JP4423358B2 - Plating apparatus and plating method - Google Patents

Description

  The present invention relates to a plating apparatus and a plating method, and more particularly to a plating apparatus used for forming a wiring by embedding a metal (wiring material) such as copper in a fine circuit pattern formed on a substrate such as a semiconductor substrate. The present invention relates to a plating method.

  Recently, fine concave portions for wiring such as circuit-shaped wiring grooves (trench) and fine holes (via holes) are formed on a semiconductor substrate, and these are filled with copper (wiring material) by copper plating, and the remaining portion of copper A circuit is formed by removing a layer (plating film) by means such as CMP. In this damascene technique, a copper plating film is selectively deposited in a circuit-shaped wiring groove or fine hole, and in other parts, the less copper plating film is deposited, the later the load of CMP is reduced. Is preferable. Conventionally, in order to achieve such an object, a contrivance has been made with a plating solution such as a bath composition of the plating solution and a brightener to be used.

  As a plating apparatus used for plating of this type of fine and high aspect ratio wiring, the substrate is held with the surface (surface to be plated) facing upward (face up), and a cathode electrode is provided on the peripheral edge of the substrate. The substrate surface is used as a cathode, an anode is disposed above the substrate, and a plating voltage is applied between the substrate (cathode) and the anode while filling the plating solution between the substrate and the anode. There is known one in which the surface of a substrate (surface to be plated) is plated (see, for example, Patent Document 1).

  In this type of plating equipment that holds the substrate with the surface facing upward and performs plating in a single wafer type, the plating current distribution is made more uniform over the entire surface of the substrate, and the in-plane uniformity of the plating film In addition, since the substrate is generally conveyed with its surface facing upward and subjected to various treatments, it is possible to eliminate the need to turn the substrate over during plating.

  On the other hand, as a technique for selectively depositing a copper plating film in a circuit-shaped wiring groove, etc., plating is performed while bringing a porous body into contact with a substrate such as a semiconductor wafer and moving it relatively in the contact direction. The method of performing is known (for example, refer patent document 2).

  In this type of plating equipment, as a method for detecting the end point of plating and determining the timing for finishing plating, a method for stopping plating when the plating time reaches a certain value, cathode and anode A method of stopping the plating when the amount of electricity flowing between and the amount of electricity reaches a certain value, or a film thickness monitor, measuring the film thickness of the plating film with this film thickness monitor, In general, a method such as stopping plating when the film thickness reaches a predetermined value has been adopted.

Japanese translation of PCT publication No. 2002-506489 JP 2000-232078

  However, the conventional method of stopping plating when the plating time reaches a certain value or stopping plating when the amount of electricity reaches a predetermined value has the advantage of being simple and low cost. For example, when applied to so-called flattening plating used to form wiring by the damascene technique described above, it is necessary to consider process variations, and it is necessary to apply more plating than is necessary There is. Further, in the method using the film thickness monitor, the film thickness monitor is generally expensive, which leads to an increase in cost as a plating apparatus.

  In normal general plating, there is no fixed law for changes in current value and voltage value during plating. For this reason, changes in current value and voltage value during plating are constantly monitored. In general, the plating is not stopped when the current value or the voltage value reaches a certain value.

  The present invention has been made in view of the above circumstances, and without using an expensive mechanism such as a film thickness monitor, so-called flattening plating is performed until the plating film having a flat surface is formed. It is an object of the present invention to provide a plating apparatus and a plating method that can be surely performed without attaching.

The invention according to claim 1 is a plating apparatus for performing plating on a surface to be plated of a substrate having fine recesses for wiring and forming a plating film having a flat surface while embedding a plating film in the fine recesses. A substrate holding portion for holding the substrate; a sealing material that abuts against a peripheral portion of the surface of the substrate held by the substrate holding portion and seals the peripheral portion in a water-tight manner; and a cathode that contacts the substrate and energizes the substrate A porous portion made of a cathode portion provided with an electrode, an anode disposed so as to be movable up and down facing the surface to be plated of the substrate, and a water retention material disposed between the anode and the surface to be plated of the substrate wherein a quality body, a constant voltage control unit for controlling the voltage constant applied between the anode and the cathode, the monitored output signal value of the current flowing between the anode and the cathode electrode Constant voltage It is fed back to control unit, a current value monitor section in which the current value stops the energization between the anode and the cathode electrode when it is constant, and the porous body and the surface to be plated of the substrate contact And a drive mechanism that vibrates at least one of the porous body and the substrate so as to repeat non-contact with the plating apparatus.

  In general, in a plating method called flattening plating, there is a certain law in the current value and voltage value during plating, unlike normal plating. That is, when plating is performed with constant current control, as shown in FIG. 1, the voltage value increases with the progress of plating and becomes constant at a certain value. When plating is performed with constant voltage control, as shown in FIG. 2, the current value decreases with the progress of plating, and becomes constant at a certain value. This is because, as shown in FIG. 3A, when a large number of wiring grooves (trench) 4 are formed and the surface of a substrate W on which a seed layer (conductor film) 6 is formed is copper plated, The area of the plated surface at the start is the surface area including the inside of the wiring groove 4 of the seed layer 6, but when the copper layer (plating film) 7 having a flat surface is completed as shown in FIG. The area of the plated surface is the surface area of the substantially flat copper layer 7. For this reason, the area of the surface to be plated is reduced, and the area of the surface to be plated gradually decreases as the plating film thickness increases as the plating progresses, and the copper layer has a flat surface. This is because 7 is almost constant when completed.

  Therefore, by applying this fact, while performing plating with constant voltage control, the current value at this time is monitored, and when this current value becomes constant, the plating is stopped and the extra plating is stopped. Thus, a desired flat surface plating film can be obtained.

  Here, the constant voltage control unit and the current value monitoring unit may be provided independently or in a combined state. For example, by using a rectifier that has a constant voltage control unit and a current value monitor unit and automatically stops energization when there is no current change due to an internal program, it is only necessary to provide one in the device, There is an advantage that the device becomes compact and, in some cases, the cost can be reduced.

According to a second aspect of the present invention, there is provided a plating apparatus for performing plating on a surface to be plated of a substrate having fine recesses for wiring and forming a plating film having a flat surface while embedding the plating film in the fine recesses. A substrate holding portion for holding the substrate; a sealing material that abuts against a peripheral portion of the surface of the substrate held by the substrate holding portion and seals the peripheral portion in a water-tight manner; and a cathode that contacts the substrate and energizes the substrate A porous portion made of a cathode portion provided with an electrode, an anode disposed so as to be movable up and down facing the surface to be plated of the substrate, and a water retention material disposed between the anode and the surface to be plated of the substrate and quality body, a constant current control section for controlling a current flowing between the anode and the cathode constant, the constant current control on the monitored output signal voltage value between the anode and the cathode electrode Part And readback, the voltage value monitoring unit for stopping the energization between the cathode electrode and the anode, the porous body and the surface to be plated of the substrate contact and non-contact when the current value becomes constant A plating apparatus having a drive mechanism for vibrating at least one of the porous body and the substrate so as to repeat the above .

  As described above, in the plating method generally called planarization plating, when plating is performed with constant current control, the voltage value increases with the progress of plating and becomes constant at a certain value. Therefore, while performing plating with constant current control, the voltage value at this time is monitored, and when this voltage value becomes constant, the plating is stopped and the plating is stopped, so that there is no need to apply extra plating. A flat surface plating film can be obtained.

  Here, the constant current control unit and the voltage value monitoring unit may be provided independently or in a combined state. For example, by using a rectifier that has a constant current control unit and a voltage value monitoring unit and automatically stops energization when there is no voltage change due to an internal program, it is only necessary to provide one in the device, There is an advantage that the device becomes compact and, in some cases, the cost can be reduced.

The invention according to claim 3 further includes a pressing mechanism that presses the porous body with a desired force against the surface to be plated of the substrate held by the substrate holding portion. It is a plating device.
Thereby, for example, plating is performed in a state where the porous body is pressed against the surface to be plated of the substrate held by the substrate holding unit, and without being affected by variations in the shape of the wiring pattern (difference in width and size), A plating film having a flatter surface can be obtained.

As described above, the contact with the plating while repeating and non-contact between the porous body and the surface to be plated of the substrate in rows Ukoto, without being affected by variations in the shape of the wiring pattern, and the surface flatter A plating film can be obtained.

The invention according to claim 4 is a plating method in which a plated surface of a substrate having fine recesses for wiring is plated, and a plating film having a flat surface is formed while the plating film is embedded in the fine recesses. A porous body made of a water retaining material is interposed between the substrate and the anode, a plating solution is filled between the surface to be plated of the substrate and the anode, and the surface of the porous body and the surface of the substrate to be plated Plating by applying a constant voltage between the surface to be plated of the substrate and the anode while contacting or not contacting the porous body and the surface to be plated while repeating contact and non-contact. The current value flowing between the surface to be plated of the substrate and the anode is detected, and the time between the surface of the substrate to be plated and the anode is detected with a certain time difference from the time when the current value becomes constant. Stop energizing A plating method comprising Rukoto.

According to a fifth aspect of the present invention, there is provided a plating method in which a plated surface of a substrate having fine recesses for wiring is plated, and a plating film having a flat surface is formed while the plating film is embedded in the fine recesses. A porous body made of a water retaining material is interposed between the substrate and the anode, a plating solution is filled between the surface to be plated of the substrate and the anode, and the surface of the porous body and the surface of the substrate to be plated While repeating contact and non-contact, plating is performed by applying a different constant voltage between the surface to be plated of the substrate and the anode, when the porous body is in contact with the surface to be plated and when not in contact. The current value flowing between the surface to be plated of the substrate and the anode is detected, and the current between the surface to be plated of the substrate and the anode is detected with a certain time difference from the time when the current value becomes constant. To stop A plating method which is characterized.
In the invention described in claim 6, after the porous body is brought into contact with the surface to be plated of the substrate to be stationary, a constant voltage is applied between the surface to be plated of the substrate and the anode to perform plating. The plating method according to claim 4, wherein the plating method is performed.

The invention according to claim 7 is a plating method in which a plated surface of a substrate having fine recesses for wiring is plated, and a plating film having a flat surface is formed while the plating film is embedded in the fine recesses. A porous body made of a water retention material is interposed between the substrate and the anode, a plating solution is filled between the surface to be plated of the substrate and the anode, and the surface of the porous body and the surface to be plated of the substrate While repeating contact and non-contact, plating is performed by passing a constant current between the surface to be plated of the substrate and the anode at the time of contact or non-contact between the porous body and the surface to be plated of the substrate. While performing , the voltage value between the to-be-plated surface of the board | substrate and the said anode is detected, and electricity supply between the to-be-plated surface of the said board | substrate and the said anode with a fixed time difference from the time when the said voltage value became fixed To stop A plating method which is characterized.

The invention according to claim 8 is a plating method in which a plated surface of a substrate having fine recesses for wiring is plated, and a plating film having a flat surface is formed while the plating film is embedded in the fine recesses. A porous body made of a water retaining material is interposed between the substrate and the anode, a plating solution is filled between the surface to be plated of the substrate and the anode, and the surface of the porous body and the surface of the substrate to be plated While performing contact and non-contact, plating is performed by passing different constant currents between the surface to be plated of the substrate and the anode between the contacted surface of the porous body and the surface to be plated of the substrate and the non-contacted state. Detecting a voltage value between the surface to be plated of the substrate and the anode, and stopping energization between the surface to be plated of the substrate and the anode with a certain time difference from the time when the voltage value becomes constant. To be characterized by A plating method that.
According to the ninth aspect of the present invention, after the porous body is brought into contact with the surface to be plated of the substrate to be stationary, plating is performed by passing a constant current between the surface to be plated of the substrate and the anode. 9. The plating method according to claim 7 or 8 , wherein:

  According to the present invention, so-called flat plating can be reliably performed until a plating film having a flat surface is completed. In addition, it is possible to eliminate the need for attaching an extra plating film, reduce the material cost, and reduce the cost reduction and technical burden of the polishing process after plating. Furthermore, an expensive mechanism such as a film thickness monitor is not required, and the cost of the plating apparatus can be reduced.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment shows an example in which a wiring made of a copper layer is formed by embedding copper as a wiring material in a fine concave portion for wiring provided on the surface of a substrate such as a semiconductor wafer. Of course, other wiring materials may be used.

With reference to FIG. 4, the example of copper wiring formation in a semiconductor device is demonstrated. As shown in FIG. 4A, an insulating film 2 such as an oxide film made of SiO ₂ or a Low-K material film is deposited on the conductive layer 1a on the semiconductor substrate 1 on which the semiconductor element is formed, Inside this insulating film 2, a fine hole (via hole) 3 and a wiring groove (trench) 4 as fine concave portions for wiring are formed by, for example, lithography / etching technique, and a barrier layer 5 made of TaN or the like is formed thereon. Further, a seed layer 6 as a power feeding layer for electrolytic plating is formed thereon by sputtering or the like.

  Then, as shown in FIG. 4B, the surface of the substrate W is plated with copper, so that the fine holes 3 and the wiring grooves 4 of the substrate W are filled with copper, and the copper layer 7 is formed on the insulating film 2. To deposit. Thereafter, the barrier layer 5, seed layer 6 and copper layer 7 on the insulating film 2 are removed by chemical mechanical polishing (CMP) or the like, and the surface of the copper layer 7 filled in the fine holes 3 and the wiring grooves 4 is obtained. And the surface of the insulating film 2 are substantially flush. As a result, as shown in FIG. 4C, a wiring (copper wiring) 8 composed of the seed layer 6 and the copper layer 7 is formed inside the insulating film 2.

  Next, as shown in FIG. 4D, electroless plating is performed on the surface of the substrate W, and a protective film 9 made of a Co alloy, Ni alloy or the like is selectively formed on the surface of the wiring 8, thereby The surface of the wiring 8 is covered with a protective film 9 for protection.

FIG. 5: shows the top view of the substrate processing apparatus provided with the plating apparatus used for the plating method of this invention. As shown in FIG. 5, the substrate processing apparatus includes a rectangular apparatus frame 12 in which a transfer box 10 containing a plurality of substrates such as semiconductor wafers is detachable. Inside the apparatus frame 12, there are provided a load / unload station 14 and a transportable robot 16 that can move the substrate between the load / unload station 14. A pair of plating devices 18 are disposed on both sides of the transfer robot 16 with the transfer robot 16 in between. Further, on one side of the transfer robot 16 with a cleaning / drying device 20, bevel etching / back surface. The cleaning device 22 and the polishing device 32 are arranged in series, and on the other side, a heat treatment (annealing) device 26, a pretreatment device 28, and an electroless plating device 30 are arranged in series.

  Here, the device frame 12 is subjected to a light shielding process, whereby the following steps in the device frame 12 can be performed in a light-shielded state, that is, without irradiating light such as illumination light on the wiring. ing. Thus, by preventing light from being applied to the wiring, for example, it is possible to prevent a light potential difference from occurring when light is applied to a wiring made of copper, and the wiring from being corroded by this light potential difference.

  FIG. 6 shows an outline of the plating apparatus 18. As shown in FIG. 6, the plating apparatus 18 includes a swing arm 500 that can swing in the horizontal direction, and an electrode head 502 is rotatably supported at the tip of the swing arm 500. On the other hand, a substrate holding portion 504 that is positioned below the electrode head 502 and holds the substrate W with the surface (surface to be plated) facing upward is arranged to be movable up and down, and above the substrate holding portion 504, A cathode portion 506 is disposed so as to surround the peripheral edge portion of the substrate holding portion 504.

  In this example, an electrode head 502 having a diameter slightly smaller than the diameter of the substrate holding portion 504 is used, and the relative position between the electrode head 502 and the substrate holding portion 504 is not changed. An example is shown in which plating can be performed over substantially the entire surface (surface to be plated) of the substrate W held by the substrate holding unit 504. In addition, this example shows an example of application to a plating apparatus that employs a so-called face-up method in which plating is performed by holding the substrate with the surface facing upward, but the substrate is held with the surface facing downward. Of course, the present invention can also be applied to a plating apparatus that employs a so-called face-up method, in which plating is performed, and a so-called plate-type plating apparatus that performs plating by arranging a substrate in a vertical direction. .

  A ring-shaped vacuum suction groove 504b communicating with a vacuum passage 504a provided inside is provided at the peripheral edge of the upper surface of the substrate holding portion 504, and seal rings 508, 510 is attached. Accordingly, the substrate W is placed on the upper surface of the substrate holding portion 504, and the inside of the vacuum suction groove 504b is vacuum-sucked through the vacuum passage 504a, whereby the substrate W is sucked and held at its peripheral portion. ing.

  The swing arm 500 moves up and down via a not-shown vertical movement motor composed of a servo motor and a ball screw, and turns (swings) via a turn motor (not shown). Of course, a pneumatic actuator may be used instead of the motor.

  In this example, the cathode portion 506 includes a cathode electrode 512 divided into six parts, and an annular seal member 514 attached so as to cover the upper part of the cathode electrode 512. The seal member 514 is configured such that an inner peripheral edge thereof is inclined downward inward and gradually becomes thin, and an inner peripheral end portion hangs downward. As a result, when the substrate holding portion 504 is raised, the cathode electrode 512 is pressed against the peripheral portion of the substrate W held by the substrate holding portion 504 and energized, and at the same time, the inner peripheral end of the sealing material 514 is the peripheral edge of the substrate W. The plating solution is pressed against the upper surface of the substrate and sealed in a watertight manner to prevent the plating solution supplied to the upper surface (surface to be plated) of the substrate from seeping out from the end portion of the substrate W. To prevent contamination.

  In this example, the cathode portion 506 cannot move up and down and rotates integrally with the substrate holding portion 504. However, the cathode portion 506 can move up and down, and when it is lowered, the sealing material 514 is placed on the surface of the substrate W to be plated. You may comprise so that it may press-contact.

  The electrode head 502 has a bottomed cylindrical shape that opens downward, and includes a rotating housing 522 and a vertically moving housing 520 that are concentrically arranged. The rotating housing 522 is fixed to the lower surface of the rotating body 524 attached to the free end of the swing arm 500 and is configured to rotate integrally with the rotating body 524. On the other hand, the vertical movement housing 520 is configured to be positioned inside the rotary housing 522 and to rotate integrally with the rotary housing 522 and move up and down relatively. The vertically moving housing 520 has an anode chamber 530 into which a plate-like anode 526 is disposed and a plating solution Q into which the anode 526 is immersed is introduced by closing the lower end opening with a porous body 528. A compartment is formed.

  In this example, the porous body 528 has a multilayer structure in which a porous material is laminated in three layers. That is, the porous body 528 is composed of a plating solution impregnated material 532 that mainly plays a role of holding the plating solution, and a porous pad 534 attached to the lower surface of the plating solution impregnated material 532, and this porous pad 534. Is composed of a lower layer pad 534 a that is in direct contact with the substrate W, and an upper layer pad 534 b that is interposed between the lower layer pad 534 a and the plating solution impregnated material 532. The plating solution impregnated material 532 and the upper layer pad 534b are located inside the vertical movement housing 520, and the lower layer pad 534a closes the lower end opening of the vertical movement housing 520.

Thus, the porous body 528 having a multilayer structure is sufficient to flatten the uneven surface on the surface to be plated of the substrate W, for example, as the porous pad 534 (lower layer pad 534a) that contacts the substrate W. It is possible to use one having excellent flatness.
The lower layer pad 534a has a flat surface (surface) in contact with the surface (surface to be plated) of the substrate W to a certain degree and has fine through holes through which the plating solution can pass. At least the contact surface is an insulator or an insulating material. It is necessary to be formed of a highly specific substance. The flatness required for the lower layer pad 534a is, for example, a maximum roughness (Rmax) of about several tens of μm or less.

  The fine through-holes required for the lower layer pad 534a are preferably round through-holes in order to maintain flatness on the contact surface. Further, the diameter of the fine through-holes and the number per unit area are plated. Although the optimum value varies depending on the film quality and the wiring pattern, it is preferable that both values are small in order to improve the selectivity of plating growth in the recess. Specifically, the number of fine through holes per hole or the number per unit area may be such that, for example, micro through holes having a hole diameter of 30 μm or less, preferably 5 to 20 μm, are present with a porosity of 50% or less. .

Furthermore, the lower pad 534a is preferably some hardness, e.g., its tensile strength is 5 to 100 kg / cm ^2, bending elastic strength may be about 200~10000kg / cm ^2.

  The lower layer pad 534a is preferably made of a hydrophilic material. For example, a material obtained by hydrophilizing or polymerizing a hydrophilic group is used for the material shown below. Examples of such materials include porous polyethylene (PE), porous polypropylene (PP), porous polyamide, porous polycarbonate, or porous polyimide. Among these, porous PE, porous PP, porous polyamide, etc. are prepared by using fine powders such as ultra-high molecular weight PE, PP, polyamide, etc. as raw materials, compacting them, and sintering molding. (Mitsubishi Resin Co., Ltd.), Sun Fine UH, Sun Fine AQ (both Asahi Kasei Co., Ltd.), Spacy (manufactured by Spacey Chemical Co., Ltd.), etc. are commercially available. The porous polycarbonate is prepared by, for example, penetrating a polycarbonate film through a high energy heavy metal (copper or the like) accelerated by an accelerator and selectively etching a track (trajectory) on a straight line generated thereby. Is.

  The lower layer pad 534a may be a surface (surface) in contact with the surface of the substrate W that has been flattened by compression processing, mechanical processing, or the like, so that higher preferential precipitation in a minute groove can be expected. .

  On the other hand, the plating solution impregnated material 532 is made of porous ceramics such as alumina, SiC, mullite, zirconia, titania, cordierite, or the like, or a hard porous body such as a sintered body of polypropylene or polyethylene, a composite thereof, or a woven material. Consists of cloth and non-woven fabric. For example, in the case of alumina-based ceramics, the pore diameter is 30 to 200 μm, and in the case of SiC, the pore diameter is 30 μm or less, the porosity is 20 to 95%, the thickness is 1 to 20 mm, preferably 5 to 20 mm, and more preferably 8 to About 15 mm is used. In this example, for example, the porous ceramic plate is made of alumina with a porosity of 30% and an average pore diameter of 100 μm. And, by containing the plating solution inside this, that is, the porous ceramic plate itself is an insulator, by allowing the plating solution to enter inside intricately and by following a fairly long path in the thickness direction, It is comprised so that it may have an electrical conductivity smaller than the electrical conductivity of a plating solution.

Thus, by disposing the plating solution impregnated material 532 in the anode chamber 530 and generating a large resistance by the plating solution impregnated material 532, the influence of the resistance of the seed layer 6 (see FIG. 4) can be ignored. The in-plane uniformity of the plating film can be improved by reducing the in-plane difference of the current density due to the electric resistance of the surface of the substrate W.

  The electrode head 502 is provided with a pressing mechanism including an airbag 540 in this example that presses the lower layer pad 534a to the surface (surface to be plated) of the substrate W held by the substrate holding unit 504 with an arbitrary pressure. In other words, in this example, a ring-shaped airbag (pressing mechanism) 540 is disposed between the lower surface of the ceiling wall of the rotary housing 522 and the upper surface of the ceiling wall of the vertical movement housing 520. A pressurized fluid supply source (not shown) is connected via a pressurized fluid introduction pipe 542.

  As a result, the surface of the substrate W held by the substrate holding portion 504 can be obtained by pressurizing the interior of the airbag 540 with the pressure P in a state where the swing arm 500 is fixed at a predetermined position (process position) so as not to move up and down. The lower layer pad 534a can be released from the lower surface pad 534a by pressing the lower layer pad 534a more uniformly with an arbitrary pressure and returning the pressure P to the atmospheric pressure.

  The vertical movement housing 520 is provided with a plating solution introduction tube 544 for introducing a plating solution into the interior and a pressurized fluid introduction tube (not shown) for introducing a pressurized fluid. Many pores 526a are provided. As a result, the plating solution Q is introduced into the anode chamber 530 from the plating solution introduction pipe 544 and pressurizes the inside of the anode chamber 530, thereby passing through the pores 526 a of the anode 526 and forming the plating solution impregnated material 532. It reaches the upper surface, passes from the inside of the porous pad 534 (upper layer pad 534b and lower layer pad 534a), and reaches the upper surface of the substrate W held by the substrate holding portion 504.

  Note that the inside of the anode chamber 530 also includes a gas generated by a chemical reaction, and thus the pressure may change. For this reason, the pressure in the anode chamber 530 is controlled to a certain set value by feedback control during the process.

  Here, for example, when performing copper plating, the anode 526 is composed of copper containing 0.03 to 0.05% phosphorus (phosphorous copper) in order to suppress the formation of slime. However, it may be an insoluble metal such as platinum or titanium, or an insoluble electrode obtained by plating platinum etc. on a metal, and replacement is not necessary. It is preferable that Further, a net-like shape may be used for ease of distribution of the plating solution.

  The cathode electrode 512 is electrically connected to the cathode of the plating power source 550, and the anode 526 is electrically connected to the anode of the plating power source 550. The power source 550 is configured to be controlled by the constant voltage control unit 552 so as to apply a constant voltage between the cathode electrode 512 and the anode 526. As described above, the current value monitoring unit 554 for monitoring the current value flowing between the cathode electrode 512 and the anode 526 when a constant voltage is applied between the cathode electrode 512 and the anode 526 is provided. The detection signal of the current value monitor unit 554 is fed back (input) to the constant voltage control unit 552.

  Accordingly, a constant voltage is applied between the cathode electrode 512 and the anode 526 via the constant voltage control unit 552, that is, plating is performed by constant voltage control. During the plating, the cathode electrode 512 and the anode 526 The current value flowing between the cathode electrode 512 and the anode 526 is stopped with a certain time difference from the time when the current value becomes constant, and the plating is stopped. That is, it is determined by a determination program or the like whether or not the current value detected by the current value monitor unit 554 has become constant, and when it is determined that the current value has become constant, the constant voltage control unit 552 supplies power to the power source 550. A signal for stopping energization is input, and energization is stopped with a certain time difference.

  Here, by setting the time difference from when the current value becomes constant to when the energization is stopped to 0 second, the plating is stopped immediately after the flat plating film is completed to prevent excessive plating from being applied. can do. In addition, it may be possible to make the surface of the plating film smoother by providing a time difference of several seconds from the time when the current value becomes constant until the energization is stopped and performing additional plating for several seconds. Good.

  Next, an operation when performing plating with this plating apparatus will be described. First, in a state where the substrate W is attracted and held on the upper surface of the substrate holding portion 504, the substrate holding portion 504 is raised, the peripheral portion of the substrate W is brought into contact with the cathode electrode 512, and the substrate can be energized. A sealing material 514 is pressed against the upper surface of the peripheral edge of W to seal the peripheral edge of the substrate W in a watertight manner.

  On the other hand, in the electrode head 502, a predetermined position (process position) is maintained in a state where the plating solution Q is held from a position (idling position) where idling is performed to replace the plating solution and remove bubbles. ). That is, when the swing arm 500 is once lifted and further swung, the electrode head 502 is positioned at a position directly above the substrate holding portion 504 and then lowered to reach a predetermined position (process position). Stop. Then, the inside of the anode chamber 530 is pressurized, and the plating solution Q held by the electrode head 502 is discharged from the lower surface of the porous pad 534. Next, pressurized air is introduced into the air bag 540, the lower layer pad 534a is pressed downward, and is brought into contact with the upper surface (surface to be plated) of the substrate W held by the substrate holding portion 504 with a predetermined pressure.

  In this manner, with the lower layer pad 534a in contact with the surface of the substrate W, the lower layer pad 534a is rotated at a speed of, for example, 1 rotation / sec through the rotating body 524 and rubbed against the surface of the substrate W. Of course, the lower layer pad 534a may be fixed and the substrate W may be rotated. At the same time, the cathode electrode 512 is connected to the cathode of the plating power source 550 and the anode 526 is connected to the anode of the plating power source 550, and a constant voltage is applied between the cathode electrode 512 and the anode 526 via the constant voltage controller 552. And plating. During the plating, the current value flowing between the cathode electrode 512 and the anode 526 is monitored by the current value monitor unit 554. Then, it is determined by a determination program or the like to detect that the current value has become constant, and the cathode electrode 512 and the anode 526 have a certain time difference from, for example, 0 seconds to several seconds from the time when the current value becomes constant. Stop the energization between them and stop plating.

  As described above, in a plating method generally called planarization plating, when plating is performed with constant voltage control, the current value increases with the progress of plating, and becomes constant at a certain value. In particular, by performing plating while rubbing the lower layer pad 534a constituting the porous body 528 against the surface to be plated of the substrate W held by the substrate holding portion 504, plating with a flat surface is possible regardless of variations in the shape of the wiring pattern. A film can be formed, and this phenomenon appears remarkably. Therefore, while performing plating with constant voltage control, the current value at this time is monitored, and when the current value becomes constant, the plating is stopped and the plating is stopped without adding extra plating. A flat surface plating film can be obtained.

  Then, after the plating is finished, the inside of the anode chamber 530 is returned to atmospheric pressure, and the inside of the airbag 540 is further returned to atmospheric pressure to release the pressure on the substrate W of the lower layer pad 534a. Then, the electrode head 502 is raised and returned to the lower idling position.

  As described above, pressurized air is introduced into the air bag 540, the lower layer pad 534a is pressed downward, and a predetermined pressure is applied to the upper surface (surface to be plated) of the substrate W held by the substrate holding portion 504. After contacting, if necessary, the lower layer pad 534a is rubbed against the surface of the substrate W by two rotations at a speed of 1 rotation / sec, for example, and then the rotation of the lower layer pad 534a is stopped. Is connected to the cathode of the plating power source 550 and the anode 526 is connected to the anode of the plating power source 550, and plating is performed by applying a constant voltage between the cathode electrode 512 and the anode 526 via the constant voltage control unit 552. At the same time, the current value flowing between the cathode electrode 512 and the anode 526 may be monitored by the current value monitor unit 554.

  Even in this case, the lower layer pad 534a constituting the porous body 528 is brought into contact with the surface to be plated of the substrate W held by the substrate holding unit 504 and stopped, and then the plating is performed to form the wiring pattern. A plating film with a flat surface can be formed regardless of variations in width (difference in width and size). With this, when plating is performed with constant voltage control, the current value increases with the progress of plating. The phenomenon that becomes constant by value appears remarkably. For this reason, by detecting the time when the current value becomes constant and stopping the plating, it is possible to obtain a target flat plating film without applying extra plating.

In this example, an example is shown which is adapted to move relative while contacting each other and the substrate W held by the lower pad 534a and the substrate holding portion 504 constituting the porous body 528, embodiments of the present invention plating apparatus, as shown in FIG. 7, the to lower pad 534a constituting the porous body 628 is repeated contact and non-contact with the surface to be plated of the substrate W held by the substrate holder 504 (see FIG. 6) and so as to vibrate the lower pad 534a. It should be noted, but it may also be so as to vibrate the substrate W.

According to the plating apparatus of the embodiment of the present invention , the lower layer pad 534a is vibrated so that the lower layer pad 534a and the surface to be plated of the substrate W repeat contact and non-contact, and at the same time, the cathode electrode 512 is plated as described above. The anode 526 is connected to the cathode of the power source 550 and the anode of the plating power source 550, respectively, and a constant voltage is applied between the cathode electrode 512 and the anode 526 via the constant voltage controller 552 to perform plating. The current value flowing between the cathode electrode 512 and the anode 526 is monitored by the current value monitor unit 554.

  Even in this case, the shape of the wiring pattern can be obtained by performing plating while repeating contact and non-contact between the lower layer pad 534a constituting the porous body 528 and the surface to be plated of the substrate W held by the substrate holding portion 504. A plating film having a flat surface can be formed regardless of variations in the thickness. Thus, similarly to the above, by detecting when the current value becomes constant and stopping the plating, it is possible to obtain a target flat surface plating film without applying excessive plating.

As described above, the plating method according to the embodiment of the present invention introduces pressurized air into the airbag 540 and presses the lower layer pad 534a downward. After a predetermined time has elapsed, the interior of the airbag 540 is returned to atmospheric pressure to lower the lower layer. The operation of releasing the downward pressing of the pad 534a is repeated, whereby the lower layer pad 534a and the surface of the substrate W are repeatedly contacted and non-contacted as shown in FIG. In this state, as shown in FIG. 8B, the cathode electrode 512 is used as the cathode of the plating power source 550 and the anode 526 is used as the anode of the plating power source 550 only when the lower layer pad 534a is in contact with the surface of the substrate. Each is connected, and a constant voltage is applied between the cathode electrode 512 and the anode 526 via the constant voltage control unit 552 to perform plating. At the same time, the current value monitor unit 554 connects the cathode electrode 512 and the anode 526 to each other. The value of the current flowing between them may be monitored. When the lower layer pad 534a and the surface of the substrate are in contact with each other, they may be moved relative to each other or may be held stationary.

In this case, as shown in FIG. 8 (c), the predetermined waiting time t ₁ is provided, in contact with the lower pad 534a and the surface of the substrate, after the elapse of the waiting time t _1, the cathode electrode 512 plating power source The anode 526 may be connected to the anode of the plating power source 550, respectively, to the cathode of 550.

Further, as shown in FIG. 8 (d), only when the lower pad 534a and the surface of the substrate is not in contact, further provided with a waiting time t _2, and the lower pad 534a and the surface of the substrate is solved contact Alternatively, after the waiting time t ₂ has elapsed, plating may be performed by applying a constant voltage between the cathode electrode 512 and the anode 526.
Further, although not shown, the electrical conditions may be changed between when the lower layer pad 534a and the surface of the substrate are in contact with each other, that is, different constant voltages may be applied.

Figure 9 shows another because Kki device 18 used in the plating method of the present invention. This example is different from the example shown in FIG. 6 in that the power source 550 is controlled by the constant current control unit 556 so that a constant current flows between the cathode electrode 512 and the anode 526, and the cathode electrode 512 and the anode A voltage value monitor unit 558 for monitoring a voltage value between the cathode electrode 512 and the anode 526 when a constant current is passed between the voltage value monitor unit 526 and the detection signal of the voltage value monitor unit 558 is a constant current. This is a point of being fed back (input) to the control unit 556.

  As a result, a constant current is passed between the cathode electrode 512 and the anode 526 via the constant current control unit 556, that is, plating is performed by constant current control, and the cathode electrode 512 and the anode 526 are subjected to plating during the plating. The voltage value between them is monitored by a voltage value monitor 558, and the current supply between the cathode electrode 512 and the anode 526 is stopped with a certain time difference from the time when the voltage value becomes constant, and the plating is stopped. That is, it is determined by a determination program or the like whether or not the voltage value detected by the voltage value monitor unit 558 has become constant, and when it is determined that the voltage value has become constant, the constant current control unit 556 supplies power to the power source 550. A signal for stopping energization is input, and energization is stopped with a certain time difference.

  In this example, almost the same as the above example, pressurized air is introduced into the airbag 540, the lower layer pad 534a is pressed downward, and the upper surface of the substrate W held by the substrate holding portion 504 (to be plated) The lower electrode pad 534a is rotated through the rotating body 524 at a speed of, for example, 1 rotation / sec and rubbed against the surface of the substrate W while being in contact with the surface) at a predetermined pressure. The anode 526 is connected to the anode of the plating power source 550, and a constant current is passed between the cathode electrode 512 and the anode 526 via the constant current control unit 556 to perform plating. During the plating, the voltage value flowing between the cathode electrode 512 and the anode 526 is monitored by the voltage value monitor unit 558. Then, it is determined by a determination program or the like to detect that the voltage value has become constant, and the cathode electrode 512 and the anode 526 have a certain time difference, for example, from 0 second to several seconds from the time when the voltage value becomes constant. Stop energization during the process and stop plating.

  As described above, in the plating method generally called planarization plating, when plating is performed with constant current control, the voltage value increases with the progress of plating and becomes constant at a certain value. In particular, by performing plating while rubbing the lower layer pad 534a constituting the porous body 528 against the surface to be plated of the substrate W held by the substrate holding portion 504, plating with a flat surface is possible regardless of variations in the shape of the wiring pattern. A film can be formed, and this phenomenon appears remarkably. Therefore, while performing plating with constant current control, the voltage value at this time is monitored, and when this voltage value becomes constant, the plating is stopped and the plating is stopped, so that there is no need to apply extra plating. A flat surface plating film can be obtained.

  As described above, pressurized air is introduced into the air bag 540, the lower layer pad 534a is pressed downward, and a predetermined pressure is applied to the upper surface (surface to be plated) of the substrate W held by the substrate holding portion 504. After contacting, if necessary, the lower layer pad 534a is rubbed against the surface of the substrate W by two rotations at a speed of 1 rotation / sec, for example, and then the rotation of the lower layer pad 534a is stopped. Is connected to the cathode of the plating power source 550 and the anode 526 is connected to the anode of the plating power source 550, and a constant current is passed between the cathode electrode 512 and the anode 526 via the constant current control unit 556 to perform plating. At the same time, the voltage value monitor 558 may monitor the voltage value applied between the cathode electrode 512 and the anode 526.

In the plating apparatus according to another embodiment of the present invention, as shown in FIG. 7, the lower layer pad 534a constituting the porous body 628 is in contact with the surface to be plated of the substrate W held by the substrate holding portion 504 (see FIG. 6). The lower layer pad 534a is vibrated so as to repeat non-contact with the lower layer pad 534a and the lower surface pad 534a is vibrated so as to repeat contact and non-contact between the lower surface pad 534a and the surface to be plated of the substrate W. The cathode electrode 512 is connected to the cathode of the plating power source 550, the anode 526 is connected to the anode of the plating power source 550, and a constant current is passed between the cathode electrode 512 and the anode 526 via the constant current control unit 556 for plating. It was carried out, at the same time, you monitors the voltage value applied between the cathode electrode 512 and anode 526 by a voltage value monitor section 558.

As shown in FIG. 8 (a) , the plating method according to another embodiment of the present invention repeats contact and non-contact between the lower layer pad 534a and the surface of the substrate W as shown in FIG. 8 (a). In addition, only when the lower layer pad 534a is in contact with the surface of the substrate, the cathode electrode 512 is connected to the cathode of the plating power source 550 and the anode 526 is connected to the anode of the plating power source 550, and the constant current control unit 556 is connected. , plating is performed by feeding a constant current between the cathode electrode 512 and anode 526, at the same time, it monitors the voltage value applied between the cathode electrode 512 and anode 526 by a voltage value monitor section 558.

In this case, as shown in FIG. 8 (c), the predetermined waiting time t ₁ is provided, in contact with the lower pad 534a and the surface of the substrate, after the elapse of the waiting time t _1, the cathode electrode 512 plating power source The anode 526 may be connected to the anode of the plating power source 550, respectively, to the cathode of 550.

Further, as shown in FIG. 8 (d), only when the lower pad 534a and the surface of the substrate is not in contact, further provided with a waiting time t _2, and the lower pad 534a and the surface of the substrate is solved contact After the waiting time t ₂ has elapsed, plating may be performed by passing a constant current between the cathode electrode 512 and the anode 526.
Further, although not shown, the electrical conditions may be changed between when the lower layer pad 534a and the surface of the substrate are in contact with each other, that is, different constant currents may be applied.

  FIG. 10 shows a plating solution management and supply system that manages the composition and temperature of the plating solution and supplies it to the plating apparatus 18. As shown in FIG. 10, a plating solution tray 600 for idling by immersing the electrode head 502 of the plating apparatus 18 is provided, and this plating solution tray 600 is connected to a reservoir 604 through a plating solution discharge pipe 602. The plating solution discharged through the plating solution discharge pipe 602 enters the reservoir 604.

The plating solution that has entered the reservoir 604 enters the plating solution adjustment tank 608 as the pump 606 is driven. This plating solution adjustment tank 608 is provided with a temperature controller 610 and a plating solution analysis unit 612 for taking out and analyzing the sample solution, and further, a component replenishment pipe 614 for replenishing components that are deficient by the analysis of the plating solution analysis unit 612. And the plating solution in the plating solution adjustment tank 608 flows along the plating solution supply pipe 620 as the pump 616 is driven, passes through the filter 618, and is returned to the plating solution tray 600. It has become.

  Thus, by adjusting the composition and temperature of the plating solution to be constant in the plating solution adjustment tank 608, supplying the adjusted plating solution to the electrode head 502 of the plating apparatus 18, and holding it by the electrode head 502, A plating solution having a constant composition and temperature can always be supplied to the electrode head 502 of the plating apparatus 18.

  11 and 12 show an example of a cleaning / drying apparatus 20 that cleans (rinses) and dries the substrate. In other words, the cleaning / drying apparatus 20 is an apparatus that first performs chemical cleaning and pure water cleaning (rinsing), and then completely drys the cleaned substrate W by rotating the spindle. A substrate stage 422 having a clamping mechanism 420 for gripping and a substrate attaching / detaching lifting plate 424 for opening and closing the clamping mechanism 420 are provided.

  The substrate stage 422 is connected to the upper end of a spindle 426 that rotates at a high speed as a spindle rotation motor (not shown) is driven. Further, a cleaning cup 428 for preventing the processing liquid from scattering is disposed around the substrate W gripped by the clamp mechanism 420, and the cleaning cup 428 moves up and down in accordance with the operation of a cylinder (not shown). ing.

  In addition, the cleaning / drying apparatus 20 includes a chemical solution nozzle 430 for supplying a treatment liquid to the surface of the substrate W gripped by the clamp mechanism 420, a plurality of pure water nozzles 432 for supplying pure water to the back surface of the substrate W, And a rotatable pencil-type cleaning sponge 434 disposed above the substrate W gripped by the clamp mechanism 420. The cleaning sponge 434 is attached to a free end of a swing arm 436 that can swing in the horizontal direction. A clean air introduction port 438 for introducing clean air into the apparatus is provided at the top of the cleaning / drying apparatus 20.

  In the cleaning / drying apparatus 20 having such a configuration, the processing liquid is supplied from the chemical solution nozzle 430 toward the cleaning sponge 434 while the substrate W is gripped and rotated by the clamp mechanism 420 and the swivel arm 436 is swung. However, the surface of the substrate W is cleaned by rubbing the cleaning sponge 434 against the surface of the substrate W. Then, pure water is supplied from the pure water nozzle 432 to the back surface of the substrate W, and the back surface of the substrate W is simultaneously cleaned (rinsed) with pure water sprayed from the pure water nozzle 432. The substrate W thus cleaned is spin-dried by rotating the spindle 426 at a high speed.

  FIG. 13 shows an example of a bevel etching / back surface cleaning apparatus 22. The bevel etching / back surface cleaning device 22 simultaneously performs etching and back surface cleaning of the copper layer 7 (see FIG. 4) attached to the edge (bevel) portion of the substrate, and further, copper in the circuit forming portion provided on the substrate surface. It is intended to suppress the growth of the natural oxide film, and is positioned inside the bottomed cylindrical waterproof cover 920 so that the substrate W is faced up by a spin chuck 921 at a plurality of locations along the circumferential direction of the peripheral portion. A substrate stage 922 that is held horizontally and rotated at a high speed, a center nozzle 924 that is disposed substantially above the center of the surface of the substrate W held by the substrate stage 922, and a substrate nozzle 924 that is disposed above the peripheral edge of the substrate W. Edge nozzle 926. The center nozzle 924 and the edge nozzle 926 are disposed downward. In addition, a back nozzle 928 is disposed upward and positioned substantially below the center of the back side of the substrate W. The edge nozzle 926 is configured to be movable in the diameter direction and the height direction of the substrate W.

  The movement width L of the edge nozzle 926 can be arbitrarily positioned from the outer peripheral end surface of the substrate toward the center, and a set value is input in accordance with the size of the substrate W, the purpose of use, and the like. Normally, the edge cut width C is set in the range of 2 mm to 5 mm, and if the amount of liquid flowing from the back surface to the front surface is greater than the number of revolutions, the copper layer within the set cut width C is removed. can do.

  Next, a cleaning method using the bevel etching / back surface cleaning apparatus 22 will be described. First, the substrate W is horizontally rotated integrally with the substrate stage 922 while the substrate is held horizontally by the substrate stage 922 via the spin chuck 921. In this state, an acid solution is supplied from the center nozzle 924 to the central portion on the surface side of the substrate W. The acid solution may be any non-oxidizing acid such as hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, or succinic acid. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 926 to the peripheral edge of the substrate W. As the oxidant solution, ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, or the like is used, or a combination thereof is used.

  Thereby, in the region of the edge cut width C at the peripheral edge of the substrate W, the copper layer or the like formed on the upper surface and the end surface is rapidly oxidized with the oxidizing agent solution, and simultaneously supplied from the center nozzle 924 to the entire surface of the substrate. It is etched and dissolved away by the spreading acid solution. In this way, by mixing the acid solution and the oxidant solution at the peripheral edge of the substrate, a steeper etching profile can be obtained as compared to supplying the mixed water from the nozzle in advance. At this time, the etching rate of copper is determined by their concentration. Further, when a copper natural oxide film is formed on the circuit forming portion on the surface of the substrate, the natural oxide is immediately removed by an acid solution that spreads over the entire surface of the substrate as the substrate rotates, and grows. There is nothing. Note that after the supply of the acid solution from the center nozzle 924 is stopped, the supply of the oxidant solution from the edge nozzle 926 is stopped to oxidize silicon exposed on the surface and suppress the adhesion of copper. be able to.

  On the other hand, the oxidizing agent solution and the silicon oxide film etching agent are supplied simultaneously or alternately from the back nozzle 928 to the center of the back surface of the substrate. Thereby, copper or the like adhering in a metallic state to the back side of the substrate W can be oxidized together with the silicon of the substrate with an oxidant solution and removed by etching with a silicon oxide film etchant. It is preferable to use the same oxidant solution as the oxidant solution supplied to the surface in order to reduce the types of chemicals. Also, hydrofluoric acid can be used as the silicon oxide film etchant, and the number of chemicals can be reduced if hydrofluoric acid is used for the acid solution on the surface side of the substrate. As a result, a hydrophobic surface is obtained if the oxidant supply is stopped first, and a saturated surface (hydrophilic surface) is obtained if the etchant solution is stopped first, and the back surface is adjusted according to the requirements of the subsequent process. You can also

  After supplying the acid solution, that is, the etching solution to the substrate in this way to remove the metal ions remaining on the surface of the substrate W, the pure water is further supplied to perform pure water replacement, and then the etching solution is removed. Spin drying. In this way, the removal of the copper layer within the edge cut width C at the peripheral edge portion of the substrate surface and the removal of the copper contamination on the back surface are simultaneously performed, and this processing can be completed within, for example, 80 seconds. The edge cut width of the edge can be arbitrarily set (2 mm to 5 mm), but the time required for etching does not depend on the cut width.

  14 and 15 show a heat treatment (annealing) apparatus 26. This heat treatment apparatus 26 is located inside a chamber 1002 having a gate 1000 for taking in and out the substrate W, and cools the substrate W by flowing a hot plate 1004 for heating the substrate W to 400 ° C., for example, and cooling water, for example. Cool plates 1006 are arranged one above the other. In addition, a plurality of elevating pins 1008 penetrating through the inside of the cool plate 1006 and extending in the vertical direction and placing and holding the substrate W on the upper end are arranged to be movable up and down. Further, a gas introduction pipe 1010 for introducing an antioxidation gas between the substrate W and the hot plate 1004 during annealing, and a gas introduced from the gas introduction pipe 1010 and flowing between the substrate W and the hot plate 1004. The gas exhaust pipe 1012 for exhausting the gas is disposed at a position facing each other across the hot plate 1004.

Gas introduction pipe 1010, and _{N 2} gas flowing in the _{N 2} gas inlet passage 1016 having a filter 1014a inside, in the mixer 1020 and a _{H 2} gas flowing through the _{H 2} gas introduction passage 1018 having a filter 1014b therein The mixed gas is connected to the mixed gas introduction path 1022 through which the gas mixed in the mixer 1020 flows.

  Thus, the substrate W carried into the chamber 1002 through the gate 1000 is held by the lift pins 1008, and the distance between the hot plate 1004 and the substrate W holding the lift pins 1008 by the lift pins 1008 is 0.1 to 0.1, for example. Raise until about 1.0 mm. In this state, the substrate W is heated through the hot plate 1004 to 400 ° C., for example, and at the same time, an antioxidant gas is introduced from the gas introduction pipe 1010 to flow between the substrate W and the hot plate 1004. Then, the gas is exhausted from the gas exhaust pipe 1012. As a result, the substrate W is annealed while preventing oxidation, and this annealing is continued for, for example, several tens of seconds to 60 seconds to complete the annealing. The heating temperature of the substrate is selected from 100 to 600 ° C.

After the annealing, the elevating pins 1008 are lowered until the distance between the substrate W holding the elevating pins 1008 and the cool plate 1006 becomes, for example, about 0 to 0.5 mm. In this state, by introducing cooling water into the cool plate 1006, the substrate is cooled, for example, for about 10 to 60 seconds until the temperature of the substrate W becomes 100 ° C. or lower. Transport to.
In this example, a mixed gas in which N ₂ gas and several percent of H ₂ gas are mixed is allowed to flow as the antioxidant gas, but only N ₂ gas may flow.

  16 to 22 show a pretreatment apparatus 28 that performs a pretreatment for electroless plating of a substrate. The pre-processing device 28 includes a fixed frame 52 attached to the upper part of the frame 50 and a moving frame 54 that moves up and down relatively with respect to the fixed frame 52. The moving frame 54 opens downward. A processing head 60 having a bottomed cylindrical housing portion 56 and a substrate holder 58 is suspended and supported. In other words, the head rotating servo motor 62 is attached to the moving frame 54, and the housing portion 56 of the processing head 60 is connected to the lower end of the output shaft (hollow shaft) 64 that extends below the servo motor 62.

  As shown in FIG. 19, a vertical shaft 68 that rotates integrally with the output shaft 64 is inserted into the output shaft 64 through a spline 66, and a ball joint 70 is attached to the lower end of the vertical shaft 68. The substrate holder 58 of the processing head 60 is connected through the via. The substrate holder 58 is located inside the housing portion 56. The upper end of the vertical shaft 68 is connected to a fixed ring elevating cylinder 74 fixed to the moving frame 54 via a bearing 72 and a bracket. Accordingly, the vertical shaft 68 moves up and down independently of the output shaft 64 in accordance with the operation of the lifting cylinder 74.

  The fixed frame 52 is attached with a linear guide 76 that extends in the vertical direction and serves as a guide for raising and lowering the moving frame 54, and the moving frame 54 is moved in accordance with the operation of the head elevating cylinder (not shown). 76 is used as a guide.

  A substrate insertion window 56 a for inserting the substrate W is provided in the peripheral wall of the housing portion 56 of the processing head 60. Further, as shown in FIGS. 20 and 21, a peripheral portion is sandwiched between a main frame 80 made of PEEK and a guide frame 82 made of polyethylene, for example, at the lower portion of the housing portion 56 of the processing head 60. A seal ring 84a is disposed. This seal ring 84a is in contact with the peripheral edge of the lower surface of the substrate W to seal it.

  On the other hand, a substrate fixing ring 86 is fixed to the peripheral edge of the lower surface of the substrate holder 58, and a cylindrical pusher 90 is connected to the substrate via the elastic force of a spring 88 disposed inside the substrate fixing ring 86 of the substrate holder 58. It protrudes downward from the lower surface of the fixing ring 86. Further, a bendable cylindrical bellows plate 92 made of, for example, Teflon (registered trademark) is hermetically sealed between the upper surface of the substrate holder 58 and the upper wall portion of the housing portion 56. Yes.

  Accordingly, the substrate W is inserted into the housing portion 56 from the substrate insertion window 56a with the substrate holder 58 raised. Then, the substrate W is guided by a tapered surface 82a provided on the inner peripheral surface of the guide frame 82, positioned, and placed at a predetermined position on the upper surface of the seal ring 84a. In this state, the substrate holder 58 is lowered, and the pusher 90 of the substrate fixing ring 86 is brought into contact with the upper surface of the substrate W. Then, by further lowering the substrate holder 58, the substrate W is pressed downward by the elastic force of the spring 88, and is thereby pressed against the peripheral portion of the surface (lower surface) of the substrate W by the seal ring 84a, thereby sealing it. However, the substrate W is sandwiched and held between the housing portion 56 and the substrate holder 58.

  When the head rotating servomotor 62 is driven in a state where the substrate W is held by the substrate holder 58 as described above, the output shaft 64 and the vertical shaft 68 inserted into the output shaft 64 are connected to the spline 66. Accordingly, the housing portion 56 and the substrate holder 58 are also rotated integrally.

  A processing tank 100 having an outer tank 100a and an inner tank 100b, which is located below the processing head 60 and opens upward having an inner diameter slightly larger than the outer diameter of the processing head 60, is provided. A pair of legs 104 attached to the lid 102 are rotatably supported on the outer periphery of the processing bath 100. Further, a crank 106 is integrally connected to the leg 104, and a free end of the crank 106 is rotatably connected to a rod 110 of the lid moving cylinder 108. Accordingly, the lid 102 is configured to move between a processing position that covers the upper end opening of the processing tank 100 and a side retracted position in accordance with the operation of the lid moving cylinder 108. . The surface (upper surface) of the lid 102 is provided with a nozzle plate 112 having a plurality of injection nozzles 112a for injecting electrolytic ion water having reducing power, for example, outward (upward) as described below. Yes.

  Furthermore, as shown in FIG. 22, a plurality of injection nozzles 124 a for injecting the chemical liquid supplied from the chemical liquid tank 120 in accordance with the driving of the chemical liquid pump 122 upward are provided in the inner tank 100 b of the processing tank 100. The nozzle plate 124 having the nozzles 124a is arranged in a state where the spray nozzles 124a are more evenly distributed over the entire cross section of the inner tank 100b. A drain pipe 126 for discharging a chemical solution (drainage) to the outside is connected to the bottom surface of the inner tank 100b. A three-way valve 128 is provided in the middle of the drain pipe 126, and this chemical solution (drainage) is supplied to the chemical solution as needed via a return pipe 130 connected to one outlet port of the three-way valve 128. It can be returned to the tank 120 and reused. Furthermore, in this example, the nozzle plate 112 provided on the surface (upper surface) of the lid 102 is connected to a rinse liquid supply source 132 that supplies a rinse liquid such as pure water. A drain pipe 127 is also connected to the bottom surface of the outer tub 100a.

  Thereby, the processing head 60 holding the substrate is lowered to cover the upper end opening of the processing tank 100 so as to be closed by the processing head 60, and in this state, the nozzle plate disposed inside the inner tank 100 b of the processing tank 100. By spraying the chemical liquid from the spray nozzle 124a toward the substrate W, the chemical liquid is uniformly sprayed over the entire lower surface (processing surface) of the substrate W, and the chemical liquid is prevented from scattering to the outside. Can be discharged from the drain pipe 126 to the outside. Furthermore, the processing head 60 is raised, and the nozzle plate 112 disposed on the upper surface of the lid body 102 is directed toward the substrate W held by the processing head 60 in a state where the upper end opening of the processing tank 100 is closed by the lid body 102. By rinsing the rinsing liquid from the spray nozzle 112a, the chemical liquid remaining on the substrate surface is rinsed (cleaning process), and this rinsing liquid passes between the outer tank 100a and the inner tank 100b and passes through the drain pipe 127. Therefore, it is prevented from flowing into the inner tank 100b, so that the rinse liquid is not mixed with the chemical liquid.

  According to the pretreatment device 28, as shown in FIG. 16, the substrate W is inserted and held in the state where the processing head 60 is raised, and then, as shown in FIG. 60 is moved down to a position that covers the upper end opening of the processing bath 100. Then, by rotating the processing head 60 and rotating the substrate W held by the processing head 60, the chemical liquid is sprayed toward the substrate W from the spray nozzle 124 a of the nozzle plate 124 disposed inside the processing tank 100. The chemical liquid is sprayed uniformly over the entire surface of the substrate W. Further, the processing head 60 is raised and stopped at a predetermined position, and the lid 102 that has been in the retracted position is moved to a position that covers the upper end opening of the processing bath 100 as shown in FIG. In this state, the rinsing liquid is ejected from the ejection nozzles 112 a of the nozzle plate 112 disposed on the upper surface of the lid 102 toward the substrate W held and rotated by the processing head 60. Thereby, the process by the chemical | medical solution of the board | substrate W and the rinse process by a rinse liquid can be performed, keeping two liquids not mixing.

  In addition, by adjusting the lowered position of the processing head 60 and adjusting the distance between the substrate W held by the processing head 60 and the nozzle plate 124, the chemical solution injected from the injection nozzle 124 a of the nozzle plate 124 is transferred to the substrate W. And the injection pressure can be arbitrarily adjusted. Here, when a pretreatment liquid such as a chemical solution is circulated and used, the active ingredient is reduced along with the treatment, and the pretreatment liquid (chemical solution) is brought out by adhering to the substrate. It is preferable to arrange a pretreatment liquid management unit (not shown) for analyzing the above and adding the shortage. Specifically, since the chemical solution used for cleaning is mainly acid or alkali, for example, the pH is measured, and the decrease is replenished from the difference from a predetermined value, and the liquid level gauge provided in the chemical solution storage tank is used. The amount of decrease can be replenished. As for the catalyst solution, for example, in the case of an acidic palladium solution, the amount of acid can be measured by pH, the amount of palladium can be measured by titration or turbidimetry, and the amount of decrease can be replenished in the same manner. .

  An electroless plating apparatus 30 is shown in FIGS. The electroless plating apparatus 30 is for forming the protective film 9 shown in FIG. 4D, and is disposed on the plating tank 200 (see FIGS. 27 and 29) and above the plating tank 200. A substrate head 204 for holding W in a detachable manner is provided.

  As shown in detail in FIG. 23, the substrate head 204 includes a housing portion 230 and a head portion 232, and the head portion 232 mainly includes a suction head 234 and a substrate receiver 236 that surrounds the periphery of the suction head 234. It is configured. The housing portion 230 houses a substrate rotation motor 238 and a substrate receiving drive cylinder 240. The upper end of the output shaft (hollow shaft) 242 of the substrate rotation motor 238 is at the rotary joint 244, and the lower end is at the lower end. The rods of the substrate receiving drive cylinder 240 are connected to the suction head 234 of the head unit 232, respectively, and are connected to the substrate receiver 236 of the head unit 232. Further, a stopper 246 that mechanically restricts the rise of the substrate receiver 236 is provided inside the housing portion 230.

  Here, a similar spline structure is employed between the suction head 234 and the substrate receiver 236, and the substrate receiver 236 moves up and down relatively with respect to the suction head 234 in accordance with the operation of the substrate receiver driving cylinder 240. When the output shaft 242 is rotated by driving the substrate rotating motor 238, the suction head 234 and the substrate receiver 236 are integrally rotated with the rotation of the output shaft 242.

As shown in detail in FIG. 24 to FIG. 26, an adsorption ring 250 that adsorbs and holds the substrate W with the lower surface serving as a sealing surface is attached to the periphery of the lower surface of the adsorption head 234 via a pressing ring 251. A concave portion 250 a provided continuously in the circumferential direction on the lower surface of the nozzle and a vacuum line 252 extending in the suction head 234 communicate with each other through a communication hole 250 b provided in the suction ring 250. Thus, the substrate W is sucked and held by evacuating the concave portion 250a. Thus, by holding the substrate W by evacuating it with a small width (in the radial direction), By minimizing the influence (deflection, etc.) on the substrate W due to the vacuum, and immersing the adsorption ring 250 in the plating solution (processing solution), not only the surface (lower surface) but also the edge of the substrate W It becomes possible to immerse in the plating solution. The substrate W is released by supplying N ₂ to the vacuum line 252.

  On the other hand, the substrate receiver 236 is formed in a bottomed cylindrical shape that opens downward, a peripheral wall is provided with a substrate insertion window 236a for inserting the substrate W therein, and a disc protruding inward at the lower end. A claw portion 254 is provided. Further, a projection piece 256 having a taper surface 256 a serving as a guide for the substrate W on the inner peripheral surface is provided on the upper portion of the claw portion 254.

  Accordingly, as shown in FIG. 24, the substrate W is inserted into the substrate receiver 236 from the substrate insertion window 236a with the substrate receiver 236 lowered. Then, the substrate W is guided by the tapered surface 256 a of the protrusion piece 256, positioned, and placed and held at a predetermined position on the upper surface of the claw portion 254. In this state, the substrate receiver 236 is raised and the upper surface of the substrate W placed and held on the claw portion 254 of the substrate receiver 236 is brought into contact with the suction ring 250 of the suction head 234 as shown in FIG. Next, the concave portion 250 a of the suction ring 250 is evacuated through the vacuum line 252, and the substrate W is sucked and held while the peripheral portion of the upper surface of the substrate W is sealed to the lower surface of the suction ring 250. Then, when performing the plating process, as shown in FIG. 26, the substrate receiver 236 is lowered by several millimeters, and the substrate W is separated from the claw portion 254 and is brought into a state of being sucked and held only by the suction ring 250. Thereby, it can prevent that the peripheral part of the surface (lower surface) of the board | substrate W stops being plated by presence of the nail | claw part 254. FIG.

  FIG. 27 shows details of the plating tank 200. The plating tank 200 is connected to a plating solution supply pipe 308 (see FIG. 29) at the bottom, and a plating solution recovery groove 260 is provided in the peripheral wall portion. Two rectifying plates 262 and 264 that stabilize the flow of the plating solution flowing upward are disposed inside the plating bath 200, and further, the plating solution introduced into the plating bath 200 is provided at the bottom. A temperature measuring device 266 for measuring the liquid temperature is installed. Moreover, the pH is 6-7 in the inside of the plating tank 200 which is located slightly above the liquid surface of the plating solution held in the plating tank 200 on the outer peripheral surface of the peripheral wall of the plating tank 200 and slightly obliquely upward in the diameter direction. 5 is provided with an injection nozzle 268 for injecting a stop liquid composed of a neutral liquid, for example, pure water. Thus, after the plating is finished, the substrate W held by the head portion 232 is pulled up slightly above the liquid surface of the plating solution to temporarily stop, and in this state, pure water (stopping liquid) is directed from the spray nozzle 268 toward the substrate W. The substrate W is immediately cooled by spraying, so that the plating can be prevented from proceeding with the plating solution remaining on the substrate W.

  Further, the upper end opening of the plating tank 200 is closed to prevent unnecessary evaporation of the plating solution from the plating tank 200 when the plating process such as idling is not performed. A plating tank cover 270 is installed so as to be freely opened and closed.

  As shown in FIG. 29, the plating tank 200 extends from the plating solution storage tank 302 at the bottom, and is connected to a plating solution supply pipe 308 having a plating solution supply pump 304 and a three-way valve 306 interposed therebetween. Thus, during the plating process, the plating solution is supplied into the plating tank 200 from the bottom, and the overflowing plating solution is recovered from the plating solution recovery groove 260 to the plating solution storage tank 302, so that the plating solution is recovered. It can be circulated. A plating solution return pipe 312 that returns to the plating solution storage tank 302 is connected to one outlet port of the three-way valve 306. Thus, the plating solution can be circulated even when the plating is on standby, thereby constituting a plating solution circulation system. In this way, by constantly circulating the plating solution in the plating solution storage tank 302 via the plating solution circulation system, the rate of decrease in the concentration of the plating solution is reduced as compared with the case where the plating solution is simply stored, The number of substrates W that can be processed can be increased.

  In particular, in this example, by controlling the plating solution supply pump 304, it is possible to individually set the flow rate of the plating solution that circulates during plating standby and plating processing. That is, the circulation flow rate of the plating solution at the time of plating standby is set to 2 to 20 L / min, for example, and the circulation flow rate of the plating solution at the time of plating treatment is set to 0 to 10 L / min, for example. This ensures a large circulating flow rate of plating solution during plating standby, keeps the temperature of the plating bath in the cell constant, and lowers the circulating flow rate of plating solution during plating to achieve a more uniform film thickness. A protective film (plating film) can be formed.

  A temperature measuring device 266 provided near the bottom of the plating tank 200 measures the temperature of the plating solution introduced into the plating tank 200, and based on this measurement result, the heater 316 and the flow meter 318 described below. To control.

  In other words, in this example, water heated by using a separate heater 316 and passed through the flow meter 318 is used as a heat medium, and the heat exchanger 320 is installed in the plating solution in the plating solution storage tank 302. A heating device 322 for indirectly heating the plating solution, and a stirring pump 324 for circulating and stirring the plating solution in the plating solution storage tank 302. This is because, in the case of plating, the plating solution may be used at a high temperature (about 80 ° C.), and this is to cope with this. According to this method, compared to the in-line heating method, It is possible to prevent unnecessary substances from being mixed into the delicate plating solution.

  FIG. 28 shows details of the cleaning tank 202 attached to the side of the plating tank 200. A plurality of injection nozzles 280 for injecting a rinse liquid such as pure water upward are attached to the nozzle plate 282 at the bottom of the cleaning tank 202, and the nozzle plate 282 is arranged at the upper end of the nozzle vertical axis 284. It is connected to. Further, the nozzle vertical shaft 284 moves up and down by changing the screwing position of the nozzle position adjusting screw 287 and the nut 288 screwed to the screw 287, whereby the jet nozzle 280 and the jet nozzle 280 are moved. The distance from the substrate W arranged above can be adjusted optimally.

  Further, a cleaning liquid such as pure water is sprayed into the cleaning tank 202 at a position slightly above the diametrical direction, slightly above the spray nozzle 280 on the outer peripheral surface of the peripheral wall of the cleaning tank 202, and the head of the substrate head 204. A head cleaning nozzle 286 for spraying the cleaning liquid on at least a portion in contact with the plating solution of the part 232 is installed.

  In this cleaning tank 202, the substrate W held by the head portion 232 of the substrate head 204 is disposed at a predetermined position in the cleaning tank 202, and a cleaning liquid (rinsing liquid) such as pure water is sprayed from the spray nozzle 280. Then, the substrate W is cleaned (rinsed). At this time, a cleaning liquid such as pure water is simultaneously ejected from the head cleaning nozzle 286, and at least a portion of the head portion 232 of the substrate head 204 that is in contact with the plating solution is By washing with the cleaning solution, it is possible to prevent the deposits from accumulating in the portion immersed in the plating solution.

In the electroless plating apparatus 30, the substrate W is adsorbed and held by the head portion 232 of the substrate head 204 at the position where the substrate head 204 is raised, and the plating solution in the plating tank 200 is circulated. Let me.
When performing the plating process, the plating tank cover 270 of the plating tank 200 is opened, the substrate head 204 is lowered while rotating, and the substrate W held by the head portion 232 is immersed in the plating solution in the plating tank 200.

  Then, after the substrate W is immersed in the plating solution for a predetermined time, the substrate head 204 is raised, the substrate W is pulled up from the plating solution in the plating tank 200, and if necessary, the substrate W is applied to the substrate W as described above. The substrate W is immediately cooled by spraying pure water (stop liquid) from the spray nozzle 268 toward the substrate, and the substrate head 204 is further lifted to lift the substrate W to a position above the plating tank 200 to rotate the substrate head 204. Stop.

  Next, the substrate head 204 is moved to a position directly above the cleaning tank 202 while the substrate W is sucked and held by the head portion 232 of the substrate head 204. Then, while rotating the substrate head 204, the substrate head 204 is lowered to a predetermined position in the cleaning tank 202, and a cleaning liquid (rinsing liquid) such as pure water is sprayed from the spray nozzle 280 to clean (rinse) the substrate W. A cleaning liquid such as pure water is ejected from the cleaning nozzle 286, and at least a portion of the head portion 232 of the substrate head 204 that comes into contact with the plating solution is cleaned with the cleaning liquid.

  After the cleaning of the substrate W is completed, the rotation of the substrate head 204 is stopped, the substrate head 204 is raised, the substrate W is pulled up to a position above the cleaning tank 202, and the substrate head 204 is further transferred to the transfer robot 16. The substrate W is transferred to the transfer robot 16 and transferred to the next process.

  As shown in FIG. 29, the electroless plating apparatus 30 measures the amount of the plating solution held by the electroless plating apparatus 30, and uses, for example, a plating solution by absorptiometry, titration, electrochemical measurement, or the like. The plating solution management unit 330 is provided for analyzing the composition of the above and replenishing the insufficient components in the plating solution. Then, these analysis results are signal-processed, and the deficient components in the plating solution are supplied from a supply tank (not shown) to the plating solution storage tank 302 using a metering pump or the like to manage the amount and composition of the plating solution. Thus, thin film plating can be realized with good reproducibility.

  The plating solution management unit 330 has a dissolved oxygen concentration meter 332 that measures the dissolved oxygen in the plating solution held by the electroless plating apparatus 30 by, for example, an electrochemical method. According to the instruction, the dissolved oxygen concentration in the plating solution can be controlled to be constant, for example, by degassing, nitrogen blowing or other methods. Thus, the plating reaction can be realized with good reproducibility by controlling the dissolved oxygen concentration in the plating solution to be constant.

  If the plating solution is repeatedly used, certain components accumulate due to bringing in from the outside or decomposition of itself, which may lead to reproducibility of plating and deterioration of film quality. By adding a mechanism for selectively removing such specific components, it is possible to extend the liquid life and improve reproducibility.

  FIG. 30 shows an example of a polishing apparatus (CMP apparatus) 32. The polishing apparatus 32 includes a polishing table 822 that forms a polishing surface by attaching a polishing cloth (polishing pad) 820 to the upper surface, and a top ring 824 that holds the substrate W with the surface to be polished facing the polishing table 822. I have. Then, the polishing table 822 and the top ring 824 are each rotated, and the polishing table 822 is supplied to the polishing table 822 with a constant pressure by the top ring 824 while supplying the polishing liquid from the polishing liquid nozzle 826 installed above the polishing table 822. By pressing against the polishing cloth 820, the surface of the substrate W is polished. In addition, you may use what employ | adopted the fixed abrasive system which put the abrasive grain beforehand as a polishing pad.

  When the polishing operation is continued using such a CMP apparatus 32, the polishing force of the polishing surface of the polishing pad 820 is reduced. In order to recover this polishing force, a dresser 828 is provided, and the substrate to be polished by this dresser 828 is provided. The dressing (dressing) of the polishing pad 820 is performed when W is replaced. In this dressing process, while pressing the dressing surface (dressing member) of the dresser 828 against the polishing cloth 820 of the polishing table 822, by rotating them, the abrasive fluid and cutting waste adhering to the polishing surface are removed, The polished surface is flattened and sharpened to regenerate the polished surface. Further, a monitor for monitoring the surface state of the substrate may be attached to the polishing table 822, and the end point of polishing may be detected in-situ, and the substrate may be detected in-situ. A monitor for inspecting the finished state of the above may be attached.

Next, a series of processes for forming the copper wiring on the substrate on which the seed layer 6 is formed shown in FIG. 4A by the substrate processing apparatus configured as described above will be described with further reference to FIG.
First, the substrates W having the seed layer 6 formed on the surface are taken out one by one from the transport box 10 and loaded into the load / unload station 14. Then, the substrate W carried into the loading / unloading station 14 is transferred to the plating apparatus 18 by inverting the substrate as required, and the plating apparatus 18 uses the substrate as shown in FIG. A copper layer 7 is deposited on the surface of W to embed copper. At this time, plating is performed by constant voltage control, and monitoring is performed with a current value during plating, and the plating is stopped by stopping energization with a certain time difference from the time when the current value becomes constant, or by constant current control. Plating is performed and the voltage value is monitored during the plating. By stopping the energization and stopping the plating with a certain time difference from the time when this voltage value becomes constant, the target is obtained without adding extra plating. A plating film having a flat surface can be obtained.

  Then, the substrate on which the copper layer 7 is formed is transported to the cleaning / drying device 20 by the transport robot 16, and the substrate W is cleaned with pure water and spin dried, or the plating device 18 has a spin drying function. If it is provided, the substrate W is spin-dried (liquid drained) by the plating device 18, and the dried substrate is transported to the bevel etching / back surface cleaning device 22.

In this bevel etching / back surface cleaning apparatus 22, unnecessary copper adhering to the bevel (edge) portion of the substrate W is removed by etching, and at the same time, the back surface of the substrate is cleaned with pure water or the like. When the robot 16 transports the substrate W to the cleaning / drying device 20 and cleans the substrate W with pure water to spin dry, or the bevel etching / back surface cleaning device 22 has a spin drying function, The substrate W is spin-dried by the bevel etching / back surface cleaning device 22, and the dried substrate is transported to the heat treatment device 26 by the transport robot 16.
The heat treatment apparatus 26 performs heat treatment (annealing) of the substrate W. Then, the substrate W after the heat treatment is transferred to the polishing apparatus 32 by the transfer robot 16.

  With this polishing apparatus 32, as shown in FIG. 4C, unnecessary copper layer 7 and seed layer 6 deposited on the surface of the substrate W are polished and removed, and the surface of the substrate W is flattened. At this time, for example, the film thickness and the finish of the substrate are inspected by a monitor, and when the end point is detected by this monitor, the polishing is finished. Then, the polished substrate W is transported to the cleaning / drying device 20 by the transport robot 16, the substrate surface is cleaned with a chemical solution by the cleaning / drying device 20, and further washed with pure water (rinse), and then rotated at high speed. Spin dry. Then, the substrate W after the spin drying is transferred to the pretreatment apparatus 28 by the transfer robot 16.

  In this pretreatment device 28, for example, at least one pretreatment for plating such as adhesion of a Pd catalyst to the substrate surface or removal of an oxide film adhering to the exposed surface of the substrate is performed. Then, the substrate after the plating pretreatment is transferred to the cleaning / drying apparatus 20 by the transfer robot 16 as described above, and the substrate W is cleaned with pure water and spin dried, or the preprocessing apparatus 28 is used. If the substrate is provided with a spin drying function, the substrate W is spin-dried (liquid drained) by the pretreatment device 28 and the dried substrate is transported to the electroless plating device 30 by the transport robot 16. .

  With this electroless plating apparatus 30, as shown in FIG. 4D, for example, electroless Co—WP plating is applied to the exposed surface of the wiring 8, and the exposed surface to the outside of the wiring 8 is coated with Co. A protective film (plating film) 9 made of a WP alloy film is selectively formed to protect the wiring 8. The thickness of the protective film 9 is about 0.1 to 500 nm, preferably about 1 to 200 nm, and more preferably about 10 to 100 nm. At this time, for example, the film thickness of the protective film 9 is monitored, and when the film thickness reaches a predetermined value, that is, when an end point is detected, the electroless plating is terminated.

Then, after the electroless plating is completed, the substrate is transported to the cleaning / drying device 20 by the transport robot 16, and the substrate surface is cleaned with a chemical solution by the cleaning / drying device 20, and further washed with pure water (rinse). Spin at high speed to spin dry. Then, the substrate W after the spin drying is returned into the transport box 10 by the transport robot 16 via the load / unload station 14.
In this example, copper is used as the wiring material, but copper alloy, silver, silver alloy, or the like may be used in addition to this copper.

In flattening plating, it is a graph which shows the relationship between the voltage value at the time of plating by current constant control, and time. In flattening plating, it is a graph which shows the relationship between the electric current value at the time of plating by voltage constant control, and time. It is sectional drawing which shows the state at the time of the metal-plating start at the time of plating start, and the end of metal plating. It is a figure which shows the example of wiring formation in a semiconductor device in order of a process. It is a top view of the substrate processing apparatus provided with the plating apparatus used for the plating method of this invention. It is a schematic diagram which shows the principal part of the plating apparatus shown in FIG. Is a diagram showing an overview of the porous body (the lower pad) and the drive mechanism for relative movement with the a substrate held by the substrate holder in the plating apparatus according to an embodiment of the present invention. It is a figure which shows the relationship at the time of supplying an electric current or a voltage to one at the time of a contact or non-contact, repeating contact and non-contact with the lower layer pad (porous body) and the surface (to-be-plated surface) of a board | substrate. The main part of another because Kki apparatus used in the plating method of the present invention is a schematic diagram showing. It is a systematic diagram which shows an example of a plating solution management supply system. It is a vertical front view which shows an example of the washing | cleaning / drying apparatus shown in FIG. Similarly, it is a plan view. It is the schematic which shows an example of the bevel etching and back surface cleaning apparatus shown in FIG. It is a vertical front view which shows an example of the heat processing apparatus shown in FIG. Similarly, it is a cross-sectional view. It is a front view at the time of board | substrate delivery of the pre-processing apparatus shown in FIG. Similarly, it is a front view at the time of a chemical | medical solution process. Similarly, it is a front view at the time of rinsing. Similarly, it is sectional drawing which shows the processing head at the time of board | substrate delivery. Similarly, it is the A section enlarged view of FIG. Similarly, it is FIG. 20 equivalent figure at the time of board | substrate fixation. Similarly, it is a system diagram. It is sectional drawing which shows the board | substrate head at the time of board | substrate delivery of the electroless-plating apparatus shown in FIG. Similarly, it is the B section enlarged view of FIG. FIG. 25 is a view corresponding to FIG. 24 showing the substrate head when the substrate is fixed. FIG. 25 is also a view corresponding to FIG. 24 showing the substrate head during the plating process. Similarly, it is a partially cut front view showing the plating tank when the plating tank cover is closed. Similarly, it is sectional drawing which shows a washing tank. Similarly, it is a system diagram. It is a schematic diagram which shows an example of the grinding | polishing apparatus shown in FIG. FIG. 6 is a process flowchart in the substrate processing apparatus shown in FIG. 5.

Explanation of symbols

3 Micropores (microscopic recesses)
4 Wiring groove (fine recess)
7 Copper layer 8 Wiring 9 Protective film 10 Transport box 18 Plating device 20 Cleaning / drying device 22 Bevel etching / back surface cleaning device 26 Heat treatment device 28 Pretreatment device 30 Electroless plating device 32 Polishing device 56 Housing portion 58 Substrate holder 60 Processing head DESCRIPTION OF SYMBOLS 100 Treatment tank 102 Cover body 120 Chemical solution tank 132 Rinse solution supply source 200 Plating tank 202 Cleaning tank 204 Substrate head 230 Housing part 232 Head part 234 Adsorption head 320 Heat exchanger 322 Heating device 324 Stirring pump 330 Plating solution management unit 332 Dissolved oxygen Densitometer 422 Substrate stage 428 Cleaning cup 434 Cleaning sponge 436 Turning arm 500 Swing arm 502 Electrode head 504 Substrate holding portion 506 Cathode portion 512 Cathode electrode 514 Sealing material 520 Housing 524 Rotating body 5 6 Anode 528 Porous body 530 Anode chamber 532 Plating solution impregnated material 534 Porous pad 534a Lower layer pad 534b Upper layer pad 544 Plating solution introduction tube 550 Power supply 552 Constant voltage control unit 554 Current value monitor unit 556 Constant current control unit 558 Voltage value monitor Unit 600 plating solution tray 604 reservoir 608 plating solution adjustment tank 610 temperature controller 612 plating solution analysis unit 820 polishing cloth 822 polishing table 824 top ring 826 abrasive solution nozzle 828 dresser 922 substrate stage 924 center nozzle 926 edge nozzle 928 back nozzle 1002 chamber 1004 Hot plate 1006 Cool plate

Claims (9)

In a plating apparatus that forms a plating film with a flat surface while plating a plated surface of a substrate having fine concave portions for wiring and embedding the plating film in the fine concave portions,
A substrate holder for holding the substrate;
A seal member that abuts a peripheral portion of the surface of the substrate held by the substrate holding portion and seals the peripheral portion in a water-tight manner, and a cathode portion that includes a cathode electrode that contacts and energizes the substrate;
An anode disposed so as to be movable up and down facing the surface to be plated of the substrate;
A porous body made of a water retaining material disposed between the anode and the surface to be plated of the substrate;
A constant voltage control unit for controlling a voltage applied between the cathode electrode and the anode to be constant;
By feeding back the monitored output signal value of the current flowing between the anode and the cathode electrode to the constant voltage control unit, the energization between the anode and the cathode when the current value becomes constant a current value monitoring unit stopping,
A plating apparatus, comprising: a drive mechanism that vibrates at least one of the porous body and the substrate such that the porous body and a surface to be plated of the substrate repeat contact and non-contact . In a plating apparatus that forms a plating film with a flat surface while plating a plated surface of a substrate having fine concave portions for wiring and embedding the plating film in the fine concave portions,
A substrate holder for holding the substrate;
A seal member that abuts a peripheral portion of the surface of the substrate held by the substrate holding portion and seals the peripheral portion in a water-tight manner, and a cathode portion that includes a cathode electrode that contacts and energizes the substrate;
An anode disposed so as to be movable up and down facing the surface to be plated of the substrate;
A porous body made of a water retaining material disposed between the anode and the surface to be plated of the substrate;
A constant current control unit for controlling a current flowing between the cathode electrode and the anode to be constant;
By feeding back the monitored output signal to the constant current control unit the voltage value between the anode and the cathode electrode, the conduction between the cathode electrode and the anode when the current value becomes constant A voltage value monitoring unit to be stopped ;
A plating apparatus, comprising: a drive mechanism that vibrates at least one of the porous body and the substrate such that the porous body and a surface to be plated of the substrate repeat contact and non-contact .   The plating apparatus according to claim 1, further comprising a pressing mechanism that presses the porous body onto a surface to be plated of the substrate held by the substrate holding portion with an arbitrary force. In a plating method for forming a plating film having a flat surface while plating a plated surface of a substrate having fine concave portions for wiring and embedding the plating film in the fine concave portions,
A porous body made of a water-retaining material is interposed between the substrate and the anode,
Fill the plating solution between the surface to be plated of the substrate and the anode,
While repeating contact and non-contact between the porous body and the surface to be plated of the substrate, one of the porous body and the surface to be plated of the substrate is contacted or non-contacted , While performing plating by applying a constant voltage between the anode and the anode, the current value flowing between the surface to be plated of the substrate and the anode is detected,
A plating method characterized by stopping energization between the surface to be plated of the substrate and the anode with a certain time difference from the time when the current value becomes constant. In a plating method for forming a plating film having a flat surface while plating a plated surface of a substrate having fine concave portions for wiring and embedding the plating film in the fine concave portions,
A porous body made of a water-retaining material is interposed between the substrate and the anode,
Fill the plating solution between the surface to be plated of the substrate and the anode,
While repeating contact and non-contact between the porous body and the surface to be plated of the substrate, the contact between the surface to be plated and the anode of the substrate between the porous body and the surface to be plated is non-contact. While plating by applying a different constant voltage at the time of contact, the current value flowing between the surface to be plated of the substrate and the anode is detected,
A plating method characterized by stopping energization between the surface to be plated of the substrate and the anode with a certain time difference from the time when the current value becomes constant . Wherein after the porous body was still in contact with the plated surface of the substrate, claim and performing plating by applying a constant voltage between the anode and the surface to be plated of the substrate 4 Or the plating method of 5 . In a plating method for forming a plating film having a flat surface while plating a plated surface of a substrate having fine concave portions for wiring and embedding the plating film in the fine concave portions,
A porous body made of a water-retaining material is interposed between the substrate and the anode,
Fill the plating solution between the surface to be plated of the substrate and the anode,
While repeating contact and non-contact between the porous body and the surface to be plated of the substrate, one of the porous body and the surface to be plated of the substrate is contacted or non-contacted , While performing plating by passing a constant current between the anode and the anode, the voltage value between the surface to be plated of the substrate and the anode is detected,
A plating method characterized by stopping energization between the surface to be plated of the substrate and the anode with a certain time difference from the time when the voltage value becomes constant. In a plating method for forming a plating film having a flat surface while plating a plated surface of a substrate having a fine recess for wiring and embedding the plating film in the fine recess,
A porous body made of a water-retaining material is interposed between the substrate and the anode,
Fill a plating solution between the surface to be plated of the substrate and the anode,
While repeating contact and non-contact between the porous body and the surface to be plated of the substrate, between the surface to be plated of the substrate and the anode, contact between the porous body and the surface to be plated of the substrate is non-contact While performing plating by flowing different constant currents at the time of contact, the voltage value between the surface to be plated of the substrate and the anode is detected,
A plating method characterized by stopping energization between the surface to be plated of the substrate and the anode with a certain time difference from the time when the voltage value becomes constant. Wherein after the porous body was still in contact with the plated surface of the substrate, according to claim 7 or and performing plating by passing a constant current between the anode and the surface to be plated of the substrate 8. The plating method according to 8 .

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