KR20090114132A - Semiconductor Manufacturing Apparatus - Google Patents

Semiconductor Manufacturing Apparatus Download PDF

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Publication number
KR20090114132A
KR20090114132A KR1020080039921A KR20080039921A KR20090114132A KR 20090114132 A KR20090114132 A KR 20090114132A KR 1020080039921 A KR1020080039921 A KR 1020080039921A KR 20080039921 A KR20080039921 A KR 20080039921A KR 20090114132 A KR20090114132 A KR 20090114132A
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Prior art keywords
wafer carrier
side cover
heater
manufacturing apparatus
semiconductor manufacturing
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KR1020080039921A
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Korean (ko)
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김종학
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엘지이노텍 주식회사
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Priority to KR1020080039921A priority Critical patent/KR20090114132A/en
Publication of KR20090114132A publication Critical patent/KR20090114132A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A semiconductor manufacturing apparatus is provided to prevent the side exposure of the heater thermal by blocking heat of the heater using a side cover. CONSTITUTION: The wafer carrier(130) includes the upper plate which includes the pocket within the chamber(110) and the side cover extended to the upper plate. The heater(140) is arranged under the upper plate of the wafer carrier. The supporting part(160) is combined with the side cover for the rotation of the wafer carrier. The knob performs loading or unloading on the wafer carrier. The side cover of the wafer carrier is formed of cylindrical type. The rotating unit(170) of cylindrical type is combined with the supporting part.

Description

반도체 제조장치{Semiconductor Manufacturing Apparatus}Semiconductor Manufacturing Apparatus

실시 예는 반도체 제조장치에 관한 것이다.An embodiment relates to a semiconductor manufacturing apparatus.

반도체 소자는 증착 공정, 포토공정, 식각공정, 확산공정을 통하여 제조될 수 있으며, 이러한 공정들이 수 차례에서 수십 차례 반복되어야 적어도 하나의 반도체 장치가 탄생될 수 있다. 특히, 상기 증착 공정은 반도체 소자 제조의 재현성 및 신뢰성에 있어서 개선이 요구되는 필수적인 공정으로 졸겔(sol-gel)방법, 스퍼터링(sputtering)방법, 전기도금(electro-plating)방법, 증기(evaporation)방법, 화학기상증착(chemical vapor deposition)방법, 분자 빔 에피탁시(molecule beam eptaxy)방법, 원자층 증착방법 등에 의하여 반도체 기판 상에 상기 가공막을 형성하는 공정이다.The semiconductor device may be manufactured through a deposition process, a photo process, an etching process, and a diffusion process, and at least one semiconductor device may be produced when these processes are repeated several times to several tens of times. In particular, the deposition process is an essential process requiring improvement in the reproducibility and reliability of semiconductor device fabrication, such as a sol-gel method, a sputtering method, an electroplating method, and an evaporation method. , A process of forming the processed film on a semiconductor substrate by a chemical vapor deposition method, a molecular beam epitaxy method, an atomic layer deposition method, or the like.

그 중 화학기상증착방법은 다른 증착방법보다 반도체 기판 상에 형성되는 박막의 스텝커버리지(step coverage), 균일성(uniformity) 및 양산성 등 같은 증착 특성이 우수하기 때문에 가장 보편적으로 사용되고 있다. 이와 같은 화학기상증착방법에는 LPCVD(Low Pressure Chemical Vapor Deposition), APCVD(Atmospheric Pressure Chemical Vapor Deposition), LTCVD(Low Temperature Chemical Vapor Deposition), PECVD(Plasma Enhanced Chemical Vapor Deposition), MOCVD(Metal Organic Chemical Vapor Deposition) 등으로 나눌 수 있다. Among them, the chemical vapor deposition method is most commonly used because the deposition characteristics such as step coverage, uniformity, and mass productivity of the thin film formed on the semiconductor substrate are superior to other deposition methods. Such chemical vapor deposition methods include LPCVD (Low Pressure Chemical Vapor Deposition), APCVD (Atmospheric Pressure Chemical Vapor Deposition), LTCVD (Low Temperature Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), MOCVD (Metal Organic Chemical Vapor Deposition) ) And the like.

예컨대, 상기 MOCVD는 유기금속의 열분해반응을 이용해 반도체 기판상에 금속화합물을 형성하는 공정이다. 그리고, 최근에 반도체 장치가 고집적화되고 고성능화가 요구됨에 따라 새로운 물질이 도입이 필요해지고 있고, 상기 반도체 기판 상에 상기 MOCVD 공정이 수행된 이후에는 상기 화학기상증착설비 내부에 존재하는 잔류가스 및 반응생성물을 제거하는 세정 및 퍼지공정을 수행하고 있다. 따라서, 이러한 MOCVD 공정과 같은 화학기상증착 공정은 원료물질을 기체상태로 반응챔버에 유입시켜 반도체 기판 상에서 화학반응을 통하여 소정의 막질이 증착되도록 하는 공정이다.For example, the MOCVD is a process of forming a metal compound on a semiconductor substrate using a thermal decomposition reaction of an organic metal. In recent years, as semiconductor devices are highly integrated and high performance is required, new materials are required to be introduced. After the MOCVD process is performed on the semiconductor substrate, residual gases and reaction products present in the chemical vapor deposition facility are introduced. A cleaning and purging process is performed to remove this. Therefore, the chemical vapor deposition process such as the MOCVD process is a process for introducing a raw material into the reaction chamber in a gaseous state to deposit a predetermined film quality through a chemical reaction on the semiconductor substrate.

실시 예는 측면 커버를 포함하는 웨이퍼 캐리어를 제공하여, 측면으로 방출되는 히터 열을 커버하고, 이탈을 방지할 수 있도록 한 반도체 제조 장치를 제공한다.The embodiment provides a semiconductor carrier that includes a wafer carrier including a side cover to cover a heater row emitted to the side and prevent separation.

실시 예는 측면 커버에 포크용 노브를 형성함으로써, 웨이퍼 캐리어의 로딩 또는 언 로딩이 가능한 반도체 제조 장치를 제공한다.The embodiment provides a semiconductor manufacturing apparatus capable of loading or unloading a wafer carrier by forming a knob for a fork on the side cover.

실시 예는 원통형의 웨이퍼 캐리어 지지부를 이용하여 웨이퍼 캐리어를 회전시켜 줄 수 있도록 한 반도체 제조 장치를 제공한다.The embodiment provides a semiconductor manufacturing apparatus capable of rotating a wafer carrier using a cylindrical wafer carrier support.

실시 예에 따른 반도체 제조장치는, 챔버; 상기 챔버 내에서 포켓을 구비한 상판 및, 상기 상판 둘레를 따라 아래 방향으로 연장된 측면 커버를 포함하는 웨이퍼 캐리어; 상기 웨이퍼 캐리어의 상판 아래에 배치된 히터; 상기 웨이퍼 캐리어의 회전을 위해 상기 측면 커버에 결합된 원통형의 지지부를 포함한다. A semiconductor manufacturing apparatus according to an embodiment includes a chamber; A wafer carrier comprising a top plate with a pocket in the chamber, and a side cover extending downwardly around the top plate; A heater disposed under the top plate of the wafer carrier; And a cylindrical support coupled to the side cover for rotation of the wafer carrier.

실시 예는 웨이퍼 캐리어에 측변 커버를 형성하여 히터 열을 차단함으로써, 히터 열의 측면 노출을 차단할 수 있다.The embodiment may block side heater exposure by forming a side cover on the wafer carrier to block the heater heat.

실시 예는 웨이퍼 캐리어가 이탈되는 것을 방지할 수 있으며, 상기 웨이퍼 캐리어 아래의 히터를 보호할 수 있는 효과가 있다.The embodiment can prevent the wafer carrier from being detached and can protect the heater under the wafer carrier.

이하, 실시 예에 따른 반도체 제조장치에 대하여 첨부된 도면을 참조하여 설명하면 다음과 같다.Hereinafter, a semiconductor manufacturing apparatus according to an embodiment will be described with reference to the accompanying drawings.

도 1은 실시 예에 따른 반도체 제조장치의 측 단면도이고, 도 2는 도 1의 웨이퍼 캐리어가 결합되기 전의 상태를 나타낸 단면도이며, 도 3은 도 1의 웨이퍼 캐리어의 사시도이다.1 is a side cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment, FIG. 2 is a cross-sectional view showing a state before the wafer carrier of FIG. 1 is coupled, and FIG. 3 is a perspective view of the wafer carrier of FIG.

도 1 및 도 2를 참조하면, 반도체 제조장치(100)는 챔버(110)를 갖는 반응 용기(112), 상부판((113), 통로(118), 배출구(119), 웨이퍼 캐리어(130), 히터(140), 지지부(160), 회전부(170), 벨트(175) 및 모터(180)를 포함한다.1 and 2, the semiconductor manufacturing apparatus 100 includes a reaction vessel 112 having a chamber 110, a top plate 113, a passage 118, an outlet 119, and a wafer carrier 130. , The heater 140, the support part 160, the rotation part 170, the belt 175, and the motor 180.

이러한 반도체 제조장치(100)는 화학적 기상 증착공정에 사용되기에 적당한 어떠한 전구체 가스들을 이용하여 웨이퍼에 증착하게 된다. 즉, 상기 챔버(110)에 유입된 전구체 가스들은 혼합되어 웨이퍼에 증착물을 형성하며, 캐리어 가스들은 통상적으로 웨이퍼 캐리어에서 층류를 유지하기 위한 것이다. 이런 방법으로, 예를들어 GaAs, GaN, GaAlAs, InGaAsSb, InP, ZnSe, ZnTe, HgCdTe, InAsSbP, InGaN, AlGaN, SiGe, SiC, ZnO 및 InGaAlP 등과 같은 반도체 화합물의 에피텍셜 성장이 얻어지며, 이에 한정하지는 않는다.The semiconductor device 100 is deposited on a wafer using any precursor gases suitable for use in a chemical vapor deposition process. That is, the precursor gases introduced into the chamber 110 are mixed to form deposits on the wafer, and the carrier gases are typically for maintaining laminar flow in the wafer carrier. In this way, for example, epitaxial growth of semiconductor compounds such as GaAs, GaN, GaAlAs, InGaAsSb, InP, ZnSe, ZnTe, HgCdTe, InAsSbP, InGaN, AlGaN, SiGe, SiC, ZnO and InGaAlP is obtained, and is thus limited. I do not.

상기 반응 용기(112)는 실린더로서 기능하며, 내부에 챔버(110)가 구비된다. 상기 반응 용기(112)의 상부에는 상부판(113)이 배치되며, 상기 상부판(113)을 통해 각종 공급 가스가 공급된다. 이러한 상부판(113)은 공급 가스의 경로나 형성 위치에 의해 변경될 수 있으며, 이에 대해 한정하지는 않는다.The reaction vessel 112 functions as a cylinder, and the chamber 110 is provided therein. An upper plate 113 is disposed above the reaction vessel 112, and various supply gases are supplied through the upper plate 113. The top plate 113 may be changed by the path or the formation position of the supply gas, but is not limited thereto.

상기 통로(118)는 상기 챔버(110)의 내부 및 외부로 상기 웨이퍼 캐리어(130)의 이송을 용이하게 하기 위한 구멍이다. 이러한 통로(118)는 상기 웨이퍼 캐리어(130)의 크기 변경에 따라 변경될 수 있으며, 그 구체적인 크기나 형상에 대해 한정하지는 않는다.The passage 118 is a hole for facilitating the transfer of the wafer carrier 130 into and out of the chamber 110. The passage 118 may be changed according to the size change of the wafer carrier 130, and is not limited to the specific size or shape.

상기 배출구(119)는 상기 챔버(110)의 바닥면 중앙에 배치되며, 가스를 외부로 배출하게 된다. 이러한 배출구 구조에 대해 한정하지는 않는다.The outlet 119 is disposed at the center of the bottom surface of the chamber 110 and discharges gas to the outside. There is no limitation on this outlet structure.

도 1 및 도 3에 도시된 바와 같이, 상기 웨이퍼 캐리어(130)는 상판(131)이 평평한 형태이고, 측면이 상기 상판 둘레에서 수직하게 하 방향으로 연장된 측면 커버(132)로 이루어지며, 상기 상판(131)에는 다수개의 포켓(120)이 배치되며, 상기 포켓(120)에는 웨이퍼가 로딩된다. 상기 측면 커버(132)는 히터(140)의 측면 방향보다 더 낮은 위치에 원통형으로 형성된다. As shown in FIGS. 1 and 3, the wafer carrier 130 includes a top cover 131 having a flat shape, and a side cover 132 extending in a downward direction vertically around the top plate. A plurality of pockets 120 are disposed in the upper plate 131, and a wafer is loaded in the pockets 120. The side cover 132 is formed in a cylindrical shape at a lower position than the side direction of the heater 140.

여기서, 상기 웨이퍼 캐리어(130)의 상판 아래에는 복수개의 히터(140)가 배치되며, 상기 히터(140)에는 가열 전극(145)이 연결된다. 상기 히터(140)는 상기 가열 전극(145)으로 전달되는 열을 방출하여, 상판(131)을 소정 온도로 가열시켜 준다. 상기 히터(140) 아래에는 베이스 플레이트(150)가 배치된다.Here, a plurality of heaters 140 are disposed below the upper plate of the wafer carrier 130, and a heating electrode 145 is connected to the heaters 140. The heater 140 emits heat transferred to the heating electrode 145 to heat the upper plate 131 to a predetermined temperature. The base plate 150 is disposed below the heater 140.

상기 측면 커버(132)는 상기 상판(131)의 둘레에서 수직 하 방향으로 연장되며, 내부의 히터(140)로부터 측면으로 방출되는 열을 커버할 수 있게 된다. The side cover 132 extends vertically downward from the circumference of the upper plate 131 and may cover heat emitted to the side from the heater 140 therein.

도 2에 도시된 바와 같이, 상기 측면 커버(132)는 원통 형태로 형성되며, 그 외측에는 노브(133)가 배치되며, 측변 커버(132)의 내주변에서 내측 방향으로 돌출된 제 기어부(134)에는 저면에 기어 구조(135)로 형성된다. 상기 노브(133)는 트랜 스퍼 포크(transfer fork)에 의해 상기 웨이퍼 캐리어(130)를 로딩 또는 언로딩하기 위한 손잡이 형태로 형성된다.As shown in FIG. 2, the side cover 132 is formed in a cylindrical shape, and a knob 133 is disposed outside the side cover 132, and a first gear part protruding inward from an inner periphery of the side cover 132 ( 134 has a gear structure 135 on the bottom. The knob 133 is formed in the form of a handle for loading or unloading the wafer carrier 130 by a transfer fork.

상기 측면 커버(132)의 내측에 형성된 제 1기어부(134)는 상기 웨이퍼 캐리어(130)를 회전시켜 주기 위해 지지부(160)의 상단 제 2기어부(161)와 결합된다. 상기 측면 커버(132)의 내측에 형성된 제 1기어부(134)는 상기 지지부(160)의 제 2기어부(161)와 서로 맞물려 있는 구조 즉, 치 구조 또는 요철 구조로 결합됨으로써, 상기 지지부(160)의 회전에 따라 상기 웨이퍼 캐리어(130)는 회전하게 된다. 이때 상기 웨이퍼 캐리어(130)는 수 백회 또는 천회 이상의 RPM 사이로 회전하게 된다. 이러한 웨이퍼 캐리어(130)는 측변 커버(132)를 이용하여 히터(140)의 측면 열을 차단하고, 회전에 따른 이탈을 방지할 수 있다. 또한 상기 웨이퍼 캐리어(130)의 이탈을 방지함으로써, 이탈시 히터에 가해지는 히터 파손 문제를 해결할 수 있다.The first gear part 134 formed inside the side cover 132 is coupled to the upper second gear part 161 of the support part 160 to rotate the wafer carrier 130. The first gear part 134 formed inside the side cover 132 is coupled to the second gear part 161 of the support part 160 in a structure that is engaged with each other, that is, a tooth structure or an uneven structure, thereby supporting the support part ( As the 160 is rotated, the wafer carrier 130 rotates. At this time, the wafer carrier 130 is rotated between a few hundred times or a thousand or more RPM. The wafer carrier 130 may block side heat of the heater 140 by using the side cover 132, and may prevent the wafer carrier 130 from being separated due to rotation. In addition, by preventing the wafer carrier 130 from being separated, a problem of heater damage applied to the heater during the separation may be solved.

이러한 상기 지지부(160)는 상기 측면 커버(132)에 대응되는 구조로 예컨대, 원통 형상으로 형성될 수 있으며, 상기 측면 커버(132)의 내주변으로 결합된다. 상기 지지부(160)는 몰디(Moly) 재질로 이루어질 수 있다.The support part 160 may have a structure corresponding to the side cover 132, for example, may have a cylindrical shape, and may be coupled to an inner circumference of the side cover 132. The support part 160 may be made of a Moly material.

상기 지지부(160)의 하단(162)은 외측으로 돌출되며, 상기 회전부(170)의 상단과 볼트(163)로 체결된다. 상기 회전부(170)는 벨트(175)에 의해 회전하게 된다. 상기 벨트(175)는 상기 회전부(170)에 밀착 결합되어, 상기 반응 용기(112)의 외측에 배치된 모터(180)에 의해 회전하면서 상기 회전부(170)를 회전시켜 준다. 여기서, 상기 지지부(160)과 회전부(170) 사이의 결합 구조는 외측에 배치하여, 챔버 내부에서 볼트 결합을 용이하게 할 수 있다.The lower end 162 of the support part 160 protrudes outward and is fastened to the upper end of the rotating part 170 by a bolt 163. The rotating part 170 is rotated by the belt 175. The belt 175 is tightly coupled to the rotating unit 170 to rotate the rotating unit 170 while rotating by the motor 180 disposed outside the reaction container 112. Here, the coupling structure between the support unit 160 and the rotating unit 170 may be disposed on the outside to facilitate bolt coupling inside the chamber.

도 2를 참조하면, 웨이퍼 캐리어(130)는 로딩 또는 언 로딩되는 데, 이때 상기 측면 커버(132)에 형성된 노브(133)에 트랜스퍼 포크가 걸쳐짐으로써, 상기 트랜스퍼 포크를 통해 상기 웨이퍼 캐리어(130)가 로딩 또는 언로딩되며, 통로를 통해 이송될 수 있다.Referring to FIG. 2, the wafer carrier 130 is loaded or unloaded, wherein a transfer fork is covered by a knob 133 formed on the side cover 132, and thus the wafer carrier 130 is transferred through the transfer fork. ) Can be loaded or unloaded and transported through the passageway.

도 3은 실시 예에 따른 웨이퍼 캐리어의 사시도이다.3 is a perspective view of a wafer carrier according to an embodiment.

도 3을 참조하면, 웨이퍼 캐리어(130)의 상판(131)에는 다수개의 포켓(120)이 형성되며, 상기 측면 커버(132)의 외측에는 노브(133)가 돌출되고, 상기 측면 커버(132)의 내주변에는 제 1기어부(134)가 형성된다. 여기서, 상기 측면 커버(132)의 하단은 웨이퍼 캐리어(130)의 아래에 배치되는 히터를 커버할 수 있는 영역까지 형성될 수 있다.Referring to FIG. 3, a plurality of pockets 120 are formed in the upper plate 131 of the wafer carrier 130, a knob 133 protrudes outside the side cover 132, and the side cover 132 is formed. The first gear portion 134 is formed in the inner circumference of the. Here, the lower end of the side cover 132 may be formed up to an area that can cover the heater disposed below the wafer carrier 130.

이상에서 본 발명에 대하여 실시 예를 중심으로 설명하였으나 이는 단지 예시일 뿐 본 발명의 실시 예를 한정하는 것이 아니며, 본 발명의 실시 예가 속하는 분야의 통상의 지식을 가진 자라면 본 발명의 본질적인 특성을 벗어나지 않는 범위에서 이상에 예시되지 않은 여러 가지의 변형과 응용이 가능함을 알 수 있을 것이다. 예를 들어, 본 발명의 실시 예에 구체적으로 나타난 각 구성 요소는 변형하여 실시할 수 있는 것이다. 그리고 이러한 변형과 응용에 관계된 차이점들은 첨부된 청구 범위에서 규정하는 본 발명의 범위에 포함되는 것으로 해석되어야 할 것이다.The present invention has been described above with reference to the embodiments, which are merely examples and are not intended to limit the embodiments of the present invention. Those skilled in the art to which the embodiments of the present invention pertain have the essential characteristics of the present invention. It will be appreciated that various modifications and applications not illustrated above are possible without departing from the scope of the invention. For example, each component shown in detail in the embodiment of the present invention may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

도 1은 실시 예에 따른 반도체 제조장치를 나타낸 측 단면도.1 is a side cross-sectional view showing a semiconductor manufacturing apparatus according to an embodiment.

도 2는 도 1의 웨이퍼 캐리어의 결합 전 상태를 나타낸 측 단면도.FIG. 2 is a side cross-sectional view showing a state before bonding of the wafer carrier of FIG. 1. FIG.

도 3은 도 1의 웨이퍼 캐리어의 사시도.3 is a perspective view of the wafer carrier of FIG. 1.

Claims (6)

챔버;chamber; 상기 챔버 내에서 포켓을 구비한 상판 및, 상기 상판 둘레를 따라 아래 방향으로 연장된 측면 커버를 포함하는 웨이퍼 캐리어;A wafer carrier comprising a top plate with a pocket in the chamber, and a side cover extending downwardly around the top plate; 상기 웨이퍼 캐리어의 상판 아래에 배치된 히터;A heater disposed under the top plate of the wafer carrier; 상기 웨이퍼 캐리어의 회전을 위해 상기 측면 커버에 결합된 원통형의 지지부를 포함하는 반도체 제조장치. And a cylindrical support coupled to the side cover for rotation of the wafer carrier. 제 1항에 있어서,The method of claim 1, 상기 웨이퍼 캐리어의 측면 커버 외측에는 상기 웨이퍼 캐리어를 로딩 또는 언로딩하기 위해 형성된 노브를 포함하는 반도체 제조장치.And a knob formed outside the side cover of the wafer carrier for loading or unloading the wafer carrier. 제 1항에 있어서,The method of claim 1, 상기 웨이퍼 캐리어의 측면 커버는 원통형으로 형성되며,The side cover of the wafer carrier is formed in a cylindrical shape, 상기 측면 커버의 내주변 및 상기 지지부의 상단에는 서로 맞물려있는 기어부를 포함하는 반도체 제조장치. The inner peripheral portion of the side cover and the upper end of the support portion semiconductor manufacturing apparatus comprising a gear portion engaged with each other. 제 1항에 있어서,The method of claim 1, 상기 지지부의 하부에는 상기 지지부에 결합된 원통형의 회전부; 상기 회전 부를 회전시켜 주도록 모터에 결합된 벨트를 포함하는 반도체 제조장치.A cylindrical rotating part coupled to the support part below the support part; And a belt coupled to the motor to rotate the rotating unit. 제 1항에 있어서, The method of claim 1, 상기 지지부는 몰리 재질을 포함하는 반도체 제조장치.The support unit is a semiconductor manufacturing apparatus comprising a molle material. 제 1항에 있어서,The method of claim 1, 상기 측면 커버는 상기 히터의 측면 방향 위치보다 낮은 위치에 형성되는 반도체 제조장치.And the side cover is formed at a position lower than a lateral position of the heater.
KR1020080039921A 2008-04-29 2008-04-29 Semiconductor Manufacturing Apparatus KR20090114132A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111212931A (en) * 2017-10-27 2020-05-29 应用材料公司 Single wafer processing environment with spatial separation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111212931A (en) * 2017-10-27 2020-05-29 应用材料公司 Single wafer processing environment with spatial separation

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