JP5584176B2 - Development processing apparatus, development processing method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a substrate development processing apparatus, a development processing method, a program, and a computer storage medium.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process is performed on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and a predetermined pattern is exposed on the resist film. An exposure process, a development process for developing the exposed resist film, and the like are sequentially performed to form a predetermined resist pattern on the wafer.

  In the development processing described above, for example, an alkaline TMAH developer (tetramethylammonium hydroxide developer) is supplied onto the wafer to form a developer liquid film on the wafer surface, whereby the wafer is developed. (Patent Document 1).

JP 2006-32604 A

  In recent years, when the above-described resist pattern is formed, the resist pattern is required to be miniaturized in order to achieve higher integration of semiconductor devices. Further, in order to form such a fine resist pattern with high dimensional accuracy, it is required to develop the resist film with higher accuracy in the development processing described above.

  Here, in the development process described in Patent Document 1, since an alkaline TMAH developer is supplied onto the wafer, the resist film exposed by the developer is dissolved. Then, in the exposure process, a portion where the resist film dissolves (a trench portion of the resist pattern) is exposed, and thus the resist film is exposed using a mask in which an opening corresponding to the portion is formed. In such a case, as the resist pattern trenches become finer, the opening of the mask also becomes finer. Therefore, light exposure or the like occurs in the opening of the mask in the exposure process, resulting in insufficient exposure contrast. As a result, the resist film cannot be exposed and developed with high accuracy, and the resist pattern may not have a desired shape.

  Therefore, the inventors considered using a developer containing an organic solvent. When this developer is supplied onto the wafer, the unexposed resist film is dissolved, and the exposed resist film remains as a resist pattern. For this reason, the opening part of the mask of exposure processing can be enlarged, and exposure contrast can be improved.

  However, a developer containing an organic solvent has the property that it volatilizes more easily than a conventional alkaline developer. As the developer is volatilized and dried, the resist component may precipitate again, resulting in development defects. Further, in order to compensate for the volatilization of the developer, a large amount of developer may be required.

  The present invention has been made in view of this point, and an object thereof is to appropriately form a resist pattern on a resist film while developing the resist film on the substrate with high accuracy.

In order to achieve the above object, the present invention provides a substrate development processing apparatus, a processing container for accommodating and processing a substrate, a substrate holding part for holding a substrate in the processing container, and the substrate holding part. On the substrate held on the substrate, a developer supply unit for supplying a developer containing an organic solvent, a gas supply unit for supplying a processing gas into the processing container, and a processing gas flowing out of the processing container are processed again. A gas circulation unit that supplies and circulates into the container, and a gas diffusion unit that is provided in the processing container and above the substrate holding unit, and diffuses the processing gas from the gas supply unit and supplies the processing gas into the processing container And a plurality of supply ports to which the processing gas is supplied are formed on the surface of the gas diffusion part on the substrate holding part side .

  According to the present invention, since the developer supplied onto the substrate from the developer supply unit contains an organic solvent, it is possible to dissolve the unexposed resist film and form the exposed resist film as a resist pattern. it can. For this reason, even if the desired dimension of the resist pattern is fine, the mask opening in the exposure process can be enlarged, so that the exposure contrast is improved. Therefore, it is possible to develop the resist film with high accuracy and improve the dimensional accuracy of the resist pattern formed on the resist film. Further, since the development processing apparatus includes a gas supply unit that supplies a processing gas into the processing container, the processing container during the development processing can be filled with the processing gas. This processing gas can suppress the volatilization of the developer. Furthermore, since the development processing apparatus has a gas circulation part for circulating the processing gas, an air flow of the processing gas can be formed in the processing container. This process gas stream can further suppress the volatilization of the developer. Thus, since the volatilization of the developer can be suppressed, development defects can be suppressed. In addition, the supply amount of the developer can be reduced by suppressing the volatilization of the developer. Furthermore, since the processing gas is circulated by the gas circulation unit, the processing gas can be effectively used. As described above, according to the present invention, it is possible to appropriately form a resist pattern in which development defects are suppressed while developing a resist film on a substrate with high accuracy.

  The processing gas may be a vaporized organic solvent.

  The development processing apparatus includes a concentration measuring device that measures the concentration of the processing gas in the processing container, and a control unit that controls the gas supply unit so that the concentration of the processing gas becomes a predetermined concentration. It may be.

  The development processing apparatus may include another gas supply unit that supplies an inert gas in the processing container.

  The processing gas may be an inert gas, and the inside of the processing container may be maintained at a predetermined pressure by the processing gas.

  The development processing apparatus includes a pressure measuring device that measures the pressure of the processing gas in the processing container, and a control unit that controls the gas supply unit so that the pressure of the processing gas becomes the predetermined pressure. You may do it.

  The gas supply unit may be provided with a temperature adjustment mechanism for adjusting the temperature of the processing gas.

  The development processing apparatus includes a cup provided so as to surround a side of the substrate held by the substrate holding unit in the processing container, and the gas circulation unit receives the processing gas flowing out of the cup. You may circulate in the said processing container.

  The development processing apparatus may include a rinsing liquid supply unit that supplies a rinsing liquid of a developing solution on the substrate held by the substrate holding unit.

According to another aspect of the present invention, there is provided a method for developing a substrate, wherein a supply port for supplying a processing gas is provided in a processing container for storing a substrate and above a substrate holding portion for holding the substrate. gas diffusion portion which is plurally formed on the surface of the part side is provided, the process by accommodating the substrate in a container, wherein after the substrate is held in a substrate holder, wherein the processing gas from the gas supply unit gas diffusion portion a gas supply step in by diffusing subjected supply into the processing chamber, then, on the substrate held by the substrate holding unit and a developing step of supplying a developer containing an organic solvent for developing process In the development processing step, the processing gas flowing out from the processing container is supplied again into the processing container and circulated.

  The processing gas may be a vaporized organic solvent.

  In the development processing step, the concentration of the processing gas in the processing container may be maintained at a predetermined concentration.

  The processing gas is an inert gas, and in the development processing step, the inside of the processing container may be maintained at a predetermined pressure by the processing gas.

  In the development processing step, the processing gas supplied to the processing container may be adjusted to a predetermined temperature.

  The development processing method may include a rinsing step of supplying a rinsing liquid of the developer onto the substrate held by the substrate holding unit after the development processing step.

  An inert gas may be supplied into the processing container during the rinsing step.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the development processing apparatus in order to cause the development processing apparatus to execute the development processing method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, it is possible to appropriately form a resist pattern on a resist film while developing the resist film on the substrate with high accuracy.

It is a top view which shows the outline of the internal structure of the coating development processing system provided with the development processing apparatus concerning this Embodiment. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. It is a longitudinal cross-sectional view which shows the outline of a structure of a development processing apparatus. It is a cross-sectional view which shows the outline of a structure of a development processing apparatus. It is a flowchart which shows the main processes of development processing. It is a longitudinal cross-sectional view which shows the outline of a structure of the image development processing apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the image development processing apparatus concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of an internal configuration of a coating and developing treatment system 1 including a developing treatment apparatus according to the present invention. 2 and 3 are side views showing an outline of the internal configuration of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 includes, for example, a cassette station 2 in which a cassette C containing a plurality of wafers W is carried in and out, and a predetermined single-wafer type in a photolithography process. It has a configuration in which a processing station 3 including a plurality of various processing apparatuses that perform processing and an interface station 5 that transfers the wafer W between the exposure apparatus 4 adjacent to the processing station 3 are integrally connected. .

  The cassette station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). The cassette C can be placed on these cassette placement plates 11 when the cassette C is carried into and out of the coating and developing treatment system 1.

  The cassette station 2 is provided with a wafer transfer device 21 that is movable on a transfer path 20 extending in the X direction as shown in FIG. The wafer transfer device 21 is also movable in the vertical direction and the vertical axis direction (θ direction), and the cassette C on each cassette mounting plate 11 and a delivery device for a third block G3 of the processing station 3 to be described later. The wafer W can be transferred between the two.

  The processing station 3 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices. For example, the first block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and the second side is provided on the back side of the processing station 3 (X direction positive direction side in FIG. 1). Block G2 is provided. Further, a third block G3 is provided on the cassette station 2 side (Y direction negative direction side in FIG. 1) of the processing station 3, and the processing station 3 interface station 5 side (Y direction positive direction side in FIG. 1). Is provided with a fourth block G4.

  For example, in the first block G1, as shown in FIG. 3, a plurality of liquid processing apparatuses, for example, a development processing apparatus 30 for developing the wafer W, an antireflection film (hereinafter referred to as “lower reflection” below the resist film of the wafer W). A lower anti-reflection film forming apparatus 31 for forming an anti-reflection film), a resist coating apparatus 32 for applying a resist solution to the wafer W to form a resist film, and an anti-reflection film (hereinafter referred to as “an anti-reflection film”). An upper antireflection film forming device 33 for forming an “upper antireflection film” is stacked in order from the bottom.

  For example, the development processing device 30 and the resist coating device 32 are arranged in three layers in the horizontal direction and two layers in the vertical direction, respectively. For example, three lower antireflection film forming apparatuses 31 and three upper antireflection film forming apparatuses 33 are arranged in the horizontal direction. The number and arrangement of the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 can be arbitrarily selected.

  For example, in the second block G2, as shown in FIG. 2, there are a heat treatment apparatus 40 for performing heat treatment of the wafer W, an adhesion apparatus 41 for hydrophobizing the wafer W, and a peripheral exposure apparatus 42 for exposing the outer peripheral portion of the wafer W. They are arranged side by side in the vertical and horizontal directions. The heat treatment apparatus 40 includes a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment. In addition, the number and arrangement | positioning of the heat processing apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 can be selected arbitrarily.

  For example, in the third block G3, a plurality of delivery devices 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. The fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.

  As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. For example, a wafer transfer device 70 is disposed in the wafer transfer region D.

  The wafer transfer device 70 has a transfer arm that is movable in the Y direction, the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  For example, as shown in FIG. 2, a plurality of wafer transfer apparatuses 70 are arranged in the vertical direction, and can transfer the wafer W to a predetermined apparatus having the same height of each of the blocks G1 to G4, for example.

  Further, in the wafer transfer region D, a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.

  The shuttle transport device 80 is movable linearly in the Y direction, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

  As shown in FIG. 1, a wafer transfer device 90 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer device 90 has a transfer arm that is movable in the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 90 moves up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.

  The interface station 5 is provided with a wafer transfer device 100 and a delivery device 101. The wafer transfer apparatus 100 has a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction, for example. The wafer transfer apparatus 100 can transfer the wafer W between each transfer apparatus, the transfer apparatus 101, and the exposure apparatus 4 in the fourth block G4, for example, by supporting the wafer W on a transfer arm.

  Next, the configuration of the development processing apparatus 30 described above will be described. The development processing apparatus 30 includes a processing container 110 that can be hermetically sealed as shown in FIG. Since the inside of the processing container 110 may be in an atmosphere higher than the flash point of butyl acetate gas described later, the processing container 110 has an explosion-proof specification. Further, as shown in FIG. 5, a loading / unloading port 111 for the wafer W is formed on one side surface of the processing container 110, and an opening / closing shutter 112 is provided at the loading / unloading port 111.

  As shown in FIG. 4, an exhaust pipe 113 for exhausting the atmosphere inside the processing container 110 is connected to the bottom surface of the processing container 110. The exhaust pipe 113 communicates with a negative pressure generator (not shown) such as a vacuum pump via a valve 114.

  A gas diffusion unit 120 is provided on the ceiling surface in the processing container 110. A processing gas supply unit 122 serving as a gas supply unit that supplies a processing gas into the processing container 110 is connected to the gas diffusion unit 120 via a supply pipe 121. In this embodiment, an evaporated organic solvent such as butyl acetate gas is used as the processing gas. The processing gas supply unit 122 stores liquid butyl acetate therein. In the processing gas supply unit 122, liquid butyl acetate is vaporized by supplying nitrogen gas therein, and butyl acetate gas is generated. Further, the supply pipe 121 is provided with a valve 123 for controlling the flow of butyl acetate gas generated by the processing gas supply unit 122. Further, in the supply pipe 121, a check valve 124 for preventing the butyl acetate gas from flowing back to the processing gas supply unit 122 is provided on the processing gas supply unit 122 side from a circulation path 150 described later.

  In addition, a purge gas supply unit 126 as another gas supply unit that supplies a purge gas for purging the inside of the processing container 110 is connected to the gas diffusion unit 120 through a supply pipe 125. In the present embodiment, an inert gas such as nitrogen gas is used as the purge gas. The purge gas supply unit 126 stores nitrogen gas therein. The supply pipe 125 is provided with a valve 127 that controls the flow of nitrogen gas from the purge gas supply unit 126. The supply pipe 121 and the supply pipe 125 merge on the downstream side and are connected to the gas diffusion unit 120.

  Inside the gas diffusion unit 120, an internal space 128 into which butyl acetate gas supplied from the processing gas supply unit 122 or nitrogen gas supplied from the purge gas supply unit 126 is introduced is provided. A plurality of supply ports 129 for supplying butyl acetate gas and nitrogen gas introduced into the internal space 128 into the processing container 110 are formed on the lower surface (the surface on the wafer W side) of the gas diffusion portion 120. The plurality of supply ports 129 are formed so as to be uniformly distributed over the entire lower surface of the gas diffusion unit 120. The gas diffusion unit 120 is arranged so that butyl acetate gas or nitrogen gas in the internal space 128 is supplied through the plurality of supply ports 129 and diffuses throughout the interior of the processing vessel 110. Further, through the gas supply unit 120, butyl acetate gas and nitrogen gas can be uniformly supplied onto a wafer W held by a spin chuck 140 described later.

  The processing container 110 is provided with a concentration measuring device 130 that measures the concentration of butyl acetate gas in the processing container 110. The measurement result of the concentration measuring device 130 is output to the concentration control unit 131. In the concentration control unit 131, based on the measurement result, for example, the valve 123 and the valve 114, or a gas circulation unit 151 and a valve 153, which will be described later, so that the concentration of butyl acetate gas becomes a predetermined concentration, for example, 1% to 20%. To control. The predetermined concentration is set so that, for example, the volatilization rate of the developer in the processing container 110 is, for example, 10% or less with respect to the volatilization rate of the developer under normal pressure. The predetermined concentration is set according to the type of resist and the type of organic solvent.

  A spin chuck 140 serving as a substrate holding unit that holds and rotates the wafer W is provided inside the processing container 110 and below the gas diffusion unit 120. The spin chuck 140 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the spin chuck 140 by suction from the suction port.

  The spin chuck 140 includes a chuck driving unit 141 including a motor, for example, and can be rotated at a predetermined speed by the chuck driving unit 141. Further, the chuck driving unit 141 is provided with an elevating drive source such as a cylinder, and the spin chuck 140 can move up and down.

  A guide ring 142 having a mountain shape in cross section is provided below the spin chuck 140, and a peripheral portion of the guide ring 142 is bent downward and extends. Around the spin chuck 140, the wafer W held by the spin chuck 140 and the guide ring 142, a cup 143 is provided for receiving and collecting the liquid scattered or dropped from the wafer W.

  The cup 143 has an opening on the top surface that is larger than the wafer W so that the spin chuck 140 can move up and down, and a gap 144 that forms a discharge path is formed between the side peripheral surface and the peripheral portion of the guide ring 142. Has been. The lower part of the cup 143 forms a curved path together with the peripheral part of the guide ring 142 to constitute a gas-liquid separation part.

  A circulation path 150 for circulating butyl acetate gas in the cup 143 (in the processing container 110) is connected to the inner region of the bottom of the cup 143. The circulation path 150 may be provided at a plurality of locations with respect to the bottom of the cup 143, or may be provided in an annular shape. The circulation path 150 is connected to a supply pipe 121 for butyl acetate gas. Further, the circulation path 150 is provided with a gas circulation section 151 for circulating the butyl acetate gas in the cup 143 to the supply pipe 121 and further circulating it in the processing vessel 110. For example, a fan is used for the gas circulation unit 151.

  Further, an exhaust pipe 152 for exhausting the atmosphere in the cup 143 is connected to the inner region of the bottom of the cup 143. The exhaust pipe 152 communicates with a negative pressure generator (not shown) such as a vacuum pump via a valve 153.

  Further, a drainage pipe 154 for discharging the liquid collected by the cup 143 is connected to the outer region of the bottom of the cup 143. The drainage pipe 154 communicates with a waste liquid container 155 that temporarily stores the collected waste liquid. The waste liquid container 155 communicates with a waste liquid recovery apparatus (not shown) outside the coating and developing treatment system 1 via a valve (not shown).

  Inside the processing container 110 and above the spin chuck 140, a developer nozzle 160 as a developer supply unit that supplies the developer onto the wafer W is disposed. A supply pipe 162 communicating with the developer supply source 161 is connected to the developer nozzle 160. In the developer supply source 161, a developer containing an organic solvent, for example, butyl acetate, a so-called organic developer is stored. The supply pipe 162 is provided with a valve 163 that controls the flow of the developing solution.

  Further, a rinsing liquid nozzle 164 serving as a rinsing liquid supply unit that supplies a rinsing liquid of the developer onto the wafer W is disposed inside the processing container 110 and above the spin chuck 140. A supply pipe 166 communicating with the rinse liquid supply source 165 is connected to the rinse liquid nozzle 164. In the rinse liquid supply source 161, the rinse liquid of the developer is stored. In the present embodiment, for example, MIBC (methyl amyl alcohol) is used as the rinse liquid. MIBC can be discharged after replacing the organic solvent in the developer without damaging the resist. The supply pipe 166 is provided with a valve 167 that controls the flow of the rinse liquid.

  The developer nozzle 160 is connected to a nozzle driving unit 169 via an arm 168 as shown in FIG. The arm 168 is moved outside the positive side of the cup 143 in the Y direction (right direction in FIG. 5) along the guide rail 170 extending in the Y direction (left and right direction in FIG. 5) by the nozzle driving unit 169. It is possible to move from the standby part 171 provided on the side to the upper part of the center of the wafer W in the cup 143, and further to move in the radial direction of the wafer W on the surface of the wafer W. The arm 168 can be moved up and down by a nozzle driving unit 169, and the height of the developer nozzle 160 can be adjusted.

  Similarly, the rinse liquid nozzle 164 is also connected to the nozzle drive unit 173 via the arm 172. The arm 172 is moved by the nozzle driving unit 173 along the guide rail 170 from the standby unit 174 provided on the outer side on the Y direction negative direction side (left direction in FIG. 5) of the cup 143 to the wafer W in the cup 143. It can move to the upper part of the center of the wafer W and can move in the radial direction of the wafer W on the surface of the wafer W. The arm 172 can be moved up and down by the nozzle driving unit 173, and the height of the rinsing liquid nozzle 164 can be adjusted.

  In the above configuration, the developer nozzle 160 that supplies the developer and the rinse liquid nozzle 164 that supplies the rinse liquid are supported by separate arms, but are supported by the same arm, and the movement of the arms is controlled. The movement and supply timing of the developing solution nozzle 160 and the rinsing solution nozzle 164 may be controlled.

  The coating and developing processing system 1 is provided with a control unit 200 as shown in FIG. The control unit 200 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for executing development processing of the wafer W in the development processing apparatus 30. In addition to this, the program storage unit controls the transfer of the wafer W between the cassette station 2, the processing station 3, the exposure apparatus 4, and the interface station 5, the operation of the drive system in the processing station 3, and the like. A program for executing wafer processing in the development processing system 1 is stored. This program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 200 from the storage medium H. The density control unit 131 described above may be configured as a part of the control unit 200, or the density control unit 131 and the control unit 200 may be provided separately.

  Next, a processing method of the wafer W performed using the coating and developing processing system 1 configured as described above will be described.

  First, a cassette C containing a plurality of wafers W is placed on a predetermined cassette placement plate 11 of the cassette station 2. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 21 and transferred to, for example, the transfer device 53 of the third block G3 of the processing station 3.

  Next, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70, and the temperature is adjusted. Thereafter, the wafer W is transferred to the lower antireflection film forming device 31 of the first block G1 by the wafer transfer device 70, and a lower antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, heated, temperature-controlled, and then returned to the transfer apparatus 53 of the third block G3.

  Next, the wafer W is transferred by the wafer transfer device 90 to the delivery device 54 of the same third block G3. Thereafter, the wafer W is transferred to the adhesion device 41 of the second block G2 by the wafer transfer device 70 and subjected to an adhesion process. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and the temperature is adjusted.

  Thereafter, the wafer W is transferred by the wafer transfer apparatus 70 to the resist coating apparatus 32 of the first block G1, and a resist solution is applied onto the rotating wafer W, so that a resist film is formed on the wafer W. As the resist solution, for example, a chemically amplified resist solution is used.

  Thereafter, the wafer W is transferred by the wafer transfer apparatus 70 to the heat treatment apparatus 40 of the second block G2, and is pre-baked. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the delivery device 55 of the third block G3.

  Next, the wafer W is transferred to the upper antireflection film forming apparatus 33 of the first block G1 by the wafer transfer apparatus 70, and an upper antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70, heated, and the temperature is adjusted.

  Next, the wafer W is transferred to the peripheral exposure device 42 by the wafer transfer device 70 and subjected to peripheral exposure processing. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the delivery device 56 of the third block G3.

  Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 90 and transferred to the transfer device 62 of the fourth block G4 by the shuttle transfer device 80.

  Thereafter, the wafer W is transferred to the exposure apparatus 4 by the wafer transfer apparatus 100 of the interface station 5 and subjected to exposure processing.

  Next, the wafer W is transferred from the exposure apparatus 4 to the delivery apparatus 60 of the fourth block G4 by the wafer transfer apparatus 100. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to the development processing device 30 of the first block G1 by the wafer transfer device 70 and subjected to development processing. The development processing of the wafer W in this development processing apparatus will be described in detail later.

  Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70 and subjected to a post-bake process.

  Thereafter, the wafer W is transferred to the delivery device 50 of the third block G3 by the wafer transfer device 70, and then transferred to the cassette C of the predetermined cassette mounting plate 11 by the wafer transfer device 21 of the cassette station 2. Thus, a series of photolithography steps is completed.

  Next, a series of development processes for developing the resist film on the wafer W in the above-described development processing apparatus 30 will be described. FIG. 6 is a flowchart showing the main steps of the wafer W development process.

  The wafer W carried into the development processing apparatus 30 is first sucked and held by the spin chuck 140 (step S1 in FIG. 6). Thereafter, the shutter 111 is closed, and the inside of the processing container 110 is sealed. Subsequently, the valve 123 is opened, and butyl acetate gas is supplied from the processing gas supply unit 122 into the processing container 110 (step S2 in FIG. 6). At this time, the butyl acetate gas from the processing gas supply unit 122 is supplied into the processing container 110 from the plurality of supply ports 129 of the gas diffusion unit 120, so that it diffuses throughout the processing container 110. The butyl acetate gas is uniformly supplied to the wafer W held on the spin chuck 140.

  The supply of butyl acetate gas from the processing gas supply unit 122 is controlled by the concentration measuring device 130 and the concentration control unit 131. That is, the concentration measuring device 130 measures the concentration of butyl acetate gas in the processing container 110. Then, the concentration controller 131 controls the valve 123 based on the measurement result so that the gas concentration becomes a predetermined concentration, for example, 1% to 20% (step S3 in FIG. 6). By controlling the gas concentration in the processing container 110 to a predetermined concentration in this way, the volatilization rate of the developer supplied into the processing vessel 110 is 10% or less with respect to the volatilization rate of the developing solution under normal pressure. Thus, volatilization of the developer is suppressed. In order to prevent the butyl acetate gas from leaking out of the processing container 110, the pressure of the butyl acetate gas in the processing container 110 is preferably a negative pressure.

  When the atmosphere in the processing chamber 110 is replaced with butyl acetate gas having a predetermined gas concentration, the arm 168 moves the developer nozzle 160 of the standby unit 171 to above the center of the wafer W. Thereafter, the developer is supplied onto the wafer W from the developer nozzle 160 while rotating the wafer W at a predetermined rotational speed by the spin chuck 140. The supplied developer is diffused over the entire surface of the wafer W by centrifugal force. After a predetermined time has elapsed, the exposed resist film on the wafer W is developed with a developer (step S4 in FIG. 6). That is, the resist film not exposed by the developer is dissolved, and the exposed resist film remains as a resist pattern.

  In step S4, butyl acetate gas in the cup 143 (in the processing container 110) is circulated to the supply pipe 121 via the circulation path 150 by the gas circulation unit 151. That is, the butyl acetate gas supplied into the processing container 110 is reused without being exhausted. In step S4, in principle, the valve 123 is closed to stop the supply of butyl acetate gas, and the valves 114 and 153 are closed to stop the exhaust from the processing container 110 and the cup 143. The concentration of butyl acetate gas in the processing container 110 is maintained at a predetermined concentration. Also in step S4, the concentration of the butyl acetate gas in the processing vessel 110 is measured by the concentration measuring device 130. For example, when the gas concentration deviates from a predetermined concentration due to an external factor or the like, Supply or exhaust is performed to control the gas concentration in the processing container 110.

  In step S4, as described above, a flow of butyl acetate gas to the circulation path 150 is generated in the cup 143. Due to this air flow, mist generated from the wafer W is prevented from scattering into the processing container 110. Further, it is possible to suppress the liquid scattered from the wafer W from adhering to the inner surface of the cup 143 by the air flow of butyl acetate gas. For this reason, the maintenance frequency of the cup 143 can be reduced. Furthermore, in step S4, the waste liquid collected in the cup 143 is temporarily stored in the waste liquid container 155. That is, by providing the waste liquid container 155, it is possible to recover the waste liquid in the cup 143 while controlling the atmosphere in the processing container 110.

  When the resist film on the wafer W is thus developed, the developer nozzle 160 is moved from the upper center of the wafer W to the standby unit 171 by the arm 168. At the same time, the rinse liquid nozzle 164 of the standby unit 174 is moved to above the center of the wafer W by the arm 172. Then, while rotating the wafer W, the rinse liquid is supplied from the rinse liquid nozzle 164 to the central portion of the wafer W, and the wafer W is rinsed (step S5 in FIG. 6).

  In this step S5, the valve 123 is closed and the gas circulation unit 151 is stopped to stop the supply of butyl acetate gas into the processing vessel 110. At the same time, the valve 127 is opened, and nitrogen gas is supplied from the purge gas supply unit 126 into the processing container 110 (step S6 in FIG. 6). Further, the valves 114 and 153 are opened, and the atmosphere in the processing container 110 and the cup 143 is exhausted from the exhaust pipes 113 and 152. Thus, the atmosphere in the processing container 110 is replaced with nitrogen gas. The reason why the atmosphere in the processing container 110 is replaced with nitrogen gas during the rinsing process in step S5 is to prevent the development of the resist film on the wafer W from proceeding with the butyl acetate gas remaining in the processing container 110. Because.

  Further, in step S5, the valve on the downstream side of the waste liquid container 155 is opened, and the waste liquid stored in the waste liquid container 155 is collected by a waste liquid collection device outside the coating and developing treatment system 1.

  After rinsing the wafer W, the supply of the rinsing liquid from the rinsing liquid nozzle 164 is stopped and the wafer W is rotated at an accelerated speed, and the rinsing liquid on the wafer W is shaken off and dried (step S7 in FIG. 6). . Thereafter, the inside of the processing container 110 is opened to the atmosphere, and the wafer W is unloaded from the development processing apparatus 30 (step S8 in FIG. 6). Thus, a series of development processing of the wafer W is completed.

  According to the above embodiment, in step S4, since the developer supplied from the developer nozzle 160 onto the wafer W contains the organic solvent, the unexposed resist film is dissolved and the exposed resist film is obtained. Can be formed as a resist pattern. For this reason, even if the desired dimension of the resist pattern is fine, the mask opening in the exposure process can be enlarged, so that the exposure contrast is improved. Therefore, it is possible to develop the resist film with high accuracy and improve the dimensional accuracy of the resist pattern formed on the resist film.

  Further, in step 4, since the atmosphere in the processing container 110 can be maintained at a predetermined concentration of butyl acetate gas by the concentration measuring device 130 and the concentration control unit 131, the developing solution supplied onto the wafer W from the developing solution nozzle 160. Volatilization can be suppressed. Moreover, since the butyl acetate gas supplied into the processing container 110 is supplied via the gas diffusion unit 120, it diffuses throughout the processing container 110. For this reason, the atmosphere in the processing container 110 is uniformly an atmosphere of butyl acetate gas having a predetermined concentration. The butyl acetate gas is uniformly supplied onto the wafer W held on the spin chuck 140. Therefore, it is possible to suppress development defects by suppressing the volatilization of the developer. Furthermore, by suppressing the volatilization of the developing solution, the supply amount of the developing solution can be reduced.

  In addition, in step S4, since the butyl acetate gas in the cup 143 (in the processing container 110) is circulated to the supply pipe 121 by the gas circulation unit 151, a flow of butyl acetate gas can be formed, and development can be performed by this air flow. The volatilization of the liquid can be further suppressed. In addition, butyl acetate gas can be used effectively. Therefore, a resist pattern can be appropriately formed on the wafer W.

  Further, during the rinsing process of the wafer W in step S5, the atmosphere in the processing container 110 is replaced with nitrogen gas in step S6, so that the resist film on the wafer W is not excessively developed by the butyl acetate gas. Therefore, a resist pattern can be more appropriately formed on the wafer W.

  The development processing apparatus 30 of the above embodiment may be provided with a temperature adjustment mechanism 250, for example, a heater, for adjusting the temperature of the butyl acetate gas supplied into the processing container 110, as shown in FIG. The temperature adjustment mechanism 250 is provided in the supply pipe 120. Note that the temperature adjustment mechanism 250 is not limited to this embodiment, and may be provided at an arbitrary place. For example, the temperature adjustment mechanism 250 may be provided in the gas diffusion unit 120 or in the processing gas supply unit 122.

  In such a case, since the temperature of the butyl acetate gas is adjusted to a predetermined temperature, the butyl acetate gas can be cooled and liquefied, and the inside of the supply pipe 121 and the gas diffusion unit 120 can be prevented from condensing. Accordingly, the gas concentration of the butyl acetate gas in the processing container 110 can be appropriately maintained at a predetermined concentration, and the volatilization of the developer can be appropriately suppressed. In addition, the maintenance frequency of the development processing apparatus 30 can be reduced.

  In the above embodiment, butyl acetate gas is used as the processing gas, but other processing gases may be used. For example, a vaporized organic solvent other than butyl acetate gas, such as 2-heptanone, may be used.

  Further, an inert gas such as nitrogen gas (or argon gas) may be used as the processing gas. In this case, as shown in FIG. 8, a processing gas supply unit 301 that supplies nitrogen gas into the processing container 110 is connected to the gas diffusion unit 120 of the development processing apparatus 30 via the supply pipe 300. The processing gas supply unit 301 stores nitrogen gas therein. Further, the supply pipe 300 is provided with a valve 302 that controls the flow of nitrogen gas from the processing gas supply unit 301. Further, a circulation path 150 is connected to the supply pipe 300. In the supply pipe 300, a check valve 303 that prevents the nitrogen gas from flowing back to the processing gas supply unit 301 is provided on the processing gas supply unit 301 side from the circulation path 150. In this embodiment, the supply pipe 121, the processing gas supply part 122, the valve 123, the check valve 124, the supply pipe 125, the purge gas supply part 126, and the valve 127 of the above embodiment are omitted.

  Further, the processing container 110 is provided with a pressure measuring device 310 that measures the pressure of nitrogen gas in the processing container 110. The measurement result of the pressure measuring device 310 is output to the pressure control unit 311. The pressure control unit 311 controls, for example, the valve 302 and the gas circulation unit 151 so that the pressure of the nitrogen gas becomes a predetermined pressure, for example, 100 Pa higher than the atmospheric pressure, based on the measurement result. The predetermined pressure is set such that, for example, the volatilization rate of the developer in the processing container 110 is, for example, 10% or less with respect to the volatilization rate of the developer under normal pressure. In the present embodiment, the concentration measuring device 130 and the concentration control unit 131 in the above embodiment are omitted.

  The other configuration of the development processing apparatus 30 is the same as the configuration of the development processing apparatus 30 of the above-described embodiment, and thus the description thereof is omitted.

  In such a case, in step S <b> 2, the valve 302 is opened and nitrogen gas is supplied from the processing gas supply unit 301 into the processing container 110. In steps S2 and S3, the supply of nitrogen gas from the processing gas supply unit 310 is controlled by the pressure measuring device 310 and the pressure control unit 311. That is, the pressure of the nitrogen gas in the processing container 110 is measured by the pressure measuring device 310. Then, the pressure control unit 310 controls the pressure in the processing container 110 to be a predetermined pressure, for example, 100 Pa higher than the atmospheric pressure. As described above, the gas pressure in the processing container 110 is controlled to a positive pressure, so that volatilization of the developer supplied into the processing container 110 is suppressed. Thereafter, in step S4, with the gas pressure in the processing container 110 maintained at a predetermined pressure, the developer is supplied from the developer nozzle 160 onto the wafer W, and the resist film is developed. Also in this step S4, the nitrogen gas in the cup 143 (in the processing container 110) is circulated to the supply pipe 300 through the circulation path 150 by the gas circulation unit 151.

  In addition, since other process S1, S5-S8 is the same as that of process S1, S5-S8 of the said embodiment, description is abbreviate | omitted.

  Also in this embodiment, since the gas pressure in the processing container 110 is a predetermined pressure higher than the atmospheric pressure in step S4, volatilization of the developer supplied onto the wafer W can be suppressed. Accordingly, development defects can be suppressed, and the supply amount of the developer can be reduced.

  Note that the temperature adjusting mechanism 250 shown in FIG. 7 may also be provided in the development processing apparatus 30 of the present embodiment to adjust the temperature of the nitrogen gas supplied to the processing container 110. The temperature adjustment mechanism 250 may be provided in the supply pipe 300, or may be provided in the gas diffusion unit 120 or the processing gas supply unit 301. As described above, the resist film on the wafer W can be developed more efficiently by adjusting the atmospheric temperature in the processing container 110.

  In the above embodiment, in step S4, the developing solution is supplied from the developing solution nozzle 160 to the central portion on the rotating wafer W and diffused onto the wafer W. However, the developing solution supply method is as follows. The present invention is not limited to this, and various methods can be taken. For example, the developing solution may be supplied to the rotating wafer W while moving the developing solution nozzle 160 from the outer periphery to the center of the wafer W. In such a case, the developing solution supplied from the developing solution nozzle 160 is , Supplied on the wafer W in a spiral. Further, for example, the developer may be supplied while moving the developer nozzle provided with a slit-like supply port longer than the diameter of the wafer W in the radial direction of the wafer W. In either case, the developer is supplied to the entire surface of the wafer W, and the resist film is appropriately developed.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Coating | development processing system 30 Development processing apparatus 110 Processing container 120 Gas diffusion part 122 Processing gas supply part 126 Purge gas supply part 129 Supply port 130 Concentration measuring device 131 Concentration control part 140 Spin chuck 143 Cup 150 Circulation path 151 Gas circulation part 160 Development Liquid nozzle 164 Rinse liquid nozzle 200 Control unit 250 Temperature control mechanism 301 Processing gas supply unit 310 Pressure measuring device 311 Pressure control unit W Wafer

Claims (18)

A development processing apparatus for a substrate,
A processing container for accommodating and processing the substrate;
A substrate holding unit for holding the substrate in the processing container;
A developer supply unit for supplying a developer containing an organic solvent onto the substrate held by the substrate holding unit;
A gas supply unit for supplying a processing gas into the processing container;
A gas circulation section for supplying and circulating the processing gas flowing out of the processing container again into the processing container;
A gas diffusion section provided in the processing container and above the substrate holding section, and diffusing the processing gas from the gas supply section and supplying the processing gas into the processing container.
A development processing apparatus , wherein a plurality of supply ports to which the processing gas is supplied are formed on a surface of the gas diffusion part on the substrate holding part side . The development processing apparatus according to claim 1, wherein the processing gas is a vaporized organic solvent. A concentration measuring device for measuring the concentration of the processing gas in the processing container;
The development processing apparatus according to claim 2, further comprising: a control unit that controls the gas supply unit so that the concentration of the processing gas becomes a predetermined concentration. The development processing apparatus according to claim 2, further comprising another gas supply unit that supplies an inert gas in the processing container. The processing gas is an inert gas,
The development processing apparatus according to claim 1, wherein the inside of the processing container is maintained at a predetermined pressure by the processing gas. A pressure measuring device for measuring the pressure of the processing gas in the processing container;
The development processing apparatus according to claim 5, further comprising a control unit that controls the gas supply unit so that the pressure of the processing gas becomes the predetermined pressure. Wherein the gas supply unit is characterized by a temperature adjusting mechanism for adjusting the temperature of the process gas is provided, a developing apparatus according to any one of claims 1-6. In the processing container, having a cup provided to surround the side of the substrate held in the substrate holding unit,
It said gas circulating portion is characterized by circulating the treatment gas flowing out of the cup into the processing chamber, a developing apparatus according to any of claims 1-7. On the substrate held by the substrate holding section, and having a rinsing liquid supply section for supplying a rinsing liquid of the developer, a developing apparatus according to any one of claims 1-8. A method for developing a substrate,
A gas diffusion part in which a plurality of supply ports to which a processing gas is supplied is formed on the surface on the substrate holding part side is provided in the processing container for containing the substrate and above the substrate holding part for holding the substrate, houses a substrate within a processing vessel, after holding the substrate to the substrate holder, a gas supply step of supply supplying process gas from the gas supply unit to the gas diffusion portion inside the process chamber is diffused by,
Then, on the substrate held by the substrate holding unit, a development process step of supplying a developer containing an organic solvent and performing a development process,
In the development processing step, the processing gas flowing out of the processing container is supplied again into the processing container and circulated. The development processing method according to claim 10 , wherein the processing gas is a vaporized organic solvent. 12. The development processing method according to claim 11 , wherein in the development processing step, the concentration of the processing gas in the processing container is maintained at a predetermined concentration. The processing gas is an inert gas,
11. The development processing method according to claim 10 , wherein, in the development processing step, the inside of the processing container is maintained at a predetermined pressure by the processing gas. The development processing method according to any one of claims 10 to 13 , wherein in the development processing step, the processing gas supplied to the processing container is adjusted to a predetermined temperature. After the development step, on the substrate held by the substrate holding section, and having a rinsing step of supplying a rinse liquid developer, a developing process according to any one of claims 10-14 Method. The development processing method according to claim 15 , wherein an inert gas is supplied into the processing container during the rinsing step. A program that operates on a computer of a control unit that controls the development processing apparatus in order to cause the development processing apparatus to execute the development processing method according to any one of claims 10 to 16 . A readable computer storage medium storing the program according to claim 17 .

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