KR20100060951A - An apparatus for spraying gas in system for processing wafer - Google Patents

Abstract

A gas injection device for a wafer processing device is provided. The gas injection device for the wafer processing apparatus is provided with a main body installed in a chamber of the wafer processing apparatus; A gas supply pipe installed around the periphery of the main body; A plurality of branch pipes connected to the gas supply pipe; A nozzle installed at the tip of each branch pipe and for injecting gas to the wafer; A flow rate detector for measuring a gas supply amount supplied through each branch pipe; And a flow controller for controlling the supply amount of the gas supplied through the branch pipe.

Description

An Apparatus for Spraying Gas in System for Processing Wafer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas injector for a wafer processing apparatus, and more particularly, for a wafer processing apparatus that can individually adjust each nozzle for injecting and supplying gas to a wafer processing apparatus to improve gas efficiency and process performance. It relates to a gas injector.

Generally, substrates used in flat panel displays (FPDs), semiconductor wafers, LCDs, and photomask glasses are processed through a series of process lines. That is, photo resist coating (P / R), exposure, development, asher, etching, stripping, cleaning, drying, etc. By repeating the process, an array of fine patterning is formed, and foreign substances generated in each process are subjected to a washing process using deionized water or chemical.

In addition, various types of wafer processing apparatuses are continuously or independently provided in a manufacturing system for manufacturing a wafer, and a processing gas, a processing liquid, and pure water are sprayed or supplied to a wafer in various ways to process the wafer.

As shown in FIG. 1 and FIG. 2, according to the gas injection apparatus applied to the wafer processing apparatus, the circular main body 1 installed in the processing chamber of the wafer processing apparatus and the periphery of the main body 1 are installed. A plurality of branch pipes 3, which are in communication with the gas supply pipe 2, respectively, and which are provided through the main body 1, and which are provided at the front end of each branch pipe 3, and are actually wafers. At (W), for example, a nozzle 4 for injecting CVD gas is provided.

According to such a configuration, the process gas supplied from the gas supply source (not shown) through the gas supply pipe 2 in the state in which the wafer W is disposed under the center of the main body 1 is branched from the gas supply pipe 2. The processing gas is injected onto the wafer W through each branch pipe 3 to process the wafer W. As shown in FIG.

However, such a conventional gas injector for a wafer processing apparatus may cause a process defect due to non-uniform injection of gas due to a difference in flow rate supplied to nozzles provided in respective branch pipes, and in particular, as time passes. Due to the difference in the flow rate and the supply pressure of the gas due to the deformation of each branch pipe and the nozzle, there is a problem that the process performance is lowered, resulting in a product defect.

Accordingly, an object of the present invention is to provide a gas injector for a wafer processing apparatus that can optimize gas efficiency and process performance by individually controlling the amount of gas supplied or injected through the branch pipe and the nozzle, respectively. will be.

Meanwhile, the object of the present invention is not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

The gas injector for a wafer processing apparatus for solving the said subject is a gas injector for the wafer processing apparatus of a wafer manufacturing system, Comprising: The main body provided in the chamber of a wafer processing apparatus; A gas supply pipe installed around the periphery of the main body; A plurality of branch pipes connected to the gas supply pipe; A nozzle installed at the tip of each branch pipe and for injecting gas to the wafer; A flow rate detector for measuring a gas supply amount supplied through the branch pipe; And a flow regulator for controlling the supply amount of the gas supplied through the branch pipe.

According to the gas injector for the wafer processing apparatus according to the present invention, a flow meter is installed to measure the flow rate of the gas supplied or injected through the branch pipe and the nozzle, and each of the measured values measured by the flow meter is measured. According to the flow rate regulator for controlling the amount of gas supplied, it is possible to individually control the flow rate of the gas supplied and injected through each branch pipe and nozzle, so that the efficiency and efficiency of the gas can be maximized It is.

On the other hand, the effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the description of the claims.

Advantages and features of the present invention, and means or method for achieving the same will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout. In addition, "and / or" includes each and all combinations of one or more of the items mentioned.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a perspective view showing a gas injector for a wafer processing apparatus according to the present invention as a whole, FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3, and FIG. 5 is a state diagram of a gas injector according to the present invention.

3 to 5, the gas injector for a wafer processing apparatus according to the present invention is applied to, for example, a processing apparatus for a chemical vapor deposition (CVD) process, the chamber of the wafer processing apparatus (not shown) It is provided with a main body 10 to be installed. The body 10 is, of course, formed to be suitably installed in the chamber and is generally cylindrical.

The gas supply pipe 20 is installed in the periphery of the main body 10 along the whole periphery. The gas supply pipe 20 is formed of a circular pipe and is connected to a gas supply source (not shown) so as to supply a processing gas such as, for example, a CVD gas.

The gas supply pipe 20 is provided with a plurality of branch pipes 30 for communicating gas supplied from the gas supply pipe 20 to a nozzle to be described later. Each branch pipe 30 is bent and extends through the body 10 to the bottom of the body 10.

Each branch pipe 30 is provided with a nozzle 40 for actually spraying and supplying gas to the wafer (W). Of course, each nozzle 40 communicates with the tip of each branch pipe 30 and may be integrally provided in the main body 10 for a practically stable installation, and the tip of the nozzle 40 may have a main body ( 10 is exposed downward to face the wafer (W).

In particular, according to one feature of the present invention, the flow rate detector 50 for detecting the flow rate of the gas supplied through each branch pipe 30 is provided at the proper position of each branch pipe 30. Each flow detector is preferably installed between the nozzle 40 and the flow regulator described later, so as to accurately measure the gas flow rate actually supplied to the nozzle. In addition, each flow rate detector 50 is preferably formed of a flow rate check sensor.

In addition, according to one feature of the invention, each branch pipe 30 is preferably provided with a flow regulator 60 for adjusting the amount of gas supplied or flows through the branch pipe (30). Each flow regulator 60 can individually adjust the amount of gas passing through each branch pipe 30 in which the flow regulator 60 is installed.

Optionally, each of the above-described flow rate detectors 50 and each flow rate regulator 60 may be connected to a controller provided in the wafer processing apparatus or the processing system or a separate controller 70 so as to be individually detected and controlled. . The controller 70 sets or inputs a reference supply amount to be supplied through each branch pipe 30. Accordingly, the controller 70 detects the flow rate of the gas supplied through the respective branch pipes 30 by using the respective flow detectors 50, and then compares the detected amount with the reference supply amount, respectively. By adjusting 60, the gas supply amount can be adjusted.

Hereinafter, a gas supply control method and a mode of operation of the gas injector for the wafer processing apparatus configured as described above will be described in detail.

First, when gas is supplied from a gas supply source (not shown) while the wafer is placed in the chamber of the processing apparatus, the gas is supplied through the gas supply pipe 20 provided around the main body 10, and the gas supply pipe ( It is supplied to each branch pipe 30 communicated with 20).

Thus, the gas supplied to each branch pipe 30 is sprayed toward the wafer W through each nozzle 40, and can process the wafer W in the end.

Meanwhile, during the supply and injection of the gas, the flow rate detector 50 installed in each branch pipe 30 detects the flow rate of the gas supplied through the branch pipe 30 and sends it to the controller 70 in real time. .

In this way, when the gas flow rate of the branch pipe 30 measured by each flow rate detector 50 is received by the controller 70, the controller 70 compares with the reference supply amount set in the controller 70.

As a result of comparing the detection amount and the reference supply amount as described above, if the detection amount of the corresponding branch pipes 30 is larger than the reference supply amount, the flow controller 60 is properly closed to adjust the supply flow rate, or the detection amount of the branch pipes 30 is referred to. If less than the supply amount, the flow regulator 60 is properly opened to regulate the supply flow rate.

Accordingly, the respective branch pipes are always supplied with an optimally regulated amount of gas, thereby preventing process defects and product defects due to wasted gas or insufficient gas supply.

While the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains have various permutations and modifications without departing from the spirit or essential features of the present invention. It is to be understood that the present invention may be practiced in other specific forms, since modifications may be made. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

1 is a perspective view of a gas injector for a conventional wafer processing apparatus.

2 is a cross-sectional view of the gas injector of FIG.

Figure 3 is a perspective view showing a gas injector for the wafer processing apparatus according to the invention as a whole.

4 is a cross-sectional view taken along the line A-A of FIG.

5 is a state diagram used in the gas injector according to the present invention.

* Description of the symbols for the main parts of the drawings *

10: main body 20: gas supply pipe

30: branch pipe 40: nozzle

50: flow rate detector 60: flow rate regulator

Claims (5)

In the gas injector for a wafer processing apparatus of a wafer manufacturing system, A main body installed in the chamber of the wafer processing apparatus; A gas supply pipe installed around a periphery of the main body; A plurality of branch pipes installed in communication with the gas supply pipe; A nozzle installed at the tip of each branch pipe to inject gas into the wafer; A flow rate detector for measuring a gas supply amount supplied through the branch pipe; And Gas injection device for a wafer processing apparatus comprising a flow regulator for controlling the supply amount of gas supplied through the branch pipe. The method of claim 1, The flow rate detector is a gas injection device for a wafer processing apparatus, which is a flow rate check sensor provided between the nozzle of the branch pipe and the flow regulator. The method according to claim 1 or 2, And a controller for receiving a detection amount from each of said flow rate detectors and for controlling said respective flow regulators. The method of claim 3, And a reference supply amount to be supplied to each branch pipe is set in the controller. The method of claim 4, wherein  The flow rate detector detects the flow rate of the gas supplied through the branch pipe and sends it to the controller in real time; And the controller is configured to control the flow controller according to a result of comparing the detection amount of the corresponding branch pipe sent from the respective flow detectors with the reference supply amount.

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