JP2008025007A - Substrate treating apparatus, and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To attain the uniform feeding (exhausting) of a gas and the high speed replacement of the gas in a treating chamber small in inner volume. <P>SOLUTION: The substrate treating apparatus comprises: a treating chamber 1 for treating a substrate 2; a holding tool which is provided to be freely elevated/lowered in the treating chamber 1 and holds the substrate 2; a feeding port 3 which is provided an upper part of the holding tool and feeds a gas into the treating chamber 1; an exhaust duct 70 which is provided at the periphery of the holding tool and exhausts the gas fed into the treating chamber 1; and an exhaust port 5 which is provided at a lower part than the upper face of the exhaust duct 70 during treatment of a substrate and exhausts the gas exhausted from the exhaust duct 70 to the outside of the treating chamber 1. At least one of members constituting the exhaust duct 70 is constituted to be freely elevated/lowered. The member constituted to be freely elevated/lowered is constituted of a first recessed member and a second recessed member at least a portion of which is accommodated in the recessed part of the first recessed member and which is provided so as to move relatively to the first recessed member. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for depositing a thin film on a substrate and a method for manufacturing a semiconductor device.

  In recent years, with the miniaturization of semiconductors, atomic layer level film formation has attracted attention in film formation processes in semiconductor manufacturing.

As the film forming method, ALD (Atomic Layer Deposition) can be mentioned. As a form of this reaction, a metal-containing raw material a and an oxidizing raw material b (O ₃ , O ₂ , H ₂ O, etc.) are alternately supplied onto a substrate set at a relatively low temperature. Unlike the CVD (Chemical Vapor Deposition), which has been the mainstream, it is a method of depositing through a process such as adsorption / desorption of the source gas.
The merits of this film formation method are (1) good film thickness control, (2) that the temperature uniformity of the substrate is not so required, and (3) the film formation process that theoretically requires a self-limit. The influence of the flow is small. On the other hand, the disadvantage is that the components contained in the source gas can be easily taken into the film. In some cases, film quality improvement processing is performed after the film formation in order to remove the incorporated components in the film and obtain a high-quality film.

  Also, CVD (Chemical Vapor Deposition), particularly MOCVD (Metal Organic Chemical Vapor Deposition), may apply a cycle method as described above to obtain a high-quality film. For example, it is CVD (hereinafter referred to as cyclic CVD) to which film formation → purge → film quality improvement → purge is regarded as one step and a cycle method of forming a film in a plurality of steps is applied. In order to improve the film quality in this cyclic CVD film formation, a method of removing impurities (such as C) by high-temperature treatment (annealing treatment) or active means (plasma or the like) every several layers or after completion of film formation is used. .

In general, the source gas a and the source gas b are very highly reactive, not only when they are supplied simultaneously, but also when they are supplied alternately as in ALD film formation and cyclic CVD film formation. If the process gas remains, it may be a factor causing generation of foreign matters and film quality deterioration due to a gas phase reaction. Therefore, after supplying the raw material gas a and the raw material gas b, it is necessary to perform sufficient evacuation or purging with an inert gas through the exhaust gas flow path so that there is no residual pre-process gas. However, in ALD film formation, the film thickness formed per cycle is <1 mm due to atomic layer deposition and is very thin. Further, even in the case of cyclic CVD film formation, the film thickness formed per cycle is thin because several atomic layers to several molecular layers are deposited. For this reason, in a single wafer type apparatus or the like, the residual gas is exhausted at a high speed within several to several tens of seconds in order to increase the throughput.
High-speed exhaust of the residual gas is important because the process proceeds in a cyclic process in the processing chamber, particularly in ALD film formation and cyclic CVD film formation.

  In the above-described ALD film formation and cyclic CVD film formation, in addition to high-speed exhaust of residual gas, in-plane film thickness uniformity of the thin film formed on the substrate is required. For this purpose, the gas is uniformly distributed on the substrate. Is required to supply. However, since uniform gas supply and residual gas high-speed exhaustion tend to conflict, there is a problem in realizing high-speed exhaust of residual gas while ensuring uniform gas supply to the substrate.

  Note that this problem is not limited to ALD film formation or cyclic CVD film formation, but is also common to semiconductor manufacturing apparatuses and semiconductor device manufacturing methods.

  An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of solving the above-described problems of the prior art and reliably realizing high-speed exhaust of residual gas while ensuring gas supply uniformity. There is to do.

  According to the first aspect of the present invention, a processing chamber that processes a substrate, a holder that is provided in the processing chamber so as to be movable up and down, and that holds the substrate, and a gas that is provided above the holding tool and is disposed in the processing chamber. A supply port for supplying gas, an exhaust duct for exhausting the gas supplied to the processing chamber provided around the holder, and an exhaust duct provided below the upper surface of the exhaust duct during substrate processing. An exhaust port for exhausting the generated gas to the outside of the processing chamber, at least a part of the member constituting the exhaust duct is configured to be movable up and down, and the member configured to be movable up and down is a first concave member And a substrate processing apparatus comprising a second concave member that is at least partially accommodated in the concave portion of the first concave member and is provided so as to be relatively movable with respect to the first concave member. .

  According to the second aspect of the present invention, the step of carrying the substrate into the processing chamber, and placing the substrate carried into the processing chamber on the holder by raising the holder provided in the processing chamber. And a step of supplying gas to the substrate placed on the holder, exhausting gas by an exhaust duct provided around the holder, and exhausting the gas exhausted by the exhaust duct to the exhaust A step of processing the substrate by exhausting it out of the processing chamber from an exhaust port provided below the upper surface of the duct, and a step of bringing the processed substrate into a state where it can be unloaded by lowering the holder. And a step of unloading the processed substrate from the processing chamber, and in the step of raising or lowering the holder, at least a part of the members constituting the exhaust duct is raised or lowered together with the holder. In addition, the member that rises or falls together with the holder is constituted by a first concave member and a second concave member that is at least partially accommodated in the concave portion of the first concave member, and the holder is A method of manufacturing a semiconductor device is provided in which the second concave member moves relative to the first concave member when being raised or lowered.

  According to the present invention, it is possible to reliably realize gas supply uniformity and residual gas high-speed exhaust.

Embodiments of the present invention will be described below with reference to the drawings.
First, prior to the description of the embodiment of the present invention, one aspect of the basic configuration will be described.
[Basic configuration]
5 and 6 are cross-sectional views for explaining a single-wafer type substrate processing apparatus according to an aspect of the basic configuration. FIG. 5 is a longitudinal sectional view during substrate processing, and FIG. 6 is a longitudinal sectional view during loading / unloading of the substrate.

  The substrate processing apparatus includes a processing chamber 1 that processes the substrate 2, a holder 160 that can be moved up and down in the processing chamber 1, a substrate 160 that holds the substrate 2, and a gas that is provided above the holder 160 and enters the processing chamber 1. Is provided below the upper surface of the exhaust duct 35 provided at the periphery of the holder 160, the annular exhaust duct 35 for exhausting the gas supplied into the processing chamber 1 and the substrate duct processing. And an exhaust port 5 for exhausting the gas exhausted by the exhaust duct 35 to the outside of the processing chamber 1.

  The processing chamber 1 is formed in a flat reaction vessel 45 having a circular cross section. The reaction vessel 45 is hermetically sealed by a lower vessel 47 having an upper opening and an upper vessel 46 as a processing chamber lid that covers the opening, and can be kept in a vacuum. The processing chamber 1 is configured to process a substrate 2, for example, a single silicon substrate. The lower container 47 and the upper container 46 are made of a metal such as aluminum or stainless steel, for example.

  Three to four lift pins 8 for temporarily holding the substrate 2 at the time of loading / unloading the substrate are provided on the bottom surface 42a set in the lower portion 47 of the processing chamber lower portion 1b. Since the lift pins 8 are in direct contact with the substrate 2, it is desirable to form the lift pins 8 from a material such as quartz or alumina. The lift pin 8 is attached to a lift pin base 15 made of the same material as the lift pin 8 by an aluminum bolt 14 and fixed to the bottom surface 42 a of the aluminum reaction vessel 45. The lift pins 8 are provided so as to be able to pass through the through holes 61 provided in the susceptor 60 constituting the holder 160. At the substrate transferable position of the susceptor 60 (the illustrated position in FIG. 6), the lift pins 8 protrude from the through holes 61 and hold the substrate 2. At the substrate processing position of the susceptor 60 (the position shown in FIG. 5), the lift pins 8 are retracted from the through holes 61 and the substrate 2 is held on the susceptor 60.

The holder is composed of a susceptor 60. The susceptor 60 includes a support shaft 59, a susceptor base 9, and a bellows 12.
The susceptor 60 is provided in the processing chamber 1 and has a disk shape, and is configured to hold the substrate 2 in a substantially horizontal posture thereon. The susceptor 60 incorporates a heater (not shown) such as a ceramic heater controlled by the controller 50 to heat the substrate 2 to a predetermined temperature.
The film formation process is performed at the substrate processing position (shown in FIG. 5) of the susceptor 60, and the substrate 2 is transferred at the lower substrate transferable position (shown in FIG. 6). The susceptor 60 is made of, for example, quartz, carbon, ceramics, silicon carbide (SiC), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), or the like.
The support shaft 59 is inserted into the processing chamber 1 in the vertical direction through a through hole 58 provided in the bottom center of the lower container 47 of the processing chamber 1, and supports the susceptor 60 at the upper end thereof.
The susceptor base 9 is provided at the lower end of the support shaft 59 and connected to an elevating mechanism (not shown) provided outside the processing chamber 1. The susceptor 60 can be moved up and down via the support shaft 59 by moving the susceptor base 9 up and down by the lifting mechanism.
The bellows 12 holds the vacuum in the processing chamber 1 by surrounding the support shaft 59 between the susceptor base 9 and the lower container 47 through which the support shaft 59 passes.

The supply port 13 includes a shower head 16, a dispersion plate 17, a gas introduction plate 22, and a gas introduction unit 23.
The shower head 16 is fitted into the central opening of the upper container 46 and is provided above the susceptor 60. The central part of the shower head 16 facing the susceptor 60 is constituted by a shower plate 16a having a large number of holes 16b.
The dispersion plate 17 has a large number of holes 17a and is provided on the shower plate 16a. A lower space 17b is formed between the dispersion plate 17 and the shower plate 16a to disperse the gas introduced from the numerous holes 17a of the dispersion plate 17.
The gas introduction plate 22 has an opening 22 a for introducing gas at the center, and is provided on the dispersion plate 17. An upper space 17c for dispersing the gas introduced from the opening 22a is formed between the gas introduction plate 22 and the dispersion plate 17.
The gas introduction part 23 is composed of a junction pipe that joins a gas supplied from above and two kinds of gases supplied from the side, and is vertically connected to the opening 22 a of the gas introduction plate 22. The source gas is supplied from the side opening 3 of the gas introduction part 23. An oxidant is supplied from the upper opening 4 of the gas inlet 23, and the source gas and the oxidant are supplied alternately (ALD).

  The gas introduced from the gas introduction part 23 into the opening 22a of the gas introduction plate 22 enters the lower space 17b through the numerous holes 17a of the dispersion plate 17 through the upper space 17c, and further passes through the numerous holes 16b of the shower head 16. Then, it is uniformly supplied on the substrate 2 in the form of a shower.

Specifically, the source gas is Ru (EtCp) ₂ (bisethylcyclopentadienyl ruthenium), which is an organic liquid source used in forming a metal film, for example, a ruthenium film. The oxidizing agent is a gas containing oxygen (O ₂ ), which is a gas highly reactive with the organic liquid raw material, for example, O radical, H ₂ O, O ₃ .

The exhaust duct 35 includes a conductance plate 29 and a lower plate 7.
The conductance plate 29 is held near the substrate processing position in the processing chamber 1. The lower plate 7 is made of a concave member having a concave portion 37, is provided in a ring shape on the outer periphery of the susceptor 60, and moves up and down together with the susceptor 60. When the susceptor 60 is raised and the lower plate 7 is moved to the substrate processing position, the conductance plate 29 held at the substrate processing position closes the concave portion 39 of the lower plate 7, thereby causing the gas flow path in the concave portion 39. An exhaust duct 35 as a region A is configured.

  When the susceptor 60 provided with the exhaust duct 35 in the periphery is at the substrate processing position, the exhaust duct 35, the substrate 2 and the susceptor 60 partition the inside of the processing chamber 1 up and down, and the processing chamber upper part 1a above the exhaust duct 35, A processing chamber lower portion 1 b below the exhaust duct 35 is formed above and below the processing chamber 1.

The reason why the exhaust duct 35 is configured to be separable into the conductance plate 29 and the lower plate 7 is as follows.
In order to allow the susceptor 60 provided with the lower plate 7 on the outer periphery to move up and down in the processing chamber 1, it is necessary to secure a gap 38 between the processing chamber side surface 40 b and the lower plate 7 side surface. For this reason, a part of the gas supplied to the processing chamber upper portion 1a during the substrate processing is not discharged into the concave portion 37 of the lower plate 7 constituting the exhaust duct 35, and passes through the gap 38 to the processing chamber lower portion 1b. There is a risk of getting around.
In this respect, if the lower plate 7 is provided so as to be movable up and down and the conductance plate 29 is configured to be held at the substrate processing position, the substrate processing is performed when the lower plate 7 is carried together with the susceptor 60 to the substrate processing position. Since the gap 38 can be closed by the conductance plate 29 held in position, the gap 38 is closed during substrate processing while securing the gap 38 that allows the susceptor 60 to move up and down, and a processing chamber for a part of the gas. The wraparound to the lower part 1b can be eliminated.

  The exhaust port 5 exhausts the gas exhausted by the exhaust duct 35 to the outside of the processing chamber 1. The exhaust port 5 is provided on the other side opposite to the substrate transfer port 10 provided on one end side of the lower container 47, and is provided below the upper surface of the exhaust duct 35 during substrate processing (see FIG. 5). The exhaust port 5 is connected to a vacuum pump (not shown) so as to exhaust the gas exhausted from the exhaust duct 35 to the outside of the processing chamber 1. The inside of the processing chamber 1 can be controlled to a predetermined pressure by pressure control means (not shown) as necessary.

Here, the above-described separable exhaust duct 35 will be described more specifically.
The lower plate 7 constituting a part of the exhaust duct 35 includes a ring-shaped concave portion 37 and a flange portion 37 a provided integrally on the inner upper portion of the concave portion 37. The flange portion 37 a functions as a locking portion that locks to the upper outer periphery of the susceptor 60. The recess 37 is provided so as to close the gap 38 between the side surface of the susceptor 60 and the processing chamber side surface 40b, and an exhaust path for guiding the gas supplied into the processing chamber upper portion 1a to the exhaust port 5 during substrate processing. Form.
The concave portion 37 is configured to have a plate exhaust port 28 that is open at the top and has a gas flow from the concave portion 37 to the exhaust port 5 on the exhaust port 5 side of the bottom. The flange portion 37 a is a ring that covers a part (outer peripheral portion) of the susceptor 60 and is placed on the susceptor 60 to prevent film deposition on the susceptor 60. The lower plate 7 is provided so that it can be moved up and down together with the susceptor 60 when the flange portion 37 a is placed on the susceptor 60.

The conductance plate 29 is held by a step portion 41 provided near the substrate processing position. The conductance plate 29 is composed of a single donut-shaped disk. The conductance plate 29 is provided with a hole 34 for accommodating the substrate 2 in the inner peripheral portion thereof, and a plurality of discharge ports 26 arranged in the circumferential direction at predetermined intervals on the outer peripheral portion covering the concave portion 37 of the lower plate 7. Is provided.
Since the conductance plate 29 is integrally formed, it is necessary to support the inner portion of the conductance plate 29 by the outer portion of the conductance plate 29 that is directly held by the step portion 41. Therefore, the discharge port 26 cannot be formed continuously and is discontinuous. Is formed.
The lower side surface of the lower container 47 is provided inside the processing chamber 1 from the upper side, and a portion where the lower inner side surface of the lower container 47 projects inward from the upper inner side surface is referred to as the step portion 41. By holding the conductance plate 29 on the step portion 41, the gap 38 between the step portion 41 and the conductance plate 29 in the processing chamber 1 is closed.

  It is preferable to use high temperature and high load quartz for the conductance plate 29 and the lower plate 7 supported by the susceptor 60. Compared to the reaction vessel 45 made of aluminum, it is resistant to high temperatures, and the emissivity ε is about 0.8 to about 0.8 compared to about 0.05 to 0.2 for aluminum, and tends to be maintained at a high temperature. Therefore, quartz can be kept at a high temperature (about 200 to 500 ° C.) as a material for the exhaust duct 35 in view of etching of reaction products deposited on the inner wall of the exhaust duct 35, and is considered suitable.

Here, the gas flow during the substrate processing will be described.
The gas supplied from the supply port 13 is dispersed by the dispersion plate 17 and the shower plate 16a, introduced into the processing chamber upper portion 1a, and outwardly in the substrate radial direction on the silicon substrate 2 in the processing chamber upper portion 1a. Flows radially. Then, the gas flows radially outwardly on the exhaust duct 35 provided on the outer periphery of the susceptor 60 and is discharged into the annular gas flow path region A from the discharge port 26 provided on the upper surface of the exhaust duct 35. The The discharged gas flows in the gas flow path region A in the circumferential direction of the susceptor and is exhausted from the plate exhaust port 28 to the exhaust port 5. Thereby, the source gas is prevented from flowing into the processing chamber lower portion 1 b, that is, the back surface of the susceptor 60 and the bottom surface 42 side of the processing chamber 1.

  The substrate processing apparatus according to one aspect of the basic configuration has a gas flow path volume between the upper surface of the susceptor 60 and the conductance plate 29, the inner wall surface of the upper container 46, and the upper inner wall surface of the lower container 47 in the substrate processing. By limiting to the upper part 1a of the processing chamber formed in the above and the gas flow path region A of the exhaust duct 35, the volume of the processing chamber 1 is reduced as a whole.

  As described above, the substrate processing apparatus according to one aspect of the basic configuration is configured.

  Next, a method of processing a substrate will be described as one step of manufacturing a semiconductor device using the substrate processing apparatus described above. Here, as described above, an ALD process for forming a ruthenium film on a silicon substrate will be described as an example.

  In FIG. 6, with the susceptor 60 lowered to the loading / unloading position, one silicon substrate 2 is loaded into the processing chamber 1 via the substrate transfer port 10 and transferred onto the lift pins 8. Hold. The susceptor 60 is raised to a predetermined substrate processing position by a lifting mechanism (not shown). At this time, the substrate 2 is automatically placed on the susceptor 60 from the lift pins 8. FIG. 6 shows this state.

  As shown in FIG. 5, the susceptor 60 is raised to the substrate processing position to form the processing chamber upper portion 1a having a small volume. Further, when the susceptor 60 is raised to the substrate processing position, the exhaust duct 35 is formed by covering the upper opening portion of the concave portion 37 of the lower plate 7 by the conductance plate 29 held at the substrate processing position. A gas flow path region A is formed. This gas flow path area A becomes an exhaust path.

  The heater is controlled by the controller 50 to heat the susceptor 60, and the silicon substrate 2 is heated for a predetermined time. The pressure in the processing chamber 1 is controlled by pressure control means (not shown). After the silicon substrate 2 is heated to a predetermined temperature and the pressure is stabilized, film formation is started. The film formation includes the following four steps, and the four steps are defined as one cycle, and the cycle is repeated a plurality of times until a film having a desired thickness is deposited.

In step 1, Ru (EtCp) ₂ gas is introduced from the side opening 3 of the supply port 13 through the diffusion plate 17 and the shower plate 16 a into the processing chamber 1 in a shower shape. At this time, Ru (EtCp) ₂ gas is supplied onto the silicon substrate 2 and adsorbed on the surface thereof. Excess gas flows from the discharge port 26 provided on the upper surface of the conductance plate 29 through the recess 37 of the lower plate 7, is exhausted from the plate exhaust port 28, and is exhausted from the exhaust port 5 to the outside of the processing chamber 1.

In step 2, Ar gas is supplied from the side opening 3 of the supply port 13 through the diffusion plate 17 and the shower plate 16 a into the processing chamber 1 in a shower shape. Ru (EtCp) ₂ gas remaining in the supply port and the processing chamber 1 is purged by Ar and flows in the recess 37 of the lower plate 7 from the discharge port 26 provided on the upper surface of the conductance plate 29, and the plate exhaust port 28. The air is further exhausted and exhausted from the exhaust port 5 to the outside of the processing chamber 1.

In step 3, the activated oxygen is supplied from the upper opening 4 of the supply port 13 through the diffusion plate 17 and the shower plate 16 a into the processing chamber 1 in a shower form. Note that oxygen may be supplied without being activated. The activated oxygen is supplied onto the silicon substrate 2 and forms a ruthenium film by surface reaction with the adsorbed Ru (EtCp) ₂ . Excess gas flows from the discharge port 26 provided on the upper surface of the conductance plate 29 through the recess 37 of the lower plate 7, is exhausted from the plate exhaust port 28, and is exhausted from the exhaust port 5 to the outside of the processing chamber 1.

  In step 4, Ar gas is supplied from the upper opening 4 of the supply port 13 through the diffusion plate 17 and the shower plate 16 a into the processing chamber 1 in a shower shape. Oxygen remaining in the supply port 13 and the processing chamber 1 is purged by Ar and flows into the recess 37 of the lower plate 7 from the discharge port 26 provided on the surface of the conductance plate 29, and is exhausted from the plate exhaust port 28. The gas is exhausted out of the processing chamber 1 through the exhaust port 5.

  The above-described four steps are set as one cycle, and this cycle is repeated a plurality of times until a ruthenium film having a desired thickness is deposited. The time required for the steps 1 to 4 is preferably 1 second or less in each step in order to improve the throughput. After the film formation is completed, the susceptor 60 is lowered to the loading / unloading position by the lifting mechanism, and the silicon substrate 2 is unloaded by the transfer robot (not shown) through the substrate transfer port 10 to the transfer chamber (not shown).

  The substrate temperature and the processing chamber pressure in each process are controlled by the controller 50 and pressure control means, respectively.

  The operational effects of one aspect of the basic configuration will be described below.

First, deposition of a film on the bottom surface 42 of the processing chamber 1 can be prevented. This is because the exhaust by the gas flow path region A of the exhaust duct 35 prevents the gas from flowing into the processing chamber lower portion 1b and reduces the contact between the gas and the inner wall surface in the processing chamber lower portion 1b. As a result, film deposition on the bottom surface 42 of the processing chamber 1, movable parts such as the susceptor 60 and the support shaft 59, the substrate transfer port 10, and the like can be greatly reduced, and the deposited film is peeled off during the operation of the movable part. This can effectively prevent the generation of particles.
Further, since it is possible to effectively prevent the film from being deposited on the bottom surface 42 of the processing chamber, the number of replacements of the processing chamber 1 can be reduced, the productivity of the apparatus can be improved, and the apparatus cost can be reduced.

Secondly, the gas contact area and flow path volume of the gas supplied from the supply port 13 can be reduced. The reason is that an exhaust duct 35 having a recess 37 is provided on the outer periphery of the susceptor 60, and a gap between the processing chamber side surface 40b and the susceptor 60 side surface is closed by the conductance plate 29 constituting the gas flow path region A. This is because the gas is exhausted from the gas flow path region A to the exhaust port 5 without passing through the lower chamber 1b.
By reducing the gas contact area in this manner, the amount of source gas deposited in the processing chamber can be reduced, and generation of particles can be suppressed.
Further, by reducing the flow path volume, the amount of the raw material gas itself in the processing chamber can be reduced, and the amount of the raw material gas and the amount of the residual raw material gas can be reduced. The gas can be purged. Therefore, in the film forming method in which two kinds of reaction gases are alternately supplied, the source gas can be supplied and the residual source can be purged in a short time.
As a result, a semiconductor manufacturing apparatus with high yield and high throughput can be realized.

Third, the volume of the entire processing chamber can be reduced. If the exhaust duct 35 having the gas flow path region A is fixed at the substrate processing position, the exhaust duct 35 and the substrate transfer port 10 are overlapped with each other in order to enable loading / unloading of the substrate into / from the processing chamber when loading / unloading the substrate. In order to avoid this, it is necessary to dispose the substrate transfer port 10 below the lower portion of the exhaust duct 35. If it does so, there exists a demerit that the height of the whole processing chamber will become high and the volume of the whole processing chamber will become large.
However, in the embodiment, as shown in FIG. 6, in the state where the susceptor 60 is lowered to the carry-in / carry-out position, the lower plate 7 constituting the exhaust duct 35 does not interfere with the board carry-in / carry-out. It can be arranged below the mouth 10. Further, at the time of substrate processing, the lower plate 7 can be disposed so as to overlap the substrate transfer port 10, and the height of the entire processing chamber can be lowered by the amount of the overlap. As a result, the volume of the entire processing chamber can be reduced, thereby further increasing the purge efficiency.

  Fourth, the flow path from the processing chamber upper portion 1 a leading to the gap 38 inevitably formed between the side surface of the conductance plate 29 and the processing chamber side surface 40 b is caused by the conductance plate 29 held on the step portion 41. Therefore, it is possible to prevent a part of the gas supplied to the processing chamber upper portion 1a during the substrate processing from flowing into the processing chamber lower portion 1b through the gap 38 without being discharged to the processing chamber lower portion 1b. it can.

In one embodiment of the basic configuration, Ru (EtCp) ₂ that is a metal-containing raw material is used as the first reaction gas, and oxygen O ₂ that is a gas containing oxygen or nitrogen is used as the second reaction gas. The gas used in the present invention can be appropriately selected from various types according to the application. For example, as a metal-containing source gas, in addition to a source material containing Ru, Si, Al, Ti, Sr, Y, Zr, Nb, Sn, Ba, La, Hf, Ta, Ir, Pt, W, Pb, Bi There are raw materials containing any of the metals. As the gas containing oxygen or nitrogen, in addition to O ₂ , any of O ₃ , NO, N ₂ O, H ₂ O, H ₂ O ₂ , N ₂ , NH ₃ , N ₂ H ₆ , There are these radical species or ionic species generated by activating any of them by an activating means.

  In addition, in the film formation method of one aspect of the basic structure, ALD is described and cyclic MOCVD is also referred to. In addition to this, a metal-containing raw material and oxygen or nitrogen are conventionally used. Needless to say, it can also be used in the MOCVD method in which gases are supplied simultaneously.

  As described above, according to this basic configuration, the processing chamber volume (gas contact volume) can be reduced, and the discharge time of the residual gas can be improved.

By the way, as shown in FIG. 5, in the annular exhaust duct 35 formed in the processing chamber 1 by the conductance plate 29 and the lower plate 7, it is difficult to obtain a large flow path cross-sectional area. It is not easy to get. In the exhaust duct 35 with insufficient conductance, when the gas discharged from the plurality of discharge ports 26 is exhausted to the plate exhaust port 28, the uniformity of the gas supplied to the processing chamber upper portion 1a in the substrate surface, There is a trade-off relationship with the exhaust speed of the gas exhausted from the exhaust port 26 to the plate exhaust port 28 via the exhaust duct 35.
Therefore, when the diameter of the discharge port 26 is increased, high-speed gas exhaust becomes possible, but it becomes difficult to ensure the uniformity of the gas supply in the substrate surface. Conversely, if the total conductance of the plurality of outlets 26 is sufficiently smaller than the flow conductance of the exhaust duct 35 in order to ensure the uniformity of the gas supply in the substrate surface, high-speed gas exhaust becomes difficult. For this reason, it is difficult to perform high-speed gas exhaust while ensuring uniformity of gas supply.

  If the volume in the recess 37 of the lower plate 7 is increased in the height direction, for example, to increase the flow passage cross-sectional area of the exhaust duct 35, the lower plate 7 is lowered when the susceptor 60 is lowered to the substrate transportable position. However, the lower plate 7 cannot be made too large in the height direction because the substrate transport path from the substrate transport port 10 is blocked and obstructs the substrate transport.

Therefore, it is conceivable that the lower plate 7 is eliminated, and the entire space formed in the lower part 1b of the processing chamber in the reaction vessel 45 is used as an exhaust gas flow path so that the conductance of the exhaust gas flow path is sufficiently increased. If the conductance of the exhaust gas flow path is sufficiently large, even when the gas discharged from the plurality of discharge ports 26 of the conductance plate 29 is exhausted in the exhaust port 5, the exhaust buffer capacity is large, This is because even if the diameter of the discharge port 26 is increased, high uniformity of gas supply onto the substrate can be ensured while realizing high-speed gas exhaust.
In this case, the reaction product is deposited on the inner wall of the lower part 1b of the processing chamber constituting the exhaust gas flow path, the back surface of the susceptor 60, and the like. When the deposited reaction product is a high dielectric film or the like where it is difficult to increase the etching rate, it is necessary to perform cleaning with a fluorine-based gas at a high temperature in order to remove the reaction product. However, in the case of high temperature gas cleaning, it is known that etching is difficult unless the gas temperature is higher than 200 ° C. Unlike the exhaust duct made of high temperature resistant quartz, the reaction vessel 45 made of aluminum is Since the heat resistance is low, cleaning of the exhaust gas passage becomes a problem.

  As described above, in the above basic configuration, there is room for improvement in order to achieve high-speed gas replacement while ensuring uniform gas supply. Therefore, in the present embodiment described below, the gas flow path area of the exhaust duct 35 is made variable so that the gas flow path area is enlarged during substrate processing and the gas flow path area is reduced during substrate transfer. Solves the above problems.

[Embodiments of the present invention]
1 and 2 are sectional views of a substrate processing apparatus in the present embodiment in which such a basic configuration is improved. FIG. 1 shows a substrate processing state, and FIG. 2 shows a substrate transfer state. The basic components of the substrate processing apparatus are the same as those of the basic configuration described above with reference to FIGS. The present embodiment is different from one aspect of the basic configuration in the exhaust duct 70.

The exhaust duct 70 is provided in an annular shape around the susceptor 60 and is configured to exhaust the gas supplied into the processing chamber 1. In the embodiment, the member constituting the exhaust duct 70 is configured to be separable from the lower ring 71 as at least a part of the member constituting the exhaust duct 70 and the conductance plate 29 closing the recess 75 of the lower ring 71. The
The lower ring 71, which is at least a part of the members constituting the exhaust duct 70, is configured to be movable up and down, and the lower ring 71, which is a member configured to be movable up and down, is configured in a multi-tank structure. The outer lower ring 72 that is the first concave member and the inner lower ring 73 that is the second concave member are configured in a two-tank structure. An outer lower ring 72 that is a first concave member, and a second concave member that is at least partially accommodated in the concave portion 76 of the outer lower ring 72 and is provided to be movable relative to the outer lower ring 72. And an inner lower ring 73.

  The outer lower ring 72 has a U-shaped cross section and has the recess 76 for exhausting the gas supplied into the processing chamber 1. The inner lower ring 73 also has a U-shaped cross section and has a recess 77 for exhausting the gas supplied into the processing chamber 1.

  The conductance plate 29 is basically the same as that in the basic configuration as indicated by the same reference numeral as the conductance plate of the basic configuration, and the step 41 of the lower container 47 provided near the substrate processing position. Retained. The conductance plate 29 is formed of a single donut-shaped disk, and a hole 34 for receiving the substrate 2 is provided in the inner periphery thereof, and a predetermined interval is provided in the outer periphery covering the recess 75 of the lower ring 71. A plurality of outlets 26 opened and arranged in the circumferential direction are provided. The discharge port 26 is configured to circulate the gas supplied into the processing chamber upper portion 1 a into the recess 75 of the lower ring 71.

  The outer lower ring 72 is integrally provided with a flange 72 a as an engaging portion that engages with an upper outer peripheral edge of the susceptor 60 at an upper portion on the susceptor 60 side. The outer lower ring 72 can be moved up and down together with the susceptor 60 by being supported by the susceptor 60 by the flange 72a. Since the outer lower ring 72 is supported by the susceptor 60, the top of the outer lower ring 72 and the upper surface of the susceptor 60 are substantially flush with each other. The outer lower ring 72 is provided with an opening 72c through which the inner lower ring 73 can be inserted in the bottom 72b of the recess 76.

The inner lower ring 73 is provided with a flange 73a that functions as a stopper by engaging with the edge of the opening 72c of the outer lower ring 72 at the upper part thereof. The inner lower ring 73 is provided to be supported by the outer lower ring 72 by being locked to the edge of the opening 72 c of the outer lower ring 72. Further, the inner lower ring 73 is inserted into the opening 72 c of the outer lower ring 72 in a nested manner, and at least a part of the inner lower ring 73 is accommodated in the concave portion 76 of the outer lower ring 72. Relative movement is possible.
An opening 73 c for allowing gas to flow from the recess 77 to the exhaust port 5 is provided on the bottom 73 b of the recess 77 of the inner ring 73.

  FIG. 3 shows a detailed configuration of the above-described outer lower ring 72 constituting the exhaust duct. (A) is a top view, (b) is a bb sectional view taken on the line. FIG. 4 shows a detailed configuration of the inner lower ring 73 described above. (A) is a top view, (b) is a bb sectional view taken on the line. As shown in FIG. 4A, the opening 73c is provided in an arc shape on the exhaust port side.

  Next, the operation of the exhaust duct 70 will be described.

First, as shown in FIG. 2, the conductance plate 29 is held on the step portion 41. Then, the susceptor 60 is lowered by an elevating mechanism (not shown) and carried to the substrate transfer position. At this time, the bottom 73 b of the inner lower ring 73 contacts the bottom surface 42 of the lower container 47 and is pushed up by the bottom surface 42. As a result, most (a part) of the inner lower ring 73 is accommodated in the recess 76 of the outer lower ring 72. Accordingly, the height (thickness from the top to the bottom) and the volume of the lower ring 71 that is at least a part of the members constituting the exhaust duct 70 are reduced.
Further, when a part of the inner lower ring 73 is accommodated in the recess 76 of the outer lower ring 72, the position of the top of the inner lower ring 73 is made to coincide with the position of the top of the outer lower ring 72. , So that the top of the upper part does not protrude upward from the outer lower ring 72. Since the inner lower ring 73 is accommodated up to the top in the recess 76 of the outer lower ring 72, there is an obstacle to the substrate loading / unloading path in the processing chamber 1 on the extension line of the substrate transfer port 10 opened in the side wall of the lower container 47. Must not. As a result, the processed substrate 2 held by the lift pins 8 protruding from the through-hole 61 of the susceptor 60 at the substrate transfer position is removed from the reaction container 45 by the substrate transfer mechanism (not shown) via the substrate transfer port 10. Will be carried out smoothly. Further, the substrate 2 to be processed next is smoothly carried into the reaction container 45 through the substrate transfer port 10 and held on the lift pins 8 protruding from the through holes 61 of the susceptor 60 at the substrate transfer position.

  Thereafter, when the susceptor 60 is raised by an elevating mechanism (not shown), the inner lower ring 73 moves relative to the outer lower ring 72 as shown in FIG. 1, so that the outer lower ring 72 of the inner lower ring 73 is moved. The height against is reduced. When the flange 72a comes into contact with the opening 72c of the outer lower ring 72, at least a part of the inner lower ring 73 accommodated in the outer lower ring 72 is only the flange 73a. Therefore, the concave portion 77 of the inner lower ring 73 is positioned below the bottom portion 72 b of the outer lower ring 72. As a result, the recess of the lower ring 71 becomes a recess 75 having a large channel cross-sectional area in which the recess 76 of the inner lower ring 73 is added to the recess 76 of the outer lower ring 72, and at least a part of the members constituting the exhaust duct 70. The height and volume of the lower ring 71, which is

  Thereafter, as shown in FIG. 1, the lower ring 71 is lifted together with the susceptor 60, the height thereof is increased, and the lower ring 71 is carried to the substrate processing position, and the top of the lower ring 71 is held by the step portion 41 near the substrate processing position. At the time of contact with the conductance plate 29, the recess 75 of the lower ring 71 is closed, and the exhaust duct 70 is formed with the inside of the recess 75 as the gas flow path region B.

At the substrate processing position, after the processing of the substrate 2 is completed, the susceptor 60 on which the substrate 2 is mounted is lowered again while leaving the conductance plate 29 on the stepped portion 41, and as shown in FIG. The bottom portion 73 b is in contact with the bottom surface 42 of the lower container 47 and is pushed up by the bottom surface 42 so that most of the concave portion 77 of the inner lower ring 73 is accommodated in the concave portion 76 of the outer lower ring 72. The position of the top of the inner lower ring 73 coincides with the position of the top of the outer lower ring 72 so that the height and volume of the lower ring 71 that is at least a part of the members constituting the exhaust duct 70 are reduced. become.
The lower ring 71 does not become an obstacle to the substrate loading / unloading path through which the substrate 2 is loaded / unloaded due to the reduction in the height and volume of the lower ring 71 that is at least a part of the members constituting the exhaust duct 70. Accordingly, the substrate 2 is smoothly carried out of the reaction vessel 45 by the substrate transfer mechanism (not shown) through the substrate transfer port 10 opened in the side wall of the lower vessel 47.

The reactive gas is introduced from the supply port 13 when the substrate is processed at the substrate processing position. Oxidants such as O radicals, H ₂ O, and O ₃ are supplied from the upper opening 4, and source gas Ru (EtCp) ₂ is supplied from the side opening 3 alternately. The introduced gas passes through the dispersion plate 17 and the shower head 16 and is uniformly supplied into the substrate surface.
The gas supplied to the substrate 2 flows into the exhaust duct 70 from the discharge port 26 provided in the conductance plate 29. The gas flowing into the exhaust duct 70 from the discharge port 26 passes through the gas flow path region B formed by the outer lower ring 72, the inner lower ring 73 and the conductance plate 29, and is placed on the exhaust side of the inner lower ring 73. The air is exhausted from the opening 73c.

As described above, according to the present embodiment, the exhaust duct 70 has a two-tank structure, and the inner lower ring 73 is provided so as to be relatively movable with respect to the outer lower ring 72. When the outer lower ring 72 and the inner lower ring 73, which are at least part of the members constituting the exhaust duct 70, rise, the inner lower ring 73 moves relative to the outer lower ring 72. When the relative movement of the inner lower ring 73 is opposite to the movement direction of the outer lower ring 72, at least a part of the inner lower ring 73 accommodated in the recess 76 of the outer lower ring 72 is separated from the outer lower ring 72. As a result, the height and volume of the exhaust duct 70 increase. Therefore, the amount of gas discharged by the exhaust duct 70 increases, and uniform supply of gas, uniform exhaust, and high-speed gas replacement can be achieved in the small-volume processing chamber. As a result, high throughput can be obtained and yield can be improved.
In the embodiment, since the inner lower ring 73 hangs down from the outer lower ring 72 by its own weight during substrate processing, the flow path cross-sectional area of the recess 75 of the exhaust duct 70 is enlarged. As a result, the exhaust resistance of the gas flow path region B in FIG. 1 can be greatly reduced as compared with the exhaust resistance of the gas flow path region A in FIG. 5, and accordingly, the exhaust resistance provided on the conductance plate 29 is reduced. The total conductance of the outlet 26 can be increased.
Thus, since the conductance of the exhaust duct 70 can be made sufficiently large, even if the exhaust duct 70 is configured to collect and exhaust the gas discharged from the plurality of discharge ports 26 to the opening 73c, Uniformity of the gas supply in the substrate surface can be ensured. Further, since the total conductance of the discharge port 26 can be increased, high-speed gas exhaust can be realized, and high-speed gas replacement can be realized.

For example, if the cross-sectional area of the exhaust duct 35 having a single tank structure shown in FIG. 5 is about 5 to 10 cm ² during substrate processing, the exhaust duct 70 of the embodiment has about 2.0 to 2. The channel cross-sectional area can be about 5 times, that is, about 10 to 25 cm ² . In addition, when the discharge port 26 provided in the conductance plate 29 in one aspect of the basic configuration is, for example, circular, the diameter φ is, for example, less than 3 mm, and the number is, for example, about 60, but the conductance plate 29 in the present embodiment. For example, the number of the discharge ports 26 provided in the can be 3 to 6 mm, and the number of the discharge ports 26 is about 20 to 60, for example. In this case, the range of the central angle of the arc-shaped opening 73c shown in FIG. 4 is exemplified by θ = 30 to 180 °, and preferably about 60 °. When the central angle θ is 30 to 180 °, sufficient high-speed gas exhaust is easily obtained. If it is about 60 °, it is possible to suppress the spread of the exhaust gas to the exhaust space in the lower portion 1b of the processing chamber while enabling sufficient high speed gas exhaust.
As a result, in the present embodiment, it is possible to replace the gas concentration in the processing chamber 1 with about 1/1000 within <2.0 sec while ensuring the uniformity of the gas supply in the substrate surface.

  By the way, when the height and volume of the exhaust duct 70 are increased in this way, in particular, when the susceptor 60 is lowered, the problem that the exhaust duct 70 interferes with loading / unloading of the substrate 2 or the exhaust duct 70 A problem arises in that the volume of the processing chamber 1 must be increased by an amount corresponding to the increase in the height and volume of the exhaust duct 70 so as not to obstruct the loading and unloading of the substrate 2. When the lower ring 72 and the inner lower ring 73 are lowered, at least a part of the inner lower ring 73 that is not accommodated in the recess 76 of the outer lower ring 72 (that protrudes from the outer lower ring 72) is the outer lower ring 72. In the recess 76. As a result, when the susceptor 60 is lowered, the height and volume of the exhaust duct 70 are reduced, so that the substrate 2 can be prevented from being carried in and out, and the processing chamber 1 can be prevented from being enlarged.

  Further, according to the present embodiment, since the exhaust duct 70 is used as the exhaust gas flow path, the reaction product does not accumulate on the inner wall of the processing chamber lower portion 1b, the back surface of the susceptor 60, or the like. The reaction product accumulates mainly in the exhaust duct 70, and the exhaust duct 70 is made of quartz that can withstand high temperatures. Therefore, the reaction product deposited in the exhaust duct 70 increases the etching rate. Even in the case of a high dielectric film that is difficult to perform, cleaning with a high-temperature fluorine-based gas can be performed. Therefore, the problem of cleaning the exhaust gas flow path can be solved.

  Further, according to the present embodiment, the exhaust duct 70 for exhausting the gas supplied into the processing chamber 1 is provided around the susceptor 60, so that the gas supplied into the processing chamber 1 is surrounded by the susceptor 60. Then, the air is exhausted to the exhaust port 5 through the exhaust duct 70. Accordingly, it is possible to prevent the gas from flowing downward from the susceptor 60.

  Further, at least a part of the members constituting the exhaust duct 70 is configured to be movable up and down, and the lower ring 71 that is a part of the exhaust duct 70 is also raised during the substrate processing for raising the susceptor 60, so that the processing chamber 1 can be reduced in volume, and the gas contact area and gas flow path volume can be reduced.

  In addition, although the radial flow type using the shower head 16 was demonstrated as the supply port 13 which supplies gas in embodiment, this invention is not limited to this. For example, the present invention may be applied to a one-way flow type in which a gas is directly flowed on the substrate 2 in one direction from the side of the substrate 2 without interposing the shower head 16.

Hereinafter, preferred embodiments of the present invention will be additionally described.
A first aspect includes a processing chamber for processing a substrate, a holder provided in the processing chamber so as to be movable up and down, and holding a substrate, and a supply port provided above the holder and supplying gas into the processing chamber An exhaust duct provided around the holder for exhausting the gas supplied into the processing chamber, and a gas exhausted by the exhaust duct provided below the upper surface of the exhaust duct during substrate processing. A member (conductance plate, lower ring) constituting the exhaust duct is configured to be movable up and down, and the member configured to be movable up and down. The (lower ring) has a first concave member (outer lower ring) and a relative displacement with respect to the first concave member, at least a part of which is accommodated in the concave portion of the first concave member. Second concave member which is capable provided composed of (inner Lower ring).

  In the above-described configuration, when the substrate is carried into the processing chamber, the substrate carried into the processing chamber is placed on the holder by raising the holder. When raising the holder, the first concave member and the second concave member, which are at least part of the members constituting the exhaust duct, rise. At this time, since the second concave member moves relative to the first concave member, at least a part of the second concave member comes out of the concave portion of the first concave member. Increases thickness and volume. While the gas is supplied to the substrate placed on the holder, the substrate is processed by being discharged by an exhaust duct provided around the holder. The gas discharged by the exhaust duct is exhausted out of the processing chamber from an exhaust port provided below the upper surface of the exhaust duct. After the substrate processing, the processed substrate is brought into a state where it can be unloaded by lowering the holder. When the holder is lowered, the first concave member and the second concave member, which are at least part of the members constituting the exhaust duct, are lowered. At this time, since the second concave member moves relative to the first concave member, at least a part of the second concave member is accommodated in the concave portion of the first concave member. Thus, the height and volume of the exhaust duct is reduced. The processed substrate is unloaded from the processing chamber.

  Therefore, according to this aspect, at least a part of the members constituting the exhaust duct is configured to be movable up and down, and at least a part of the second concave member is placed in the concave portion of the first concave member configured to be movable up and down. A simple structure in which the second concave member is provided relative to the first concave member so as to be movable relative to the first concave member without increasing the height and volume of the exhaust duct during loading / unloading of the substrate. Since the height and volume of the exhaust duct can be increased, it is possible to reliably realize the uniformity of gas supply and high-speed exhaust of residual gas while eliminating the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

  The second aspect includes a step of loading a substrate into the processing chamber, a step of placing the substrate loaded into the processing chamber by raising the holder provided in the processing chamber, and the step of While supplying gas to the substrate placed on the holder, the gas is discharged by an exhaust duct provided around the holder, and the gas discharged by the exhaust duct is more than the upper surface of the exhaust duct. A step of processing the substrate by exhausting it out of the processing chamber from an exhaust port provided below, a step of bringing the processed substrate into a state where it can be unloaded by lowering the holder, and a substrate after processing And in the step of raising or lowering the holding tool, at least a part of the member constituting the exhaust duct is raised or lowered together with the holding tool. The member that rises or descends together with the holder is composed of a first concave member and a second concave member that is at least partially housed in the recess of the first concave member, and raises or lowers the holder. In the manufacturing method of the semiconductor device, the second concave member moves relative to the first concave member.

  At least a part of the member constituting the exhaust duct is movable up and down, and at least a part of the second concave member is accommodated in the concave portion of the first concave member constituting the member capable of moving up and down, and the first concave member The height and volume of the exhaust duct can be increased during substrate processing without increasing the height and volume of the exhaust duct when loading and unloading the substrate. As a result, it is possible to reliably achieve uniform gas supply and high-speed exhaust of residual gas, while eliminating problems of exhaust gas flow path cleaning and substrate transfer obstruction.

In a first aspect, the third aspect is configured such that the first concave member moves up and down together with the holder.
If comprised in this way, if a holder is raised / lowered, since a 1st concave member will also raise / lower with it, it is not necessary to raise / lower a 1st concave member separately separately, and it is exhaust gas by simple structure. The gas supply uniformity and the residual gas high-speed exhaust can be more reliably realized while solving the problems of the cleaning of the flow path and the substrate transfer obstacle.

According to a fourth aspect, in the first aspect, the first concave member is supported by a holder and is moved up and down together with the holder.
If comprised in this way, if a holder is raised / lowered, since a 1st concave member will also raise / lower with it, it is not necessary to raise / lower a 1st concave member separately separately, but a 1st concave member Elevating means for elevating and lowering is no longer necessary, and with a simple structure, it is possible to more reliably realize gas supply uniformity and high-speed exhaust of residual gas while solving the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a fifth aspect, in the first aspect, the first concave member is supported by a holder, and the second concave member is provided so as to be supported by the first concave member.
According to this, since the second concave member is provided so as to be supported by the first concave member, no new support means other than the first concave member is required for the second concave member. Even though the structure is simple, it is possible to more reliably realize gas supply uniformity and high-speed exhaust of residual gas while solving problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a sixth aspect, in the first aspect, the bottom of the concave portion of the first concave member is provided with an opening through which the second concave member can be inserted, and the second concave member is The first concave member is provided so as to be supported.
The exhaust gas flow path has a simple structure in which the second concave member is inserted into the opening provided at the bottom of the concave portion of the first concave member so that the second concave member can be supported by the first concave member. The gas supply uniformity and the residual gas high-speed exhaust can be more surely realized while solving the problems of the cleaning and the substrate transfer trouble.

According to a seventh aspect, in the first aspect, an opening for flowing gas from the concave portion to the exhaust port is provided on the exhaust port side of the bottom of the concave portion of the second concave member.
With a simple structure in which an opening is provided on the exhaust port side at the bottom of the concave portion of the second concave member, the gas can be circulated from the concave portion to the exhaust port. While eliminating this, it is possible to more reliably achieve gas supply uniformity and residual gas high-speed exhaust.

According to an eighth aspect, in the first aspect, at least a part (conductance plate) of the members (conductance plate, lower ring) constituting the exhaust duct is disposed in the vicinity of the substrate processing position in the processing chamber. It is sometimes configured to close the concave portion of the first concave member (outer lower ring).
At least a part of the member constituting the exhaust duct arranged in the vicinity of the substrate processing position closes the concave portion of the first concave member during substrate processing, so that an exhaust duct for exhausting the gas supplied into the processing chamber is formed. Thus, it is possible to more reliably realize gas supply uniformity and high-speed exhaust of residual gas while eliminating problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a ninth aspect, in the first aspect, at least another part of the member constituting the exhaust duct is a plate that closes the concave portion of the first concave member during the substrate processing, and gas is supplied to the plate in the processing. An opening for flowing from the room into the recess is provided.
Since an opening is provided in the plate that closes the concave portion of the first concave member, the gas supplied into the processing chamber can be circulated from the opening into the concave portion. While eliminating this, it is possible to more reliably achieve gas supply uniformity and residual gas high-speed exhaust.

According to a tenth aspect, in the first aspect, the controller further includes a controller for controlling two or more kinds of reaction gases to be alternately supplied a plurality of times with the supply of the purge gas between them.
In the case of performing cyclic processing in which two or more kinds of reaction gases are alternately supplied multiple times with the supply of the purge gas in between, the height and volume of the exhaust duct can be increased during the substrate processing. It is possible to more reliably realize gas supply uniformity and high-speed residual gas exhaust while eliminating the problems of path cleaning and substrate transfer obstacles.

In an eleventh aspect, in the second aspect, in the substrate processing step, two or more kinds of reaction gases are alternately supplied to the substrate a plurality of times with a supply of purge gas in between.
When performing such a sequential process, a high purge efficiency is required. However, even when such a process is performed, it is possible to prevent gas from flowing into the lower part of the processing chamber below the holder, and to make contact. Since the gas area and the gas flow path volume can be made as small as possible, it is possible to more reliably realize gas supply uniformity and high-speed residual gas exhaust while eliminating the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

In a twelfth aspect according to the second aspect, the substrate processing step includes a step of adsorbing at least one kind of reaction gas on the substrate, and supplying a different reaction gas to the adsorbed reaction gas. Producing a membrane reaction.
When performing such a sequential process, a high purge efficiency is required. However, even when such a process is performed, it is possible to prevent gas from flowing into the lower part of the processing chamber below the holder, and to make contact. Since the gas area and the gas flow path volume can be reduced as much as possible, the reaction gas can be supplied and the residual gas can be purged in a short time.
In particular, in the case of ALD, a film may be deposited over the entire area where the raw material in the processing chamber is adsorbed, which causes generation of particles. Therefore, it is necessary to reduce the gas contact area of the raw material gas as much as possible. At the same time, in order to shorten the replacement time of two or more kinds of source gases, it is necessary to reduce the channel volume of source gases as much as possible, but these can also be solved.
Therefore, it is possible to more reliably realize the uniformity of gas supply and high-speed exhaust of residual gas while solving the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a thirteenth aspect, in the second aspect, the substrate processing step includes a step of supplying the first reactive gas to the substrate and adsorbing the substrate on the substrate, a step of purging thereafter, and an adsorption on the substrate thereafter. The step of supplying the second reaction gas to the first reaction gas thus caused to cause the film formation reaction and the step of purging thereafter are repeated a plurality of times.
When performing such a sequential process, a high purge efficiency is required. However, even when such a process is performed, it is possible to prevent gas from flowing into the lower part of the processing chamber below the holder, and to make contact. Since the gas area and the gas flow path volume can be reduced as much as possible, the reaction gas can be supplied and the residual gas can be purged in a short time.
In particular, in the case of ALD, a film may be deposited over the entire area where the raw material in the processing chamber is adsorbed, which causes generation of particles. Therefore, it is necessary to reduce the gas contact area of the raw material gas as much as possible. At the same time, in order to shorten the replacement time of two or more kinds of source gases, it is necessary to reduce the channel volume of source gases as much as possible, but these can also be solved.
Therefore, it is possible to more reliably realize the uniformity of gas supply and high-speed exhaust of residual gas while solving the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a fourteenth aspect, in the second aspect, the substrate processing step is different from the step of depositing a thin film on the substrate by decomposing at least one kind of reactive gas and the reactive gas with respect to the deposited thin film. Supplying a reaction gas to modify the thin film.
When performing such a sequential process, a high purge efficiency is required. However, even when such a process is performed, it is possible to prevent gas from flowing into the lower part of the processing chamber below the holder, and to make contact. Since the gas area and the gas flow path volume can be reduced as much as possible, the reaction gas can be supplied and the residual gas can be purged in a short time.
Therefore, it is possible to more reliably realize the uniformity of gas supply and high-speed exhaust of residual gas while solving the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

According to a fifteenth aspect, in the second aspect, the substrate processing step includes a step of supplying a first reaction gas to the substrate to deposit a thin film on the substrate, a step of purging thereafter, The step of supplying the second reactive gas to the thin film deposited on the thin film to modify the thin film and the step of purging thereafter are repeated a plurality of times.
When performing such a sequential process, a high purge efficiency is required. However, even when such a process is performed, it is possible to prevent gas from flowing into the lower part of the processing chamber below the holder, and to make contact. Since the gas area and the gas flow path volume can be reduced as much as possible, the reaction gas can be supplied and the residual gas can be purged in a short time.
Therefore, it is possible to more reliably realize the uniformity of gas supply and high-speed exhaust of residual gas while solving the problems of exhaust gas flow path cleaning and substrate transfer obstruction.

It is a vertical sectional view at the time of film formation for explaining a substrate processing apparatus in one embodiment of the present invention. It is a vertical sectional view at the time of substrate carrying in / out for explaining a substrate processing apparatus in one embodiment of the present invention. It is explanatory drawing of the outer lower ring in one embodiment of this invention, (a) is a top view, (b) is a bb sectional view taken on the line. It is explanatory drawing of the inner lower ring in one embodiment of this invention, (a) is a top view, (b) is a bb sectional view taken on the line. It is a vertical sectional view at the time of film formation for explaining a substrate processing apparatus in a basic configuration of the present invention. It is a vertical sectional view at the time of substrate loading / unloading for explaining a substrate processing apparatus in a basic configuration of the present invention.

Explanation of symbols

1 Processing chamber 2 Substrate 5 Exhaust port 13 Supply port 29 Conductance plate 60 Susceptor (holder)
70 Exhaust duct 71 Lower ring 72 Outer lower ring (first concave member)
73 Inner lower ring (second concave member)
76 Recess 160 Holding tool

Claims (2)

A processing chamber for processing the substrate;
A holder that is provided so as to be movable up and down in the processing chamber and holds the substrate;
A supply port that is provided above the holder and supplies gas into the processing chamber;
An exhaust duct provided around the holder for exhausting the gas supplied into the processing chamber;
An exhaust port that is provided below the upper surface of the exhaust duct during substrate processing and exhausts the gas exhausted by the exhaust duct to the outside of the processing chamber;
At least a part of the members constituting the exhaust duct is configured to be movable up and down, and at least a part of the members configured to be movable up and down is accommodated in the first concave member and the concave portion of the first concave member. A substrate processing apparatus comprising a second concave member provided to be movable relative to the first concave member. Carrying a substrate into the processing chamber;
Placing the substrate carried into the processing chamber on the holder by raising the holder provided in the processing chamber;
While supplying the gas to the substrate placed on the holder, the gas is discharged by an exhaust duct provided around the holder, and the gas discharged by the exhaust duct is discharged from the upper surface of the exhaust duct. A step of processing the substrate by exhausting out of the processing chamber from an exhaust port provided below,
A step of bringing the processed substrate into a state capable of being unloaded by lowering the holder;
And a step of unloading the processed substrate from the processing chamber,
In the step of raising or lowering the holder, at least a part of the member constituting the exhaust duct is raised or lowered together with the holder, and the member raised or lowered together with the holder is the first concave member, The second concave member is constituted by a second concave member that is at least partially accommodated in the concave portion of the first concave member, and when the holder is raised or lowered, the second concave member becomes the first concave member. A method of manufacturing a semiconductor device that moves relative to the semiconductor device.

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