KR20090050865A - In plane switching mode liquid crystal display device and method of fabricating the same - Google Patents

Abstract

The In Plane Switching Mode (IPS) liquid crystal display and a method of manufacturing the same according to the present invention improve the aperture ratio by using an organic insulating film and at the same time form a hole pattern on a part of the common line to fix the column spacer. Forming a common line having a gate electrode, a gate line, and a hole formed in a portion of the first substrate; Forming a first insulating film on the first substrate; Forming an active pattern on the first substrate; Forming a source electrode and a drain electrode on the first substrate, and forming a data line crossing the gate line to define a pixel region; Forming a second insulating film, which is an organic insulating film, on the first substrate; Removing a portion of the second insulating layer to form a first contact hole exposing a portion of the drain electrode; Forming a plurality of first common electrodes and pixel electrodes disposed alternately in a pixel region of the first substrate to generate a transverse electric field, and a second common electrode positioned above the data line; Forming a pixel electrode line formed on the common line and connected to the plurality of pixel electrodes and electrically connected to the drain electrode through the first contact hole; And bonding the first substrate and the second substrate to face each other in a state where a constant cell gap is maintained by a first column spacer, wherein the second insulating layer and the pixel electrode line on the common line where the hole is formed have a step difference. And form a stepped region, wherein the first column spacer is positioned and fixed within the stepped region.

The transverse electric field type liquid crystal display device of the present invention configured as described above has a dual column spacer structure including a first column spacer holding a gap and a second column spacer preventing anti-pressed stains caused by an external force.

Organic insulating film, common line, hole pattern, touch failure, liquid crystal drop margin

Description

Transverse electric field type liquid crystal display device and manufacturing method thereof {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

The present invention relates to a transverse electric field type liquid crystal display device and a manufacturing method thereof, and more particularly to a transverse electric field type liquid crystal display device and a method of manufacturing the same that can improve the aperture ratio while ensuring a liquid crystal drop margin.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display (LCD) of the flat panel display device is an image representing the image using the optical anisotropy of the liquid crystal, is excellent in resolution, color display and image quality, and is actively applied to notebooks or desktop monitors have.

The liquid crystal display is largely composed of a color filter substrate as a first substrate, an array substrate as a second substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

In this case, the color filter substrate is formed between a color filter composed of a plurality of sub-color filters that implements red (R), green (G), and blue (B) colors and the sub-color filter. A black matrix for dividing and blocking light passing through the liquid crystal layer, and a transparent common electrode for applying a voltage to the liquid crystal layer.

The array substrate may include a plurality of gate lines and data lines arranged vertically and horizontally to define a plurality of pixel regions, thin film transistors (TFTs), which are switching elements formed at intersections of the gate lines and data lines, and the The pixel electrode is formed on the pixel region.

The color filter substrate and the array substrate configured as described above are joined to face each other by sealants formed on the outer side of the image display area to form a liquid crystal display panel. The color filter substrate and the array substrate are bonded to each other by the color filter substrate or the substrate. It is made through a bonding key formed on the array substrate.

In this case, the above-described liquid crystal display device represents a twisted nematic (TN) type liquid crystal display device which drives the nematic liquid crystal molecules in a direction perpendicular to the substrate, and the liquid crystal display device of the type has a viewing angle of 90 degrees. It has the disadvantage of being too narrow. This is due to the refractive anisotropy of the liquid crystal molecules because the liquid crystal molecules oriented horizontally with the substrate are oriented almost perpendicular to the substrate when a voltage is applied to the liquid crystal display panel.

Accordingly, there is an in-plane switching (IPS) type liquid crystal display device in which a liquid crystal molecule is driven in a horizontal direction with respect to a substrate to improve the viewing angle to 170 degrees or more. Hereinafter, the transverse field type liquid crystal display device will be described with reference to the accompanying drawings. It will be described in detail.

1 is a plan view schematically illustrating a portion of an array substrate of a general transverse electric field type liquid crystal display device. In an actual liquid crystal display device, N gate lines and M data lines intersect to present MxN pixels, but the description will be simplified. For the sake of illustration, one pixel is shown.

FIG. 2 is an exemplary view illustrating a cross section taken along line II ′ of the array substrate illustrated in FIG. 1, and illustrates the array substrate illustrated in FIG. 1 and the color filter substrate bonded together corresponding to the array substrate. .

1 and 2, a gate line 16 and a data line 17 are formed on the transparent array substrate 10 to be arranged on the array substrate 10 vertically and horizontally to define a pixel area. The thin film transistor T, which is a switching element, is formed at the intersection of the gate line 16 and the data line 17.

In this case, the thin film transistor T may include a pixel electrode 18 through a gate electrode 21 connected to the gate line 16, a source electrode 22 connected to the data line 17, and a pixel electrode line 18l. It is composed of a drain electrode 23 connected to. In addition, the thin film transistor is connected to the source electrode by the first insulating film 15a for insulating the gate electrode 21 and the source / drain electrodes 22 and 23 and the gate voltage supplied to the gate electrode 21. It includes an active pattern 24 for forming a conductive channel between the 22 and the drain electrode (23).

For reference, reference numeral 25 denotes an ohmic contact layer for ohmic contact between the source / drain region of the active pattern 24 and the source / drain electrodes 22 and 23.

At this time, the common line 8l and the storage electrode 18s are arranged in a direction parallel to the gate line 16 in the pixel area, and a transverse electric field 90 is generated in the pixel area to generate the liquid crystal molecules 30. The plurality of common electrodes 8 and the pixel electrodes 18 for switching) are arranged in substantially the same direction as the data line 17.

The plurality of common electrodes 8 are formed of the same conductive material as the gate line 16 and are connected to the common line 8l, and the plurality of pixel electrodes 18 have the same conductivity as the data line 17. It is formed of a material and is connected to the pixel electrode line 18l and the storage electrode 18s.

In this case, the pixel electrode 18 connected to the pixel electrode line 18l is electrically connected to the drain electrode 23 of the thin film transistor T through the pixel electrode line 18l.

In addition, the storage electrode 18s overlaps a portion of the common line 8l below the first insulating layer 15a with the first insulating layer 15a therebetween to form a storage capacitor Cst.

In addition, the transparent color filter substrate 5 implements the black matrix 6 and red, green and blue colors that prevent light leakage from the thin film transistor T, the gate line 16 and the data line 17. The color filter 7 for this is formed.

An alignment film (not shown) for determining the initial alignment direction of the liquid crystal molecules 30 is coated on opposite surfaces of the array substrate 10 and the color filter substrate 5 configured as described above.

The general transverse electric field type liquid crystal display device having the above structure has an advantage of improving the viewing angle because the common electrode 8 and the pixel electrode 18 are disposed on the same array substrate 10 to generate a transverse electric field. Have

However, the above-described transverse electric field type liquid crystal display device has a problem in that a plurality of common electrodes 8 and pixel electrodes 18 made of an opaque conductive material are arranged in the pixel area, thereby reducing the aperture ratio of the pixel area.

In addition, although not shown in the above-described configuration, in order to maintain a gap between the array substrate 10 and the color filter substrate 5 between the array substrate 10 and the color filter substrate 5. Spacers are formed.

The spacers may include spherical ball spacers scattered in a scattering manner or columnar column spacers formed directly on the array substrate 10 or the color filter substrate 5.

In this case, since the column spacer is not fixed to the array substrate 10 or the color filter substrate 5 facing each other, light leakage occurs when an external force such as pressing from the outside is applied to the liquid crystal display panel. Such light leakage is caused by the occurrence of slippage between the array substrate 10 and the color filter substrate 5 due to an external force, resulting in warpage of the liquid crystal display panel. In such a case, the arrangement of the liquid crystals does not maintain the initial black state, and the light passing through the liquid crystal layer rotates while undergoing a retardation different from the normal portion, resulting in light leakage, which is referred to as touch failure.

SUMMARY OF THE INVENTION An object of the present invention is to provide a transverse electric field type liquid crystal display device and a method of manufacturing the same, which improves the aperture ratio by forming a plurality of common electrodes and pixel electrodes with a transparent conductive material and simultaneously extending the opening region using an organic insulating film. .

Another object of the present invention is to provide a transverse electric field type liquid crystal display device and a method of manufacturing the same by forming a hole pattern on a part of a common line and fixing a column spacer in an upper stepped area to reduce touch defects to secure a liquid crystal drop margin. It is.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, a transverse electric field type liquid crystal display device of the present invention comprises a gate electrode and a gate line formed on the first substrate and a common line formed in the hole; A first insulating film formed on the first substrate; An active pattern formed on the gate electrode; A data line formed on the first substrate to define a pixel region crossing the source / drain electrode and the gate line electrically connected to the source / drain region of the active pattern; A second insulating film formed on the first substrate as an organic insulating film; A first contact hole removing a portion of the second insulating layer to expose a portion of the drain electrode; A plurality of first common electrodes and pixel electrodes disposed alternately in a pixel area of the first substrate to generate a transverse electric field, and second common electrodes disposed on the data line; A pixel electrode line formed on the common line and connected to the plurality of pixel electrodes and electrically connected to the drain electrode through the first contact hole; And a second substrate bonded to the first substrate while the cell gap is maintained by the first column spacer, wherein the second insulating layer and the pixel electrode line on the common line where the hole is formed have a step. The first column spacer is positioned and fixed in the stepped region.

In addition, the method of manufacturing a transverse electric field type liquid crystal display device of the present invention comprises the steps of forming a common electrode having a gate electrode, a gate line and a hole formed in the first substrate; Forming a first insulating film on the first substrate; Forming an active pattern on the first substrate; Forming a source electrode and a drain electrode on the first substrate, and forming a data line crossing the gate line to define a pixel region; Forming a second insulating film, which is an organic insulating film, on the first substrate; Removing a portion of the second insulating layer to form a first contact hole exposing a portion of the drain electrode; Forming a plurality of first common electrodes and pixel electrodes disposed alternately in a pixel region of the first substrate to generate a transverse electric field, and a second common electrode positioned above the data line; Forming a pixel electrode line formed on the common line and connected to the plurality of pixel electrodes and electrically connected to the drain electrode through the first contact hole; And bonding the first substrate and the second substrate to face each other in a state where a constant cell gap is maintained by a first column spacer, wherein the second insulating layer and the pixel electrode line on the common line where the hole is formed have a step difference. And form a stepped region, wherein the first column spacer is positioned and fixed within the stepped region.

As described above, the transverse electric field type liquid crystal display device and a method of manufacturing the same according to the present invention form a plurality of common electrodes and pixel electrodes with a transparent conductive material and at the same time form a common electrode on the data line to maximize the opening area. As a result, the effect of improving the aperture ratio of the pixel region can be obtained.

In addition, the transverse electric field type liquid crystal display device and the manufacturing method thereof according to the present invention adopts a dual column spacer structure and prevents the flow of the gap column spacer, thereby reducing touch defects, thereby securing a liquid crystal drop margin.

Hereinafter, exemplary embodiments of a transverse electric field type liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view schematically illustrating a portion of an array substrate of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.

At this time, although N gate lines and M data lines cross MxN pixels on the actual array substrate, one pixel is shown in the figure for simplicity of explanation.

In this case, as shown in FIG. 3, when the common electrode and the pixel electrode have a bent structure, the liquid crystal molecules are arranged in two directions to form a 2-domain, thereby further improving the viewing angle compared to the mono-domain. . However, the present invention is not limited to the two-domain transverse electric field liquid crystal display device, and the present invention can be applied to the transverse electric field liquid crystal display device having a multi-domain structure of two or more domains. As described above, the IPS structure for forming a multi-domain of two or more domains is called an S-IPS (Super-IPS) structure.

As shown in the figure, a gate line 116 and a data line 117 are formed on the array substrate 110 according to the embodiment of the present invention, which are arranged horizontally and horizontally on the array substrate 110 to define a pixel region. A thin film transistor, which is a switching element, is formed in an intersection region of the gate line 116 and the data line 117.

The thin film transistor includes a gate electrode 121 constituting a part of the gate line 116, a pixel electrode through a “U” shaped source electrode 122 connected to the data line 117, and a pixel electrode line 118l. And a drain electrode 123 electrically connected to 118. In addition, the thin film transistor includes a first insulating film (not shown) for insulating the gate electrode 121 and the source / drain electrodes 122 and 123 and a gate voltage supplied to the gate electrode 121. An active pattern (not shown) for forming a conductive channel between the 122 and the drain electrode 123 is included.

In this case, the source electrode 122 extends in one direction and is connected to the data line 117, and the drain electrode 123 extends toward the pixel region to form a first contact hole 140a formed in a second insulating layer (not shown). Is electrically connected to the pixel electrode line 118l and the drain electrode 123 through

In this case, although the shape of the source electrode 122 is "U" shaped and the channel is "U" shaped, for example, a thin film transistor is illustrated, but the present invention is not limited thereto. Applicable regardless of the channel type of the transistor.

In the pixel region, a plurality of common electrodes 108 and 108 'and a pixel electrode 118 are alternately formed to generate a transverse electric field, and the common electrodes 108 and 108' are formed at the center of the pixel region. The second common electrode 108 is formed so as to overlap the first common electrode 108 and the data line 117 is disposed alternately with the pixel electrode 118 to generate a transverse electric field to extend the opening region of the pixel. ').

In this case, the common electrodes 108 and 108 ′ and the pixel electrode 118 are arranged in a direction substantially parallel to the data line 117, and the second common electrode 108 ′ is connected to the first connection. Overlap with a portion of line 108a.

Here, a common line 108l according to an embodiment of the present invention is formed at a lower end of the pixel area in a direction substantially parallel to the gate line 116.

In this case, the common line 108l is connected to a pair of first connection lines 108a arranged in a direction substantially parallel to the data line 117, and the first connection line 108a is connected to the gate. The second connection line 108b is arranged in a direction substantially parallel to the line 116.

In addition, one end of the common electrode 108, 108 ′ is connected to a third connection line 108c arranged in a direction substantially parallel to the gate line 116, wherein the third connection line 108c is electrically connected to the second connection line 108b below the second contact hole 140b formed in the first insulating film and the second insulating film (not shown).

The common line 108l overlaps the pixel electrode line 118l therebetween with the first insulating film and the second insulating film interposed therebetween to form a storage capacitor Cst, and the storage capacitor Cst Serves to keep the voltage applied to the liquid crystal capacitor constant until the next signal comes in. The storage capacitor Cst has effects such as stability of gray scale display and reduction of flicker and afterimage in addition to signal retention.

In this case, a gate pad electrode 126p and a data pad electrode 127p electrically connected to the gate line 116 and the data line 117 are formed in an edge region of the array substrate 110. The scan signal and the data signal applied from the driving circuit unit are transferred to the gate line 116 and the data line 117, respectively.

That is, the data line 117 and the gate line 116 extend toward the driving circuit part and are connected to the data pad line 117p and the gate pad line 116p, respectively, and the data pad line 117p and the gate pad line ( The data 116p is configured to receive data from the driving circuit unit through the data pad electrode 127p and the gate pad electrode 126p that are electrically connected through the third contact hole 140c and the fourth contact hole 140d formed in the second insulating film. The signal and the scan signal are accepted.

In the transverse electric field liquid crystal display according to the exemplary embodiment of the present invention configured as described above, the plurality of common electrodes 108 and 108 ′ and the pixel electrode 118 are formed of indium tin oxide (ITO) or indium zinc (Zn-). Since it is formed of a transparent conductive material such as indium zinc oxide (IZO), it has the advantage of improving the aperture ratio.

In addition, the second insulating film according to the embodiment of the present invention is formed of an organic insulating film to substantially extend the opening area of the pixel as the second common electrode 108 ′ is formed on the data line 117. It becomes possible. In other words, since the second insulating layer is formed of an organic insulating layer having a low dielectric constant, the parasitic capacitance formed between the data line 117 and the other electrodes does not have to be taken into consideration. Since the common electrode 108 ′ can be formed, the aperture ratio of the pixel region can be improved.

In addition, a predetermined hole (not shown) is formed in a part of the common line 108l of the array substrate 110 according to the embodiment of the present invention, and the drain electrode 123 and the second insulating film and the pixel thereon. A predetermined stepped region D is formed in the electrode line 118l, and the above-described touch failure can be prevented by fixing the gap column spacer (not shown) of the upper color filter substrate to the stepped region D. FIG. Will be.

That is, when the common line 108l is patterned, a hole pattern is formed in a part of the common line 108l such that the upper layer, which is the region where the gap column spacer touches, has the stepped region D, thereby forming the gap column spacer. It can be prevented from moving by touch. As a result, the liquid crystal drop margin can be secured according to the decrease in touch failure.

In this case, the column spacer according to an embodiment of the present invention is a first column spacer, which serves to maintain a gap between the array substrate 110 and the color filter substrate, that is, the gap column spacer and the array substrate 110 or color. It is formed with a predetermined gap with the filter substrate to form a dual column spacer (dual column spacer) structure consisting of a second column spacer to increase the margin width of the liquid crystal by flowing the liquid crystal in the space equal to the gap. In this case, the first column spacer is positioned and fixed in the stepped area D, while the second column spacer is positioned on the common line 108l that does not have the gate line 116 or the stepped area, and is pressed. It will serve to prevent stains.

In the transverse electric field type liquid crystal display according to the exemplary embodiment of the present invention, a mask process is performed by using a half-tone mask or a diffraction mask (hereinafter, referred to as a half-tone mask). By simultaneously forming a source / drain electrode, a data line, and an active pattern, an array substrate can be fabricated by a total of four mask processes, which will be described in detail by the following method of manufacturing a transverse electric field type liquid crystal display device. However, the present invention is not limited to the number of the mask process.

4A through 4D are cross-sectional views sequentially illustrating a manufacturing process along lines IIIa-IIIa ', IIIb-IIIb, and IIIc-IIIc of the array substrate illustrated in FIG. 3, and a process of manufacturing an array substrate of a pixel portion is shown on the left side. The right side shows a step of manufacturing an array substrate of a data pad part and a gate pad part in order.

5A to 5D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 4.

As shown in FIGS. 4A and 5A, the gate line 116 including the gate electrode 121, the first connection line 108a, and the pixel portion of the array substrate 110 made of a transparent insulating material such as glass, A common line 108l having a second connection line 108b and a predetermined hole H is formed, and a gate pad line 116p is formed in the gate pad portion of the array substrate 110.

In this case, the first connection line 108a is formed at the left and right edges of the pixel region in a bent structure, one side of which is arranged on the upper portion of the pixel region in a direction substantially parallel to the gate line 116. 2 is connected to the connection line (108b). The other side of the first connection line 108a is connected to the common line 108l arranged at the bottom of the pixel region in a direction substantially parallel to the gate line 116.

The hole H may be formed in the common line 108l of all pixels, and may be formed only in the common line 108l of some pixels to form a stepped region in the upper layer to prevent the flow of the gap column spacer. It may be.

In this case, the gate electrode 121, the gate line 116, the first connection line 108a, the second connection line 108b, the common line 108l, and the gate pad line 116p form a first conductive layer in the array. After the deposition on the entire surface of the substrate 110 is formed by selectively patterning through a photolithography process (first mask process).

Here, the first conductive layer may include aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo), and Low resistance opaque conductive materials such as molybdenum alloys can be used. In addition, the first conductive layer may have a multilayer structure in which two or more low resistance conductive materials are stacked.

Next, as shown in FIGS. 4B and 5B, the gate electrode 121, the gate line 116, the first connection line 108a, the second connection line 108b, the common line 108l and the gate are shown. After the first insulating film 115a, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second conductive film are formed on the entire surface of the array substrate 110 on which the pad line 116p is formed, the photolithography process (second mask process) is optionally performed. The active pattern 124 formed of the amorphous silicon thin film is formed on the pixel portion of the array substrate 110, and the second conductive layer is formed to be electrically connected to the source / drain regions of the active pattern 124. Source / drain electrodes 122 and 123 to be connected are formed.

In this case, a data line 117 formed of the second conductive layer is formed in the data line region of the array substrate 110 through the second mask process, and the data pad portion of the array substrate 110 is formed on the data pad portion of the array substrate 110. A data pad line 117p made of two conductive films is formed.

In this case, an ohmic contact layer 125n formed of the n + amorphous silicon thin film and patterned in the same form as the source / drain electrodes 122 and 123 is formed on the active pattern 124.

In addition, a lower portion of the data line 117 and the data pad line 117p is formed of the amorphous silicon thin film and the n + amorphous silicon thin film, respectively, and is patterned in the same form as the data line 117 and the data pad line 117p. The first amorphous silicon thin film pattern 120 ', the second n + amorphous silicon thin film pattern 125 ", and the second amorphous silicon thin film pattern 120" and the third n + amorphous silicon thin film pattern 125' "are formed.

The gate insulating layer 115a, the active pattern 124, the ohmic contact layer 125n, and the drain electrode 123 are patterned to correspond to the hole pattern on the common line 108l where the hole is located. The predetermined stepped area D is formed.

In addition, the active pattern 124, the source / drain electrodes 122 and 123, the data line 117, and the data pad line 117p according to the first exemplary embodiment of the present invention may be formed by using a half-tone mask. The mask process (second mask process) is formed at the same time, the second mask process will be described in detail below with reference to the drawings.

6A through 6F are cross-sectional views illustrating a second mask process according to an exemplary embodiment of the present invention in the array substrate illustrated in FIGS. 4B and 5B.

As shown in FIG. 6A, the gate electrode 121, the gate line 116, the first connection line 108a, the second connection line 108b, the common line 108l, and the gate pad line 116p are formed. The gate insulating film 115a, the amorphous silicon thin film 120, the n + amorphous silicon thin film 125 and the second conductive layer 130 are formed on the formed array substrate 110.

In this case, the second conductive layer 130 is a low resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum and molybdenum alloy to form a source electrode, a drain electrode, a data line and a data pad line. It may be made of a material.

The gate insulating layer 115a, the amorphous silicon thin film 120, the n + amorphous silicon thin film 125, and the second conductive layer 130 are formed in the shape of the hole pattern on the common line 108l where the hole is located. As it is deposited so as to have a predetermined stepped area.

6B, after forming a photoresist film 170 made of a photosensitive material such as a photoresist on the entire surface of the array substrate 110, the half-tone mask 180 according to the embodiment of the present invention is formed. Light is selectively irradiated to the photosensitive film 170 through.

In this case, the half-tone mask 180 includes a first transmission region I transmitting all of the irradiated light, a second transmission region II transmitting only a part of the light, and blocking a portion of the light, and blocking all the irradiated light. The region III is provided, and only the light passing through the half-tone mask 180 is irradiated to the photosensitive film 170.

Subsequently, after developing the photoresist film 170 exposed through the half-tone mask 180, light passes through the blocking region III and the second transmission region II, as shown in FIG. 6C. The first photoresist pattern 170a to the fifth photoresist pattern 170e having a predetermined thickness remain in the blocked or partially blocked region, and the photoresist is completely removed in the first transmission region I through which all light is transmitted. The surface of the second conductive layer 130 is exposed.

In this case, the first photoresist pattern 170a to the fourth photoresist pattern 170d formed in the blocking region III are formed thicker than the fifth photoresist pattern 170d formed through the second transmission region II. In addition, the photosensitive film is completely removed in a region where all the light is transmitted through the first transmission region I. This is because the photoresist of the positive type is used, and the present invention is not limited thereto. May be used.

Next, as shown in FIG. 6D, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second formed on the lower portion of the first photosensitive film pattern 170a to the fifth photosensitive film pattern 170d formed as described above are used as a mask. When the conductive layer is selectively removed, the active pattern 124 made of the amorphous silicon thin film is formed in the pixel portion of the array substrate 110.

In this case, a data line 117 made of the second conductive layer is formed in the data line region of the array substrate 110, and a data pad made of the second conductive layer is formed in the data pad portion of the array substrate 110. Line 117p is to be formed.

In this case, the first n + amorphous silicon thin film pattern 125 ′ and the second conductive layer formed of the n + amorphous silicon thin film and the second conductive layer and patterned in the same shape as the active pattern 124, respectively, on the active pattern 124. The conductive film pattern 130 ′ is formed.

In addition, a lower portion of the data line 117 and the data pad line 117p is formed of the amorphous silicon thin film and the n + amorphous silicon thin film, respectively, and is patterned in the same form as the data line 117 and the data pad line 117p. The first amorphous silicon thin film pattern 120 ', the second n + amorphous silicon thin film pattern 125 ", and the second amorphous silicon thin film pattern 120" and the third n + amorphous silicon thin film pattern 125' "are formed.

Subsequently, when an ashing process of removing a portion of the first photoresist pattern 170a to the fifth photoresist pattern 170d is performed, as shown in FIG. 6E, the second transmission region II may be formed. The fifth photosensitive film pattern is completely removed.

In this case, the first photoresist pattern to the fourth photoresist pattern correspond to the blocking region III by the sixth photoresist pattern 170a 'through the ninth photoresist pattern 170d' where the thickness of the fifth photoresist pattern is removed. Only the source electrode region and the drain electrode region and the upper portion of the data line 117 and the data pad line 117p remain.

Subsequently, as shown in FIG. 6F, a portion of the first n + amorphous silicon thin film pattern and the second conductive film pattern using the remaining sixth photoresist pattern 170a ′ through the ninth photoresist pattern 170d ′ as a mask. The source electrode 122 and the drain electrode 123 formed of the second conductive layer are formed in the pixel portion of the array substrate 110 by removing the?

In this case, an ohmic contact layer formed of the n + amorphous silicon thin film on the active pattern 124 and ohmic-contacting between the source / drain region of the active pattern 124 and the source / drain electrodes 122 and 123. 125n is formed.

As described above, the first embodiment of the present invention uses a half-tone mask to mask the active pattern 124, the source / drain electrodes 122 and 123, the data line 117, and the data pad line 117p once. It can be formed through the process. However, the present invention is not limited thereto, and the active pattern 124 and the source / drain electrodes 122 and 123, the data line 117, and the data pad line 117p may be formed through two mask processes. It may be.

4C and 5C, the front surface of the array substrate 110 on which the active patterns 124, the source / drain electrodes 122 and 123, the data lines 117, and the data pad lines 117p are formed. The second insulating film 115b is formed on the substrate.

The first contact hole 140a exposing a part of the drain electrode 123 is formed by selectively removing a part of the second insulating film 115b using a photolithography process (a third mask process). At the same time, the second contact hole 140b exposing a part of the second connection line 108b is formed by selectively removing some regions of the first insulating film 115a and the second insulating film 115b.

The third contact hole exposing a portion of the data pad line 117p and the gate pad line 116p may be selectively removed by selectively removing a portion of the second insulating layer 115b using the third mask process. 140c) and a fourth contact hole 140d.

In this case, the second insulating film 115b according to the embodiment of the present invention may be formed of an organic insulating film having a low dielectric constant such as photoacryl to overlap the data line 117 with the second common electrode to be described later. It is possible to implement a high opening ratio structure.

That is, the structure of a general array substrate has a predetermined distance between the data line and the pixel electrode or the common electrode in order to prevent vertical cross talk due to signal interference between the data line and the pixel electrode or the common electrode. 형성) will be formed.

Since the separation region is a region in which light leakage occurs, a blocking portion is formed in the upper color filter substrate. Due to this structure, the aperture ratio is reduced and the luminance is also reduced. Accordingly, in order to solve this problem, the transverse electric field type liquid crystal display according to the exemplary embodiment of the present invention forms a thick organic insulating film with the second insulating film 115b, thereby forming the common electrodes 108 and 108 'and the lower data. It is possible to implement a high opening rate by preventing signal interference between the lines 117.

In addition, a step is formed in the second insulating layer 115 according to the shape of the lower layer to have a predetermined stepped area D on the upper surface thereof.

Next, as shown in FIGS. 4D and 5D, after forming a third conductive film made of a transparent conductive material on the entire surface of the array substrate 110 on which the second insulating film 115b is formed, a photolithography process (fourth mask) And selectively removing the third conductive film to form a pixel electrode line 118l electrically connected to the drain electrode 123 through the first contact hole 140a.

In addition, by selectively removing the third conductive layer through the fourth mask process, a plurality of common electrodes 108 and 108 ′ and pixel electrodes 118 are alternately disposed in the pixel region to generate a transverse electric field. The third connecting line 108c is electrically connected to the second connecting line 108b through the second contact hole 140b.

In addition, by selectively removing the third conductive layer by using the fourth mask process, the data pad line 117p and the gate pad line through the third contact hole 140c and the fourth contact hole 140d, respectively. A data pad electrode 127p and a gate pad electrode 126p electrically connected to 116p are formed.

In this case, the common electrodes 108 and 108 ′ overlap the first common electrode 108 and the data line 117 that are alternately disposed with the pixel electrode 118 at the center of the pixel region to generate a transverse electric field. And a second common electrode 108 'formed to extend the opening region of the pixel.

In this case, the common electrodes 108 and 108 ′ and the pixel electrode 118 are arranged in a direction substantially parallel to the data line 117, and the second common electrode 108 ′ is connected to the first connection. Overlap with a portion of line 108a.

The pixel electrode line 118l overlaps the common line 108l below the first insulating film 115a and the second insulating film 115b to form a storage capacitor Cst.

In this case, the third conductive layer is a transparent material having excellent transmittance such as indium tin oxide or indium zinc oxide to form the common electrodes 108 and 108a ', the pixel electrode 118, and the pixel electrode line 118l. Contains conductive material.

As described above, in the transverse electric field type liquid crystal display device according to the exemplary embodiment of the present invention, as the hole is formed in a part of the common line 108l, the stepped region D patterned in the shape of the hole pattern is formed on the upper layer. do.

The array substrate 110 according to the embodiment of the present invention configured as described above is bonded to the color filter substrate (not shown) by a sealant formed on the outer side of the image display area, wherein the thin film transistor and the gate are attached to the color filter substrate. A black matrix is formed to prevent light leakage into the line 116 and the data line 117, and a color filter for realizing red, green, and blue colors is formed.

At this time, the bonding of the color filter substrate and the array substrate 110 is performed through a bonding key formed on the color filter substrate or the array substrate 110, and the color filter substrate is disposed between the color filter substrate and the array substrate 110. A predetermined column spacer is formed to keep a gap between the array substrate 110 and the array substrate 110 constant.

FIG. 7 is a plan view schematically illustrating an array substrate including any two pixels in a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.

As shown in the drawing, the array substrate 110 according to the embodiment of the present invention may include the first pixel P1 having the stepped region D formed thereon as holes are formed in the common line 108l. Since no hole is formed in the common line 108l ′, the second pixel P2 may have a stepped area.

However, as described above, the present invention is not limited thereto, and the present invention is also applicable to a case in which a hole pattern is formed in a common line of all pixels and a stepped region is formed in an upper layer thereof.

FIG. 8 is a schematic cross-sectional view of a transverse electric field type liquid crystal display device according to a first exemplary embodiment in which the array substrate and the color filter substrate illustrated in FIG. 7 are bonded to each other, and FIG. 9 is an array substrate illustrated in FIG. Is a cross-sectional view schematically showing a transverse electric field type liquid crystal display device according to a first embodiment of the present invention, in which a color filter substrate is bonded to each other.

As shown in FIG. 8, the transverse electric field type liquid crystal display device according to the first exemplary embodiment of the present invention has column spacers 150a and 150b formed on the array substrate 110 and the color filter substrate 105 manufactured as described above. As a result, the cell filter is bonded to the color filter substrate 105 in a state where a constant cell gap is maintained.

In this case, the color filter substrate 105 is a color filter composed of a plurality of sub-color filters 107 for implementing red, green and blue colors on the transparent color filter substrate 105 and the sub-color filter 107. It is composed of a black matrix 106 to distinguish between and block the light transmitted through the liquid crystal layer 190.

The black matrix 106 may be patterned on the boundary region of the pixels to block leakage of light generated from the backlight of the lower portion of the liquid crystal display and to prevent color mixing of adjacent pixels.

In this case, an overcoat layer 109 may be further formed on the color filter, and the overcoat layer 109 may have a portion of the sub-color filters 107 formed on the black matrix 106. It serves to planarize the upper surface of the color filter by removing the step that occurs as the overlap.

For reference, reference numeral 190 denotes a liquid crystal layer formed between the array substrate 110 and the color filter substrate 105, and the liquid crystal layer 190 is the array substrate 110 or the color filter substrate using a dropping method. After the liquid crystal is dropped into the 105, the two substrates 105 and 110 are formed by bonding.

As described above, the column spacers 150a and 150b according to the first embodiment of the present invention have a first column spacer 150a which functions to maintain a gap between the array substrate 110 and the color filter substrate 105. That is, the gap column spacer and the array substrate 110 or the color filter substrate 105 is formed with a predetermined gap to flow the liquid crystal into the space as the gap to increase the margin width of the liquid crystal and at the same time to the external force such as pressing It is characterized by forming a dual column spacer structure consisting of a second column spacer 150b, ie a pressing spacer, to counter.

In this case, the first column spacer 150a according to the first exemplary embodiment of the present invention is positioned and fixed in the stepped area D, while the second column spacer 150b is positioned above the gate line 116. It serves to prevent staining by pressing.

That is, since the second column spacer 150b is spaced apart from the array substrate 110 or the color filter substrate 105 by a predetermined interval, when the liquid crystal is excessive, the second column spacer 150b and the substrate 105 are disposed. Since the liquid crystal may move to the spaced between the 110 and 110, the liquid crystal may act as a resistance component when pressure is applied to the liquid crystal display panel, thereby preventing the staining of the liquid crystal display panel.

As the hole is formed in a part of the common line 108l, the first column spacer 150a may have a stepped region formed on the drain electrode 123, the second insulating layer 115b, the pixel electrode line 118l, and the like. It is located inside and fixed. As a result, the first column spacer 150a is prevented from being moved by being pressed, thereby securing a liquid crystal drop margin.

In addition, as shown in FIG. 9, in the transverse electric field type liquid crystal display device according to the second embodiment of the present invention, the column spacer 150a formed on the array substrate 110 and the color filter substrate 105 manufactured as described above are used. 150b ') is formed by being bonded to the color filter substrate 105 in a state where a constant cell gap is maintained, wherein the second column spacer 150b' is formed on the common line 108l 'that does not have a stepped area. Except for the above, the same components as those of the transverse electric field type liquid crystal display device of the first embodiment are used.

That is, the column spacers 150a and 150b 'according to the second embodiment of the present invention may have a first column spacer 150a which functions to maintain a gap between the array substrate 110 and the color filter substrate 105. And a second column spacer 150b 'for widening the margin width of the liquid crystal and counteract an external force such as pressing. In this case, the first column spacer 150a according to the second embodiment of the present invention is positioned and fixed in the stepped area D above the pixel electrode line 118l, while the second column spacer 150b 'is stepped. It is located above the pixel electrode line 118l 'which does not have an area, and serves to prevent staining by pressing.

As described above, since the second column spacer 150b 'is spaced apart from the array substrate 110 or the color filter substrate 105 by a predetermined interval, when the liquid crystal is excessive, the second column spacer 150b' is disposed. Since the liquid crystal may move to the spaces between the substrates 105 and 110, it may act as a resistance component when pressure is applied to the liquid crystal display panel, thereby preventing the staining of the liquid crystal display panel. do.

As described above, the transverse electric field type liquid crystal display device according to the first and second embodiments forms a hole in a part of the common line 108l so that the first column spacer 150a is formed in the stepped area D thereon. By positioning and fixing, it is possible to reduce touch failure, and as a result, it is possible to secure a liquid crystal drop margin.

That is, as shown in FIG. 10, the liquid crystal drop margin indicates a process margin for the amount of liquid crystal dropping which will not cause defects such as touch failure and gravity failure. The first column spacer is fixed in the stepped area as described above. When the touch failure is reduced, the drop margin of the liquid crystal is increased in the L direction.

The present invention can be used not only in liquid crystal display devices, but also in other display devices fabricated using thin film transistors, for example, organic light emitting display devices in which organic light emitting diodes (OLEDs) are connected to driving transistors.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

1 is a plan view schematically illustrating a portion of an array substrate of a general transverse electric field type liquid crystal display device;

2 is a cross-sectional view schematically illustrating a structure of a general transverse electric field type liquid crystal display device.

3 is a plan view schematically illustrating a portion of an array substrate of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.

4A to 4D are cross-sectional views sequentially showing manufacturing processes taken along lines IIIa-IIIa ', IIIb-IIIb, and IIIc-IIIc of the array substrate shown in FIG.

5A through 5D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 3.

6A to 6F are cross-sectional views illustrating a second mask process according to an embodiment of the present invention in the array substrate shown in FIGS. 4B and 5B.

7 is a plan view schematically showing an array substrate including any two pixels in a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention in which an array substrate and a color filter substrate shown in FIG. 7 are bonded to each other.

FIG. 9 is a cross-sectional view schematically illustrating a transverse electric field type liquid crystal display device according to a second embodiment of the present invention in which the array substrate and the color filter substrate shown in FIG. 7 are bonded to each other.

FIG. 10 is a diagram for schematically explaining securing a liquid crystal drop margin according to a decrease in touch failure; FIG.

** Explanation of symbols for main parts of drawings **

108: first common electrode 108 ': second common electrode

108a: first connection line 108b: second connection line

108c: 3rd connection line 108l, 108l ': common line

116: gate line 117: data line

118: pixel electrode 118l, 118l ': pixel electrode line

121: gate electrode 123: source electrode

123: drain electrode 150a: first column spacer

150b, 150b ': second column spacer

Claims (17)

Forming a common line having a gate electrode, a gate line, and a hole formed in a portion of the first substrate; Forming a first insulating film on the first substrate; Forming an active pattern on the first substrate; Forming a source electrode and a drain electrode on the first substrate, and forming a data line crossing the gate line to define a pixel region; Forming a second insulating film, which is an organic insulating film, on the first substrate; Removing a portion of the second insulating layer to form a first contact hole exposing a portion of the drain electrode; Forming a plurality of first common electrodes and pixel electrodes disposed alternately in a pixel region of the first substrate to generate a transverse electric field, and a second common electrode positioned above the data line; Forming a pixel electrode line formed on the common line and connected to the plurality of pixel electrodes and electrically connected to the drain electrode through the first contact hole; And And bonding the first substrate and the second substrate to face each other while maintaining a constant cell gap by a first column spacer, wherein the second insulating layer and the pixel electrode line on the common line where the hole is formed have a step. Forming a stepped region and fixing the first column spacer in the stepped region. The transverse electric field liquid crystal display of claim 1, further comprising forming a first connection line arranged in a direction substantially parallel to the data line and connected to the common line. Way. The transverse electric field liquid crystal display device according to claim 1, further comprising forming a second connection line arranged in a direction substantially parallel to the gate line and connected to the first connection line. Manufacturing method. The method of claim 1, wherein a part of the drain electrode extends toward the pixel area and overlaps a part of the common line. The method of claim 1, wherein the first common electrode, the second common electrode, and the pixel electrode are formed in a direction substantially parallel to the data line. The transverse electric field method of claim 1, further comprising forming a second contact hole exposing a portion of the second connection line by removing a portion of the first insulating layer and the second insulating layer. Method of manufacturing a liquid crystal display device. The third connection line of claim 6, wherein the third connection line is arranged in a direction substantially parallel to the gate line and connected to the second common electrode and electrically connected to the second connection line through the second contact hole. The manufacturing method of the transverse electric field type liquid crystal display device further comprising the step of forming. 2. The method of claim 1, further comprising forming a second column spacer positioned on the gate line to prevent crushing stains. The method according to claim 1, further comprising forming a second column spacer positioned on the common line where no hole is formed to prevent crushing. A gate line and a gate line formed on the first substrate, and a common line having holes formed in a portion thereof; A first insulating film formed on the first substrate; An active pattern formed on the gate electrode; A data line formed on the first substrate to define a pixel region crossing the source / drain electrode and the gate line electrically connected to the source / drain region of the active pattern; A second insulating film formed on the first substrate as an organic insulating film; A first contact hole removing a portion of the second insulating layer to expose a portion of the drain electrode; A plurality of first common electrodes and pixel electrodes disposed alternately in a pixel area of the first substrate to generate a transverse electric field, and second common electrodes disposed on the data line; A pixel electrode line formed on the common line and connected to the plurality of pixel electrodes and electrically connected to the drain electrode through the first contact hole; And And a second substrate bonded to the first substrate in a state in which a constant cell gap is maintained by the first column spacer, wherein the second insulating layer and the pixel electrode line on the common line where the hole is formed have a step, having a stepped region. And the first column spacer is positioned and fixed within the stepped area. The transverse electric field liquid crystal display of claim 10, further comprising a first connection line arranged in a direction substantially parallel to the data line and connected to the common line. The transverse electric field liquid crystal display device of claim 10, further comprising a second connection line arranged in a direction substantially parallel to the gate line and connected to the first connection line. The transverse electric field liquid crystal display device according to claim 10, wherein the first common electrode, the second common electrode, and the pixel electrode are arranged in a direction substantially parallel to the data line. The transverse electric field liquid crystal display device according to claim 10, further comprising a second contact hole for removing a portion of the first insulating film and the second insulating film to expose a portion of the second connection line. 15. The display device of claim 14, further comprising: a third connection line arranged in a direction substantially parallel to the gate line and connected to the second common electrode and electrically connected to the second connection line through the second contact hole. Transverse electric field type liquid crystal display device characterized in that it further comprises. 12. The transverse electric field liquid crystal display device according to claim 10, further comprising a second column spacer positioned above the gate line to prevent crushing stains. The transverse electric field liquid crystal display device according to claim 10, further comprising a second column spacer positioned above the common line where no hole is formed to prevent crushing.

Images