KR20110025010A

KR20110025010A - Vertical probe beam for a probe card

Info

Publication number: KR20110025010A
Application number: KR1020090086566A
Authority: KR
Inventors: 김순희
Original assignee: 김순희
Priority date: 2009-09-02
Filing date: 2009-09-14
Publication date: 2011-03-09

Abstract

PURPOSE: A vertical probe beam for a probe card is provided to limit an operation direction of a probe beam when the probe beam contacts a semiconductor device, thereby minimizing scrum marks in the semiconductor device. CONSTITUTION: A bonding unit(110) is made of a conductive pillar. The bonding unit is vertically connected to a probe substrate(40). A probe unit(120) is formed on a pillar opposite to the bonding unit. A vertical elastic part(130) is vertically arranged in parallel with the probe substrate. The entire width of the bonding unit, the probe unit, and the vertical elastic part is shorter than the entire length.

Description

Vertical probe beam for probe card {VERTICAL PROBE BEAM FOR A PROBE CARD}

The present invention relates to the shape of a probe beam of a probe card for semiconductor measurement, and more particularly, in the case of contact with a semiconductor device, a vertical elastic portion is formed so as to limit the operation direction of the probe beam only up and down, and in contact with the semiconductor device. A vertical probe beam for a probe card adapted to minimize defects.

In general, a probe beam used in a probe card for measuring a semiconductor device uses a cantilever type probe beam.

As an example, a conventional probe beam 1 is mounted to a probe card 10 as shown in FIG. 1A, which is a conventional interconnect between the printed circuit board 20 and the printed circuit board 20. FIG. A plurality of protrusions are formed on the bottom surface of the probe substrate 40 electrically connected through the 30.

As shown in detail in FIG. 1B, the probe beam 1 protrudes a predetermined length from the junction portion 50 bonded to the probe substrate 40 and has an elastic portion 60 extending in the side length in the middle. At the opposite end of the elastic portion 60, a probe 70 is formed which will come into contact with a semiconductor device (not shown).

The conventional probe beam 1 maintains a constant contact force when the probe unit 70 contacts the semiconductor device and maintains a constant contact force, and when the contact is terminated, the elastic unit allows the probe beam 1 to return to its original state. The 60 is designed in the shape of a cantilever (Cantilevel) to have a constant elastic force.

However, although the conventional probe beam 1 manufactured with such a structure has a desired elastic force due to the intermediate elastic portion 60, sufficient space of the cantilever is required to secure such necessary elastic force.

Therefore, in the current trend of the size of the semiconductor device becoming smaller such as the conventional probe beam 1 is reduced the space required to have a sufficient elastic force, which causes a spatial problem for the measurement of the semiconductor device.

In addition, the probe beam 1 by the cantilever of the conventional structure makes a scratch called a scrub mark on the contact surface of the semiconductor device, which causes a problem that causes a defect of the semiconductor device.

In the past, in the design of the probe card 10, the probe beam 1 used at least Φ80 μm tungsten wire, and when fabricating a cantilever type probe beam car, a typical 6 inch wafer was used. The pad size was 100 ~ 120㎛, maximum 64para, pin force was 2.5g / mil (+-20%) and the rolling amount was ~ 35㎛ / 4mil. In addition, the prior art was manufactured by laminating up to 9 steps in order to implement a pitch of 200㎛ or more.

However, as technology and industry developed gradually, and products became smaller and lighter, many changes occurred in the manufacturing method of the probe card 10 in order to enhance high integration, short delivery time, and competitiveness. Among them, in the fabrication of the probe beam 1, a photolithography technique using a semiconductor process was used, and a small size and light weight were achieved.

In addition, as the manufacturing process of the probe card 10 was changed, the number of inspections naturally increased, and the improvement of the precision resulted in the improvement of the product quality. Nevertheless, in the field of DRAM, more direct integration is still needed to meet the needs of consumers.

To do this, the structure of the probe beam 1 should be manufactured in a vertical type based on the MEMS manufacturing method, and more probe beams should be mounted on the same area to be inspected.

In addition, the conventional probe card 10 contacts the pad of the semiconductor circuit contact with the terminal of the probe card, that is, the probe unit 70 of the probe beam 1 in the process of checking to confirm whether the fabricated semiconductor is normally operated. In this case, the reaction force of the probe beam 1 contacts the pad and presses the pad surface to a predetermined depth and length to leave a trace of contact.

The depth of the contact traces is deeper as the reaction force of the probe beam 1 increases, and the scars over the predetermined depth due to the manufacturing characteristics of the semiconductor short circuits that short-circuit the circuit patterns formed in the previous process. Leads to.

And the length of such a contact trace increases in proportion to the length L1 between the probe tip 72 and the junction 50 of the probe beam 1. That is, when the length L1 between the probe tip 72 and the junction 50 of the probe beam 1 becomes long, the probe tip 72 that is out of the pad cannot exchange electrical signals with the designed semiconductor. There is a characteristic that the semiconductor is poorly processed.

For this reason, there is a need to manage the reaction force and the amount of sliding of the probe beam 1 as a design factor from the design stage. In order to design and inspect a large number of semiconductors in the same area, the shape of the probe beam 1 and the cantilever type horizontal structure have a problem of high directivity.

In addition, the conventional probe beam 1 may cause deformation of the probe beam 1 and breakage of the probe part, which may be generated by the amount of sliding when the probe tip 72 contacts.

As the semiconductor wafer becomes larger and more direct, the reaction force applied to the probe beam 1 also decreases while using the probe card 10 equipped with many conventional probe beams 1, and the reaction force generated by increasing the number of pins. In order to solve the increase of, the probe beam 1 should include an energy absorbing structure capable of dissipating and extinguishing external force from the outside.

In addition, the surface area of the probe beam 1, which is accompanied by miniaturization and high directivity of the product, requires verticalization, and it is required to increase the contact area in order to prevent breakage of the probe portion of the probe beam 1. .

The present invention has been proposed to solve the above problems, by minimizing the size of the scrub mark by connecting the probe and the junction while removing the cantilever elastic portion extending to the side, the semiconductor device by narrowing the gap between the probe and the junction It is an object of the present invention to provide an improved vertical probe beam for a probe card so as to optimally cope with a tendency to decrease the size of.

In order to achieve the above object, the present invention provides a probe beam structure for a probe card for measuring a semiconductor device, comprising: a junction portion made of a pillar of a conductor material and connected in a vertical direction of the probe card; A probe formed in a column opposite the junction to contact the semiconductor device; And a plurality of bending pillars formed by bending overlapping pillars of the conductor material side by side between the junction and the probe portion, and the bending pillars are vertical elastic portions disposed parallel to and perpendicular to the probe card. The total width of the junction part, the probe part and the vertical elastic part with respect to the vertical direction of the probe card is shorter than the vertical length, so that the probe card has a vertical structure.

In order to achieve the above object, the present invention provides a probe beam structure for a probe card for measuring a semiconductor device, comprising: a plurality of joints made of a pillar of a conductor material and connected in a vertical direction of the probe card; A probe formed in a column opposite the junction to contact the semiconductor device; And a plurality of pillars of conductor material bent side by side overlapping between the plurality of joints and the probes to form a plurality of bending pillars, wherein the bending pillars are vertically elastic portions arranged in multiple parallel to the probe card in a vertical direction. It includes; the total width of the junction portion, the probe portion and the vertical elastic portion with respect to the vertical direction of the probe card is formed shorter than the vertical length is made of a vertical structure, a plurality of junction portion through a plurality of vertical elastic portion It is connected to one probe.

In order to achieve the above object, the present invention provides a probe beam structure for a probe card for measuring a semiconductor device, the junction portion made of a pillar of the conductor material, connected in the vertical direction of the probe card; A probe formed in a column opposite the junction to contact the semiconductor device; And a vertical elastic part formed of a multi-folded structure having a "d" shape between the plurality of joint parts and the probe part, wherein the entire width of the joint part, the probe part and the vertical elastic part with respect to the vertical direction of the probe card is vertical length. Compared to the short form is made of a vertical structure.

In order to achieve the above object, the present invention provides a probe beam structure for a probe card for measuring a semiconductor device, the junction portion made of a pillar of the conductor material, connected in the vertical direction of the probe card; A probe formed in a column opposite the junction to contact the semiconductor device; And a vertical elastic portion formed in a multiple bending structure of an “S” type between the plurality of junction portions and the probe portion, wherein the entire widths of the junction portion, the probe portion, and the vertical elastic portion with respect to the vertical direction of the probe card are vertical lengths. Compared to the short form is made of a vertical structure.

In addition, the present invention preferably increases the density at the time of installation of the beam by configuring the entire width of the junction, the probe, and the vertical elastic portion to be smaller than the cantilever.

In addition, the present invention is preferably formed in the concave-convex surface and the through-holes in order to increase the contact area to prevent deformation of the probe beam and fracture of the probe portion when inspecting the product.

And the present invention preferably the vertical elastic portion absorbs the impact energy transmitted from the probe portion in contact with the semiconductor device, and forms a cutting space therein to satisfy the requirements of the consumer, the cutting space is a vertical elastic portion It is formed along the outer shape of the column, or it is formed in the shape of a free curve.

In addition, the present invention preferably the thickness of the pillar forming the junction, the probe and the vertical elastic portion is such that there is no deformation due to the impact energy transmitted from the probe in contact with the semiconductor device, the elastic force is bonded to both ends of the vertical elastic portion It depends on the area.

As described above, according to the present invention, the elastic parts are vertically arranged in the shape of the probe beam of the semiconductor measuring probe card, thereby limiting the operation direction of the probe beam only up and down when in contact with the semiconductor device, thereby minimizing scratches generated in the semiconductor device. In addition, the probe beam may be vertically extended, and thus, many probe beams may be easily arranged at small intervals, so that the probe beams may effectively cope with smaller and smaller semiconductor devices.

In addition, according to the present invention, it is possible to inspect a large amount of products at the same time during the production of the probe beam that meets the needs of the consumer, the yield stability, and the one time inspection due to the high directivity. This is shortened.

In addition, according to the present invention, it is possible to manufacture a common probe beam that can be used in various semiconductor device products, and by minimizing the amount of tip tip sliding of the probe beam, the work area is wide in the wire bonding operation of the post process, so that the work is easy. The advantage of being lowered is obtained, and the advantage of being able to cope with repair of the product in a short time is obtained.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A and 2B are schematic views of the probe card 100 for the probe card according to the present invention, and FIG. 2A is a probe beam connecting the junction 110 and the probe 120 to one vertical elastic portion 130. 2B is a schematic view of the improved probe beam 200 to control the size of the scrub mark by applying a double vertical elastic portion 230.

The probe beam 100 and 200 for the probe card according to the present invention shown in FIG. 2A maintains and measures the pressure necessary for the probe 120 when the probe 120 is in contact with a semiconductor device (not shown). The semiconductor device has a minimum mounting area of the vertical elastic parts 130 and 230 and the probe beam 100 to move the probe 120 in the vertical direction H to have sufficient elastic force to recover the original state afterwards. It is characterized by minimizing the distance between the probe portion 120 and the junction portion 110 to correspond to the joint surface of the.

The probe beam 100 for a probe card according to the present invention has a vertical elastic portion 130 formed at the center thereof is arranged vertically in parallel with the probe portion 120 and the junction portion 110 while the probe portion 120 and the junction portion ( 110) can be connected at both ends to cause elastic deformation.

In the probe card 100 for the probe card according to the present invention illustrated in FIG. 2A, the junction part 110 is connected in a vertical direction H of the probe substrate 40, and is made of a pillar K of a conductive material. The pillar K on the opposite side of the junction 110 is provided with a probe 120 in contact with the semiconductor device.

In addition, a vertical elastic portion 130 is formed between the junction portion 110 and the probe portion 120. The vertical elastic portion 130 has a plurality of pillars K of the conductor material bent side by side to overlap each other. The bending pillars Ka are formed, and the bending pillars Ka are arranged in parallel to the probe substrate 40 in the vertical direction H.

The probe beam 100 for the probe card according to the present invention has the overall width of the junction part 110, the probe part 120, and the vertical elastic part 130 with respect to the vertical direction H of the probe substrate 40. (W1) is shorter than the total length (L2) is made of a vertical structure.

In the vertical structure of the present invention, the total width W1 of the junction part 110, the probe part 120 and the vertical elastic part 130 is preferably configured so that the projection area is smaller than that of the cantilever. The density can be increased during installation.

In addition, the probe beam 200 according to the present invention forms an elastic portion by the method described above in the multiple probes 110 to one probe 120 in order to control the unexpected deformation of the probe beam 200 according to the dimensions thereof. In order to prevent deformation, the shape of the probe beam 200 may be changed.

That is, as shown in Figure 2b, the probe beam 200 for the probe card according to the present invention is provided with a plurality of junctions 110, one probe portion 120, the plurality of junctions 110 And a plurality of vertical elastic portions 230 disposed between the probe 120 and the plurality of vertical elastic portions 230 such that the pillars K of the conductive material are bent side by side to overlap each other. Ka), and the bending pillars Ka are arranged in parallel to each other in the vertical direction H with respect to the probe substrate 40.

Even in such a structure, the total width W1 of the junction part 110, the probe part 120, and the vertical elastic part 230 is preferably projected relative to the cantilever with respect to the vertical direction H of the probe substrate 40. By constructing a vertical structure occupying a small area, the density of the beam can be increased. In addition, the plurality of junctions 110 are connected to one probe unit 120 through multiple vertical elastic units 230.

3A and 3B are schematic diagrams of probe beams 300 and 400 for a probe card according to a modified embodiment of the present invention, and FIG. 3A is a vertical elasticity of a “d” type probe 120 and a junction 110. 3B is a schematic diagram of the probe beam 400 connecting the probe 120 and the junction 110 to the vertical elastic portion 430 of the “S” type. .

3A and 3B, the probe beam 300 and 400 for a probe card according to the present invention may be formed of a pillar K of a conductive material, and may be joined to a vertical direction H of the probe substrate 40. And a probe portion 120 formed at the pillar K on the opposite side of the junction portion 110 and contacting the semiconductor device, and having a multiple bending structure between the plurality of junction portions 110 and the probe portion 120. It includes a vertical elastic portion 330, 430 formed as.

Such vertical elastic portion 330, 430 is preferably a structure formed of a multi-folded structure of the "r" type, as shown in Figure 3a, or a "S" type multiple, as shown in Figure 3b It is a structure formed by a bending structure.

The total width W1 of the junction part 110, the probe part 120, and the vertical elastic part 330 and 430 in the vertical direction H of the probe substrate 40 is respectively compared with the total length L2. It is formed short and has a vertical structure. Preferably, the overall width W1 of the junction part 110, the probe part 120 and the vertical elastic part 330, 430 occupies a smaller projected area than the cantilever. It is possible to increase the density in the installation of the beam by configuring to.

In addition, the present invention is formed with the concave-convex surface 112 and the through-hole 114 in the junction 110, which prevents the deformation of the probe beam 100 and the breakage of the probe portion 120 when inspecting the product It is formed to increase the contact area for.

In addition, the probe beams 300 and 400 for the probe card according to the present invention have the vertical elastic portions 330 and 430 as shown in FIGS. 4A and 4B, and the cutting spaces 332 and 432 therein. The cutting spaces 332 and 432 may be formed along the outer shape of the bending pillar Ka of the vertical elastic portion 130 or may be formed in the shape of a free curve, and the probe portion 120 may contact the semiconductor device. It absorbs the impact energy transmitted from) and satisfies the requirements of the consumer.

In addition, the present invention transfers the thickness (T) of the pillar (K) forming the junction 110, the probe 120 and the vertical elastic portion 330, 430 from the probe 120 in contact with the semiconductor device. There is no deformation due to the impact energy, the elastic force is determined according to the bonding area of both ends of the vertical elastic portion 130.

Such a structure of the probe beam 300, 400 of the present invention has a reaction force and a sliding amount indicating a result value that meets the requirements of the consumer, and is designed and verified using the numerical formula of the following numerical analysis program, and directly Anger can be realized.

The probe beams 300 and 400 for the probe card according to the present invention are sheared by increasing the contact area to prevent deformation and breakage of the probe beams 300 and 400 when the probe 120 contacts the semiconductor device. This includes the shape design, which can be increased in area.

As shown in FIG. 3A, the probe beams 300 and 400 for the probe card according to the present invention, when contacted with a pad (not shown) of the semiconductor device, the probe 120 is in contact, the vertical elastic portion 330 430 and the reaction portion (110) generates a reaction force in accordance with the width (W2), thickness (T), distance (L3) of the bending column (Ka), and the probe portion proportional to the spacing (D) on the pad surface ( A rolling amount of the tip 122 of the 120 is generated.

The probe beams 300 and 400 for the probe card according to the present invention have a width W2 and a distance (W2) of the bending column Ka when the thickness T is determined in order to obtain a constant reaction force according to the contact amount. It is defined as a function by L3), and assuming that it is simple as shown in FIG. 5A, Equation 1 below.

Where P = working load, E = elastic modulus, I = cross-sectional secondary moment, delta = deflection, and l = distance L3.

In addition, the probe beams 300 and 400 are determined by the interval D, as shown in Equation 2 below, to control the tip 122 of the probe 120 in a predetermined amount, and FIG. 5B. As shown in FIG. 2, when the distance is "0", the amount of the tip 122 is increased proportionally as the distance increases with respect to "0", and when the sign is reversed, the distance is opposite, and the probe part 120 The tip amount of the tip 122 is reversed to each other.

Where S = amount of sliding, h = height from the probe beam 100 to the tip, l = length L3, and OD = amount of pressing.

In addition, the vertical length L2 of the vertical elastic portions 330 and 430 of the probe beams 300 and 400 is horizontal as a condition for the probe beams 300 and 400 to be a vertical type. It should be longer than the width W1, and determine the limit of the range as the maximum length when projecting the probe beams 300 and 400 in the xy direction, but the twist of the probe beams 300 and 400 due to the excessive longitudinal length L2. It is limited to the range where (Buckling) does not occur

Where P = buckling load, n = terminal coefficient, E = elastic modulus, I = cross-sectional secondary moment, and h = tip height.

The probe beams 300 and 400 according to the present invention formed under the above-described formula conditions increase the contact area so that the permanent deformation or shear of the probe beams 300 and 400 does not occur upon contact with the pads of the semiconductor device. By reducing the shear stress (A = Zp / S), it is possible to correctly perform the function of the probe substrate 40, and a large effect is obtained in suppressing the increase in the manufacturing cost by the overall life extension and repair and reinforcement.

As described above, the present invention arranges the elastic parts 130, 230, 330, and 430 vertically in the shape of the probe beams 100, 200, 300, and 400 of the probe card. In addition, the operation directions of the probe beams 100, 200, 300, and 400 may be limited only up and down, thereby minimizing scratches on the scrub marks generated in the semiconductor device.

In addition, since the probe beams 100, 200, 300, 400 are vertically extended, many probe beams 100, 200, 300, 400 can be easily arranged at small intervals. It can respond effectively to the semiconductor device becoming smaller.

In addition, the present invention, when manufacturing the probe beams 100, 200, 300, 400 in accordance with the needs of the consumer, at the time of the one-time inspection due to the high direct after the stable yield, it is to inspect a large amount of products at the same time It is possible, thereby shortening the product manufacturing and semiconductor inspection time.

In addition, the present invention enables the fabrication of common probe beams 100, 200, 300, and 400 that can be used in various semiconductor device products, and tips 122 of the probe unit 120 provided in the probe beam. ) By minimizing the amount of rolling, the work area becomes wider in the wire bonding work of the post-process, so that the work becomes easier, and it is possible to cope with the repair of the product in a short time.

1A is a side cross-sectional view showing the structure of a typical probe card.

1B is a side view showing the structure of a conventional probe beam used in a general probe card.

2A and 2B are side views illustrating the structure of a vertical probe beam for a probe card according to the present invention.

3A and 3B are side views illustrating structures of the " d " and " S " types in the vertical probe beam for the probe card according to the present invention.

Figures 4a and 4b is a side view having a cutting space inside the vertical elastic portion in the vertical probe beam for the probe card according to the present invention.

5A and 5B are graphs used to explain equations used in a numerical analysis program for verifying reaction force and amount of sliding in a vertical probe beam for a probe card according to the present invention.

1 ..... conventional probe beam 10 ..... probe card

20 .... Printed Circuit Board 30 ..... Interconnect

40 ... probe board 50 ... junction

60 ... elastic part 70 ... probe

72 .... Probe tip 100,200,300,400 .... Probe beam

110 ... Connection 112 .... Uneven surface

114 ... through hole 120 ....

122 ... Tip 130,230,330,430 ... Vertical Elastic

332,432 .... Cutting Space

D .... Spacing H ..... Vertical orientation of the probe card

K ..... Pillars Ka .... Bending Pillars

L1 .... Length between probe tip and joint

L2 ..... Full length in portrait

L3 ..... The distance of the bending column

T ..... Thickness W1 .... Overall Width

W2 .... the width of the bending column

Claims

In the probe beam structure for a probe card for measuring a semiconductor device,

A joint 110 formed of a pillar K of the conductive material and connected to the vertical direction H of the probe substrate 40;

A probe part 120 formed at the pillar K on the opposite side of the junction part 110 to contact the semiconductor device; And

Between the junction part 110 and the probe part 120, the pillars K of the conductor material are bent side by side and overlapped to form a plurality of bending pillars Ka, and such bending pillars Ka are the probe substrate 40. And a vertical elastic part 130 disposed parallel to the vertical direction (H) with respect to the junction, and the junction part 110, the probe part 120, and the vertical direction H of the probe substrate 40. The total width W1 of the vertical elastic portion 130 is shorter than the total length (L2) is a vertical probe beam 100 for a probe card, characterized in that made of a vertical structure.

A plurality of joints 110 formed of pillars K of the conductive material and connected in a vertical direction H of the probe substrate 40;

Between the plurality of junctions 110 and the probes 120, the pillars K of the conductor material are bent side by side to overlap each other to form a plurality of bending pillars Ka, and such bending pillars Ka are probe substrates. A vertical elastic portion 230 arranged in multiple parallel to the vertical direction (H) relative to the (40), the junction portion 110, the probe portion with respect to the vertical direction (H) of the probe substrate 40 The overall width W1 of the 120 and the vertical elastic portion 230 is shorter than the total length L2 to form a vertical structure, and the plurality of junctions 110 are multiple vertical elastic portions 230. Vertical probe beam 200 for the probe card, characterized in that connected to one probe 120 through.

And a vertical elastic portion 330 formed in a multi-folded structure having a “d” type between the plurality of junctions 110 and the probes 120, and with respect to the vertical direction H of the probe substrate 40. The total width W1 of the junction part 110, the probe part 120, and the vertical elastic part 330 is shorter than the total length L2, and thus the vertical shape for the probe card is made of a vertical type. Probe beam 300.

It includes a vertical elastic portion 430 formed of a multi-bending structure of the "S" type between the plurality of junction portion 110 and the probe portion 120, and with respect to the vertical direction (H) of the probe substrate 40 The total width W1 of the junction part 110, the probe part 120, and the vertical elastic part 430 is shorter than the total length L2, and thus is vertical in shape. Probe beam 400.

According to any one of claims 1 to 4, The junction portion 110 is uneven to increase the contact area to prevent deformation of the probe beam 100 and breakage of the probe portion 120 during product inspection. Vertical probe beam for the probe card, characterized in that the surface 112 and the through-hole 114 is formed.

The method according to any one of claims 1 to 4, wherein the vertical elastic portion 130, 230, 330, 430 absorbs the impact energy transmitted from the probe portion 120 in contact with the semiconductor device, Cutting spaces 332 and 432 are formed therein in order to satisfy the demand specification of the consumer, and the cutting spaces 332 and 432 are columns of the vertical elastic portions 130, 230, 330 and 430. K) A vertical probe beam for a probe card, characterized in that it is formed along an outer shape or in a shape of a free curve.