KR20100051339A - Image sensor package - Google Patents
Image sensor package Download PDFInfo
- Publication number
- KR20100051339A KR20100051339A KR1020080110457A KR20080110457A KR20100051339A KR 20100051339 A KR20100051339 A KR 20100051339A KR 1020080110457 A KR1020080110457 A KR 1020080110457A KR 20080110457 A KR20080110457 A KR 20080110457A KR 20100051339 A KR20100051339 A KR 20100051339A
- Authority
- KR
- South Korea
- Prior art keywords
- image sensor
- semiconductor chip
- transparent substrate
- sensor package
- bonding pad
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
The present invention relates to an image sensor package, and more particularly, to an image sensor package having a reduced overall size when forming a CMOS type image sensor package.
The image sensor can be largely classified into a charge coupled device image sensor (CCD) and a COMS image sensor (CMOS).
The CCD image sensor transfers the charge generated at the light receiving unit to the output terminal by the gate voltage and converts the electric signal at the final stage. On the other hand, the COMS image sensor converts an electric signal (voltage) into each pixel part and delivers it to the final stage.
In addition, the COMS image sensor can be driven at a voltage of 3.3V to 1.8V because it uses the conventional CMOS process, and can be driven at a lower voltage than the CCD, and it can integrate circuits other than the sensor function in the same sensor chip. The advantage is that high integration is possible.
The package structure of such an image sensor generally takes a form in which an image sensor chip is mounted inside a package formed of a substrate or an encapsulant. The encapsulant is one of the housing components of the image sensor package. In addition, a top plate or a window for allowing light to be incident is required. The top plate or the upper portion of the window may include a lens aligned with the light receiving portion, and a lens holder formed on a housing, in particular, an encapsulant to support the lens.
In particular, the top plate or window is formed on or attached to the encapsulant or substrate so as to be spaced a predetermined distance from the image sensor chip. As a result, a predetermined space is usually formed inside the package between the top plate or the window and the image sensor chip.
This space is used as a space for forming an accessory for connecting the image sensor chip and the housing of the image sensor package.However, a method of filling the internal cavity with a transparent epoxy resin to omit the space and the top plate or window is not proposed. However, it is difficult to improve the transparency of the epoxy, has a weak strength compared to the existing top plate or window, it is difficult to correct the surface unevenness after molding is not used a little.
Therefore, to date, most image sensor packages use top plates or windows made of transparent material such as glass, and the encapsulant is not supported by the encapsulant to maintain the gap between the top plate or window and the image sensor chip. It is manufactured as possible structure.
However, although not shown and described in detail, in the above-described prior art, a substrate having a top plate or a window disposed to be spaced apart on the image sensor chip and allowing external light to enter is an entire portion of the image sensor chip. Since it is arranged in such a way as to cover, unnecessary loss occurs in terms of the cost for forming the substrate having the top plate or window.
In addition, since the substrate including the top plate or the window covers the entire portion of the image sensor chip as described above, a connection member for forming an electrical connection between the substrate and the image sensor chip and a space for forming the same must be secured. Thus, the size and cost of the overall package is increased.
The present invention provides an image sensor package which prevents unnecessary cost loss in forming a COMS type image sensor package.
In addition, the present invention provides an image sensor package that prevents the increase in size and cost of the entire package by forming an external connection terminal when forming a CMOS image sensor package.
An image sensor package according to the present invention includes a semiconductor chip including an image sensor unit including a photodiode on an upper surface thereof and a bonding pad at an edge of the image sensor unit; A transparent substrate attached to the image sensor unit; And an external connection terminal attached to the bonding pad.
The image sensor unit further includes a micro lens.
The apparatus may further include an adhesive member interposed between the image sensor unit and the transparent substrate.
At least one or more of the adhesive members may be opened.
The transparent substrate is characterized in that made of a light transmitting material.
In addition, an image sensor package according to the present invention may include a semiconductor chip including an image sensor unit including a photodiode on an upper surface and a first bonding pad and a second bonding pad interconnected to the upper surface and a lower surface facing the upper surface; A transparent substrate attached to an upper portion of the semiconductor chip to cover the image sensor part; And an external connection terminal attached to the second bonding pad.
The semiconductor device may further include a through electrode disposed in the semiconductor chip and connecting the first bonding pad and the second bonding pad.
The image sensor unit further includes a micro lens.
Further comprising an adhesive member interposed between the semiconductor chip and the transparent substrate.
At least one or more of the adhesive members may be opened.
The transparent substrate is characterized in that made of a light transmitting material.
According to the present invention, when the CMOS image sensor package is formed, a transparent substrate is disposed on the semiconductor chip having the image sensor to cover only the image sensor, thereby forming an image sensor package, thereby forming an overall cost for forming the image sensor package. To avoid unnecessary costs.
In addition, according to the present invention, the external connection terminal is disposed directly on the semiconductor chip and electrically connected to the substrate, thereby reducing the size of the entire image sensor package.
Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
1 is a cross-sectional view illustrating an image sensor package according to an embodiment of the present invention. FIGS. 2 and 3 are plan views illustrating the image sensor package according to an embodiment of the present invention. As follows.
As illustrated in FIGS. 1 and 2, the
The
The
In addition, the
On the other hand, such an
The
4 is a cross-sectional view illustrating an image sensor package according to another embodiment of the present invention, and FIG. 5 is a plan view illustrating an image sensor package according to another embodiment of the present invention. Same as
As shown in FIGS. 4 and 5, the
The
In addition, the
The
In addition, the
The
As described above, the present invention is different from the conventional method in which a substrate having a window is disposed in such a manner as to cover an entire portion of the semiconductor chip. By being disposed to form an image sensor package, it is possible to prevent unnecessary cost loss in terms of the overall cost for forming the image sensor package.
In addition, since the external connection terminal is directly attached on the semiconductor chip and electrically connected to the substrate, the size of the entire image sensor package caused by the connecting member for electrically connecting the conventional substrate and the semiconductor chip and securing the space for forming the same. And the cost increase accordingly.
In the above-described embodiments of the present invention, the present invention has been described and described with reference to specific embodiments, but the present invention is not limited thereto, and the scope of the following claims is not limited to the scope of the present invention. It will be readily apparent to those skilled in the art that the present invention may be variously modified and modified.
1 is a cross-sectional view for explaining an image sensor package according to an embodiment of the present invention.
2 and 3 are plan views illustrating an image sensor package according to an exemplary embodiment of the present invention.
4 is a cross-sectional view illustrating an image sensor package according to another exemplary embodiment of the present invention.
5 is a plan view illustrating an image sensor package according to another exemplary embodiment of the present invention.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080110457A KR20100051339A (en) | 2008-11-07 | 2008-11-07 | Image sensor package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080110457A KR20100051339A (en) | 2008-11-07 | 2008-11-07 | Image sensor package |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20100051339A true KR20100051339A (en) | 2010-05-17 |
Family
ID=42277125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080110457A KR20100051339A (en) | 2008-11-07 | 2008-11-07 | Image sensor package |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20100051339A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023158040A1 (en) * | 2022-02-16 | 2023-08-24 | (주)에이지피 | Image sensor package using cover glass having groove formed therein, and method for manufacturing image sensor package |
-
2008
- 2008-11-07 KR KR1020080110457A patent/KR20100051339A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023158040A1 (en) * | 2022-02-16 | 2023-08-24 | (주)에이지피 | Image sensor package using cover glass having groove formed therein, and method for manufacturing image sensor package |
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