KR20090106876A - Exposure apparatus for manufacturing semiconductor device - Google Patents

Exposure apparatus for manufacturing semiconductor device Download PDF

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Publication number
KR20090106876A
KR20090106876A KR1020080032269A KR20080032269A KR20090106876A KR 20090106876 A KR20090106876 A KR 20090106876A KR 1020080032269 A KR1020080032269 A KR 1020080032269A KR 20080032269 A KR20080032269 A KR 20080032269A KR 20090106876 A KR20090106876 A KR 20090106876A
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South Korea
Prior art keywords
moisture
exposure apparatus
exposure
photomask
dehumidifier
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KR1020080032269A
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Korean (ko)
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이준식
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주식회사 하이닉스반도체
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Priority to KR1020080032269A priority Critical patent/KR20090106876A/en
Publication of KR20090106876A publication Critical patent/KR20090106876A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Abstract

PURPOSE: An exposure apparatus for manufacturing a semiconductor device is provided to suppress moisture supply which is a main cause of growing foreign material within a photomask by comprising a dehumidifier for removing moisture within exposure equipment. CONSTITUTION: An exposure apparatus(100) performs exposure to a photoresist film on a wafer by transmitting light to a photomask. The exposure equipment includes a dehumidifier(200). The dehumidifier is attache to one side of the exposure equipment. The dehumidifier removes moisture inside the exposure equipment to suppress moisture supply which is a main cause of growing foreign material within a photomask. The dehumidifier includes a moisture inlet(211), a heater(260), and an outlet(212).

Description

반도체소자 제조를 위한 노광장비{Exposure apparatus for manufacturing semiconductor device}Exposure apparatus for manufacturing semiconductor devices

본 발명은 반도체소자 제조를 위한 노광장비에 관한 것이다.The present invention relates to an exposure apparatus for manufacturing a semiconductor device.

최근 반도체소자가 고집적화되면서 웨이퍼 상에 형성되는 패턴의 크기가 미세해지고 있다. 일반적으로 이러한 미세 패턴을 형성하기 위하여 포토마스크를 사용하는 포토리소그라피(photolithography) 공정이 이용되고 있다. 상기 포토리소그라피 공정에 따르면, 먼저 패턴을 형성하고자 하는 물질막 위에 포토레지스트막을 도포한다. 그리고 소정의 광차단패턴을 갖는 포토마스크를 이용한 노광공정을 수행하여 상기 포토레지스트막의 일부에 광을 주사한다. 다음에 현상액을 이용한 현상공정을 수행하여 포토레지스트막의 일부가 제거된 포토레지스트막패턴을 형성한다. 이후 포토레지스트막패턴을 식각마스크로 한 식각공정으로 물질막의 노출부분을 제거함으로써, 포토마스크의 광차단패턴에 대응되는 물질막패턴을 형성할 수 있다.Recently, as semiconductor devices have been highly integrated, the size of patterns formed on wafers has become smaller. In general, a photolithography process using a photomask is used to form such a fine pattern. According to the photolithography process, first, a photoresist film is coated on the material film on which the pattern is to be formed. An exposure process using a photomask having a predetermined light blocking pattern is performed to scan light onto a portion of the photoresist film. Next, a developing process using a developing solution is performed to form a photoresist film pattern from which a part of the photoresist film is removed. Thereafter, the exposed portion of the material film is removed by an etching process using the photoresist film pattern as an etching mask, thereby forming a material film pattern corresponding to the light blocking pattern of the photomask.

그런데 이와 같은 포토리소그라피 공정을 수행하는데 있어서, 포토마스크에 이물질이 있는 경우 이 이물질이 포토레지스트막에 전사되어 원하는 프로파일의 포토레지스트막패턴을 형성할 수 없으며, 이에 따라 물질막에도 원하지 않는 패턴이 형성될 수 있다. 따라서 포토마스크의 이물질을 제거하기 위하여 포토마스크에 대해 세정공정을 수행하여야 한다. 통상적으로 포토마스크에 대한 세정공정은 세정액을 이용하여 수행한다. 그런데 세정액을 이용한 세정에 의해 포토마스크상의 이물질이나 원하지 않는 잔류물(residue)은 제거할 수 있지만, 세정과정에서 성장성 이물질의 원인, 예컨대 (NH4)2SO4란 염이 발생된다는 문제가 있다. 이와 같은 (NH4)2SO4란 염은 노광시 빛의 촉매에 의한 에너지가 첨가되고 노광장비 내의 수분을 끌여들여 노광을 하면 할수록 점점 커지는 성장성 이물질로 작용한다. 이와 같은 성장성 이물질은, 앞서 설명한 바와 같이, 원하지 않는 패턴전사를 야기한다.However, in performing the photolithography process, when there is foreign matter in the photomask, the foreign matter is transferred to the photoresist film to form a photoresist film pattern having a desired profile, thereby forming an unwanted pattern in the material film. Can be. Therefore, the cleaning process must be performed on the photomask in order to remove foreign substances from the photomask. Typically, the cleaning process for the photomask is performed using a cleaning liquid. By the use of a cleaning solution, however, foreign matters and unwanted residues on the photomask can be removed, but there is a problem that a cause of growth foreign matters, such as (NH 4 ) 2 SO 4 , is generated during the cleaning process. Such (NH 4 ) 2 SO 4 silane salt acts as a growth foreign substance that increases as the energy is added by the catalyst of light during exposure and the moisture is drawn in the exposure equipment. Such growth foreign matter causes unwanted pattern transfer, as described above.

본 발명이 해결하고자 하는 과제는 노광중 성장성 이물의 발생이 억제되도록 하는 반도체소자 제조를 위한 노광장비를 제공하는 것이다.The problem to be solved by the present invention is to provide an exposure apparatus for manufacturing a semiconductor device to suppress the generation of growthable foreign matter during exposure.

본 발명에 따른 노광장비는, 포토마스크에 광을 투과하여 웨이퍼상의 포토레지스트막에 대한 노광을 수행하기 위한 것으로서, 노광장비의 일 측면에 부착되어 노광중 포토마스크상의 성장성 이물질의 원인으로의 수분공급이 억제되도록 노광장비 내부의 습기를 제거하는 제습장치를 포함한다.The exposure apparatus according to the present invention is for performing exposure to a photoresist film on a wafer by transmitting light through a photomask, and is attached to one side of the exposure apparatus to supply moisture to a cause of growth foreign matter on the photomask during exposure. And a dehumidifier for removing moisture in the exposure apparatus so as to be suppressed.

상기 성장성 이물질의 원인은 염의 형태를 갖는다.The cause of the growth foreign matter is in the form of a salt.

상기 제습장치는, 노광장비 내의 습기를 빨아들이는 습기 유입구와, 습기 유입구에 의해 유입된 습기를 건조시키는 히터와, 그리고 히터에 의해 건조된 공기를 상기 노광장비 외부로 배출시키는 배출구를 포함할 수 있다.The dehumidifier may include a moisture inlet for sucking moisture in the exposure apparatus, a heater for drying the moisture introduced by the moisture inlet, and an outlet for discharging air dried by the heater to the outside of the exposure apparatus. have.

이 경우 습기 유입구 및 배출구의 개폐를 상호 선택적으로 조절하는 내부 셔터 및 외부 셔터를 더 구비할 수 있다.In this case, it may be further provided with an inner shutter and an outer shutter for selectively controlling the opening and closing of the moisture inlet and outlet.

그리고 노광장비 내의 습도를 체크하여 원하는 습도가 유지되도록 내부 셔터 및 외부 셔터를 제어하는 제어장치를 더 구비할 수도 있다.The apparatus may further include a controller for checking the humidity in the exposure apparatus to control the internal shutter and the external shutter to maintain a desired humidity.

본 발명에 따르면, 노광중에 노광장비 내의 수분을 제거하는 제습장치에 의해 포토마스크 내의 성장성 이물질 원인이 성장성 이물로 되는 것을 억제할 수 있 다는 이점이 제공된다.According to the present invention, the dehumidifying apparatus that removes moisture in the exposure equipment during exposure provides an advantage that the cause of the growth foreign matter in the photomask can be prevented from becoming a growth foreign matter.

도 1은 본 발명에 따른 반도체소자 제조를 위한 노광장비를 개략적으로 나타내 보인 도면이다.1 is a view schematically showing an exposure apparatus for manufacturing a semiconductor device according to the present invention.

도 1을 참조하면, 본 발명에 따른 노광장비(100)는, 외벽(110)에 의해 노광이 이루어지는 공간이 한정되는 구조로 이루어진다. 비록 도면에 나타내지는 않았지만, 외벽(110) 내의 공간에는 광원, 포토마스크 로딩장치, 렌즈시스템, 웨이퍼 지지대와 같이 통상의 노광공정에 요구되는 장치들이 배치된다. 노광장비(100)의 일 측면에는 제습장치(200)가 배치된다.Referring to FIG. 1, the exposure apparatus 100 according to the present invention has a structure in which a space where exposure is performed by the outer wall 110 is limited. Although not shown in the drawings, spaces in the outer wall 110 include devices required for a conventional exposure process such as a light source, a photomask loading device, a lens system, and a wafer support. The dehumidifier 200 is disposed at one side of the exposure apparatus 100.

제습장치(200)는 습기 유입구(211)와 배출구(212)를 포함한다. 습기 유입구(211)는 노광장비(100) 내부의 습기, 구체적으로 포토마스크 근처의 습기를 제습장치(200) 내부로 흡입시키기 위한 것이며, 배출구(212)는 제습장치(200)로 유입된 습기를 노광장비(100) 외부로 배출시키기 위한 것이다. 습기 유입구(211)는 제습장치(200)의 상판(221)과 내부측판(231) 사이와, 그리고 제습장치(200)의 하판(222)과 내부측판(231) 사이에 배치된다. 배출구(212)는 제습장치(200)의 상판(221)과 외부측판(232) 사이와, 그리고 제습장치(200)의 하판(222)과 외부측판(232) 사이에 배치된다.The dehumidifier 200 includes a moisture inlet 211 and the outlet 212. The moisture inlet 211 is for sucking moisture in the exposure apparatus 100, specifically, moisture near the photomask into the dehumidifier 200, and the outlet 212 may absorb moisture introduced into the dehumidifier 200. It is for discharging to the outside of the exposure equipment (100). The moisture inlet 211 is disposed between the upper plate 221 and the inner side plate 231 of the dehumidifier 200, and between the lower plate 222 and the inner side plate 231 of the dehumidifier 200. The outlet 212 is disposed between the upper plate 221 and the outer side plate 232 of the dehumidifier 200, and between the lower plate 222 and the outer side plate 232 of the dehumidifier 200.

습기 유입구(211)의 개폐를 위해 상판(221) 위에는 제1 내부셔터(241)가 배치되고 하판(222) 밑에는 제2 내부셔터(243)가 배치된다. 제1 내부셔터(241)가 아랫방향으로 이동하여 상판(221)에 접촉되면 상부의 습기 유입구(211)는 닫히지만, 제1 내부셔터(241)가 윗방향으로 이동하여 상판(221)으로부터 분리되면 상부의 습기 유입구(211)는 열리게 된다. 마찬가지로 제2 내부셔터(243)가 윗방향으로 이동하여 하판(222)에 접촉되면 하부의 습기 유입구(211)는 닫히지만, 제2 내부셔터(243)가 아래방향으로 이동하여 하판(222)으로부터 분리되면 하부의 습기 유입구(211)는 열리게 된다. 도면상에는 상부의 습기 유입구(211)는 열려있지만 하부의 습기 유입구(211)는 닫혀있는 상태만을 나타내었다.The first inner shutter 241 is disposed on the upper plate 221 and the second inner shutter 243 is disposed below the lower plate 222 to open and close the moisture inlet 211. When the first inner shutter 241 moves downward to contact the upper plate 221, the upper moisture inlet 211 is closed, but the first inner shutter 241 moves upward to separate from the upper plate 221. When the upper moisture inlet 211 is opened. Similarly, when the second inner shutter 243 moves upward to contact the lower plate 222, the lower moisture inlet 211 is closed, but the second inner shutter 243 moves downward to move from the lower plate 222. When separated, the lower moisture inlet 211 is opened. In the drawing, the upper moisture inlet 211 is open, but the lower moisture inlet 211 shows only a closed state.

배출구(212)의 개폐를 위해서는 상판(221) 위에 제1 외부셔터(242)가 배치되고 하판(222) 밑에는 제2 외부셔터(244)가 배치된다. 제1 외부셔터(242)가 아랫방향으로 이동하여 상판(221)에 접촉되면 상부의 배출구(212)는 닫히지만, 제1 외부셔터(242)가 윗방향으로 이동하여 상판(221)으로부터 분리되면 상부의 배출구(212)는 열리게 된다. 마찬가지로 제2 외부셔터(244)가 윗방향으로 이동하여 하판(222)에 접촉되면 하부의 배출구(212)는 닫히지만, 제2 외부셔터(244)가 아래방향으로 이동하여 하판(222)으로부터 분리되면 하부의 배출구(212)는 열리게 된다. 도면상에는 하부의 배출구(212)는 열려있지만 상부의 배출구(212)는 닫혀있는 상태만을 나타내었다.In order to open and close the outlet 212, a first external shutter 242 is disposed on the upper plate 221, and a second external shutter 244 is disposed below the lower plate 222. When the first external shutter 242 moves downward to contact the upper plate 221, the upper outlet 212 is closed, but when the first external shutter 242 moves upward and separated from the upper plate 221. The upper outlet 212 is opened. Similarly, when the second external shutter 244 moves upward to contact the lower plate 222, the lower outlet 212 is closed, but the second external shutter 244 moves downward to separate from the lower plate 222. When the lower outlet 212 is opened. In the figure, the lower outlet 212 is open, but the upper outlet 212 is shown only in a closed state.

비록 설명의 편의를 위해, 상부에는 습기 유입구(211)가 열려있고 배출구(212)가 닫혀있는 반면 하부에는 배출구(212)가 열려있고 습기 유입구(211)가 닫혀있는 상태를 설명하였지만, 상부의 습기 유입구(211)와 하부의 습기 유입구(211)는 동일한 상태가 되도록 조절되며, 마찬가지로 상부의 배출구(212)와 하부의 배출구(212) 또한 동일한 상태가 되도록 조절된다. 습기 유입구(211)와 배출구(212)의 개폐 동작을 제어하기 위해, 제1 내부셔터(241) 및 제2 내부셔터(243)와, 그리고 제1 외부셔터(242) 및 제2 외부셔터(244)의 동작을 제어하는 제어장치(250)가 배치된다.Although for convenience of description, it has been described that the moisture inlet 211 is open at the top and the outlet 212 is closed while the outlet 212 is open at the bottom and the moisture inlet 211 is closed. The inlet 211 and the lower moisture inlet 211 is adjusted to be in the same state, and similarly the upper outlet 212 and the lower outlet 212 is also adjusted to be in the same state. In order to control the opening / closing operation of the moisture inlet 211 and the outlet 212, the first internal shutter 241 and the second internal shutter 243, and the first external shutter 242 and the second external shutter 244. The control device 250 for controlling the operation of the) is arranged.

제습장치(200)의 내부에는 히터(260)이 배치되어, 습기 유입구(211)를 통해 유입되는 습기를 건조시킨다. 비록 도면에 나타내지는 않았지만, 히터(260) 주변으로 제습효율을 증대시키기 위하여 특수 흡습제를 분포시킬 수도 있다. 제습장치(200)의 하부에는 인터락된 팬(fan)(270)이 배치되어 제습장치(200) 내부에서의 수분이나 건조된 공기의 흐름을 제어한다.The heater 260 is disposed inside the dehumidifier 200 to dry the moisture introduced through the moisture inlet 211. Although not shown, a special moisture absorbent may be distributed around the heater 260 to increase the dehumidification efficiency. An interlocked fan 270 is disposed below the dehumidifier 200 to control the flow of moisture or dried air in the dehumidifier 200.

이와 같은 노광장비(100)를 이용한 노광과정을 설명하면, 먼저 통상의 노광을 수행하기 전에 노광장비(100) 내에서 포토마스크 주변의 습도를 체크한다. 체크된 습도는 제어장치(250)로 입력되고, 제어장치(250)는 포토마스크 주변의 바람직한 습도를 계산한다. 여기서 습도의 계산은, 포토마스크 내에 존재하는 성장성 이물질의 원인, 예컨대 (NH4)2SO4와 같은 염 성분이 습기를 노광에너지와 함께 흡수하여 성장성 이물질로 성장하는 것을 억제할 수 있을 정도의 습도를 계산함으로써 수행될 수 있다. 다음에 제어장치(250)는 제1 내부셔터(241) 및 제2 외부셔터(244)를 위로 이동시키는 동시에 제1 외부셔터(242) 및 제2 내부셔터(243)는 아래로 이동시킨다. 그러면 습기 유입구(211)는 열리고 배출구(212)는 닫힌다. 이 상태에서 포토마스크 주변에 계산된 습도만큼 유지되도록 포토마스크 주변의 습기를 습기 유입구(211)를 통해 제습장치(200) 내부로 유입시킨다. 그리고 제1 외부셔터(242) 및 제2 내부셔터(243)를 위로 이동시키는 동시에 제1 내부셔터(241) 및 제2 외부셔터(244)는 아래로 이동시킨다. 그러면 습기 유입구(211)는 닫히고 배출구(212)는 열린다. 그러면 제습장치(200) 내의 히터(260)에 의해 건조된 공기는 배출구(212)를 통해 노광장비(100) 외부로 배출되며, 이에 따라 노광중에 포토마스크 내의 성장성 이물의 원인이 성장성 이물질로 성장되는 것이 억제된다.Referring to the exposure process using such an exposure equipment 100, first check the humidity around the photomask in the exposure equipment 100 before performing a normal exposure. The checked humidity is input to the controller 250, which calculates the desired humidity around the photomask. Here, the humidity is calculated so that the cause of growth foreign matter present in the photomask, for example, a salt component such as (NH 4 ) 2 SO 4 , can absorb moisture with the exposure energy to suppress growth of the growth foreign matter. Can be performed by calculating. Next, the controller 250 moves the first internal shutter 241 and the second external shutter 244 upward while the first external shutter 242 and the second internal shutter 243 move downward. The moisture inlet 211 is then opened and the outlet 212 is closed. In this state, moisture around the photomask is introduced into the dehumidifier 200 through the moisture inlet 211 so as to maintain the humidity calculated around the photomask. The first external shutter 242 and the second internal shutter 243 are moved upward while the first internal shutter 241 and the second external shutter 244 are moved downward. The moisture inlet 211 is then closed and the outlet 212 is opened. Then, the air dried by the heater 260 in the dehumidifier 200 is discharged to the outside of the exposure apparatus 100 through the discharge port 212, so that the cause of the growth foreign matter in the photomask is grown as the growth foreign material during exposure. Is suppressed.

도 1은 본 발명에 따른 반도체소자 제조를 위한 노광장비를 개략적으로 나타내 보인 도면이다.1 is a view schematically showing an exposure apparatus for manufacturing a semiconductor device according to the present invention.

Claims (5)

포토마스크에 광을 투과하여 웨이퍼상의 포토레지스트막에 대한 노광을 수행하는 노광장비에 있어서,An exposure apparatus that transmits light to a photomask to perform exposure of a photoresist film on a wafer. 상기 노광장비의 일 측면에 부착되어 노광중 상기 포토마스크상의 성장성 이물질의 원인으로의 수분공급이 억제되도록 상기 노광장비 내부의 습기를 제거하는 제습장치를 포함하는 노광장비.And a dehumidifying apparatus attached to one side of the exposure apparatus to remove moisture in the exposure apparatus so that water supply to the cause of growth foreign matter on the photomask is suppressed during exposure. 제1항에 있어서,The method of claim 1, 상기 성장성 이물질의 원인은 염의 형태를 갖는 노광장비.The cause of the growth foreign matter is exposure equipment having the form of a salt. 제1항에 있어서, 상기 제습장치는,The dehumidifier of claim 1, 상기 노광장비 내의 습기를 빨아들이는 습기 유입구;A moisture inlet for sucking moisture in the exposure apparatus; 상기 습기 유입구에 의해 유입된 습기를 건조시키는 히터; 및A heater to dry the moisture introduced by the moisture inlet; And 상기 히터에 의해 건조된 공기를 상기 노광장비 외부로 배출시키는 배출구를 포함하는 노광장비.And an outlet for discharging the air dried by the heater to the outside of the exposure apparatus. 제3항에 있어서,The method of claim 3, 상기 습기 유입구 및 배출구의 개폐를 상호 선택적으로 조절하는 내부 셔터 및 외부 셔터를 더 구비하는 노광장비.Exposure apparatus further comprising an internal shutter and an external shutter for selectively controlling the opening and closing of the moisture inlet and outlet. 제4항에 있어서,The method of claim 4, wherein 상기 노광장비 내의 습도를 체크하여 원하는 습도가 유지되도록 상기 내부 셔터 및 외부 셔터를 제어하는 제어장치를 더 구비하는 노광장비.And a control device for checking the humidity in the exposure apparatus and controlling the internal shutter and the external shutter to maintain a desired humidity.
KR1020080032269A 2008-04-07 2008-04-07 Exposure apparatus for manufacturing semiconductor device KR20090106876A (en)

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