KR20090086375A - Reactor for depositing thin film on wafer - Google Patents

Abstract

A thin film depositing device is provided to prevent the mixture of source gas inside a reactor by forming an exhaust port adjacent to a source gas supply unit. A substrate support unit(210) is rotatably installed inside a reactor(200). A plurality of substrate mounting parts are formed in an upper side of the substrate support unit. A gas injector(220) includes a plurality of source gas supply units and a plurality of purge gas supply units. The plurality of source gas supply units supply the different kind of source gas on the substrate support unit. The plurality of purge gas supply units supply the purge gas on the substrate support unit. An exhausting unit(230) includes an exhaust groove part and a plurality of exhaust ports. The plurality of exhaust ports exhaust the source gas to the outside of the reactor. The pump part is connected to the plurality of exhaust ports to exhaust the gas inside the exhaust port.

Description

Thin film deposition apparatus {Reactor for depositing thin film on wafer}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus that can reduce the contamination inside the reactor.

As the scale of semiconductor devices is gradually reduced, the demand for ultra-thin films is increasing. In addition, as the contact hole size is reduced, the problem of step coverage becomes more and more serious. As a new deposition method capable of overcoming various problems, an atomic layer deposition (ALD) method has emerged. In general, the atomic layer deposition method is a method of separating and supplying each source gas to the substrate to form a thin film by the surface saturation of the source gases. In order for the atomic layer deposition to be stably maintained, the first raw material gas and the second raw material gas must be separated and supplied into the reactor so as not to mix with each other in the deposition space on the substrate.

In US Patent No. 5,730,802, there is a gas injector that separates a reactor into partitions and supplies a first raw material gas, a second raw material gas, and a separation gas into a space partitioned by partition walls, and the substrate holder rotates to deposit an atomic layer. A thin film deposition apparatus and a thin film deposition method are disclosed.

1 is a view illustrating a schematic configuration of a thin film deposition apparatus according to the present invention. Referring to FIG. 1, the thin film deposition apparatus 1 is a reactor 10, a substrate holder 20, a source gas supply port 30, 40, and a separation gas supply, which are designed to be rotatable and positioned in the reactor 10. It consists of a partition 60 for preventing mixing of the sphere 50 and source gas. The source gas supplied through the raw material gas supply ports 30 and 40 by the rotation of the substrate holder 20 and the separation gas supplied through the separation gas supply port 50 are time-deviated above the substrate w. It is alternately supplied, and atomic layer deposition is performed.

However, although the thin film deposition apparatus 1 blocks the plurality of source gases from being mixed on the substrate w by the purge gas by the partition wall 60, the reactor 10 is in the process of exhausting a plurality of unreacted source gases. Mixing will occur within. As such, when unreacted plurality of raw material gases are mixed in the reactor 10, unwanted by-products are generated. And the generated by-products are generally formed in a solid phase (固 狀), there is a problem that causes contamination inside the reactor (10).

In addition, such by-products may flow back into the reactor when the pump malfunctions or the pump stops operating, and may act as a cause of the failure of the pump. And when these by-products are extremely accumulated in the exhaust path, a problem may occur that the exhaust path is blocked by the by-product. In this case, the pump must be disassembled to remove by-products or the pump must be replaced. In addition, the exhaust paths must be replaced or the by-products in the exhaust path must be removed. Since such repair and maintenance takes a lot of effort and time, it acts as a deterrent to mass production of semiconductor devices.

In addition, when the unreacted reactant moves from the pump to the scrubber, it corresponds to normal pressure and room temperature conditions, and there is a risk of explosion in the scrubber, etc., depending on the type of source gas. There is a difficulty.

Accordingly, an object of the present invention is to provide a thin film deposition apparatus in which source gases are not mixed in a reactor.

In order to solve the above technical problem, the thin film deposition apparatus according to the present invention is a reactor; A substrate support part rotatably installed in the reactor and having a plurality of substrate seating parts for mounting a substrate on an upper surface thereof; The substrate support part includes a purge gas disposed between the plurality of source gas supply devices for supplying different kinds of source gases onto the substrate support part and the plurality of source gas supply devices on the substrate support part to purge the source gas. A gas injection unit in which a plurality of purge gas supply devices for supplying air are radially installed; An exhaust portion disposed in an annular shape so as to surround the substrate support portion, an exhaust groove portion configured to guide and exhaust the plurality of source gases to the outside of the reactor, and an exhaust portion formed with a plurality of exhaust ports for exhausting the source gas; And a pump connected to the plurality of exhaust ports to discharge the gas introduced into the exhaust unit to the outside of the reactor, wherein each of the source gases supplied through the respective source gas supply devices is exhausted through different exhaust ports. At least one exhaust port is disposed adjacent to the source gas supply device.

In order to solve the above technical problem, the thin film deposition apparatus according to the present invention is a substrate support portion having a reactor, a plurality of substrate seating portion rotatably installed in the reactor and seating the substrate on the upper surface, and the substrate support portion Between the plurality of source gas supply device for supplying different kinds of source gas to the substrate support portion and the plurality of source gas supply device on the upper side to supply the purge gas for purging the source gas onto the substrate support portion A gas injection unit in which a plurality of purge gas supply devices are radially installed, an annular shape so as to surround the substrate support part, and an exhaust groove part for guiding and exhausting the plurality of source gases to the outside of the reactor; Plural having an exhaust part in which the some exhaust port for exhausting source gas is formed. Process chamber; And a plurality of pumps for exhausting the gas in the process chamber to the outside, wherein the source gas supplied through the respective source gas supply devices is exhausted through different exhaust ports at least around the source gas supply devices. One exhaust port is disposed adjacent to each other, and each of the plurality of pumps is connected to an exhaust port for exhausting the same gas among the plurality of exhaust ports of the respective process chambers.

In the thin film deposition apparatus according to the present invention, since the exhaust port is formed adjacent to each source gas supply device, the mixing of the source gases in the reactor can be effectively prevented, thereby reducing the contamination of the thin film deposition apparatus.

In addition, by configuring the exhaust line and the pump as much as the type of the source gas is prevented from mixing the source gas in the exhaust line as well as inside the reactor, it is possible to significantly reduce the effort and cost consumed in managing the exhaust route.

In addition, when the same kind of raw material gas is used in a plurality of process chambers, the same kind of raw material gas may be exhausted by using one pump to reduce costs.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the thin film deposition apparatus according to the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

2 is a cross-sectional view showing a schematic configuration of a preferred embodiment of a thin film deposition apparatus according to the present invention, FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2, and FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG.

2 to 4, the thin film deposition apparatus according to the present invention includes a reactor 200, a substrate support 210, a gas injection unit 220, an exhaust unit 230, a pump unit 240, and a scrubber unit ( 250).

The reactor 200 has a bottom 201, an outer wall 202, and an upper plate 203. The bottom part 201 is formed in the shape of a disc, and the outer wall part 202 extends vertically upward from the edge of the bottom part 201 and has a closed curved shape. And the outer wall part 202 is provided with the board | substrate w conveyance path (not shown) which the board | substrate w enters and exits. The upper plate 203 has a disc shape and is detachably coupled to the upper surface of the outer wall portion 202. When the upper plate 203 is coupled to the upper surface of the outer wall portion 202, a predetermined space is formed inside the reactor 200, and in particular, the substrate support 210 and the gas injection unit 220 above the substrate support 210 to be described later. The thin film deposition space 205 is formed in between. A sealing member such as an O-ring (not shown) is interposed between the lower surface of the upper plate 203 and the upper surface of the outer wall portion 202 to seal the upper space. An exhaust port (not shown) for discharging unnecessary gas and particles remaining inside the reactor 200 is provided in the bottom portion 201 or the outer wall portion 202.

The substrate support 210 is installed inside the reactor 200 and includes a susceptor 210, a substrate seating portion 213, a shaft 211, and a heater (not shown).

The susceptor 210 is rotatably installed in the reactor 200 in the shape of a disc. Six substrate mounting portions 213 are formed in the susceptor 210 to be concave. As shown in FIG. 3, the substrate mounting parts 213 are disposed along the circumferential direction of the upper surface of the substrate support part 210, and the substrate w is mounted on each substrate mounting part 213.

One end of the shaft 211 is coupled to a lower surface of the susceptor 210, and the other end penetrates through the reactor 200, and is connected to a rotation driving means such as a motor (not illustrated). Accordingly, as the shaft 211 rotates, the susceptor 210 rotates about the rotation center axis A shown in FIG. 2. In addition, the shaft 211 is connected to the lifting drive means for allowing the susceptor 210 to lift. Lifting drive means include, for example, a motor and a gear assembly (not shown). A heater (not shown) is buried under the susceptor 210 to adjust the temperature of the substrate w.

The gas injector 220 is coupled to the upper plate 203 installed above the substrate support 210, and includes gas supply devices 270a, 270b, and 270c. The gas supply devices 270a, 270b, and 270c are classified into a first gas supply device 270a, a second gas supply device 270b, and a purge gas supply device 270c according to the type of gas to be supplied. The first gas supply device 270a supplies, for example, a first raw material gas, such as xylene (SiH ₄ ), onto the substrate support 210, and the second gas supply device 270b is, for example, oxygen (O ₂ ). The second raw material gas such as is supplied onto the substrate support 210. The purge gas supply device 270c supplies a purge gas for purging the first raw material gas and the second raw material gas onto the substrate support 210. That is, the first gas supply device 270a and the second gas supply device 270b are devices for supplying a source gas for depositing a thin film on the substrate w, and the purge gas supply device 270c is a thin film forming space ( A device for supplying a purge gas to purge the unreacted raw material gas remaining in the 205 so as not to be mixed on the substrate support 210. Each gas supply device 270a, 270b, and 270c may be configured in the form of a showerhead.

As shown in FIG. 4, the first gas supply device 270a, the second gas supply device 270b, and the purge gas supply device 270c are radially installed along the circumferential direction of the gas injector 220. In addition, the gas supply devices 270a and 270b for supplying the first raw material gas and the second raw material gas among the ten gas supply devices shown in FIG. 4 are disposed on opposite sides so that the mixing of the first raw material gas and the second raw material gas is not easy. Is installed. In addition, four purge gas supply devices 270c are disposed between the first gas supply device 270a and the second gas supply device 270b so as not to mix the first raw material gas and the second raw material gas. When the amount of source gas to be purged is not large, some of the purge gas supply devices 270c may prevent the purge gas from being supplied.

The purpose of supplying the purge gas is to prevent the different types of source gases supplied through the gas injection unit 220 from being mixed on the substrate w. However, only by disposing the purge gas supply device 270c between the gas supply devices 270a and 270b for supplying the first raw material gas and the second raw material gas, the first raw material gas is provided through the central portion of the substrate support 210. And it is difficult to block the mixing of the second raw material gas. Therefore, as shown in FIGS. 2 and 4, a central purge gas supply device for supplying a purge gas for purging the first raw material gas and the second raw material gas to the center of the gas injector 220 onto the substrate support 210. 260 is installed. The purge gas supplied from the central purge gas supply device 260 prevents the first raw material gas and the second raw material gas from being mixed at the central portion of the substrate support 210. In addition, the central purge gas supply device 260 may also be configured in the form of a shower head.

When the substrate support part 210 on which the substrate w is mounted is rotated below the gas injection unit 220 installed as described above, the first raw material gas, the purge gas, the second raw material gas, and the purge gas are periodically on the substrate w. Since it is supplied to the atomic layer deposition is possible.

The source gas supplied through the gas injector 220 may be supplied by plasma. To this end, a separate plasma generator (not shown) installed outside the reactor 200 may be used or plasma may be generated inside the gas injector 220 and supplied to the upper surface of the substrate support 210.

FIG. 5 is a partially cutaway perspective view illustrating a schematic configuration of a preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention, and FIG. 6 is a cross-sectional view taken along the line VI-VI of FIG. 2. In order to clarify the arrangement relationship between the exhaust part and the gas injector, inflow holes of the gas injector and the baffle are shown in dashed lines and are shown together with the exhaust outlet.

The exhaust unit 230 is for exhausting gas remaining in the reactor 200. Referring to FIGS. 5 and 6 together with FIG. 2, the exhaust unit 230 may include an exhaust groove 237 and a baffle 231. Equipped.

The exhaust groove 237 is surrounded by the outer wall 202, the inner wall 233 and the bottom 201. In more detail, the outer wall portion 202 is formed in an annular shape as referring to the inner surface of the outer wall of the reactor 200.

In the present embodiment, the bottom portion 201 refers to the bottom surface of the reactor 200, the bottom portion 201 is formed integrally in the shape of a disc, but based on two areas, that is, the inner wall portion 233 to be described later As a result it can be divided into a lower wheel portion 239 disposed on the outside and a central portion 232 disposed on the inside. The lower wheel part 239 indicates a part which protrudes horizontally from the outer wall part 202 and is formed in an annular shape as a whole, and the center part 232 indicates a part extending from the lower wheel part 239. In addition, a through hole 234 is formed in the center portion of the center portion 232 to allow the above-described shaft 211 to penetrate, and the lower wheel portion 239 includes two exhaust ports 238a and 238b penetrating between the upper surface and the lower surface. ) Is formed.

The exhaust ports 238a and 238b are disposed adjacent to each of the source gas supply devices 270a and 270b so that the source gas supplied to the source gas supply devices 270a and 270b is the source gas supply devices 270a and 270b. Exhaust port 238a, 238b disposed adjacent to the periphery of the exhaust gas to the outside of the reactor 200. In the present exemplary embodiment, the source gas supply devices 270a and 270b may have the first gas supply device 270a and the second gas based on the center point of the gas injector 220 as shown in FIGS. 4 and 6. The feeder 270b is arranged to face oppositely. And the exhaust ports 238a, 238b, as shown in FIG. 6, one 238a is disposed below the outer side of the first gas supply device 270a and the other one below the outer side of the second gas supply device 270b ( 238b) is disposed.

When the exhaust unit 230 is configured in this manner, the first raw material gas supplied through the first gas supply device 270a flows into the exhaust groove 237 and is adjacent to the periphery of the first gas supply device 270a. It is exhausted to the outside of the reactor 200 through the exhaust port 238a disposed. The second raw material gas supplied through the second gas supply device 270b also flows into the exhaust groove 237 and then through the exhaust port 238b disposed adjacent to the second gas supply device 270b. It is exhausted to the outside of the reactor 200. At this time, since the exhaust ports 238a and 238b are pumped by the pumps 240a and 240b to be described later, the first raw material gas is opposite to the exhaust port 238a adjacent to the periphery of the first gas supply device 270a. It does not exhaust through the exhaust port 238b arrange | positioned at. Similarly, the second raw material gas is not exhausted through the exhaust port 238a disposed on the opposite side of the second gas supply device 270b instead of the exhaust port 238b disposed adjacent to the periphery of the second gas supply device 270b. Therefore, since the first raw material gas and the second raw material gas are exhausted through different paths, they are not mixed in the reactor 200.

Further, since the purge gas supplied through the purge gas supply device 270c does not react with the source gas even when mixed with the source gas, it is not a problem even if it is exhausted through any of the exhaust ports 238a and 238b.

The inner wall portion 233 extends vertically upward from the lower wheel portion 239 and is disposed in a ring shape between the substrate support portion 210 and the outer wall portion 202 so as to be spaced apart from the outer wall portion 202 by a predetermined distance. Steps are formed on the upper surfaces of the outer wall portion 202 and the inner wall portion 233 so that the baffle 231 to be described later is installed.

The baffle 231 is formed on a step formed in the outer wall portion 202 and the inner wall portion 233 as described above so as to form an annular plate shape and cover the open upper side of the exhaust groove portion 237. In addition, a plurality of inflow holes 236a and 236b penetrating between the upper and lower surfaces of the baffle 231 are formed at predetermined angle intervals along the upper surface of the baffle 231 to allow gas to flow into the exhaust groove 237. have. When the baffle 231 is installed as described above, it is possible to control the exhaust flow rate by adjusting the size and number of the inflow holes 236a and 236b formed in the baffle 231. In addition, the pressure in the reactor 200 may be adjusted by controlling the exhaust flow rate.

The first raw material gas supplied through the first gas supply device 270a is formed through the inlet hole 236a formed between the first gas supply device 270a and the exhaust port 238a disposed adjacent to the exhaust gas groove 236a. (237). Similarly, the second raw material gas supplied through the second gas supply device 270b passes through the inlet holes 236b formed between the second gas supply device 270b and the exhaust port 238b disposed adjacent thereto. It flows into the exhaust groove 237. At this time, since the exhaust ports 238a and 238b are pumped by the pumps 240a and 240b to be described later, and the source gas is prevented from being diffused by the purge gas, the first raw material gas is surrounded by the first gas supply device 270a. It does not flow into the exhaust groove 237 through the inlet hole 236b which is formed on the opposite side of the inlet hole 236a which is formed adjacently. Similarly, the second raw material gas does not flow into the exhaust groove part 237 through the inlet hole 236a formed on the opposite side of the second gas supply device 270b instead of the inlet hole 236b formed adjacent to the periphery of the second gas supply device 270b. Do not.

As a result, in the present embodiment, the first raw material gas supplied through the first gas supply device 270a is provided through the inlet hole 236a and the exhaust port 238a which are disposed adjacent to the periphery of the first gas supply device 270a. Exhausted. Similarly, the second raw material gas supplied through the second gas supply device 270b is exhausted through the inlet hole 236b and the exhaust port 238b disposed adjacent to the periphery of the second gas supply device 270b.

2 again, the pump unit 240 is for discharging the unreacted gas in the reactor 200 to the outside of the reactor 200, and includes a first pump 240a and a second pump 240b. The first pump 240a is installed to be connected to the exhaust port 238a disposed adjacent to the first gas supply device 270a, and the second pump 240b is disposed around the second gas supply device 270b. It is installed to be connected to the exhaust port 238b which is adjacently arranged. The first pump 240a and the second pump 240b are preferably installed to provide the same suction force so that the first raw material gas and the second raw material gas are not mixed in the reactor 200. When the two pumps 240a and 240b are installed as described above, the first raw material gas and the second raw material gas are not mixed inside the reactor 200 as well as outside the reactor 200. However, the pump unit 240 includes only one pump, and connects one pump to both the exhaust ports 238a and 238b so that the first raw material gas and the second raw material gas introduced into the exhaust unit 230 are both reactors ( 200) It can be discharged to the outside. Even if only one pump is configured, the source gases are not mixed in the reactor 200.

The scrubber unit 250 is installed at the rear end of the pump unit 240 on the exhaust path to filter the exhaust gas, and includes a first scrubber 250a and a second scrubber 250b. The first scrubber 250a is installed at the rear end of the first pump 240a on the exhaust path of the first raw material gas to filter the first raw material gas, and the second scrubber 250b is on the exhaust path of the second raw material gas. It is provided at the rear end of the second pump 240b to filter the second raw material gas. As such, when the scrubbers 250a and 250b are installed in each of the pumps 240a and 240b, raw materials are not mixed up to all the exhaust paths, thereby greatly reducing the effort and cost of managing the exhaust paths.

Hereinafter, the exhaust process of the thin film deposition apparatus having the above-described configuration will be described. For convenience of description, the inflow hole and the exhaust port disposed adjacent to the periphery of the first gas supply device 270a are called the first inflow hole 236a and the first exhaust port 238a, respectively, and the second gas supply device 270b. The inflow hole and the exhaust port disposed adjacent to the periphery thereof are called the second inflow hole 236a and the second exhaust port 238a, respectively.

The first raw material gas is supplied through the first gas supply device 270a, and the second raw material gas is supplied through the second gas supply device 270b. The purge gas is supplied through the purge gas supply device 270c and the central purge gas supply device 260. Thus, since the substrate support part 210 rotates while the first raw material gas, the second raw material gas, and the purge gas are supplied, the first raw material gas and the second raw material gas are periodically supplied onto the substrate w to deposit a thin film. .

Gas not involved in the thin film deposition of the first raw material gas is introduced into the exhaust groove 237 through the first inlet hole 236a, and the first raw material gas introduced into the exhaust groove 237 is again the first exhaust pipe 238a. Is discharged to the outside of the reactor 200 through. In addition, the first pump 240a is connected to the first exhaust port 238a to facilitate the exhaust, and the first raw material gas discharged to the outside of the reactor 200 is filtered by the first scrubber 250a. Similarly, the gas not involved in the thin film deposition of the second raw material gas is introduced into the exhaust groove 237 through the second inlet hole 236b, and the second raw material gas introduced into the exhaust groove 237 is returned to the second exhaust port. It is exhausted outside the reactor 200 through 238b. In addition, the second pump 240b is connected to the second exhaust port 238b to facilitate the exhaust, and the second raw material gas discharged to the outside of the reactor 200 is filtered by the second scrubber 250b. At this time, it is preferable that the first pump 240a and the second pump 240b provide the same suction force so that the first raw material gas and the second raw material gas are not mixed in the exhaust groove 237.

The purge gas may be exhausted through any of the exhaust ports of the first exhaust port 238a and the second exhaust port 238b. More specifically, the purge gas supplied through the two purge gas supply devices 270c provided on both sides of the first gas supply device 270a is exhausted through the first exhaust port 238a and the second gas supply device ( 270b) The purge gas supplied through the two purge gas supply devices 270c provided on both sides is exhausted through the second exhaust port 238b. As the exhaust unit 230 is configured as described above, the first raw material gas and the second raw material gas are not mixed in the reactor. In addition, it is not mixed in the pump, scrubber, and the like exhaust line outside the reactor. Meanwhile, since the purge gas is supplied from the central purge gas supply device 260, raw gas is not mixed through the central portion of the substrate support 210, and the purge gas supplied through the central purge gas supply device 260 may be the first. It is exhausted to both the exhaust port 238a and the second exhaust port 238b.

Although the bottom portion of the exhaust portion and the bottom surface of the reactor are illustrated and described above, the present invention is not necessarily limited thereto. For example, the bottom portion may be spaced upward from the reactor bottom surface, and protruded from the outer wall portion to be disposed in a ring shape. May be Although the exhaust port is illustrated and described as being formed at the bottom of the exhaust unit, the exhaust port is not necessarily limited thereto. For example, the exhaust port may be formed to penetrate between the inner surface and the outer surface of the outer wall portion.

As described above, the exhaust unit 230 may be configured such that the remaining portion other than the baffle 231 is integrally formed with the reactor 200, as shown in FIGS. 7 and 8. ) Is made of a separate member from the reactor 200 may be in the form of being coupled to the reactor 200.

FIG. 7 is a perspective view showing a schematic configuration of another preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention, and FIG. 8 is a sectional view taken along line VII-VII of FIG.

7 and 8, the exhaust unit 230 ′ includes a baffle 231, an inner circumferential portion 310, an outer circumferential portion 320, and a bottom surface portion 330. The exhaust part 230 ′ is disposed between the outer surface of the substrate support part 210 and the inner surface of the outer wall part 202 of the reactor 200. The outer circumferential portion 320 and the inner surface of the outer wall portion 202 of the reactor 200 are coupled to each other, and the inner circumferential portion 310 and the outer surface of the substrate support portion 210 are coupled to each other. The inner circumferential portion 310, the outer circumferential portion 320, and the bottom portion 330 are described in the inner wall portion 233, the outer wall portion 202, the bottom portion 201, and the reactor 200 shown in FIGS. 5 and 6. Except for the description that it is formed integrally with the same. 5 and 6, the description of the same reference numerals is the same as those of FIGS. 5 and 6.

And so far described and described an embodiment in which the central purge gas supply device 260 is installed as a means for preventing the source gas is mixed in the central portion of the substrate support 210, but is not limited thereto. 9 is a view showing another preferred embodiment of the thin film deposition apparatus according to the present invention.

As shown in FIG. 9, the gas injector 220 protrudes downwardly from the bottom surface of the gas injector 220 as another means for preventing the source gases from being mixed at the central portion of the substrate support 210. ) May be provided. In addition, the substrate supporter 210 may include an insertion groove 215 at a position corresponding to the protrusion 225 so that the protrusion 225 of the gas injection unit 220 is accommodated in the substrate supporter 210. Even when the protrusion 225 is inserted into the insertion groove 215, the outer surface and the substrate support of the protrusion 225 of the gas injector 220 do not affect the gas injector 220 when the substrate support 210 rotates. There should be some space between the insertion grooves 215 of 210. As such, the mixing of the source gases at the central portion of the substrate support 210 by the protrusion 225 of the gas injector 220 is physically blocked. In this case, the plurality of gas supply devices 270a, 270b, and 270c are radially disposed around the protrusion 225, and the plurality of substrate seating parts 213 are radially disposed about the insertion groove 215. . Since the same reference numerals as those shown in FIG. 2 among the reference numerals shown in FIG. 9 are the same as those described with reference to FIG. 2, they will be omitted.

In addition, in contrast to the above case, even when the insertion groove is formed in the gas injection unit 220 and the protrusion is formed in the substrate support unit 210, the same effect can be expected.

10 is a view showing a schematic configuration of a preferred embodiment of the configuration of the exhaust line of the thin film deposition value according to the present invention.

Referring to FIG. 10, the thin film deposition apparatus according to the present invention includes a plurality of process chambers 800, a first pump 840a, and a second pump 840b.

The process chamber 800 includes a reactor, a substrate support, a gas injector and an exhaust. The reactor, substrate support, gas injector, and exhaust unit of the process chamber 800 of FIG. 10 include the reactor 200, the substrate support 210, the gas injector 220, and the exhaust unit 230 of FIG. 2. And the important composition and effect is the same.

The first pump 840a supplies the first source gas of each of the plurality of process chambers 800 to discharge the first source gas supplied to each of the plurality of process chambers 800 to the outside of each reactor. It is installed to be connected to the exhaust line (290a) installed in communication with the exhaust port disposed adjacent to the supply device. Similarly, the second pump 840b supplies the second raw material gas of each of the plurality of process chambers 800 to discharge the second raw material gas supplied to each of the plurality of process chambers 800 to the outside of each reactor. It is installed to be connected to the exhaust line 290b installed in communication with the exhaust port disposed adjacent to the source gas supply device. In other words, the pump and the scrubber can be used in common to exhaust the same kind of raw material gas, thereby reducing the cost.

Although a thin film deposition apparatus in which two kinds of raw material gases are supplied to perform a thin film deposition process is illustrated and described above, the present invention is not limited thereto. However, in order to supply three or more kinds of source gases, the gas injection unit 220 may further include a source gas supply device in addition to the first gas supply device 270a and the second gas supply device 270b, and each source gas supply device. An additional purge gas supply device is to be provided between. In addition, the exhaust unit 230 should be formed adjacent to the periphery of the source gas supply device to which an additional exhaust port for exhausting each source gas is added. In addition, in order to prevent the raw material gases from being mixed on the exhaust line, it is preferable that the number of pumps and scrubbers corresponding to the type of the raw material gases is additionally provided. In addition, when four or more kinds of source gases are supplied, the above-described contents are additionally provided.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

1 is a configuration diagram showing a schematic configuration of a conventional thin film deposition apparatus for atomic layer deposition;

2 is a schematic view showing a schematic configuration of a preferred embodiment of a thin film deposition apparatus according to the present invention,

3 is a view showing a schematic configuration of a substrate support and a baffle used in the thin film deposition apparatus according to the present invention, a cross-sectional view taken along line III-III of FIG.

4 is a view showing a schematic configuration of a gas injection unit used in the thin film deposition apparatus according to the present invention, a cross-sectional view taken along line IV-IV of FIG.

5 is a partially cutaway perspective view illustrating a schematic configuration of a preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention;

6 is a view showing a schematic configuration of a preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention, a cross-sectional view taken along line VI-VI of FIG.

7 is a perspective view showing a schematic configuration of another preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention;

FIG. 8 is a view showing a schematic configuration of another preferred embodiment of the exhaust unit used in the thin film deposition apparatus according to the present invention.

9 is a view showing a schematic configuration of another preferred embodiment of a thin film deposition apparatus according to the present invention, and

10 is a view showing a schematic configuration of a preferred embodiment of the configuration of the exhaust line of the thin film deposition apparatus according to the present invention.

<Description of the symbols for the main parts of the drawings>

200 reactor 210 substrate support 220 gas injection unit

230: exhaust portion 240: pump portion 250: scrubber portion

260: central purge gas supply device 270a, 270b, 270c: gas supply device

212: susceptor 205: thin film deposition space 231: baffle

236a, 236b: inlet hole 238a, 238b: exhaust port

237: exhaust groove portion 202: outer wall portion 233: inner wall portion

201: Bottom 239: Lower Wheel

Claims (8)

Reactor; A substrate support part rotatably installed in the reactor and having a plurality of substrate seating parts for mounting a substrate on an upper surface thereof; The substrate support part includes a purge gas disposed between the plurality of source gas supply devices for supplying different kinds of source gases onto the substrate support part and the plurality of source gas supply devices on the substrate support part to purge the source gas. A gas injection unit in which a plurality of purge gas supply devices for supplying air are radially installed; An exhaust portion disposed in an annular shape so as to surround the substrate support portion, an exhaust groove portion configured to guide and exhaust the plurality of source gases to the outside of the reactor, and an exhaust portion formed with a plurality of exhaust ports for exhausting the source gas; And And a pump unit connected to the plurality of exhaust ports to discharge the gas introduced into the exhaust unit to the outside of the reactor. Thin film deposition apparatus, characterized in that the at least one exhaust port is disposed adjacent to each of the source gas supply device so that the source gas supplied through the respective source gas supply devices are exhausted through different exhaust ports. The method of claim 1, The exhaust groove portion, An outer wall portion of the reactor, a bottom portion extending from the outer wall portion of the reactor toward the substrate support portion and being disposed in an annular shape, and extending upwardly from the bottom portion and being spaced apart from the outer wall portion of the reactor by a predetermined distance; And a thin film deposition apparatus surrounded by an inner wall portion disposed annularly between the reactor outer wall portion. The method according to claim 1 or 2, Two source gas supply apparatuses are disposed to face each other with respect to a center point of the gas injection unit, and at least one exhaust port is disposed in a lower region of each of the two source gas supply apparatuses. The method according to claim 1 or 2, The exhaust unit, A baffle is formed in an annular plate shape so as to cover the open upper side of the exhaust groove, and a plurality of inflow holes penetrating between an upper surface and a lower surface to allow the plurality of source gases to flow into the exhaust groove. Thin film deposition apparatus further comprising. The method according to claim 1 or 2, The gas injection unit, A central purge gas supply device disposed in the center of the radially disposed source gas supply devices, and supplied with a purge gas for purging the source gases such that the plurality of source gases are not mixed at an upper portion of the substrate support part; Thin film deposition apparatus, characterized in that. The method according to claim 1 or 2, A thin film deposition apparatus, characterized in that the protrusion is formed in one of each of the central portion of the gas injection portion and the substrate support, the convex insertion groove is formed in the other concave to accommodate the protrusion. The method according to claim 1 or 2, And the pump unit includes a plurality of pumps connected to the respective exhaust ports. Reactor, A substrate support part rotatably installed in the reactor and having a plurality of substrate seating parts on which a substrate is mounted on an upper surface thereof; The substrate support part includes a purge gas disposed between the plurality of source gas supply devices for supplying different kinds of source gases onto the substrate support part and the plurality of source gas supply devices on the substrate support part to purge the source gas. A gas injection unit in which a plurality of purge gas supply devices for supplying air are radially installed; It is disposed in an annular shape so as to surround the substrate support, the exhaust groove portion for guiding and exhausting the plurality of source gases to the outside of the reactor, and an exhaust portion formed with a plurality of exhaust ports for exhausting the source gas A plurality of process chambers; And And a plurality of pumps for exhausting the gas in the process chamber to the outside, At least one exhaust port is disposed adjacent to each source gas supply device so that the source gas supplied through the source gas supply devices is exhausted through different exhaust ports, And each of the plurality of pumps is connected to an exhaust port for exhausting the same gas among the plurality of exhaust ports of the respective process chambers.

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