KR20100067610A - 화학 기계 연마 조성물 및 관련 방법 - Google Patents

화학 기계 연마 조성물 및 관련 방법 Download PDF

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Publication number
KR20100067610A
KR20100067610A KR1020090117931A KR20090117931A KR20100067610A KR 20100067610 A KR20100067610 A KR 20100067610A KR 1020090117931 A KR1020090117931 A KR 1020090117931A KR 20090117931 A KR20090117931 A KR 20090117931A KR 20100067610 A KR20100067610 A KR 20100067610A
Authority
KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
hydroxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020090117931A
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English (en)
Korean (ko)
Inventor
전둥 류
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20100067610A publication Critical patent/KR20100067610A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020090117931A 2008-12-11 2009-12-01 화학 기계 연마 조성물 및 관련 방법 Ceased KR20100067610A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/332,816 2008-12-11
US12/332,816 US8071479B2 (en) 2008-12-11 2008-12-11 Chemical mechanical polishing composition and methods relating thereto

Publications (1)

Publication Number Publication Date
KR20100067610A true KR20100067610A (ko) 2010-06-21

Family

ID=41598076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090117931A Ceased KR20100067610A (ko) 2008-12-11 2009-12-01 화학 기계 연마 조성물 및 관련 방법

Country Status (7)

Country Link
US (1) US8071479B2 (https=)
EP (1) EP2196509B1 (https=)
JP (1) JP5620673B2 (https=)
KR (1) KR20100067610A (https=)
CN (1) CN101767295B (https=)
DE (1) DE602009000683D1 (https=)
TW (1) TWI478227B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170073628A (ko) * 2014-10-21 2017-06-28 캐보트 마이크로일렉트로닉스 코포레이션 코발트 파임 제어제
KR20190033431A (ko) * 2017-09-21 2019-03-29 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 코발트용 화학 기계적 연마 방법

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US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
CN109906257B (zh) * 2016-10-17 2021-11-09 Cmc材料股份有限公司 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US10597558B1 (en) 2018-10-20 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US10640681B1 (en) 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US20050056810A1 (en) 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
CN1731567B (zh) * 2005-06-22 2010-08-18 中国科学院上海微系统与信息技术研究所 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液
WO2007102138A2 (en) 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
US20070298611A1 (en) * 2006-06-27 2007-12-27 Jinru Bian Selective barrier slurry for chemical mechanical polishing
CN1884410A (zh) * 2006-07-05 2006-12-27 大连理工大学 一种化学机械抛光单晶氧化镁基片用的抛光液
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170073628A (ko) * 2014-10-21 2017-06-28 캐보트 마이크로일렉트로닉스 코포레이션 코발트 파임 제어제
KR20190033431A (ko) * 2017-09-21 2019-03-29 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 코발트용 화학 기계적 연마 방법

Also Published As

Publication number Publication date
DE602009000683D1 (de) 2011-03-10
EP2196509A1 (en) 2010-06-16
JP2010153853A (ja) 2010-07-08
EP2196509B1 (en) 2011-01-26
US20100151683A1 (en) 2010-06-17
CN101767295B (zh) 2012-05-23
US8071479B2 (en) 2011-12-06
CN101767295A (zh) 2010-07-07
JP5620673B2 (ja) 2014-11-05
TWI478227B (zh) 2015-03-21
TW201030831A (en) 2010-08-16

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