KR20100047132A - 이차 전지용 보호회로모듈 제조 방법 - Google Patents
이차 전지용 보호회로모듈 제조 방법 Download PDFInfo
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- KR20100047132A KR20100047132A KR1020090099556A KR20090099556A KR20100047132A KR 20100047132 A KR20100047132 A KR 20100047132A KR 1020090099556 A KR1020090099556 A KR 1020090099556A KR 20090099556 A KR20090099556 A KR 20090099556A KR 20100047132 A KR20100047132 A KR 20100047132A
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- die
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- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000011241 protective layer Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 48
- 230000007261 regionalization Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 8
- 229920002050 silicone resin Polymers 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 14
- 239000004593 Epoxy Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
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Abstract
Description
Claims (20)
- 각각 본체부와 외부단자로 정의되는 복수 개의 단위 패턴 형성 영역을 포함하는 FPCB(Flexible Printed Circuit Board)를 고정면에 고정하는 단계;상기 FPCB의 단위 패턴 형성 영역의 상기 본체부 상에 복수 개의 PCM(protection circuit module)을 형성하기 위한 다이(die) 형태의 칩(chip)들을 마운팅하는 단계;상기 FPCB 상에 형성된 PCM들의 구성 요소들 중 적어도 일부를 덮도록 상기 FPCB 상의 일정 영역에 보호층을 형성하는 단계; 및상기 FPCB 상에 다이 형태의 칩들 및 보호층을 형성한 후, 상기 FPCB를 상기 고정면으로부터 분리하되, 상기 PCM들이 상기 FPCB로부터 개별적으로 분리되도록 분리하는 단계;를 포함하는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 FBCB는 상기 고정면에 접착제 또는 양면 테이프로 고정되는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 다이 형태의 칩은 능동소자이며, 상기 능동 소자의 단자들은 상기 FPCB의 본체부와 상기 능동 소자를 연결하는 위치로부터 이격된 표면 상에 위치하여 상기 FPCB의 본체부에 와이어 본딩으로 연결되는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 3 항에 있어서,상기 다이 형태의 칩은 적어도 하나 이상의 상기 능동 소자와 본체부가 연결되는 위치의 상기 FPCB 상의 일정 위치에 코팅된 접착성 물질에 의해 상기 FPCB에 다이 본딩되는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 4 항에 있어서,상기 접착성 물질은 열전도성 수지 또는 열전도성 입자가 포함된 수지인 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 3 항에 있어서,상기 다이 형태의 칩이 상기 FPCB의 본체부에 외이어 본딩으로 연결되는 것 은상기 FPCB 상에 와이어 본딩 패드를 형성하는 단계; 및상기 능동 소자의 단자들을 상기 와이어 본딩 패드에 와이어 본딩으로 전기적으로 연결하는 단계;를 포함하는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 6 항에 있어서,상기 와이어의 상단은 상기 다이 형태의 칩의 상부 표면 보다 적어도 0.1mm 높은 위치에 구비되는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 6 항에 있어서,상기 FPCB는 동박 및 상기 동박 상에 구비된 금도금된 상기 와이어 본딩 패드를 구비하고 있는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 FPCB에 적어도 하나의 내부 단자를 연결하는 단계;를 포함하되,상기 적어도 하나의 내부 단자는 상기 FPCB의 본체부로부터 돌출되어 연장되 되, 전기 에너지를 제공하는 베어셀의 적어도 하나의 전극들과 연결되기 위해 연장되어 있는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 FPCB 상의 일정 영역에 보호층을 형성하는 단계는상기 능동 소자들을 포함하는 FPCB의 몸체부들 상에 보호층을 형성하는 단계인 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 10 항에 있어서,상기 FPCB 상의 일정 영역에 보호층을 형성하는 단계는상기 FPCB 상에 상기 보호층을 형성함에 있어 상기 보호층의 높이는 상기 다이 형태의 칩의 상부 표면보다 0.15mm 보다는 낮게 형성하는 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 10 항에 있어서,상기 FPCB의 몸체부들 상에 보호층을 형성하는 단계는상기 FPCB의 몸체부들 각각의 일정 영역 상에 각각의 보호층들을 형성하는 단계인 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 12 항에 있어서,상기 FPCB의 몸체부들 각각의 일정 영역 상에 각각의 보호층들을 형성하는 단계는상기 FPCB의 몸체부들의 능동 소자들 상에 보호층들을 형성하고, 상기 FPCB의 몸체부들의 수동 소자들 상에는 상기 보호층을 형성하지 않는 단계인 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 보호층은 절연성 수지를 포함하는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 제 14 항에 있어서,상기 FPCB의 일정 영역에 보호층을 형성하는 단계는상기 FPCB 상에 엑폭시 수지액 또는 실리콘 수지액을 떨어뜨린 후 상기 수지액 또는 실리콘 수지액을 경화시키는 단계인 것을 특징으로 하는 복 수개의 이차전 지용 PCM 형성 방법.
- 제 1 항에 있어서,상기 고정면에서 상기 FPCB를 분리하기 이전에 상기 FPCB 중 불필요한 부분은 제거하는 단계를 포함하는 것을 특징으로 하는 복 수개의 이차전지용 PCM 형성 방법.
- 본체부와 적어도 하나의 외부 단자를 구비한 적어도 하나의 FPCB(flexible printed circuit board)를 고정부재 상에 고정하는 단계;상기 적어도 하나의 FPCB의 본체부 상에 PCM(protection circuit module)을 형성하기 위한 다이(die) 형태의 칩(chip)으로 이루어진 적어도 하나의 회로 소자를 마운팅하는 단계;전기 에너지를 제공하는 베어셀의 적어도 하나의 전극과 연결되는 내부 단자들을 상기 적어도 하나의 FPCB에 연결하는 단계;상기 PCM을 위한 적어도 하나의 회로 소자를 덮도록 상기 적어도 하나의 FPCB의 일정 영역을 덮는 보호층을 형성하는 단계; 및상기 고정 부재로부터 상기 적어도 하나의 회로 소자 및 보호층을 구비한 적어도 하나의 FPCB를 분리하는 단계;를 포함하는 것을 특징으로 하는 이차전지용 PCM 형성 방법.
- 제 17 항에 있어서,상기 다이 형태의 칩으로 이루어진 적어도 하나의 회로 소자는 상기 FPCB의 본체부에 다이 본딩된 능동 소자를 포함하며, 상기 능동 소자의 단자들은 상기 능동 소자와 상기 FPCB의 본체부를 연결하는 위치로부터 이격된 표면 상에 위치하는 것을 특징으로 하는 이차전지용 PCM 형성 방법.
- 제 18 항에 있어서,상기 적어도 하나의 회로 소자는 상기 적어도 하나의 회로 소자와 본체부가 연결되는 위치의 상기 FPCB 상에 코팅된 접착성 물질에 의해 상기 FPCB에 다이 본딩되는 것을 특징으로 하는 이차전지용 PCM 형성 방법.
- 제 18 항에 있어서,상기 FPCB 상에 와이어 본드 패드들을 형성하는 단계; 및상기 와이어 본드 패드들과 상기 능동 소자들의 단자들을 와이어 본딩으로 전기적으로 연결하는 단계;를 포함하는 것을 특징으로 하는 이차전지용 PCM 형성 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10909408P | 2008-10-28 | 2008-10-28 | |
US61/109,094 | 2008-10-28 | ||
US12/510,143 US8966749B2 (en) | 2008-10-28 | 2009-07-27 | Manufacturing method for protection circuit module of secondary battery |
US12/510,143 | 2009-07-27 |
Publications (2)
Publication Number | Publication Date |
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KR20100047132A true KR20100047132A (ko) | 2010-05-07 |
KR101084855B1 KR101084855B1 (ko) | 2011-11-22 |
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Cited By (2)
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KR20180084462A (ko) * | 2017-01-17 | 2018-07-25 | 주식회사 엘지화학 | 커넥터와 보강부재가 장착되어 있는 전지셀용 fpcb |
KR20180094704A (ko) * | 2017-02-16 | 2018-08-24 | 주식회사 엘지화학 | 2종의 프레임 유닛들이 적용된 이차전지용 보호회로 모듈의 제조방법 |
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US9160806B1 (en) * | 2010-08-04 | 2015-10-13 | Open Invention Network, Llc | Method and apparatus of organizing and delivering data to intended recipients |
CN102544616B (zh) * | 2010-12-08 | 2014-07-30 | 比亚迪股份有限公司 | 一种电池模组 |
JP5399456B2 (ja) | 2011-09-30 | 2014-01-29 | イビデン株式会社 | 多ピース基板の製造方法及び多ピース基板 |
CN104157627B (zh) * | 2013-05-14 | 2019-11-08 | 飞兆半导体公司 | 半导体组件 |
JP2015076576A (ja) * | 2013-10-11 | 2015-04-20 | パナソニックIpマネジメント株式会社 | 電気装置、電気装置の製造方法 |
CN106612590A (zh) * | 2016-12-22 | 2017-05-03 | 惠州市蓝微电子有限公司 | 一种电池保护板封装工艺 |
US9990837B1 (en) * | 2017-03-01 | 2018-06-05 | Rosemount Inc. | Intrinsic safety isolation with capacitive coupling |
KR102306042B1 (ko) * | 2018-12-11 | 2021-09-27 | 주식회사 엘지에너지솔루션 | 배터리 모듈용 fpcb 조립체, 그 제조방법 및 그를 포함하는 배터리 모듈 |
DE102020102037A1 (de) * | 2020-01-28 | 2021-07-29 | Krohne Messtechnik Gmbh | Radaranordnung |
KR102729947B1 (ko) | 2021-09-10 | 2024-11-13 | 밀워키 일렉트릭 툴 코포레이션 | 배터리 팩 |
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JP3372263B2 (ja) | 1991-06-13 | 2003-01-27 | 北陸電気工業株式会社 | フレキシブル回路基板とその製造方法 |
US5937512A (en) * | 1996-01-11 | 1999-08-17 | Micron Communications, Inc. | Method of forming a circuit board |
FR2769109B1 (fr) * | 1997-09-26 | 1999-11-19 | Gemplus Sca | Dispositif electronique a puce jetable et procede de fabrication |
JP2001143672A (ja) | 1999-11-16 | 2001-05-25 | Toshiba Battery Co Ltd | 電池と保護回路基板の一体化構造物、およびそれに用いる保護回路基板 |
JP3557143B2 (ja) | 2000-01-19 | 2004-08-25 | 三洋電機株式会社 | スイッチング素子のベアチップの実装構造 |
JP2001268808A (ja) | 2000-03-17 | 2001-09-28 | Mitsumi Electric Co Ltd | 二次電池保護モジュール |
JP3855879B2 (ja) * | 2002-08-07 | 2006-12-13 | 松下電器産業株式会社 | フレキシブルプリント基板の搬送用キャリアおよびフレキシブルプリント基板への電子部品実装方法 |
KR100614388B1 (ko) * | 2005-03-09 | 2006-08-21 | 삼성에스디아이 주식회사 | 이차 전지의 보호회로 기판과 이를 이용한 이차 전지 및 그형성 방법 |
JP2007049098A (ja) | 2005-08-12 | 2007-02-22 | Mitsumi Electric Co Ltd | 回路モジュール、電池パック、及び回路モジュールの製造方法 |
KR100943594B1 (ko) * | 2006-03-27 | 2010-02-24 | 삼성에스디아이 주식회사 | 보호 회로 모듈 및 이를 이용한 전지 팩 |
-
2009
- 2009-07-27 US US12/510,143 patent/US8966749B2/en not_active Expired - Fee Related
- 2009-10-20 KR KR1020090099556A patent/KR101084855B1/ko not_active IP Right Cessation
- 2009-10-28 CN CN2009102091697A patent/CN101728584B/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20180084462A (ko) * | 2017-01-17 | 2018-07-25 | 주식회사 엘지화학 | 커넥터와 보강부재가 장착되어 있는 전지셀용 fpcb |
KR20180094704A (ko) * | 2017-02-16 | 2018-08-24 | 주식회사 엘지화학 | 2종의 프레임 유닛들이 적용된 이차전지용 보호회로 모듈의 제조방법 |
Also Published As
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US20100101081A1 (en) | 2010-04-29 |
KR101084855B1 (ko) | 2011-11-22 |
CN101728584B (zh) | 2012-06-27 |
US8966749B2 (en) | 2015-03-03 |
CN101728584A (zh) | 2010-06-09 |
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