KR20100051445A - Solar cell module - Google Patents

Abstract

PURPOSE: A solar cell module is provided to prevent a photo-generated carrier which is formed in a solar cell due to incident light from recombining by applying a magnetic field to the solar cell. CONSTITUTION: A solar cell(200) generates electric energy by external light. A magnetic field supply unit(300) is installed on the outside of the solar cell. The magnetic field supply unit applies a magnetic field to the solar cell in order to prevent the recombination of a photo-generated carrier in the solar cell. The magnetic field supply unit includes a plurality of magnets.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module, and more particularly, to a solar cell module for converting solar energy supplied from the outside into electrical energy using semiconductor properties.

In general, a solar cell is a device that converts solar energy into electrical energy, and is an alternative energy source that can replace energy sources such as coal and oil due to various advantages such as environmentally friendly, long-lasting, and infinite energy source. As such, the field of application continues to expand.

Solar cells can be classified into silicon-based, compound-based, organic-based, and the like according to the materials used, and silicon-based solar cells currently occupy most of them. Silicon-based solar cells may be further classified into crystalline solar cells made of monocrystalline or polycrystalline silicon and thin film solar cells made of amorphous or microcrystalline silicon.

However, such a conventional solar cell exhibits a photoelectric efficiency of 10% or less, and in order to increase the competitiveness of a product, there is a demand for a technology development capable of improving the photoelectric efficiency.

Accordingly, the present invention has been made in view of such a need, and the present invention provides a solar cell module capable of improving photoelectric efficiency.

A solar cell module according to one aspect of the present invention suppresses the recombination of a solar cell that generates electrical energy by external light, and a light generating carrier that is installed outside the solar cell and generated inside the solar cell by external light. And a magnetic field supply unit configured to apply a magnetic field to the solar cell.

The magnetic field supply unit may include a plurality of magnets spaced apart from each other on one side of the solar cell. The magnets may be arranged in a plurality such that the N poles and the S poles face each other along a first direction, and may be arranged in a plurality of rows along a second direction perpendicular to the first direction. In addition, the magnets may be arranged in a plurality so that the same polarities face each other along a first direction, and may be arranged in a plurality of rows along a second direction perpendicular to the first direction. In addition, the magnets have a rod shape extending in a first direction and may be arranged in a plurality of rows along a second direction perpendicular to the first direction.

The magnetic field supply unit is installed in the form of a plate on one side of the solar cell and the first magnet having a surface facing the solar cell has a first polarity, and the line shape along the edge of the solar cell on the other side of the solar cell The solar cell may include a second magnet having a second polarity opposite to the first polarity of a surface facing the solar cell.

The magnetic field supply unit may include a plate-shaped plank stone attached to one side of the solar cell.

In one embodiment, the solar cell includes a first electrode, an n-type silicon layer formed on the first electrode, an intrinsic silicon layer formed on the n-type silicon layer, a p-type silicon layer formed on the intrinsic silicon layer, and It may include a second electrode formed on the p-type silicon layer. The intrinsic silicon layer may include amorphous silicon. In addition, the intrinsic silicon layer may include a plurality of amorphous silicon layers and a plurality of microcrystalline silicon layers alternately stacked on each other. The intrinsic silicon layer may include amorphous silicon and microcrystalline silicon randomly distributed in the nano-cluster state inside the amorphous silicon.

In another embodiment, the solar cell may include an intrinsic silicon layer formed on one surface of a substrate, a p-type silicon layer formed on the intrinsic silicon layer, an n-type silicon layer formed to be spaced apart from the p-type silicon layer on the intrinsic silicon layer, It may include a first electrode formed on the p-type silicon layer and a second electrode formed on the n-type silicon layer. The intrinsic silicon layer may include amorphous silicon. In addition, the intrinsic silicon layer may include a plurality of amorphous silicon layers and a plurality of microcrystalline silicon layers alternately stacked on each other. The intrinsic silicon layer may include amorphous silicon and microcrystalline silicon randomly distributed in the nano-cluster state inside the amorphous silicon.

In another embodiment, the solar cell includes an n-type semiconductor substrate, a first intrinsic semiconductor layer formed on one surface of the n-type semiconductor substrate, a p-type semiconductor layer formed on the first intrinsic semiconductor layer, and the p-type semiconductor layer. It may include a transparent electrode formed on the upper surface and the back electrode formed on the other surface of the n-type semiconductor substrate. The n-type semiconductor substrate may be formed of single crystal silicon or polycrystalline silicon. The first intrinsic semiconductor layer may be formed of amorphous silicon, silicon oxynitride, or silicon oxycarbide. The solar cell may further include a second intrinsic semiconductor layer formed between the n-type semiconductor substrate and the back electrode, and an n-type semiconductor layer formed between the second intrinsic semiconductor layer and the back electrode.

According to such a solar cell module, by applying a magnetic field to the solar cell, it is possible to suppress the recombination of the light generating carrier generated inside the solar cell by the incident light, thereby improving the photoelectric efficiency of the solar cell.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and that one or more other features It should be understood that it does not exclude in advance the possibility of the presence or addition of numbers, steps, actions, components, parts or combinations thereof. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have a variety of additional devices not described herein. When (layer) is mentioned as being located on another film (layer) or substrate, an additional film (layer) may be formed directly on or between the other film (layer) or substrate.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

1 is a view schematically showing a solar cell module according to an embodiment of the present invention.

Referring to FIG. 1, a solar cell module 100 according to an embodiment of the present invention includes a solar cell 200 and a magnetic field supply unit 300.

The solar cell 200 generates electrical energy in response to light supplied from the outside. As the solar cell 200, all kinds of solar cells, such as silicon-based, compound-based and organic-based, may be used.

The magnetic field supply unit 300 is installed outside the solar cell 200, and the magnetic field supply unit 300 is configured to suppress the recombination of the light generating carriers generated inside the solar cell 200 by external light. Apply a magnetic field to the

In general, the light generating carriers, ie, electron-hole pairs, generated inside the solar cell 200 by incident light are collected in the n-layer and p-layer by the draft by the internal electric field, respectively, to generate a current. In an ideal solar cell, an electric field is generated uniformly inside, but in a real solar cell, a space-charge density is increased by a coupling present in the inside of the solar cell, thereby decreasing the electric field in the solar cell. In addition, when the solar cell is exposed to light, a deterioration phenomenon called the staebler-wronski effect occurs, which decreases the solar cell characteristics as compared with the initial stage. The characteristics of the battery are reduced. This is because light-soaking increases the density of unsaturated bonds in the intrinsic layer, thereby reducing the internal electric field, thereby accelerating the recombination of electron-hole pairs generated by light.

Therefore, when the magnetic field is applied to the solar cell 200 through the magnetic field supply unit 300, the mobility of the electron-hole pair generated inside the solar cell 200 by the incident light is increased to recombine the electron-hole pair. In this way, the photoelectric efficiency of the solar cell 200 may be improved.

FIG. 2 is a diagram illustrating an embodiment of the magnetic field supply unit illustrated in FIG. 1.

1 and 2, the magnetic field supply unit 300 is installed on one surface of the solar cell 200, that is, on the side opposite to the surface on which solar light is incident. The magnetic field supply unit 300 includes a plurality of magnets 310 spaced apart from each other on the same plane. The magnets 310 may be arranged in succession so that the N poles and the S poles face each other along the first direction, and may be arranged in a plurality of rows along a second direction perpendicular to the first direction. Therefore, the magnetic field in the same direction as the line of magnetic force exiting the N pole of the magnets 310 toward the S pole is caught inside the solar cell 200.

3 is a view showing another embodiment of the magnetic field supply unit shown in FIG. 1.

1 and 3, the magnetic field supply unit 300 is disposed on one side of the solar cell 200, that is, on the side opposite to the surface on which the solar light is incident, and a plurality of magnets spaced apart from each other on the same plane. 320. The magnets 320 may be arranged in a row in such a manner that the same polarities face each other along the first direction, and may be arranged in a plurality of rows along a second direction perpendicular to the first direction. Meanwhile, when the magnets 320 are arranged along the second direction, the magnets 320 may be installed to have the same polarity disposed in a straight line, or may be installed such that the same polarities are arranged in a zigzag form.

4 is a view showing still another embodiment of the magnetic field supply unit shown in FIG. 1.

1 and 4, the magnetic field supply unit 300 is disposed on one surface of the solar cell 200, that is, on the side opposite to the surface on which the solar light is incident, and a plurality of magnets spaced apart from each other on the same plane. 330. The magnets 330 may have a rod shape extending in a first direction and may be arranged in a plurality of rows along a second direction perpendicular to the first direction. Meanwhile, when the magnets 330 are arranged along the second direction, the magnets 330 may be disposed to have the same polarity disposed in a straight line, or the magnets 330 may be disposed to be arranged in a zigzag form.

5 is a view showing a magnetic field supply unit according to another embodiment of the present invention.

Referring to FIG. 5, the magnetic field supply unit according to another exemplary embodiment of the present invention may include a first magnet 410 installed on one surface of the solar cell 200, that is, the surface opposite to the surface on which the sunlight is incident, and the solar cell. It may include a second magnet 420 is installed on the other surface of the 200, that is, the surface side of the sunlight is incident.

The first magnet 410 is installed in the form of a plate below the solar cell 200, the surface facing the solar cell 200 has a first polarity. On the contrary, the second magnet 420 is installed in the form of a line along the edge of the solar cell 200 on the top of the solar cell 200 so that sunlight can be incident on the solar cell 200, the solar cell 200 ) Has a second polarity opposite to the first polarity. For example, if the upper portion of the first magnet 410 has an N polarity, the lower portion of the second magnet 420 is installed to have an S polarity, and if the upper portion of the first magnet 320 has an S polarity, the second magnet ( The lower part of 320 is installed to have N polarity.

As such, when the first magnet 410 and the second magnet 420 are installed on both sides of the solar cell 200 to have different polarities, magnetic fields close to the longitudinal direction inside the solar cell 200 are provided. This formation can further improve the photoelectric efficiency as compared with the case where a magnetic field close to the lateral direction is formed as in the previous embodiments.

6 is a view showing another embodiment of the magnetic field supply unit.

Referring to FIG. 6, the magnetic field supply unit may include a plate-shaped planks 360 attached to one surface of the solar cell 200, that is, the side opposite to the surface on which the sunlight is incident. The plank stone 360 may be formed by, for example, applying metal powder onto an insulating plate such as rubber and then magnetizing it. Meanwhile, a thin insulating layer may be further formed between the solar cell 200 and the plank stone 360.

In this way, by attaching and using the plank stone 360 such as a rubber magnet to the solar cell 200, the magnetic field supply portion can be easily provided.

FIG. 7 is a diagram illustrating an embodiment of the solar cell illustrated in FIG. 1.

Referring to FIG. 7, the solar cell 200 includes a first electrode 220, an n-type silicon layer 230, an intrinsic silicon layer 240, a p-type silicon layer 250, and a second electrode 260. do.

The first electrode 220 is formed on the substrate 210 made of glass, plastic, or the like. The first electrode 220 may be formed of a conductive light reflecting material to reflect light incident from the upper direction. For example, the first electrode 220 may be formed of a single metal such as silver, aluminum, zinc, molybdenum, or an alloy thereof, or may be formed of an oxide of the single metal or alloy.

The n-type silicon layer 230 is formed on the first electrode 220. The n-type silicon layer 230 may be formed of a silicon material that is substantially doped with n-type impurities such as phosphorus (P), arsenic (As), and antimony (Sb). The n-type silicon layer 230 may be formed to include at least one of amorphous silicon and micro-crystalline silicon.

Intrinsic silicon layer 240 is formed on n-type silicon layer 230. The intrinsic silicon layer 240 may be formed of, for example, amorphous silicon.

8 and 9 illustrate another embodiment of the intrinsic silicon layer illustrated in FIG. 7.

Referring to FIG. 8, the intrinsic silicon layer 240 may include a plurality of amorphous silicon layers 242 and a plurality of microcrystalline silicon layers 244 stacked alternately with each other. In this case, the microcrystalline silicon layer 244 refers to a layer on which nanoscale silicon crystals having a crystal size of several tens of nm to several hundred nm are formed as a boundary material between amorphous and single crystal silicon. 8 illustrates a structure in which two amorphous silicon layers 242 and two microcrystalline silicon layers 244 are alternately stacked, but in practice, a larger number of amorphous silicon layers 242 and microcrystalline layers are formed. Silicon layers 244 may be formed. The amorphous silicon layer 242 and the microcrystalline silicon layer 244 may have different thicknesses, or may be formed to have the same thickness. In addition, the amorphous silicon layers 242 and the microcrystalline silicon layers 244 may be formed to have the same number of layers or different numbers of layers.

In the photoelectric device using silicon, the photoelectric efficiency is determined according to the light absorption rate and the photoelectric conversion efficiency of the intrinsic silicon layer. By forming, the photoelectric efficiency of the intrinsic silicon layer 240 can be improved.

Referring to FIG. 9, the intrinsic silicon layer 240 includes amorphous silicon 246 and microcrystalline silicon 248 randomly distributed in the form of a nano cluster within the amorphous silicon 246. The microcrystalline silicon 248 in the form of a nano cluster means that silicon crystals having a nanoscale crystal size as a boundary material between amorphous and single crystal silicon are formed in a cluster form. For example, the intrinsic silicon layer 240 may be formed to a thickness of about 300 to 500 nm, and the cluster size of the microcrystalline silicon 248 may be formed to about 1 to 100 nm.

As such, when the microcrystalline silicon 248 having excellent photoelectric conversion efficiency is formed in the form of a nanocluster inside the amorphous silicon 246 having excellent light absorption, the intrinsic silicon layer 240 having both excellent light absorption and electron mobility is formed. The photoelectric efficiency of the intrinsic silicon layer 240 is improved to be formed. In addition, since the amorphous silicon 246 and the microcrystalline silicon 248 absorb light of different wavelength bands, the microcrystalline silicon 248 absorbs the light of the wavelength bands not absorbed by the amorphous silicon 246, thereby improving photoelectric efficiency. Can be improved.

Referring to FIG. 7, the p-type silicon layer 250 is formed on the intrinsic silicon layer 240. The p-type silicon layer 250 may be formed of a silicon material that is substantially doped with p-type impurities such as boron (B) and potassium (K). The p-type silicon layer 250 may be formed to include at least one of amorphous silicon and microcrystalline silicon.

The second electrode 260 is formed on the p-type silicon layer 250. The second electrode 260 is formed of a conductive light transmitting material in order to transmit light incident from the outside. For example, the second electrode 260 may be formed of tin oxide, zinc oxide, indium tin oxide, indium zinc oxide, or the like.

As such, when the n-type silicon layer 230, the intrinsic silicon layer 240, and the p-type silicon layer 250 are sequentially stacked between the first electrode 220 and the second electrode 260, the pins PIN may be formed. A photodiode having a structure is formed, and in response to light incident from the outside, a photoelectric effect is generated. On the other hand, since the p-type silicon layer 250 should be disposed on the side where light is incident, the first electrode 220 and the n-type silicon layer 230, the second electrode 260, and the p-type silicon according to the incident direction of light. The location of layers 250 may be interchanged.

10 is a view showing another embodiment of the solar cell shown in FIG. 1.

Referring to FIG. 10, the solar cell 400 according to another embodiment may include an intrinsic silicon layer 420 formed on one surface of the substrate 410, a p-type silicon layer 430 formed on the intrinsic silicon layer 420, and an intrinsic The n-type silicon layer 440 formed on the silicon layer 420 to be spaced apart from the p-type silicon layer 430, the first electrode 450 and the n-type silicon layer 440 formed on the p-type silicon layer 430. And a second electrode 460 formed thereon.

The intrinsic silicon layer 420 is formed on one surface of the substrate 410 such as glass or plastic. The intrinsic silicon layer 420 may be formed of amorphous silicon. In contrast, the intrinsic silicon layer 420 has a structure including a plurality of amorphous silicon layers and a plurality of microcrystalline silicon layers alternately stacked with each other, as shown in FIG. 8, or shown in FIG. 9. As described above, it may have a structure including amorphous silicon and microcrystalline silicon randomly distributed in the form of nano clusters inside the amorphous silicon.

The p-type silicon layer 430 is formed in some region on the intrinsic silicon layer 420. For example, the p-type silicon layer 430 is formed in a stripe shape extending in one direction. Since the p-type silicon layer 430 may be formed of the same material as illustrated in FIG. 7, a detailed description thereof will be omitted.

The n-type silicon layer 440 is formed to be spaced apart from the p-type silicon layer 430 at predetermined intervals on the same surface of the intrinsic silicon layer 420 on which the p-type silicon layer 430 is formed. For example, the n-type silicon layer 440 is formed in a stripe shape extending in the same direction as the p-type silicon layer 430 in a state spaced apart from the p-type silicon layer 430 by a predetermined interval. Since the n-type silicon layer 440 may be formed of the same material as illustrated in FIG. 7, a detailed description thereof will be omitted.

The first electrode 450 is formed on the p-type silicon layer 430, and the second electrode 460 is formed on the n-type silicon layer 440. For example, the first electrode 450 and the second electrode 460 may be formed of a conductive light reflecting material to reflect light incident from the substrate 410 side. For example, the first electrode 450 and the second electrode 460 may be formed of a single metal such as silver, aluminum, zinc, molybdenum, or an alloy thereof, or may be formed of an oxide of the single metal or alloy. . In contrast, the first electrode 450 and the second electrode 460 are formed of a conductive light transmitting material capable of transmitting light, and the first electrode 450 and the second electrode 460 made of a conductive light transmitting material. The light reflection material may be formed on the structure.

As such, when the intrinsic silicon layer 420 is directly formed on the substrate 410, and the p-type silicon layer 430 and the n-type silicon layer 440 are formed on the same surface of the intrinsic silicon layer 420, Light incident from the side of the substrate 410 directly enters the intrinsic silicon layer 420, thereby improving utilization efficiency of sunlight.

11 is a view showing still another embodiment of the solar cell shown in FIG.

Referring to FIG. 11, a solar cell 500 according to another embodiment may include an n-type semiconductor substrate 510, a first intrinsic semiconductor layer 520, a p-type semiconductor layer 530, a transparent electrode 540, and a back surface. Electrode 550.

The n-type semiconductor substrate 510 may be formed of, for example, monocrystalline silicon or polycrystalline silicon doped with n-type impurities such as phosphorus (P), arsenic (As), and antimony (Sb) at low concentrations. The n-type semiconductor substrate 510 may be formed to a thickness of several tens of micrometers to several hundreds of micrometers, for example, to a thickness of about 200 micrometers. Unevenness of several micrometers to several tens of micrometers may be formed on the first surface of the n-type semiconductor substrate 510, that is, the surface where sunlight is incident. The unevenness formed on the first surface of the n-type semiconductor substrate 510 reduces the incident light reflected off the surface and traps the incident light to improve photoelectric conversion efficiency.

The first intrinsic semiconductor layer 520 is formed on the first surface of the n-type semiconductor substrate 510. The first intrinsic semiconductor layer 520 may be formed of amorphous silicon, silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon carbide (SiC), or the like. . The first intrinsic semiconductor layer 520 may be formed to a thickness of several nm to several tens of nm, for example, a thin thickness of about 5 nm.

The p-type semiconductor layer 530 is formed on the first intrinsic semiconductor layer 520. The p-type semiconductor layer 530 is formed of, for example, amorphous silicon in which p-type impurities such as boron (B) and potassium (K) are doped at low concentration.

The transparent electrode 540 is formed on the p-type semiconductor layer 530. The transparent electrode 540 is formed of a conductive light transmitting material in order to transmit solar light incident from the top. For example, the transparent electrode 540 may be formed of indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), or the like. The transparent electrode 540 may be formed to a thickness of several tens of nm to several hundred nm, for example, to a thickness of about 100 nm.

The back electrode 550 is formed on a second surface opposite to the first surface of the n-type semiconductor substrate 510. The back electrode 550 may be formed of a conductive light transmitting material such as indium tin oxide (ITO), tin oxide (SnO), and zinc oxide (ZnO). In contrast, the back electrode 550 is formed of a single metal such as silver (Ag), aluminum (Al), zinc (Zn), molybdenum (Mo), or an alloy thereof, or an oxide of the single metal or alloy. Can be. In addition, the back electrode 550 may be formed of a conductive aluminum tape or the like.

As such, by forming the first intrinsic semiconductor layer 520 having a thickness that substantially does not contribute to power generation between the n-type semiconductor substrate 510 and the p-type semiconductor layer 530, the monocrystalline silicon and the amorphous silicon may be formed. By reducing the crystal defects at the interface, it is possible to improve the properties of the heterojunction interface. In this case, when silicon oxynitride (SiON) or silicon oxycarbide (SiOC) having a relatively large band gap energy is used as the first intrinsic semiconductor layer 520, the light absorption rate of the first intrinsic semiconductor layer 520 is lowered. The light absorbed and lost in the intrinsic semiconductor layer 520 itself may be reduced, thereby improving the photoelectric efficiency of the solar cell 500.

Meanwhile, the solar cell 500 is formed between the second intrinsic semiconductor layer 560 and the second intrinsic semiconductor layer 560 and the back electrode 550 formed between the n-type semiconductor substrate 510 and the back electrode 550. The semiconductor device may further include an n-type semiconductor layer 570.

The second intrinsic semiconductor layer 560 is formed directly on the second surface of the n-type semiconductor substrate 510. Like the first intrinsic semiconductor layer 520, the second intrinsic semiconductor layer 560 is amorphous silicon, silicon oxynitride (SiON), silicon oxycarbide (SiOC), or silicon carbide (silicon). carbide, SiC) or the like. The second intrinsic semiconductor layer 560 may be formed to a thickness of several nm to several tens of nm, for example, a thin thickness of about 5 nm.

The n-type semiconductor layer 570 is formed of, for example, amorphous silicon in which n-type impurities such as phosphorus (P), arsenic (As), and antimony (Sb) are heavily doped. The n-type semiconductor layer 570 may be formed to a thickness of several nm to several tens of nm, for example, to a thickness of about 20 nm.

As such, by forming the second intrinsic semiconductor layer 560 and the n-type semiconductor layer 570 made of n + amorphous silicon on the second surface of the n-type semiconductor substrate 510, a so-called back surface field (BSF) structure Is formed. Through the formation of the BSF structure, the photoelectric efficiency of the solar cell 500 may be further improved.

Meanwhile, according to the present invention, in addition to some embodiments of the solar cell described above, various solar cells such as crystalline substrate type solar cell, thin film type solar cell, compound thin film solar cell, dye-sensitized solar cell, organic solar cell, etc. may be used. Can be.

According to such a solar cell module, by applying a magnetic field to the solar cell, it is possible to suppress the recombination of the light generating carrier generated inside the solar cell by the incident light, thereby improving the photoelectric efficiency of the solar cell.

In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1 is a view schematically showing a solar cell module according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating an embodiment of the magnetic field supply unit illustrated in FIG. 1.

3 is a view showing another embodiment of the magnetic field supply unit shown in FIG. 1.

4 is a view showing still another embodiment of the magnetic field supply unit shown in FIG. 1.

5 is a view showing a magnetic field supply unit according to another embodiment of the present invention.

6 is a view showing another embodiment of the magnetic field supply unit.

FIG. 7 is a diagram illustrating an embodiment of the solar cell illustrated in FIG. 1.

8 and 9 illustrate another embodiment of the intrinsic silicon layer illustrated in FIG. 7.

10 is a view showing another embodiment of the solar cell shown in FIG. 1.

11 is a view showing still another embodiment of the solar cell shown in FIG.

<Short Description of Main Drawing Numbers>

100: solar cell module 200: solar cell

210: substrate 220 first electrode

230: n-type silicon layer 240: intrinsic silicon layer

250: p-type silicon layer 260: second electrode

300: magnetic field supply unit 310: a magnet

Claims (18)

Solar cells for generating electrical energy by external light; And And a magnetic field supply unit installed outside of the solar cell and configured to apply a magnetic field to the solar cell in order to suppress recombination of a light generating carrier generated inside the solar cell by external light. According to claim 1, wherein the magnetic field supply unit A solar cell module comprising a plurality of magnets spaced apart from each other on one side of the solar cell. The method of claim 2, wherein the magnets A plurality of N pole and S pole are arranged to face each other along the first direction, the solar cell module, characterized in that arranged in a plurality of rows in a second direction perpendicular to the first direction. The method of claim 2, wherein the magnets A plurality of solar cells module is arranged so that the same polarity facing each other along the first direction, arranged in a plurality of rows in a second direction perpendicular to the first direction. The method of claim 2, wherein the magnets A solar cell module having a rod shape extending in a first direction and arranged in a plurality of rows in a second direction perpendicular to the first direction. According to claim 1, wherein the magnetic field supply unit A first magnet installed on one surface side of the solar cell and having a first polarity on a surface facing the solar cell; And On the other side of the solar cell is installed in the form of a line along the edge of the solar cell, the surface facing the solar cell comprises a second magnet having a second polarity opposite to the first polarity Solar modules. According to claim 1, wherein the magnetic field supply unit Solar cell module, characterized in that it comprises a plate-shaped planks attached to one side of the solar cell. The method of claim 1, wherein the solar cell A first electrode; An n-type silicon layer formed on the first electrode; An intrinsic silicon layer formed on the n-type silicon layer; A p-type silicon layer formed on the intrinsic silicon layer; And And a second electrode formed on the p-type silicon layer. The method of claim 8, wherein the intrinsic silicon layer is A solar cell module comprising amorphous silicon. The method of claim 8, wherein the intrinsic silicon layer is A solar cell module comprising a plurality of amorphous silicon layers and a plurality of microcrystalline silicon layers alternately stacked on each other. The method of claim 8, wherein the intrinsic silicon layer is A solar cell module comprising amorphous silicon and microcrystalline silicon randomly distributed in a nanocluster form within the amorphous silicon. The method of claim 1, wherein the solar cell An intrinsic silicon layer formed on one surface of the substrate; A p-type silicon layer formed on the intrinsic silicon layer; An n-type silicon layer formed on the intrinsic silicon layer to be spaced apart from the p-type silicon layer; A first electrode formed on the p-type silicon layer; And And a second electrode formed on the n-type silicon layer. The method of claim 12, wherein the intrinsic silicon layer A solar cell module comprising amorphous silicon. The method of claim 12, wherein the intrinsic silicon layer A solar cell module comprising a plurality of amorphous silicon layers and a plurality of microcrystalline silicon layers alternately stacked on each other. The method of claim 12, wherein the intrinsic silicon layer A solar cell module comprising amorphous silicon and microcrystalline silicon randomly distributed in a nanocluster form within the amorphous silicon. The method of claim 1, wherein the solar cell n-type semiconductor substrate; A first intrinsic semiconductor layer formed on one surface of the n-type semiconductor substrate; A p-type semiconductor layer formed on the first intrinsic semiconductor layer; A transparent electrode formed on the p-type semiconductor layer; And And a back electrode formed on the other surface of the n-type semiconductor substrate. The method of claim 16, The n-type semiconductor substrate includes any one selected from monocrystalline silicon and polycrystalline silicon, The first intrinsic semiconductor layer is a solar cell module comprising any one selected from amorphous silicon, silicon oxynitride and silicon oxycarbide. The method of claim 16, A second intrinsic semiconductor layer formed between the n-type semiconductor substrate and the back electrode; And And an n-type semiconductor layer formed between the second intrinsic semiconductor layer and the back electrode.

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