KR20100057118A - Probe station of variable temperature - Google Patents

Abstract

PURPOSE: A probe station of a variable temperature is provided to prevent the heat radiation from a chuck to a stage by interposing more than one ceramics thermal insulators between the bottom of the chuck and the top of the stage. CONSTITUTION: A chamber(200) comprises a transparent window for observing the inside of the chamber. A chuck is installed within the chamber. The chuck supports a semiconductor device. A heating wire is inserted and installed inside the chuck. The heating wire heats the chuck. A cooling line cools the chuck. The refrigerant of the liquid or gas flows in the cooling line. A manipulator transfers a probe in order to touch on the surface of the semiconductor device.

Description

Temperature Adjustable Probe Station {PROBE STATION OF VARIABLE TEMPERATURE}

The present invention relates to a probe station used for characterizing a semiconductor device, and more particularly, to a variable temperature probe station having a cryogenic and high temperature chuck for easy characterization of both an optical device and an electronic device.

A general probe station is a device used to determine electrical characteristics of semiconductor devices through IV characteristics and CV characteristics of manufactured display devices or light emitting devices. It is a device that enables the contact of a sample as a probe and also enables precise observation and image confirmation of minute parts through a CCD camera.

The probe station is a basic test equipment necessary for characterizing semiconductor devices and is an essential equipment for a semiconductor related laboratory or a semiconductor factory.

By the way, most of the currently used probe stations are applied only for basic characteristics at room temperature and atmospheric pressure conditions, and for the development of new materials requiring high output accuracy in recent years, it is easy to understand the characteristics of both optical devices and electronic devices. There is an increasing need for temperature variable probe stations with cryogenic and high temperature (80K-570K) chucks.

The present invention has been made in view of the necessity as described above, an embodiment of the present invention is a probe station for measuring electrical characteristics of a semiconductor device, the chamber is installed in the chamber, the transparent window is installed on one side for the internal observation And a semiconductor element supporting the semiconductor element and being movable in a plane, a heating wire inserted into the chuck to heat the chuck, inserted into the chuck to cool the chuck, and a cooling line through which liquid or gaseous refrigerant flows, and an upper side of the chuck. It includes a manipulator for moving the probe in contact with the surface of the semiconductor device, and relates to a temperature variable probe station capable of verifying the characteristics of the optical device and the electronic device at cryogenic and high temperature.

According to an embodiment of the present invention, in the probe station for measuring the electrical characteristics of the semiconductor device, a chamber having a transparent window on one side for the internal observation, installed in the chamber to support the semiconductor device, the chuck, the chuck A heating wire inserted into the chuck to heat the chuck, a cooling line inserted into the chuck to cool the chuck and a liquid or gaseous refrigerant flowing therein, and a manipulator installed on the upper side of the chuck to move the probe to contact the surface of the semiconductor element. Provided is a temperature variable probe station comprising a.

According to a preferred embodiment of the present invention, further comprising a stage for supporting the chuck at the bottom of the chuck, one side of the stage is characterized in that a pair of adjusting knobs that can adjust the plane movement of the chuck.

According to one preferred embodiment of the present invention, in order to prevent heat transfer from the chuck to the stage, at least one ceramic insulator is interposed between the bottom of the chuck and the top side of the stage.

According to a preferred embodiment of the present invention, the front transparent window is installed on the front of the chamber, the upper transparent window is installed on the upper side of the chamber, the CCD camera is installed on the upper portion of the upper transparent window to the inside of the chamber through the upper transparent window This is characterized by possible.

According to a preferred embodiment of the present invention, the chuck is characterized in that the gold coating on the oxygen-free copper material.

According to the variable temperature probe station according to an embodiment of the present invention, not only high power and high brightness optical devices, but also high frequency cables and manipulators can be effectively used to understand electrical characteristics of high frequency electronic devices, and semiconductors. In the early stage of the development of the light emitting device, the possibility of device development can be confirmed through cryogenic experiments, and the lifespan and temperature change characteristics of the device can be identified through the test of the high temperature of the manufactured light emitting device.

In addition, since it is possible to secure a wider space compared to the conventional small chamber, there is an advantage in designing a more diverse structure and grasp the characteristics of the optical device.

In addition, by maintaining the vacuum of the chamber to 10 ^-3 torr state, it is possible to block the generation of moisture generated on the surface of the chuck during chuck cooling, it is possible to accurately grasp the temperature characteristics of the sample according to the desired temperature.

In addition, since the temperature is controlled inside the chuck, the atmosphere gas in the chamber can be injected as desired, so that the characteristics of the sample can be confirmed in various gas atmospheres.

In addition, the use of a semi-automatic manipulator allows the probe to be adjusted outside the chamber, making it easy to characterize different parts of a sample under the same vacuum, temperature, anhydrous vapor and atmospheric gas conditions. It can provide ease of characterization.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. 1 is a perspective view of a temperature variable probe station according to an embodiment of the present invention, FIG. 2 is an internal cutaway view of a temperature variable probe stationary apparatus according to an embodiment of the present invention, and FIG. 3 is according to an embodiment of the present invention. 4 is a perspective view of a plate and stage and a chuck according to an embodiment of the present invention, Figure 5 is a perspective view showing a manipulator according to an embodiment of the present invention.

The variable temperature probe station 100 according to an embodiment of the present invention is largely installed in the chamber 200 and the chamber 200, as shown in FIGS. 1 to 5, to support a semiconductor device (not shown). The chuck 300, the heating wire 310 for heating the chuck 300, the cooling line 320 for cooling the chuck 300, and the manipulator 500 for moving the probe 510 in contact with the surface of the semiconductor device. ).

Here, as shown in FIGS. 1 and 2, the chamber 200 minimizes the influence of the external environment such as moisture on the semiconductor device and the temperature or pressure while the electrical property measurement of the semiconductor device, which is a sample, is performed. It is to provide a closed space to give a predetermined condition, the front transparent window 210 and the upper transparent window 220 is installed on the front and upper side, respectively, is a cube-shaped box having a space inside.

At this time, the chamber 200 may open and close the interior by the door (230) of the front, the locking device 231 on one side of the door 230 so that the door 230 is easy to open and close the sealing well. ) Is provided.

In addition, a plurality of connectors 240 are provided at both sides and the rear of the chamber 200, and various types of cables may be connected into the chamber 200 through the connector 240, for example, a vacuum pump ( (Not shown) to maintain the interior of the chamber 200 in a vacuum, or to connect a power cable to power the device that requires power in the chamber 200, may be injected into the atmosphere gas. .

On the other hand, the supporter 250 is coupled to the upper rear end of the chamber 200, and the CCD camera 260 is coupled to the supporter 250 by a bracket 251, and the CCD camera 260 has an upper transparent window ( Through 220, it is possible to photograph the experimental process inside the chamber 200.

2 and 4, the base plate 270 is installed on the bottom surface of the chamber 200, and a hexahedral block-shaped stage 280 is installed above the base plate 270. The stage 280 supports the chuck 300, which will be described later, and serves to move the chuck 300 in a plane direction, ie, front, rear, left and right, and moves the chuck 300 back and forth on the front surface of the stage 280. A front and rear movement knob 281 is provided, and one side surface of the stage 280 is provided with a left and right movement knob 282 for moving the chuck 300 left and right.

In more detail, a disk-shaped moving block 283 is provided at the upper center of the stage 280, and the chuck 300 is supported by the moving block 283, and the user moves the front and rear movement knob 281 or the left and right movement knobs. By operating the knob 282, the moving block 283 is moved back and forth or left and right, and the chuck 300 supported by the moving block 283 is also moved back and forth or left and right together.

The chuck 300 supported on the upper side of the stage 280 serves to support a semiconductor device as a sample and to maintain the sample at a constant temperature.

Here, the chuck 300 has a disc shape having a predetermined thickness and as shown in FIG. 3, the heating wire 310 and the cooling line 320 are spaced apart from each other and are installed in a zigzag form, thereby cooling line 320. Cooling the chuck 300 while the liquid or gaseous refrigerant such as liquid nitrogen flows along the), power is applied to the heating wire 310 to increase the temperature of the chuck 300.

At this time, while continuously supplying the refrigerant to the cooling line 320 to maintain a uniform temperature inside the chuck 300, it is preferable to adjust the current applied to the heating wire 310 to the required temperature, the cooling line Between the inlet 321 and the outlet 322 of the 320, that is, the temperature sensor 330 is inserted into the center of the chuck 300, the temperature control device 600 is installed on one side of the chamber 200 It is preferable to be able to check the internal temperature of the chuck 300 through.

Accordingly, the temperature inside the chuck 300 can be kept uniform while minimizing the temperature deviation, and after the measurement operation is performed at various temperature ranges while the temperature is increased with respect to one sample, the measurement operation is continued with another sample. In this case, since the cooling line 320 can be rapidly cooled to the initial temperature and set, it is possible not only to obtain a more accurate measurement value than the conventional probe station, but also to shorten the time required for measurement. .

In addition, the chuck 300, so that the heat transfer is made quickly and uniformly inside the chuck 300, it is preferable to use a gold-coated material of anoxic copper.

Meanwhile, in order to prevent heat loss due to heat transfer from the chuck 300 to the stage 280, a ceramic insulator 290 is interposed between the chuck 300 and the stage 280. That is, as shown in FIGS. 3 and 4, a plurality of ceramic insulators 290 having a small cylindrical shape are circumferentially surrounded by the edges of the moving block 283, and the ceramic insulators 290 By supporting the chuck 300 on the upper side, it is to prevent the heat loss from the chuck 300 to the stage 280.

A pair of guide bars 410 are spaced apart from each other behind the stage 280. Then, the plate ring 400 is elevated along the guide bar 410, the plate ring 400 is a '은' shaped plate is coupled to the guide bar 410 by the bracket 411, Lifting is possible by screwing on the lifting control bar 420 provided on one side. At this time, the chuck 300 is located between the protrusions 401 at both ends of the plate ring 400, the lifting control bar 420 is preferably provided with a micrometer (micrometer) for fine control.

A plurality of manipulators 500 are mounted on the protrusions 401 at both ends of the plate ring 400, and the number of the manipulators 500 to be mounted can be selected by the user according to the conditions of the experiment and the method of the experiment. 500 serves to move the probe 510 into contact with the semiconductor device supported by the chuck 300, so as not to shake on the upper side of the plate ring 400 by a magnet (not shown) provided on the bottom surface. It is mounted off.

The probe 510 includes a probe holder 511, a probe arm 512 provided at the tip of the probe holder 511, and a probe tip 513 provided at the end of the probe arm 512. One end of the probe holder 511 is mounted to the manipulator 500 and the probe tip 513 is in contact with the surface of the semiconductor device.

At this time, the manipulator 500 is operated to move the probe 510 to accurately contact the probe tip 513 on the surface of the semiconductor device. As shown in FIG. 5, the probe holder 511 of the manipulator 500 is moved. ) Is mounted to the front, the Z-axis knob 502 provided in the upper front of the manipulator 500 can be operated to raise and lower the probe 510, the X-axis knob 503 provided at the rear side It can be moved back and forth by manipulating, and can be moved left and right by operating the Y-axis knob 504 provided on the back.

In addition, by installing the electric motor in the manipulator 500 and applying power from the outside, it is also possible to control the movement of the probe 510 in a semi-auto manner, in this case, the outside of the chamber 200 Since the probe 510 can be adjusted at the same vacuum, temperature, anhydrous vapor, and atmosphere gas, there is an advantage that it is easy to grasp characteristics of various parts of one sample.

Operation of the variable temperature probe station 100 according to an embodiment of the present invention as described above is performed as follows.

First, the semiconductor device serving as the measurement sample is mounted on the upper side of the chuck 300, and the probe tip 513 is operated by operating the lift control bar 420, the knobs 281 and 282 and the manipulator 500 of the stage 280. Make contact with the surface of

Thereafter, liquid nitrogen is supplied to the chuck 300 and the measurement operation is started by maintaining the inside of the chamber 200 in a vacuum state using a vacuum pump (not shown). At this time, the vacuum of the chamber 200 is 10- ^. It is preferable to maintain the ³ torr state, and to adjust the desired temperature is made by adjusting the current applied to the heating wire 310 through the temperature control device 600 provided on one side of the chamber 200, 80K ~ 570K Cryogenic and high temperature experiments are possible in the temperature range of.

In addition, through the front transparent window 210 and the upper transparent window 220 of the chamber 200, the shape of the semiconductor device in the chamber 200 and the state of the chuck 300 and the various cables connected to the chamber 200 The connection state of the semiconductor device and the probe tip 513 and the physical state of the semiconductor device according to the temperature change can be checked by the CCD camera 260 above the chamber 200. You can also check with your PC.

On the other hand, in order to give various experimental conditions, it is possible to supply the atmosphere gas or to install various kinds of sensors or cables inside the chamber 200, which is a plurality of connectors 240 provided on both sides and the rear of the chamber 200 Through), it is possible by connecting devices outside the chamber 200 into the chamber 200.

Unexplained reference numeral 201 denotes a handle provided to facilitate movement of the chamber, and the present invention is not limited to the described embodiments, and various modifications and changes may be made without departing from the spirit and scope of the present invention. It is obvious to those skilled in the art. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

1 is a perspective view of a temperature variable probe station according to an embodiment of the present invention.

2 is an internal cutaway view of a temperature-variable probe stationary apparatus according to an embodiment of the present invention.

3 is a schematic view of a chuck with heating wires and cooling lines in accordance with one embodiment of the present invention;

Figure 4 is a perspective view of the plate and stage and chuck in accordance with an embodiment of the present invention.

5 is a perspective view showing a manipulator according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100: variable temperature probe station 200: chamber

240: connector 260: CCD camera

270: base plate 280: stage

290: ceramic insulator 300: chuck

310: heating wire 320: cooling line

330: temperature sensor 400: plate ring

500: Manipulator 510: Probe

511: probe holder 512: probe arm

513: probe tip 600: temperature control device

Claims (5)

A probe station for measuring electrical characteristics of a semiconductor device, A chamber in which a transparent window is installed at one side for internal observation; A chuck installed in the chamber and supporting the semiconductor element and being movable in a plane; A heating wire inserted into the chuck to heat the chuck; A cooling line inserted into the chuck to cool the chuck and flowing with a liquid or gaseous refrigerant; And And a manipulator disposed on an upper side of the chuck and moving the probe to be in contact with the surface of the semiconductor device. The method according to claim 1, And a stage for supporting the chuck at the bottom of the chuck, wherein one side of the stage is provided with a pair of adjusting knobs for adjusting the plane movement of the chuck. The method according to claim 2, At least one ceramic insulator is interposed between the bottom face of the chuck and the top side of the stage to prevent heat transfer from the chuck to the stage. The method according to claim 1, A front transparent window is installed on the front surface of the chamber, an upper transparent window is installed on an upper side of the chamber, and a CCD camera is installed on an upper part of the upper transparent window, so that the inner slide of the chamber is possible through the upper transparent window. Variable temperature probe station. The method according to claim 1, The chuck is a variable temperature probe station, characterized in that the gold-coated on the oxygen-free copper material.

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