KR20100010864A

KR20100010864A - Silicone contactor for testing semiconductor device

Info

Publication number: KR20100010864A
Application number: KR1020080071936A
Authority: KR
Inventors: 문해중
Original assignee: 문해중
Priority date: 2008-07-23
Filing date: 2008-07-23
Publication date: 2010-02-02

Abstract

PURPOSE: A silicon contactor for testing semiconductor device is provided to lower the pressure required for the electrical contact of the conductive core. CONSTITUTION: A main body(20) is formed into the insulating property silicon material in the form of board-shape. The upper side of the main body of the location which the contact guide projection(25) is corresponded to the terminal of the semiconductor device or lower-part. The conductive core(26) electrically connects the terminal and inspection PCB(Printed Circuit Board) interval of the semiconductor device, it is composed of conductive the mixture in which the silicon material and conductive material. The contact guide projection toward the top and bottom is penetrated and exposes to outside. The conductive cores are mutually detached in the contact guide projection.

Description

Silicon contactor for testing semiconductor devices

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon contactor for semiconductor device testing, and more particularly, to a silicon contactor for semiconductor device testing, which is structured to suppress a decrease in contact efficiency of a conductive core due to repeated use.

After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor. In the positive inspection of a semiconductor device, a silicon contactor formed to be in electrical contact with a terminal of a semiconductor device is inspected while being inserted between test circuit boards.

The silicon contactor for semiconductor devices has a structure in which conductive cores formed of a conductive material are vertically communicated with each other on a main body made of an insulating silicon material. The conductive core formed on the main body is formed to protrude more convexly than the main body in order to maintain smooth contact with the terminals of the semiconductor element.

However, in the conventional silicon contactor, when the conductive core formed on the main body of the insulating material becomes the same height as the main body due to wear due to repeated use, or retracts inward from the main body, the number of terminals of the semiconductor element to be inspected is large and the surface of the element on which the terminal is formed In the case where the step difference between the terminal and the terminal is minute or the same, the contact between the terminal and the conductive core becomes difficult even when pressurized, so that a contact error occurs between the terminals.

In addition, such a silicon contactor has a disadvantage in that the pressing force to be applied per terminal in the vertical direction is increased in order to achieve a smooth electrical contact of the conductive core.

SUMMARY OF THE INVENTION An object of the present invention is to provide a silicon contactor for testing a semiconductor device structured to suppress a decrease in contact efficiency of a conductive core due to repeated use in order to improve the above problems.

It is still another object of the present invention to provide a silicon contactor for testing a semiconductor device capable of lowering a pressing force required for electrical contact of a conductive core.

In order to achieve the above object, a silicon contactor for testing a semiconductor device according to the present invention is provided between a terminal of a semiconductor device and an inspection circuit board for testing the goodness of the semiconductor device and between the semiconductor device terminal and the inspection circuit board. A silicon contactor for testing a semiconductor device for relaying electrical connections, comprising: a main body formed in an insulating silicon material in a plate shape; A contact guide protrusion formed of an insulating silicon material to protrude outward from at least one of an upper surface and a lower surface of the main body on a position corresponding to the terminal of the semiconductor element; And a conductive core inserted into the contact guide protrusion to be exposed to the outside through a conductive mixture in which a silicon material and a conductive material are mixed to electrically connect the terminal of the semiconductor element and the test circuit board. .

Preferably, the conductive core is formed to be spaced apart from each other in the contact guide projection.

In addition, the outer diameter of the contact guide protrusion is formed of 300 to 500 micrometers.

Three conductive cores are formed in the contact guide protrusion, and the outer diameter of the conductive core is preferably applied to 150 to 200 micrometers.

According to the silicon contactor for semiconductor device test according to the present invention, it is possible to suppress the deterioration of the contact efficiency of the conductive core due to repeated use, and to provide an advantage of reducing the pressing force required for electrical contact of the conductive core.

Hereinafter, a silicon contactor for testing a semiconductor device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view illustrating a silicon contactor according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the silicon contactor of FIG. 1.

1 and 2, the silicon contactor 10 according to the present invention includes a support plate 12, a main body 20, a contact guide protrusion 25, and a conductive core 26.

The support plate 12 supports the main body 20 so that the main body 20 can flow in the vertical direction.

The support plate 12 has a main through hole for a retreat guide formed at the center thereof, and a coupling through hole 14 is spaced apart from each other at a position spaced apart from an edge along an edge forming the main through hole.

The main body 20 includes a peripheral support part 22 and a peripheral support part 22 which are filled with an insulating insulating silicone material having elasticity in the coupling through-hole 14 and joined to the upper and lower surfaces of the support plate 12. It has a structure having a main body 24 in the form of a rectangular parallelepiped extending in a smaller size than the main through hole.

Unlike the illustrated example, the support plate 12 is omitted, and the main body may be formed independently of the main body 24 without the peripheral support 22 for coupling with the support plate 12.

The thickness of the main body 24 is about 0.8 to 0.9mm is applied.

The upper and lower surfaces of the main body 24 are integrally formed with contact guide protrusions 25 formed to extend upwardly and downwardly.

The contact guide protrusion 25 is formed to correspond to the number of terminals 42 of the inspection target semiconductor element 40.

The contact guide protrusion 25 guides contact with the terminal 42 of the conductive core 26 to be described later, and keeps the height of the conductive core 26 the same as the height of the contact guide protrusion 25 by repeated use. Even if it is retracted or slightly retracted inwards, the elastic expansion and contraction maintains the contact retention efficiency with the terminal 42.

The outer diameter of the contact guide protrusion 25 is formed to less than 500 micrometers.

More preferably, the contact guide protrusion 25 has an outer diameter of 300 to 500 micrometers.

The contact guide protrusion 25 also expands the outer shape along with the conductive core 26 by pressing when pressed, thereby providing an effect of increasing the contact efficiency by expanding the contact area of the conductive core 26.

The height of the contact guide protrusion 25 is preferably applied to 0.1 to 0.2mm.

In the illustrated example, a structure in which the contact guide protrusion 25 protrudes in the vertical direction from the top and bottom surfaces of the main body 24 is applied. Unlike the illustrated example, the contact guide protrusion 25 is the main body 24. Of course, it may be formed to protrude upward only on the upper surface of the main body 24 or protrude downward only on the bottom surface of the main body 24.

The body 20 and the contact guide protrusion 25 are integrally formed of an insulating silicone material.

In the contact guide protrusion 25, a conductive core 26 filled with a conductive material is formed to extend in the vertical direction and be exposed to the outside.

The conductive core 26 is formed of a conductive mixture in which a silicon material and a conductive material are mixed.

The conductive core 26 may be a conductive material, such as nickel powder, silver powder, gold powder, or the like, in a state in which the conductive material is mixed with a silicon material to provide conductivity after the curing process. As an example, the conductive mixture is obtained by mixing gold powder or silver powder with liquid silicon.

Preferably, the conductive core 26 is formed to protrude more than the contact guide protrusion 25.

The silicon contactor 10 is provided between the terminal 42 of the semiconductor device 40 and the test circuit board 50 for testing the positive and negative powers of the semiconductor device 40 and the terminal 42 of the semiconductor device 40. The conductive cores 26 at corresponding positions are electrically connected between the test terminals 52 of the test circuit board 50 so that the test of the semiconductor device 40 can be performed.

In particular, the silicon contactor 10 is formed so that the contact guide protrusion 25 protrudes from the main body 24, so that only the conductive core 26 or the contact core 26 and the contact guide 26 when pressurized during the positive test process Only the projections 25 can be kept in contact with the terminals 42 and 52, and the upper and lower surfaces of the main body 24 can be brought into non-contact so that the terminals 42 and 52 of the conductive core 26 can be made even by a small pressing force. Contact efficiency can be maintained and the contact efficiency with the terminals 42 and 52 of the conductive core 26 can be maintained even if the conductive core 26 is worn to the same height as the contact guide protrusion 25 in repeated use. have.

Meanwhile, unlike the illustrated example, the conductive cores 26 formed in the contact guide protrusion 25 have three conductive cores 26a and 26b in one contact guide protrusion 25 as shown in FIGS. 3 and 4. The structure in which the 26c is formed may be applied.

In this case, the outer diameter of each of the conductive cores 26a, 26b, and 26c is preferably applied to 150 to 200 micrometers.

Of course, the number of conductive cores 26 formed in the contact guide protrusion 25 may be two or four or more.

A preferable manufacturing process of the silicon contactor 10 having such a structure will be described.

First, the main guide hole for the retraction guide is formed in the center, and the support plate 12 having the coupling through hole 14 is formed at a position spaced apart from the main through hole.

Next, the support plate 12 is embedded in a molding machine (not shown), and the insulating support material 22 is filled up and down in the coupling through-hole 14 to be joined to the upper and lower surfaces of the support plate 12. In the insulating silicone material so as to have a main body 24 and a contact guide protrusion 25 protruding upward from the main body 24 in a smaller size than the main through-hole 13 from the peripheral support 22 Mold.

Thereafter, a through hole penetrating the inside of the contact guide protrusion 25 up and down is formed using a laser hole processing machine.

In this case, the laser hole processing machine may apply a laser hole processing machine that is applied to form a fine line width in a semiconductor manufacturing process. The laser hole processing machine can reduce the line width of the beam up to 1 pm (pico meter) or less and is disclosed in Korean Patent Application Publication No. 2002-0022136.

Next, a conductive mixture containing a silicon material and a conductive material is filled in the through hole.

Filling the conductive mixture into the through-holes formed in the contact guide protrusion 25 is a method of filling by pressing the conductive mixture to be filled into the contact guide protrusion 25, and the electric field is formed in the vertical direction of the main through hole (13) It is possible to apply a variety of methods such as filling the conductive mixture is moved into the through hole by the electric field applied up and down.

Thereafter, the conductive mixture may be cured to harden the conductive core.

Meanwhile, unlike the method described above, after the base material formed in the form of a rectangular parallelepiped in silicon is formed to have a through hole in the contact guide protrusion 25 and the contact guide protrusion 25 by etching, the conductive mixture described above is formed in the through hole. Through the filling and curing process, a silicon contactor having a conductive core may be formed.

In addition, the main plate 24 and the contact guide protrusion 25 of the structure in which the support plate 12 and the peripheral support 22 are omitted are formed by molding or etching, and then filled with the conductive mixture described above. It may be formed in a structure having a conductive core.

1 is a perspective view showing a silicon contactor according to an embodiment of the present invention,

2 is a cross-sectional view of the silicon contactor of FIG. 1,

3 is a perspective view illustrating a silicon contactor according to still another embodiment of the present invention;

4 is a cross-sectional view of the silicon contactor of FIG. 3.

Claims

A silicon contactor for testing a semiconductor device, which is provided between a terminal of a semiconductor device and an inspection circuit board for testing the failure of the semiconductor device and relays an electrical connection between the semiconductor device terminal and the inspection circuit board.

A main body formed of an insulating silicone material in a plate shape;

A contact guide protrusion formed of an insulating silicon material to protrude outward from at least one of an upper surface and a lower surface of the main body on a position corresponding to the terminal of the semiconductor element;

A conductive mixture in which a silicon material and a conductive material are mixed to be electrically connected between the terminal of the semiconductor element and the test circuit board so as to penetrate up and down in the contact guide protrusion to be exposed to the outside; A silicon contactor for testing semiconductor devices, characterized in that.

The silicon contactor of claim 1, wherein a plurality of conductive cores are formed to be spaced apart from each other in the contact guide protrusion.

The silicon contactor of claim 2, wherein an outer diameter of the contact guide protrusion is 300 to 500 micrometers.

The silicon contactor of claim 3, wherein three conductive cores are formed in the contact guide protrusion, and an outer diameter of the conductive core is 150 to 200 micrometers.