KR0133943Y1 - Nitrogen supply system - Google Patents
Nitrogen supply system Download PDFInfo
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- KR0133943Y1 KR0133943Y1 KR2019940037087U KR19940037087U KR0133943Y1 KR 0133943 Y1 KR0133943 Y1 KR 0133943Y1 KR 2019940037087 U KR2019940037087 U KR 2019940037087U KR 19940037087 U KR19940037087 U KR 19940037087U KR 0133943 Y1 KR0133943 Y1 KR 0133943Y1
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- nitrogen gas
- nitrogen
- pure water
- heating
- temperature
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 32
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract 2
- 230000005587 bubbling Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000243 solution Substances 0.000 description 7
- 238000010926 purge Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 웨이퍼의 세정력을 향상시키기 위하여 고온의 질소를 석영베스내에 분사하는 질소공급장치에 관한 것으로, 압력계의 일측에 장착되어 질소가스의 공급을 감지하는 감지수단;상기 감지수단과 유량계사이에 장착되어 공급되는 질소를 소정온도로 가열하는 히팅수단;상기 감지수단에 의해 감지된 질소공급신호를 인가받아 상기 히팅수단에 전원을 공급하는 전원공급수단; 및 상기 히팅수단에 연결되어 가열된 질소가스를 소정온도로 제어하는 온도제어수단을 구비하여 고온의 질소가스로 순수를 버블링시키므로서 웨이퍼표면에 존재하는 화학성분을 순수에 희석이 잘되게 하여 짧은 시간내에 세정력을 극대화하는 효과가 있다.The present invention relates to a nitrogen supply device for injecting high temperature nitrogen into the quartz bath to improve the cleaning power of the wafer, the detection means for detecting the supply of nitrogen gas is mounted on one side of the pressure gauge; mounted between the detection means and the flow meter Heating means for heating the supplied nitrogen to a predetermined temperature; power supply means for supplying power to the heating means by receiving the nitrogen supply signal sensed by the sensing means; And a temperature control means connected to the heating means to control the heated nitrogen gas at a predetermined temperature, thereby bubbling pure water with high temperature nitrogen gas, thereby making it possible to dilute the chemical component present on the wafer surface with pure water well for a short time. There is an effect to maximize the cleaning power within.
Description
제1도는 종래의 질소공급장치를 개략적으로 나타낸 구성도.1 is a schematic view showing a conventional nitrogen supply apparatus.
제2도는 본 고안에 의한 세정력 향상을 위한 질소공급장치의 일실시예 구성도.Figure 2 is an embodiment configuration of a nitrogen supply device for improving the cleaning power according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 석영베스 2 : 질소공급라인1: quartz bath 2: nitrogen supply line
3 : 압력계 4 : 센서3: pressure gauge 4: sensor
5 : 히터튜브 6 : 전원공급부5: heater tube 6: power supply
7 : 온도제어기 8 : 유량계7: temperature controller 8: flow meter
9 : 필터 10 : 웨이퍼9: filter 10: wafer
본 고안은 반도체 제조장비 중 석영베스 내의 웨이퍼 세정을 위하여 순수를 유동시키기 위해 공급되는 질소가스의 공급장치에 관한 것으로, 특히 질소가스를 고온으로 가열하여 석영베스 내에 공급하므로써;순수의 웨이퍼 세정력을 향상시키는 질소공급장치에 관한 것이다.The present invention relates to a device for supplying nitrogen gas supplied to flow pure water for cleaning wafers in a quartz bath in a semiconductor manufacturing equipment, and in particular, by heating nitrogen gas to a high temperature and supplying it to a quartz bath; It relates to a nitrogen supply unit.
일반적으로, 웨이퍼는 황산(H2SO4), 인산(H3PO4) 등의 화학용액으로 고온에서 식각처리된 후, 석영베스(quartz bath)에서 상기 화학용액을 제거하는 세정작업을 거치게 되는데, 상기 화학용액은 점도가 높기 때문에 통상적으로 80℃ 이상의 고온순수로 세정하는 것이 효과적이며, 상기 고온순수를 상기 석영베스 내에 공급하면서 상온의 질소가스를 분사하여 기포를 발생시키므로써, 상기 석영베스에 담겨진 웨이퍼를 유동시켜 세정공정을 실시하고 있다.In general, the wafer is etched at high temperature with a chemical solution such as sulfuric acid (H 2 SO 4 ), phosphoric acid (H 3 PO 4 ), and then subjected to a cleaning operation to remove the chemical solution from a quartz bath. Since the chemical solution has a high viscosity, it is generally effective to clean it with high temperature pure water of 80 ° C. or higher, and by supplying the high temperature pure water into the quartz bath, by injecting nitrogen gas at room temperature to generate bubbles, The contained wafer is made to flow, and the washing process is performed.
상기한 바와 같은 세정공정을 수행하기 위한 종래의 질소공급장치를 제1도를 참조하여 간략히 설명한다.A conventional nitrogen supply apparatus for performing the cleaning process as described above will be briefly described with reference to FIG.
도면에 도시된 바와 같이, 종래의 질소공급장치는, 세정공정이 진행되는 석영베스(1)에는 순수에 기포가 발생되도록 질소가스를 공급하는 질소공급라인(2)과, 상기 질소공급라인(2)의 관로 상에 장착되어 공급되는 질소가스의 압력을 조절하는 압력계(3)와, 상기 압력계(3)의 일측에 장착되어 질소가스의 흐름을 조절하는 유량계(8)와, 상기 유량계(8)의 일측에 장착되어 공급되는 질소가스를 여과하는 필터(9)를 포함하고 있다.As shown in the figure, the conventional nitrogen supply apparatus, the nitrogen supply line (2) for supplying nitrogen gas so that bubbles are generated in the pure water in the quartz bath (1) in the cleaning process, and the nitrogen supply line (2) Pressure gauge (3) for adjusting the pressure of the nitrogen gas is supplied mounted on the pipeline of the), flow meter (8) mounted on one side of the pressure gauge (3) to regulate the flow of nitrogen gas, and the flow meter (8) It includes a filter (9) for filtering the nitrogen gas supplied mounted on one side of the.
이와 같은 종래의 질소공급장치는, 석영베스(1)에 순수와 함께 질소가스를 공급하여, 상기 순수에 기포를 발생시키므로써, 상기 웨이퍼의 표면에 잔재하는 화학용액이 상기 순수에 의해 희석되어 제거되도록 하고 있다.Such a conventional nitrogen supply device supplies nitrogen gas with pure water to the quartz bath 1 to generate bubbles in the pure water, whereby the chemical solution remaining on the surface of the wafer is diluted and removed by the pure water. I am trying to.
그러나, 상기한 바와 같은 종래의 질소공급장치는, 순수의 온도가 80℃ 이상의 고온임에 비해 질소가스는 상온이므로, 질소가스가 석영베스 내에 공급된 순수의 온도를 낮추게 되어, 결국 웨이퍼의 표면에 잔재하는 화학용액의 희석이 잘 이루어지지 않아 세정작업의 효율이 저하되는 문제점이 있었다.However, in the conventional nitrogen supply apparatus as described above, since the nitrogen gas is at room temperature while the temperature of the pure water is higher than 80 ° C. or higher, the nitrogen gas is lowered in the temperature of the pure water supplied into the quartz bath, resulting in the surface of the wafer. There was a problem that the dilution of the residual chemical solution was not well done, the efficiency of the cleaning operation is lowered.
따라서, 본 고안은 상기한 문제점을 해결하기 위하여 안출된 것으로서, 석영베스 내로 공급되는 질소가스를 순수와 비슷한 온도로 가열하므로써, 순수의 온도가 떨어지는 것을 방지하여 웨이퍼 세정작업의 효율을 향상시키는 질소공급장치를 제공하는 데 그 목적이 있다.Accordingly, the present invention was devised to solve the above problems, and by supplying nitrogen gas supplied into the quartz bath to a temperature similar to that of pure water, nitrogen supply is provided to prevent the temperature of the pure water from dropping, thereby improving the efficiency of the wafer cleaning operation. The object is to provide a device.
상기 목적을 달성하기 위하여 본 고안은, 웨이퍼의 세정공정을 실시하는 석영베스에 연결되어, 순수를 유동시키는 기포가 발생되도록 질소가스를 공급하는 질소공급라인과, 상기 질소공급라인의 소정위치에 장착되어 공급되는 질소가스의 압력을 조절하는 압력계와, 상기 압력계의 일측에 장착되어 질소가스의 흐름을 조절하는 유량계와, 상기 유량계의 일측에 장착되어 공급되는 질소가스를 여과하는 필터가 구비된 질소공급장치에 있어서, 상기 압력계의 일측에 장착되어, 질소가스의 공급을 감지하는 감지수단;상기 감지수단과 유량계 사이에 장착되어, 공급되는 상기 질소가스를 소정 온도로 가열하는 히팅수단;상기 감지수단에 의해 감지된 질소공급신호를 인가받아 상기 히팅수단에 전원을 공급하는 전원공급수단; 및 상기 히팅수단에 연결되어 가열된 질소가스를 소정온도로 제어하는 온도제어수단을 포함하는 것을 특징으로 하는 세정력 향상을 위한 질소공급장치를 제공한다.In order to achieve the above object, the present invention is connected to a quartz bath that performs a wafer cleaning process, and a nitrogen supply line for supplying nitrogen gas to generate bubbles for flowing pure water, and mounted at a predetermined position of the nitrogen supply line. And a pressure gauge for adjusting the pressure of the supplied nitrogen gas, a flow meter mounted on one side of the pressure gauge to regulate the flow of nitrogen gas, and a filter mounted on one side of the flow meter to filter the supplied nitrogen gas. An apparatus, comprising: sensing means mounted on one side of the pressure gauge to sense a supply of nitrogen gas; mounted between the sensing means and a flow meter, and heating means for heating the supplied nitrogen gas to a predetermined temperature; Power supply means for supplying power to the heating means by receiving a nitrogen supply signal sensed by the heating means; And a temperature control means connected to the heating means to control the heated nitrogen gas to a predetermined temperature.
이하, 첨부된 제2도를 참조하여 본 고안에 따른 질소공급장치의 일실시예를 상세히 설명한다.Hereinafter, with reference to the accompanying Figure 2 will be described in detail an embodiment of the nitrogen supply apparatus according to the present invention.
제2도는 본 고안의 세정력 향상을 위한 질소공급장치의 일실시예 구성도로서, 도면에서 1은 석영베스, 2는 질소공급라인, 3은 압력계, 4는 센서, 5는 히터튜브, 6은 전원공급부, 7은 온도제어기, 8은 유량계, 9는 필터, 10은 웨이퍼를 각각 나타낸 것이다.2 is a diagram illustrating an embodiment of a nitrogen supply device for improving cleaning power of the present invention, in which 1 is a quartz bath, 2 is a nitrogen supply line, 3 is a pressure gauge, 4 is a sensor, 5 is a heater tube, and 6 is a power source. The supply unit, 7 is a temperature controller, 8 is a flow meter, 9 is a filter, and 10 is a wafer.
도면에 도시된 바와 같이, 본 고안의 세정력 향상을 위한 질소공급장치는 석영베스 내에 주입되는 질소가스를 소정온도로 가열하여 공급되도록 구현한 것으로서, 석영베스(1)에 연결된 질소공급라인(2)의 소정위치에 장착되어 공급되는 질소가스의 압력을 조절하여 일정량의 질소가스를 공급하는 압력계(3)와, 상기 압력계(3)의 일측에 장착되어 질소가스가 공급되는 것을 감지하는 센서(4)와, 상기 센서(4)에 의해 감지된 질소가스를 가열하며, 스테인레스 스틸(stainless steel) 재질로 이루어지되 그 내부는 내열성을 가지며 산화되지 않도록 처리된 히터튜브(5)와, 상기 센서(4)에 의해 감지된 질소공급신호를 인가받아 상기 히터튜브(5)에 전원을 공급하는 전원공급부(6)와, 상기 히터튜브(5)에 의해 가열되는 질소가스를 소정온도로 제어하는 온도제어기(7)와, 상기 히터튜브(5)의 일측에 장착되어 가열된 질소가스를 흐름을 조절하는 유량계(8)와, 상기 유량계(8)의 일측에 장착되며, 공급되는 질소가스를 여과하여 석영베스에 분사하는 필터(9)를 구비한다.As shown in the figure, the nitrogen supply device for improving the cleaning power of the present invention is implemented to be supplied by heating the nitrogen gas injected into the quartz bath to a predetermined temperature, the nitrogen supply line (2) connected to the quartz bath (1) The pressure gauge 3 for supplying a predetermined amount of nitrogen gas by adjusting the pressure of the nitrogen gas supplied and mounted at a predetermined position of the sensor, and the sensor 4 mounted on one side of the pressure gauge 3 to detect that the nitrogen gas is supplied. And a heater tube 5 which heats the nitrogen gas detected by the sensor 4 and is made of stainless steel but has a heat resistance and is not oxidized, and the sensor 4. The power supply unit 6 for supplying power to the heater tube 5 by receiving the nitrogen supply signal sensed by the temperature and the temperature controller 7 for controlling the nitrogen gas heated by the heater tube 5 to a predetermined temperature )Wow, A flowmeter 8 mounted on one side of the heater tube 5 to regulate the flow of heated nitrogen gas, and a filter mounted on one side of the flowmeter 8 to filter the supplied nitrogen gas and inject it into the quartz bath. (9) is provided.
미설명부호 10은 웨이퍼를 나타낸다.Reference numeral 10 denotes a wafer.
이와 같은 본 고안의 세정력 향상을 위한 질소공급장치는, 화학용액으로 처리된 웨이퍼의 세정공정을 실시할 때, 상기 석영베스(1) 내의 고온상태인 순수에 히터튜브(5)에 의해 60∼80℃로 예열된 질소가스를 분사하므로써, 상기 순수에 기포가 발생되도록 한다. 그러면, 상기 순수가 유동되면서 웨이퍼 표면에 잔존하는 화학성분을 희석시켜 웨이퍼를 세정하게 되는 것이다. 이때에는, 상기 순수와 질소가스의 온도차가 작으므로, 순수의 온도가 떨어지지 않는다.The nitrogen supply device for improving the cleaning power of the present invention, when the cleaning process of the wafer treated with the chemical solution, 60 ~ 80 by the heater tube (5) to the pure water in the high temperature state in the quartz bath (1) By injecting nitrogen gas preheated to 占 폚, bubbles are generated in the pure water. Then, as the pure water flows, the chemical components remaining on the wafer surface are diluted to clean the wafer. At this time, since the temperature difference between the pure water and nitrogen gas is small, the temperature of the pure water does not drop.
한편, 본 고안에 의한 질소공급장치의 구성은, 증착공정을 수행하고 난 후의 튜브 내에 잔존하는 가스를 퍼지(purge)할 때 사용하는 펌프퍼지라인에 적용하여 사용할 수 있으며, 이를 간단히 설명하면 상기 펌프의 선단에 히터를 설치하여 질소가스가 펌프내로 주입될 때, 질소가스를 가열하므로써 퍼지를 하기 위한 작업시간을 단축하고 장비가동율을 향상시킬 수 있다.On the other hand, the configuration of the nitrogen supply apparatus according to the present invention, can be used by applying to the pump purge line used when purging the gas remaining in the tube after the deposition process, if briefly described the pump By installing a heater at the tip of the pump, when nitrogen gas is injected into the pump, the working time for purging can be shortened and the equipment operation rate can be improved by heating the nitrogen gas.
상기와 같이 구성된 본 고안은, 예열된 질소가스에 의해 고온의 순수 내에 기포가 발생되므로, 상기 질소가스에 의해 순수의 온도가 낮아지지 않게 되며, 순수에 의해 웨이퍼의 표면에 잔존하는 화학용액의 희석이 잘 이루어져, 짧은 시간 내에 세정 작업의 효율을 극대화하는 효과가 있다.According to the present invention configured as described above, since bubbles are generated in the high-temperature pure water by the preheated nitrogen gas, the temperature of the pure water is not lowered by the nitrogen gas, and the chemical solution remaining on the surface of the wafer by the pure water is diluted. This is well done, there is an effect of maximizing the efficiency of the cleaning operation in a short time.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940037087U KR0133943Y1 (en) | 1994-12-29 | 1994-12-29 | Nitrogen supply system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940037087U KR0133943Y1 (en) | 1994-12-29 | 1994-12-29 | Nitrogen supply system |
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| Publication Number | Publication Date |
|---|---|
| KR960025341U KR960025341U (en) | 1996-07-22 |
| KR0133943Y1 true KR0133943Y1 (en) | 1999-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940037087U KR0133943Y1 (en) | 1994-12-29 | 1994-12-29 | Nitrogen supply system |
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| KR (1) | KR0133943Y1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990042212A (en) * | 1997-11-26 | 1999-06-15 | 윤종용 | Gas supply with filter |
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1994
- 1994-12-29 KR KR2019940037087U patent/KR0133943Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960025341U (en) | 1996-07-22 |
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