a substrate, and the load and unload station. And a conveying apparatus for conveying a substrate between the plating apparatus and the washing and drying apparatus.

It is preferable to further have a polishing apparatus which polishes and removes and planarizes unnecessary metal films formed by the plating apparatus on the substrate surface.

It is preferable to further have a heat processing apparatus for heat-treating the board | substrate which formed the metal film in the said plating apparatus.

Thus, by performing heat treatment (annealing treatment) on the substrate before polishing and removing the unnecessary metal film by the polishing apparatus, a good effect can be exerted on the polishing removal treatment and unnecessary electrical properties of the wiring in the subsequent polishing apparatus.

It is preferable to further have the bevel etching apparatus which etches away the metal film which affixed or formed into a film at the peripheral part of a board | substrate.

Thereby, for example, the metal film formed into the bevel part of a board | substrate can be etched by the bevel etching apparatus immediately after forming the metal film for embedding on the board | substrate surface, and wash | cleaning with a washing | cleaning apparatus.

It is preferable to further have a monitor which monitors at least one of a voltage value or a current value when a plating voltage is applied between the anode and the cathode of the plating apparatus.

As a result, the end point (end point) of plating by the plating apparatus can be detected by the monitor unit, and the plating can be terminated by feeding back.

It is preferable to further have a film thickness meter which measures the film thickness of the metal film formed into a film on the board | substrate surface.

As a result, by measuring the film thickness of the metal film on the substrate surface and feeding back the measurement result and increasing or decreasing the plating time as necessary, a metal film having a predetermined film thickness can be formed with good reproducibility.

1 is a diagram showing an example of wiring formation in a semiconductor device in the order of steps;
2 is a plan view of a substrate processing apparatus having a plating apparatus of an embodiment of the present invention;
3 is a schematic view showing a main part of the plating apparatus shown in FIG. 2;
4 is a time chart according to an explanation of the operation of the electrode head in the plating apparatus shown in FIG. 3;
5 is a system diagram showing an example of a plating liquid management supply system;
6 is a vertical front view showing an example of the washing and drying apparatus shown in FIG. 2;
7 is a plan view showing an example of the washing and drying apparatus shown in FIG. 2;
8 is a schematic view showing an example of the bevel etching and back surface washing apparatus shown in FIG. 2;
9 is a vertical front view showing an example of the heat treatment apparatus shown in FIG. 2;
10 is a plan sectional view showing an example of the heat treatment apparatus shown in FIG. 2;
11 is a front view at the time of transferring a substrate of the pretreatment apparatus shown in FIG. 2;
12 is a front view at the time of chemical liquid treatment of the pretreatment apparatus shown in FIG. 2;
13 is a front view at the time of rinsing of the pretreatment apparatus shown in FIG.
14 is a cross-sectional view showing a processing head at the time of exchanging and receiving a substrate of the pretreatment apparatus shown in FIG. 2;
15 is an enlarged view of a portion A of FIG. 14 of the pretreatment apparatus shown in FIG. 2;
FIG. 16 is an equivalent of FIG. 15 at the time of fixing the substrate of the pretreatment apparatus shown in FIG.
17 is a system diagram of the pretreatment apparatus shown in FIG. 2;
18 is a cross-sectional view showing a substrate head when the substrate is exchanged with the electroless plating apparatus shown in FIG. 2;
19 is an enlarged view of a portion B of FIG. 18 of the electroless plating apparatus shown in FIG. 2;
FIG. 20 is an equivalent view of FIG. 19 showing a substrate head at the time of fixing the substrate of the electroless plating apparatus shown in FIG.
FIG. 21 is an equivalent view of FIG. 19 showing a substrate head at the time of plating treatment of the electroless plating apparatus shown in FIG.
FIG. 22 is a front view of a partial cutaway showing the plating tank when the plating tank cover of the electroless plating apparatus shown in FIG. 2 is closed;
FIG. 23 is a sectional view showing a cleaning tank of the electroless plating apparatus shown in FIG. 2;
24 is a system diagram of the electroless plating apparatus shown in FIG. 2;
25 is a schematic diagram showing an example of the polishing apparatus shown in FIG. 2;
FIG. 26 is a schematic front view of the vicinity of an inverter in the film thickness meter shown in FIG. 2;
27 is a plan view of an inverted arm portion in the film thickness meter shown in FIG. 2;
28 is a flowchart of a process in the substrate processing apparatus shown in FIG. 2;
29 is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention;
30 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
Fig. 31 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
32 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
33 is a schematic diagram showing an electrode head portion of a plating apparatus according to still another embodiment of the present invention;
FIG. 34 is a schematic view showing a plating apparatus including the electrode head shown in FIG. 33;
35 is a diagram schematically illustrating a test sample used in Examples.
36 is a graph showing the application of voltage, the contact between the substrate and the porous contact, the non-contact, and the addition of pressure in the examples;
37 is a diagram schematically illustrating a copper layer obtained in an example;
38 is a graph showing the precipitation state of plating in the present invention;
Fig. 39 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
FIG. 40 is a view according to the description when the plating solution shown in FIG. 39 is used to remove a plating solution existing in a gap generated between a porous body and a plated surface of a substrate.
Fig. 41 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
42 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
Fig. 43 is a schematic diagram showing a main part of a plating apparatus according to still another embodiment of the present invention;
FIG. 44 is a view according to an explanation when the plating solution shown in FIG. 43 is used to remove a plating liquid present in a gap formed between a porous body and a plated surface of a substrate.
45 is a plan view of a plating apparatus according to still another embodiment of the present invention;
46 is a schematic cross-sectional view showing a state when plating is performed with the plating apparatus shown in FIG. 45;
FIG. 47 is a sectional view of a shanghai-dong housing showing a plating liquid supply part and a plating liquid discharge part in the plating apparatus shown in FIG. 45;
48 is a schematic cross-sectional view showing a state in which a fresh plating solution is supplied to an anode chamber of an electrode head with the plating apparatus shown in FIG. 45;
49 is a schematic cross-sectional view showing another example of a state in which a fresh plating solution is supplied to an anode chamber of an electrode head with the plating apparatus shown in FIG. 45;
It is a figure according to description of the state in which a plating liquid exists in the clearance gap between the porous body and the to-be-plated surface of a board | substrate in a prior art example.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment shows an example in which copper as wiring material is embedded by plating in a fine concave portion for wiring provided on a surface of a substrate such as a semiconductor wafer to form a wiring made of a copper layer. It goes without saying that other wiring materials may be used.

An example of copper wiring formation in a semiconductor device will be described with reference to FIGS. 1A to 1D. As shown in FIG. 1A, an insulating film (interlayer insulating film) such as an oxide film made of SiO ₂ or a low-k re-film, for example, is formed on the conductive layer 1a on the semiconductor substrate 1 on which the semiconductor element is formed. (2) is deposited, and the via layer 3 and the trench 4 as fine concave portions for wiring are formed inside the insulating film 2 by, for example, lithography and etching techniques, and a barrier layer made of TaN or the like thereon. (5), The seed layer 6 as a feed layer of electroplating is formed again on it by sputtering etc.

As shown in FIG. 1B, copper plating is performed on the surface of the substrate W to fill copper in the via hole 3 and the trench 4 of the substrate W, and at the same time, the insulating film 2 The copper layer 7 is deposited on it. Thereafter, the barrier layer 5, the seed layer 6, and the copper layer 7 on the insulating film 2 are removed by chemical mechanical polishing (CMP) or the like, and the copper filled in the via hole 3 and the trench 4 is filled. The surface of the layer 7 and the surface of the insulating film 2 are approximately coplanar. As a result, as shown in FIG. 1C, a wiring (copper wiring) 8 including the seed layer 6 and the copper layer 7 is formed inside the insulating film 2.

Next, as shown in FIG. 1D, electroless plating is performed on the surface of the substrate W, and a protective film 9 made of Co alloy, Ni alloy, or the like is selectively applied to the surface of the wiring 8. It forms and protects the surface of the wiring 8 with the protective film 9 by this.

2 is a plan view of a substrate processing apparatus including a plating apparatus in an embodiment of the present invention. As shown in FIG. 2, this substrate processing apparatus is provided with the rectangular-shaped apparatus frame 12 freely detachable, for example by carrying the conveyance box 10 which accommodated the board | substrate, such as many semiconductor wafers, in the inside of a storage box. . Inside the device frame 12, a load-unloading station 14 is provided with a transport robot 16 that can freely move a substrate between the load-unload station 14 and the load-unload station 14. A pair of plating apparatuses 18 are disposed on both sides of the transfer robot 16 with the transfer robot 16 interposed therebetween, and the cleaning and drying apparatus 20 at one side with the transfer robot 16 interposed therebetween. , Bevel etching and back surface cleaning device 22 and film thickness meter 24 are arranged in series, and on the other side, heat treatment (annealing) device 26, pretreatment device 28, electroless plating device 30 and polishing The devices 32 are arranged in series.

Here, the device frame 12 is subjected to light shielding treatment, whereby the following steps in the device frame 12 can be performed in a light shielding state, that is, without light such as illumination light coming into the wiring. . By preventing light from reaching the wiring in this manner, for example, light can come into contact with the wiring made of copper, whereby a photoelectric potential difference can be prevented, and the wiring can be prevented from being corroded by the photoelectric potential difference.

3 shows an outline of a plating apparatus in an embodiment of the present invention. As shown in FIG. 3, the plating apparatus is provided with the rocking arm 500 rocking | swinging freely in the horizontal direction, The electrode head 502 is rotatably supported by the front end of this rocking arm 500. As shown in FIG. On the other hand, the substrate stage 504 which is located below the electrode head 502 and holds the substrate W with the surface (plated surface) upward is disposed freely in a movable manner, and above the substrate stage 504. The cathode portion 506 is disposed to surround the circumferential edge portion of the substrate stage 504. In this example, the electrode head 502 has a diameter slightly smaller than the diameter of the substrate stage 504, without changing the relative position between the electrode head 502 and the substrate stage 504. The example which made it possible to perform plating over the substantially whole surface of the surface (plating surface) of the board | substrate W hold | maintained by the substrate stage 504 is shown.

In the peripheral portion of the upper surface of the substrate stage 504, a ring-shaped vacuum suction groove 504b communicating with the vacuum passage 504a provided therein is provided, and the inside and the outside of the vacuum suction groove 504b are interposed therebetween. On both sides of the seal rings 508 and 510 are mounted. In addition, a pressing recess 504c is provided inside the sealing ring 508 located inside the upper surface of the substrate stage 504, and the pressing recess 504c is inside the substrate stage 504. It is in communication with a pressurized fluid passage 504d which extends.

Thereby, the substrate W is mounted on the upper surface of the substrate stage 504, and the inside of the vacuum suction groove 504b is vacuum sucked through the vacuum passage 504a, whereby the substrate W is adsorbed and held at its peripheral edge portion. The substrate W is further horizontally supplied by supplying a pressurized fluid such as pressurized air through the pressurized fluid passage 504d and pressurizing the substrate W to the pressure P ₅ from the back side thereof. It keeps in the state and can adhere to the lower surface of the porous body 528 as follows.

Although not shown, the substrate stage 504 has a built-in heater (heater) for controlling the temperature of the substrate stage 504 constantly. In addition, the substrate stage 504 is configured to move integrally with the cathode portion 506 at an arbitrary acceleration and speed through an unillustrated air cylinder (not shown) and through a rotating motor and a belt not shown. It is. The rotation torque at this time is detected by the torque sensor not shown. When the substrate stage 504 is raised, the sealing member 514 of the cathode portion 506 and the cathode electrode 512 abut on the peripheral edge portion of the substrate W held by the substrate stage 504. It is.

The swing arm 500 is pivoted through a shanghai motor and a ball screw made of a servomotor (not shown), and swings (swings) through a swing motor not shown. However, a pneumatic actuator may be used.

The cathode portion 506 has a cathode electrode 512 divided into six parts in this example, and an annular seal member 514 provided to cover the cathode electrode 512. The sealing member 514 is configured such that its inner circumferential edge is inclined downward toward the inside, and is gradually thinned so that the inner circumferential edge thereof sags downward.

As a result, when the substrate stage 504 rises, the cathode electrode 512 is energized by energizing the peripheral edge of the substrate W held by the substrate stage 504, and at the same time, the inner circumference of the sealing material 514. The end portion is pressed against the upper surface of the periphery of the substrate W to seal it tightly, thereby preventing the plating liquid supplied to the upper surface (plated surface) of the substrate from leaking out from the end of the substrate W, and at the same time, Contamination of the cathode electrode 512 is prevented.

In addition, in the present example, the cathode portion 506 is not movable and is integrally rotated with the substrate stage 504. However, the cathode portion 506 is free to move and the sealing member 514 is the plated surface of the substrate W when it is lowered. It may be configured to be pressed against.

The electrode head 502 has a cylindrical shape with a bottom opening all downward, and has a rotating housing 520 and a shandong housing 522 arranged concentrically. The rotating housing 520 is fixed to the lower surface of the rotating body 524 installed at the free end of the rocking arm 500 and is configured to rotate integrally with the rotating body 524. On the other hand, the shanghai-dong housing 522 is located inside the rotary housing 520 in the upper part, rotates integrally with the said rotary housing 520, and is comprised so that it may move relatively relatively. The shanghai-dong housing 522 has an anode chamber for introducing a plating solution Q for immersing the anode 526 by disposing the disk-shaped anode 526 therein by closing the lower end opening with the porous body 528 ( 530 is partitioned.

In this example, the porous body 528 has a multilayer structure in which porous materials are laminated in three layers. That is, the porous body 528 is mainly composed of a plating liquid impregnating material 532 which serves to hold the plating liquid and a porous pad 534 provided on the lower surface of the plating liquid impregnating material 532, and the porous pad 534 is provided. Is composed of a lower pad 534a in direct contact with the substrate W, and an upper pad 534b mounted between the lower pad 534a and the plating liquid impregnation material 532. The plating liquid impregnation material 532 and the upper pad 534b are located inside the shandong housing 522, and the lower opening pad 534a is used to close the lower end opening of the shandong housing 522.

Thus, by making the porous body 528 into a multilayer structure, for example, the porous pad 534 (lower layer pad 534a) in contact with the substrate has sufficient flatness to planarize the uneven surface on the plated surface of the substrate. It becomes possible to use.

The lower layer pad 534a has a high degree of flatness of the surface (surface) in contact with the surface (plated surface) of the substrate W, has a fine through hole through which the plating liquid can pass, and at least the contact surface is an insulator or It is necessary to be formed of a highly insulating material. The flatness required for the lower pad 534a is, for example, about tens of micrometers or less in the maximum roughness RMS.

Further, the fine through hole required for the lower layer pad 534a is preferably a through hole of a round hole in order to maintain flatness on the contact surface, and the hole diameter of the fine through hole, the number per unit area, and the like are plated films. Although the optimum value differs depending on the wiring pattern, the smaller one is preferable in improving the selectivity of the plating growth in the recess. As a specific hole diameter of the fine through hole and the number per unit area, for example, a micro through hole having a pore diameter of 30 µm or less, preferably 5 to 20 µm, may be present in a porosity of 50% or less.

In addition, it is preferable that the lower layer pad 534a is somewhat firm, for example, its tensile strength is 5 to 100 kg / cm 2 and the bending elastic strength is about 200 to 10000 kg / cm 2.

It is preferable that this lower layer pad 534a is a hydrophilic material, for example, the thing which polymerized the hydrophilization process or a hydrophilic group with respect to the material shown below is used. Examples of such a material include porous polyethylene (PE), porous polypropylene (PP), porous polyamide, porous polycarbonate, and porous polyimide. Among these, porous polyethylene, porous polypropylene, porous polyamide, and the like are prepared from fine powders such as PE, PP and polyamide of ultra high molecular weight as raw materials, and are pressed and hardened and sintered to form Plasas S [Mitsubishi Resin. Ltd.], midwife UF, midwife AQ (all are manufactured by Asahi Kasei Co., Ltd.), and Spacy (manufactured by Space Chemical Co., Ltd.). The porous polycarbonate is prepared by, for example, penetrating a polycarbonate film through a high energy heavy metal (copper or the like) accelerated by an accelerator, and selectively etching a linear track (track) generated thereby.

The lower layer pad 534a may be planarized by compression processing, machining, or the like in contact with the surface of the substrate W, whereby higher priority deposition in the micro grooves can be expected.

On the other hand, the plating liquid impregnating material 532 is a porous ceramics such as alumina, SiC, mullite, zirconia, titania, kojilite, or a rigid porous body such as a sintered body of polypropylene or polyethylene, or a composite thereof, or even a woven or nonwoven fabric. It is composed. For example, in alumina-based ceramics, pore diameter of 30 to 200 m, pore diameter of 30 m or less in SiC, porosity of 20 to 95%, thickness of 1 to 20 mm, preferably 5 to 20 mm, more preferably 8 The thing of about-15 mm is used. In this example, it is comprised by the porous ceramic plate made from an alumina, for example with a porosity of 30% and an average pore diameter of 100 micrometers. In addition, by containing a plating liquid therein, that is, the porous ceramic plate itself is configured to have an electrical conductivity smaller than that of the plating liquid by insulator or by allowing the plating liquid to enter the inside in a complicated manner and to follow a considerably long path in the thickness direction. have.

Thus, by placing the plating liquid impregnating material 532 in the anode chamber 530 and generating a large resistance by the plating liquid impregnating material 532, the influence of the resistance of the seed layer 6 (refer to FIG. 1 (a)). It can be negligible, and the in-plane uniformity of a plating film can be improved by making the in-plane difference of the current density by the electrical resistance of the surface of the board | substrate W small.

In the present example, three airbags are applied to the electrode head 502 by pressing the lower layer pad 534a at an arbitrary pressure on the surface (coated surface) of the substrate W held by the substrate stage 504. It is provided with a pressure separating mechanism having a. That is, in this example, the ring-shaped first airbag 540 is disposed between the lower surface of the ceiling wall of the rotary housing 520 and the upper surface of the ceiling wall of the shandong housing 522, and the shandong housing 522. A ring-shaped second airbag 542 is disposed between the lower surface of the ceiling wall of the shanghai-dong housing 522 and the upper surface of the anode 526 inside the crankcase. In addition, a bottomed cylindrical body 544 protrudes upward from the central portion of the shandong housing 522 to reach the upper side of the rotary housing 520, and the bottom surface of the ceiling wall of the bottomed cylindrical body 544 is joined. The circular third airbag 546 is disposed between the upper surface of the ceiling wall of the rotary housing 520. These airbags 540, 542, 546 are connected to a pressurized fluid supply source (not shown) via the pressurized fluid introduction pipes 550, 552, 554. These airbags 540, 542, 546 constitute a pressurized separation mechanism.

That is, in the state in which the rocking arm 500 is not fixed to the predetermined position (process position), as shown in FIG. 3, the inside of the first airbag 540 is pressure P ₁ and the second airbag 542. The lower layer pad 534a is applied to the surface (plated surface) of the substrate W held by the substrate stage 504 by pressing the inside of the substrate at a pressure P ₂ and the inside of the third airbag 546 at a pressure P ₄ , respectively. Press at any pressure. The lower pad 534a is separated from the surface of the substrate W by returning the pressures P ₁ , P ₂ , and P ₄ to atmospheric pressure. Thereby, through the first airbag 540 and the third airbag 546, the shandong copper housing 522 is pressed evenly over the entire horizontal direction thereof, and also via the second airbag 542, the anode chamber ( The anode 526 in 530 may be pressed more evenly over its entire surface to bring the lower layer pad 534a into close contact with the front surface of the substrate W held more uniformly over the entire surface of the substrate stage 504.

The shanghai-dong housing 522 is provided with a plating liquid introduction pipe 556 for introducing a plating liquid therein and a pressurized fluid introduction tube 558 for introducing a pressurized fluid, and a plurality of fine holes in the anode 526. 526a is provided. As a result, the plating liquid Q is introduced into the anode chamber 530 from the plating liquid introduction pipe 556, and pressurizes the inside of the anode chamber 530 with a pressure P ₃ to thereby form the thin hole 526a of the anode 526. Passed through to reach the upper surface of the plating liquid impregnating material 532, passed through the interior of the porous pad 534 (upper pad 534b and lower pad 534a) and held by the substrate stage 504. The upper surface of the substrate W is reached.

In addition, the inside of the anode chamber 530 also includes a gas generated by a chemical reaction, so that the pressure may change. Therefore, the pressure P ₃ in the anode chamber 530, the process is to be controlled to a predetermined value by the feedback control of the.

Here, the anode 526 is made of copper (phosphorus-containing copper) containing 0.03 to 0.05% of phosphorus in order to suppress the formation of slime in the case of performing copper plating, for example. The anode 526 may be an insoluble metal such as platinum or titanium, or an insoluble electrode in which platinum or the like is plated on a metal. The anode 526 is preferably an insoluble metal or an insoluble electrode because replacement is unnecessary. In addition, it may be a mesh shape from the ease of circulation of a plating liquid.

The cathode electrode 512 is electrically connected to the cathode of the plating power supply 560, and the anode 526 is electrically connected to the anode of the plating power supply 560, respectively. The shanghai-dong housing 522 is provided with a feed port 562 connected to the plating power supply 560 to feed the anode 526.

Next, the operation at the time of plating with this plating apparatus 18 is further demonstrated with reference to FIG.

First, the substrate stage 504 is raised while the substrate W is adsorbed and held on the upper surface of the substrate stage 504, and the peripheral edge portion of the substrate W is brought into contact with the cathode electrode 512 to enable energization. It raises again and press-contacts the sealing material 514 on the upper surface of the peripheral edge part of the board | substrate W, and seals the peripheral edge part of the board | substrate W with the sealing material 514 watertightly.

On the other hand, in the electrode head 502, it is located in a predetermined position (process position) while holding the plating liquid Q inside from a position (idling position) where idling is performed to replace the plating liquid and remove bubbles. Let's do it. That is, when the rocking arm 500 is once raised and turned again, the electrode head 502 is positioned at the position immediately above the substrate stage 504, and then lowered to reach a predetermined position (process position). Stop it. Then, the inside of the anode chamber 530 is pressurized with the pressure P ₃ to discharge the plating liquid Q held by the electrode head 502 from the lower surface of the porous pad 534.

Next, pressurized air is introduced into the airbags 540, 542, and 546, and pressurized air is also introduced into the pressurizing recess 504c of the substrate stage 504, whereby the shanghai-dong housing 522 is formed. The lower layer pad 534a is pressed downward, and the substrate held at the substrate stage 504 is also pressed from this back side, and the lower layer pad 534a is applied to the surface (coated surface) of the substrate. Pressurize with pressure. Thereby, the board | substrate W can be hold | maintained more horizontally, and the lower layer pad 534a can be pressurized with more uniform pressure on the whole surface of the board | substrate W.

In this state, the electrode head 502 and the substrate stage 504 are rotated (rotated). Thus, prior to plating, the lower layer pad 534a and the substrate W are relatively moved by pressing the lower layer pad 534a to the plated surface of the substrate W held by the substrate stage 504 at an arbitrary pressure. Improves adhesiveness with

After the rotation of the electrode head 502 and the substrate stage 504 is stopped, the cathode 512 is connected to the cathode of the plating power supply 560, and the anode 526 is connected to the anode of the plating power supply 560, respectively. Thereby, plating is performed on the to-be-plated surface of the board | substrate W. FIG. In this way, the lower layer pad 534a is pressurized to a plated surface of the substrate W held by the substrate stage 504 at an arbitrary pressure, and plating is performed in a state where the adhesion between the two is further enhanced. 534a) and the micro recesses for wiring provided on the board | substrate with the clearance gap between parts (parts other than a pattern part), such as trenches of the to-be-plated surface of the board | substrate W, as small as possible, The plating film can be selectively deposited inside.

After the plating is continued for a predetermined time, the cathode electrode 512 and the anode 526 are disconnected from the plating power supply 560, and the inside of the anode chamber 530 is returned to atmospheric pressure, and the airbag 540 is again provided. , 542 and 546 are returned to atmospheric pressure, and the lower pad 534a is removed from the substrate W. As shown in FIG. As a result, the plating liquid between the lower pad 534a and the substrate W is refreshed (replaced).

Next, a pressurized fluid is introduced into the airbags 540, 542, and 546 as described above to press the lower layer pad 534a to a substrate at a predetermined pressure, and a pressurized fluid is introduced into the anode chamber 530 again. After the electrode head 502 and the substrate stage 504 are rotated in this state and the rotation is stopped, the cathode electrode 512 and the anode 526 are connected to the plating power supply 560 to perform plating. In this manner, the lower layer pad 534a is removed from the substrate W held by the substrate stage 504 in the middle of the process to refresh (replace) the plating liquid between the lower layer pad 534a and the substrate W. By plating again, a plating film can be selectively precipitated efficiently inside the wiring fine recessed part provided in the board | substrate. Further, by arbitrarily adjusting the pressure for pressing the lower layer pad 534a to the plated surface of the substrate W, the plated surface of the substrate W or the plated film during film formation can be prevented from being damaged by the lower layer pad 534a. Can be.

The operation is repeated as many times as necessary (FIG. 4 shows a state where the operation is repeated twice). Then, the airbags 540, 542, 546, and the presser recesses for the substrate stage 504 ( 504c), and further, the anode chamber 530 is returned to atmospheric pressure, and the swing arm 500 is raised to further swing to return to the original position (idling position).

Fig. 5 shows a plating solution management supply system for managing the composition, liquid temperature, and the like of the plating solution and supplying it to the plating apparatus. As shown in FIG. 5, the plating liquid tray 600 which performs idling by immersing the electrode head 502 of the plating apparatus 18 is provided, This plating liquid tray 600 passes through the plating liquid discharge pipe 602, and the reservoir 604 is carried out. ), And the plating liquid discharged through the plating liquid discharge pipe 602 enters the reservoir 604.

The plating liquid entered into the reservoir 604 enters the plating liquid adjusting tank 608 in accordance with the driving of the pump 606. The plating liquid adjustment tank 608 is provided with a temperature controller 610 and a plating liquid analysis unit 612 for taking out and analyzing the sample liquid, and supplying a component insufficient by the analysis of the plating liquid analysis unit 612. The component supply pipe 614 is connected. The plating liquid in the plating liquid adjustment tank 608 flows along the plating liquid supply pipe 618 as the pump 616 is driven, and passes through the filter 620 to return to the plating liquid tray 600.

The composition and temperature of the plating liquid are constantly adjusted in the plating liquid adjusting tank 608 as described above, and the adjusted plating liquid is supplied to the electrode head 502 of the plating apparatus 18 and held by the electrode head 502. The plating liquid having a constant composition and temperature can be supplied to the electrode head 502 of the plating apparatus 18 at all times.

6 and 7 show an example of the cleaning / drying apparatus 20 in which the substrate W is cleaned (rinsed) and dried. In other words, the cleaning and drying apparatus 20 is a device that first performs chemical cleaning and pure water cleaning (rinse), and then completely dry the substrate W after cleaning by spindle rotation. The board | substrate stage 422 provided with the clamp mechanism 420 holding the edge part, and the board | substrate attachment / detachment lifting plate 424 which open and close this clamp mechanism 420 are provided.

The board | substrate stage 422 is connected to the upper end of the spindle 426 which rotates at high speed by the drive of a spindle rotational motor (not shown). In addition, a cleaning cup 428 is disposed around the substrate W held by the clamp mechanism 420 to prevent scattering of the processing liquid, and the cleaning cup 428 moves in accordance with the operation of a cylinder (not shown). .

Moreover, the washing | cleaning and drying apparatus 20 is a chemical liquid nozzle 430 which supplies a process liquid to the surface of the board | substrate W hold | maintained by the clamp mechanism 420, and the some which supplies pure water to the back surface of the board | substrate W. A pure water nozzle 432 and a rotatable pen-type cleaning sponge 434 disposed above the substrate W held by the clamp mechanism 420 are provided. This cleaning sponge 434 is provided at the free end of the swinging rock 436 which can rock in the horizontal direction. In addition, a clean air inlet 438 for introducing clean air into the apparatus is provided at the upper portion of the cleaning / drying apparatus 20.

In the cleaning / drying apparatus 20 having such a structure, the processing liquid is cleaned from the chemical liquid nozzle 430 while the substrate W is held by the clamp mechanism 420 and rotated, and the pivoting rock 436 is rotated. The cleaning sponge 434 is rubbed onto the surface of the substrate W while feeding toward the surface 434, and the surface of the substrate W is cleaned. Pure water is supplied from the pure water nozzle 432 to the back surface of the substrate W, and the back surface of the substrate W is also cleaned (rinsed) simultaneously with pure water injected from the pure water nozzle 432. The substrate W thus cleaned is spin-dried by rotating the spindle 426 at high speed.

An example of the bevel etching back surface cleaning apparatus 22 is shown in FIG. This bevel etching and back surface cleaning apparatus 22 performs etching and back surface cleaning of the copper layer 7 (refer FIG. 1 (b)) adhering to the edge (bevel) part of a board | substrate simultaneously, and is provided in the board | substrate surface. In order to suppress the growth of the natural oxide film of copper in one circuit forming portion, it is located inside the bottomed cylindrical waterproof cover 920 and faces the substrate W in the circumferential direction of its peripheral edge portion. A center stage disposed above the central portion on the surface side of the substrate stage 922 which is horizontally held by the spin chuck 921 at a plurality of portions and rotates at a high speed, and the substrate W held by the substrate stage 922. 924 and the edge nozzle 926 arrange | positioned above the peripheral edge part of the board | substrate W are provided. The center nozzle 924 and the edge nozzle 926 are respectively disposed downward. Moreover, the back nozzle 928 is arrange | positioned upward under the substantially center part of the back surface side of the board | substrate W. As shown in FIG. The edge nozzle 926 is configured to move freely in the radial direction and the height direction of the substrate W. As shown in FIG.

The edge nozzle 926 is capable of positioning at an arbitrary position along the central direction from the outer peripheral end surface of the substrate, and the movement width L is arbitrarily set in accordance with the size and the purpose of use of the substrate W. FIG. do. Usually, the edge cut width C is set within the range of 2 mm to 5 mm, and if the flow rate of the liquid from the back surface to the surface is higher than the rotation speed which does not matter, the copper layer in the set cut width C or the like is Can be removed

Next, the cleaning method by this bevel etching back surface cleaning apparatus 22 is demonstrated. First, the substrate W is horizontally rotated integrally with the substrate stage 922 while the substrate W is held horizontally with the substrate stage 922 via the spin chuck 921. In this state, the acid solution is supplied from the center nozzle 924 to the center portion of the substrate W surface side. As this acid solution, a non-oxidizing acid may be sufficient, for example, hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, and hydroxyl acid are used. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 926 to the peripheral edge of the substrate W. As shown in FIG. As this oxidant solution, any one of ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, or the like, or a combination thereof is used.

As a result, in the area of the edge cut width C of the periphery of the substrate W, the copper layer formed on the top and end surfaces is rapidly oxidized with an oxidant solution, and is simultaneously supplied from the center nozzle 924 to supply the entire surface of the substrate. It is etched and removed by an acid solution which is purged. In this way, by mixing the acid solution and the oxidant solution at the periphery of the substrate, a steep etching profile can be obtained as compared with supplying the mixed water from the nozzle in advance. At this time, the etching rate of copper is determined by these concentrations. In the case where a natural oxide film of copper is formed on the circuit formation portion of the substrate surface, the natural oxide is not immediately removed and grown with an acid solution that spreads over the entire surface of the substrate as the substrate rotates. In addition, after the supply of the acid solution from the center nozzle 924 is stopped, the supply of the oxidant solution from the edge nozzle 926 is stopped to oxidize the silicon exposed on the surface to suppress the adhesion of copper.

On the other hand, the oxidant solution and the silicon oxide film etch agent are simultaneously or alternately supplied from the back nozzle 928 to the center of the back surface of the substrate. Thereby, copper etc. which adhered to the back surface side of the board | substrate W in metal shape can be oxidized by the oxidizing agent solution for every silicon of a board | substrate, and can be etched and removed by the silicon oxide film etching agent. Moreover, as this oxidant solution, it is preferable to make it the same as the oxidant solution supplied to a surface in order to reduce the kind of chemical | medical agent. As the silicon oxide film etchant, hydrofluoric acid can be used, and if the acid solution on the substrate surface side also uses hydrofluoric acid, the kind of chemicals can be reduced. Thereby, a hydrophobic surface is obtained when the supply of the oxidant is stopped first, and a catcher surface (hydrophilic surface) is obtained by stopping the etchant solution first, and it can be adjusted to the back surface according to the requirements of subsequent processes.

In this way, an acid solution, that is, an etching solution, is supplied to the substrate W to remove metal ions remaining on the surface of the substrate W, and then pure water is again supplied to pure water to remove the etching solution, followed by spin drying. Is done. In this manner, removal of the copper layer in the edge cut width C of the peripheral edge portion of the substrate surface and removal of copper contamination on the back surface can be simultaneously performed, and this process can be completed within 80 seconds, for example. It is also possible to set the edge cut width of the edge to arbitrary (2 to 5 mm), but the time required for etching does not depend on the cut width.

9 and 10 show a heat treatment (annealing) device 26. The heat treatment apparatus 26 is located inside a chamber 1002 having a gate 1000 entering and exiting the substrate W, and a hot plate 1004 for heating the substrate W to, for example, 400 ° C. For example, the cool plate 1006 which cools the board | substrate W by flowing cooling water is arrange | positioned up and down. In addition, a plurality of lifting pins 1008, which extends in the vertical direction through the inside of the cool plate 1006 and mounts and holds the substrate W on the upper end, are freely provided to be elevated. In addition, a gas introduction pipe 1010 for introducing an anti-oxidation gas between the substrate W and the hot plate 1004 during annealing, and a gas introduction pipe 1010 introduced from the gas introduction pipe 1010 to provide a substrate W and a hot plate 1004. The gas exhaust pipe 1012 which exhausts the gas which flowed through () is arrange | positioned in the position which mutually opposes across the hotplate 1004.

The gas introduction pipe 1010 has N ₂ having a filter 1014a therein. N ₂ flowing through the gas introduction furnace 1016 H ₂ having gas and filter 1014b therein The H ₂ gas flowing in the gas introduction passage 1018 is mixed with the mixer 1020 and connected to the mixed gas introduction passage 1022 through which the gas mixed with the mixer 1020 flows.

As a result, the substrate W carried into the inside of the chamber 1002 through the gate 1000 is held by the lifting pin 1008, and the substrate W holding the lifting pin 1008 as the lifting pin 1008. And the distance between the hot plate 1004 becomes about 0.1-1.0 mm, for example. In this state, the substrate W is heated to a temperature of, for example, 400 ° C through the hot plate 1004, and at the same time, an anti-oxidation gas is introduced from the gas introduction pipe 1010 to provide the substrate W and the hot plate 1004. The gas is exhausted from the gas exhaust pipe 1012 by flowing through the gap. Thereby, the board | substrate W is annealed, preventing oxidation, and annealing is continued, for example for several tens of seconds-60 seconds. As for the heating temperature of a board | substrate, 100-600 degreeC is selected.

After completion of the annealing, the lifting pin 1008 is lowered until the distance between the substrate W held by the lifting pin 1008 and the cool plate 1006 is, for example, about 0 to 0.5 mm. By introducing the cooling water into the cool plate 1006 in this state, the substrate is cooled, for example, for about 10 to 60 seconds until the temperature of the substrate W becomes 100 ° C or lower, and the substrate after the completion of cooling is moved to the next step. Return.

In this example, N ₂ is an antioxidant gas. Gas and several percent H ₂ Mixed gas mixed with gas, but N ₂ Only gas may be allowed to flow.

11 to 17 show a pretreatment apparatus 28 for pretreatment of electroless plating of a substrate. This pretreatment apparatus 28 is equipped with the fixed frame 52 provided in the upper part of the frame 50, and the moving frame 54 which moves relatively with respect to this fixed frame 52, This moving frame At 54, a suspension head is supported by a processing head 60 having a cylindrical housing portion 56 with a bottom opening downward and a substrate holder 58. That is, the moving frame 54 is provided with a head rotation servo motor 62, and the housing portion of the processing head 60 is disposed at the lower end of the output shaft (intermediate shaft) 64 extending downward of the servo motor 62. 56 is connected.

As shown in FIG. 14, the vertical shaft 68 which is integrally rotated with the said output shaft 64 via the spline 66 is inserted in this output shaft 64, and is fixed to the lower end of this vertical shaft 68. The substrate holder 58 of the processing head 60 is connected via the joint 70. The substrate holder 58 is located inside the housing portion 56. Moreover, the upper end of the vertical shaft 68 is connected to the fixed ring lifting cylinder 74 fixed to the moving frame 54 via the bearing 72 and the bracket. As a result, the vertical shaft 68 swings independently of the output shaft 64 in accordance with the operation of the lifting cylinder 74.

The fixed frame 52 is provided with a linear guide 76 that extends in the vertical direction and guides the lifting and lowering of the moving frame 54. The moving frame 54 is operated by the operation of the head lifting cylinder (not shown). ) Moves up and down with the linear guide 76 as a guide.

The peripheral wall of the housing part 56 of the processing head 60 is provided with the board | substrate insertion window 56a which inserts the board | substrate W in this inside. 15 and 16, the main frame 80 made of PEEK and the guide frame 82 made of polyethylene, for example, are located below the housing portion 56 of the processing head 60. The sealing ring 84 is arrange | positioned, holding the circumferential edge part between and. This sealing ring 84 is for contacting the peripheral edge of the lower surface of the substrate W to seal the excitation.

On the other hand, the substrate holding ring 86 is fixed to the peripheral edge of the lower surface of the substrate holder 58, and is subjected to the elastic force of the spring 88 disposed inside the substrate holding ring 86 of the substrate holder 58. The cylindrical pusher 90 protrudes downward from the lower surface of the substrate holding ring 86. Further, between the upper surface of the substrate holder 58 and the upper wall portion of the housing portion 56, a cylindrical corrugated box 92 freely bent by eg Teflon (registered trademark) is sealed. It is arranged.

Thereby, the board | substrate W is inserted in the housing part 56 from the board | substrate insertion window 56a in the state which raised the board | substrate holder 58. As shown in FIG. In this case, this board | substrate W is guided to the taper surface 82a provided in the inner peripheral surface of the guide frame 82, and is positioned and mounted in the predetermined position on the upper surface of the sealing ring 84. As shown in FIG. In this state, the substrate holder 58 is lowered, and the pusher 90 of the substrate fixing ring 86 is brought into contact with the upper surface of the substrate W. As shown in FIG. By further lowering the substrate holder 58, the substrate W is pressed downward by the elastic force of the spring 88, whereby the pressure welding is performed by the sealing ring 84 at the peripheral edge of the surface (lower surface) of the substrate W. The substrate W is sandwiched and held between the housing portion 56 and the substrate holder 58 while sealing the excitation.

In addition, when the head rotation servomotor 62 is driven while the substrate W is held by the substrate holder 58 in this manner, the vertical shaft 68 inserted into the output shaft 64 and the output shaft 64 is fixed. It rotates integrally via this spline 66, by which the housing part 56 and the board | substrate holder 58 also rotate integrally.

The processing tank 100, which is located below the processing head 60, has an inner diameter slightly larger than the outer diameter of the processing head 60, and has an outer tank 100a and an inner tank 100b opened upward. ) Is provided. On the outer circumferential portion of the processing tank 100, a pair of leg portions 104 provided on the lid 102 are rotatably supported. Moreover, the crank 106 is integrally connected to the leg part 104, and the free end of this crank 106 is rotatably connected to the rod 110 of the cover body movement cylinder 108. As shown in FIG. Thereby, the cover body 102 is comprised so that the cover body 102 may move between the process position which covers the upper opening part of the process tank 100, and the side evacuation position according to operation | movement of the cover body movement cylinder 108. FIG. On the surface (upper surface) of the cover body 102, a nozzle plate 112 having a plurality of injection nozzles 112a for injecting electrolytic ion water having a reducing power toward the outside (above) is provided as follows. It is.

In addition, as shown in FIG. 17, in the inside of the inner tank 100b of the process tank 100, the some chemical | medical agent which injects the chemical | medical solution supplied from the chemical | medical solution tank 120 according to the drive of the chemical | medical agent pump 122 upwards is carried out. The nozzle plate 124 having the injection nozzle 124a is arranged in such a state that the injection nozzle 124a is more evenly distributed over the entire surface of the cross section of the inner tank 100b. A drain pipe 126 for discharging the chemical liquid (drain) to the outside is connected to the bottom surface of the inner tank 100b. In the middle of the drain pipe 126, a three-way valve 128 is mounted, and via the return pipe 130 connected to one outlet port of the three-way valve 128, the chemical liquid (drainage) is transferred to the chemical liquid tank if necessary. It returns to 120 and can reuse. In this example, the nozzle plate 112 provided on the surface (upper surface) of the lid 102 is connected to a rinse liquid supply source 132 for supplying a rinse liquid such as pure water. The drain pipe 127 is also connected to the bottom surface of the outer tank 100a.

As a result, the processing head 60 holding the substrate is lowered to cover the upper end opening of the processing tank 100 with the processing head 60 so that the inner tank 100b of the processing tank 100 is in this state. By spraying the chemical liquid toward the substrate W from the injection nozzle 124a of the nozzle plate 124 disposed therein, the chemical liquid is uniformly sprayed over the entire surface of the lower surface (processing surface) of the substrate W, The chemical liquid can be discharged from the drain pipe 126 to the outside while preventing scattering to the outside. In addition, the processing head 60 is raised to the upper surface of the lid 102 toward the substrate W held by the treatment head 60 while the upper opening of the treatment tank 100 is closed with the lid 102. By rinsing the rinse liquid from the injection nozzles 112a of the nozzle plates 112 arranged, the rinse treatment (cleaning treatment) of the remaining chemical liquid on the substrate surface is performed, and the rinse liquid is supplied to the outer tank 100a and the inner tank 100b. Since the liquid is discharged through the drain pipe 127 through the space between them, it is prevented from flowing into the inner tank 100b, and the rinse liquid is not mixed with the chemical liquid.

According to this pretreatment apparatus 28, in the state which raised the processing head 60, as shown in FIG. 11, the board | substrate W is inserted and hold | maintained in this inside, and as shown in FIG. The head 60 is lowered and positioned at a position covering the upper opening of the treatment tank 100. Then, the chemical liquid is transferred from the spray nozzle 124a of the nozzle plate 124 disposed inside the processing tank 100 while rotating the substrate W held by the processing head 60 by rotating the processing head 60. By spraying toward (W), the chemical liquid is uniformly sprayed over the entire surface of the substrate (W). Moreover, the process head 60 is raised and stopped at a predetermined position, and as shown in FIG. 13, the cover body 102 which was in the evacuation position is moved to the position which covers the upper opening part of the process tank 100. Moreover, as shown in FIG. In this state, the rinse liquid is injected from the injection nozzle 112a of the nozzle plate 112 disposed on the upper surface of the lid body 102 toward the substrate W rotated while being held by the processing head 60. Thereby, the process by the chemical liquid of the board | substrate W and the rinse process by the rinse liquid can be performed, without making two liquids mix.

Further, by adjusting the lowering position of the processing head 60 and adjusting the distance between the substrate W held by the processing head 60 and the nozzle plate 124, the spray nozzle 124a of the nozzle plate 124 is adjusted. The area | region and injection pressure which the injected chemical | medical solution contacts the board | substrate W can be adjusted arbitrarily. Here, when circulating and using a pretreatment liquid such as a chemical solution, the active ingredient is reduced along with the treatment, and at the same time, the pretreatment liquid (chemical liquid) is leaked by adhering to the substrate. It is preferable to juxtapose a liquid management unit (not shown). Specifically, the chemical liquid used for the cleansing is mainly acid or alkali, so for example, the pH is measured to supply the decrease from the difference from the predetermined value, and the decrease is supplied by the liquid level meter installed in the chemical storage tank. can do. For the catalyst solution, for example, in the case of an acidic palladium solution, the amount of acid can be measured by pH and the amount of palladium by titration or turbidity, and the amount of reduction can be supplied in the same manner as described above. .

18 to 24 show an electroless plating apparatus 30. This electroless plating apparatus 30 is for forming the protective film 9 shown in FIG. 1 (d). The plating tank 200 (see FIGS. 22 and 24) and the plating tank 200 It has a board | substrate head 204 arrange | positioned above and holding the board | substrate W detachably.

As shown in detail in FIG. 18, the substrate head 204 has a housing portion 230 and a head portion 232, and the head portion 232 surrounds the suction head 234 and the suction head 234. It consists mainly of the board | substrate receiving 236 which surrounds. The substrate rotating motor 238 and the substrate receiving driving cylinder 240 are housed in the housing 230, and an upper end of the output shaft (intermediate shaft) 242 of the substrate rotating motor 238 is rotated. In the joint 244, the lower end is connected to the suction head 234 of the head portion 232, and the rod of the substrate receiving driving cylinder 240 is connected to the substrate receiving portion 236 of the head portion 232. . In addition, a stopper 246 is provided inside the housing 230 to mechanically restrict the rise of the substrate support 236.

Here, the same spline structure is employed between the adsorption head 234 and the substrate support 236, and the substrate support 236 is relative to the adsorption head 234 according to the operation of the substrate support driving cylinder 240. However, when the output shaft 242 is rotated by the drive of the substrate rotation motor 238, the suction head 234 and the substrate support 236 rotates integrally as the output shaft 242 rotates. It is.

19 to 21, an adsorption ring 250 for adsorbing and holding the substrate W with the lower surface as the seal surface is provided at the peripheral edge of the lower surface of the adsorption head 234 via the pressure ring 251. And a concave portion 250a provided continuously in the circumferential direction on the lower surface of the suction ring 250 and a vacuum line 252 extending in the suction head 234 to communicate with the suction ring 250. It communicates with each other via the hole 250b. As a result, the inside of the concave portion 250a is evacuated to suck and hold the substrate W. The vacuum is exhausted in a circumferential shape in such a small width (diameter direction) to hold the substrate W. By suppressing the influence (curvature etc.) to the board | substrate W to the minimum and immersing the adsorption ring 250 in the plating liquid (processing liquid), plating liquid is performed not only on the surface (lower surface) of the board | substrate W but also on the edge. It is possible to immerse in. Release of the substrate W is performed by supplying N ₂ to the vacuum line 252.

On the other hand, the substrate support 236 is formed in a cylindrical shape with a bottom opening downward, the peripheral wall is provided with a substrate insertion window 236a for inserting the substrate (W) inwards, the bottom protruding inward A disk-shaped pole portion 254 is provided. Moreover, the projection piece 256 which has the taper surface 256a which guides the board | substrate W in an inner peripheral surface is provided in the upper part of this pole part 254.

Thereby, as shown in FIG. 19, the board | substrate W is inserted in the board | substrate base 236 from the board | substrate insertion window 236a in the state which lowered the board | substrate case 236. As shown in FIG. In this case, this board | substrate W is guided and positioned in the tapered surface 256a of the projection piece 256, and is mounted and hold | maintained in the predetermined position of the upper surface of the pole part 254. In this state, the substrate support 236 is lifted up, and as shown in FIG. 20, the upper surface of the substrate W mounted and held on the pole portion 254 of the substrate support 236 holds the adsorption ring of the adsorption head 234 ( 250). Next, the substrate W is sealed while the peripheral edge of the upper surface of the substrate W is sealed on the lower surface of the suction ring 250 by evacuating the recess 250a of the suction ring 250 through the vacuum line 252. Keep adsorption. When the plating process is performed, as shown in FIG. 21, the substrate support 236 is lowered by several mm, the substrate W is removed from the pole portion 254, and the adsorption and holding is performed only by the adsorption ring 250. Thereby, the peripheral part of the surface (lower surface) of the board | substrate W can be prevented from becoming plated by the presence of the pole part 254.

22 shows the details of the plating tank 200. This plating tank 200 is connected to the plating liquid supply pipe 308 (refer FIG. 24) in the bottom part, and the plating liquid collection groove 260 is provided in the peripheral wall part. In the plating tank 200, two rectifying plates 262 and 264 for stabilizing the flow of the plating liquid flowing upwards are arranged, and the plating liquid introduced into the plating tank 200 at the bottom thereof. The temperature measuring device 266 which measures the liquid temperature of is provided. In addition, it is located slightly above the liquid level of the plating liquid held by the plating tank 200 on the outer circumferential surface of the circumferential wall of the plating tank 200, and the pH inside the plating tank 200 is slightly obliquely upward in the radial direction. The stopper which consists of 6-7.5 neutral liquids, for example, the injection nozzle 268 which injects pure water is provided. Thus, after the plating is completed, the substrate W held by the head portion 232 is pulled up slightly above the liquid level of the plating liquid and stopped once. Liquid) is sprayed to immediately cool the substrate W, whereby plating can be prevented from proceeding with the plating liquid remaining on the substrate W.

In addition, when the plating process such as idling is not performed at the upper end of the plating tank 200, the upper end of the plating tank 200 is closed to prevent unnecessary evaporation of the plating liquid from the plating tank 200. The plating tank cover 270 is provided to open and close freely.

As shown in FIG. 24, the plating tank 200 extends from the plating liquid storage tank 302 at the bottom thereof, and the plating liquid supply pipe 308 provided with the plating liquid supply pump 304 and the three-way valve 306 on the way. Is connected to. Thus, during the plating process, the plating liquid is supplied into the plating tank 200 from the bottom portion, and the excess plating liquid is recovered from the plating liquid recovery groove 260 to the plating liquid storage tank 302 so that the plating liquid can be circulated. It is. Further, a plating liquid return pipe 312 which returns to the plating liquid storage tank 302 is connected to one outlet port of the three-way valve 306. As a result, the plating liquid can be circulated even during the waiting for plating, whereby the plating liquid circulation system is configured. As such, the plating liquid in the plating liquid storage tank 302 is always circulated through the plating liquid circulation system, thereby reducing the decrease in the concentration of the plating liquid compared to the case where the plating liquid is simply stored, thereby increasing the processable number of the substrates W. You can.

In particular, in this example, by controlling the plating liquid supply pump 304, it is possible to individually set the flow rate of the plating liquid circulating at the time of the plating standby and the plating process. That is, the circulation flow rate of the plating liquid at the time of a plating waiting is 2-20 L / min, for example, and the circulation flow rate of the plating liquid at the time of a plating process is set, for example at 0-10 L / min. As a result, a large circulating flow rate of the plating liquid is ensured during plating standby to maintain a constant liquid temperature of the plating bath in the cell, and a circulating flow rate of the plating liquid is reduced during the plating process to form a more uniform film protective film (plating film). can do.

The temperature measuring device 266 installed near the bottom of the plating tank 200 measures the liquid temperature of the plating liquid introduced into the plating tank 200, and based on this measurement result, the heater 316 and the flow meter 318 described below. ).

In other words, in this example, water is heated using a heater 316 provided separately, and the water passed through the flow meter 318 is used for the heat medium, and the heat exchanger 320 is installed in the plating liquid in the plating liquid storage tank 302 to form the plating liquid. Heating device 322 for indirectly heating the liquid, and a stirring pump 324 for circulating and stirring the plating liquid in the plating liquid storage tank 302 is provided. In electroless plating, the plating solution may be used at a high temperature (about 80 ° C.), and this is to cope with this. According to this method, it is unnecessary to the plating solution which is much more delicate than the inline heating method. This mixing can be prevented.

23 shows the details of the cleaning tank 202 attached to the side of the plating tank 200. At the bottom of the cleaning tank 202, a plurality of spray nozzles 280 for spraying a rinse liquid such as pure water upwards are provided on the nozzle plate 282, and the nozzle plate 282 is disposed above and below the nozzle. It is connected to the upper end of the shaft 284. In addition, the nozzle upper and lower shafts 284 are moved by changing the screwing positions of the nozzles 287 for adjusting the nozzle position and the nuts 288 for screwing the screws 287 and thereby the spray nozzles 280. And the distance between the substrate W disposed above the injection nozzle 280 can be adjusted accordingly.

In addition, it is located above the injection nozzle 280 on the outer circumferential surface of the circumferential wall of the cleaning tank 202, and sprays a cleaning liquid such as pure water into the cleaning tank 202 downwards at an obliquely downward direction in the radial direction. At least a portion of the head portion 232 of the head portion 232 which contacts the plating liquid is provided with a head cleaning nozzle 286 for flushing the cleaning liquid.

In the cleaning tank 202, the substrate W held by the head portion 232 of the substrate head 204 is disposed at a predetermined position in the cleaning tank 202, and the pure water or the like is injected from the spray nozzle 280. The cleaning liquid (rinse liquid) is sprayed to clean (rinse) the substrate W. At this time, the cleaning liquid, such as pure water, is simultaneously sprayed from the head cleaning nozzle 286 to provide the head portion 232 of the substrate head 204. By washing at least a part of the liquid contacting the plating liquid with the cleaning liquid, it is possible to prevent the accumulation of precipitates in the portion immersed in the plating liquid.

In this electroless plating apparatus 30, the substrate W is sucked and held by the head portion 232 of the substrate head 204 as described above at the position where the substrate head 204 is raised, and at the same time, the plating tank. The plating liquid 200 is circulated.

In the plating process, the plating tank cover 270 of the plating tank 200 is opened to rotate the substrate head 204 while lowering the substrate head 204 to hold the substrate W held by the head portion 232. Is dipped in a plating solution in

Subsequently, after the substrate W is immersed in the plating liquid for a predetermined time, the substrate head 204 is raised to pull the substrate W out of the plating liquid in the plating tank 200, and as necessary, the substrate W is removed. Pure water (stopping liquid) is injected from the spray nozzle 268 to cool the substrate W immediately, and the substrate head 204 is raised again to pull the substrate W up to the upper position of the plating tank 200. The rotation of the head 204 is stopped.

Next, the substrate head 204 is moved to the position immediately above the cleaning tank 202 while the substrate W is held by the head portion 232 of the substrate head 204. The substrate head 204 is rotated and lowered to a predetermined position in the cleaning tank 202, and the cleaning liquid (rinse liquid) such as pure water is sprayed from the spray nozzle 280 to clean (rinse) the substrate W. At the same time, a cleaning liquid such as pure water is sprayed from the head cleaning nozzle 286 to clean at least a portion of the head portion 232 of the substrate head 204 in contact with the plating liquid with the cleaning liquid.

After the cleaning of the substrate W is completed, the rotation of the substrate head 204 is stopped, the substrate head 204 is raised to raise the substrate W to the upper position of the cleaning tank 202, and then the substrate The head 204 is moved to the transfer position with the transfer robot 16, and the board | substrate W is exchanged with this transfer robot 16, and it transfers to the next process.

As shown in FIG. 24, the electroless plating apparatus 30 measures the liquid amount of the plating liquid held by the electroless plating apparatus 30, and is, for example, absorbance photometric method, titration method, electrochemical measurement, or the like. The plating liquid management unit 330 which analyzes the composition of a plating liquid and replenishes the components which are lacking in the plating liquid is provided. The analysis results are then signal-processed to supply the insufficient components in the plating liquid to the plating liquid storage tank 302 using a metering pump or the like from a supply tank (not shown) to manage the liquid amount and composition of the plating liquid. Thin film plating can be realized with high reproducibility.

The plating liquid management unit 330 has a dissolved oxygen concentration meter 332 which measures the dissolved oxygen of the plating liquid held by the electroless plating apparatus 30 by, for example, an electrochemical method or the like, and the dissolved oxygen concentration meter 332 ), The dissolved oxygen concentration in the plating liquid can be managed constantly by, for example, degassing, nitrogen inhalation or the like. In this manner, by constantly controlling the dissolved oxygen concentration in the plating liquid, the plating reaction can be realized with good reproducibility.

When the plating solution is used repeatedly, certain specific components may accumulate due to inflow from the outside or its own decomposition, leading to reproducibility of plating and deterioration of film quality. By adding a mechanism for selectively removing such a specific component, the life of the liquid can be extended and the reproducibility can be improved.

25 shows an example of the polishing apparatus (CMP apparatus) 32. The polishing apparatus 32 has a polishing table 822 which attaches a polishing cloth (polishing pad) 820 to the upper surface to form a polishing surface, and the substrate W facing the polishing surface toward the polishing table 822. A top ring 824 is provided. The substrate W is fixed by the top ring 824 while rotating the polishing table 822 and the top ring 824, respectively, and supplying the grindstone liquid from the grinding liquid nozzle 826 provided above the polishing table 822. The surface of the substrate W is polished by pressing the polishing cloth 820 of the polishing table 822 with pressure. As the polishing pad, one that employs a fixed whetstone particle method in which whetstone particles are put in advance may be used.

If the polishing operation is continued using such a CMP apparatus, the polishing force of the polishing surface of the polishing cloth 820 is lowered, but in order to restore the polishing force, a dresser 828 is provided and the dresser 828 is polished. The polishing (dressing) of the polishing cloth 820 is performed at the time of exchanging the substrate W to be used. In this dressing process, the dressing surface (dressing member) of the dresser 328 is rotated while pressing them to the polishing cloth 820 of the polishing table 822 to remove the grindstone liquid and cutting debris attached to the polishing surface, The polishing surface is planarized and sharpened to reproduce the polishing surface. Further, a monitor for monitoring the surface state of the substrate may be provided on the polishing table 822 to detect the end point (end point) of polishing therein (in-situ), and finish the substrate therein (in-situ). You may install a monitor that checks the condition.

26 and 27 show a film thickness meter 24 provided with an inverter. As shown to FIG. 26 and FIG. 27, this film thickness measuring device 24 is equipped with the inverter 339, and this inverter 339 is equipped with the inversion arms 353 and 353. As shown in FIG. These inversion arms 353 and 353 hold | maintain the outer periphery of the board | substrate W in the left and right both sides, and have a function which inverts this by rotating 180 degrees. A circular mounting table 355 is provided directly under the inverting arms 353 and 353 (inverting stage), and a plurality of film thickness sensors S are provided on the mounting table 355. The mounting table 355 is freely constructed by the drive mechanism 357.

At the time of inversion of the substrate W, the mounting table 355 stands by at the position of the solid line under the substrate W, and ascends to the position indicated by the dotted line before or after the inversion, thereby turning the film thickness sensor S into the inversion arm. The film thickness is measured by approaching the substrate W held by (353, 353).

According to this example, since there are no restrictions, such as an arm of a carrier robot, the film thickness sensor S can be provided in the arbitrary position on the mounting base 355. FIG. In addition, since the mounting table 355 has a vertical configuration, the distance between the substrate W and the sensor can be adjusted at the time of measurement. It is also possible to provide a plurality of types of sensors in accordance with the detection purpose, and to change the distance between the substrate W and each sensor for each measurement of each sensor. However, since the mounting table 355 moves east and west, it takes a little time for measurement.

Here, as the film thickness sensor S, for example, an overcurrent sensor is used. The overcurrent sensor generates an eddy current and measures the film thickness by detecting the frequency or loss of the current returned by conducting the substrate W, and is used in a noncontact manner. Moreover, as a film thickness sensor S, an optical sensor is also suitable. An optical sensor can directly measure the film thickness from the information of the light reflected by irradiating the sample with light, and can measure not only the metal film but also the film thickness of insulating films, such as an oxide film. The installation position of the film thickness sensor S is not limited to what is shown in figure, Arbitrary number is provided in the place to measure.

Next, a series of processes for forming copper wiring on the substrate W on which the seed layer 6 shown in FIG. 1A is formed by the substrate processing apparatus configured as described above will be further described with reference to FIG. 28. .

First, the board | substrate W in which the seed layer 6 was formed in the surface is taken out from the conveyance box 10 one by one, and is carried in to the load unloading station 14. And the board | substrate W carried in this loading / unloading station 14 is conveyed by the transfer robot 16 to the film thickness measuring device 24, and the initial film thickness (seed layer 6) by this film thickness measuring device 24. Film thickness] is measured. Then, if necessary, the substrate is inverted and conveyed to the plating apparatus 18. The plating apparatus 18 deposits the copper layer 7 on the surface of the substrate W as shown in Fig. 1B. Copper is embedded.

And the board | substrate which formed this copper layer 7 is conveyed to the washing | cleaning and drying apparatus 20 with the transfer robot 16, and it wash | cleans with the pure water of the board | substrate W, and dries, or the plating apparatus 18 is carried out. In the case where the spin drying function is provided, the spin drying (liquid drop) of the substrate W is performed by the plating apparatus 18, and the substrate after the drying is conveyed to the bevel etching and the back surface cleaning apparatus 22.

In this bevel etching and back surface cleaning apparatus 22, the unnecessary copper adhering to the bevel (edge) part of the board | substrate W is etched away, the back surface of a board | substrate is wash | cleaned with pure water, etc., and a conveyance robot ( 16), the substrate is conveyed to the washing and drying apparatus 20, and the substrate W is washed with pure water to spin-dry, or when the bevel etching and back washing apparatus 22 is equipped with a spin drying function, This bevel etching and back surface spin drying of the board | substrate W is performed by the washing | cleaning apparatus 22, and the board | substrate after this drying is conveyed to the heat processing apparatus 26 by the transfer robot 16. As shown in FIG.

In this heat treatment apparatus 26, heat treatment (annealing) of the substrate W is performed. And the board | substrate W after this heat processing is conveyed to the film thickness measuring device 24 with the transfer robot 16, and here, the film thickness of copper is measured and the difference between this measurement result and the measurement result of the initial film thickness mentioned above. The film thickness of the copper layer 7 (refer FIG. 1 (b)) is obtained from Further film formation of copper by plating is performed. And the board | substrate W after this film thickness measurement is conveyed to the grinding | polishing apparatus 32 by the conveyance robot 16. As shown in FIG.

In this polishing apparatus 32, as shown in Fig. 1C, the unnecessary copper layer 7 and the seed layer 6 deposited on the surface of the substrate W are polished off to remove the surface of the substrate W. Flatten. At this time, for example, when the film thickness and the finish of the substrate are inspected by the monitor and the end point (end point) is detected by the monitor, polishing is finished. The substrate W after the polishing is conveyed to the cleaning and drying apparatus 20 by the transfer robot 16, and the substrate surface is washed with the chemical liquid by the cleaning and drying apparatus 20, and then washed (rinsed) with pure water again. Then, it is spin-dried at high speed. And the board | substrate W after this spin drying is conveyed to the preprocessing apparatus 28 with the transfer robot 16. As shown in FIG.

In this pretreatment apparatus 28, plating pretreatment is performed on at least one of, for example, adhesion of the Pd catalyst to the substrate surface, removal of an oxide film adhered to the exposed surface of the substrate, and the like. Then, the substrate after the plating pretreatment is transferred to the cleaning and drying apparatus 20 by the transfer robot 16 as described above, and the substrate W is washed with pure water to spin-dry or the pretreatment apparatus 28 ) Is equipped with a spin drying function, spin drying (liquid dripping) of the substrate W in this pretreatment apparatus 28, and transfers the substrate after the drying to the electroless plating apparatus 30 by the transfer robot 16. Return to).

In this electroless plating apparatus 30, as shown in FIG. 1D, the surface of the exposed wiring 8 is subjected to, for example, electroless CoWP plating and exposed to the outside of the wiring 8. A protective film (plated film) 9 made of a CoWP alloy film is selectively formed on the wiring 8 to protect the wiring 8. The film thickness of this protective film 9 is 0.1-500 nm, Preferably it is 1-200 nm, More preferably, it is about 10-100 nm. At this time, for example, when the film thickness of the protective film 9 is monitored and the film thickness reaches a predetermined value, that is, when the end point (end point) is detected, the electroless plating is terminated.

Then, the substrate on which the electroless plating is completed is conveyed to the cleaning and drying apparatus 20 by the transfer robot 16, and the surface of the substrate is cleaned with the chemical liquid by the cleaning and drying apparatus 20, and then washed with pure water (rinse). Then, it is spin-dried at high speed. And the board | substrate W after this spin drying is returned to the conveyance box 10 by the conveyance robot 16 via the load and unload station 14.

Fig. 29 shows a plating apparatus of another embodiment of the present invention. The plating apparatus of the embodiment shown in FIG. 29 differs from the plating apparatus shown in FIG. 3 as the substrate stage 504 by using a substrate mounting surface 504e flattened on the surface thereof. The substrate W is brought into direct contact with the surface of the surface 504e so as to be mounted and held. The other structure is the same as that shown in FIG.

30 shows a plating apparatus according to still another embodiment of the present invention. The plating apparatus of this embodiment differs from the plating apparatus shown in FIG. 3 by forming a recess 504f on its surface as the substrate stage 504, and bonding the backing film 564 into the recess 504f. The board | substrate W was made to abut on the surface of this backing film 564 using what was used, and it was the point of mounting holding. The other structure is the same as that shown in FIG.

Fig. 31 shows a plating apparatus according to still another embodiment of the present invention. The plating apparatus of the embodiment shown in FIG. 31 differs from the plating apparatus shown in FIG. 30 in that the electrode head 502 has a diameter smaller than that of the substrate stage 504. . In this example, since the diameter of the electrode head 502 is smaller than the diameter of the substrate stage 504, when the plating is performed while the electrode head 502 and the substrate stage 504 are fixed, the substrate stage 504 Plating cannot be carried out over the entire surface of the substrate W held by). Therefore, in this example, when the cathode electrode 512 and the anode 526 are connected to the plating power source 560 to perform plating, the electrode head 502 is rocked via the swinging arm 500, and at the same time, the electrode head 502 ) Or at least one of the substrate stage 504 is rotated. The other structure is the same as that shown in FIG.

32 shows a plating apparatus according to still another embodiment of the present invention. The plating apparatus of this embodiment differs from the plating apparatus of the embodiment shown in FIG. 29 by being free to rotate at the free end of the rocking arm 500 and moving up and down independently of the rocking arm 500. The drive body 580 which functions as a mechanism is provided. The drive member 580 and the up-and-down moving housing 522 in which the anode 526 is housed therein, the lower opening is closed by the porous body 528, and the anode chamber 530 is partitioned, are moved up and down. It connects to the ball bearing 584 via the support body 582 arrange | positioned in the housing 522, and concentrates a load to one point via this ball bearing 584 according to the vertical movement of the drive body 580 ( 522 is pressurized.

In this example, the flange 580a is provided in the drive body 580, and the flange 582a which serves as a stopper is provided in the support body 582, respectively. In addition, a stopper pin 588 protruding downward in a state in which elastic force is applied to the flange 580a of the driving body 580 by the compression coil spring 586 is provided, and a lower end of the stopper pin 588 is supported by a support 582. By elastically abutting against the flange (stopper) 582a, the support body 582 and the vertical movement housing 522 are held horizontally. The other structure is the same as that shown in FIG.

In addition, although the said example shows the example which used copper as a wiring material, you may use copper alloy, silver, silver alloy, etc. other than this copper. This is the same also in the following example.

According to the present invention, the flatness of the surface after plating can be improved by first plating the inside of the trench or via hole to fill the wiring material (metal film). This reduces or eliminates the load on the selective etching process of the convex portion such as CMP, and can solve not only the cost but also problems specific to CMP such as dishing and oxide erosion.

33 and 34 show an outline of main parts of a plating apparatus according to still another embodiment of the present invention. This plating apparatus is provided with the electrode head 701 which accommodated the porous contact body 702, the plating liquid impregnation material 703, and the anode 704 in the anode chamber 706 in the housing 707, and this electrode head ( 701 is installed on main shaft 710 via support member 711 and airbag 709. The lower end of the housing 707 is provided with a sealing ring 708 and a cathode electrode 712. In this figure, the board | substrate W which provided the seed layer 6 in the surface is described.

The electrode head 701 is configured by providing the anode 704, the plating liquid impregnation material 703, and the porous contact body 702 in the housing 707 in this order.

The porous contact body 702 provided at the lowermost part of the electrode head 701 has a structure substantially the same as that of the lower layer pad 534a of the porous pad 534 in the above-described examples, and the description thereof is omitted here. .

Further, the porous contact 702 may be changed in thickness so as to gradually become thicker, for example, from the center to the outside, and the pore diameter of the fine through hole of the porous contact 702 may be, for example, from the center. It may be changed so as to gradually decrease toward the outside. These can be implemented by, for example, gradually decreasing the particle diameter of the powder raw material from the center toward the outside. In addition, the hole diameter itself of the minute through hole of the porous contact body 702 may gradually decrease from the anode 704 side toward the substrate W side. This can be done by, for example, gradually decreasing the particle diameter of the powder raw material toward the surface in contact with the substrate.

The relatively hard porous body and the relatively flexible porous body may be superimposed on the porous contact body 702, or the porous contact body 702 may be convex downward.

On the other hand, the plating liquid impregnating material 703 has the effect of holding the plating liquid Q and sending it between the surface of the porous contact body 702 and the seed layer 6 of the substrate W. Since it has substantially the same structure as the plating liquid impregnation material 532 in this description, the description is abbreviate | omitted here.

The anode 704 may be a metal to be plated, but may be an insoluble metal such as platinum or titanium, or an insoluble electrode in which platinum or the like is plated on a metal.

As for the anode 704, it is preferable that the upper part is immersed in plating liquid Q, and it is preferable that the space part is provided in the upper part. The space portion collects gases such as oxygen gas generated when an insoluble electrode is used, and simultaneously introduces air or the like through a valve (not shown) from the outside, thereby increasing the pressure of the entire electrode head 701, and It is also possible to control the amount of the plating liquid flowing out from the micro through hole of the porous contact body 702 by the plating liquid own weight.

The electrode head 701 is provided on the main shaft 710 by a supporting member 711 having some elasticity. An air bag 709 is provided between the electrode head 701 and the main shaft 710. By increasing and decreasing the air in this airbag 709, the whole electrode head 701 moves up and down, and the pressure with respect to the seed layer 6 of the board | substrate W can be increased and decreased.

The seal ring 708 provided on the bottom circumference of the housing 707 is formed of a material having elasticity and liquid leaking property, for example, rubber or plastic, to seal the plating solution from the side of the porous contact 702 at the time of plating. Prevent leakage. In addition, even when the porous contact 702 and the seed layer 6 of the substrate W are brought into non-contact, the sealing ring 708 does not fall from the seed layer 6 of the substrate W to prevent leakage of the plating liquid. It is good also as a structure to make. A cathode electrode 712 is provided outside the sealing ring 708 in contact with the seed layer 6 of the substrate W.

In FIG. 33, a gap is provided between the porous contact body 702 and the plating liquid impregnation material 703 so that the plating liquid Q is present in the gap, but a soft sponge or the like may be provided in this gap. good. In addition, the porous contact body 702 and the plating liquid impregnating material 703 may be in direct contact without providing a gap. In the latter case, when uniformity of the overall length is required by the shape of the plating liquid impregnating material 703, the shape of the porous contact body 702 may be formed so as to conform to the shape of the plating liquid impregnating material 703. The electrode head 701 is installed on the main shaft 710 by the supporting member 711, and the airbag 709 is mounted between the electrode head 701 and the main shaft 710, but the main shaft 710 is provided. The electrode head 701 may be directly installed on the main shaft 710 so that the entire main shaft 710 may be moved by an actuator or the like.

34 shows the overall configuration of a plating apparatus. The plating apparatus includes an integrated controller 721, an applied voltage controller 722, a plating power source 723, a motion controller 724, a pressure pump 725, an actuator 726, and a substrate stage 730.

This plating apparatus is an electroplating apparatus employing a so-called face up method, and the substrate W is mounted on the substrate stage 730 with its surface upward. In plating, the electrode head 701 is lowered with respect to the substrate W having this surface upward, and the surface of the porous contact body 702 is in contact with the seed layer 6 of the substrate W. As shown in FIG. The cathode electrode 712 is in contact with the seed layer 6 on the surface of the substrate W to enable energization. In this example, the substrate is held with the surface up (face up). However, the substrate may be held with the surface down (face down), or the substrate may be held vertically.

On the other hand, the plating liquid Q in the electrode head 701 is filled in the plating liquid impregnation material 703 and the porous contact body 702 among the thin holes provided in the inside of the anode 704, and the board | substrate W It is supplied to the upper surface (surface) of the seed layer 6 of. The timing at which the plating liquid is supplied may be before or after the porous contact body 702 and the seed layer 6 are in contact with each other. However, in consideration of air removal, supply from just before contact is preferable.

In this state, when a plating voltage is applied between the anode 704 and the seed layer 6 on the substrate W to flow a current, plating (for example, copper plating) is performed on the surface of the seed layer 6. . The plating liquid impregnating material 703 and the porous contact 702 are then interposed between the anode 704 and the seed layer 6 of the substrate W, and the porous contact 702 is convex of the substrate W. Since the parts are in contact with the portions, metal is preferentially precipitated inside the fine concave portions of the substrate W to which the plating liquid is easily supplied, so that the trenches and the like are preferentially filled.

In addition, in the case of using an additive containing a component which adsorbs an additive, particularly a convex portion having a high current density and suppresses plating precipitation of the portion, the additive acts on portions other than the fine concave portion of the substrate which becomes the convex portion, Preferred plating precipitation inside the fine recess is further increased.

When a certain amount of plating is performed, the application voltage of the plating voltage is changed by the applied voltage controller 722 based on the information from the integrated controller 721, and the actuator 726 is operated by the motion controller 724. Or the pressure pump 725 is moved in association with the change in the applied state of the plating voltage so that the pressurized state of the substrate W and the electrode head 701 is changed.

For example, when the component in the plating liquid is reduced, the application of the plating voltage is stopped by the applied voltage control unit 722, and simultaneously with the seed layer 6 and the electrode on the substrate W by the motion control unit 724. By moving the position of the porous contact body 702 of the head 701, the plating liquid is newly supplied, and plating is performed even where plating conditions are insufficient, thereby obtaining a homogeneous plating film.

As described above, the change of the applied state of the voltage by the integrated control unit 721, the applied voltage control unit 722 and the motion control unit 724, and the change of the pressing state of the seed layer 6 of the porous contact 702 After the plating for a predetermined time while correlated with each other, the electrode head 701 is raised to separate the porous contact 702 and the plated surface of the substrate W. As shown in FIG.

At this time, although the metal precipitate may remain in the empty hole of the porous contact 702, this can be easily removed by immersing the surface of the porous contact 702 in an etching tank (not shown) prepared separately.

According to the present invention, since plating can be preferentially performed in fine recesses such as trenches, the amount of plating liquid consumed is minimized, and the amount of the plating liquid used can be reduced even if a plating tank is formed in a volume surrounded by the substrate and the porous contact. It can greatly reduce. In addition, since the replenishment of the plating liquid into the fine recesses is promoted, for example, by the movement movement or the pressing movement during the plating stop, it is also effective in suppressing the generation of voids and the like.

As described above, the present invention can be advantageously used particularly in a damascene process in which plating is performed by embedding a metal such as copper on a substrate.

The present invention will be described in more detail with reference to the following Examples, but the present invention is not at all limited by these Examples.

Example

A conventional method for a substrate W having a narrow trench (1 μm deep; 0.18 μm wide) 4a and a wide trench (100 μm wide) 4b wider than this as shown in FIG. 35. The barrier metal treatment was carried out accordingly. Subsequently, an 80 nm thick seed layer 6 was formed by sputtering to obtain a test sample.

This test sample was plated using an acidic copper plating solution having the composition shown in Table 1 using a plating apparatus having an electrode head (copper containing anode having a hole in the anode 704) 701 having the configuration shown in FIG. It was done. The plating conditions are shown in Fig. 36, but as the energization pattern, the seed layer 6 and the porous contact member 702 started plating at a plating voltage of 1 V in the first non-contact state, and the energization was stopped after 10 seconds. Thereafter, the seed layer 6 and the porous contact body 702 were brought into contact with each other, soaking motion (small vertical movement) was performed for 1 second, and then a plating voltage was applied for 5 seconds. Subsequently, the seed layer 6 and the porous contact body 702 were brought into a non-contact state at the same time as the application of the plating voltage was stopped. Further, after the substrate W was rotated in this non-contact state, the seed layer 6 was brought into contact with the porous contact body 702 and a voltage was applied for 5 seconds. After such application of the plating voltage, the contact between the seed layer 6 and the porous contact body 702, and the non-contact state were performed for 8 minutes, the plating was finished. Also the pressure in the anode chamber (706) therebetween (P ₆₎ and the pressure (P ₇₎ in the airbag (709) was adjusted as shown in Figure 36.

By this plating, the steel layer 7 shown in the schematic diagram of FIG. 37 was obtained.

(Acid copper plating bath composition)

Copper sulfate (as pentahydrate) 225 g / L

Sulfuric acid 55 g / L

Chlorine 60 ppm

Polyethylene glycol (MW Ca. 10000) 500 mg / L

Bis (3-sulfopropyl) disulfide (SPS) 20 mg / L

Janus green 1 mg / L

As is apparent from FIG. 37, according to the present invention, plating precipitation occurs preferentially in the fine concave portions such as narrow trenches 4a and wide trenches 4b, and plating precipitation on the convex portions is suppressed. The copper can be completely embedded in the fine concave portions such as the narrow trench 4a and the wide trench 4b without making the entire copper layer 7 thick.

This mechanism can be shown in FIG. That is, in the first step, the metal surface of the concave portion is the height of a ₁ , whereas the metal surface of the convex portion is the height of a ₂ as seen from the height of the concave portion. As a result of the present invention, plating deposition preferentially occurs in the concave portions, and plating precipitation in the convex portions is suppressed. As a result, the plating speed in the concave portions is represented by h, whereas the plating speed in the convex portions becomes H. . As a result of this speed difference, when the heights of the convex portions and the concave portions are the same (h _l ), the plating speed is not different, and plating is performed at the same speed.

Fig. 39 shows an outline of a plating apparatus according to still another embodiment of the present invention. The difference from the plating apparatus shown in FIG. 29 mentioned above of this plating apparatus shown in FIG. 39 is as follows.

That is, the electrode head 502 consists of an air bag 548 in this example, which presses the lower layer pad 534a at an arbitrary pressure on the surface (plating surface) of the substrate W held by the substrate stage 504. Pressing mechanism is provided. That is, in this example, a ring-shaped airbag (pressure mechanism) 548 is disposed between the lower surface of the ceiling wall of the rotary housing 520 and the upper surface of the ceiling wall of the shanghai-dong housing 522. 548 is connected to a pressurized fluid supply source (not shown) via a pressurized fluid introduction pipe 549.

As a result, the inside of the airbag 548 is pressurized to a pressure P ₈ in a state in which the rocking arm 500 is fixed to a predetermined position (process switch) so as not to move, thereby maintaining the substrate W held by the substrate stage 504. The lower layer pad 534a can be pressurized more uniformly to a surface (coated surface) at an arbitrary pressure, and the pressure of the lower layer pad 534a can be released by returning the pressure P ₈ to atmospheric pressure.

The cathode electrode 512 is electrically connected to the cathode of the plating power supply 560, and the anode 526 is electrically connected to the anode of the plating power supply 560, respectively.

Next, the operation at the time of plating with this plating apparatus will be described. First, the substrate stage 504 is raised while the substrate W is adsorbed and held on the upper surface of the substrate stage 504, and the peripheral edge portion of the substrate W is brought into contact with the cathode electrode 512 to enable energization. The sealing member 514 is pressed against the upper surface of the peripheral edge portion of the substrate W to seal the peripheral edge portion of the substrate W in a watertight manner.

On the other hand, in the electrode head 502, it is located at a predetermined position (process switch) in a state where the plating liquid Q is kept inside from the position (idling position) where idling is performed to replace the plating liquid and remove bubbles. Let's do it. That is, when the rocking arm 500 is once raised and rotated, the electrode head 502 is positioned directly above the substrate stage 504, and then lowered to reach a predetermined position (process switch). Stop it. The inside of the anode chamber 530 is pressed to discharge the plating liquid Q held by the electrode head 502 from the lower surface of the porous pad 534. Next, pressurized air is introduced into the airbag 548 to press the lower pad 534a downward.

In this state, the electrode head 502 and the substrate stage 504 are rotated (rotated), respectively. Thus, when the surface roughness of the surface of the porous body 528 (lower layer pad 534a) or the porous body 528 (lower layer pad 534a) is pressed toward the surface to be plated of the substrate W, the porous body ( 528 (the lower pad 534a), as shown in FIG. 40, due to bending, bending, or the like, between the porous body 528 (lower pad 534a) and the plated surface P of the substrate W. As shown in FIG. Even if a gap S is formed locally in the gap S and the plating liquid Q is present in the gap S, the plating liquid Q present in the gap S is removed outward by the centrifugal force due to this rotation. By removing the plating liquid Q in this manner, the entire surface of the porous body 528 (lower layer pad 534a) can be uniformly pressed against and adhered to the plated surface S of the substrate W.

In this example, the lower layer pad 534a is pushed downward, and then the electrode head 502 and the substrate stage 504 are rotated, respectively. However, the lower layer pad is introduced by introducing pressurized air into the air bag 548. When pressing 534a downward, the electrode head 502 and the substrate stage 504 may be rotated in advance, and the rotation may continue for a predetermined time even after pressing.

Then, the plating liquid Q present in the gap S locally generated between the porous body 528 (lower layer pad 534a) and the surface to be plated P of the substrate W is excluded, thereby removing the porous body. (528) After the electrode head 502 and the substrate stage 504 are rotated for a time sufficient to uniformly press the entire surface of the lower layer pad 534a to the surface to be plated S of the substrate W to be in close contact. , Stop this rotation.

Next, the cathode electrode 512 is connected to the cathode of the plating power supply 560, and the anode 526 is connected to the anode of the plating power supply 560, thereby plating the plated surface of the substrate W. . Thus, the lower layer pad 534a is pressurized by the arbitrary pressure to the to-be-plated surface of the board | substrate W hold | maintained by the board | substrate stage 504, and plating is performed in the state which raised both adhesiveness. And a gap between the parts other than the wiring micro recesses (parts other than the pattern portion) such as trenches on the surface to be plated of the substrate W are removed, and a plating film is provided inside the wiring micro recesses provided on the substrate. It can be precipitated selectively.

After the plating is continued for a predetermined period of time, the cathode electrode 512 and the anode 526 are disconnected from the plating power supply 560, and the inside of the anode chamber 530 is returned to atmospheric pressure, and the airbag 548 is returned. The pressure is returned to the atmospheric pressure to release the pressure on the substrate W of the lower pad 534a. And the electrode head 502 is raised.

The above operation was repeated as many times as necessary to form a film of copper layer 7 (see FIG. 1B) having a sufficient film thickness on the surface (plated surface) of the substrate W to fill the fine recesses for wiring. Thereafter, the electrode head 502 is rotated to return to its original position (idling position).

Fig. 41 shows a main part of a plating apparatus according to still another embodiment of the present invention. The difference from the example shown in FIG. 39 of this example is that this piezoelectric vibrator (for example) is provided in the board | substrate W which provided the piezoelectric vibrator 590 in the board | substrate mounting part of the upper surface of the board | substrate stage 504, and mounted in the board | substrate stage 504. 590 is used to apply vertical and vertical vibration to the surface to be plated of the substrate W. As shown in FIG.

In this example, as described above, the lower layer pad 534a is pressed against the substrate W held by the substrate stage 504, and then the substrate W is vibrated up and down for a predetermined time via the piezoelectric vibrator 590. Alternatively, the substrate W is vibrated up and down via the piezoelectric vibrator 590 in advance, and the vibration is continued for a predetermined time even after the lower pad 534a is pressed. As described above, a gap S is locally formed between the porous body 528 (lower layer pad 534a) and the plated surface P of the substrate W, and the plating solution Q is formed in the gap S. Even if it exists, the plating liquid Q which exists in this clearance gap S can be excluded outside according to this vibration. In particular, by vibrating the substrate W in the vertical direction with respect to the surface to be plated as in this example, it is possible to prevent the plating surface from being damaged by preventing the porous body and the surface to be plated from sliding between each other. In addition, by using the piezoelectric vibrator 590 as the vibrator, the mechanism can be made compact.

42 shows the main part of a plating apparatus according to still another embodiment of the present invention. The difference from the example shown in FIG. 39 of this example is that the storage tank 504g for holding a liquid such as pure water is formed on the upper surface of the substrate stage 504, and inside the storage tank 504g. And an ultrasonic oscillator 592 which gives ultrasonic waves to the liquid in the storage tank 504g and vibrates the liquid at high frequency.

In this example, a liquid such as pure water is filled in the storage tank 504g of the substrate stage 504, and the substrate W is adsorbed and held on the upper surface of the substrate stage 504 in the same manner as described above. At this time, the substrate W held by the substrate stage 504 and the liquid in the storage tank 504g of the substrate stage 504 are brought into contact with each other. After pressing the lower layer pad 534a toward the substrate W held by the substrate stage 504, ultrasonic vibration is applied to the liquid in the storage tank 504g of the substrate stage 504 via the ultrasonic oscillator 592. . Then, ultrasonic vibration of the liquid is transmitted to the substrate W to vibrate the substrate, and again from the plating liquid Q to the porous body 528 to vibrate them. Thereby, similarly to the above, the plating liquid Q which exists in the clearance gap S which arises locally between the porous body 528 (lower layer pad 534a) and the to-be-plated surface P of the board | substrate W is removed. This vibration can be excluded from the outside.

Similarly to the above, when pressing the lower layer pad 534a, the ultrasonic vibration may be applied to the liquid in the storage tank 504g of the substrate stage 504 in advance via the ultrasonic oscillator 592.

43 shows the main part of a plating apparatus according to still another embodiment of the present invention. The difference from the example shown in FIG. 39 of this example is that the pressure port 594 is provided in the apex wall of the shanghai-dong housing 522 which forms the anode chamber 530, and this pressure port 594 is a switching valve. A vacuum pump 598 serving as a pressure control unit is connected via 596.

According to this example, the porous body is driven by driving the vacuum pump 598 to evacuate the inside of the anode chamber 530 and setting the pressure in the anode chamber 530 to a pressure lower than atmospheric pressure (negative pressure). (528) 534a and the plating liquid Q which exist in the clearance gap S between the to-be-plated surface P of the board | substrate W are attracted, and plating liquid Q is made into the porous body 528 (534a). The plating liquid Q may be excluded from the gap S by promoting the flow into the anode chamber 530 through the interior of the gap.

In addition, the suction removal operation of this plating liquid is performed in advance when pressurizing the lower layer pad 534a toward the board | substrate W hold | maintained by the board | substrate stage 504 similarly to each said example, or when pressurizing, or plating You may continue to perform in the middle.

In addition, although the example shown in FIG. 43 has shown the example which connected the vacuum pump 598 to the pressure port 594 via the opening-closing valve 596, the pressure pump was connected instead of this vacuum pump 598, and again the upper and lower sides were connected. A plating liquid Q in the anode chamber 530 is provided by using an exhaust port provided in the movable housing and repeating the pressure in the anode chamber 530 by the pressurizing pump and reducing the pressure by the exhaust gas from the exhaust port. Further, the porous body 528 may be vibrated.

As described in detail above, according to the present invention, when the porous body is pressurized to a plated surface of the substrate held by the substrate stage at an arbitrary pressure, the plating solution existing in the gap between the porous body and the plated surface is removed. The plating can be performed in a state where the entire surface of the porous body is brought into uniform contact with the plated surface of the substrate without increasing the load. In this way, the inside of the trench or via hole is preferentially plated to fill the wiring material (metal film), thereby improving the flatness of the surface after plating. Therefore, by reducing or eliminating the load of the selective etching process of the convex portion such as CMP, not only can the cost be reduced, but also the problems specific to CMP such as dishing and oxide erosion can be solved.

46 to 49 show a plating apparatus according to still another embodiment of the present invention. The difference from this plating apparatus and the plating apparatus shown in FIG. 29 is as follows.

That is, as shown in FIG. 46, this plating apparatus is provided with the plating process part 630 which performs a plating process and its subsidiary process, and the idling stage 632 is arrange | positioned adjacent to this plating process part 630. As shown in FIG. In addition, an electrode arm 636 having an electrode head 502 which is held at the front end of the rocking arm 500 oscillating about the rotating shaft 634 and moves between the plating treatment part 630 and the idling stage 632 is provided. It is. In addition, a precoating / recovery arm 638, which is located next to the plating treatment unit 630, and a fixed nozzle 640 for spraying chemicals such as pure water and ionized water, gas, and the like toward the substrate, are disposed. In this embodiment, three fixed nozzles 640 are provided, and one of them is used for supply of pure water.

46, the porous body 528 arrange | positioned in the anode chamber 530 has a multilayer structure which laminated | stacked porous material in three layers, and provided the space between each layer. That is, the porous body 528 is composed of a plating liquid impregnating material 532, a porous pad 534 consisting of a lower pad 534a and an upper pad 534b, and the lower pad 534a and the upper pad 534b. The 1st space 642a is provided in between, and the 2nd space 642b is provided between the upper pad 534b and the plating liquid impregnation material 532, respectively.

The first space 642a is provided between the lower pad 534a and the upper pad 534b, and is mainly fresh in the interior of the first space 642a or in the lower pad 534a positioned below it. The plating solution is supplied and held in advance, and the fresh plating solution is supplied to the substrate W via the lower pad 534a immediately before plating, so that plating using the fresh plating solution can always be performed by supplying a smaller amount of plating solution. That is, in this example, a pressurized fluid is introduced into the inside (upper part) of the anode chamber 530 to pressurize the anode chamber 530 at a pressure P _{10 so} that the plating liquid in the anode chamber 530 is supplied to the substrate. At this time, the fresh plating solution is preliminarily maintained in the interior of the first space 642a or in the lower pad 534a located below the anode 526 so as to be located in the anode chamber 530. The plating liquid immersed in can be prevented from mixing in the fresh plating liquid supplied to this substrate.

In addition, by providing the second space 642b between the upper pad 534b and the plating liquid impregnation material 532, the second space 642b can be used mainly as a space for holding a fresh plating solution. The effect of blocking the mixing of the plating liquid in the fresh plating liquid, which is located in the anode chamber 530 and immersing the anode 526 in the plating liquid in the two spaces 642b, can be exerted.

In order to introduce a fresh plating liquid into the first space 642a and replace the old plating liquid in the first space 642a with the fresh plating liquid, the plating liquid is discharged to the first space 642a in the Shanghai-dong housing 522. The plating liquid supplying part 652 to supply and the plating liquid discharge part 654 which attracts and discharges the plating liquid in the 1st space 642a are provided in the radially opposing position of the shanghai-dong housing 522 mutually. As shown in FIG. 47, the plating liquid supply unit 652 communicates with the plurality of discharge ports 656 provided at positions facing the first space 642a of the Shanghai-dong housing 522, and the discharge holes 656. It has the connection port 658 which penetrates the housing 522, and is comprised by providing the plating liquid supply port 660 which communicates with this connection port 658. In addition, the plating liquid discharge part 654 communicates with the plurality of suction holes 662 and the suction holes 662 provided at a position facing the first space 642a of the shanghai copper housing 522, and the shanghai copper housing ( It has the connection port 664 which penetrates 522, and is provided by providing the plating liquid discharge port 666 which communicates with this connection port 664. As shown in FIG.

As a result, the plating solution is extracted from the first space 642a via the plating liquid discharge part 654 while supplying a fresh plating liquid from the plating liquid supply part 652 into the first space 642a. It is possible to substitute a fresh plating solution.

The electrode head 502 is provided with a pressurizing mechanism which has an air bag 570 and presses the lower layer pad 534a to an arbitrary pressure on the surface (plated surface) of the substrate W held by the substrate stage 504. have. That is, in this example, a ring-shaped airbag 570 is disposed between the lower surface of the ceiling wall of the rotary housing 520 and the upper surface of the ceiling wall of the shandong housing 522, which is a pressurized fluid. It is connected to a pressurized fluid supply source (not shown) via the introduction pipe 572. As a result, the inside of the airbag 570 is pressurized to a pressure P ₉ while the rocking arm 500 is fixed to a predetermined position (process switch) on the plating processing unit 630 to maintain the substrate stage 504. The lower layer pad 534a is uniformly pressurized to a surface (coated surface) of one substrate W at an arbitrary pressure, and the pressure of the lower layer pad 534a is released by returning the pressure P ₉ to atmospheric pressure.

The shanghai-dong housing 522 is provided with a plating liquid suction tube 574 for sucking the plating liquid in the anode chamber 530 and a pressurized fluid introduction tube 576 for introducing a pressurized fluid, and inside the anode 526, Many thin holes 526a are provided. As a result, the plating liquid sucks the plating liquid in the anode chamber 530 through the plating liquid suction pipe 574 while the porous body 528 is immersed in the plating liquid to seal the anode chamber 530 in an airtight manner. It is sucked up from the anode chamber 530 toward the anode chamber 530, and is supplied to the upper surface of the substrate W by pressing the inside of the anode chamber 530 at a pressure P ₁₀ .

FIG. 48 shows a state in which the electrode head 502 is moved directly above the idling stage 632 and lowered again to supply a fresh plating liquid to the anode chamber 530 of the electrode head 502. The idling stage 632 has a plating liquid tray 600 for storing a fresh plating liquid, for example. The porous body 528 is immersed in the plating liquid collected in the plating liquid tray 600 to hermetically seal the inside of the anode chamber 530, and in this state, the plating liquid in the anode chamber 530 is passed through the plating liquid suction tube 574. By sucking, the fresh plating liquid in the plating liquid tray 600 is sucked up from the porous body 528 toward the anode chamber 530. When the liquid level of the fresh plating liquid sucked up in this way is located above the first space 642a, more preferably above the second space 642b, the suction of the plating liquid is stopped. As a result, the inside of the first space 642a, the inside of the lower layer pad 534a located below it, more preferably the inside of the second space 642b, and the inside of the upper layer pad 534b located below it. In principle, fresh plating liquid is maintained. At this time, the suction of the plating liquid is preferably performed at a slow speed in a range where the throughput does not drop.

FIG. 49 shows another state in which fresh plating liquid is supplied to the anode chamber 530 of the electrode head 502. In this example, for example, a fresh plating liquid is filled in the plating liquid tray 600 or the plating liquid is circulated. The porous body 528 is immersed in the plating liquid in the plating liquid tray 600 to hermetically seal the inside of the anode chamber 530, and in this state, the plating liquid supply port 660 is opened to introduce fresh plating liquid into the first space 642a. At the same time as the supply, the plating liquid discharge port 666 is opened, and the plating liquid is extracted from the first space 642a to mainly replace the inside of the first space 642a with a fresh plating liquid. After the replacement is completed, the plating solution supply port 660 is stopped and at the same time, the plating solution discharge port 666 is closed or the plating solution discharge port 666 is closed. After the supply of the plating liquid from 660 is continued, this supply is stopped. At this time, the plating liquid is preferably replaced at a slow speed in the range where the throughput does not drop. In addition, by collecting the fresh plating liquid in the plating liquid tray 600, a portion of the inside of the lower layer pad 534a positioned below the first space 642a can be replaced with the fresh plating liquid.

According to this example, the inside of the first space 642a, preferably the lower layer pad 534a located below this, more preferably the inside of the second space 642b and the same by the two methods described above. Inside the upper pad 534b positioned below, a fresh plating liquid can be maintained.

Next, the operation at the time of plating with this plating apparatus will be described.

First, the substrate stage 504 is raised while the substrate W is adsorbed and held on the upper surface of the substrate stage 504, and the peripheral edge portion of the substrate W is brought into contact with the cathode electrode 512 to enable energization. It raises again and press-contacts the sealing material 512 on the upper surface of the peripheral edge part of the board | substrate W, and seals the peripheral edge part of the board | substrate W watertightly. On the other hand, in the electrode head 502, in the idling stage 632, the inside of the first space 642a as above, preferably the inside of the lower layer pad 534a located below this, more preferably The electrode head 502 is mainly placed in the second space 642b and in the upper pad 534b positioned below it, and the electrode head 502 is kept at a predetermined position. That is, when the rocking arm 500 is once raised and then turned again, the electrode head 502 is positioned directly above the substrate stage 504, and then lowered to reach a predetermined position (process switch). Stop it. The inside of the anode chamber 530 is pressurized with a pressure P ₁₀ to discharge the plating liquid held by the electrode head 502 from the lower surface of the porous pad 534.

Thereby, the plating liquid held in the inside of the 1st space 642a etc. and the inside of the lower layer pad 534a located under the 1st space 642a, etc. is hold | maintained in the anode chamber 530, and the anode 526 is carried out. It can supply to the board | substrate W, preventing mixing with the plating liquid which was immersed.

Next, pressurized air is introduced into the air bag 570 to press the lower layer pad 534a downward to press the lower layer pad 534a to the surface (plated surface) of the substrate W at a predetermined pressure. In this state, the electrode head 502 and the substrate stage 504 are rotated (rotated). As a result, the lower layer pad 534a and the substrate W are moved relative to each other while pressing the lower layer pad 534a to the plated surface of the substrate W held by the substrate stage 504 at an arbitrary pressure prior to plating. ) And improves adhesion.

After the rotation of the electrode head 502 and the substrate stage 504 is stopped, the cathode electrode 512 is connected to the cathode of the plating power source 560, and the anode 526 is connected to the anode of the plating power source 560, respectively. In this way, the plated surface of the substrate W is plated. After the plating is continued for a predetermined time, the cathode electrode 512 and the anode 526 are disconnected from the plating power supply 560, and the inside of the anode chamber 530 is returned to atmospheric pressure, and the airbag 570 is returned. Return me to atmospheric pressure. Then, the rocking arm 500 is raised and turned again to return the electrode head 502 to its original position (idling position). This operation is repeated a predetermined number of times, if necessary, to form a copper layer 7 (see FIG. 1B) having a film thickness sufficient to fill the micro recesses for wiring on the surface (plated surface) of the substrate W. FIG. Then, the plating is finished.

According to the present invention, a fresh plating solution is held in advance in a porous body having a multi-layered structure and supplied to the substrate via the porous body immediately before plating, so that the plating liquid immersed in the anode is mixed in the fresh plating liquid supplied to the substrate. It is possible to prevent plating, and plating by using a fresh plating liquid can always be performed by supplying a smaller amount of plating liquid, whereby the consumption amount of the plating liquid can be reduced. In addition, it can easily cope with the process of using many kinds of plating liquid.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method, and in particular, is used to form a wiring by embedding a metal (wiring material) such as copper in a fine wiring pattern formed on a substrate such as a semiconductor substrate.

3 ... Beerhole 4 ... Trench
7 copper layer 8 wiring
9 ... shield 10 ... return box
18 ... Plating device 20 ... Cleaning and drying device
22 ... Bevel etching and backside cleaning device 24 ... Film thickness measuring instrument
26 ... Heat Annealing Unit 28 ... Pretreatment Unit
30 ... Electroless plating device 32 ... Polishing device
56. housing 58 ... substrate holder
60 treatment head 100 treatment tank
102 Cover 112 Nozzle Plate
112a ... spray nozzle 120 ... chemical tank
122 Chemical pump 124 Nozzle plate
124a ... Spray nozzle 132 ... Rinse solution source
200 ... Plating tank 202 ... Cleaning tank
204 ... substrate head 230 ... housing
232 ... Head section 234 ... Suction head
268 ... injection nozzle 280 ... injection nozzle
282 nozzle plate 286 head cleaning nozzle
316 ... heater 320 ... heat exchanger
322 Heater 324 Stirring pump
330 Plating solution management unit 332 Dissolved oxygen concentration meter
422 substrate stage 428 cleaning cup
430 ... Nozzle for chemicals 432 ... Pure nozzle
434 Cleaning Sponge 436
500 rocking arm 502 electrode head
504 ... substrate stage 504a ... vacuum passage
504b ... Vacuum suction groove 504c ... Pressure recess
506 ... cathode part 512 ... cathode electrode
514 seal material 520 rotating housing
522 ... up and down housing 524 ... rotating body
526 ... anode 528 ... porous body
530 Anode chamber 532 Plating impregnation material
534 Porous Pad 534a Lower Pad
534b ... Upper Pad 540 ... First Air Bag
544.Cylinder 560.Plating Power
562 ... Money Port 564 ... Backing Film
600 ... Plating Tray 604 ... Reservoir
608 Plating tank 610 Temperature controller
612 Plating solution analysis unit 820 Abrasive cloth (Polishing pad)
822 ... polishing table 824 ... top ring
826 ... Whetstone nozzle 828 ... dresser
922 substrate stage 924 center nozzle
926 Edge nozzle 928 Back nozzle
1002 ... Chamber 1004 ... Hot Plate
1006 ... Cool Plate

Claims (7)

A substrate having a fine recess for wiring covered with a seed layer is prepared,
A plating solution is supplied through a porous contact between the surface of the seed layer and the anode arranged at a predetermined interval from the seed layer,
In the plating by applying a plating voltage between the seed layer and the anode,
A change in the state of the plating voltage applied between the seed layer and the anode and a change in the pressurized state between the porous contact and the seed layer are correlated with each other. The method of claim 1,
The change in the pressurized state between the porous contact and the seed layer is a change in pressure between the porous contact and the seed layer. The method of claim 1,
The change of the state of the plating voltage applied between the seed layer and the anode is an interruption of the plating voltage applied between the seed layer and the anode. The method of claim 1,
The change in the state of the plating voltage applied between the seed layer and the anode and the change in the pressurized state between the porous contact and the seed layer are between the porous contact and the seed layer surface. Plating by applying a plating voltage when the pressure of R is relatively increased and by not applying a plating voltage when the pressure between the porous contact and the seed layer is relatively lower than the previous state. Way. The method of claim 1,
The change in the pressurized state between the porous contact and the seed layer is a change in contact between the porous contact and the seed layer surface and non-contact. The method of claim 1,
The change in the state of the plating voltage applied between the seed layer and the anode, and the change in the pressurized state between the porous contact and the seed layer, are in contact with the surface of the porous contact and the seed layer. And the application of a plating voltage between the seed layer and the anode is synchronized with each other. The method of claim 1,
The change in the state of the plating voltage applied between the seed layer and the anode and the change in the pressurized state between the porous contact and the seed layer when the surface of the porous contact and the seed layer are not in contact with each other. The plating voltage is not applied between the seed layer and the anode, and the plating voltage is applied between the seed layer and the anode after a period of time after contact between the porous contact and the seed layer surface. Plating method, characterized in that.

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