KR20100059776A - 발광 다이오드 및 그 제조방법 - Google Patents
발광 다이오드 및 그 제조방법 Download PDFInfo
- Publication number
- KR20100059776A KR20100059776A KR1020100047674A KR20100047674A KR20100059776A KR 20100059776 A KR20100059776 A KR 20100059776A KR 1020100047674 A KR1020100047674 A KR 1020100047674A KR 20100047674 A KR20100047674 A KR 20100047674A KR 20100059776 A KR20100059776 A KR 20100059776A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- emitting diode
- gallium nitride
- composition
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
여기서, 상기 인듐(In) 조성을 갖는 질화갈륨층의 조성식은 In(x)Ga(1-x)N이고, x의 범위는 0<x<0.2 이고, 상기 인듐(In) 조성을 갖는 질화갈륨층의 두께는 50~200Å인 것을 특징으로 한다.
Description
도 2a 내지 도 2d는 본 발명에 따른 발광 다이오드 제조 공정을 설명하기 위한 도면.
203: Undoped 질화갈륨층 205: n형 질화갈륨층
207: InGaN 층 209: 활성층
210: P형 GaN층
Claims (1)
- n 형 질화갈륨층;
상기 n형 질화 갈륨층 상에 배치되어 있는 인듐(In) 조성을 갖는 질화갈륨층;
상기 인듐(In) 조성을 갖는 질화갈륨층 상에 배치되어 있는 활성층; 및
상기 활성층 상에 배치되어 있는 p형 질화갈륨층;을 포함하는 것을 특징으로 하는 발광 다이오드.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100047674A KR101039968B1 (ko) | 2010-05-20 | 2010-05-20 | 발광 다이오드 및 그 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100047674A KR101039968B1 (ko) | 2010-05-20 | 2010-05-20 | 발광 다이오드 및 그 제조방법 |
Related Parent Applications (1)
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KR20030048993A Division KR101034055B1 (ko) | 2003-07-18 | 2003-07-18 | 발광 다이오드 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100059776A true KR20100059776A (ko) | 2010-06-04 |
KR101039968B1 KR101039968B1 (ko) | 2011-06-09 |
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KR1020100047674A KR101039968B1 (ko) | 2010-05-20 | 2010-05-20 | 발광 다이오드 및 그 제조방법 |
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KR (1) | KR101039968B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160109815A (ko) * | 2015-03-13 | 2016-09-21 | 전북대학교산학협력단 | 질화갈륨계 고효율 발광다이오드 및 그의 제조방법 |
US9472624B2 (en) | 2012-09-04 | 2016-10-18 | Samsung Electronics Co., Ltd. | Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130108935A (ko) * | 2012-03-26 | 2013-10-07 | 서울바이오시스 주식회사 | 질화갈륨계 발광 다이오드 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3341576B2 (ja) * | 1996-03-27 | 2002-11-05 | 豊田合成株式会社 | 3族窒化物化合物半導体発光素子 |
JP3713118B2 (ja) * | 1997-03-04 | 2005-11-02 | ローム株式会社 | 半導体発光素子の製法 |
JPH1168150A (ja) * | 1997-08-11 | 1999-03-09 | Toshiba Corp | 半導体発光素子およびその製造方法 |
-
2010
- 2010-05-20 KR KR1020100047674A patent/KR101039968B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9472624B2 (en) | 2012-09-04 | 2016-10-18 | Samsung Electronics Co., Ltd. | Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof |
KR20160109815A (ko) * | 2015-03-13 | 2016-09-21 | 전북대학교산학협력단 | 질화갈륨계 고효율 발광다이오드 및 그의 제조방법 |
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Publication number | Publication date |
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KR101039968B1 (ko) | 2011-06-09 |
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