KR20090111938A - Lead frame for led package with plenty of diode chips and the led package thereof - Google Patents

Abstract

PURPOSE: A lead frame for the high power light-emitting diode package capable of arranging the diode chips and a high power light-emitting diode package using the same are provided to enhance the reliability of products by exposing the portion of the lead frame adjacent to the substrate. CONSTITUTION: A lead frame for the high power light-emitting diode package capable of arranging the diode chips includes chip connection terminals(14,15,16), dissimilar chip connection terminals(34,35,36), and medium present terminals(21,22,23). The medium terminal has the constant area which is electrically independent from the chip connection terminal between the chip connection terminal and another chip connection terminal. The medium terminal includes the insulation part and the heat transfer part. The heat transfer part is formed for the heat dissipation and is closely located with the substrate.

Description

LEAD FRAME FOR LED PACKAGE WITH PLENTY OF DIODE CHIPS AND THE LED PACKAGE THEREOF}

The present invention relates to a lead frame for a high power light emitting diode package capable of arranging a plurality of diode chips and a high power light emitting diode package using the same, and more particularly, to a plurality of intermediary terminals between chip connection terminals for mounting a diode chip. For high power light emitting diode package that can form a large number of diode chips that can be easily mounted by increasing the spacing between the diode chips to be mounted. A lead frame and a high power light emitting diode package using the same.

Light Emitting Diode (LED) is a semiconductor material that emits light of various colors when an electric current is applied, and it has a long life, low power, excellent initial driving characteristics, high vibration resistance, and high tolerance for repetitive power interruption. Due to its many advantages, the demand is continuously increasing, and recently, it has been adopted as a backlight device for a lighting device and a large liquid crystal display (LCD).

As such light emitting diodes require a large output, a package structure having excellent heat dissipation performance is required.

In general, a high output light emitting diode is formed by molding a molding material made of a thermally conductive plastic on a panel on which a lead frame is formed. The molding material is divided into upper and lower parts and molded in such a manner that the upper and lower parts of the panel are pressed by high temperature and high pressure to form a main body. An opening is formed in the upper center of the molding material and serves as a reflector of the diode chip on the inner side of the opening. A reflective surface in the form of an inclined surface is formed.

On the other hand, after the molding material is molded in the panel as described above, a diode chip is mounted on the chip connection terminal, and after the diode chip is mounted, the wire is connected to be electrically connected to another chip connection terminal (common terminal).

As described above, the diode chip is mounted on the chip connection terminal and the wire is connected to the common terminal to be electrically connected. Then, the light emitting lens is fixed to the reflective surface on the upper part of the molding material, or a molding material such as transparent epoxy or silicon is used. After filling, each light emitting diode package unit is cut out from the panel, and after being taken out, the power connector is bent appropriately so as to be inserted into the main board to complete the high power light emitting diode package.

However, in order to implement three to seven colors or more with a polychromatic light emitting diode, two or three or more diode chips must be provided, and a configuration capable of turning on and off each diode chip is essential. to be. However, in the conventional light emitting diode package as described above, even if a red, green, and blue diode chip for emitting light of different wavelengths is mounted, power input from an external source is applied to each diode chip. It is a structure that can only be supplied at the same time. Therefore, such a conventional LED package has a problem in that the multi-color light emission can be realized while the power supply of each LED is individually turned on and off, and there is a limit in the number of diode chips to be mounted.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a lead frame for a high output light emitting diode package that can be easily mounted a plurality of diode chips to implement a multicolor light emitting diode. In other words, by forming a plurality of intermediary terminals between the chip connection terminals for mounting the diode chip, not only to secure an area for mounting a plurality of diode chips, but also to easily mount the diode chip by extending the gap between the diode chips. The present invention provides a lead frame for a high power light emitting diode package capable of arranging a plurality of diode chips, and a high power light emitting diode package using the same.

In addition, the present invention exposes the rear surface of the intermediate terminal or a portion of the lead frame adjacent to the substrate to the bottom side to serve as a heat dissipation path as well as the electrical terminal, a plurality of diodes that can improve the reliability of the product The present invention provides a lead frame for a high power light emitting diode package capable of arranging a chip, and a high power light emitting diode package using the same.

The present invention provides a lead frame for a high power light emitting diode package including a plurality of power supply terminals mounted on a substrate and supplied with power, and a plurality of chip connection terminals on which a diode chip is mounted, wherein the chip connection terminals (14, 15) And the intermediate terminals 21 and 22, which are electrically independent of the chip connection terminals 14, 15, 16, 34, 35, and 36 and have a predetermined area between the 16 and other chip connection terminals 34, 35 and 36. , 23) characterized in that it further comprises.

In this case, the intermediate terminal, the portion adjacent to the chip connection terminals 14, 15, 16, 34, 35, 36 are etched (etched) to the chip connection terminals 14, 15, 16, 34, 35, Insulating portion 52 formed of an insulator so as to be electrically independent from 36, and a heat transfer portion 54 for heat dissipation is formed in close proximity to the substrate.

On the other hand, the present invention is configured to mount at least one diode chip to at least one chip connection terminal formed in the lead frame for the high power light emitting diode package, and to supply power to the diode chip through the intermediate terminal using a wire. It is characterized by.

As described above, according to the present invention, since the intermediate terminal can be formed between the chip connection terminals only by the etching or pressing process without inserting additional parts or components, the material cost and the process cost can be reduced. By forming a plurality of terminals, not only an area for mounting a plurality of diode chips can be secured, but also a diode chip can be easily mounted by extending a gap between the diode chips, thereby making it possible to implement a multicolor light emitting diode more easily.

In addition, the present invention exposes the rear surface of the intermediate terminal or a portion of the lead frame to the bottom side to be adjacent to the substrate to serve as a heat dissipation path as well as the electrical terminal to improve the performance of the product.

Hereinafter, a lead frame for a high power light emitting diode package capable of arranging a plurality of diode chips according to the present invention and a high power light emitting diode package using the same will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of a state in which a diode chip is not mounted in a high output light emitting diode package in which a plurality of diode chips may be disposed, and FIG. 2A is a cross-sectional view of the AA line of FIG. 2b is a cross-sectional view of the CC line of Figure 1, Figure 2c is a side view of Figure 1, Figure 2d is a cross-sectional view of the line BB of Figure 2c, Figure 2e is a plurality of diode chips according to an embodiment of the present invention 3A to 3F are high power light emitting diode packages and cross-sectional configuration diagrams in which a plurality of diode chips according to another embodiment of the present invention may be disposed, and FIGS. 4A to 3F. 4F is a cross-sectional view of a high power light emitting diode package in which a plurality of diode chips can be arranged according to still another embodiment of the present invention, and FIGS. 5A to 5D are according to the present invention. FIG. 6 is a view illustrating a state in which a diode chip is mounted in a high power light emitting diode package capable of arranging two diode chips. FIG. 6 is a lead frame for a high power light emitting diode package in which a plurality of diode chips may be arranged according to an embodiment of the present invention. .

In adding reference numerals to the components of the drawings, the same components, even if displayed on the other drawings to have the same reference numerals as possible, it is known that it may unnecessarily obscure the subject matter of the present invention Detailed description of functions and configurations will be omitted.

In the lead frame for a high output light emitting diode package capable of arranging a plurality of diode chips according to an exemplary embodiment of the present invention, as shown in FIG. 6, a plurality of lead frame modules capable of manufacturing one high output light emitting diode package are provided. It is formed in the panel 10 is formed.

As shown in FIGS. 1 to 4F, the lead frame module includes a plurality of power connection terminals 11, 12, 13, 31, 32, and 33, and a diode chip 60 that are externally supplied with power. A plurality of chip connection terminals 14, 15, 16, 34, 35, and 36 to be mounted, and an intermediate terminal 21 having a predetermined area between the chip connection terminals 14, 15, 16, 34, 35, and 36. , 22, 23).

2A is a cross-sectional view of the A-A line of FIG. 1, FIG. 2B is a cross-sectional view of the C-C line of FIG. 1, and FIG. 2D is a cross-sectional view of the B-B line of FIG. 2C.

The intermediate terminals 21, 22, and 23 are positioned independently of the chip connection terminals 14, 15, 16, 34, 35, and 36, as shown in FIG. 2D, and are formed of an insulator such as a synthetic resin material. It is partitioned by the insulating part 52 which becomes. That is, as shown in FIG. 2A, between the chip connection terminals 14, 15, and 16 and the other chip connection terminals 34, 34, 35, and 36 are horizontally connected to each other based on the drawing. 22 and 23, and an insulator 52 is formed to insulate the chip connection terminals 14, 15, 16, 34, 35, and 36, respectively. In this case, as shown in FIG. 2B, the insulating part 52 is formed to widen or narrow the gap between the chip connection terminals 14, 15, 16, 34, 35, and 36, and the insulating part 52 Can be easily formed by etching on the panel 10.

In addition, the horizontal intermediate terminals 21, 22, and 23 formed as described above are cut and processed by pressing or the like on the panel 10, and after the main body 40 is molded, they are cut from the panel 10. The chip connection terminals 14, 15, 16, 34, 35, and 36 and the power connection terminals 11, 12, 13, 31, 32, and 33 are electrically independent of each other.

The power connection terminals 11, 12, 13, 31, 32, and 33 and the chip connection terminals 14, 15, 16, 34, 35, and 36 form a main body 40 by molding of a synthetic resin material. A reflective surface 42 is formed on the inner surface of the main body 40 adjacent to the terminals 14, 15, 16, 34, 35, and 36, and the filling portion 44 formed of the reflective surface 42 is made of a transparent material. The filling is performed to protect the diode chip 60 mounted on the chip connection terminals 14, 15, 16, 34, 35, and 36.

The molding material of the main body 40 may be formed of thermal conductive plastics or high thermal conductive ceramics. The thermally conductive plastics include ABS (Acrylonitrile Butadiene Styrene), Liquid Crystalline Polymer (LCP), Polyamide (PA), Polyphenylene Sulfide (PPS), Thermoplastic Elastomer (TPE), and the like. There are silicon (SiC) and aluminum nitride (AlN). Among the high thermally conductive ceramics, aluminum nitride (AlN) has the same physical properties as alumina and is widely used because it is superior to alumina in thermal conductivity.

The diode chip 60 is electrically connected to the chip connection terminals 14, 15, 16, 34, 35, and 36 through a gold wire to receive power.

3A to 3F are cross-sectional views of a high output light emitting diode package and a cross-sectional configuration in which a plurality of diode chips can be arranged according to another embodiment of the present invention. FIG. 3B is a cross-sectional view of the DD line of FIG. 3A. 3A is a cross-sectional configuration diagram of the FF line of FIG. 3A, and FIG. 3E is a cross-sectional configuration diagram of the EE line of FIG. 3D.

According to another embodiment of the present invention, as shown in FIGS. 3B, 3C, and 3F, a plurality of heat transfer parts 54 are formed on the bottom surface.

That is, the heat transfer part 54 is formed on the panel 10 by etching or the like, and the chip connection terminals 14, 15, 16, 34, 35, and 36 are formed on the formed heat transfer part 54 by an insulator of synthetic resin material. Insulation portion 52 is formed so as to be electrically insulated from.

In addition, according to another embodiment of the present invention, as shown in Figures 4a to 4f, a plurality of heat transfer portion 54 is formed on the bottom. The difference from other embodiments is that the heat transfer part 54 is formed on the bottom of the intermediate terminal 22 as shown in Figs. 4b, 4c and 4f.

As described above, a plurality of diode chips 60 are mounted on the lead frame in which the main body 40 is molded, and the required chip connection terminals 14, 15, 16, 34, 35, and 36 are mounted as shown in FIGS. 5A through 5D. Is electrically connected to each other using a wire 62.

5A illustrates a case in which one diode chip 60 is mounted, and the wire 62 is connected to the chip connection terminals 15 and 35 after the chip is mounted on the intermediate terminal 22. In this case, the diode chip 60 may be directly mounted on the chip connection terminals 15 and 35.

5B illustrates a case in which three diode chips 60 are mounted, the diode chips 60 are disposed at equal intervals on the chip connection terminals 15, 34, and 36, and on one diode chip 60. The wire 62 is connected to the chip connection terminal 14 and the intermediate terminal 21, the chip connection terminal 35 and the intermediate terminal 22, the chip connection terminal 16 and the intermediate terminal so that the wire 62 can be connected up and down based on the drawings. It is connected to the diode chip 60 through 23 respectively.

In addition, the power connection terminals 11, 12, 13 and the power connection terminals 31, 32, and 33 are connected to each other with the same polarity, so that the diode chip 60 can be more easily controlled.

5C is a configuration in which six diode chips 60 are mounted, and FIG. 5D is a configuration in which 18 diode chips 60 are mounted.

5C and 5D, the power connection terminals 11, 12, and 13 and the power connection terminals 31, 32, and 33 are connected with the same polarity to each other to more easily control the operation of the diode chip 60. And, it is possible to effectively heat dissipation through the heat transfer portion 54 formed on the bottom of the chip connection terminals 14, 15, 16, 34, 35, 36 and the intermediate terminals (21, 22, 23).

 The embodiments of the present invention described above and illustrated in the drawings should not be construed as limiting the technical spirit of the present invention. The protection scope of the present invention is limited only by the matters described in the claims, and those skilled in the art can change and change the technical idea of the present invention in various forms. Therefore, such improvements and modifications will fall within the protection scope of the present invention if it is obvious to those skilled in the art.

1 is a plan view of a state in which a diode chip is not mounted in a high output light emitting diode package capable of arranging a plurality of diode chips according to an embodiment of the present invention;

Figure 2a is a cross-sectional view of the line A-A of Figure 1,

2B is a cross-sectional view of the C-C line of FIG.

2C is a side view of FIG. 1;

Figure 2d is a cross-sectional view of the line B-B of Figure 2c,

2E is a bottom view of a high power light emitting diode package capable of arranging a plurality of diode chips according to an embodiment of the present invention;

3A to 3F are a high power light emitting diode package and a cross-sectional configuration diagram in which a plurality of diode chips can be arranged according to another embodiment of the present invention;

4A to 4F are cross-sectional views of a high power light emitting diode package capable of arranging a plurality of diode chips according to another embodiment of the present invention;

5A to 5D are diagrams illustrating a state in which a diode chip is mounted in a high power light emitting diode package capable of arranging a plurality of diode chips according to the present invention;

6 is a lead frame for a high power light emitting diode package in which a plurality of diode chips can be arranged according to an embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

11, 12, 13, 31, 32, 33: power connector

14, 15, 16, 34, 35, 36: chip connector

10: panel 21, 22, 23: intermediate terminal

40: main body 42: reflecting surface

44: filling part 52: insulating part

54: heat transfer part 60: diode chip

62: wire

Claims (3)

In the lead frame for a high power light emitting diode package comprising a plurality of power connection terminals mounted on a substrate and supplied with power, and a plurality of chip connection terminals on which a diode chip is mounted, Between the chip connection terminals 14, 15 and 16 and the other chip connection terminals 34, 35 and 36, the chip connection terminals 14, 15, 16, 34, 35 and 36 are electrically independent and have a predetermined area. A lead frame for a high power light emitting diode package, in which a plurality of diode chips can be arranged, characterized in that it further comprises intermediate terminals (21, 22, 23) having. The method of claim 1, The intermediate terminal may be etched by a portion adjacent to the chip connection terminals 14, 15, 16, 34, 35, and 36 so that the chip connection terminals 14, 15, 16, 34, 35, and 36 may be etched. A high output light emitting diode capable of arranging a plurality of diode chips, characterized in that the insulator 52 is formed of an insulator so as to be electrically independent from the substrate, and the heat transfer part 54 is disposed in close contact with the substrate. Lead frame for package. Mounting at least one diode chip in at least one chip connection terminal formed in the lead frame for the high power light emitting diode package of claim 1 or 2, and supplying power through the intermediate terminal using a wire to the diode chip. A high output light emitting diode package using a lead frame for a high output light emitting diode package, characterized in that the configuration.

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