KR20100080610A - 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 다수의 버스바 - Google Patents
반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 다수의 버스바 Download PDFInfo
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- KR20100080610A KR20100080610A KR1020107010742A KR20107010742A KR20100080610A KR 20100080610 A KR20100080610 A KR 20100080610A KR 1020107010742 A KR1020107010742 A KR 1020107010742A KR 20107010742 A KR20107010742 A KR 20107010742A KR 20100080610 A KR20100080610 A KR 20100080610A
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- thick film
- glass
- silver
- glass frit
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- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98086107P | 2007-10-18 | 2007-10-18 | |
| US60/980,861 | 2007-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100080610A true KR20100080610A (ko) | 2010-07-09 |
Family
ID=40297687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107010742A KR20100080610A (ko) | 2007-10-18 | 2008-10-17 | 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 공정: 다수의 버스바 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090101210A1 (fr) |
| EP (1) | EP2191481A1 (fr) |
| JP (1) | JP2011502345A (fr) |
| KR (1) | KR20100080610A (fr) |
| CN (1) | CN101816048A (fr) |
| TW (1) | TW200933654A (fr) |
| WO (1) | WO2009052364A1 (fr) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101384756B (zh) * | 2006-03-01 | 2011-11-23 | 三菱瓦斯化学株式会社 | 采用液相生长法的ZnO单晶的制造方法 |
| US20110180138A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| US20110180139A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| US9390829B2 (en) * | 2010-01-25 | 2016-07-12 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| JP5569094B2 (ja) * | 2010-03-28 | 2014-08-13 | セントラル硝子株式会社 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
| CN102456427A (zh) * | 2010-10-30 | 2012-05-16 | 比亚迪股份有限公司 | 一种导电浆料及其制备方法 |
| CN102103895B (zh) * | 2010-11-23 | 2012-02-29 | 湖南威能新材料科技有限公司 | 一种太阳能电池正面电极及栅线用银浆料及其制备方法和含该银浆料制备的太阳能电池 |
| US9224517B2 (en) | 2011-04-07 | 2015-12-29 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| KR101217206B1 (ko) | 2011-04-22 | 2012-12-31 | 엔젯 주식회사 | 소수성 물질을 이용한 전면전극 형성 방법 및 태양전지의 전면전극 형성방법 |
| CN102842638B (zh) * | 2011-06-21 | 2015-04-15 | 新日光能源科技股份有限公司 | 太阳能电池及其制造方法 |
| ZA201208302B (en) * | 2011-11-09 | 2014-10-29 | Heraeus Precious Metals Gmbh | Thick film conductive composition and use thereof |
| DE102011056632A1 (de) * | 2011-12-19 | 2013-06-20 | Schott Solar Ag | Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle |
| JP2013243279A (ja) | 2012-05-22 | 2013-12-05 | Namics Corp | 太陽電池の電極形成用導電性ペースト |
| EP2750141B1 (fr) * | 2012-12-28 | 2018-02-07 | Heraeus Deutschland GmbH & Co. KG | Pâte électroconductrice comprenant des particules d'oxyde inorganiques grossières dans la préparation d'électrodes pour cellules solaires MWT |
| US20160204303A1 (en) * | 2013-08-21 | 2016-07-14 | Gtat Corporation | Using an active solder to couple a metallic article to a photovoltaic cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378408A (en) * | 1993-07-29 | 1995-01-03 | E. I. Du Pont De Nemours And Company | Lead-free thick film paste composition |
| GB0108887D0 (en) * | 2001-04-09 | 2001-05-30 | Du Pont | Conductor composition III |
| US20030178057A1 (en) * | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
| EP1560227B1 (fr) * | 2003-08-08 | 2007-06-13 | Sumitomo Electric Industries, Ltd. | Pate conductrice |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
-
2008
- 2008-10-17 JP JP2010530139A patent/JP2011502345A/ja not_active Withdrawn
- 2008-10-17 KR KR1020107010742A patent/KR20100080610A/ko not_active Application Discontinuation
- 2008-10-17 WO PCT/US2008/080290 patent/WO2009052364A1/fr active Application Filing
- 2008-10-17 CN CN200880110514A patent/CN101816048A/zh active Pending
- 2008-10-17 EP EP08840280A patent/EP2191481A1/fr not_active Withdrawn
- 2008-10-20 US US12/254,277 patent/US20090101210A1/en not_active Abandoned
- 2008-10-20 TW TW097140252A patent/TW200933654A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101816048A (zh) | 2010-08-25 |
| WO2009052364A1 (fr) | 2009-04-23 |
| US20090101210A1 (en) | 2009-04-23 |
| TW200933654A (en) | 2009-08-01 |
| JP2011502345A (ja) | 2011-01-20 |
| EP2191481A1 (fr) | 2010-06-02 |
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| Date | Code | Title | Description |
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| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |