KR20100050471A - 프로그램 펄스 지속 시간의 지능적 제어 - Google Patents

프로그램 펄스 지속 시간의 지능적 제어 Download PDF

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Publication number
KR20100050471A
KR20100050471A KR1020107001506A KR20107001506A KR20100050471A KR 20100050471 A KR20100050471 A KR 20100050471A KR 1020107001506 A KR1020107001506 A KR 1020107001506A KR 20107001506 A KR20107001506 A KR 20107001506A KR 20100050471 A KR20100050471 A KR 20100050471A
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KR
South Korea
Prior art keywords
programming
pulses
applying
duration
volatile storage
Prior art date
Application number
KR1020107001506A
Other languages
English (en)
Korean (ko)
Inventor
준 완
유핀 퐁
Original Assignee
샌디스크 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/766,583 external-priority patent/US7630249B2/en
Priority claimed from US11/766,580 external-priority patent/US7580290B2/en
Application filed by 샌디스크 코포레이션 filed Critical 샌디스크 코포레이션
Publication of KR20100050471A publication Critical patent/KR20100050471A/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
KR1020107001506A 2007-06-21 2008-06-18 프로그램 펄스 지속 시간의 지능적 제어 KR20100050471A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/766,583 US7630249B2 (en) 2007-06-21 2007-06-21 Intelligent control of program pulse duration
US11/766,583 2007-06-21
US11/766,580 2007-06-21
US11/766,580 US7580290B2 (en) 2007-06-21 2007-06-21 Non-volatile storage system with intelligent control of program pulse duration

Publications (1)

Publication Number Publication Date
KR20100050471A true KR20100050471A (ko) 2010-05-13

Family

ID=40156678

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001506A KR20100050471A (ko) 2007-06-21 2008-06-18 프로그램 펄스 지속 시간의 지능적 제어

Country Status (6)

Country Link
EP (1) EP2160735A4 (zh)
JP (1) JP2010530596A (zh)
KR (1) KR20100050471A (zh)
CN (1) CN101779250B (zh)
TW (1) TWI378457B (zh)
WO (1) WO2008157606A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101635504B1 (ko) * 2009-06-19 2016-07-04 삼성전자주식회사 3차원 수직 채널 구조를 갖는 불 휘발성 메모리 장치의 프로그램 방법
US8432740B2 (en) * 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
JP2013041654A (ja) * 2011-08-19 2013-02-28 Toshiba Corp 不揮発性記憶装置
KR101989792B1 (ko) 2012-11-01 2019-06-17 삼성전자주식회사 불휘발성 메모리를 포함하는 메모리 시스템 및 불휘발성 메모리의 동작 방법
BR112016008080B1 (pt) * 2013-10-16 2021-02-23 Fujifilm Corporation sal de ácido carboxílico ou um sal de ácido mineral, cristal de succinato, cristal de fumarato e composição farmacêutica
JP2017168156A (ja) * 2016-03-14 2017-09-21 東芝メモリ株式会社 半導体記憶装置
TWI604449B (zh) * 2016-08-31 2017-11-01 旺宏電子股份有限公司 記憶體裝置與其程式化方法
US10283511B2 (en) * 2016-10-12 2019-05-07 Ememory Technology Inc. Non-volatile memory
CN110189783B (zh) * 2019-04-15 2021-04-06 华中科技大学 非易失性三维半导体存储器件的多值编程方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410747B2 (ja) * 1992-07-06 2003-05-26 株式会社東芝 不揮発性半導体記憶装置
JP3621501B2 (ja) * 1995-03-29 2005-02-16 株式会社東芝 不揮発性半導体記憶装置
JP3807744B2 (ja) * 1995-06-07 2006-08-09 マクロニクス インターナショナル カンパニイ リミテッド 可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
JPH1027491A (ja) * 1996-07-12 1998-01-27 Denso Corp 不揮発性メモリの書込用閾値測定方法
WO2003073433A1 (fr) * 2002-02-28 2003-09-04 Renesas Technology Corp. Memoire a semi-conducteurs non volatile
US6882567B1 (en) 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
KR100525910B1 (ko) * 2003-03-31 2005-11-02 주식회사 하이닉스반도체 플래시 메모리 셀의 프로그램 방법 및 이를 이용한 낸드플래시 메모리의 프로그램 방법
US6870772B1 (en) * 2003-09-12 2005-03-22 Renesas Technology Corp. Nonvolatile semiconductor memory device
US7023739B2 (en) * 2003-12-05 2006-04-04 Matrix Semiconductor, Inc. NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
KR100626377B1 (ko) * 2004-06-07 2006-09-20 삼성전자주식회사 동작 모드에 따라 프로그램 전압의 증가분을 가변할 수있는 불 휘발성 메모리 장치
KR100705220B1 (ko) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법

Also Published As

Publication number Publication date
TWI378457B (en) 2012-12-01
JP2010530596A (ja) 2010-09-09
CN101779250A (zh) 2010-07-14
TW200907976A (en) 2009-02-16
WO2008157606A1 (en) 2008-12-24
CN101779250B (zh) 2014-01-08
EP2160735A4 (en) 2011-04-20
EP2160735A1 (en) 2010-03-10

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