KR20110025211A - 술포늄 유도체 및 잠재성 산으로서의 그의 용도 - Google Patents

술포늄 유도체 및 잠재성 산으로서의 그의 용도 Download PDF

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Publication number
KR20110025211A
KR20110025211A KR1020117000725A KR20117000725A KR20110025211A KR 20110025211 A KR20110025211 A KR 20110025211A KR 1020117000725 A KR1020117000725 A KR 1020117000725A KR 20117000725 A KR20117000725 A KR 20117000725A KR 20110025211 A KR20110025211 A KR 20110025211A
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KR
South Korea
Prior art keywords
alkyl
interrupted
formula
compound
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020117000725A
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English (en)
Korean (ko)
Inventor
유이치 니시마에
도시카게 아사쿠라
히토시 야마토
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20110025211A publication Critical patent/KR20110025211A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D339/00—Heterocyclic compounds containing rings having two sulfur atoms as the only ring hetero atoms
    • C07D339/08—Six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D327/00—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
    • C07D327/02—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms one oxygen atom and one sulfur atom
    • C07D327/06—Six-membered rings
    • C07D327/08—[b,e]-condensed with two six-membered carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
KR1020117000725A 2008-06-12 2009-06-02 술포늄 유도체 및 잠재성 산으로서의 그의 용도 Withdrawn KR20110025211A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08158090 2008-06-12
EP08158090.4 2008-06-12

Publications (1)

Publication Number Publication Date
KR20110025211A true KR20110025211A (ko) 2011-03-09

Family

ID=40469989

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000725A Withdrawn KR20110025211A (ko) 2008-06-12 2009-06-02 술포늄 유도체 및 잠재성 산으로서의 그의 용도

Country Status (7)

Country Link
US (1) US20110171569A1 (cg-RX-API-DMAC7.html)
EP (1) EP2288599A1 (cg-RX-API-DMAC7.html)
JP (1) JP2011523971A (cg-RX-API-DMAC7.html)
KR (1) KR20110025211A (cg-RX-API-DMAC7.html)
CN (1) CN102056913A (cg-RX-API-DMAC7.html)
TW (1) TW201004934A (cg-RX-API-DMAC7.html)
WO (1) WO2009150074A1 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5622448B2 (ja) * 2010-06-15 2014-11-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP6002705B2 (ja) * 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
WO2015127459A1 (en) 2014-02-24 2015-08-27 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
KR102475021B1 (ko) 2016-05-13 2022-12-06 도쿄엘렉트론가부시키가이샤 감광 화학물질 또는 감광 화학 증폭형 레지스트의 사용에 의한 임계 치수 제어
KR102177192B1 (ko) 2016-05-13 2020-11-10 도쿄엘렉트론가부시키가이샤 광 작용제의 사용에 의한 임계 치수 제어
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
JP2022164585A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2022164586A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
US20230004084A1 (en) * 2021-05-06 2023-01-05 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP7687292B2 (ja) * 2021-07-28 2025-06-03 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541131B2 (en) * 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
EP1902019B1 (en) * 2005-07-01 2010-07-07 Basf Se Sulphonium salt initiators
JP5313873B2 (ja) * 2006-04-13 2013-10-09 チバ ホールディング インコーポレーテッド スルホニウム塩開始剤
CN101473268A (zh) * 2006-06-20 2009-07-01 西巴控股有限公司 肟磺酸酯和其作为潜伏酸的用途
JP5290183B2 (ja) * 2006-10-04 2013-09-18 チバ ホールディング インコーポレーテッド スルホニウム塩光開始剤
JP5538229B2 (ja) * 2007-10-10 2014-07-02 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
WO2009047105A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
JP5473921B2 (ja) * 2007-10-10 2014-04-16 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤

Also Published As

Publication number Publication date
US20110171569A1 (en) 2011-07-14
TW201004934A (en) 2010-02-01
CN102056913A (zh) 2011-05-11
JP2011523971A (ja) 2011-08-25
WO2009150074A1 (en) 2009-12-17
EP2288599A1 (en) 2011-03-02

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110111

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid