KR102451084B1 - High efficiency solar cell module - Google Patents

Abstract

According to an embodiment, provided is a high-efficiency solar module comprising a photoelectric conversion part including a first and a second photoelectric conversion part, the photoelectric conversion part including a plurality of photoelectric conversion parts stacked on one another, wherein the second photoelectric conversion part has a first semiconductor layer with a first conductivity type and a second semiconductor layer with a second conductivity type, which have crystal structures different from each other, wherein the photoelectric conversion part includes a first photoelectric conversion part including a photoelectric conversion layer composed of a perovskite compound, and a second photoelectric conversion part including a semiconductor substrate such as a silicon substrate, and wherein the second photoelectric conversion part includes a semiconductor substrate, a first semiconductor layer formed on one surface such as a front surface of the semiconductor substrate separately from the semiconductor substrate, and a second semiconductor layer formed on another surface such as a rear surface of the semiconductor substrate separately from the semiconductor substrate and having a different crystal structure from the crystal structure of the first semiconductor layer.

Description

High-efficiency solar module {HIGH EFFICIENCY SOLAR CELL MODULE}

The present invention relates to a high-efficiency solar module, and to a solar module having high efficiency and high performance by improving the structure.

A photovoltaic module including a semiconductor substrate has excellent efficiency and is widely used. However, a solar module including a semiconductor substrate also has a certain limit in improving the efficiency, so solar modules having various structures capable of improving the photoelectric conversion efficiency have been proposed. A photovoltaic module including a perovskite compound that absorbs light of a short wavelength and performs photoelectric conversion using a short wavelength as a photoelectric conversion unit has been proposed. In a photovoltaic module including such a perovskite compound as a photoelectric conversion unit, it is common to implement excellent efficiency by stacking another photoelectric conversion unit composed of a different structure or material.

In the photovoltaic module having such a structure, it is very important that a plurality of photoelectric conversion units stacked on each other have excellent connection characteristics in order to improve efficiency. In this case, in order to improve the efficiency of the photovoltaic module, at least one photoelectric conversion unit may include a passivation layer for improving passivation characteristics, and the passivation layer may be composed of an insulating layer made of an insulating material. When such an insulating layer is located between the plurality of photoelectric conversion units, the passivation layer becomes a big obstacle to the movement of carriers, and there is a difficulty in improving the efficiency of the solar module.

The present invention has been devised to solve the above-described problems, and an object of the present invention is to provide a solar module having excellent efficiency. In particular, the present embodiment relates to a photovoltaic module module having a tandem structure including a light absorption layer including a perovskite compound and another photoelectric absorption layer having a material or structure different from this and having excellent efficiency.

A first electrode according to the present invention, a first charge transport layer positioned on the first electrode, and an upper light absorbing layer having a flat light absorbing surface on the first charge transport layer and a light scattering pattern for dispersing light And, it provides a high-efficiency solar module comprising a second charge transport layer positioned on the upper light absorption layer and a second electrode positioned on the second charge transport layer.

The light scattering pattern has a protrusion shape protruding upward from the light absorbing surface, and when the total height of the upper light absorbing layer is 100, the light scattering pattern has a height of 10 to 70.

The light absorbing surface portion and the light scattering pattern may be formed of different materials.

The first and second electrodes are Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO) Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , characterized in that it is composed of at least one of graphene, Al, Ag, Cu, Mg, Mo, Ti and Au.

The first charge transfer layer contains a conductive polymer, or contains silicon or a silicon alloy composition, and the second charge transfer layer is made of a material film having the function opposite to that of the first charge transfer layer, TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotube, C ₆ 0 (fullerene), PCBM ([6,6]-Phenyl-C61-butyric Acid Methyl Ester) at least any one characterized in that it contains

The upper light absorption layer uses a material having a chemical composition of AMX ₃ , wherein A is any one of metal elements or organic compounds of MA, FA, Cs, and Rb, M is any one of metal cations, and X is an oxide or CL It is characterized in that it is formed by combining any one or more of halogen atoms of (Chlorine), Br (Bromine), and I (Iodine).

In addition, a first battery unit absorbing light of a first wavelength according to the present invention, a second battery unit absorbing light of a second wavelength, and a bonding layer connecting the first battery unit and the second battery unit, The first cell unit includes a substrate, a first electrode formed on the substrate, a first silicon layer formed on the first electrode, a lower light absorption layer formed on the first silicon layer, and a second silicon formed on the lower light absorption layer layer, wherein the second battery unit includes a first charge transfer layer formed on the bonding layer, and an upper light absorption layer having a flat light absorption surface portion on the first charge transfer layer and a light distribution pattern for dispersing light; , It provides a high-efficiency solar module comprising a second charge transport layer positioned on the upper light absorption layer, and a second electrode positioned on the second charge transport layer.

The second cell unit includes a perovskite structure to absorb light of a wavelength of 800 nm or less, and the first cell unit is characterized in that it absorbs light of a wavelength of 800 nm or more.

The light absorption surface portion and the light dispersion pattern are formed of different materials, and the light diffusion pattern has a protrusion shape protruding upward from the light absorption surface portion. When the total height of the upper light absorption layer is 100, the light diffusion pattern The height of is characterized in that 10 to 70.

In addition, the substrate according to the present invention, a first electrode formed on the substrate, a first charge transfer layer and a first silicon layer alternately formed on the first electrode, and sequentially on the first charge transfer layer an upper light absorption layer and a second charge transfer layer formed thereon, a lower light absorption layer and a second silicon layer sequentially formed on the first silicon layer, and a second electrode formed on the second charge transfer layer and the second silicon layer; high-efficiency solar modules.

When the total area of the first electrode is 100, the area of the upper light absorption layer and the lower light absorption layer is characterized in that the upper light absorption layer is 50 to 70%, and the lower light absorption layer is 30 to 50%.

In addition, the substrate according to the present invention, a first electrode formed on the substrate, a first carrier layer formed on the first electrode, and an upper light absorption layer and a lower light absorption layer alternately formed on the first carrier layer, , to provide a high-efficiency solar module comprising a second carrier layer formed on the upper light absorption layer and the lower light absorption layer, and a second electrode formed on the second carrier layer.

The first and second electrodes are Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO) Oxide), gallium indium oxide (GIO), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), and indium zinc-tin oxide (IZTO) are used.

The first charge transfer layer contains a conductive polymer, or contains silicon or a silicon alloy composition, and the second charge transfer layer is made of a material film having the function opposite to that of the first charge transfer layer, TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotube, C ₆ 0 (fullerene), PCBM ([6,6]-Phenyl-C61-butyric Acid Methyl Ester) at least any one characterized in that it contains

As described above, in the present invention, in a tandem structure including an upper light absorption layer including a perovskite compound and a lower light absorption layer including a semiconductor, efficiency and productivity can be improved through a light dispersion pattern.

In addition, by forming the upper light absorbing layer and the lower light absorbing layer on the same plane, a photoelectric reaction can be obtained from light of a wide wavelength, thereby improving the efficiency of the solar module.

In addition, it is possible to slim the module through horizontal stacking rather than vertical stacking of perovskite cells and general silicon cells, so that the module thickness can be made thin. can

In addition, the service life of the light absorbing layer may be increased by disposing a transmission layer and an electrode above and below the light absorbing layer.

1 is a cross-sectional conceptual view of a high-efficiency solar module according to an embodiment of the present invention.
2 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of an embodiment.
3 to 7 are cross-sectional views for explaining a method of manufacturing a high-efficiency solar module according to an embodiment of the present invention.
8 is a cross-sectional conceptual view of a high-efficiency solar module according to another embodiment of the present invention.
9 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of another embodiment.
10 is a cross-sectional conceptual view of a high-efficiency solar module according to another embodiment of the present invention.
11 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of another embodiment.
12 to 17 are cross-sectional views for explaining a method of manufacturing a high-efficiency solar module according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments allow the disclosure of the present invention to be complete, and the scope of the invention to those of ordinary skill in the art completely It is provided to inform you. In the drawings, like reference numerals refer to like elements.

It is intended to clarify that the classification of the constituent parts in the present specification is merely classified by the main function that each constituent unit is responsible for. That is, two or more components to be described below may be combined into one component, or one component may be divided into two or more for each more subdivided function. In addition, each of the constituent units to be described below may additionally perform some or all of the functions of other constituent units in addition to the main function it is responsible for. Of course, it can also be performed by being dedicated to it. Accordingly, the existence or non-existence of each component described through the present specification should be interpreted functionally. For this reason, it is clearly stated that the configuration of the constituent parts of the high-efficiency solar module of the present invention may be different within the limit capable of achieving the object of the present invention.

As used herein, relational terms such as first and second, upper and lower, etc. are used to distinguish one entity or action from another without necessarily requiring or implying an actual relationship or order between those entities or actions. can only be used for The terms “comprises”, “comprising” or other variations thereof indicate that a process, method, product, or apparatus comprising a list of components does not contain only components, but such process, method, product. It is intended to cover non-exclusive inclusions, which may include , , or other components not expressly listed or implicit in the device. An element that proceeds to "comprises an one of" excludes, without further limitation, the presence of additional identical elements in a process, method, product, or apparatus that includes the element.

1 is a cross-sectional conceptual view of a high-efficiency solar module according to an embodiment of the present invention. 2 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of an embodiment.

1 and 2, the high-efficiency solar module according to this embodiment includes a first electrode 100, a first charge transfer layer 120 positioned on the first electrode 100, and the first The upper light absorbing layer 130 positioned on the first charge transport layer 120 , the second charge transport layer 140 positioned on the upper light absorbing layer 130 , and the second charge transport layer 140 positioned on the second charge transport layer 140 . A second electrode 150 is included.

Various materials having electrical conductivity may be used for the first electrode 100 . Of course, it is also possible to use a material having the same property of transmitting light. In addition, it may be manufactured in one layer or multiple layers, and various conductive materials may be mixed and manufactured. Examples of the first electrode 100 include Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO). Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and may be composed of at least one of Au.

The first charge transport layer 120 may be composed of at least one layer, and may be provided with any one of a material having an electron transport, hole transport, electron blocking, and hole blocking function.

In this embodiment, it is effective to use a carrier function material having opposite functions for the first charge transfer layer 120 and the second charge transfer layer 140 . For example, when the first charge transport layer 120 has an electron transport or electron blocking function, it is effective that the second charge transport layer 140 has a hole transport or hole blocking function. That is, when the first charge transport layer 120 has an electron transport function, it is effective for the second charge transport layer 140 to have a hole transport function. Also, when the first charge transport layer 120 is made of a material having an electron transport function, a material having a hole blocking function may be further included. Of course, when the second charge transport layer 140 is made of a material having a hole transport function, a material having an electron blocking function may be further included.

In this embodiment, a hole transport layer that transports holes to the first charge transport layer 130 may be used. Here, the hole transport layer may include a conductive polymer. The conductive polymer material is, for example, polyaniline, polypyrrole, polythiophene, poly-3,4-ethylenedioxythiophene-polystyrenesulfonate (PEDOT-PSS), poly-[bis(4-phenyl)(2,4, At least one of 6-trimethylphenyl)amine] (PTAA), Spiro-MeOTAD, or polyaniline-camphorsulfonic acid (PANI-CSA) may be used, but is not limited thereto.

It is effective to use silicon or a silicon alloy composition as the hole transport layer, it is effective to have P-type silicon properties through doping, and it is possible to control the band gap and the work function through doping concentration control. That is, the hole transport layer may be a p-type layer and include silicon. Of course, it is effective to include at least one of amorphous silicon or amorphous silicon oxide, amorphous silicon nitride, amorphous silicon carbide and nitride oxide, and amorphous silicon germanium.

The upper light absorption layer 130 may absorb light having a wavelength of 300 to 800 nm to generate electron hole pairs. It is effective that the upper light absorption layer 130 has a perovskite structure. In the upper light absorption layer 130 , when sunlight is absorbed, electrons maintaining a stable state in the upper light absorption layer 130 are excited, and each of the excited electrons and the holes formed by the excited electrons move to the adjacent charge transport layer. will do At this time, electrons move to the charge transport layer having a function of transporting electrons, and holes move to the charge transport layer having a function of transporting holes.

It is effective to use a material having the chemical composition of AMX ₃ for the upper light absorption layer 130 . Here, A may be any one of a metallic element or an organic compound of MA, FA, Cs, and Rb. M is any one of metal cations, and X may be formed by combining any one or more of oxides or halogen atoms of CL (Chlorine), Br (Bromine), and I (Iodine). A atom is located at each vertex of the cubic unit cell, M atom is located at the body-center position, that is, the center, and the X atom is located at the face-center position, that is, the center of each face.

It is possible to use MA (Methylamminium) PbI _{3 as the MA system, and it is effective to use FAPbI 3 as} the FA (Formamidinium) system. It is effective that the band gap of MAPbI ₃ is 1.55 to 1.6 eV, and the band gap of FAPbI ₃ is about 1.45 eV. In addition, it is effective to use FA _1-x Cs _x PbBr _y I _3-y (where 0≤x≤1 and 0≤y≤3) as the FA system. In this embodiment, it is preferable to use an FA system as the upper light absorption layer 130 . The FA-based perovskite absorption layer has better high-temperature stability compared to the MA-based, and can suppress the formation of undesired delta (δ)-phase FA-based compounds due to the addition of Cs. And, it is possible to add Br to the FA system. The addition of Br can increase the band gap of the FA-based perovskite absorption layer to a degree similar to that of the existing MA-based perovskite absorption layer. If the bandgap energy is included in the high range, the high bandgap perovskite layer absorbs the light of a short wavelength and reduces the thermal loss caused by the difference between the photon energy and the bandgap to generate a high voltage. will increase the efficiency of

Of course, the present invention is not limited thereto, and the upper light absorption layer 130 may include halide perovskite or metal halide perovskite. Organic halide perovskites are for example CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbCl _x Br _3-x , HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC (NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbCl _x Br _3-x (0≤x≤1, 0≤y ≤1). A compound in which organic ammonium of an organic halide is partially doped with Cs or Rb may also be used. In addition, the metal halide perovskite may include, for example, lead iodide (PbI ₂ ), bromine iodide (PbBr), or lead chloride (PbCl ₂ ).

It is effective that the upper light absorption layer 130 of this embodiment has a light dispersion pattern 132 capable of improving the efficiency of the solar module by dispersing light of a short wavelength. It is effective that the upper light absorption layer 130 includes a light absorption surface portion 131 and a plurality of light dispersion patterns 132 protruding from the light absorption surface portion 131 .

It is effective that the light absorption surface portion 131 is formed on the first charge transfer layer 120 in a flat plate shape. It is effective that the light dispersion pattern 132 has a protrusion shape in the form of a square pillar and uniformly protrudes from the light absorption surface portion 131 . It is effective that the light absorption surface part 131 and the light dispersion pattern 132 are made of the same material. When the total thickness of the upper light absorption layer 130 is 100, the light dispersion pattern 132 has a thickness of 10 to 70 is effective. In the present embodiment, since the light dispersion pattern 132 protrudes, sunlight traveling straight from the upper portion is partially refracted or penetrated by the light dispersion pattern to disperse the light. When the thickness, that is, the height of the light dispersion pattern 132 is less than 10, the efficiency due to the light dispersion is insufficient. That is, the efficiency improvement is 0.5% or less. When the height of the light dispersion pattern 132 is greater than 70, the formation of the subsequent second charge transfer layer 140 is not smooth due to the aspect ratio difference according to the step difference, so that problems such as the formation of internal voids occur. Therefore, it is effective that the height of the light dispersion pattern 132 is smaller than 70% of the entire upper light absorption layer 100 .

In the previous description, the light absorption surface portion 131 and the light dispersion pattern 132 were made of the same material, but the present embodiment is not limited thereto, and it is more effective to use different materials as shown in the drawings. It is effective to form the light absorption surface part 131 with a low bandgap FA-based material, and form the light-dispersive pattern 132 with an MA-based material having a high bandgap thereon. Through this, light efficiency due to different band gaps may be increased.

When the total area of the light absorption surface part 131 is 100, it is effective that the area occupied or covered by the protruding total light dispersion pattern 132 is 30 to 70. As mentioned above, when it is less than 30, effective efficiency does not occur, and when it is greater than 70, there is a disadvantage in that the subsequently formed/deposited layer is not effectively formed as described above.

In addition, when the light absorption surface portion 131 and the light dispersion pattern 132 are formed of different materials, 30 to 70% of the light transmitted to the upper light absorption layer 130 is transmitted to the light dispersion pattern 132 . After passing through, it is transmitted to the light absorption surface part 131 . Here, the characteristics of the light to be extinguished and canceled are omitted. In this case, the movement path of light becomes longer in some regions, and generation of electron-hole pairs increases according to the movement path lengthened by the difference in the band gap. In the present embodiment, the reason that the light absorption surface portion 131 is formed in a flat plane is because provided light is reflected at the boundary of the light absorption surface portion 131 and transmitted back to the upper light absorption layer 130 to increase efficiency. .

The second charge transport layer 140 may be composed of at least one layer, and may be provided with any one of a material having an electron transport, hole transport, electron blocking, and hole blocking function. As mentioned above, it is effective to fabricate the second charge transfer layer 140 as a material film having a function opposite to that of the first charge transfer layer 120 .

An electron transport layer that transports electrons to the second charge transport layer 140 may be used. The electron transport layer is TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotube, C ₆ 0 (fullerene), PCBM([6,6]-Phenyl-C61-butyric Acid It is effective to use at least one of Methyl Ester).

Of course, it is also possible to fabricate a layer containing n-type silicon. That is, it is effective to have N-type silicon characteristics through doping, and it is possible to control the band gap and the work function through doping concentration control. That is, the electron transport layer may be an N-type layer and include silicon. Of course, it is effective to include at least one of amorphous silicon or amorphous silicon oxide, amorphous silicon nitride, amorphous silicon carbide and nitride oxide, and amorphous silicon germanium. The second charge transfer layer 140 may transfer electrons generated in the upper light absorption layer 130 to the second electrode 150 .

Various materials having electrical conductivity may be used for the second electrode 150 . Of course, it is also possible to use a material having the same property of transmitting light. In addition, it may be manufactured in one layer or multiple layers, and various conductive materials may be mixed and manufactured. Examples of the second electrode 150 include Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO). Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and may be composed of at least one of Au.

Hereinafter, a method of manufacturing a high-efficiency solar module according to the above-described embodiment will be described with reference to the drawings.

3 to 7 are cross-sectional views for explaining a method of manufacturing a high-efficiency solar module according to an embodiment of the present invention.

As shown in FIG. 3 , a first charge transfer layer 120 is formed on the first electrode 100 . In this case, it is effective that the first electrode 100 is formed on a substrate or a carrier. In this case, it is effective to use a light-transmitting material as the first electrode 100 , and the first electrode 100 is formed using the aforementioned material. Thereafter, the first charge transfer layer 120 is formed on the first electrode 100 using the aforementioned materials.

As shown in FIG. 4 , an upper light absorption layer 130 is formed on the first charge transfer layer 120 . In this case, the upper light absorption layer 130 is formed using the aforementioned material, but in this embodiment, it is effective to form the MA-based or FA-based material to a thickness of a predetermined height.

As shown in FIG. 5 , a light dispersion pattern 132 is formed by removing a portion of the upper light absorption layer 130 . To this end, although not shown, it is effective to perform a photolithography process. First, a photoresist layer is applied on the upper light absorption layer 130 . Thereafter, the photoresist layer is patterned to expose a region where the upper light absorption layer 130 is not formed. A portion of the exposed upper light absorption layer 130 is removed, and the photoresist pattern is removed to form the upper light absorption layer 130 having the light dispersion pattern 132 . Here, it is effective to remove the exposed upper light absorbing layer 130 through a sandblasting process. Through this, a fine step is formed on the surface of the surface to be removed of the upper light absorption layer 130 , so that the adhesive force may increase when the subsequent second charge transfer layer 140 is formed. In addition, it is easy to adjust the height of the light dispersion pattern by adjusting the power of the sandblasting process.

6 and 7 , the second charge transfer layer 140 is formed on the upper light absorption layer 130 on which the light dispersion pattern 132 is formed. By forming the second electrode 150 on the second charge transfer layer 140, the high-efficiency solar module of this embodiment is manufactured.

Hereinafter, a high-efficiency solar module according to another embodiment will be described with reference to the drawings. Among the descriptions to be described below, descriptions that overlap with those of the above-described embodiments will be omitted. In addition, the techniques of the description to be described later can be applied to the above-described embodiments.

8 is a cross-sectional conceptual view of a high-efficiency solar module according to another embodiment of the present invention. 9 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of another embodiment.

As shown in FIGS. 8 and 9 , the high-efficiency solar module of this embodiment includes a first battery unit 1000 that absorbs light of a first wavelength, and a second battery unit 2000 that absorbs light of a second wavelength. ) and a bonding layer 3000 connecting the first battery unit 1000 and the second battery unit 2000 .

It is effective that the second cell unit 2000 absorbs light of a wavelength of 800 nm or less, including the perovskite structure, and the first cell unit 1000 absorbs light of a wavelength of 800 nm or more.

The first battery unit 1000 includes a substrate 1100 , a first electrode 1200 formed on the substrate 1100 , a first silicon layer 1300 formed on the first electrode 1200 , and a first silicon It includes a lower light absorption layer 1400 formed on the layer 1300 , and a second silicon layer 1500 formed on the lower light absorption layer 1400 .

The substrate 1100 may use at least one of glass, metal, PET, PEN, PES, PI, and silicon. Of course, it is possible for the substrate 1100 to use a multilayer substrate instead of a single layer.

Various materials having electrical conductivity may be used for the first electrode 1200 . Of course, it is also possible to use a material having the same property of transmitting light. In addition, it may be manufactured in one layer or multiple layers, and various conductive materials may be mixed and manufactured.

Examples of the first electrode 1200 include Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO). Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and may be composed of at least one of Au. The first electrode 1200 may have a light-transmitting electrode layer and a metallic electrode layer having a mesh pattern formed thereunder.

Although not shown, the first silicon layer 1300 includes a first passivation layer and a first high concentration silicon layer. It is effective to use amorphous silicon as the passivation layer, and it is effective to use an amorphous silicon layer doped with a high concentration of P-type as the first high-concentration silicon layer. Of course, the present invention is not limited thereto, and it is possible to use an amorphous silicon layer heavily doped with an N-type. Here, it is effective that the second silicon layer 1500 is doped in a type opposite to that of the first silicon layer 1300 . That is, when the first silicon layer 1300 is doped with the P-type, the second silicon layer 1500 is doped with the N-type, and when the first silicon layer 1300 is doped with the N-type, the second silicon layer (1500) may be doped with P-type. Here, it is possible to cut the energy bandgap through doping, thereby minimizing light absorption loss.

The lower light absorption layer 1400 may be a semiconductor layer formed by using a crystalline silicon layer or doping a group III semiconductor. Through this, it is effective to absorb light of a wavelength of 800 to 1200 nm to generate electron-hole pairs. Of course, it is also possible to dope the lower light absorption layer 1400 with an n-type or p-type dopant. In addition, it is also possible that the lower light absorption layer 1400 is formed of a plurality of layers instead of a single layer. In this embodiment, as shown in the drawing, it is effective that texturing patterning is formed on the lower light absorption layer 1400 . Light efficiency can be improved through texturing patterning to increase electrical efficiency.

The second silicon layer 1500 includes a second passivation layer and a second high concentration silicon layer. It is effective to use amorphous silicon as the passivation layer, and it is effective to use an amorphous silicon layer highly doped with N-type as the second high-concentration silicon layer. It is preferable that the texturing patterning is also formed on the second silicon layer 1500 formed on the lower light absorption layer. This is due to the lower light absorption layer 1400, and the adhesion may be improved due to an enlarged contact area.

In the present embodiment, it is possible to form a tandem solar module structure having a two-terminal structure through the bonding layer 3000 . The bonding layer 3000 physically couples the first and second battery parts 1000 and 2000, and the long-wavelength light passing through the second battery part 2000 of the upper perovskite structure is transmitted without loss of transmission. 1 It is effective to make it incident on the battery unit 1000 . To this end, the bonding layer 3000 may use a transparent conductive material, a carbonaceous conductive material, or a metallic material, and may be formed by doping an N-type or P-type material. Of course, an N-type semiconductor material may be used as the junction layer, or a P-type semiconductor material may be used. In this embodiment, CdS, ZnS, or InS material may be used.

A second battery unit 2000 is formed on the bonding layer 3000 .

The second battery unit 2000 includes a first charge transfer layer 2100 formed on the bonding layer 3000 , an upper light absorption layer 2200 located on the first charge transfer layer 2100 , and the upper light absorption layer It includes a second charge transport layer 2300 positioned on the 2200 and a second electrode 2400 positioned on the second charge transport layer 2300 .

The first charge transport layer 2100 may be composed of at least one layer, and may be provided with any one of a material having an electron transport, hole transport, electron blocking, and hole blocking function. It is effective to use carrier function materials having opposite functions for the first charge transfer layer 2100 and the second charge transfer layer 2300 . A hole transport layer that transports holes to the first charge transport layer 2100 may be used. Here, the hole transport layer may include a conductive polymer.

It is effective to use silicon or a silicon alloy composition as the hole transport layer, it is effective to have P-type silicon properties through doping, and it is possible to control the band gap and the work function through doping concentration control.

The upper light absorption layer 2200 may absorb light having a wavelength of 300 to 800 nm to generate electron hole pairs. It is effective that the upper light absorption layer 2200 has a perovskite structure. In the upper light absorption layer 2200, when sunlight is absorbed, electrons maintaining a stable state in the upper light absorption layer 2200 are excited, and each of the excited electrons and the holes formed by the excited electrons move to the adjacent charge transport layer. At this time, electrons move to the charge transport layer having a function of transporting electrons, and holes move to the charge transport layer having a function of transporting holes.

It is effective to use a material having the chemical composition of AMX ₃ for the upper light absorption layer 2200 . Here, A may be any one of a metallic element or an organic compound of MA, FA, Cs, and Rb. M is any one of metal cations, and X may be formed by combining any one or more of oxides or halogen atoms of CL (Chlorine), Br (Bromine), and I (Iodine). A atom is located at each vertex of the cubic unit cell, M atom is located at the body-center position, that is, the center, and the X atom is located at the face-center position, that is, the center of each face.

It is effective that the upper light absorption layer 2200 has a light dispersion pattern capable of improving the efficiency of the solar cell by dispersing light of a short wavelength. It is effective that the upper light absorption layer 2200 includes a light absorption surface portion and a plurality of light dispersion patterns protruding from the light absorption surface portion.

It is effective that the light absorption surface is formed on the first charge transfer layer 2100 in a flat plate shape. It is effective that the light dispersing pattern is in the form of a protrusion in the form of a square pillar and uniformly protruding from the light absorption surface. It is effective that the light absorption surface part and the light dispersion pattern are made of the same material. When the total thickness of the upper light absorption layer is 100, the light dispersion pattern is effective to have a thickness of 10 to 70. In the present embodiment, since the light dispersion pattern protrudes, sunlight traveling straight from the upper portion is partially refracted or penetrated by the light dispersion pattern to disperse the light. When the thickness of the light dispersion pattern, that is, the height is less than 10, the efficiency due to the light dispersion is insufficient. That is, the efficiency improvement is 0.5% or less. When the height of the light dispersion pattern is greater than 70, the formation of the subsequent second charge transfer layer 2300 is not smooth due to the aspect ratio difference according to the step difference, so that problems such as the formation of internal voids occur. Therefore, it is effective that the height of the light dispersion pattern is smaller than 70% of the entire upper light absorption layer 2200 .

In the above description, the light absorption surface portion and the light dispersion pattern were made of the same material, but the present embodiment is not limited thereto, and it is more effective to use different materials as shown in the drawings. It is effective to form the light absorption surface with a low bandgap FA-based material, and to form a light dispersion pattern with a high-bandgap MA-based material on the upper portion. Through this, light efficiency due to different band gaps may be increased.

When the total area of the light absorption surface is 100, it is effective that the area occupied or covered by the protruding total light dispersion pattern is 30 to 70. As mentioned above, when it is less than 30, effective efficiency does not occur, and when it is greater than 70, there is a disadvantage in that the subsequently formed/deposited layer is not effectively formed as described above.

The second charge transport layer 2300 may be composed of at least one layer, and may be provided with any one of a material having an electron transport, hole transport, electron blocking, and hole blocking function. As mentioned above, it is effective to fabricate the second charge transport layer 2300 as a material film having a function opposite to that of the first charge transport layer 2100 .

An electron transport layer that transports electrons to the second charge transport layer 2300 may be used. The electron transport layer is TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotube, C ₆ 0 (fullerene), PCBM([6,6]-Phenyl-C61-butyric Acid It is effective to use at least one of Methyl Ester). Of course, it is also possible to fabricate a layer containing n-type silicon. That is, it is effective to have N-type silicon characteristics through doping, and it is possible to control the band gap and the work function through doping concentration control.

Various materials having electrical conductivity may be used for the second electrode 2400 . Of course, it is also possible to use a material having the same property of transmitting light. In addition, it may be manufactured in one layer or multiple layers, and various conductive materials may be mixed and manufactured. Examples of the second electrode 2400 include Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO). Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and may be composed of at least one of Au.

The present embodiment is not limited to the above-described structure, and as shown in the drawings, a texturing pattern may be formed on the first silicon layer 2100 , and a lower light absorption layer 1400 may be formed on the first silicon layer 2100 .

Further, the present invention is not limited to the above description, and other embodiments are possible.

Hereinafter, a high-efficiency solar cell according to another embodiment will be described with reference to the drawings. Among the descriptions to be described below, descriptions that overlap with those of the above-described embodiments will be omitted. In addition, the techniques of the description to be described later can be applied to the above-described embodiments.

10 is a cross-sectional conceptual view of a high-efficiency solar module according to another embodiment of the present invention. 11 is a cross-sectional conceptual view of a high-efficiency solar module according to a modified example of another embodiment.

10 and 11, a high-efficiency solar module according to another embodiment of the present invention includes a substrate 4100, a first electrode 4200 formed on the substrate 4100, and a first electrode ( The first charge transfer layer 4300 and the first silicon layer 4400 alternately formed on the 4200), and the upper light absorption layer 4500 and the second charge transfer sequentially formed on the first charge transfer layer 4300 The layer 4700, the lower light absorption layer 4600 and the second silicon layer 4800 sequentially formed on the first silicon layer 4400, the second charge transfer layer 4700 and the second silicon layer 4800 ) and a second electrode 4900 formed on it.

It is effective that the substrate 4100 of this embodiment is manufactured in the shape of a square plate. Of course, it is also possible to be manufactured in a circular plate shape or a polygonal plate shape. It is effective to use at least one of glass, metal, PET, PEN, PES, PI, and silicon as the substrate.

A first electrode 4200 is formed on the substrate 4100 . Examples of the first electrode 4200 include indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium tungaten oxide (IWO), zinc indium tin oxide (ZITO), indium zinc oxide (IZO), and aluminum zinc oxide (AZO). Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and may be composed of at least one of Au.

It is effective that the first charge transfer layer 4300 and the first silicon layer 4400 are alternately formed on the first electrode 4200 . It is effective that these two layers are formed in the form of a mesh pattern. Of course, the present invention is not limited thereto, and the first charge transfer layer 4300 and the first silicon layer 4400 may be formed in a straight line on the first electrode 4200 . In addition, it is preferable that the upper light absorption layer 4500 and the lower light absorption layer 4600 formed thereon are alternately formed, and the second charge transfer layer 4700 and the second silicon layer 4800 are also alternately formed. .

Here, when the total area of the lower first electrode 4100 is 100, the area of the upper light absorption layer 4500 and the lower light absorption layer 4600 is 50 to 70% of the upper light absorption layer 4500, and the lower light absorption layer It is effective that it is 30 to 50%. This is because the wavelength efficiency by the upper light absorption layer 4500 is higher. Of course, the area of the upper light absorption layer 4500 and the lower light absorption layer 4600 may be equal to 50:50.

The first charge transfer layer 4300 , the upper light absorption layer 4500 , and the second charge transfer layer 4700 constitute the first wavelength light absorption part, and the first silicon layer 4400 , the lower light absorption layer 4600 and the second charge transfer layer 4700 . 2 The silicon layer 4800 constitutes the second wavelength light absorbing part. In addition, since the first wavelength light absorbing part and the second wavelength light absorbing part are alternately formed between the electrode parts, it is possible to absorb light of a wide wavelength, thereby increasing the efficiency of the solar module. That is, a wavelength of 800 μm or less is absorbed by the upper light absorption layer 4500 , and a wavelength of 800 μm or more is absorbed by the lower light absorption layer 4600 , so that light in a wide wavelength band can be absorbed. In addition, since they are alternately fabricated, the absorption rate of light may increase due to diffusion, reflection, and dispersion of light at the interface.

In addition, since the first wavelength light absorption unit and the second wavelength light absorption unit can be manufactured in the horizontal direction as in the present embodiment, it is possible to reduce the thickness of the entire solar module to make it slim. Through this, it is possible to attach the module to the curved surface or the stepped surface, so that the utility of the solar tube module, that is, the device can be improved.

The solar module of this embodiment is not limited to the above description, and various modifications are possible. As shown in the figure, the high-efficiency solar module according to this modified example includes a substrate 5100 , a first electrode 5200 formed on the substrate, and a first carrier layer 5300 formed on the first electrode 5200 . and an upper light absorbing layer 5400 and a lower light absorbing layer 5500 alternately formed on the first carrier layer 5300 , and a second carrier layer formed on the upper light absorbing layer 5400 and the lower light absorbing layer 5500 . 5600 , and a second electrode 5700 formed on the second carrier layer 5600 .

In this modified example, the light absorption layer is alternately formed, and the upper and lower carrier layers are placed as a single layer to simplify the manufacturing process of the solar module.

It is effective to use a light-transmitting material having electrical conductivity for the first and second electrodes 5200 and 5700 . Preferably, as the first and second electrodes 5200 and 5700, ITO (Indium Tin Oxide), FTO (Fluorine-doped tin oxide), IWO (Indium Tungaten Oxide), ZITO (Zinc Indium Tin Oxide), IZO (Indium Zinc) Oxide), AZO (Aluminum Zinc Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), and IZTO (indium zinc-tin oxide) are effective.

The first carrier layer 5300 may be a hole transport layer that transports holes. Here, the hole transport layer may include a conductive polymer. The conductive polymer material is, for example, polyaniline, polypyrrole, polythiophene, poly-3,4-ethylenedioxythiophene-polystyrenesulfonate (PEDOT-PSS), poly-[bis(4-phenyl)(2,4, At least one of 6-trimethylphenyl)amine] (PTAA), Spiro-MeOTAD, or polyaniline-camphorsulfonic acid (PANI-CSA) may be used, but is not limited thereto.

In addition, it is effective to use silicon or a silicon alloy composition as the hole transport layer, it is effective to have P-type silicon properties through doping, and it is possible to control the band gap and the work function through doping concentration control.

The second carrier layer 5600 may be an electron transport layer that transports electrons. The electron transport layer is TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotube, C ₆ 0 (fullerene), PCBM([6,6]-Phenyl-C61-butyric Acid It is effective to use at least one of Methyl Ester). Of course, it is also possible to fabricate a layer containing n-type silicon. Of course, it is possible to include at least one of amorphous silicon or amorphous silicon oxide, amorphous silicon nitride, amorphous silicon carbide and nitride oxide, and amorphous silicon germanium.

Hereinafter, a method of manufacturing a high-efficiency solar module according to another embodiment of the present invention will be described with reference to the drawings.

12 to 17 are cross-sectional views for explaining a method of manufacturing a high-efficiency solar module according to another embodiment of the present invention.

12 , a first electrode 4200 and a first charge transfer layer 4300 are sequentially formed on a substrate 4100 .

Then, as shown in FIG. 13 , the first charge transport layer 4300 is patterned to expose a partial region of the lower first electrode 4200 . To this end, a photoresist film is formed on the first charge transfer layer 4300 , then exposure using a mask is performed, the exposed region is removed, and the first charge transfer layer 4300 in the removed region is removed and patterned. to form Of course, it is also possible to pattern by removing the photoresist film in the unexposed area. Through this, the first charge transport layer 4300 is manufactured to be spaced apart as shown in the drawing.

14 , the region between the first charge transfer layers 4300 is filled with the first silicon layer 4400 . To this end, it is effective to apply the first silicon layer 4400 over the entire area and then remove the first silicon layer 4400 on the first charge transport layer 4300 through a planarization process to form it.

As shown in FIG. 15 , the upper light absorption layer 4500 is formed only on the first charge transport layer 4300 . In this case, it is effective to pattern the upper light absorption layer 4500 through the aforementioned photolithography process. In this case, it is possible to use the same mask as the mask for patterning the first charge transport layer 4300 .

As shown in FIG. 16 , a lower light absorption layer 4600 is formed in the patterned interspace of the upper light absorption layer 4500 . Also, it is effective to form the lower light absorption layer 4600 over the entire area and then to form it through a planarization process.

As shown in FIG. 17 , a second charge transfer layer 4700 is formed on the upper light absorption layer 4500 , and a second silicon layer 4800 is formed on the lower light absorption layer 4600 . Then, by forming the second electrode 4900 on the second charge transfer layer 4700 and the second silicon layer 4800, a high-efficiency solar module according to the present embodiment is manufactured.

Such a high-efficiency solar module according to the present invention can reduce the overall thickness of the module, as well as increase the service life of the module. The lifetime of the module is due to the deterioration of the light absorption layer, and since the thickness of the module is reduced, heat dissipation can be facilitated, thereby preventing deterioration. In addition, it is possible to protect the light absorption layer from external impact and contamination, thereby increasing the lifetime of the entire module.

Although the technical idea of the present invention described above has been specifically described in the preferred embodiment, it should be noted that the above-described embodiment is for the description and not the limitation. In addition, a person of ordinary skill in the art of the present invention will understand that various embodiments are possible within the scope of the technical spirit of the present invention.

100, 1200, 4200, 5200: first electrode
120, 2100, 4300: first charge transport layer
130, 2200, 4500, 5400: upper light absorption layer
131: light absorption surface
132: light dispersion pattern
140, 2300, 4700: second charge transport layer
150, 2400, 4900, 5700: second electrode
1000: first battery unit
1100, 4100, 5100: substrate
1300, 4400: first silicon layer
1400, 4600, 5500: lower light absorption layer
1500, 4800: second silicon layer
2000: second battery unit
3000: bonding layer
5300: first carrier layer
5600: second carrier layer

Claims (14)

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a first electrode formed on the substrate;
a first charge transfer layer and a first silicon layer alternately formed on the first electrode;
an upper light absorption layer and a second charge transport layer sequentially formed on the first charge transport layer;
a lower light absorption layer and a second silicon layer sequentially formed on the first silicon layer; and
A high-efficiency solar module comprising a second electrode formed on the second charge transfer layer and the second silicon layer. 11. The method of claim 10,
When the total area of the first electrode is 100, the area of the upper light absorption layer and the lower light absorption layer is 50 to 70% of the upper light absorption layer and 30 to 50% of the lower light absorption layer. . 11. The method of claim 10,
The first and second electrodes are Indium Tin Oxide (ITO), Fluorine-doped tin oxide (FTO), Indium Tungaten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Indium Zinc Oxide (IZO), Aluminum Zinc (AZO) Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IZTO (indium zinc-tin oxide), Metal NWs (Silver nanowires, Cupper nanowires, etc.), carbon, carbon nanotubes , graphene, Al, Ag, Cu, Mg, Mo, Ti, and a high-efficiency solar module, characterized in that consisting of at least any one of Au.
11. The method of claim 10,
The first charge transport layer includes a conductive polymer, or includes a silicon or a silicon alloy composition,
The second charge transport layer is made of a material film having a function opposite to that of the first charge transport layer, but TiO ₂ , SnO ₂ , ZnO, CdS, NiO, WO ₃ , TiSrO ₃ , graphene, carbon nanotubes, C ₆₀ (fullerene), PCBM ([6,6]-Phenyl-C61-butyric Acid Methyl Ester) High-efficiency solar module comprising at least one of.
11. The method of claim 10,
The upper light absorption layer uses a material having a chemical composition of AMX ₃ , wherein A is any one of metal elements or organic compounds of MA, FA, Cs, and Rb, M is any one of metal cations, and X is an oxide or Cl (Chlorine), Br (Bromine), and I (Iodine) high-efficiency solar module, characterized in that formed by combining any one or more of the halogen atoms.

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