KR20090047879A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
KR20090047879A
KR20090047879A KR1020070113956A KR20070113956A KR20090047879A KR 20090047879 A KR20090047879 A KR 20090047879A KR 1020070113956 A KR1020070113956 A KR 1020070113956A KR 20070113956 A KR20070113956 A KR 20070113956A KR 20090047879 A KR20090047879 A KR 20090047879A
Authority
KR
South Korea
Prior art keywords
package
led chip
light emitting
lead frame
emitting diode
Prior art date
Application number
KR1020070113956A
Other languages
Korean (ko)
Inventor
신현수
이정표
Original Assignee
삼성전기주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전기주식회사 filed Critical 삼성전기주식회사
Priority to KR1020070113956A priority Critical patent/KR20090047879A/en
Publication of KR20090047879A publication Critical patent/KR20090047879A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting diode package, and more particularly, to a package formed to have a lead frame formed of one or more lead terminals, a part of the lead frame accommodated therein, and a radiation window opened to emit light, and An LED chip mounted on an inner bottom surface of the package exposed through a window, an electrode connection part for energizing the LED chip and the leadframe, and a molding material filled in the package to protect the LED chip. Provided is a light emitting diode package.

Light Emitting Diodes, Package, Luminance

Description

Light Emitting Diode Package

The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package of a lead frame-molded method having excellent luminance characteristics.

In general, a light emitting diode (LED) is an electronic component that generates a small number of carriers (electrons or holes) injected by using a p-n junction structure of a semiconductor and emits light by recombination thereof. In other words, when a forward voltage is applied to a semiconductor of a specific element, electrons and holes move through the junction of the anode and the cathode and recombine with each other. Release.

Such a light emitting diode can be irradiated with high efficiency light at low voltage, and thus is used in home appliances, remote controls, electronic signs, indicators, and various automation devices.

In particular, according to the trend toward miniaturization and slimming of information and communication devices, various components such as resistors, capacitors, and noise filters are becoming more compact, and surface-mounted light emitting diodes are directly mounted on a printed circuit board (PCB). It is made of a device (Surface Mount Device, hereinafter referred to as SMD).

The SMD type LED package is manufactured in a top view method and a side view method according to its use.

Next, a light emitting diode package according to the prior art will be described in detail with reference to FIG. 1.

Referring to FIG. 1, a light emitting diode package according to the related art includes a lead frame 150 formed of a pair of lead terminals and a package 110 formed of a synthetic resin material to accommodate a portion of the lead frame 150 therein. And an LED chip 130 mounted on the lead frame 150 positioned in the package 110, an electrode connection 140 for energizing the LED chip 130 and the lead frame 150. In addition, the package 110 is filled with a molding material 120 to protect the LED chip 130 and the electrode connecting portion 140. In this case, the LED chip 130 is fixed on the package 110 through the transparent resin 160 located at the interface between the LED chip 130 and the package 110.

On the other hand, in general, the general criteria for determining the characteristics of the LED chip is the color (color), luminance, intensity range of the brightness, etc., the characteristics of the LED chip is primarily determined by the material of the compound semiconductor used in the LED chip Incidentally, the structure of the package for mounting the LED chip and the molding material filled therein are affected. In particular, the internal structure of the light emitting diode package has a great influence on the luminance and the respective distributions of the luminance.

However, the LED package according to the related art described above is mounted on the lead frame 150 located inside the package 110, and the LED chip 130 is mounted on the lead frame 150. The transparent resin 160 is positioned at an interface between the bottom surface of the LED chip 130 and the package 110 to be mounted on the LED chip 130, and then the LED chip 130 is led through the transparent resin 160 to the lead frame 150. ) Is being fixed.

However, since the LED chip emits light emitted from itself toward the radiation window of the package, that is, toward the upper direction as well as the left, right and lower directions, the LED chip is fixed to the bottom surface of the LED chip. When there is a transparent epoxy for the light, the light emitted from the LED chip to the bottom surface of the light emitted from the transparent epoxy absorbs and scatters, so compared to the light emitted from the LED chip state of the light emitted after mounting on the lead frame There is a problem that is lowered.

Meanwhile, in order to solve such a problem, the lead frame is conventionally plated with silver having high reflectivity (Ag) to minimize the amount of light that is radiated to the bottom of the LED chip to be absorbed and scattered into the transparent epoxy, but the reflectance of the plating material Due to the limitations, there was a limit in improving luminance.

The present invention is to provide a light emitting diode package having a high brightness by mounting the LED chip on a package surface made of a material having a high reflectance rather than a lead frame in order to solve the above problems.

In order to achieve the above object, the present invention provides a lead frame formed of one or more lead terminals, a package formed to receive a portion of the lead frame therein, and having a radiation window opened to emit light, and a radiation window A light emitting diode including a LED chip mounted on an inner bottom surface of the package exposed through the package, an electrode connection part for energizing the LED chip and the lead frame, and a molding material filled in the package to protect the LED chip Provide a diode package.

In addition, in the light emitting diode package of the present invention, the package is preferably accommodated in the package to cover a part of the lead frame exposed through the radiation window, wherein the LED chip is a part of the lead frame It is preferable to mount on the surface of the package which covers.

In the light emitting diode package of the present invention, the package is preferably made of PPA or PA.

In addition, in the LED package of the present invention, the LED chip is preferably mounted on the inner bottom surface of the package so that both ends are over the adjacent lead frame.

According to the present invention, a light emitting diode package having high brightness can be realized by mounting an LED chip on a surface of a package made of a material having high reflectance and reflecting light emitted from the lower portion of the LED chip toward the radiation window of the package. have.

Details of the technical configuration of the light emitting diode package of the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity.

Example  One

The structure of the light emitting diode package according to the first embodiment of the present invention will be described in detail with reference to FIG. 2.

2 is a cross-sectional view schematically showing the structure of a light emitting diode package according to a first embodiment of the present invention.

Referring to FIG. 2, the light emitting diode package according to the first embodiment of the present invention has a package 110 having a cavity formed in the center thereof, and a predetermined surface of the package 110 is opened to easily emit light. The radiated window is formed, and on the other side, a lead frame 150 including a pair of lead terminals is formed to be mounted on a printed circuit board (not shown).

More specifically, the package 110 accommodates a portion of the lead frame 150 therein, except for the portion in which the lead frame 150 is accommodated, that is, the inner sidewall and the inner bottom of the package 110. The face is exposed through the radiation window.

In particular, the package 110 according to the present invention is preferably made of PPA or PA. This is to improve the extraction efficiency of light emitted from the LED chip by using the light emitted from the LED chip to be described later as a means for re-reflecting the light emitted to the bottom surface of the package 110 toward the radiation window.

In addition, on the inner bottom surface of the package 110 configured as described above, the LED chip 130 is mounted so that the light emitting surface thereof faces the radiation window of the package 110.

Accordingly, the light emitting diode package according to the present invention has a radiation window of the package 110 rather than the light emitting diode package according to the prior art (see FIG. 1) in which an LED chip is mounted on a lead frame made of metal plated with silver (Ag). The amount of light that can be reflected back toward the light source can be increased, and as a result, excellent luminance characteristics can be obtained than the light emitting diode package according to the prior art.

The LED chip 130 and the lead frame 150 are electrically connected to each other through an electrode connector 140.

In this case, the electrode connection unit 140 is a connection means for electrically connecting the LED chip 130 and the lead frame 150, in this embodiment used a wire.

In the package 110 in which the LED chip 130 is mounted, a molding material 120 protecting the LED chip 130 and the electrode connector 140 is filled. Here, the molding material 120 is made of any one selected from a transparent epoxy, silicon or phosphor mixture in order to transmit the light emitted from the LED chip 130 mounted on the package 110 to the outside.

Example  2

A light emitting diode package according to a second embodiment of the present invention will be described in detail with reference to FIG. 3. However, the description of the same parts as those of the first embodiment of the configuration of the second embodiment will be omitted, and only the configuration that is different from the second embodiment will be described in detail.

3 is a schematic cross-sectional view of a light emitting diode package according to a second embodiment of the present invention.

As shown in FIG. 3, the light emitting diode package according to the second embodiment has the same configuration as the light emitting diode package according to the first embodiment, except that the LED chip 130 is disposed on the inner bottom surface of the package 110. It is mounted, but differs from the first embodiment only in that its end portion is formed to span the adjacent lead frame 150.

Thus, the second embodiment also has the same operation and effect as in the first embodiment because, like the first embodiment, the LED chip 130 is mounted on the inner bottom surface of the package 110 made of PPA or PA. Can be obtained.

In addition, since the second embodiment is formed so that the end of the LED chip 130 is over the adjacent lead frame 150, an electrode for electrically connecting the LED chip 130 and the lead frame 150 The connection part 140 may be made of a conductive adhesive or a bump ball according to the characteristics of the device and the process conditions as well as the wire.

In particular, the conductive bonding agent, the LED chip 130 can be more stably fixed on the lead frame 150 than the wire, while the LED chip 130 is connected to the lead frame 150 without a separate connection wiring such as a wire ) And electrically connected, there is an advantage that can prevent the light emitting surface of the package 110 is lost by a separate connection wiring.

In addition, the conductive bonding agent is preferably made of a conductive material having high thermal conductivity, for example, silver (Ag), in order to improve heat dissipation characteristics of heat generated from the LED chip 130.

In addition, in the LED package according to the second embodiment, since the end portion of the LED chip 130 is connected to a part of the lead frame 150, a part of the heat generated from the LED chip 130 is transferred to the lead frame ( Since it is possible to radiate heat through 150, the heat dissipation characteristics are superior to the light emitting diode package according to the first embodiment.

Example  3

A light emitting diode package according to a third embodiment of the present invention will be described in detail with reference to FIG. 4. However, the description of the same parts as those of the first embodiment of the configuration of the third embodiment will be omitted, and only the configuration that is different from the second embodiment will be described in detail.

4 is a schematic cross-sectional view of a light emitting diode package according to a third embodiment of the present invention.

As shown in FIG. 4, the light emitting diode package according to the third embodiment has the same configuration as the light emitting diode package according to the first embodiment, except that an inner portion of the package 110 is inside the package 110. Is injected to cover a portion of the lead frame 150 that is accommodated in and exposed through the radiation window, the LED chip 130 on the surface of the package 110 covering a portion of the lead frame 150 It differs from the first embodiment only in that it is mounted.

Accordingly, the third embodiment also has the same effect and effect as in the first embodiment because, like the first embodiment, the LED chip 130 is mounted on the inner bottom surface of the package 110 made of PPA or PA. Can be obtained.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

1 is a cross-sectional view schematically showing a light emitting diode package according to the prior art.

2 is a schematic cross-sectional view of a light emitting diode package according to a first embodiment of the present invention;

3 is a schematic cross-sectional view of a light emitting diode package according to a second embodiment of the present invention;

4 is a schematic cross-sectional view of a light emitting diode package according to a third embodiment of the present invention;

<Explanation of symbols for the main parts of the drawings>

110: package 120: molding material

130: LED chip 140: electrode connection

150: lead frame 160: transparent resin

Claims (5)

A lead frame formed of at least one pair of lead terminals; A package configured to receive a portion of the lead frame therein and have a radiation window opened to emit light; An LED chip mounted on an inner bottom surface of the package exposed through a radiation window; An electrode connection part for energizing the LED chip and the lead frame; And And a molding material filled in the package to protect the LED chip. The method of claim 1, The package is a light emitting diode package that is accommodated in the package to cover a portion of the lead frame exposed through the radiation window. The method of claim 2, The package is a light emitting diode package, characterized in that consisting of PPA or PA. The method of claim 2, The LED chip is mounted on the surface of the package covering a portion of the lead frame. The method of claim 1, Wherein the LED chip is mounted on an inner bottom surface of the package such that both ends thereof span the adjacent lead frame.
KR1020070113956A 2007-11-08 2007-11-08 Light emitting diode package KR20090047879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070113956A KR20090047879A (en) 2007-11-08 2007-11-08 Light emitting diode package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070113956A KR20090047879A (en) 2007-11-08 2007-11-08 Light emitting diode package

Publications (1)

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KR20090047879A true KR20090047879A (en) 2009-05-13

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Family Applications (1)

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KR1020070113956A KR20090047879A (en) 2007-11-08 2007-11-08 Light emitting diode package

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104247057A (en) * 2012-02-27 2014-12-24 Lg伊诺特有限公司 Light emitting device package
US8987022B2 (en) 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8987022B2 (en) 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same
CN104247057A (en) * 2012-02-27 2014-12-24 Lg伊诺特有限公司 Light emitting device package
EP2820685A4 (en) * 2012-02-27 2015-09-30 Lg Innotek Co Ltd Light emitting device package
US9293672B2 (en) 2012-02-27 2016-03-22 Lg Innotek Co., Ltd. Light emitting device package

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