KR101186644B1 - Led package mounting a led having an array of light emitting cells coupled in series - Google Patents

Abstract

A light emitting diode package equipped with a light emitting diode chip having a light emitting cell array connected in series is provided. This package includes a heatsink support ring. The heat sink is inserted into the support ring. At least two connection leads are disposed on both sides of the support ring, spaced apart from the support ring and the heat sink. The package body is attached to and supports the heat sink and connecting leads. The package body has an opening that exposes a portion of each of the connecting leads and the top surface of the heat sink. A light emitting diode chip having a light emitting cell array connected in series on the heat sink is mounted. The light emitting diode chip is electrically connected to the connection leads through a bonding wire. Accordingly, the light emitting diode package can be driven using an AC power source, and a heat sink can be used to provide a light emitting diode package having high heat dissipation efficiency.

Light emitting diode package, light emitting diode chip, lead frame, heat sink, package body, light emitting cell, flip chip

Description

LED package with LED chip with LED cell array connected in series {LED PACKAGE MOUNTING A LED HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES}

1 is a perspective view illustrating a lead frame for manufacturing a light emitting diode package according to an embodiment of the present invention.

2 is a process flowchart illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

3 to 10 are perspective views illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention according to the process flow chart of FIG.

11 and 12 are a perspective view and a plan view for explaining a light emitting diode package according to another embodiment of the present invention, respectively.

FIG. 13 is a cross-sectional view of a light emitting diode chip and a lens mounted on the light emitting diode package of FIG. 11 to describe a light emitting diode package according to another exemplary embodiment of the present invention.

14 and 15 are plan views illustrating lead frames used in a light emitting diode package according to another embodiment of the present invention, respectively.

16A and 16B are circuit diagrams for describing a light emitting diode chip mounted in a light emitting diode package of the present invention.

17A and 17B are cross-sectional views illustrating a light emitting diode chip according to an embodiment of the present invention.

18A and 18C are cross-sectional views illustrating a light emitting diode chip according to another embodiment of the present invention.

The present invention relates to a light emitting diode package equipped with a light emitting diode chip. More particularly, the light emitting diode chip includes a light emitting diode chip having light emitting cells connected in series to be directly connected to an alternating current power source. The present invention relates to a light emitting diode package mounted on top of a sink and having good heat dissipation characteristics.

Recently, the use of light emitting diodes (LEDs) as a light source is increasing. The light output of such light emitting diodes is generally proportional to input power. Therefore, a high light output can be obtained by increasing the power input to the light emitting diode. However, increasing the input power increases the junction temperature of the light emitting diodes. The increase in junction temperature of the light emitting diodes leads to a decrease in photometric efficiency, which indicates the extent to which the input energy is converted into visible light. Therefore, it is required to prevent an increase in the junction temperature of the light emitting diode according to the increase of the input power. Heat sinks can be used in combination with the package body to increase heat dissipation efficiency. However, continuous improvement of the structure of such a heat sink is required, and in particular, a heat sink capable of preventing separation from the package body is required.

On the other hand, the light emitting diode is a semiconductor device formed of a semiconductor p-n junction structure, and emits light by recombination of electrons and holes, generally driven by a current in one direction. Thus, the use of light emitting diodes for general lighting requires an AC-DC converter, which makes it difficult to use the light emitting diodes for general lighting. Therefore, in order to use the light emitting diode for general illumination, a light emitting diode capable of driving using an AC power source without an AC-DC converter is required.

An object of the present invention is to provide a light emitting diode package that can be driven using an AC power source without an AC-DC converter.

Another object of the present invention is to provide a light emitting diode package that adopts a heat sink to increase heat dissipation efficiency and prevent the heat sink from being separated from the package body.

In order to achieve the above technical problem, the present invention provides a light emitting diode package equipped with a light emitting diode chip having light emitting cells connected in series. A light emitting diode package according to an aspect of the present invention includes a heat sink support ring. A heat sink is inserted into the support ring. In addition, at least two connection leads are disposed on both sides of the support ring and spaced apart from the support ring and the heat sink. A package body is attached to and support the heat sink and the connecting leads. The package body has an opening that exposes a portion of each of the connection leads and an upper surface of the heat sink. On the other hand, a light emitting diode chip having a light emitting cell array connected in series is mounted on the heat sink. Bonding wires electrically connect the light emitting diode chip to the connection leads. Accordingly, it is possible to provide a light emitting diode package having high heat dissipation efficiency and which can be driven using an AC power source.

Here, the "light emitting cell" means a fine light emitting diode formed in a single light emitting diode chip. In general, the light emitting diode chip has only one light emitting diode, but in the present invention, the light emitting diode chip has a plurality of light emitting cells. Meanwhile, "connected lead" means lead terminals connected to an external power source.

 A light emitting diode package according to another aspect of the present invention includes a heat sink support ring. On the other hand, the heat sink has a spiral groove on its upper side. The heat sink is inserted into the support ring using the spiral groove. At least two connection leads are arranged on both sides of the support ring. One of the connection leads is connected to the support ring. A package body is attached to and support the heat sink and connecting leads. The package body has an opening that exposes a portion of each of the connection leads and an upper surface of the heat sink. A light emitting diode chip having a light emitting cell array connected in series is mounted on the heat sink. In addition, bonding wires electrically connect the LED chip to the connection leads. Since the heat sink has a spiral groove, the heat sink can be easily inserted into the support ring. In addition, since one of the connection leads is connected to the support ring, a bonding wire for electrically connecting the heat sink and the one connection lead may be omitted.

On the other hand, the light emitting diode chip includes a substrate and light emitting cells electrically insulated from the substrate and spaced apart from each other on the substrate.

In one embodiment of the present invention, the light emitting diode chip may further include wirings for electrically connecting the light emitting cells in series.

In another embodiment of the present invention, a submount may be interposed between the light emitting diode chip and the heat sink. The submount may have electrode patterns corresponding to the light emitting cells, and the light emitting cells may be connected in series by the electrode patterns.

On the other hand, a molding member may cover the upper portion of the light emitting diode chip. The molding member may be located in a groove surrounded by sidewalls of the package body. The molding member may include at least two molding members having different hardness values. In addition, a phosphor may be located on the light emitting diode chip. The molding member may include a first molding member and a second molding member, and phosphors may be contained in the first and / or second molding members. Accordingly, a light emitting diode package emitting white light may be provided using a light emitting diode chip emitting blue light.

On the other hand, a lens may be positioned on the molding member. The lens may have various shapes according to the intended use.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, widths, lengths, thicknesses, and the like of components may be exaggerated for convenience. Like numbers refer to like elements throughout.

 1 is a perspective view illustrating a lead frame 310 used to manufacture a light emitting diode package according to an embodiment of the present invention.

 Referring to FIG. 1, the leadframe 310 has a heat sink support ring 313 into which a heat sink can be inserted. The support ring 313, as shown, may be a circular ring shape, but is not limited to this, it may be a polygonal ring shape.

On the other hand, the outer frame 311 surrounds the support ring 313. The outer frame 311 is spaced apart from the support ring 313. As illustrated, the outer frame 311 may be square, but is not limited thereto, and may be a circular or other polygon.

The outer frame 311 and the support ring 313 are connected by at least one supporting lead 315a and / or 315b. The support lead fixes the support ring 313 to an outer frame. As shown, support leads 315a and 315b are positioned on opposite sides of the support ring 313 to fix the support ring 313 to the outer frame 311. In addition to the support leads 315a and 315b, additional support leads may connect the support ring 313 to the outer frame 311.

In addition, at least two separated leads 317a, 317b, 317c, 319a, 319b, and 319c extend from the outer frame 311 toward the support ring 313. However, the separating leads are spaced apart from the support ring 313. As shown, the separation leads 317a, 317b, 317c, 319a, 319b, and 319c may have a wider end portion near the support ring 313. On the other hand, the separating leads may be disposed on opposite sides of the support ring 313.

Although the number of separation leads is determined by the type and number of LED chips to be mounted and the bonding wire connection method, the lead frame 310 may have a large number of separation leads so as to be used for manufacturing various kinds of packages. . The separation leads may be arranged in a direction orthogonal to the support leads 315a and 315b.

Meanwhile, although six separation leads are shown in FIG. 1, fewer separation leads may be disposed, and additional separation leads may be further disposed.

The lead frame 310 according to an embodiment of the present invention may be manufactured by pressing a phosphor bronze plate made of copper alloy using a die technique. Meanwhile, although one lead frame 310 is shown in FIG. 1, a plurality of lead frames 310 may be manufactured and aligned in one phosphor bronze plate. In particular, a plurality of lead frames 310 manufactured in one phosphor bronze plate are used to mass-produce a light emitting diode package.

2 is a process flowchart illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention, and FIGS. 3 to 10 are perspective views and a plan view illustrating a method of manufacturing a light emitting diode package according to the process flowchart. admit.

Referring to FIG. 2, a lead frame 310 as described with reference to FIG. 1 is prepared (S01). As described above, the lead frame 310 may be manufactured by pressing a phosphor bronze plate, and a plurality of lead frames 310 may be manufactured and aligned in the same phosphor bronze plate.

2 and 3, a heat sink 320 may be prepared, which may be inserted into and fixed to the support ring 313 of the lead frame 310. The heat sink 320 has a top surface on which a light emitting diode chip can be mounted. The upper surface of the heat sink 320 is preferably smaller than the inner diameter of the support ring 313 to be easily inserted into the support ring 313, the outer diameter of the side surface of the heat sink 320 is the support ring 313 It is preferable that it is larger than the inner diameter of.

In addition, the heat sink 320 may have a support ring receiving groove 323a for fastening to the support ring 313. Furthermore, the support ring receiving groove 323a may be provided as a spiral groove to be easily fastened to the support ring 313.

On the other hand, the heat sink 320 may have a base portion 321 and a protrusion 323 protruding upward from the center portion of the base portion. In this case, the support ring receiving groove 323a is located at the side of the protrusion 323. The base 321 and the protrusion 323 may be cylindrical, as shown, but is not limited thereto, and may be polygonal. The protrusion 323 may have a shape similar to the inner shape of the support ring 313, but is not limited thereto. That is, the support ring 313 may have a circular ring shape, and the protrusion 323 may have a rectangular cylindrical shape.

The heat sink 320 may be manufactured using a metal or heat conductive resin having a high thermal conductivity by using a press working technique or a molding technique. In addition, the heat sink 320 is manufactured using a process separate from the lead frame 310. Accordingly, the order of preparing the lead frame 310 (S01) and the preparing of the heat sink 320 (S03) may be reversed, or may be simultaneously performed.

2 and 4, the heat sink 320 is inserted into and fixed to the support ring 313 of the lead frame 310 (S05). Since the outer diameter of the side surface of the heat sink 320 is larger than the inner diameter of the support ring 313, the heat sink 320 may be forcibly inserted into the support ring 313.

On the other hand, when the support ring receiving groove 323a is formed, the support ring 313 is accommodated in the support ring receiving groove 323a to support the heat sink 320. In this case, a portion of the support ring 313 is accommodated in the support ring receiving groove 323a, and the rest of the support ring 323 is preferably protruded out of the protrusion 323. In addition, when the support ring receiving groove 323a is a spiral groove, the heat sink 320 may be rotated to be fastened to the support ring 313.

2 and 5A, after fixing the heat sink 320 to the lead frame 310, the package body 330 is formed using an insert molding technique (S07). The package body 330 may be formed by injection molding a thermosetting or thermoplastic resin.

The package body 330 is formed around the heat sink 320 to support the support ring 313, the support leads 315a and 315b, the separation leads 317a, 317b, 317c, 319a, 319b, and 319c and the heatsink. Support 320. The package body is attached to the heat sink and leads. Some of the support leads and separation leads protrude out of the package body 330. In addition, the package body 330 has an upper end of the heat sink 310 and an opening exposing the leads.

As shown in FIG. 5A, the support ring 313 and the leads are exposed by the opening. As shown in FIG. 5B, the package body 330a covers most of the heat sink 320 except for the upper end portion, and only a portion of the separation leads 317a, 317b, 317c, 319a, 319b, and 319c are included. May be exposed. To this end, the opening may be formed in plural.

Meanwhile, the package body 330a may have notches 330n thereon, as shown in FIG. 5C. The notches extend from the upper end portions of the package body 330 toward the opening. The notches may have a lower bottom at an outer side than an inner side of the package body 330.

In addition, the bottom surface of the heat sink 320 is exposed to the outside. In addition, the side surface of the base 321 may be exposed. Accordingly, heat dissipation through the heat sink 320 may be promoted.

Meanwhile, the package body 330 may be cylindrical, as shown in FIGS. 5A, 5B, and 5C, but is not limited thereto, and may be a polygonal cylinder such as a rectangular cylinder.

After coupling the heat sink 320 to the lead frame 310, the thermosetting resin or thermoplastic resin is injection molded to form the package body 330, so that the heat sink 320 and the package body 330 are strongly Combined.

2 and 6A, the support leads 315a and 315b protruding out of the package body 330 are cut and removed (S09). As a result, the cut support leads 316a and 316b remain in the package body 330, which further prevents the heat sink 320 from being separated from the package body 330.

Meanwhile, while cutting the support leads, the other separation leads may be cut and removed together except for leads to be used to supply current among the separation leads protruding out of the package body 330. For example, as shown in FIG. 6B, when only two separation leads 317c and 319c are needed, the remaining separation leads 317a, 317b, 319a and 319b are cut and removed. In addition, as shown in FIG. 6C, if four separation leads 317a, 317c, 319a, and 319c are needed, the remaining separation leads 317b and 319b are cut and removed.

Cutting and removing the separation leads is a process performed when a larger number of separation leads are provided in the leadframe 310 than are required in the LED package. Therefore, when the number of separation leads required in the LED package and the number of separation leads provided in the lead frame 310 coincide, the process of cutting and removing the separation leads is not performed. In addition, even if the extra separation leads remain, it does not affect the operation of the LED package, so cutting off and removing the extra separation leads may be omitted.

2 and 7, a light emitting diode chip 340 is mounted on an upper surface of the heat sink 320. The light emitting diode chip 340 may be made of a compound semiconductor of (Al, In, Ga) N, and is selected to emit light of a desired wavelength. For example, the light emitting diode chip 340 may be a compound semiconductor emitting blue light. The light emitting diode chip 340 has a light emitting cell array connected in series. A light emitting diode chip having the light emitting cell array connected in series will be described in detail with reference to FIGS. 16A to 18C.

The light emitting diode chip 340 may be a one bond die having electrodes on the top and bottom surfaces, or a two bond die having two electrodes on the top surface.

When the light emitting diode chip 340 is a one-bond die, the heat sink 320 is preferably an electrically conductive metal material. In this case, the chip 340 may be formed of an electrically conductive adhesive such as silver (Ag) epoxy. It is mounted on the heat sink 320 through. In contrast, when the LED chips 340 mounted on the heat sink 320 are all two bond dies, the heat sink 320 does not have to be electrically conductive, and the LED chip 340 is formed of silver. In addition to the epoxy may be mounted on the heat sink 320 through various thermally conductive adhesives.

Meanwhile, a plurality of light emitting diode chips 340 mounted on the heat sink 320 may be provided. In addition, the plurality of light emitting diode chips 340 may be light emitting diode chips that emit light having different wavelengths. For example, as illustrated in FIG. 7, three LED chips 340 may be mounted. In this case, the light emitting diode chips 340 may be light emitting diode chips that emit red, green, and blue light, respectively. Accordingly, the LED package 340 may emit light of all colors using the LED chips 340.

2 and 8A, the LED chips 341, 343, and 345 and the separation leads 317a, 317b, 317c, 319a, 319b, and 319c are electrically connected to each other by bonding wires (S313). When the LED chips 341, 343, and 345 are all two bond dies, each LED chip is connected to two lead terminals through two bonding wires. Meanwhile, as shown, the LED chips 341, 343, and 345 may be electrically connected to a pair of separate leads, respectively. In addition, one common separation lead (eg, 317b) and the light emitting diode chips may be connected to each other by bonding wires, and different separation leads (eg, 319a, 319b, and 319c) positioned opposite to the common separation lead may be formed. The LED chips may be connected to other bonding wires. In this case, the LED chips may be driven by different currents.

In order to be electrically connected to the bonding wires, the LED chip 340 may have two bonding pads electrically connected to both ends of the LED cell array connected in series.

 Meanwhile, a submount (not shown) having an electrode pattern formed between the light emitting diode chip 340 and the heat sink may be interposed. The bonding wires may connect the submount and the separation leads, and the light emitting cells may be connected in series by the electrode patterns. This will be described later with reference to FIGS. 18A to 18C.

Meanwhile, as illustrated in FIG. 8B, the one bond die 341a and the two bond dies 343 and 345 may be mounted together. At this time, one of the separation leads 317b is electrically connected to the heat sink 320 through the bonding wire. Thus, the separating lead 317b is electrically connected to the bottom surface of the one bond die 341a through a bonding wire and a heat sink 320. Combinations of one-bond dies and two-bond dies vary, and a variety of ways of connecting the bonding wires may be adopted for each combination.

In addition, a method of connecting the separation leads and the LED chips may be variously selected, and the plurality of LED chips may be connected in series, in parallel, or in parallel.

Meanwhile, after electrically connecting the LED chips 341, 343, and 345 to the separation leads using bonding wires, the LED chips 341, 343, and 345 are sealed using a molding member (not shown). (S15). The molding member protects the LED chips from an external environment such as external force and moisture. The molding member may be selected within a hardness range with a durometer shore value of 10 A or more and 70 D or less so as to alleviate stress on the light emitting diode chips. The molding member may fill the opening of the package body 330 to seal the LED chips and the bonding wires.

Alternatively, the molding member may be a multiple molding including at least two molding members having different hardness values, that is, a first molding member and a second molding member. In this case, the first molding member may have a durometer shore value of less than 50A, and the second molding member may be 50A or more.

In addition, a phosphor may be located on the light emitting diode chip. The molding member may contain a phosphor. For example, the phosphor may be a phosphor that converts blue light into yellow or green and red. Therefore, when a light emitting diode chip emitting blue light is mounted on the heat sink 320, a part of light emitted from the light emitting diode chip is converted into yellow, green, and red, and white light is emitted to the outside. Can be provided. The phosphor is not limited to the phosphor that converts the colors, and may be variously selected to provide a light emitting diode package that emits a color desired by a user other than white. In addition, the phosphor is not limited to that contained in the molding member, and may be applied onto the light emitting diode.

In addition, the molding member may further contain a diffusing agent. The diffusing agent disperses the light emitted from the light emitting diode chips to prevent the light emitting diode chips and the bonding wires from being observed from the outside and to uniformly emit the light.

After sealing the LED chips with the molding member, a lens (not shown) is formed on the package body 330 (S17). The lens may be formed by curing a transparent resin such as epoxy resin or silicone resin using a molding technique. At this time, as shown in Figure 5c, the notches 330n formed on the upper portion of the package body 330 serves as an air discharge passage. The lens is used to emit light within a certain direction angle, and may be omitted if it is not necessary to use the lens. On the other hand, the molding member may be cured into a lens shape to act as a lens, wherein the process of forming the lens is omitted.

2 and 9, the separation leads 317a, 317b, 317c, 319a, 319b, and 319c are cut and bent from the outer frame 311 (S19). As a result, connecting leads that can be electrically connected to an external circuit are completed, and a light emitting diode package capable of surface mounting is completed. Meanwhile, the step S09 of cutting and removing the support leads may be performed together in the step S19 of cutting the separation leads from the outer frame 311.

Hereinafter, a light emitting diode package according to an embodiment of the present invention will be described in detail with reference to FIGS. 9 and 10.

Referring back to FIG. 9, the light emitting diode package includes a heat sink support ring 313. The support ring 313 is made of a copper alloy such as phosphor bronze. The support ring 313, as shown, may be a circular ring shape, but is not limited to this, it may be a polygonal ring shape. The support leads 316a and 316b cut out of the support ring 313 are positioned to extend. The cut support leads 316a and 316b may be located at opposite sides of the support ring 313.

The heat sink 320 as described above with reference to FIG. 3 is inserted into the support ring 313.

Meanwhile, at least two connection leads 317a, 317b, 317c, 319a, 319b, and 319c are spaced apart from the support ring 313 and the heat sink 320 and disposed on both sides of the support ring. The connecting leads may be bent to allow surface mounting.

In addition, the package body 330 molds and supports the heat sink 320 and the connection leads. The package body 330 has an upper surface of the heat sink 320 and an opening exposing portions of the connection leads. On the other hand, the connection leads protrude to the outside through the side wall of the package body 330.

As described with reference to FIG. 5A, a portion of the support ring 313 and the support leads 315a and 315b may be exposed by the opening. Accordingly, a groove is formed in the upper portion of the package body 330. In addition, as described with reference to FIG. 5B, the package body (330a of FIG. 5B) may cover most of the heat sink 320 except for an upper end portion thereof and may expose only portions of the connection leads. Therefore, the opening may be formed in plural. In addition, the package body 330 may have notches 330n extending from the upper end portions to the openings, as shown in FIG. 10.

The package body 330 is a plastic resin formed by injection molding a thermosetting resin after inserting and fixing the heat sink 320 to the support ring 313.

Meanwhile, light emitting diode chips 341, 343, and 345 are mounted on an upper surface of the heat sink 320. At least one of the light emitting diode chips has a light emitting cell array connected in series. The light emitting diode chips shown in FIG. 9 represent two bond dies, but are not limited thereto. The light emitting diode chips may be one bond dies or a combination of one bond die and two bond dies.

The LED chips are electrically connected to the connection leads through bonding wires. When the light emitting diode chips are two bond dies, each light emitting diode chip is electrically connected to two connection leads through two bonding wires.

The method of connecting the LED chips and the lead terminals may vary, and may be selected according to the characteristics of the LED package required.

On the other hand, a molding member (not shown) covers and seals the LED chips. The molding member fills the grooves formed in the upper portion of the package body 330. In addition, the molding member may contain a phosphor and / or a diffusion agent. On the other hand, the molding member may have a lens shape. Alternatively, a lens (not shown) may be formed on the package body 330 to cover the molding member.

According to the present embodiment, since the heat sink 320 is inserted into and fixed to the heat sink support ring 313, the heat sink 320 may be prevented from being separated from the package body 330.

In the LED package described above, the connection leads 317a, 317b, 317c, 319a, 319b, and 319c are spaced apart from the support ring 313. However, the present invention is not limited thereto, and one of the connection leads may be connected to the support ring 313. Hereinafter, a light emitting diode package in which one of the connection leads according to another embodiment of the present invention is connected to the support ring will be described.

11 and 12 are a perspective view and a plan view illustrating a light emitting diode package 550 according to another embodiment of the present invention, respectively, and FIG. 13 shows a light emitting diode chip and a lens 575 in the light emitting diode package 550. It is a mounted cross section. 14 and 15 are plan views illustrating a lead frame used in the LED package 550 according to another embodiment of the present invention.

11 to 13, the LED package 550 includes a heat sink support ring 553, a heat sink inserted into the support ring 553, connection leads 555 and 557, and a package body 570. Has

The heat sink support ring 553 may be a C-shaped ring partially cut, as shown in FIG. 14, but is not limited thereto, and the heat sink support ring 553 may be closed, such as the support ring 583 illustrated in FIG. 15. Can be.

A connection lead 555 extends outwardly from the support ring 553, and the connection lead 557 is spaced apart from the support ring 553 and disposed near the support ring 553. When the support ring 553 is a C-type ring, the connection lead 557 may be extended to the cutout of the support ring 553. Accordingly, an end portion of the connection lead 557 may be disposed closer to the center of the support ring 553, thereby reducing the size of the package body 570 compared to the lead frame of FIG. 15. On the other hand, the portion removed from the support ring 553 is preferably less than 1/4 of the entire ring. That is, as the removed portion is smaller, the contact surface of the support ring 553 and the heat sink 560 increases, thereby strengthening the electrical connection.

As shown in FIG. 14 or 15, the connection lead 555 supports a heat sink support ring 553 and a support lead 555a for connecting an outer frame (311 of FIG. 1) surrounding the heat sink support ring. The connecting lead 557 is formed from a separating lead 557a extending toward the support ring 553 in the outer frame. Accordingly, the support ring 553 and the leads 555a and 557a may be formed by pressing a single phosphor bronze plate. In addition to the support lead 555a, additional support leads may connect the outer frame and the support ring 553, and additional separation leads other than the separation lead 557a may be spaced apart from the support ring 553. Meanwhile, the separation lead 557 may have a larger end portion near the support ring 553 as shown in the separation leads of FIG. 1 to prevent the separation lead 557 from being separated from the package body 570. It may have a through hole 557c. The through hole 557c accommodates a portion of the package body 570 to prevent the separation lead 557a from being separated from the package body.

The heat sink 560 is inserted into the support ring 553. As described with reference to FIG. 3, the heat sink 560 may have a base portion and a protrusion protruding upward from a center portion of the base portion, and the protrusion is inserted into the support ring 553. In addition, an accommodating groove may be formed at the side of the protrusion to accommodate the support ring. The receiving groove is formed as a spiral groove along the outer surface of the protrusion. Since the heat sink 560 has a spiral groove, the heat sink 560 may be rotated and inserted into the support ring 553. Thus, the heat sink 560 is directly electrically connected to the connection lead 555 through the support ring 553.

In addition, the heat sink 560 may have a locking groove on the base side surface 560b. The locking groove may be formed in a portion of the base side surface 560b and may be continuous along the outer circumferential surface. As the bottom surface of the heat sink 560 is wider to promote heat dissipation, as shown in FIGS. 11 and 13, the lower end of the side surface of the base may be exposed to the outside. However, the locking groove and the base side surface thereon is covered with the package body 570. Therefore, the locking groove receives a portion of the package body 570, thereby further preventing the heat sink 560 from being separated from the package body 570.

The heat sink 560 is formed of a conductive material, and in particular, may be formed of a metal or an alloy such as copper (Cu) or aluminum (Al). In addition, the heat sink 560 may be formed using a molding technique or a press working technique.

A package body 570 is attached to the heat sink 560 and the connection leads 555, 557 to support them. The package body 570 is formed by inserting the heat sink 560 into the support ring 553 and then insert molding a thermoplastic or thermosetting resin. Accordingly, the package body 570 fills the engaging groove of the heat sink 560 and is attached to the heat sink 560 and the connection leads 555 and 557 to couple them.

The package body 570 has an opening that exposes an upper surface of the heat sink 560 and a portion of the connection lead 557. The opening may expose a portion of the connection lead 555. In this case, the protrusion of the heat sink 560 may protrude above the top surface of the package body 570, as shown in FIG. 13. In addition, the package body 570 may further have a lens receiving groove 570h positioned along an outer periphery on its upper surface. The lens receiving groove 570h accommodates the lens 575 to prevent the lens 575 from being separated from the package body 570. In addition, a notch 570n may be formed on an upper surface of the package body 570. The notches 570n may be formed at positions facing each other, as shown in FIG. 10.

Referring again to FIG. 13, a light emitting diode chip 571 having an array of light emitting cells connected in series on a heat sink 560 is mounted. The light emitting diode chip 571 may be made of a compound semiconductor of (Al, In, Ga) N, and is selected to emit light of a desired wavelength. For example, the light emitting diode chip 571 may be a compound semiconductor emitting blue light. A light emitting diode chip having the light emitting cell array connected in series will be described in detail with reference to FIGS. 16A to 18C.

In addition, the LED chip 571 may be a one-bond die having upper and lower electrodes on the top and bottom surfaces thereof, respectively. The lower electrode is attached to the heat sink 560 by a conductive adhesive such as silver (Ag) epoxy. Since the heat sink 560 is directly electrically connected to the connection lead 555, the LED chip 571 is electrically connected to the connection lead 555 through the heat sink. Therefore, the bonding wire for connecting the LED chip 571 and the connection lead 555 may be omitted. The upper electrode of the LED chip 571 is electrically connected to the connection lead 557 through a bonding wire 573.

Alternatively, the LED chip 571 may be a two-bond die having two electrodes on the same surface. In this case, the two electrodes are electrically connected to the connection leads 555 and 557 through bonding wires, respectively. In this case, since the connection lead 555 is directly and electrically connected to the heat sink 560, the light emitting diode chip 571 and the heat sink 560 may be connected by bonding wires. Therefore, a wiring process for connecting the light emitting diode chip 571 and the heat sink 560 with bonding wires is easier than in the related art.

Meanwhile, a molding member covers and seals the upper portion of the LED chip. The molding member may be an epoxy resin or a silicone resin. In addition, the molding member may include a phosphor for converting the wavelength of light emitted from the light emitting diode chip 571. For example, when the light emitting diode chip 571 emits blue light, the molding member may include a phosphor that converts blue light into yellow light or converts blue light into green light and red light. As a result, white light is emitted from the light emitting diode package to the outside.

The molding member may be a multiple molding including a first molding member and a second molding member. In this case, the phosphor may be contained in the first molding member and / or the second molding member.

A lens 575 covers the molding member. The lens 575 may have the shape of a convex lens, as shown in FIG. 13, so that the light emitted from the LED chip 571 is emitted within a predetermined direction angle. The lens 575 may be formed by molding a transparent resin such as a silicone resin or an epoxy resin. The lens 575 fills the lens receiving groove 570h. Therefore, the bonding force between the lens 575 and the package body 570 is increased to prevent the molding member from being separated from the LED package.

On the other hand, the molding member may be molded into a lens shape, and thus the molding member and the lens 575 may be integrally formed. In this case, the molding member fills the opening of the package body 570 and the lens receiving groove 570h.

Hereinafter, a light emitting diode chip having light emitting cells connected in series for use in embodiments of the present invention will be described in detail.

16A and 16B are circuit diagrams illustrating an operation principle of a light emitting diode chip having a plurality of light emitting cells according to embodiments of the present invention.

Referring to FIG. 16A, light emitting cells 31a, 31b, and 31c are connected in series to form a first series light emitting cell array 31, and another light emitting cells 33a, 33b, and 33c are connected in series to each other. Two series light emitting cell arrays 33 are formed. Here, the "serial light emitting cell array" means an array in which a plurality of light emitting cells are connected in series.

Both ends of the first and second series arrays 31 and 33 are connected to an AC power source 35 and a ground, respectively. The first and second series arrays are connected in parallel between the AC power source 35 and ground. That is, both ends of the first and second series arrays are electrically connected to each other.

Meanwhile, the first and second series arrays 31 and 33 are disposed to drive the light emitting cells by currents flowing in opposite directions. That is, as shown, the anode and cathode of the light emitting cells included in the first series array 31 and the anode and the cathode of the light emitting cells included in the second series array 33 are opposite to each other. Is placed.

Therefore, when the AC power source 35 is in a positive phase, the light emitting cells included in the first series array 31 are turned on to emit light, and the light emitting cells included in the second series array 33 are turned off. On the contrary, when the AC power source 35 is in a negative phase, the light emitting cells included in the first series array 31 are turned off, and the light emitting cells included in the second series array 33 are turned on.

As a result, the first and second series arrays 31 and 33 alternately turn on and off by AC power, so that the light emitting diode chip including the first and second series arrays is continuously lighted. Emits.

The light emitting diode chips consisting of one light emitting diode may be connected and driven using an AC power source as in the circuit of FIG. 16A, but the space occupied by the light emitting diode chips increases. However, the light emitting diode chip of the present invention can be driven by connecting an AC power source to one chip, so that the occupied space does not increase.

Meanwhile, although the circuit of FIG. 16A is configured such that both ends of the first and second series arrays are connected to the AC power source 35 and the ground, respectively, the both ends may be connected to both terminals of the AC power source. In addition, the first and second series arrays are each composed of three light emitting cells, but this is only an example to help explain, and the number of light emitting cells may be further increased as necessary. In addition, the number of the serial arrays may be further increased.

Referring to FIG. 16B, the light emitting cells 41a, 41b, 41c, 41d, 41e, and 41f constitute a series light emitting cell array 41. Meanwhile, a bridge rectifier including diode cells D1, D2, D3, and D4 is disposed between the AC power source 45, the series light emitting cell array 41, and the ground and the series light emitting cell array 41. The diode cells D1, D2, D3, and D4 may have the same structure as the light emitting cells, but are not limited thereto and may not emit light. An anode terminal of the series light emitting cell array 41 is connected to a node between the diode cells D1 and D2, and a cathode terminal is connected to a node between diode cells D3 and D4. Meanwhile, the terminal of the AC power supply 45 is connected to a node between the diode cells D1 and D4, and the ground is connected to a node between the diode cells D2 and D3.

When the AC power supply 45 has a positive phase, the diode cells D1 and D3 of the bridge rectifier are turned on and the diode cells D2 and D4 are turned off. Thus, the current flows to ground through the diode cell D1 of the bridge rectifier, the series light emitting cell array 41 and the diode cell D3 of the bridge rectifier.

On the other hand, when the AC power supply 45 has a negative phase, the diode cells D1 and D3 of the bridge rectifier are turned off and the diode cells D2 and D4 are turned on. Thus, current flows through the diode cell D2 of the bridge rectifier, the series light emitting cell array 41 and the diode cell D4 of the bridge rectifier to the AC power source.

As a result, by connecting the bridge rectifier to the series light emitting cell array 41, it is possible to continuously drive the series light emitting cell array 41 using the AC power supply 45. Here, although the terminals of the bridge rectifier are configured to be connected to the AC power source 45 and the ground, the terminals of the bridge rectifier may be configured to be connected to both terminals of the AC power source. Meanwhile, as the series light emitting cell array 41 is driven using an AC power source, ripple may occur, and an RC filter may be connected to prevent the ripple.

According to the present embodiment, one series of light emitting cell arrays may be electrically connected to and driven by an AC power source, and the use efficiency of the light emitting cells may be improved as compared to the light emitting diode chip of FIG. 16A.

The light emitting cells described with reference to FIG. 16A or 16B are arranged in a single light emitting diode chip. Hereinafter, a light emitting diode chip having light emitting cells connected in series will be described in detail.

17A and 17B are cross-sectional views illustrating a light emitting diode chip having light emitting cells connected in series according to an embodiment of the present invention.

17A and 17B, a plurality of light emitting diodes 100-1 are spaced apart from each other on a substrate 20 and serially connected by wirings 80-1 to 80-n. To 100-n). That is, in the LED chip, the N-type semiconductor layer 40 and the P-type semiconductor layer 60 of the adjacent light emitting cells 100-1 to 100-n are electrically connected to each other, and the light emitting cells 100-n at one end thereof are electrically connected. A plurality of N-type pads 95 are formed on the N-type semiconductor layer 40, and the P-type pads 90 are formed on the P-type semiconductor layer 60 of the light emitting cell 100-1 at the other end. It includes a light emitting cell 100.

The N-type semiconductor layer 40 and the P-type semiconductor layer 60 of the adjacent light emitting cells 100-1 to 100-n are electrically connected through the metal wiring 80. In addition, in the present invention, it is effective to connect the light emitting cells 100-1 to 100-n in series to form the number of voltages capable of AC driving. According to the present invention, the number of light emitting cells 100 connected in series may vary depending on a voltage / current for driving a single light emitting cell 100 and an AC driving voltage applied to a light emitting diode chip for illumination. For example, in the 220V AC driving, 66 to 67 unit light emitting cells of 3.3V are connected in series to a constant driving current to manufacture a light emitting diode chip. In addition, in the 110V AC driving, 33 to 34 3.3V unit light emitting cells are connected in series to a constant driving current to manufacture a light emitting diode chip.

For example, as shown in FIG. 17A, in the light emitting diode chip in which the first to nth light emitting cells 100-1 to 100-n are connected in series, the P-type semiconductor layer of the first light emitting cell 100-1 ( 60, a P-type pad 90 is formed, and the N-type semiconductor layer 40 of the first light emitting cell 100-1 and the P-type semiconductor layer 60 of the second light emitting cell 100-2 are formed. It is connected via the 1st wiring 80-1. In addition, the N-type semiconductor layer 40 of the second light emitting cell 100-3 and the P-type semiconductor layer (not shown) of the third light emitting cell (not shown) are connected through the second wiring 80-2. . The n-type semiconductor layer (not shown) of the n-2 th light emitting cell (not shown) and the P-type semiconductor layer 60 of the n-1 th light emitting cell 100-n-1 are connected to the n-2 wiring ( N-type semiconductor layer 40 of n-th light emitting cell 100-n-1 and P-type semiconductor layer 60 of n-th light emitting cell 100-n, which are connected via 80-n-2; Is connected via the n-th wiring 80-n-1. In addition, an N-type pad 95 is formed in the N-type semiconductor layer 40 of the n-th light emitting cell 100-n.

The substrate 20 of the present invention may be a substrate capable of manufacturing a plurality of light emitting diode chips. 17A and 17B show cut regions for individually cutting the plurality of light emitting diode chips.

In addition, the LED chip described above may have rectifying diode cells (D1 to D4 in FIG. 16B) for rectifying an external AC voltage. The diode cells are arranged in the form of a rectifying bridge. Nodes of the diode cells may be connected to the N-type pad and the P-type pad of the light emitting cell, respectively. The diode cells may be light emitting cells having the same structure as the light emitting cells.

Hereinafter, a method of manufacturing a light emitting diode chip having light emitting cells connected in series will be described.

The buffer layer 30, the N-type semiconductor layer 40, the active layer 50, and the P-type semiconductor layer 60 are sequentially grown on the substrate 20. The transparent electrode layer 70 may be further formed on the P-type semiconductor layer 60. The substrate 20 may include sapphire (Al ₂ O ₃ ), silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP) 0, and lithium-alumina (LiAl _2). O _{3 )} , boron nitride (BN), aluminum nitride (AlN), or gallium nitride (GaN) substrate, and may be selected according to the material of the semiconductor layer to be formed on the substrate 20. In the case of using a gallium nitride based semiconductor layer, a sapphire or silicon carbide (SiC) substrate is preferable.

The buffer layer 30 may be, for example, a gallium nitride layer (GaN) as a layer for reducing lattice mismatch between the substrate 20 and subsequent layers during crystal growth. When the SiC substrate is a conductive substrate, the buffer layer 30 may be formed of an insulating layer, and may be formed of semi-insulating GaN. The N-type semiconductor layer 40 is a layer in which electrons are generated, and is formed of an N-type compound semiconductor layer and an N-type cladding layer. In this case, the N-type compound semiconductor layer may use GaN doped with N-type impurities. The P-type semiconductor layer 60 is a layer in which holes are formed, and is formed of a P-type cladding layer and a P-type compound semiconductor layer. In this case, AlGaN doped with P-type impurities may be used for the P-type compound semiconductor layer.

The active layer 50 is a region where a predetermined band gap and a quantum well are made to recombine electrons and holes, and may include an InGaN layer. In addition, according to the kind of material constituting the active layer 50, the emission wavelength generated by electron and hole coupling is changed. Therefore, it is preferable to adjust the semiconductor material contained in the active layer 50 according to the target wavelength.

Thereafter, a portion of the N-type semiconductor layer 40 is exposed by patterning the P-type semiconductor layer 60 and the active layers 50 using a photolithography and an etching process. In addition, a portion of the exposed N-type semiconductor layer 40 is removed to electrically insulate each of the light emitting cells 100. In this case, as shown in FIG. 17A, the exposed surface of the substrate 20 may be exposed by removing the exposed buffer layer 30, and as shown in FIG. 17B, the etching may be stopped in the buffer layer 30. When the buffer layer 30 is conductive, the exposed buffer layer 30 is removed to electrically separate the light emitting cells.

Diode cells for rectifying bridges may also be formed using the same method as the above-described manufacturing process. Of course, it is also possible to form diode cells for rectifying bridge separately using a conventional semiconductor manufacturing process.

Subsequently, the N-type semiconductor layer 40 and the P-type semiconductor layer 60 of the adjacent light emitting cells 100-1 to 100-n are formed through a predetermined bridge process or a step cover process. Conductive wires 80-1 to 80-n-1 that electrically connect the wires to each other. The conductive wires 80-1 to 80-n-1 are formed using a conductive material, but are formed using a silicon compound doped with a metal or an impurity.

The bridge process is also called an air bridge process, and this process will be briefly described. First, after forming a photoresist film on the substrate on which the light emitting cells are formed, a first photoresist pattern having an opening for exposing the exposed N-type semiconductor layer and the electrode layer on the P-type semiconductor layer is formed by using an exposure technique. Thereafter, the metal material layer is thinly formed by using an electron beam evaporation technique. The metal material layer is formed on the entire surface of the opening and the photoresist pattern. Subsequently, a second photoresist pattern is formed on the photoresist pattern to expose regions between adjacent light emitting cells to be connected and the metal layer of the openings. Thereafter, gold and the like are formed using a plating technique, and then the first and second photoresist patterns are removed. As a result, only wirings connecting adjacent light emitting cells remain, and all other metal material layers and photoresist patterns are removed, so that the wirings connect the light emitting cells in a bridge form.

Meanwhile, the step cover process includes forming an insulating layer on a substrate having light emitting cells. The insulating layer is patterned using photolithography and etching techniques to form openings that expose the P-type semiconductor layer and the electrode layer on the N-type semiconductor layer. Subsequently, an electron beam deposition technique or the like is used to form a metal layer filling the opening and covering the insulating layer. Thereafter, the metal layer is patterned using photolithography and etching techniques to form interconnects that connect adjacent light emitting cells. Such a step cover process is possible in various modifications. Using the step cover process, the wiring is supported by the insulating layer, thereby increasing the reliability of the wiring.

Meanwhile, P-type pads 90 and N-type pads 95 are formed in the light emitting cells 100-1 and 100-n located at both ends, respectively, for electrical connection with the outside. The rectifying bridge diode cells may be connected to the P-type pad 90 and the N-type pad 95, respectively, and the bonding wires may be connected to the P-type pad 90 and the N-type pad 95, respectively.

The manufacturing method of the light emitting diode chip of the present invention described above is only one embodiment, and is not limited thereto. Various processes and manufacturing methods may be changed or added according to the characteristics of the device and the convenience of the process.

For example, a plurality of vertical light emitting cells having a shape in which an N-type electrode, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a P-type electrode are sequentially stacked are formed on a substrate, or light-emitting cells having such a structure are formed. Bonding is arranged on a substrate. Thereafter, the N-type electrode and the P-type electrode of adjacent light emitting cells may be connected by wires to connect a plurality of light emitting cells in series to manufacture a light emitting diode chip. Of course, the vertical light emitting cell is not limited to the above-described structure is possible in a variety of structures. In addition, after forming a plurality of light emitting cells on a substrate, by bonding the light emitting cells on a separate host substrate, and separating the substrate using a laser, or by using a chemical mechanical polishing technique to remove on the host substrate It is also possible to form a plurality of light emitting cells. Thereafter, adjacent light emitting cells can be connected in series by wiring.

Each of the light emitting cells 100 includes an N-type semiconductor layer 40, an active layer 50, and a P-type semiconductor layer 60 that are sequentially stacked on the substrate 20, and the buffer layer 30 includes the substrate 20. ) And the light emitting cell 100. Each of the light emitting cells 100 includes a transparent electrode layer 70 formed on the P-type semiconductor layer 60. In addition, the vertical light emitting cell includes an N-type electrode disposed under the N-type semiconductor layer.

The N-type bonding pad and the P-type bonding pad are pads for electrically connecting the light emitting cell 100 to an external metal wiring or bonding wire, and may be formed in a stacked structure of Ti / Au. The bonding pads may be formed on the N-type semiconductor layer and the P-type semiconductor layer of all the light emitting cells. In addition, the transparent electrode layer 70 serves to uniformly transfer the voltage input through the P-type bonding pad to the P-type semiconductor layer 60.

18A to 18C are cross-sectional views illustrating a light emitting diode chip 1000 having light emitting cells connected in series according to another embodiment of the present invention. Here, the light emitting diode chip 1000 has flip chip type light emitting cells, and the light emitting diode chip 1000 is coupled to the submount 2000 and mounted on the heat sink.

Referring to FIG. 18A, a plurality of flip chip type light emitting cells are arranged on a substrate 110 of the light emitting diode chip 1000. Each of the light emitting cells includes an N-type semiconductor layer 130 formed on the substrate 110, an active layer 140 formed on a portion of the N-type semiconductor layer 130, and a P-type semiconductor layer 150 formed on the active layer 140. ). Meanwhile, a buffer layer 120 may be interposed between the substrate 110 and the light emitting cells. In this case, in order to reduce the contact resistance of the P-type semiconductor layer 150, a separate P-type electrode layer 160 may be formed on the P-type semiconductor layer 150. The P-type electrode layer may be a transparent electrode layer, but does not need to be a transparent electrode layer. The light emitting diode chip 1000 may include a P-type metal bumper 170 formed on the P-type electrode layer 150 for bumping and an N-type metal formed on the N-type semiconductor layer 130 for bumping. It further includes a bumper 180. In addition, the P-type electrode layer 160 may further include a reflecting layer (not shown) having a reflectance of 10 to 100%. In addition, a separate ohmic metal layer may be further formed on the P-type semiconductor layer 150 to facilitate supply of current.

The substrate 110, the buffer layer 120, the N-type semiconductor layer 130, the active layer 140, and the P-type semiconductor layer 150 have the same substrate 20 and semiconductor as described with reference to FIGS. 17A and 17B. It may be formed in layers.

The submount substrate 2000 includes a substrate 200 in which a plurality of N regions and P regions are defined, a dielectric film 210 formed on the surface of the substrate 200, and a plurality of electrodes connecting adjacent N and P regions. Pattern 230. The apparatus may further include a P-type bonding pad 240 extending to a P region located at one edge and an N-type bonding pad 250 extending to an N region located at the other edge.

The N region refers to a region to which the N-type metal bumper 180 of the LED chip 1000 is to be connected, and the P region refers to a region to which the P-type metal bumper 170 of the LED chip 1000 is to be connected. do.

In this case, a substrate having excellent thermal conductivity is used as the substrate 200. For example, SiC, Si, germanium (Ge), silicon germanium (SiGe), AlN, or a metal substrate can be used. As the dielectric film 210, any dielectric material through which a current flows below 1 μm may be used. Of course, the present invention is not limited thereto, and an insulating material through which no current flows can be used. In addition, the dielectric film 210 may be formed in multiple layers. When the substrate is nonconductive, the dielectric film 210 may be omitted. As the dielectric layer 210, silicon oxide (SiO ₂ ), magnesium oxide (MgO), or silicon nitride (SiN) may be used.

The electrode pattern 230, the N-type bonding pad 250, and the P-type bonding pad 240 may use a metal having excellent electrical conductivity.

Hereinafter, a manufacturing method of a sub-mount substrate for a light emitting diode chip having a flip chip type light emitting cell will be described.

The substrate 200 is formed in an uneven shape to define the N region and the P region. The N region and the P region may vary in width, height, and shape according to sizes of the N-type metal bumper 180 and the P-type metal bumper 170 of the LED chip 1000 to be bonded. . In this embodiment, the convex portion of the substrate 200 becomes the N region, and the recessed portion of the substrate becomes the P region A. The substrate 200 of this shape may be manufactured using a separate mold, or may be manufactured using a predetermined etching process. That is, after forming a mask exposing the P region on the substrate 200, a portion of the exposed substrate 200 is removed to form a recessed P region. Subsequently, removing the mask forms an N region protruding relatively to the recessed P region. In addition, the recessed P region may be formed through mechanical processing.

Thereafter, the dielectric film 210 is formed on the entire structure. In this case, when the conductive material is not used as the substrate 200, the dielectric film 210 may not be formed. In the case of using a metal substrate having excellent electrical conductivity to improve thermal conductivity, the dielectric film 210 may be formed to provide sufficient insulation.

Electrode patterns 230 are formed on the dielectric layer 210 to connect adjacent N and P regions in a pair. The electrode patterns 230 may be formed by a screen printing method, or after the electrode layer is deposited, the electrode patterns 230 may be formed by patterning using a photolithography and an etching process.

The P-type metal bumper 170 of the light emitting diode chip 1000 is bonded to the electrode pattern 230 on the P region, and the N-type metal bumper 180 is bonded to the electrode pattern 230 on the N region. The chip 1000 and the submount substrate 2000 are bonded. In this case, the light emitting cells of the LED chip 1000 are connected in series by the electrode patterns 230 to form an array of light emitting cells connected in series. P-type bonding pads 240 and N-type bonding pads 250 are positioned at both ends of the series-connected light emitting cell arrays, and are connected to the bonding wires, respectively.

In this case, the metal bumps 170 and 180, the electrode patterns 230, and the bonding pads 240 and 250 may be bonded through various bonding methods. For example, the metal bumps 170 and 180 may be bonded using an eutectic method using a eutectic temperature. Can be.

In this case, the number of light emitting cells connected in series may vary depending on the power source and power to be used, and may be formed in the same number as described with reference to FIGS. 17A and 17B.

Referring to FIG. 18B, instead of arranging a plurality of light emitting cells on the substrate 110 as shown in FIG. 18A, individual light emitting cells 100a to 100c may be separately bonded on the sub-mount substrate 2000. . In addition, in the light emitting diode chip 1000 of FIG. 18A, the substrate 110 may be separated using a laser, or the substrate 110 may be removed using a chemical mechanical polishing technique. At this time, the N-type metal bumper 170 and the P-type metal bumper 180 of the adjacent light emitting cells 100a to 100c are bonded to the electrode patterns 230 formed on the sub-mount substrate 2000 to electrically connect the light emitting cells. Are connected in series.

Referring to FIG. 18C, electrode patterns 230 are formed on the flat substrate 200 in which a plurality of N regions and P regions are defined to connect adjacent N regions A and P regions B, respectively. The light emitting diode chip 1000 may be mounted on the submount substrate 2000. That is, unlike FIG. 18A, the electrode patterns 230 are formed on the substrate 200 on which the predetermined pattern is not formed, and then the N-type metal bumpers 170 of the adjacent light emitting cells of the LED chip 1000 are formed. The P-type metal bumper 180 may be electrically connected.

In addition, the N-type and P-type metal bumpers 170 and 180 are not formed in the light emitting cells in the LED chip 1000, and the metals are formed in the N region B and the P region A on the sub-mount substrate 2000, respectively. Bumpers 170 and 180 may be formed. In this case, a predetermined metal electrode (not shown) may be further formed on the N-type and P-type semiconductor layers 130 and 150 to be bonded to the metal bumpers 170 and 180.

In addition, in the present invention, a separate bridge circuit may be configured in the light emitting diode chip 1000 for use in a home power source. In addition, two or more of the series-connected light emitting cell arrays may be formed so that they may be connected in parallel to be driven by a home power source.

According to embodiments of the present invention, a heat sink can be adopted to increase heat dissipation efficiency, and a heat sink support ring can be employed to prevent the heat sink from being separated from the package body. By mounting a light emitting diode chip having a light emitting diode chip, a light emitting diode package that can be driven using an AC home power source can be provided without an AC-DC converter.

Claims (13)

Heat sink support ring; A heat sink inserted into the support ring; At least two connecting leads spaced apart from the support ring and the heat sink and disposed at both sides of the support ring; A package body attached to and supporting the heat sink and the connection leads, the package body having an opening for exposing a portion of each of the connection leads and an upper surface of the heat sink; A light emitting diode chip mounted on the heat sink and having a light emitting cell array connected in series; And  A light emitting diode package comprising bonding wires electrically connecting the light emitting diode chip to the connection leads. Heat sink support ring; A heat sink having a spiral groove on an upper side thereof and inserted into the support ring using the spiral groove; At least two connecting leads disposed on both sides of the support ring, one of which is connected to the support ring; A package body attached to and supporting the heat sink and the connection leads, the package body having an opening for exposing a portion of each of the connection leads and an upper surface of the heat sink; A light emitting diode chip mounted on the heat sink and having a light emitting cell array connected in series; And  A light emitting diode package comprising bonding wires electrically connecting the light emitting diode chip to the connection leads. The method according to claim 1 or 2, The light emitting diode chip Board; And And a light emitting cell electrically insulated from the substrate and spaced apart from each other on the substrate. The method of claim 3, The light emitting diode chip includes a light emitting diode package including wirings connecting the light emitting cells in series. The method of claim 3, A sub-mount interposed between the light emitting diode chip and the heat sink and having electrode patterns corresponding to the light emitting cells; The light emitting diode package of the light emitting cells are connected in series by the electrode patterns. The method according to claim 1 or 2, The light emitting diode package further comprises a molding member covering the light emitting diode chip. The method of claim 6, The molding member is a light emitting diode package, characterized in that the lens shape. The method of claim 6, The molding member includes at least two molding members having different hardness values. The method according to claim 1 or 2, The light emitting diode package further comprises a phosphor located above the light emitting diode chip. The method according to claim 1 or 2, The light emitting diode chip includes a bridge rectifier consisting of diode cells. The method according to claim 1 or 2, The LED chip includes a P-type pad and an N-type pad for connecting the bonding wires. Heat sink support ring; A heat sink inserted into the support ring; At least two connecting leads spaced apart from the support ring and the heat sink and disposed at both sides of the support ring; A package body attached to and supporting the heat sink and the connection leads, the package body having an opening for exposing a portion of each of the connection leads and an upper surface of the heat sink; A submount mounted on the heat sink and having electrode patterns; Light emitting cells bonded to the electrode patterns of the submount and connected in series; And A light emitting diode package comprising bonding wires electrically connecting the submount to the connection leads. Heat sink support ring; A heat sink having a spiral groove on an upper side thereof and inserted into the support ring using the spiral groove; At least two connecting leads disposed on both sides of the support ring, one of which is connected to the support ring; A package body attached to and supporting the heat sink and the connection leads, the package body having an opening for exposing a portion of each of the connection leads and an upper surface of the heat sink; A submount mounted on the heat sink and having electrode patterns; Light emitting cells bonded to the electrode patterns of the submount and connected in series; And A light emitting diode package comprising bonding wires electrically connecting the submount to the connection leads.

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