KR20100094875A - Method of plating and plating structure - Google Patents

Abstract

PURPOSE: A plating method and a plating structure are provided to form an additional plating layer excluding nickel plating on an anodized metal surface, thereby achieving a stereoscopic plating structure. CONSTITUTION: A plating method comprises steps of: removing a metal layer exposed by removing a masking layer, forming a metal pattern on the metal layer, and partially anodizing the metal layer exposed around the metal pattern to form an oxidation layer(130). The metal pattern is obtained by forming the masking film out of a masking material on the metal layer and plating the metal layer from which the masking film is removed.

Description

Plating method and plating structure {METHOD OF PLATING AND PLATING STRUCTURE}

The present invention relates to a plating method of anodized metal and a plating structure by the plating method, and more particularly, to a plating method and a plating structure capable of forming an anodized oxide layer and a plating layer together on a metal surface.

The anodizing method is a method of forming an oxide film having great adhesion with the target metal by oxygen generated from the anode by electrolyzing the target metal on the anode and in a dilute acid solution. ) Is a compound word.

The most representative material of the anodizing method is aluminum (Al), and in addition to the metal material such as magnesium (Mg), tin (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf) and niobium (Nb). Is being applied.

As described above, it is applicable to most metal materials, and the oxide layer formed by the anodizing method has a great adhesion to the target metal so that no peeling occurs, the electrical resistance is high, the hardness is high, and the wear resistance and corrosion resistance are good. There are outstanding advantages that can be dyed.

On the other hand, the oxide layer formed by the anodizing method may form a separate plating layer when applied to jewelry that lacks the gloss itself and requires a gorgeous appearance.

However, the bonding structure of the oxide layer formed by the anodizing method is close to the bonding structure of the ceramic bonded by the covalent bond, and the plating layer separately plated on the oxide layer is close to the bonding structure of the metal bonded by the metal bond.

Thus, the adhesion layer and the plating layer formed on the oxide layer is not good adhesion due to the difference in the mutual coupling structure, and thus the peeling phenomenon that the plating layer is easily separated from the oxide layer easily occurs.

Because of this limitation, even if a separate plating layer is formed on the metal to which the anodizing method is applied, it is difficult to maintain the plating effect for a long time.

The present invention provides a plating method and a plating structure capable of forming an anodized oxide layer and a plating layer together on a metal surface.

It provides a volumetric plating structure of the present invention.

According to an exemplary embodiment of the present invention, the plating method includes forming a metal pattern on the metal layer, and anodizing the exposed metal layer around the metal pattern to form an oxide layer.

At this time, the metal pattern formed on the metal layer is formed by using a masking material on the metal layer to form a masking film, the method of forming a plating on the portion where the masking film is removed, and a patterning layer on the metal layer, masking on the patterning layer The masking film may be formed by applying a material, and the masking material and the patterning layer may be removed and formed together to correspond to the metal pattern.

In addition, when the metal pattern is formed by plating the portion where the masking film is removed, the metal layer exposed to the masking film may be removed to a predetermined depth before plating, and the masking material and the patterning layer may be removed at once to remove the metal pattern. In the case of forming, the masking material to be removed and the metal layer located below the patterning layer may be removed to a predetermined depth.

After removing the metal layer to a predetermined depth, the metal layer exposed around the metal pattern is oxidized to a predetermined depth from the surface of the metal layer using an anodizing method to form an oxide layer. Thus, a predetermined gap is generated between the oxide layer and the metal pattern. Volumetric plating structure can be realized.

In addition, after the oxide layer is formed, a separate plating layer may be formed on the metal pattern. Since the plating layer has a strong bonding force with the metal pattern, the phenomenon in which the plating layer is peeled from the metal pattern is minimized.

The material of the metal layer described above may be a metal material such as magnesium (Mg), tin (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf), niobium (Nb), and the like. It is preferable to use.

In addition, coloring may be performed simultaneously in the process of forming an oxide layer by adding a dye in the process of anodizing the metal layer.

In addition, the separate plating layer to be plated on the plating pattern is preferably plated using chromium. Because nickel has recently been affected by the trend of limiting its use, many nickel-free plating products have been developed that do not use nickel. However, these plating layers are substantially abrasion resistance, vibration resistance, salt water resistance, etc. The reason for not passing the same reliability test is because of limitations in the application.

Further, according to another exemplary embodiment of the present invention, the plating method includes the steps of providing a metal layer, forming an anodizing pattern on the metal layer, and plating the metal layer exposed around the anodizing pattern to form a plating layer. It can include;

Plating method and plating structure according to the present invention is not limited to a specific product or field.

The plating method of the present invention can simultaneously form an anodized oxide layer and a plating layer on the metal surface.

The plating method of the present invention may further form a plating layer excluding nickel plating on the anodized metal.

The plating method of the present invention can provide a three-dimensional plating structure by a predetermined height difference between the oxide layer and another plating layer.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and may be described by quoting contents described in other drawings under such a rule, and the contents repeated or deemed apparent to those skilled in the art may be omitted.

Example 1

1 is a cross-sectional view of a plating structure according to an embodiment of the present invention.

Referring to FIG. 1, the plating structure 100 includes an aluminum layer 110, a copper plating layer 120, an oxide layer 130, and a chromium layer 140.

In the plating structure 100 of the present embodiment, the aluminum layer 110 is not only pure aluminum but also aluminum alloy, magnesium (Mg), tin (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf), and niobium ( Nb) can be used by forming any one of metal materials or alloys.

The copper plating layer 120 having a predetermined pattern is formed on the surface of the aluminum layer 110, and the aluminum layer 110 is anodized on the portion where the copper plating layer 120 is not formed. An oxide layer 130 formed by oxidizing with phosphorous alumina (Al 2 O 3) is positioned.

For reference, the copper plating layer 120 may be plated using a metal and a metal alloy other than copper.

In addition, the copper plating layer 120 according to the present embodiment, in order to improve the bonding property of the copper plating layer 120 formed on the aluminum layer 110, a copper cyanide (copper cyanide) layer on the aluminum layer 110 first; The copper sulfide layer may be formed by sequentially plating a copper sulfide layer plated with a sulfuric acid bath on the blue copper layer. In this case, the aluminum layer may further include a blue copper strike layer that is strike-plated on the aluminum layer 110 before the blue copper layer is plated. It is also possible to further improve the adhesion between the 110 and the cyanide copper layer plated thereon.

The chromium layer 140 is formed on the surface of the copper plating layer 120, and the chromium layer 140 may be formed by plating the surface of the copper plating 120.

Hereinafter, a plating method for producing the above-described plating structure will be described.

2 to 7 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

First, referring to FIG. 2, an aluminum layer 110 to be plated is provided, and the photosensitive film 150 is evenly applied thereon. The coated photoresist 150 may be patterned in a pattern desired by a manufacturer by a photolithography process. In some cases, the photoresist film 150 may omit a separate patterning process through a method such as silk screen.

Referring to Figures 3 and 4 will be described a process of patterning the photosensitive film by a photolithography process.

As shown in FIG. 3, the photosensitive film 150 is exposed to light such as a laser through the light-transmitting region A of the mask 160 when the positive type photosensitive film 150 is used as in the present embodiment. Do this. Thereafter, when the photosensitive film 150 of the unexposed part is removed, the photosensitive film 155 patterned in a predetermined pattern is formed as shown in FIG. 4. In this case, the non-transmissive region B of the mask 160 has the same region as the formation pattern of the copper plating layer 120 which will be described later.

In this embodiment, a positive type photoresist film is used. However, in some cases, a negative type photoresist film may be used. In this case, the light-transmitting area A of the mask 160 may be formed by the copper plating layer 120 which will be described later. It has the same area as the formation pattern.

After patterning the photoresist film 150, the copper plating layer 120 is formed as shown in FIG. 5 with the patterned photoresist 155 intact. The copper plating layer 120 may be formed by a general plating method. In the present embodiment, the copper plating layer 120 is limited to the copper plating layer 120. However, in some cases, the copper plating layer 120 may be formed using various metals and alloys in addition to the copper plating layer 120. It may be formed.

For reference, before plating the copper plating layer 120, the aluminum layer 110 may be removed to a predetermined depth while the photoresist layer 155 is removed. In this case, the aluminum layer 110 may be etched to a predetermined depth by an etching process using an acid. will be. In this case, a predetermined height difference may occur between the copper plating layer 120, the chromium layer 140, and the oxide layer 130, which will be described later, to provide a more voluminous plating structure 100.

In some cases, the copper plating layer 120 is formed by first forming a patterning layer to cover the entire surface of the aluminum layer 110, applying a masking material covering the surface of the patterning layer, and removing the masking material and the patterning layer together. It could be.

Here, the masking material may be removed using a laser in a pattern corresponding to the copper plating layer 120, and then the copper plating layer 120 may be formed by etching the patterning layer of the portion where the masking material has been removed by etching. At this time, in the process of removing the patterning layer in order to provide a more voluminous plating structure, the aluminum layer 110 located below the patterning layer may be removed together to a predetermined depth.

In the present specification, the masking material may refer to a selectively etchable material such as a photosensitive film.

As described above, in the case where the copper plating layer 120 formed on the aluminum layer 110 is composed of a cyanide copper strike layer, a cyanide copper layer, and a plurality of plating layers in which copper chloride or copper sulfide layers are sequentially formed, Each layer can be formed by plating sequentially.

After the copper plating layer 120 is formed, as shown in FIG. 6, the remaining patterned photoresist 155 is removed to leave only the copper plating layer 120 on the surface of the aluminum layer 110.

As shown in FIG. 7, the oxide layer 130 is formed on the aluminum layer 110 exposed between the patterns of the copper plating layer 120 by using an anodizing method.

The oxide layer 130 formed by the anodizing method has a strong adhesive force with the aluminum layer 110 and does not have a peeling phenomenon. The electrical resistance is high, the hardness is high, and the wear resistance and corrosion resistance are excellent, and the oxide layer 130 is also excellent. ) Can be dyed by adding dye during formation because of the presence of fine pores. The dyeing method penetrates the pigment into the oxide layer 130 itself, and thus does not peel off the color and provides color while maintaining the inherent gloss of aluminum.

For reference, the oxide layer 130, which is an anodizing anodized film, uses the aluminum layer 110 as an anode in an electrolyte solution to form an oxide film by oxygen generated by the generator, as opposed to the general plating method, and the cathode uses an inert material such as lead. .

In addition, a strong electric field is applied to the surface of the aluminum layer 110 to draw aluminum ions by its force and combine with oxygen to form an electric field so that oxidation of the copper plating layer 120 can be minimized during anodizing to form aluminum oxide. Adjust appropriately. At this time, the melting point of pure aluminum is 659.7 ℃, the melting point of copper is 1084.5 ℃, it can be seen that the bonding strength between the elements of the copper is stronger, because of this, the oxidation of aluminum occurs more easily under the same electric field conditions, in the present embodiment By controlling this, the oxidation of the copper plating layer 120 may be minimized or anodized to hardly occur. In addition, in some cases, during anodizing the aluminum layer 110, a pretreatment process may be performed to form a separate film so that oxidation of the copper plating layer 120 is not minimized.

Thereafter, a separate plating layer may be formed on the surface of the copper plating layer 120 to complete the plating structure 100 according to the embodiment of the present invention shown in FIG. 1, and in this embodiment, chromium is used by using chromium. Form layer 140. The chromium layer 140 is preferably formed using a plating method. For example, the chromium layer chromium plating and the chromium chloride chromium plating method may be used, which are representative methods for forming the chromium plating layer.

The plating structure 100 manufactured by the plating method as described above is easy to color the oxide layer 130 can be widely used in places such as precious metals and accessories.

In addition, the plating structure 100 may not only form an oxide layer 130 having strong durability and wear resistance by using an anodizing method, but also form a separate chromium layer 140 on the metallic plating pattern, that is, the copper plating layer 120. This can solve the weak gloss problem.

In addition, the chromium layer 140 having a strong bond with the oxide layer 130 may be formed on the oxide layer 130 by using chromium on the trend of being limited in recent years due to the harmfulness of nickel.

Example 2

8 is a cross-sectional view of a plating structure according to another embodiment of the present invention.

Referring to FIG. 8, the plating structure 200 includes an aluminum layer 210, a copper plating layer 220, an oxide layer 230, and a chromium layer 240.

In the plating structure 200 of the present embodiment, the aluminum layer 210 is not only pure aluminum but also aluminum alloy, magnesium (Mg), tin (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf) and niobium ( Nb) can be used by forming any one of metal materials or alloys.

On the surface of the aluminum layer 210 described above, an oxide layer 230 having a predetermined pattern formed by anodizing the aluminum layer 210 and oxidizing it with alumina (Al 2 O 3), which is an oxide of aluminum (Al), is formed. The copper plating layer 220 is positioned at a portion where the 230 is not formed.

For reference, the copper plating layer 220 may be plated using a metal and a metal alloy other than copper.

In addition, the copper plating layer 220 according to the present embodiment, in order to improve the adhesion of the copper plating layer 220 formed on the aluminum layer 210, the first copper cyanide (copper cyanide) layer on the aluminum layer 210 The copper sulfide layer may be formed by sequentially plating a copper sulfide layer plated with a sulfuric acid bath on the blue copper layer. In this case, the aluminum layer may further include a cyanide copper strike layer that is strike-plated on the aluminum layer 210 before the copper layer is plated. It is also possible to further improve the bonding between the 210 and the cyanide copper layer plated thereon.

The chromium layer 240 is formed on the surface of the copper plating layer 220, and the chromium layer 240 may be formed by plating the surface of the copper plating 220.

Hereinafter, a plating method for producing the above-described plating structure will be described.

9 to 12 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

First, referring to FIG. 9, an aluminum layer 210 to be plated is provided, and the photosensitive film 250 is evenly applied thereon. The coated photoresist 250 may be patterned in a pattern desired by a manufacturer by a photolithography process.

The process of patterning the photoresist film by the photolithography process was described in detail with reference to FIGS. 3 and 4 in Example 1, and may be omitted in this embodiment.

As shown in FIG. 10, after the patterned photoresist 255 is formed, the oxide layer 230 is formed as shown in FIG. 11 with the patterned photoresist 255 intact. The oxide layer 230 is formed using an anodizing method on the aluminum layer 210 exposed between the patterned photoresist 255 as shown in FIG. 11.

Thereafter, the patterned photoresist 255 is removed, and a copper plating layer 220 is formed on the surface of the alumina layer 210 exposed between the oxide layers 230.

In this case, a process of forming a film on the surface of the oxide layer 230 may be further performed to prevent the copper plating layer 220 from being formed on the surface of the oxide layer 230.

The copper plating layer 220 may be formed through a general plating method. In the present embodiment, the copper plating layer 220 is limited to the copper plating layer 220. However, in some cases, the plating layer of various materials may be formed using other metals and alloys in addition to the copper plating layer 220. It may be formed.

As described above, in the case where the copper plating layer 220 formed on the aluminum layer 210 includes a blue copper strike layer, a blue copper layer, and a plurality of plating layers in which copper chloride or copper sulfide layers are sequentially formed, Each layer can be formed by plating sequentially.

Thereafter, a separate plating layer may be formed on the surface of the copper plating layer 220 to complete the plating structure 200 according to the second embodiment of the present invention shown in FIG. 8, in this embodiment using chromium. The chromium layer 240 is formed. The chromium layer 240 is preferably formed using a plating method, and for example, a sulphate bath chromium plating method and a chromium chloride chromium plating method may be used, which are representative methods for forming a chromium plating layer.

The plating structure 200 manufactured by the plating method as described above is easy to color the oxide layer 230 can be widely used in places such as precious metals and accessories.

In addition, the plating structure 200 may not only form an oxide layer 230 having strong durability and wear resistance by using an anodizing method, but also form a separate chromium layer 240 on the metallic plating pattern, that is, the copper plating layer 220. This can solve the weak gloss problem.

In addition, the chromium layer 240 having a strong bond with the oxide layer 230 may be formed on the oxide layer 230 by using chromium on the trend that the use of nickel is limited due to the harmfulness of nickel in recent years.

In addition, a predetermined height difference may occur between the oxide layer 230, the copper plating layer 220, and the chromium layer 240 formed by anodizing the aluminum layer 210 to provide a three-dimensional plating structure 200.

Example 3

13 is a cross-sectional view of a plating structure according to another embodiment of the present invention.

Referring to FIG. 13, the plating structure 300 includes an aluminum layer 310, a copper plating layer 320, an oxide layer 335, and a chromium layer 340.

In the plating structure 300 of the present embodiment, the aluminum layer 310 is not only pure aluminum but also aluminum alloy, magnesium (Mg), tin (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf) and niobium ( Nb) can be used by forming any one of metal materials or alloys.

On the surface of the above-described aluminum layer 310, an oxide layer 335 having a predetermined pattern formed by anodizing the aluminum layer 310 and oxidizing it with alumina (Al 2 O 3), which is an oxide of aluminum (Al), is formed. The copper plating layer 320 is positioned at a portion where the 335 is not formed.

For reference, the copper plating layer 320 may be plated using a metal and a metal alloy other than copper.

In addition, the copper plating layer 320 according to the present embodiment, in order to improve the adhesion of the copper plating layer 320 formed on the aluminum layer 310, on the aluminum layer 310, a first copper cyanide (copper cyanide) layer The copper sulfide layer may be formed by sequentially plating a copper sulfide layer to be plated with a sulfuric acid bath on the blue copper layer. In this case, the aluminum layer may further include a cyanide copper strike layer that is strike-plated on the aluminum layer 310 before the blue copper layer is plated. It is also possible to further improve the bonding between the 310 and the cyanide copper layer plated thereon.

The chromium layer 340 is formed on the surface of the copper plating layer 320, and the chromium layer 340 may be formed by plating the surface of the copper plating 320.

Hereinafter, a plating method for simultaneously performing plating and anodizing on a metal layer will be described.

14 to 18 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

First, referring to FIG. 14, an aluminum layer 310 to be plated is provided, and as shown in FIG. 15, a photosensitive film 350 is coated on the aluminum layer 310.

Thereafter, as shown in FIG. 16 using a laser, the photoresist film 350 is partially etched to form a patterned photoresist film 355.

In this case, the anodizing layer 330 may be partially etched while the patterned photoresist 355 remains as it is, to form an oxide layer 335 having a predetermined pattern as shown in FIG. 17.

For reference, in the present embodiment, the photoresist is removed using a laser, but in some cases, the oxide layer 335 having the same pattern may be formed through a silk screen method or a spray injection method.

In addition, as shown in FIG. 17, in the process of partially etching the anodizing layer 330, anodizing is simultaneously performed by simultaneously etching the aluminum layer 310 made of pure aluminum positioned under the etched anodizing layer 330. The height difference is formed between the portion from which the layer 330 is removed and the surface of the aluminum layer 310 not removed, and the height difference between the copper plating layer 220 and the chromium layer 240 and the oxide layer 335 will be described later. It can happen more clearly. This may provide a plating structure 300 with a sense of volume.

Thereafter, as shown in FIG. 18, the copper plating layer 320 is formed on the aluminum layer 310 exposed between the oxide layers 335 while the patterned photoresist 355 is still present.

The copper plating layer 320 may be formed through a general plating method. In the present embodiment, the copper plating layer 320 is limited to the copper plating layer 320. In some cases, the plating layer of various materials may be formed by using other metals and alloys in addition to the copper plating layer 320. It may be formed.

As described above, in the case where the copper plating layer 320 formed on the aluminum layer 310 is composed of a cyanide copper strike layer, a cyanide copper layer, and a plurality of plating layers in which copper chloride or copper sulfide layers are sequentially formed, Each layer can be formed by plating sequentially.

Thereafter, by forming a separate plating layer on the surface of the copper plating layer 320 in the state where the patterned photoresist 355 is still present, the patterned photoresist 355 is removed, thereby removing the patterned photoresist 355. The plating structure 300 according to the embodiment can be completed, and in this embodiment, the chromium layer 340 is formed using chromium.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a cross-sectional view of a plating structure according to an embodiment of the present invention.

2 to 7 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

8 is a cross-sectional view of a plating structure according to another embodiment of the present invention.

9 to 12 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

13 is a cross-sectional view of a plating structure according to another embodiment of the present invention.

14 to 18 are views for explaining a plating method for manufacturing the plating structure shown in FIG.

<Description of the symbols for the main parts of the drawings>

100: plating structure 110: aluminum

120: copper plating layer 130: oxide layer

140: chromium layer 150: photosensitive film

155: Patterned photosensitive film 160: Mask

170, 27: chromium sulfate layer 180, 280: chromium floating film

220: Tsinghua copper strike floor 230: Tsinghua copper strike floor

Claims (16)

In the plating method for simultaneously performing plating and anodizing on a metal layer, Forming a metal pattern on the metal layer; And Partially anodizing the metal layer exposed around the metal pattern to form an oxide layer; Plating method comprising a. The method of claim 1, The metal pattern is, And forming a masking film on the metal layer by using a masking material, and then plating the masking film on a portion where the masking film is removed. The method of claim 2, Before forming the metal pattern, removing the exposed metal layer by a predetermined depth from the masking film. The method of claim 1, The metal pattern is, Forming a patterning layer on the metal layer, Applying a masking material on the patterning layer to form a masking film, And the masking material and the patterning layer are removed together to correspond to the metal pattern. The method of claim 4, wherein And when removing the masking material and the patterning layer, removing the masking material and the metal layer located below the patterning layer together to a predetermined depth. The method of claim 1, Plating method, characterized in that for coloring the oxide layer in the anodizing step. The method of claim 1, Plating method, characterized in that further forming a plating layer on the metal pattern. The method of claim 7, wherein The plating layer is characterized in that the plating using chromium. The method of claim 1, The metal pattern is, A cyanide copper layer plated on the metal layer; And A copper sulfide layer plated on the blue copper layer; Plating method comprising a. 10. The method of claim 9, The cyanide copper layer further comprises a cyanide copper strike layer that is strike-plated on the metal pattern. In the plating method for simultaneously performing plating and anodizing on a metal layer, Forming an anodizing pattern on the metal layer; And Plating a metal layer exposed around the anodizing pattern to form a plating layer; Plating method comprising a. The method of claim 11, The anodizing pattern, And forming a masking film on the metal layer using a masking material, and then anodizing the metal layer exposed to the portion where the masking film is removed. The method of claim 11, The anodizing pattern, Anodizing the entire surface of the metal layer, A masking film is formed on the anodized portion using a masking material, And the anodized portion exposed to the portion from which the masking film is removed is formed by removing the anodized portion. The method of claim 11, The anodizing pattern, Anodizing the entire surface of the metal layer, A masking film is formed on the anodized portion using a masking material, Removing the masking film to correspond to the anodizing pattern, The plating method, characterized in that formed by removing the anodized portion exposed to the removed portion of the masking film. The method according to claim 13 or 14, And when removing the anodized portion, removing the metal layer located below the anodized portion to be removed to a predetermined depth. 18. A plating structure manufactured according to the plating method of any one of claims 1 to 16.

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