KR20110006619U - Susceptor for clamping wafer and atomic layer deposition apparatus having the same - Google Patents

Abstract

A wafer holding susceptor and an atomic layer deposition apparatus including the same, which can stably fix a wafer even when rotating, are provided. A susceptor according to an embodiment of the present invention is provided in a disk-shaped base plate, an upper surface of the base plate and a pocket on which the wafer is seated, and a side surface of the pocket to press the side of the wafer to fix the wafer. It includes a clamp portion. According to the wafer fixing susceptor and the atomic layer deposition apparatus including the same, the edge of the wafer seated in the susceptor pocket can be stably fixed, thereby preventing the wafer from falling off and stably preventing gas inflow into the wafer side. It can be effective.

Atomic layer deposition equipment, susceptors, wafers, clamping

Description

Wafer-fixed susceptor and atomic layer deposition apparatus having same {SUSCEPTOR FOR CLAMPING WAFER AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME}

The present invention relates to a susceptor and an atomic layer deposition apparatus including the same, and more particularly, to a wafer fixing susceptor capable of stably fixing a wafer seated on the susceptor and an atomic layer deposition apparatus including the same.

In general, in order to deposit a thin film having a predetermined thickness on a wafer such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction ( thin film manufacturing method using chemical vapor deposition (CVD) or the like is used.

As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent stem coverage, has been increasing.

The atomic layer deposition (ALD) method is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, the atomic layer deposition method processes one gaseous material. It is different in that it is injected into the chamber and then purged to leave only the physically adsorbed gas on top of the heated wafer, and then inject other gaseous materials to deposit chemical reaction products that occur only on the top of the wafer. The thin film implemented through such an atomic layer deposition method has a high step coverage characteristic and has the advantage that it is possible to implement a pure thin film having a low impurity content, which is widely attracting attention.

Meanwhile, a semi-batch type atomic layer deposition apparatus capable of simultaneously depositing thin films on a plurality of wafers is disclosed. In the conventional semi-batch type atomic layer deposition apparatus, a plurality of wafers are disposed radially along the circumferential direction on the susceptor, and as the susceptor rotates, source gas is sequentially sprayed onto the wafer to perform the deposition process.

However, due to the rotation of the susceptor, the wafer may not be stably seated on the susceptor and slides out. This is due to the morphological characteristics of the susceptor pocket on which the wafer is seated, because the pocket is formed to have a larger area than the wafer to facilitate loading and unloading of the wafer. In order to prevent this, a method of forming an inclination at the top of the pocket and forming a bottom of the same size as the wafer has been devised, but this acts as a factor that prevents accurate loading and unloading of the wafer due to machining errors.

Since the wafer is not securely seated in the susceptor pocket, a phenomenon in which deposition gas is not uniformly supplied to the wafer may occur, or the wafer may be released from the pocket. This is a major problem because it causes a defect of the wafer.

Accordingly, an object of some embodiments of the present invention is to provide a wafer fixing susceptor capable of stably fixing a wafer seated on a susceptor and preventing slipping of the wafer, and an atomic layer deposition apparatus including the same. .

In addition, another object according to some of the embodiments of the present invention, a wafer holding susceptor that can release the fixed when loading and unloading the wafer, and can selectively secure the wafer only when the wafer is seated and the same It is to provide an atomic layer deposition apparatus.

In order to achieve the above objects, a susceptor for an atomic layer deposition apparatus according to an embodiment of the present invention, a disk-shaped base plate, a pocket provided on the base plate upper surface and the wafer is seated, and the side of the pocket It is provided in the clamp portion to press the side of the wafer to secure the wafer.

According to a first embodiment of the present invention, the pocket is recessed into the base plate at a depth lower than the height of the wafer, and the clamp portion is located on the base plate surface and reciprocates to press the side of the wafer. A possible clamping member, and a driver for transmitting a driving force to enable the reciprocating movement of the clamping member.

Preferably, the outer peripheral surface of the clamping member has a ring shape corresponding to the side surface of the wafer.

According to the second embodiment of the present invention, the clamp part has a side surface extending from the bottom of the pocket to the side of the wafer, the clamping member reciprocating to pressurize the side of the wafer, and the reciprocating movement of the clamping member It includes a drive for transmitting a driving force to enable.

The clamping member may include a first clamping member provided on one side of the wafer and a second clamping member provided on the other side of the first clamping member.

Preferably, the outer circumferential surface of the clamping member has a ring shape corresponding to the side surface of the wafer.

According to the third embodiment of the present invention, the clamp portion, the flange is arranged on the side of the rotation direction of the base plate, the injection hole is formed in the other inner pocket side of the flange and the gas toward the side of the wafer through the injection hole The first flow path is injected, and the first gas supply for supplying gas to the first flow path.

Preferably, the first flow path includes a first side flow path in which an injection hole is formed on the side of the wafer, and a first inclined flow path in which the injection hole is formed in an oblique direction from the side of the wafer.

The clamp includes a second flow path having a shape symmetrical with the first flow path on the flange side, and a second gas supply part supplying gas to the second flow path.

The atomic layer deposition apparatus according to the present invention includes a process chamber in which a plurality of wafers are accommodated and a deposition process is performed, a shower head provided on the process chamber to provide deposition gas to the wafer, and a deposition gas to the shower head. It includes a deposition gas supply unit for supplying, and the susceptor according to the first to third embodiments.

According to the wafer holding susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, the wafer is stably fixed to the susceptor to prevent slipping.

In addition, according to the wafer holding susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, when loading and unloading the wafer, the fixing can be released and the wafer can be selectively fixed only when the wafer is seated. It has an effect.

According to the wafer holding susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, the clamping member holding the wafer is configured to be in surface contact with the wafer, thereby preventing the deposition gas from flowing into the wafer side. It works.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under the above-mentioned rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to a first embodiment of the present invention, Figure 2 is a cross-sectional view of a susceptor according to a first embodiment of the present invention, Figure 3 is a second embodiment of the present invention Is a cross-sectional view of the susceptor. 4 is a perspective view of a susceptor according to a third embodiment of the present invention, and FIGS. 5 and 6 are cross-sectional views showing an operating state thereof.

First embodiment

Hereinafter, an atomic layer deposition apparatus according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 2.

Referring to FIG. 1, an atomic layer deposition apparatus includes a process chamber 101 in which a wafer is accommodated and a deposition process is performed, a susceptor 102 in which a wafer is seated in the process chamber 101, and an upper portion of the process chamber 101. And a shower head 103 provided in the wafer to provide the deposition gas to the wafer, and a deposition gas supply unit 104 supplying the deposition gas to the shower head 103.

The wafer may be a silicon wafer. However, the object of the present invention is not limited to a silicon wafer, and the wafer may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). In addition, the wafer is not limited in shape and size by drawing, and may have substantially various shapes and sizes, such as circular and rectangular plates.

The process chamber 101 accommodates a wafer and provides a space in which a deposition process is performed. In the process chamber 101, a susceptor 102 on which a wafer is seated and a shower head 103 providing a deposition gas to a wafer are provided. It is provided.

The susceptor 102 is provided in the process chamber 101, and a plurality of wafers are seated. Here, the susceptor 102 is a semi batch type having excellent throughput. One surface of the wafer is seated on the upper surface of the susceptor 102 so that a deposition process may be performed by simultaneously receiving a plurality of wafers. But is disposed radially along the circumferential direction of the susceptor 102. For example, the susceptor 102 may be seated with six wafers spaced apart from each other by a predetermined interval.

A drive shaft 125 for rotating the susceptor 102 is provided below the susceptor 102 so that the wafer revolves about the center point of the susceptor 102 as the susceptor 102 rotates. In addition, the drive shaft 125 moves the susceptor 102 up and down a predetermined distance in the process chamber 101.

The shower head 103 is provided above the process chamber 101 to provide deposition gas to the wafer surface seated on the susceptor 102.

The deposition gas includes a source gas containing a material constituting the thin film to be formed on the wafer surface and a purge gas for purging the source gas. In addition, according to the present embodiment, different kinds of gases are used as the source gas, which reacts with each other on the wafer surface to form a thin film material, and the purge gas does not chemically react with the source gas, the wafer, and the thin film formed on the wafer. Do not use stable gas.

One side of the shower head 103 is connected to the deposition gas supply unit 104 for supplying the deposition gas to the shower head 103.

Hereinafter, the susceptor 102 according to the first embodiment of the present invention will be described in detail with reference to FIG. 2.

The susceptor 102 includes a base plate 121, a pocket 123, and a clamp portion 105.

The base plate 121 is a disk-shaped member, and the upper surface of the base plate 121 is provided with a pocket 123 on which the wafer 10 is seated.

The pocket 123 has a recessed space formed to accommodate the wafer 10 therein, and is formed to have a diameter slightly larger than the diameter of the wafer 10. The depth of the pocket 123 is formed lower than the side height of the wafer 10.

As a result, when the wafer 10 is inserted into the pocket 123, a portion of the upper side of the wafer 10 protrudes above the surface of the base plate 121. That is, as shown in FIG. 2, the wafer 10 accommodated in the pocket 123 protrudes upward from the pocket sidewall 124.

The clamp part 105 is provided on the side surface of the pocket 123 and presses the side surface of the wafer 10 to fix the wafer 10.

The clamp unit 105 includes a clamping member 151 and a driving unit 155.

The clamping member 151 is positioned on one side of the wafer 10 and is a member that is slidable from the upper surface of the base plate 121 toward the wafer 10.

The outer circumferential surface of the clamping member 151 may have a ring shape corresponding to the side surface of the wafer 10. The outer circumferential surface of the clamping member 151 in contact with the wafer 10 is formed to be in surface contact with the wafer 10, thereby effectively preventing deposition gas flowing into the side surface of the wafer 10.

The clamping member 151 is coupled to the connecting shaft 153, and the connecting shaft 153 is connected to the driving unit 155, and the clamping member 151 is connected to the wafer 10 by the driving force of the driving unit 155. It is possible to reciprocate to the side. That is, during loading or unloading, the clamping member 151 retreats from the wafer 10 and the fixing of the wafer 10 is released. When the susceptor 102 is rotated, the clamping member 151 is the wafer 10. Advance toward to fix the wafer (10).

Second embodiment

Hereinafter, referring to FIG. 3, the susceptor 202 and the atomic layer deposition apparatus including the same according to the second embodiment of the present invention will be described in detail.

Since the atomic layer deposition apparatus according to the second embodiment has a portion similar to the atomic layer deposition apparatus according to the first embodiment, the description of the similar portions will be omitted for simplicity, and the atomic according to the second embodiment will be omitted. The susceptor 202 which is different from the atomic layer deposition apparatus according to the first embodiment will be described in detail.

Referring to FIG. 3, the susceptor 202 includes a base plate 221, a pocket 223, and a clamp 205.

The pocket 223 protrudes higher than the upper surface of the base plate 221, and the wafer 10 is seated on the upper portion of the pocket 223. The pocket 223 may be formed to have an upper surface flat to have the same area as the wafer 10.

The clamp part 205 includes clamping members 251 and 252 and a driving part 255.

Sides of the clamping members 251 and 252 extend from the bottom of the pocket 223 to the side of the wafer 10. That is, as shown in FIG. 3, the clamping members 251 and 252 are formed at a height that can be in contact with the side surface of the wafer 10 from the upper surface of the base plate 221, so that the wafers may be moved by the reciprocating movement of the clamping members 251 and 252. The side of 10 is configured to be pressurized.

The outer peripheral surfaces of the clamping members 251 and 252 may have a ring shape corresponding to the side surfaces of the wafer 10. The outer circumferential surfaces of the clamping members 251 and 252 in contact with the wafer 10 are formed to be in surface contact with the wafer 10, thereby effectively preventing deposition gas flowing into the side surface of the wafer 10. Preferably, the clamping members 251 and 252 may be configured to be in surface contact with the entire area of the side surface of the wafer 10.

The clamping members 251 and 252 include a first clamping member 251 connected to the driving unit 255 and a second clamping member 252 provided on an opposite side of the second clamping member 251 to contact the wafer 10. do.

The first clamping member 251 is a member that is slidably reciprocated toward the wafer 10 from the upper surface of the base plate 221, and is capable of selectively pressing and fixing the wafer 10.

The first clamping member 251 may be connected to the driving unit 255 to receive the driving force of the driving unit 255 to selectively fix the wafer 10.

The second clamping member 252 is provided on the other side of the first clamping member 251 to fix and support the wafer 10 moved by the first clamping member 251.

In the present exemplary embodiment, only the first clamping member 251 is slidably reciprocated, and the second clamping member 252 has been described as an example, but is not limited thereto. That is, like the first clamping member 251, the second clamping member 252 may be configured to be slidably reciprocated so that the wafer 10 may be more stably fixed.

Third embodiment

Hereinafter, a susceptor according to a third embodiment of the present invention will be described with reference to FIGS. 4 to 6.

Since the atomic layer deposition apparatus according to the third embodiment has a portion similar to that of the atomic layer deposition apparatus according to the first embodiment, the description of the similar portions will be omitted for simplicity, and the atoms according to the third embodiment will be omitted. The susceptor 302 which is different from the atomic layer deposition apparatus according to the first embodiment will be described in detail.

The susceptor 302 includes a base plate 321, a pocket 323, and a clamp 305, and the clamp 305 includes a flange 324, a first flow path 351, and a first gas supply part 355. , A second flow path 352 and a second gas supply part 356.

As shown in FIGS. 5 and 6, the flange 324 is formed to be inclined upward from the edge of the pocket 323 to restrain the wafer 10. As shown in FIG. 4, the flange 324 is disposed on the rotational side of the base plate 321.

5 and 6, a first flow path 351 is formed at the other side of the flange 324. The injection hole of the first flow path 351 is formed on an inner side surface of the pocket 323 located on the other side of the flange 324, and the first flow path 351 is connected to the first gas supply part 355 to provide a wafer 10. The gas is sprayed toward the side surface of the wafer) to move the wafer 10 toward the flange 324.

The first flow path 351 includes a first side flow path 351a having an injection hole formed toward the side of the wafer 10 and a first inclined flow path 351b having an injection hole formed in an oblique direction from the side of the wafer 10. do.

The first side channel 351a presses the wafer 10 toward the flange 324 so that the wafer 10 is constrained by the flange 324, and the first inclined channel 351b stops the movement of the wafer 10. In order to smoothly push the wafer 10 in the horizontal direction and at the same time serves to reduce the friction by applying a part of the lifting force in the vertical direction.

The second flow path 352 is formed on the side of the pocket 323 in which the flange 324 is formed, which is opposite to the first flow path 351. The second flow path 352 has a shape symmetrical with the first flow path 151. That is, the second flow path 352 is connected to the second gas supply unit 356 to apply a gas pressure to the wafer 10 toward the first flow path 351, the second side flow path 352a and the second slope The flow path 352b is included.

The first gas supply part 355 and the second gas supply part 356 may be integrally formed, and may be configured to selectively supply gas to the first flow path 351 and the second flow path 352. The gas is preferably nitrogen or an inert gas.

Hereinafter, the fixing of the wafer 10 by the susceptor 302 according to the third embodiment will be described.

Referring to FIG. 5, in order to stably restrain the wafer 10 in the pocket 324, when the gas pressure from the first gas supply part 355 is injected through the first flow path 351, the wafer 10 may be flanged. It moves toward 324, and is stably fixed by the gas pressure injected through the flange 324 and the first flow path 351.

Since the gas is continuously injected from the first flow path 351 when the wafer 10 is fixed, a flow is formed by the injection gas toward the side of the wafer 10, and the deposition gas flows into the side of the wafer 10. Can be effectively prevented.

On the contrary, referring to FIG. 6, in order to release the wafer 10 from the pocket 324 for loading or unloading the wafer 10, the gas pressure supplied from the second gas supply unit 356 may be changed into a second flow path ( Through the 352 to the wafer 10. As a result, the wafer 10 moves toward the first flow path 351 to release the restraint from the flange 324.

According to the wafer holding susceptor according to the present invention and the atomic layer deposition apparatus including the same, the wafer mounted on the susceptor can be stably and selectively fixed to prevent slippage, and the deposition gas is transferred to the wafer side by the clamping member. It can effectively block the inflow.

As described above, the present invention has been described with reference to the preferred embodiment of the present invention, but those skilled in the art can variously modify and devise the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be appreciated that it can be changed.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to a first embodiment of the present invention;

2 is a cross-sectional view of a susceptor according to a first embodiment of the present invention;

3 is a cross-sectional view of a susceptor according to a second embodiment of the present invention;

4 is a perspective view of a susceptor according to a third embodiment of the present invention;

5 and 6 are cross-sectional views of a susceptor according to a third embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10 wafer 101 process chamber

102, 202, 302: susceptor 103: shower head

104: deposition gas supply unit 105, 205, 305: clamp unit

Claims (10)

In a susceptor for an atomic layer deposition apparatus, Disc-shaped base plate; A pocket provided on an upper surface of the base plate and on which the wafer is seated; And A clamp unit provided at a side of the pocket to press the side of the wafer to fix the wafer; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 1, The pocket is recessed into the base plate to a depth less than the height of the wafer, The clamp unit, A clamping member located on the base plate surface and movable reciprocally to pressurize the side of the wafer; And A driving unit transmitting a driving force to enable the reciprocating movement of the clamping member; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 2, An outer circumferential surface of the clamping member has a ring shape corresponding to the side surface of the wafer. The method of claim 1, The clamp unit, A clamping member having a side surface extending from the bottom of the pocket to a side surface of the wafer, the clamping member reciprocating to press the side surface of the wafer; And A driving unit transmitting a driving force to enable the reciprocating movement of the clamping member; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 4, wherein The clamping member includes a first clamping member provided on one side of the wafer and a second clamping member provided on the other side of the first clamping member. The method of claim 4, wherein An outer circumferential surface of the clamping member has a ring shape corresponding to the side surface of the wafer. The method of claim 1, The clamp unit, A flange disposed on the rotational side of the base plate; A first flow path having a jet hole formed on the inner side surface of the other pocket of the flange, and the gas being injected toward the side surface of the wafer through the jet hole; And A first gas supply part supplying gas to the first flow path; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 7, wherein The first flow path, A first side channel formed with a jet hole facing the side of the wafer; And A first inclined flow path in which an injection hole is formed in an inclined direction at a side of the wafer; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 8, The clamp unit, A second flow passage having a shape symmetrical with the first flow passage on the flange side; And A second gas supply part supplying gas to the second flow path; Susceptor for atomic layer deposition apparatus comprising a. A process chamber in which a plurality of wafers are accommodated and a deposition process is performed; A shower head provided on the process chamber to provide deposition gas to the wafer; And A deposition gas supply unit supplying a deposition gas to the shower head; And The susceptor according to any one of claims 1 to 9, wherein the susceptor is provided in the process chamber to seat a plurality of wafers; Atomic layer deposition apparatus comprising a.

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