KR20100075733A - Method of forming fine pattern - Google Patents

Abstract

PURPOSE: A method of forming fine pattern is provided to prevent a pattern shape form being thin while having small deviation of the pattern. CONSTITUTION: A transfer layer pattern(3) is formed as an uneven surface by pressing a mold to a resin layer coated on a transfer layer base material. A target pattern forming layer(4) is formed in the uneven surface in which the transfer layer pattern is formed. A substrate is attached to a side without the transfer layer pattern of a target pattern forming layer. The transfer layer base material and transfer layer pattern are removed.

Description

Formation method of fine pattern {METHOD OF FORMING FINE PATTERN}

The present invention relates to a method of forming a fine pattern, and more particularly, to a method of forming a fine pattern using a nanoimprint technique.

Nanoimprint is one of the methods of forming a fine pattern for forming sub-micron fine lines. Nanoimprint is a mold ("stamper") that has a nano pattern formed by coating a thermoplastic resin or a photocurable resin on an etching target film formed on a substrate and forming a quartz or silicon wafer on the resin film. In some cases), the pattern on the mold is transferred onto the resin film by pressing at a high pressure. Thereafter, the mold is removed, and the completed resin pattern is ashed or the like to remove unnecessary residual film to form a mask on the etching target film. Thereafter, the etching target film is etched by the dry etching or the like with this mask to form a pattern (for example, Patent Document 1 and the patent document 2 are used for using a thermoplastic resin, for example).

Further, as a method of forming a fine pattern such as a line width of several tens of nanometers, there is a method using nanoimprint and metal film forming technology. According to this technique, when the resin pattern of the unevenness is formed on the etching target film, and when the metal film is formed on the convex portion of the pattern, the metals stick together on adjacent convex portions so that metal does not flow into the recess of the pattern. Since the structure is completed, the part where the metals on the adjacent convex portions associate with each other by etching the entire surface of the metal film from the state is etched first, so that the metal film remains only on the convex portion, and the concave portion of the uneven pattern is formed. Thereafter, the etching target film is patterned using this as a mask.

[Patent Document 1] Paragraphs 0036 to 0040 of JP2008-233552 A

[Patent Document 2] Paragraphs 0015 to 0020 of JP 2000-194142 A

[Patent Document 3] Japanese Unexamined Patent Publication No. 2008-134383.

In the above-described imprint techniques (Patent Documents 1 and 2), when a resin pattern serving as a mask is formed, a residual film is formed, and this is finally removed to form a mask pattern. For this reason, in order to remove this residual film reliably, excessive ashing process must be performed, and a problem arises, such that a pattern becomes partially thin or an irregular shape (that is, there exists a deviation). In order to reliably remove the thick portion of the residual film, it is necessary to make an appropriate etching amount. In this case, the thick portion of the residual film becomes an appropriate etching amount. It is excessively etched to the part, and the pattern width becomes thin or irregular.

Moreover, even in the technique (patent document 3) which leaves a metal film in a pattern convex part, there exists a deviation of the etching in the thickness of the formed metal film, and the etching of a metal film, and the completed mask pattern itself produces a deviation, no matter how much, and finally completes The resulting pattern may also be irregular.

Tapering and deviation of such a pattern tend to occur especially when the formation area of a fine pattern is large.

Accordingly, it is an object of the present invention to provide a method for forming a fine pattern with less tapering or variation in pattern shape.

The present invention for solving the above object is, pressing the mold on the resin film applied on the transfer layer base substrate, to form a transfer layer pattern consisting of an uneven surface; Forming a pattern forming film on the concave-convex surface constituting the transfer layer pattern; Attaching a substrate to a side where the transfer layer pattern does not exist in the pattern forming film; Removing the transfer layer base substrate and the transfer layer pattern; And forming a fine pattern by etching the patterned forming film to a desired pattern.

Instead of etching the pattern forming film using the transfer layer pattern formed by pressing the mold as a mask, the pattern of the transfer layer pattern is copied to the pattern forming film by forming the pattern forming film on the transfer layer pattern, After removing the transfer layer pattern, the patterned formation film is patterned so as to be a simulated pattern. Therefore, when the transfer layer pattern is formed, the step of removing the residual film, etc. becomes unnecessary and unexpectedly thinning the pattern obtained in the final pattern. However, the deviation can be reduced.

Moreover, in order to solve the said objective, this invention presses a mold to the resin film apply | coated on the transfer layer base base material, forms the transfer layer pattern which consists of an uneven surface, and forms a metal film only on the convex part surface of the said transfer layer pattern. Thereby preparing a transfer layer pattern substrate; Forming a pattern forming film on the substrate, and preparing a pattern forming substrate having a resin film formed on the pattern forming film; Bonding the metal film of the transfer layer pattern substrate to the resin film of the pattern forming substrate to be in close contact with each other; Removing the transfer layer base substrate and the transfer layer pattern of the transfer layer pattern substrate; And removing the transfer layer base substrate and the transfer layer pattern to etch the pattern forming film using a metal film remaining on the resin film of the pattern forming substrate as a mask.

The resin film on the pattern forming film is prepared by preparing a transfer layer pattern substrate having a metal film on the convex portion of the transfer layer pattern formed by pressing the mold and a pattern forming substrate on which the resin film is formed on the pattern forming film, and bonding them together. Since the metal film is simulated and the patterned film is etched using the metal film as a mask, the step of removing the residual film is unnecessary at the time of formation of the transfer layer pattern, and the etching is performed using the metal film as a mask. The variation of the final pattern is small, and the tapering and variation of the pattern obtained unexpectedly can be reduced.

According to the present invention, the tapering and variation of the pattern shape can be reduced. Therefore, even if the pattern formation area is widened, a fine fine pattern can be formed.

Best Mode for Carrying Out the Invention Embodiments of the present invention will be described below with reference to the accompanying drawings.

( Example  One)

1 to 6 are explanatory views for explaining the pattern formation method according to the first embodiment in the order of process.

First, as shown in FIG. 1, the transfer layer resin 2 is apply | coated to the transfer layer base base material 1 similarly to a normal nanoimprint. Here, when using the photonanoimprint method, the transfer layer resin 2 uses photocurable resin, specifically, negative resist by UV curable resin. On the other hand, when the thermal nanoimprint method is used, a thermoplastic resin, specifically, for example, polymethyl methacrylate resin (PMMA) is used. In this embodiment, any method may be used.

The mold 11 in which the pattern is formed is pressed to apply | coated transfer layer resin 2, and it hardens. In the case of the photonanoimprint method, UV-curable resin is irradiated with ultraviolet rays to harden to fix an uneven transfer layer pattern. In the thermal nanoimprint method, the transfer layer resin 2 is heated together with the transfer layer base substrate 1 to press the mold 11 to form a transfer layer pattern, and then cooled (set to room temperature) and cured.

In the first embodiment, the pressurization pressure of the mold 11 does not have to be high pressure (for example, 15 MPa or the like) as in the conventional nanoimprint technique. In the present Example 1, the pattern formed by this nanoimprint is not used as a mask like the process mentioned later. Therefore, it is not necessary to remove the residual film of the pattern recess, so that it is not necessary to pressurize it at high pressure in order to make the residual film thin.

In addition, the thickness of the transfer layer resin 2 is not particularly limited, but if the thickness is too thick, it takes longer in the removal step to be described later. Therefore, the transfer layer resin 2 is appropriately determined in consideration of throughput and formation of the step. In addition, the preferable shape of a transfer layer pattern is mentioned later.

Here, the transfer layer base substrate 1 may be formed by depositing SiO ₂ on the surface of glass, silicon wafer, polyethylene terephthalate (PET), or the like, but the transfer layer resin 2 formed thereon. After hardening, it is preferable not to adhere firmly. This is to easily peel off the transfer layer base base material 1 from the photocurable resin after hardening in the process mentioned later.

For this reason, it is preferable that these material surfaces are surface-treated. The thickness of this transfer layer base base material 1 is not specifically limited.

The mold material is, for example, quartz, a silicon wafer, a nickel pole mold, or the like. Moreover, in order to make peelability of the photocurable resin and the mold 11 after pattern formation favorable, the mold material is carrying out a mold release process, or apply | coating a peeling material to the mold surface.

Next, as shown in FIG. 2, the mold 11 is removed. Thereby, the transfer layer pattern 3 which consists of an unevenness | corrugation is completed on the transfer layer base base material 1 (in addition, in the figure, it is the recessed part 31 and the convex part 35). At this time, although the residual film 32 exists in the bottom of the recessed part 31, it is not necessary to remove it.

Next, as shown in FIG. 3, the pattern forming film 4 is formed on the transfer layer pattern 3. As a result, the pattern forming film 4 in which the pattern of the transfer layer pattern 3 is directly simulated is formed.

This pattern formation film 4 is a metal film, for example. A sputtering method, a vacuum deposition method, an ion plating method, or the like can be used to form the patterned film 4. This pattern forming film 4 is a film (layer) formed in a final pattern as will be described later.

At this time, the pattern formation film 4 formed on the transfer layer pattern 3 adheres to the top of the convex part 35 on the transfer layer pattern 3 for the first time, and film forming advances. For this reason, growth of the to-be-formed film 4 which started from the top of the adjacent convex part 35 associates between convex part 35 comrades, and as shown in figure, to the inside of the concave part 31. As shown in FIG. It does not go in.

In order to obtain the shape of such a pattern formation film 4, it is necessary to control the magnitude | size of the opening of the recessed part 31 so that metal may not flow in to the inside. Therefore, it is preferable to form the transfer layer pattern 3 on the following conditions. First, as shown in FIG. 2, while the aspect ratio t / w of the opening width w and the depth t of the recessed part 31 is 1 or more, the opening width w of the recessed part 31 is 40 nm. It is preferable that it is to 160 nm. In addition, when the opening is less than 40 nm, separation of the convex portions 35 is not substantially performed well, and growth from adjacent convex portions is not preferable, which is not preferable. On the other hand, when it becomes wider than 60 nm, since metal particle flows in into the recessed part and it does not become a pattern as shown in FIG. 2, it is unpreferable.

Therefore, the size of the opening of the nano-order is such that even if the opening is larger than the diameter of the metal particles, the metal particles hardly penetrate the bottom portion of the recess 31. In addition, by setting the aspect ratio to 1 or more, preferably 1.5 or more, the metal does not enter the concave portion 31 reliably, so that the metal grown on the adjacent convex portion 35 is associated. In addition, the width | variety wt of the top of the convex part 35 is not specifically limited, What is necessary is just to determine according to the magnitude | size of a desired final pattern. For example, in consideration of the thinning at the time of forming the final pattern, it is generally made thicker by several% than the final pattern, but this may be appropriately selected according to the pattern shape.

The metal film used as the to-be-formed film 4 is Al, Ti, etc., for example. In addition, as long as it is a metal used as a metal wiring used in a semiconductor device, it can use, and it does not specifically limit. Moreover, other than metal, you may form a silicon oxide film, a silicon nitride film, etc., for example. Although the CVD method, PVD method, etc. are mentioned as a formation method, the method of performing step coverage favorably is preferable. This is because, as described above, the patterned formation film 4 needs to grow from adjacent convex portions 35 to form an interface associated therebetween. Because it is not created. Specifically, for example, a normal temperature atmospheric pressure CVD method or the like which advances SiH ₄ at a relatively low temperature (for example, about 200 to 400 ° C.) may be used.

Next, as shown in FIG. 4, the board | substrate 6 is stuck by the adhesive bond layer 5 on the to-be-formed film 4, ie, the side where the transfer layer pattern 3 does not exist.

Here, the substrate 6 may be, for example, a film formed of SiO ₂ on glass, silicon wafer, PET surface, polycarbonate, polyethylene naphthalate (PEN), quartz, sapphire, or the like. Since the board | substrate 6 becomes a final product here, it is a material matched with the product, and the thing of favorable adhesiveness with a metal (strictly material which can be adhere | attached by an adhesive agent) is used.

Examples of the adhesive layer 5 include a UV curable adhesive, a UV curable resin, a thermosetting adhesive, and the like. In addition, any adhesive strength obtained when the pattern forming film 4 and the substrate 6 are pasted may be obtained. It may be. However, when wet etching is used in the process of etching the patterned film 4 to be described later, resistance to etching liquid is required.

Next, as shown in FIG. 5, the transfer layer base substrate 1 and the transfer layer pattern 3 are removed. Thereby, the transfer layer base base material 1 is peeled off from the transfer layer pattern 3, and then, the transfer layer pattern 3 is removed by plasma treatment such as oxygen plasma ashing, and the pattern forming film 4 ) Surface.

When the adhesive layer 5 and the transfer layer pattern 3 use different materials, the transfer layer pattern 3 is dissolved (wet etched) and removed by a solvent in which the adhesive layer 5 is not dissolved. You may also

Next, as shown in FIG. 6, the to-be-formed film 4 is etched and the final pattern 7 is formed. In addition, FIG. 6 showed the upside down with respect to FIGS.

At this time, isotropic dry etching or wet etching can be used. The etching amount is controlled by time. Here, as described above, the pattern formation film 4 has an interface (dashed line portions in FIGS. 4 and 5) of the portions associated in the convex portions 35 of the transfer layer pattern 3 at other portions. It is easy to be etched because it is low in density. For this reason, by performing isotropic dry etching or wet etching, etching advances from an interface part, and the final pattern 7 shown in FIG. 6 is obtained. In order to control the etching amount, the substrate 6 is generally exposed at the interface portion, and the remaining final pattern 7 may be a desired line width.

Both dry etching and wet etching can use common semiconductor fabrication techniques. For example, in the case of etching of Al, CDE using Cl ₂ / BC 1 ₃ , CF _4, or the like can be used as a dry etching gas. In addition, in the case of wet etching, the etching solution uses an alkaline aqueous solution having a pH of about 12.

According to the first embodiment described above, the nanometer-dimensional pattern can be formed without performing the remaining film removing step of the photocurable resin or the thermoplastic resin in the nanoimprint. In particular, since the residual film is not necessary to be removed, the residual film may be thick or irregular, which is more effective when the pattern formation area is large, and a fine pattern can be formed over the entire large area.

In addition, since the residual film removal step is not necessary and the pattern made of the photocurable resin or the thermoplastic resin does not have to be used as the etching mask, deterioration of the mask shape itself is eliminated in the first place, and the final pattern (which is more uniform than ever) ( 7) can be obtained. In addition, in the first embodiment, since the residual film removal process is not necessary, the residual film itself may be any thickness in the first place. Therefore, high pressure is not required when pressing the mold 11, and the process tact time It is possible to shorten and simplify the apparatus.

In addition, in the present Example 1, this residual film removal process becomes unnecessary, so that even when there is mixing of foreign matters when the photocurable resin or the thermoplastic resin is applied or until the mold is pressed thereafter, It is not influenced by pattern change by this. The pattern formation by the nanoimprint method is naturally performed in a clean room, but even a clean room is unlikely to contain extremely fine foreign materials, for example, foreign materials around 1 μm. On the other hand, since the pattern to be produced is a nano-dimensional (that is, smaller than 1 μm) pattern, even if it is a foreign material around 1 μm, if it is mixed, only the portion of the photocurable resin or the thermoplastic resin becomes thick. The thickness of the residual film by the nanoimprint method is preferably about 30 nm or less. However, even if foreign matters of about 1 μm or more are mixed therewith, in the conventional nanoimprint, even if a high pressure is applied, the foreign material is compressed to retain the residual film thickness. It cannot be made about 30 nm or less. Therefore, there is a fear that the residual film cannot be removed when foreign matter is mixed. In this regard, since the residual film is not required in the first embodiment, even if foreign matter is mixed and exceeds the residual film thickness of 30 nm, the convex portions 35 of the transfer layer pattern 3 are separated. As long as the association interface is formed in the pattern forming film 4 formed thereon, mixing of such foreign matters can be ignored. Therefore, in Example 1, it can be said that resistance to the incorporation of such foreign matter is a higher process than the conventional nanoimprint process. For this reason, this embodiment becomes possible to lower process cost compared with the conventional nanoimprint process.

( Example  2)

In Example 2, Ni is formed only on the top surface of the convex part 35 after the formation of the transfer layer pattern.

7-13 is explanatory drawing for demonstrating the pattern formation method by Example 2 in order of process.

First, in Example 1 described above, the transfer layer pattern 3 is formed by nanoimprinting as shown in FIGS. 1 and 2.

Next, as shown in FIG. 7, the Ni film 21 is formed only on the top surface of the convex portion 32 of the transfer layer pattern 3. In the formation of the Ni film 21, the Ni film 21 can be easily formed only on the top surface of the convex portion 32 of the transfer layer pattern 3 by performing oblique deposition.

In the gradient deposition, as shown in Fig. 7, the surface direction (dotted line shown in the drawing) of the top surface of the convex portion 32 of the transfer layer pattern 3 is different with respect to the flow of Ni particles deposited (dotted arrow shown in the drawing). When it is set to 30 degrees or less (including the case where it becomes a parallel flow), Ni particle | grains do not flow in into the recessed part 31 of the transfer layer pattern 3, and it can form only in a top surface.

11 is a schematic view showing an example of the apparatus configuration for explaining an example of an oblique deposition method.

The vapor deposition apparatus used can use a conventional vacuum vapor deposition apparatus. Therefore, in the vacuum chamber 50 of this apparatus, the transfer layer base base material 1 after formation of the transfer layer pattern is arrange | positioned. At this time, the transfer layer base substrate 1 is placed perpendicular to the cup (deposition source 51) in which the metal serving as the deposition source 51 is placed. As a result, the metal particles evaporated from the vapor deposition source 51 flow almost in parallel with the plane direction of the top surface of the convex portion 35 of the transfer layer pattern 3, and a part of the metal particles flows on the top surface of the convex portion 35. Attached.

The thickness of the Ni film 21 to be formed may be extremely thin, for example, it is sufficient if it is about 10-30 nm. This is because in etching of the patterned film 4 to be described later, nickel is hardly etched, so even if it is extremely thin, it sufficiently functions as a mask. In addition, when it is going to form too thick, even if it is oblique deposition, since Ni particle flows in the recessed part 31 and Ni pattern 21 pattern may become thick, it is unpreferable. Therefore, the thickness of the Ni film 21 may be such that it does not adhere to the sidewall of the transfer layer pattern 3.

After formation of the Ni film 21, as shown in FIG. 8, the film formation film 4 which forms the final pattern 7 is formed after the Ni film 21 of the transfer layer pattern 3 is formed. do. Thereby, similarly to Example 1, the pattern of the transfer layer pattern 3 is simulated in the pattern formation film 4. However, in the second embodiment, the pattern of the transfer layer pattern 3 is copied to the pattern forming film 4, and the Ni film 21 is also copied onto the pattern forming film 4. The pattern forming film 4 is a silicon oxide film, a silicon nitride film, or the like in addition to a metal film such as Al or Ti. Then, the board | substrate 6 is adhere | attached with the adhesive bond layer 5 to the formed pattern formation film 4 similarly to Example 1.

9, the transfer layer base base material 1 is removed and the transfer layer pattern 3 is removed by ashing or the like. As a result, the Ni film 21 remains in the pattern formation film 4.

Next, as shown in FIG. 10, the to-be-formed film 4 is etched using the remaining Ni film 21 as a mask. As a result, the pattern forming film 4 is etched so that the final pattern 8 is formed on the substrate 6. It is preferable that this etching uses anisotropic etching, such as RIE. By using anisotropic etching, the final pattern 8 according to the size (line width or shape) of the Ni film 21 can be obtained accurately as a mask. In addition, since the Ni film 21 after this etching process remains in the same line width and shape as the final pattern 8, it may be left as it is as a fine pattern. In addition, FIG. 10 showed the upside down with respect to FIGS. 6-9.

Also in the present Example 2, the material similar to Example 1 can be used for the transfer layer base base material 1 and the board | substrate 6. On the other hand, the shape conditions of the transfer layer pattern 3 need not necessarily be the same as in the first embodiment. That is, an aspect ratio may be less than 1, and the opening width w of the recessed part 31 may be 160 nm or more. In the second embodiment, the Ni film 21 formed in the transfer layer pattern 3 is transferred onto the pattern-formed film 4, and is etched using this as a mask, so that the Ni film 21 formed on the adjacent convex portion 35 is formed. It is because it is not necessary to form the interface which the film | membrane made to associate.

In the second embodiment described above, the Ni film 21 is formed on the transfer layer pattern 3, and the patterned film 4 is patterned using the Ni film 21 as a mask. The variation of the final pattern 7 is further smaller than in Example 1. Since the mask is used, the degree of freedom of the size and shape of the final pattern to be formed can be increased. Of course, also in the second embodiment, in the case of forming the transfer layer pattern 3 using the nanoimprint as in the first embodiment, the step of removing the residual film is not necessary.

In addition, although the Ni film 21 is formed on the transfer layer pattern 3 here, instead of this, the convex part 35 of the transfer layer pattern 3 like Ti, Mo, W, Cu, etc. is replaced by this. A metal can be formed only on the wafer), and a metal which is not etched when etching the subsequent patterned film 4 can be used.

( Example  3)

In the third embodiment, the formation of the transfer layer pattern by nanoimprint and the step of forming the pattern forming film on the substrate are performed separately, and the pattern forming film is patterned by combining them.

12-16 is explanatory drawing for demonstrating the pattern formation method by Example 3 in order of process.

First, as shown in FIG. 12, the transfer layer pattern substrate 41 is prepared. The transfer layer pattern substrate 41 is formed in the same manner as in the second embodiment, as shown in FIG. 7, to form the transfer layer pattern 3 by nanoimprinting, and to inclined deposition only on the top surface of the convex portion 35. The Ni film 21 is formed by this.

On the other hand, in the third embodiment, as shown in FIG. 13, the pattern forming substrate 4 is directly formed on the substrate 6, and further, the pattern forming substrate on which the UV curable resin film 9 is applied ( Prepare 42). Formation of the to-be-formed film 4 on the board | substrate 6 can use the method used for semiconductor device manufacture. For example, sputtering method, vacuum deposition method, ion plating method, CVD method, PVD method and the like are not particularly limited. The thickness may also be the thickness of the desired final pattern.

The UV curable resin film 9 may be extremely thin, for example, about 30 nm. In addition, this thickness is because the final pattern width to be formed is in nanometer dimension, so the minimum thickness required is sufficient, but even if thicker, it does not interfere. Application | coating of the UV curable resin film 9 can be formed into a film using spin coating method, for example, dissolving UV curable resin in a solvent.

Next, as shown in FIG. 14, the prepared transfer layer pattern substrate 41 and the pattern forming substrate 42 are bonded to each other. The pressure at this time should just be the pressure of the grade which the Ni film | membrane 21 of the transfer layer pattern substrate 41 and the UV curable resin film 9 of the transfer layer pattern substrate 41 adjoin. Thereafter, ultraviolet rays are irradiated to cure the UV curable resin film 9.

Next, as shown in FIG. 15, the transfer layer base substrate 1 is removed, and the transfer layer pattern 3 is removed by ashing or the like. As a result, the Ni film 21 remains on the UV curable resin film 9 on the pattern-formed film 4 formed directly on the substrate 6.

Next, as shown in FIG. 16, the pattern-forming film 4 is etched using the Ni film 21 on the UV curable resin film 9 as a mask, and the final pattern 10 is completed. It is preferable that the etching at this time uses anisotropic etching, such as RIE. By using anisotropic etching, the final pattern 10 according to the size (line width or shape) of the Ni film 21 can be obtained accurately as a mask. The Ni film 21 after this etching process and the UV curable resin film 9 remaining under it may be left as it is, and may be removed. When removing the remaining Ni film 21 and the UV curable resin film 9, first, the Ni film 21 is removed by nitric acid or the like, and then the ashed UV curable resin film 9 is ashed. Can be removed In this case, however, it is necessary to use a material which does not deteriorate when the substrate 6 or the final pattern is removed from the Ni film 21. Of course, if the Ni film 21 can be removed by other methods, it goes without saying that it may be removed.

In addition, here, when etching the pattern forming film 4, it is supposed that the pattern forming film 4 is etched together with the UV curable resin film 9 from the Ni film 21 serving as a mask. Before etching the film 4, the portion exposed from the Ni film 21 of the UV curable resin film 9 may be removed by ashing.

In the third embodiment described above, the Ni film 21 on the transfer layer pattern 3 formed by using nanoimprint is transferred onto the pattern-formed film 4 formed directly on the substrate 6, and this is masked. Since the pattern formation film 4 is to be patterned as described above, similarly to the second embodiment, the final pattern 10 with less pattern deviation can be obtained. In addition, in the third embodiment, since the pattern-forming film 4 can be formed directly on the substrate 6, for example, a product in which metal wiring is directly performed thereon using a semiconductor on the substrate. It is even applicable. Of course, also in the second embodiment, in the case of forming the transfer layer pattern 3 using the nanoimprint as in the first embodiment, the step of removing the residual film is not necessary.

In addition, although the UV curable resin film 9 is formed into a film on the to-be-formed film 4 in Example 3, you may use a thermoplastic resin film instead. In this case, heat is applied to bring the Ni film 21 of the transfer layer pattern substrate 41 and the thermoplastic resin film of the pattern forming substrate 42 into close contact with each other. Thereafter, when the thermoplastic resin film is cured by cooling (restored to room temperature), the Ni film 21 is transferred onto the thermoplastic resin film. In addition, in the third embodiment, it is also possible to use Ti, Mo, W, Cu, or the like instead of the Ni film 21.

( Application example )

As mentioned above, although the preferable Example to which this invention was applied was demonstrated, the example of a product using such a micropattern is demonstrated.

FIG. 17 is a view for explaining an example of the antireflection film formed by using the first embodiment described above. FIG. 17A is a sectional view and FIG. 17B is a plan view seen from the pattern formation surface.

As the antireflection film, a transparent substrate such as PET, polycarbonate, PEN, glass, quartz, sapphire or the like is used as the substrate 6. Transparent UV curable resin etc. are used also for the adhesive bond layer 5. Then, SiO ₂ was used for blood pattern forming film (4) is a fine pattern. The formed pattern is a structure in which circular patterns are densely aligned, as shown. The diameter of the circle is formed in accordance with the wavelength to reflect. For example, in the case of visible light, it is 100 nm in diameter.

By using the first embodiment, such circular fine patterns can be densely densified and the variation in the size thereof can be reduced. In addition, the etched final pattern 7 has the apex as shown in the drawing, from the characteristic of etching the patterned film 4 from the associating interface without using a mask, which is a feature of Example 1. It has a round structure (a roundish shape). Such a round structure has a structure in which the refractive index of the film surface is continuously changed when light is incident on the antireflection film, thereby preventing reflection and increasing transmittance.

FIG. 18 is a view for explaining an example of a photonic crystal formed by using the first embodiment described above. FIG. 18A is a sectional view and FIG. 18B is a plan view seen from the pattern formation surface. .

This photonic crystal uses a high transparency substrate such as glass, quartz, sapphire or the like as the substrate 6. UV curable resin with high transparency is used also for the adhesive bond layer 5. And Si was used for the to-be-formed film 4 which turns into a fine pattern. The formed pattern is a structure in which rectangular (square) patterns are aligned as shown in the figure. The size of a rectangle is 100 nm in both sides, and 100 nm in spacing.

By using the first embodiment, such a rectangular fine pattern can be formed with less variation. Thus, a photonic crystal can be obtained that strictly transmits or shields a specific wavelength.

FIG. 19 is a view for explaining an example of a wire grid polarizer formed using the above-described second embodiment, FIG. 19 (a) is a sectional view, and FIG. 19 (b) is viewed from a pattern formation surface. Top view.

The wire grid polarizer uses transparent substrates such as PET, polycarbonate, PEN, glass, quartz, sapphire, and the like as the substrate 6. As the adhesive layer 5, a transparent UV curable resin or the like is used. And as the to-be-formed film 4 which turns into a fine pattern, metal films, such as Al and Ti, are preferable.

Such a wire grid polarizer needs to form the line and space (line width and space | interval) of the polarization grating part produced | generated by the final pattern 8 according to the wavelength. For example, it is 50 nm in the case of visible light. By applying and forming this Example 2, this dispersion | polarization gap of this polarization grating becomes very small and it is possible to exhibit the outstanding function as a polarizing plate.

In addition, this wire grid polarizer may use the method of Example 3. As shown in FIG. In that case, it is possible to form the final pattern 8 which becomes a polarization grating directly on transparent substrates, such as PET, polycarbonate, PEN, glass, quartz, sapphire, etc. as the board | substrate 6.

As mentioned above, although the Example which used this invention suitably was demonstrated, it cannot be overemphasized that this invention is possible in various modified forms in the range of the technical thought described in the claim of this application.

1 is an explanatory diagram for explaining the pattern formation method according to the first embodiment of the present invention in the order of process.

FIG. 2 is an explanatory diagram for explaining a pattern forming method according to Example 1 following FIG. 1 in order of process.

FIG. 3 is an explanatory diagram for explaining a pattern forming method according to Example 1 following FIG. 2 in order of process.

FIG. 4 is an explanatory diagram for explaining a pattern forming method according to Example 1 following FIG. 3 in order of process.

FIG. 5 is an explanatory diagram for explaining a pattern forming method according to Example 1 following FIG. 4 in order of process.

FIG. 6 is an explanatory diagram for illustrating a pattern forming method according to Example 1 following FIG. 5 in order of process.

7 is an explanatory diagram for explaining the pattern formation method according to the second embodiment of the present invention in order of process.

FIG. 8 is an explanatory diagram for explaining a pattern forming method according to Example 2 subsequent to FIG. 7 in order of process.

FIG. 9 is an explanatory diagram for explaining a pattern forming method according to Example 2 subsequent to FIG. 8 in order of process.

FIG. 10 is an explanatory diagram for explaining a pattern forming method according to Example 2 subsequent to FIG. 9 in order of process.

11 is a schematic view showing an example of the apparatus configuration for explaining an example of an oblique deposition method.

12 is an explanatory diagram for explaining a pattern formation method according to Example 3 in order of process.

FIG. 13 is an explanatory diagram for explaining a pattern forming method according to Example 3 following FIG. 12 in order of process;

FIG. 14 is an explanatory diagram for explaining a pattern forming method according to Example 3 following FIG. 13 in order of process.

FIG. 15 is an explanatory diagram for illustrating a pattern forming method according to Example 3 following FIG. 14 in order of process.

FIG. 16 is an explanatory diagram for explaining a pattern forming method according to Example 3 subsequent to FIG. 15 in order of process.

17 is a diagram for explaining an example of an antireflection film formed using the first embodiment.

18 is a diagram for explaining an example of a photonic crystal formed using Example 1. FIG.

19 is a diagram for explaining an example of a wire grid polarizer formed using the second embodiment.

<Description of the code>

1: transfer layer base base material 2: transfer layer resin

3: transfer layer pattern 4: pattern forming film

5: adhesive layer 6: substrate

7, 8, 10: final pattern 11: mold

21: Ni film 31: recessed portion

35: convex

Claims (4)

Pressing a mold onto the resin film coated on the transfer layer base substrate to form a transfer layer pattern formed of an uneven surface; Forming a pattern forming film on the uneven surface of the transfer layer pattern; Attaching a substrate to a side where the transfer layer pattern does not exist in the pattern forming film; Removing the transfer layer base substrate and the transfer layer pattern; And And forming a fine pattern by etching the patterned forming film to a desired pattern. The method of claim 1, wherein the forming of the pattern forming film comprises: growing the pattern forming film from a convex portion of the transfer layer pattern to have an interface associated between adjacent convex portions. Including, Forming the fine pattern, the method of forming a fine pattern comprising the step of proceeding the etching at the interface, the desired pattern width. The method of claim 1, further comprising forming a metal film only on the convex portion of the transfer layer pattern after forming the transfer layer pattern formed of the uneven surface. The forming of the fine pattern may include etching the pattern forming film by using the metal film remaining on the pattern forming film as a mask by removing the transfer layer base substrate and the transfer layer pattern. Method for forming a fine pattern characterized in that. Preparing a transfer layer pattern substrate by pressing a mold onto the resin film applied on the transfer layer base substrate to form a transfer layer pattern formed of an uneven surface, and forming a metal film only on the convex portion of the transfer layer pattern; Forming a pattern forming film on the substrate, and preparing a pattern forming substrate having a resin film formed on the pattern forming film; Bonding the metal film of the transfer layer pattern substrate to the resin film of the pattern forming substrate to be in close contact with each other; Removing the transfer layer base substrate and the transfer layer pattern of the transfer layer pattern substrate; And And removing the transfer layer base substrate and the transfer layer pattern to etch the pattern forming film using a metal film remaining on the resin film of the pattern forming substrate as a mask.

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