KR20100066845A - 염료 감응형 태양전지 및 그 제조방법 - Google Patents
염료 감응형 태양전지 및 그 제조방법 Download PDFInfo
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- KR20100066845A KR20100066845A KR1020080125333A KR20080125333A KR20100066845A KR 20100066845 A KR20100066845 A KR 20100066845A KR 1020080125333 A KR1020080125333 A KR 1020080125333A KR 20080125333 A KR20080125333 A KR 20080125333A KR 20100066845 A KR20100066845 A KR 20100066845A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 30
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 30
- 239000011244 liquid electrolyte Substances 0.000 claims abstract description 8
- 230000001235 sensitizing effect Effects 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 206010070834 Sensitisation Diseases 0.000 abstract 5
- 230000008313 sensitization Effects 0.000 abstract 5
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920005596 polymer binder Polymers 0.000 description 2
- 239000002491 polymer binding agent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 230000002458 infectious effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- -1 naobium oxide Chemical compound 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/209—Light trapping arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
- 상부에 투명전극이 형성된 제1 기판;상기 투명전극의 상부에 형성되며, 금속산화물과 상기 금속산화물에 흡착된 증감염료를 포함하는 증감염료 담지층;상기 증감염료 담지층과 서로 대향 배치되며, 일정 영역에 상대전극 및 일정 형태로 패터닝된 반사층이 형성된 제2 기판; 및상기 증감염료 담지층을 포함한 제1 기판과 제2 기판의 사이에 개재되어 형성된 액상 전해질을 포함하는 염료 감응형 태양전지.
- 제1 항에 있어서,상기 반사층은 복수개의 스트라이프 형상 또는 격자무늬 형태를 갖는 것을 특징으로 하는 염료 감응형 태양전지.
- 제1 항에 있어서,상기 반사층은 상기 제2 기판과 상대전극 사이의 일정 영역에 개재되어 형성되는 것을 특징으로 하는 염료 감응형 태양전지.
- 제1 항에 있어서,상기 반사층은 상기 상대전극 상부의 일정 영역에 형성되는 것을 특징으로 하는 염료 감응형 태양전지.
- 제1 항에 있어서,상기 반사층은 상기 제2 기판의 외측 표면의 일정 영역에 형성되는 것을 특징으로 하는 염료 감응형 태양전지.
- 제1 항에 있어서,상기 반사층은 몰리브텐(Mo), 크롬(Cr), 알루미늄(Al), 알루미늄-네오듐(AlNd), 은(Ag), 티타늄(Ti), 텅스텐(W) 또는 구리(Cu) 중 선택된 어느 하나의 물질로 이루어진 것을 특징으로 하는 염료 감응형 태양전지.
- (a) 제1 및 제2 기판을 구비하는 단계;(b) 제1 기판의 상부에 투명전극을 형성하는 단계;(c) 상기 투명전극의 상부에 금속산화물 및 상기 금속산화물에 흡착된 증감 염료를 포함하는 증감염료 담지층을 형성하는 단계;(d) 상기 제2 기판의 일정 영역에 상대전극 및 일정 형태로 패터닝된 반사층을 형성하는 단계;(e) 상기 증감염료 담지층과 상기 상대 전극이 상호 대향하도록 상기 제1 및 제2 기판을 정렬하는 단계; 및(f) 상기 증감염료 담지층을 포함한 상기 투명전극과 상대 전극과의 사이에 액상 전해질을 형성하는 단계를 포함하는 염료 감응 태양전지의 제조방법.
- 제7 항에 있어서,상기 단계 (d)에서,상기 반사층은 복수개의 스트라이프 또는 격자무늬 형태를 갖도록 형성하는 것을 특징으로 하는 염료 감응형 태양전지의 제조방법.
- 제7 항에 있어서,상기 단계 (d)에서,상기 반사층은 상기 제2 기판과 상기 상대전극 사이의 일정 영역에 개재하여 형성하는 것을 특징으로 하는 염료 감응형 태양전지의 제조방법.
- 제7 항에 있어서,상기 단계 (d)에서,상기 반사층은 상기 상대전극 상부의 일정 영역에 형성하는 것을 특징으로 하는 염료 감응형 태양전지의 제조방법.
- 제7 항에 있어서,상기 단계 (d)에서,상기 반사층은 상기 제2 기판의 외측 표면의 일정 영역에 형성하는 것을 특징으로 하는 염료 감응형 태양전지의 제조방법.
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Cited By (2)
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KR20120055047A (ko) * | 2010-11-22 | 2012-05-31 | 서울시립대학교 산학협력단 | 태양전지 및 그 제조방법 |
KR101539410B1 (ko) * | 2012-11-13 | 2015-07-27 | 재단법인대구경북과학기술원 | 패턴 반사층을 포함하는 태양전지 및 그 제조방법 |
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KR101968239B1 (ko) | 2015-12-28 | 2019-04-11 | 연세대학교 산학협력단 | 기판-반사층 복합체 및 이의 제조방법 |
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KR100589322B1 (ko) | 2004-02-03 | 2006-06-14 | 삼성에스디아이 주식회사 | 고효율 염료감응 태양전지 및 그 제조 방법 |
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Cited By (2)
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KR20120055047A (ko) * | 2010-11-22 | 2012-05-31 | 서울시립대학교 산학협력단 | 태양전지 및 그 제조방법 |
KR101539410B1 (ko) * | 2012-11-13 | 2015-07-27 | 재단법인대구경북과학기술원 | 패턴 반사층을 포함하는 태양전지 및 그 제조방법 |
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