JP2006278879A - Method of manufacturing stamper - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a stamper which is capable of manufacturing the stamper of detailed uneven pattern efficiently with a high accuracy. <P>SOLUTION: A conductive film is deposited on a transfer surface 10A with predetermined irregular patterns by irradiating particles of conductive material, while relatively tilting the direction of irradiation at least relatively against the normal line Ln of the surface of original board 10 and irradiating the particles of conductive material. The posture of the original board 10 is changed with respect to an irradiating source 32 through a film depositing method for depositing the film, by irradiating the particles linearly into one direction from the irradiating source 32 against the original board 10 having the transfer surface 10A. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a stamper manufacturing method that can be used for manufacturing, for example, semiconductor products and information recording media.

  2. Description of the Related Art Conventionally, in a semiconductor product manufacturing process, a technique called lithography is used in which a resin resist layer is formed on a layer to be processed, and this is exposed and developed to process it into a concavo-convex pattern. The layer to be processed can be processed into a predetermined uneven pattern by etching the layer to be processed using the resist layer having the uneven pattern as a mask. In recent years, processing of fine concavo-convex patterns with a pitch of several hundred nm or less has been required. However, when such fine concavo-convex patterns are formed, the influence of the wavelength of light used for exposure cannot be ignored. Therefore, an electron beam may be used for exposure. However, the method of performing exposure (drawing) for each semiconductor product using an electron beam has a problem that productivity is low.

  On the other hand, a method called an imprint method is known in which a stamper is brought into contact with a resin layer to transfer a concavo-convex pattern (see, for example, Patent Document 1). In addition, when transferring a fine uneven | corrugated pattern whose pitch is several hundred nm or less, it may be especially called a nanoimprint method. By simply transferring the concavo-convex pattern by contacting the stamper, the resin layer remains at the bottom of the recess and the layer to be processed is not exposed, but the resin layer is etched uniformly enough to remove the resin layer at the bottom of the recess. The layer to be processed can be exposed from the bottom of the recess, and the resin layer can be used as a mask corresponding to the transferred uneven step.

  According to the imprint method, productivity can be significantly increased compared to lithography using an electron beam for each product, and in the field of magnetic recording media such as hard disks due to the following circumstances. Improvement of productivity by such an imprint method is expected.

  In magnetic recording media, the surface recording density has been remarkably improved by the refinement of the magnetic particles constituting the recording layer, the change of materials, the refinement of the head processing, and the like. Is expected.

  However, problems such as incorrect information recording on other tracks adjacent to the recording target track due to the processing limit of the head and the spread of the magnetic field, crosstalk during reproduction, etc. have become obvious, and surface recording by the conventional improved method The increase in density is at the limit. Therefore, discrete track media and patterned media in which a recording layer is formed in a predetermined uneven pattern have been proposed as candidates for magnetic recording media that can achieve a further increase in surface recording density (for example, Patent Documents). 2).

  As a processing technique for processing the recording layer into a concavo-convex pattern, dry etching techniques such as ion beam etching and reactive ion etching can be used, and the recording layer is efficiently processed into a concavo-convex pattern using an imprint method. It is expected that. More specifically, first, one or more mask layers are formed on the continuous recording layer, and a resin layer is formed on the mask layer. Next, the stamper is brought into contact with the resin layer to transfer the uneven pattern to the resin layer, the mask layer is etched using the resin layer as a mask, and the mask layer is processed into the uneven pattern. Furthermore, by removing the continuous recording layer at the bottom of the concave portion of the mask layer by etching, the continuous recording layer can be processed into a recording layer having a predetermined concavo-convex pattern. Depending on the material of the recording layer and the type of dry etching, a resin layer is formed directly on the continuous recording layer, and the continuous recording layer is etched using the resin layer as a mask to be processed into a recording layer having a predetermined uneven pattern. It is also possible.

  By the way, although different from the imprint method, in the field of optical recording media, a stamper is used to form uneven patterns such as pits and grooves on a substrate. Specifically, a stamper is disposed in a mold, and a resin material such as polycarbonate is injection-molded to obtain a substrate on which concave and convex patterns for information transmission such as pits and grooves are formed.

  A method for manufacturing a stamper for an optical recording medium has been established, and an example thereof will be briefly described here. First, a resist material is applied onto a substrate such as glass, and the resist material is exposed and developed by a lithography technique and partially removed to obtain a master having a transfer surface with a concavo-convex pattern. Next, a conductive film is formed on the transfer surface of the master by electroless plating. The electroless plating method is a wet process also called a chemical plating method, but it is also possible to form a conductive film by a dry process such as a sputtering method. Next, an electroplating layer made of Ni (nickel) or the like is formed by electroplating using the electroconductive film as an electrode, and the conductive film and the electroplating layer are integrally peeled off from the master to obtain a stamper (for example, Patent Documents) 3). In order to improve productivity, etc., a conductive film and an electroplating layer integrally peeled off from the master disk may be used as a metal master, and a stamper may be formed on the metal master by an electroplating method. Further, the electrolytic plating method may be repeated one or more times to form another metal master from the metal master.

  Such a stamper manufacturing method established in the field of optical recording media can also be used for manufacturing stampers for semiconductor products and magnetic recording media.

Japanese Patent Laid-Open No. 2003-100609 JP 2000-195042 A Japanese Patent Laid-Open No. 5-205321

  However, when a conductive film is formed on the master, when the electroless plating method, which is a wet process, is used, a number of pretreatment steps such as cleaning are required, resulting in low productivity. In addition, the resist material constituting the convex portion of the master may be deformed in the pretreatment process, or foreign matter may be mixed in the pretreatment process, and the uneven pattern of the master may not be accurately transferred to the stamper or metal master. .

  On the other hand, it is possible to efficiently produce a stamper by forming a conductive film on a master using a sputtering process, which is a dry process. However, in discrete track media and patterned media, the transfer surface has a fine portion including a recess having a width of 100 nm or less. In some cases, a master having a rough pattern is used, and a conductive film is not formed on a part of the transfer surface, or a void is formed in the formed conductive film. In some cases, it was not correctly transferred to the metal master.

  This will be described in more detail with reference to FIG. In the master 100, a resist material 104 is partially formed on a substrate 102, and the resist material 104 constitutes a convex portion of the concavo-convex pattern on the transfer surface 100 </ b> A. In a general sputtering method, ions of a rare gas such as Ar collide with a target from various directions, and individual particles of the target are scattered in various directions, so that the target particles are unidirectional with respect to the workpiece. Is not irradiated linearly. When a conductive film is formed by such a general sputtering method, the conductive film 106 is likely to be deposited near the top of the resist material 104 constituting the convex part or near the bottom of the concave part, but is difficult to deposit on the side surface of the concave part. When the width of the recess is narrow or when the recess is deep, the conductive film may not be formed on a part of the side surface of the recess. When an electroplating layer is formed using such a conductive film 106 as an electrode, the growth of the electroplating layer is suppressed on the side surface of the concave portion, and thus a convex portion having a desired shape cannot be formed on the stamper. That is, the concave / convex pattern on the transfer surface 100A of the master cannot be accurately transferred to the stamper or metal master.

  In contrast, if the conductive film 106 is formed to be thicker, the conductive film 106 can be formed on the entire transfer surface 100A including the side surface of the recess. However, when the width of the recess is narrow, as shown in FIG. Before the conductive film 106 is sufficiently deposited on the side surface of the concave portion, the conductive film 106 deposited near the upper portion of the convex portion and the conductive film 106 deposited near the upper portion of the convex portion adjacent thereto are combined to form the conductive film 106. In some cases, voids may be formed in the interior of the. When the conductive film 106 including such a gap is peeled off from the master, the thin portion near the gap may be damaged, and the original uneven pattern obtained by transferring the uneven pattern on the transfer surface 100A of the master may be damaged. The uneven pattern having a partially broken shape is transferred to the stamper or metal master. Further, even if the stamper or metal master can be peeled without damage, if the stamper or metal master includes a gap inside the convex portion, there is a problem that the durability as the stamper or metal master is remarkably lowered. .

  That is, although a workpiece can be efficiently processed into a predetermined concavo-convex pattern by using a stamper, a stamper is manufactured from a master having a fine concavo-convex pattern including a concave portion with a width of 100 nm or less formed on a transfer surface. In this case, it is difficult to manufacture the stamper itself with high efficiency and high accuracy.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a stamper manufacturing method that can efficiently and accurately manufacture a stamper having a fine concavo-convex pattern.

  The present invention relates to a master by a film forming method in which a film is formed by linearly irradiating particles in one direction from an irradiation source such as an ion beam deposition method onto a master having a transfer surface with a predetermined uneven pattern. The direction of irradiation is at least temporarily inclined relative to the normal of the surface of the substrate and the orientation of the master is changed relative to the irradiation source (for example, the master is rotated relative to the irradiation source). The above object is achieved by irradiating particles of a conductive material and forming a conductive film on the transfer surface.

  Using a film formation method that forms a film by linearly irradiating particles in one direction from an irradiation source such as the ion beam deposition method, the irradiation direction is inclined relative to the normal of the surface of the master. Thus, the conductive film can be reliably formed not only on the top surface of the convex portion and the bottom surface of the concave portion of the concave-convex pattern on the transfer surface but also on the side surface of the concave portion. By forming an electroplating layer by electroplating using this conductive film as an electrode, it is possible to manufacture a stamper or a metal master in which the concave / convex pattern of the master is accurately transferred. Further, if a dry process such as an ion beam deposition method is used as a method for forming the conductive film, it is not necessary to perform many pre-processing steps such as cleaning, so that the productivity of the stamper can be increased accordingly. Furthermore, since the resist material constituting the convex portion of the master is not deformed in the pretreatment process, and foreign matters are not mixed in the pretreatment process, the uneven pattern of the master can be accurately transferred to the stamper or metal master. .

  That is, the above-described object can be achieved by the following present invention.

  (1) At least with respect to the normal of the surface of the master by a film forming method in which a master having a transfer surface with a predetermined concavo-convex pattern is linearly irradiated with particles from an irradiation source in one direction to form a film. The conductive film is formed on the transfer surface by temporarily irradiating the irradiation direction relatively and irradiating the conductive material particles while changing the orientation of the master relative to the irradiation source. A stamper manufacturing method comprising: a conductive film forming step for forming a film; and an electrolytic plating step for forming an electrolytic plating layer on the conductive film by an electrolytic plating method.

  (2) In (1), in the conductive film formation step, the conductive film is formed on the transfer surface while the master is relatively rotated with respect to the irradiation source. Manufacturing method.

  (3) The method for manufacturing a stamper according to (1) or (2), wherein the film forming method in the conductive film forming step is an ion beam deposition method.

  (4) In any one of (1) to (3), in the conductive film forming step, the irradiation direction is inclined at an angle of 40 to 50 ° relative to the normal of the surface of the master. The stamper manufacturing method characterized by the above-mentioned.

  (5) The method for manufacturing a stamper according to any one of (1) to (4), wherein a master having a concavo-convex pattern including a recess having a width of 100 nm or less is formed on the transfer surface as the master.

  (6) In any one of (1) to (5), the electroplating step is used as a first electroplating step, and after the first electroplating step, the conductive film and the electroplating layer are integrated from the master. And a second electrolytic plating step of forming any one of the stamper and the other metal master by an electrolytic plating method on the metal master using the conductive film and the electrolytic plating layer as a metal master, A method for manufacturing a stamper, wherein:

  In this application, the term “normal line on the surface of the master” means the surface normal on the transfer surface side of the master when the master is viewed macroscopically so that the uneven pattern on the transfer surface can be ignored. We will use it.

  Further, in the present application, “irradiating particles linearly in one direction” means that a large number of particles are linearly irradiated almost in parallel in one direction, and all particles are irradiated in one direction. It is not limited to the meaning of irradiating completely in parallel.

  Further, in the present application, the term “ion beam deposition method” is a general term for a film forming method in which particles are linearly irradiated in one direction to a workpiece using an ion beam, and is a material for a film. An ion beam sputtering method in which an ion beam of a rare gas or the like is linearly collided with a target in a predetermined direction to scatter and irradiate target particles on a workpiece, and an ion beam of particles as film materials is irradiated. Includes mass separation method or non-mass separation ion beam method for irradiating a workpiece, cluster ion beam method for clustering particles that are film materials, and irradiating the workpiece with a cluster ion beam We will use it for the purpose. The ion beam sputtering method is different from a general sputtering method in which ions collide with the target from various directions in that the target is irradiated with an ion beam linearly from a predetermined direction (impacts the ions).

  According to the present invention, a stamper having a fine concavo-convex pattern can be manufactured efficiently and with high accuracy.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

  The first embodiment of the present invention relates to a method of manufacturing a stamper 12 from a master 10 having a transfer surface 10A having a predetermined uneven pattern as shown in FIG. The master 10 includes a substrate 14 whose material is silicon, glass, and the like, and a resist material 16 partially formed on the substrate 14, and the resist material 16 has convex portions of the concavo-convex pattern on the transfer surface 10A. It is composed. The uneven pattern on the transfer surface 10A includes a recess having a width of 100 nm or less. The stamper 12 includes a conductive film 18 and an electrolytic plating layer 20.

  A method for manufacturing the stamper 12 will be described with reference to a flowchart shown in FIG.

  First, the master 10 is produced (S102). Specifically, the substrate 14 is washed, a thin film (not shown) of an adhesive material is formed on one surface of the substrate 14, and then the resist material 16 is applied by spin coating. Next, the solvent in the resist material 16 is evaporated and dried by baking, and the film thickness and defects of the resist material 16 are inspected. Further, the resist material 16 is irradiated with a laser beam or an electron beam in a pattern corresponding to the concavo-convex pattern on the transfer surface 10A, and development processing is performed to selectively remove the photosensitive portion or the non-photosensitive portion of the resist material 16 to obtain the master 10. Is obtained.

  Next, the conductive film 18 is formed on the transfer surface 10A of the master 10 by an ion beam deposition method (a film formation method in which a film is formed by linearly irradiating particles from an irradiation source in one direction). (S104). Specifically, the ion beam deposition apparatus 30 as shown in FIG. 3 is used to tilt the irradiation direction relative to the normal line Ln of the surface of the master 10 and rotate the master 10. While changing the posture of the master 10 relative to the irradiation source, the master 10 is irradiated with particles of Ni (conductive material) to form a conductive film 18 on the transfer surface 10A. At this time, it is preferable to tilt the irradiation direction of the Ni particles about 45 ° (within a range of 40 to 50 °) with respect to the normal line Ln of the surface of the master 10.

  Specifically, the ion beam deposition apparatus 30 is an apparatus for forming a thin film by a technique called an ion beam sputtering method in the ion beam deposition method, and includes an irradiation source 32 including a target made of Ni, and an irradiation source. An ion beam generating source 34 for irradiating an Ar ion beam to 32, a holding mechanism 36 for holding the master 10 in a predetermined posture, and a vacuum chamber 38 for housing the irradiation source 32 and the holding mechanism 36, It is equipped with.

  The irradiation source 32 is installed so that the surface of the target made of Ni is inclined with respect to the Ar ion beam irradiated from the ion beam generation source 34, and Ni particles generated by the collision of the Ar ion beam are converted into Ar particles. The ion beam is emitted in a symmetric direction with respect to the incident direction of the ion beam.

  The holding mechanism 36, together with the jig 36A and the jig 36A, can hold the master 10 so that the irradiation direction of the Ni particles irradiated from the irradiation source 32 is inclined with respect to the normal line Ln of the surface of the master 10. And a rotation drive mechanism 36B for rotating the master 10. The rotation drive mechanism 36B is configured to rotate the master 10 around its central axis. The holding mechanism 36 can adjust the angle at which the master 10 is held with respect to the irradiation direction of the Ni particles irradiated from the irradiation source 32.

  The ion beam deposition method is excellent in the directivity of the particles to be irradiated. Further, since the irradiation direction of the Ni particles is relatively inclined with respect to the normal line Ln of the surface of the master 10, the Ni particles As shown in FIG. 4, not only the top surface of the convex portion and the bottom surface of the concave portion of the concavo-convex pattern on the transfer surface 10A but also the side surface of the concave portion is reliably deposited. In the case where the Ni particles exhibit only a completely linear behavior, it is conceivable that the Ni particles do not reach the vicinity of the bottom of the recess, but in reality, Ni particles accumulate also in the vicinity of the bottom of the recess. This is presumably because some of the Ni particles that collided with the side surfaces of the recesses also wrap around the bottom of the recesses. Of the pair of side surfaces of the concave portion, Ni particles may not temporarily reach the side surface opposite to the side surface irradiated with Ni particles or the bottom surface of the concave portion near the bottom portion. As a result of the rotation, Ni particles can be deposited also in such a portion, and the conductive film 18 is reliably formed on the entire transfer surface 10A of the master 10 as shown in FIG.

  Next, an electrolytic plating layer 20 is formed on the conductive film 18 by electrolytic plating as shown in FIG. 6 (S106). Specifically, the master 10 having the conductive film 18 formed on the transfer surface 10A is immersed in a nickel sulfamate solution, and a nickel film is grown by energizing the conductive film 18 as an electrode, and an electroplating layer. 20 is deposited. Since the conductive film 18 is formed on the entire transfer surface 10A of the master 10, the electrolytic plating layer 20 is also reliably formed on the entire transfer surface 10A of the master 10.

  Next, the conductive film 18 and the electrolytic plating layer 20 are integrally peeled from the master 10 (S108). Since the resist material 16 may adhere to the peeled conductive film 18 and the electrolytic plating layer 20, the resist material 16 is removed with an organic solvent, and the outer periphery of the conductive film 18 and the electrolytic plating layer 20 as necessary. The surface of the electrolytic plating layer 20 opposite to the conductive film 18 is polished and then ultrasonically cleaned with ultrapure water. Thereby, the stamper 12 shown in FIG. 1 is completed. The concave / convex pattern of the stamper 12 is opposite to the concave / convex pattern on the transfer surface 10 </ b> A of the master 10.

  As described above, the ion beam deposition method having excellent directivity of the particles to be irradiated is used as the method for forming the conductive film 18 and the irradiation direction is inclined relative to the normal line Ln of the surface of the master 10. Thus, although the concavo-convex pattern on the transfer surface 10A of the master 10 includes a narrow concave portion with a width of 100 nm or less, not only the upper surface of the convex portion and the bottom surface of the concave portion of the concavo-convex pattern on the transfer surface 10A, but also the transfer surface. The conductive film 18 can also be reliably formed on the side surface of the recess of 10A. By forming the electroplating layer 20 by the electroplating method using the conductive film 18 as an electrode, the stamper 12 to which the uneven pattern of the master 10 is accurately transferred can be manufactured.

  In other words, the stamper manufacturing method according to the first embodiment is particularly suitable when a stamper is manufactured from a master having an uneven pattern including a narrow recess having a width of 100 nm or less formed on the transfer surface.

  In addition, the ion beam deposition method, which is a dry process, is used as a method for forming the conductive film 18, and it is not necessary to perform many pretreatment steps such as cleaning, so that productivity is good. Further, since the resist material constituting the convex portion of the master is not deformed in the pretreatment process, and no foreign matter is mixed in in the pretreatment process, the stamper 12 to which the concave / convex pattern of the master 10 is accurately transferred is also used in this respect. Can be manufactured.

  In addition, the conductive film 18 is reliably formed on the side surface of the concave portion of the transfer surface 10A, and the electrolytic plating layer 20 is formed by electrolytic plating using the conductive film 18 as an electrode. Therefore, the stamper 12 is excellent in durability.

  Next, a second embodiment of the present invention will be described.

  In the first embodiment, the conductive film 18 and the electrolytic plating layer 20 are the stamper 12, whereas in the second embodiment, the conductive film 18 and the electrolytic plating layer 20 are used as a metal master, and electrolysis is performed on the metal master. It is characterized by forming a stamper by a plating method.

  Specifically, as shown in the flowchart of FIG. 7, the electrolytic plating step (S106) is used as a first electrolytic plating step, and after the first electrolytic plating step, a stamper is formed on the metal master by electrolytic plating. A second electroplating step (S202) for forming is provided. Since other steps are the same as those in the first embodiment, the same reference numerals as those in the first embodiment are used, and the description thereof is omitted as appropriate.

  First, the master 10 is manufactured in the same manner as in the first embodiment (S102), the conductive film 18 is formed on the master 10 (S104), and the electrolytic plating layer 20 is further formed on the conductive film 18. After forming a film (S106), the conductive film 18 and the electrolytic plating layer 20 are integrally peeled from the master 10 (S108). Thereby, the metal master 50 as shown in FIG. 8 having the same configuration as the stamper 12 is obtained. The resist material 16 is removed with an organic solvent, and the outer periphery of the conductive film 18 and the electrolytic plating layer 20 is punched as necessary to adjust the shape, and the surface of the electrolytic plating layer 20 opposite to the conductive film 18 is polished. Then, ultrasonically clean with ultrapure water.

  Next, after subjecting the surface of the metal master 50 to oxidation as necessary, a stamper 52 is formed by growing a nickel film on the metal master 50 by electrolytic plating as shown in FIG. (S202). Since the concavo-convex pattern of the transfer surface 10A of the master 10 is accurately transferred to the metal master 50, the concavo-convex pattern of the transfer surface 10A of the master 10 is also accurately transferred to the stamper 52. The concave / convex pattern of the stamper 52 matches the concave / convex pattern of the transfer surface 10A of the master 10 with the direction of the concave / convex.

  Further, if a gap is formed inside the convex portion of the metal master 50, the thin portion near the gap may be damaged when the stamper 52 is peeled off. However, the metal master 50 has the convex portion as described above. The metal master 50 is excellent in durability because it is manufactured so as to prevent the formation of voids inside.

  Further, by forming the stamper 52 on the metal master 50 by electrolytic plating, mass production of the stamper 52 is facilitated, which contributes to further improvement in productivity.

  In the second embodiment, the conductive film 18 and the electrolytic plating layer 20 are used as the metal master 50, and the stamper 52 is formed on the metal master 50 by the electrolytic plating method. Another metal master may be formed by a plating method, and a stamper may be formed on the metal master by an electrolytic plating method. By doing so, as in the first embodiment, a stamper in which the concave / convex pattern on the transfer surface 10A of the master 10 is opposite to the concave / convex direction is obtained. Further, the metal master and the stamper may be manufactured by repeating the electrolytic plating method.

  In the conductive film forming step (S104) of the first and second embodiments, the irradiation direction of Ni particles is 45 (within a range of 40 to 50 °) with respect to the normal line Ln of the surface of the master 10. Although an example of tilting by about 0 ° is shown, if the conductive film 18 can be reliably formed on the entire surface of the concavo-convex pattern transfer surface 10A, the angle of the irradiation direction of the particles of the conductive material with respect to the normal line Ln of the surface of the master 10 is The angle may be in another range.

  Further, in the conductive film forming step (S104) of the first and second embodiments, the conductive film 18 is kept constant in the inclination angle of the irradiation direction of the particles of the conductive material with respect to the normal line Ln of the surface of the master 10. However, the conductive film 18 may be formed while changing the irradiation direction of the particles of the conductive material with respect to the normal line Ln of the surface of the master 10. Furthermore, the irradiation direction of the particles of the conductive material may be temporarily parallel to the normal line Ln of the surface of the master 10.

  For example, when the width of the concave portion of the concavo-convex pattern on the transfer surface 10A of the master 10 is narrow or deep, it is difficult to form a conductive film on the bottom surface of the concave portion, but it is easy to form a conductive film on the top surface of the convex portion. Because of the conductive film formed on the upper surface of the convex portion, it is estimated that the particles do not easily reach the concave portion. In such a case, first, the irradiation direction of the particles of the conductive material with respect to the normal line Ln of the surface of the master 10 is set at a close angle or parallel to the normal line Ln of the surface of the master 10, and the bottom of the recess is electrically conductive. It is expected that the conductive film can be more reliably formed on the entire surface of the concavo-convex pattern by inclining the irradiation direction of the particles of the conductive material in the direction away from the normal line Ln of the surface of the master 10 after forming the film. .

  In the conductive film forming step (S104) of the first and second embodiments, the conductive film 18 is formed by using an ion beam sputtering method. For example, an ion beam of particles that are film materials is used. Mass-separation method or non-mass-separation type ion beam method for irradiating a workpiece with a cluster, cluster ion beam method for clustering particles as film materials and irradiating the workpiece with a cluster ion beam, etc. The conductive film may be formed using another ion beam deposition method. Furthermore, the conductive film 18 may be formed by a film forming method other than the ion beam deposition method as long as the film forming method has excellent directivity of the irradiated particles.

  In the conductive film forming step (S104) of the first and second embodiments, the conductive film 18 is formed while the master 10 is rotated around its central axis. If the conductive film 18 can be reliably formed on the entire surface, the conductive film 18 may be formed while the master 10 is rotated around an axis other than the central axis.

  In the conductive film forming step (S104) of the first and second embodiments, the conductive film 18 is formed while the master 10 is rotated. For example, the irradiation source 32 is revolved around the master 10. As described above, the conductive film 18 may be formed while the irradiation source 32 is rotated with respect to the master 10. If the conductive film can be reliably formed on the entire transfer surface 10A of the master 10, the conductive film 18 is formed while the orientation of the master 10 is changed relative to the irradiation source 32 by a behavior other than rotation. May be.

  In the first and second embodiments, the material of the conductive film 18 is Ni. However, other conductive materials such as Ag, Au, and Cu may be used as the material of the conductive film.

  In the first and second embodiments, the material of the electrolytic plating layer 20 and the stamper 52 is Ni. However, any material having appropriate hardness and ductility as a stamper or a metal master may be used. Other materials such as Ni—Co (cobalt) alloy may be used as the material.

  In the first and second embodiments, the conductive film 18 is formed in accordance with the concave / convex pattern of the transfer surface 10A of the master 10 and the concave portions are not filled with the conductive film 18; The electrolytic plating layer 20 may be formed after the concave portions of the pattern are completely filled with the conductive film 18.

  In the first and second embodiments, the master 10 includes a substrate 14 made of silicon, glass, or the like, and a resist material 16 partially formed on the substrate 14. 16 constitutes the convex portion of the concavo-convex pattern on the transfer surface 10A, but the configuration of the master is not particularly limited. For example, the concavo-convex pattern transfer surface is formed by etching or the like on a substrate such as silicon or glass. A master may be used.

  The stamper 12 was produced as in the first embodiment. Specifically, first, a resist material 16 that is an electron beam resist is formed on a silicon substrate 14 by spin coating to a thickness of about 100 nm, exposed and developed by an electron beam drawing apparatus, and transferred to the transfer surface 10A. A concave / convex pattern having a convex portion width (line width) of about 40 nm and a concave portion width (space width) of about 50 nm was formed to produce a master 10. Two masters 10 were produced.

  Next, a conductive film 18 was formed by irradiating the transfer surface 10A of the master 10 with Ni particles under the following conditions by an ion beam sputtering method (one of the ion beam deposition methods). .

Ion beam gas irradiated to target: Ar
First grid voltage (for ion beam acceleration): 1200V
Second grid voltage (for ion beam acceleration): 325V
Beam current: 324 mA
Tilt angle of Ni particle irradiation direction with respect to the normal Ln of the surface of the master 10: 45 °
Number of rotations of master 10: 10 rpm

  When the cross section of one of the two samples was observed by SEM (Scanning Electron Microscope), as shown in FIG. 10, the conductive film 18 was formed on the entire surface of the concavo-convex pattern transfer surface 10A. .

  Next, an electrolytic plating layer 20 having a thickness of about 300 μm was formed on the conductive film 18 of the other sample by electrolytic plating.

  The electrolytic plating layer 20 and the conductive film 18 were integrally peeled from the master 10, and the resist 16 was removed to produce the stamper 12.

  When the cross section of the stamper 12 was observed with an SEM, it was confirmed that no gap was formed in the stamper 12.

  Further, as in the second embodiment, when the stamper 12 is used as the metal master 50 and the stamper 52 is formed on the metal master 50 by electrolytic plating, and the cross section of the stamper 52 is observed with an SEM, the stamper It was confirmed that no voids were formed in 52.

[Comparative example]
In contrast to the above example, a conductive film 18 was formed on the transfer surface 10A of the master 10 by sputtering. When the cross section was observed with an SEM, as shown in FIG. 11, the conductive film 18 was formed in the vicinity of the top of the convex portion and the bottom of the concave portion of the transfer surface 10A of the concave and convex pattern. The conductive film 18 was hardly formed on the portion near the bottom.

  The present invention can be used for manufacturing a stamper for manufacturing a magnetic recording medium having a concavo-convex pattern recording layer, such as a discrete track medium and a patterned medium, a semiconductor product, and an optical recording medium.

1 is a side sectional view schematically showing the structure of a master and a stamper according to a first embodiment of the present invention. Flow chart showing outline of manufacturing method of the stamper Side view schematically showing the structure of an ion beam deposition apparatus for forming a conductive film on the master. Side sectional view schematically showing the process of forming the conductive film Side sectional view schematically showing a master on which the conductive film is formed on the entire transfer surface Side sectional view schematically showing a master having an electroplating layer formed on the conductive film The flowchart which shows the outline of the manufacturing method of the stamper which concerns on 2nd Embodiment of this invention. Side sectional view schematically showing the structure of a metal master used for manufacturing the same stamper Side sectional view schematically showing a stamper formed on the metal master Micrograph of a side cross section showing the shape of the conductive film in an example of the present invention Micrograph of side cross section showing shape of conductive film in comparative example Side sectional view which shows typically an example of the shape of the conventional electrically conductive film formed into a film by sputtering method Side sectional view which shows typically another example of the shape of the conventional electrically conductive film formed into a film by sputtering method

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,100 ... Master 10A, 100A ... Transfer surface 12, 52 ... Stamper 14, 102 ... Substrate 16, 104 ... Resist material 18, 106 ... Conductive film 20 ... Electrolytic plating layer 30 ... Ion beam deposition apparatus 32 ... Irradiation source 34 ... Ion beam generation source 36 ... Holding mechanism 38 ... Vacuum chamber 50 ... Metal master Ln ... Normal surface of master disk S102 ... Master disk manufacturing process S104 ... Conductive film forming process S106 ... (first) electroplating process S108 ... Peeling Step S202 ... Second electrolytic plating step S204 ... Stripping step

Claims (6)

  At least temporarily with respect to the normal of the surface of the master by a film forming method in which a master having a transfer surface with a predetermined concavo-convex pattern is linearly irradiated in one direction with particles from an irradiation source to form a film. Conductive film is formed on the transfer surface by irradiating particles of a conductive material with a relatively inclined irradiation direction and relatively changing the orientation of the master with respect to the irradiation source. A stamper manufacturing method comprising: a film forming step; and an electrolytic plating step of forming an electrolytic plating layer on the conductive film by an electrolytic plating method. In claim 1,
In the conductive film forming step, the conductive film is formed on the transfer surface while the master is rotated relative to the irradiation source. In claim 1 or 2,
The stamper manufacturing method, wherein the film forming method in the conductive film forming step is an ion beam deposition method. In any one of Claims 1 thru | or 3,
In the conductive film forming step, the stamper manufacturing method is characterized in that the irradiation direction is inclined relative to the normal of the surface of the master disk at least temporarily by 40 to 50 °. In any one of Claims 1 thru | or 4,
A stamper manufacturing method using a master having an uneven pattern including a recess having a width of 100 nm or less on the transfer surface as the master. In any one of Claims 1 thru | or 5,
The electroplating step is a first electroplating step, and after the first electroplating step, the conductive film and the electroplating layer are integrally peeled from the master, and the electroconductive plating layer and the electroplating layer are separated. A stamper manufacturing method, comprising: a second electroplating step which is used as a metal master and forms either a stamper or another metal master on the metal master by electrolytic plating.