KR20090041872A - Method of manufacturing organic light emitting diode display device - Google Patents

Abstract

A method for manufacturing an organic light emitting diode display device is provided to block external moisture and oxygen by performing an encapsulation process. A first substrate(100) is prepared. A plurality of pixels are defined on the first substrate. A first electrode(110) is formed on the first substrate. A buffer pattern(115) is formed on the first electrode along the periphery of each pixel. A sealing member is formed along the edge of the first substrate. The sealing member includes low meting point glass. The sealing member is pre-sintered. A protrusion member(135) and a separator(125) are formed on the buffer pattern. An organic light emitting pattern(120) is formed on the first electrode. A second electrode is formed in the organic light emitting pattern. The second substrate is aligned with the first substrate. The first substrate and the second substrate are bonded with the sealing member.

Description

Manufacturing method of organic light emitting diode display device {METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE}

The present invention relates to an organic light emitting diode display, and more particularly, to a method of manufacturing an organic light emitting diode display capable of improving lifetime and reliability.

Recently, the organic light emitting diode display is self-luminous and does not require a backlight, such as a liquid crystal display, so that it is not only light and thin, but also can be manufactured through a simple process, thereby increasing price competitiveness. In addition, organic light emitting diode display devices are rapidly rising as next generation displays due to low voltage driving, high luminous efficiency, and wide viewing angle.

The organic light emitting diode display device uses light through electrons and holes to form electron-hole pairs in a semiconductor, or carriers are excited to a higher energy state and then fall back to a stabilized ground state. This phenomenon is used. As such, since the organic light emitting diode display device is a self-luminous type, a separate backlight is not required compared to the liquid crystal display market value. In addition, since it is possible to drive a DC low voltage, the response speed is fast, and all solid, it is strong against external shock and has a wide range of use temperature.

Conventionally, such an organic light emitting diode display device performs an encapsulation process of bonding the substrate on which the array element and the organic light emitting diode element are formed with a separate encapsulation substrate, and the organic light emitting diode element to external moisture and oxygen. Protect from This is because the organic light emitting diode device is vulnerable to moisture and oxygen, so that black spots may be generated, the life may be shortened, and reliability may be degraded at high temperature and high humidity.

However, the present material is mainly used as a UV curable resin. The UV curable resin is organic, which does not effectively block external moisture and oxygen, thereby shortening the lifespan of the organic light emitting diode display device and decreasing reliability at high temperature and high humidity. There was a problem.

One object of the present invention is to provide a method of manufacturing an organic light emitting diode display device that can minimize damage and deformation of the sealing member to effectively block external moisture and oxygen to secure reliability and improve life. have.

In order to achieve the above technical problem, an aspect of the present invention provides a method of manufacturing an organic light emitting diode display. The manufacturing method includes providing a first substrate on which pixels are defined, forming a first electrode on the first substrate, forming a buffer pattern on the first electrode along the periphery of the pixel, and Forming a sealing member including low melting glass along an edge of the first substrate, pre-sintering the sealing member, forming a protrusion member and a separator on the buffer pattern, and forming an organic material on the first electrode. Forming a light emitting pattern, forming a second electrode on the organic light emitting pattern, aligning a second substrate having a thin film transistor formed on the substrate including the second electrode, and using the sealing member And electrically bonding the second electrode and the thin film transistor to the first substrate and the second substrate.

According to the method of manufacturing the organic light emitting diode display device according to the present invention, the sealing process using the low melting point glass may be performed to effectively block external moisture and oxygen, thereby ensuring the reliability of the organic light emitting diode display device and improving its lifetime. .

In addition, the step of applying the sealing member on the substrate is performed after the pattern process of the conductive film or inorganic film on the substrate, the etching member or strip solution used in the pattern process of the conductive film or inorganic film It is possible to prevent damage and deformation by the.

In addition, after aging the substrate, as the process is performed, it is possible to minimize the deformation and misalignment of the substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the organic light emitting diode display. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

1A to 1G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a first embodiment of the present invention. 1A to 1G illustrate one pixel for convenience of description.

Referring to FIG. 1A, to manufacture an organic light emitting diode display, a first substrate 100 in which a plurality of pixels are defined is provided.

The first substrate 100 may be made of a transparent material that can transmit light. For example, the first substrate 100 may be a glass substrate.

The process of aging the first substrate 100 is performed. The aging process may be a process of heat-treating the first substrate 100. This can minimize deformation of the first substrate in a subsequent process, in particular, pre-sintering of the sealing member, and can prevent the position of the initial alignment key from being deformed.

The preliminary sintering process may be performed at about 450 ℃ or more. In addition, when the first substrate 100 is placed in an environment of 500 ° C. or more, the first substrate 100 may be damaged. In consideration of this, the aging process may be a process of exposing the first substrate 100 to an environment having a temperature range at 350 to 500 ° C.

Trenchs may be formed along edges of the first substrate 100. The trench is an area where a sealing member to be described later is formed.

The auxiliary electrode 105 may be formed along the periphery of the pixel of the first substrate 100. In order to form the auxiliary electrode 105, first, a conductive material of a low resistance body is deposited on the first substrate 100 in comparison with the first electrode 110 to be described later. Thereafter, a photoresist pattern having a predetermined pattern is formed on the conductive layer. Thereafter, the conductive layer is etched using the photoresist pattern as an etching mask. As a result, the auxiliary electrode 105 can be formed. For example, the conductive material of the low resistor may be Al, AlNd, Mo, Cr, or the like. The auxiliary electrode 105 serves to prevent a voltage drop of the first electrode 110 that occurs when the first electrode 110 is formed in common. Accordingly, the auxiliary electrode 105 can form a uniform image quality on the entire screen.

The first electrode 110 is formed on the first substrate 100. The first electrode 110 is integrally formed in every pixel. The first electrode 110 is made of a conductive material that can transmit light. For example, the conductive material may be ITO or IZO. The first electrode 110 may be formed by a sputtering method.

A buffer pattern 115 is formed along the periphery of each pixel on the first electrode 110. In order to form the buffer pattern 115, an insulating film is formed on the first electrode 110. The insulating film may be any one of a silicon oxide film, a silicon nitride film, and a stacked film thereof. The insulating layer may be formed through chemical vapor deposition (PECVD). Thereafter, a photoresist pattern with a portion of the opening formed on the insulating layer is formed. Thereafter, the insulating layer is etched using the photoresist pattern as an etching mask to form the buffer pattern 115.

Referring to FIG. 1B, a first sealing member 300 is formed in the trench T. Referring to FIG. The first sealing member 300 may include a low melting glass, for example, a frit powder 300a and a binder 300b for fixing the frit powder 300a to the first substrate 100. The frit powder 300a has a lower moisture permeability and air permeability than UV curable resins, thereby improving life and reliability of the organic light emitting diode device from external moisture and oxygen.

As the first sealing member 300 is disposed in the trench T, a cell gap between the first substrate and the second substrate to be described later may be reduced. This is because the cell gap between the first substrate and the second substrate to be described later may increase because the frit powder 300a has a size of at least 10 μm.

Referring to FIG. 1C, the first sealing member 300 is pre-sintered to form a second sealing member 310. Through the preliminary sintering process, the binder resin 300b of the first sealing member 300 is removed. In this case, as the presintering process is performed at about 450 ° C., the first substrate 100 may be deformed. However, by performing an aging process on the first substrate 100, deformation of the first substrate 100 may be minimized.

In addition, since the second sealing member 310 is formed after the auxiliary electrode 105, the first electrode 110, and the buffer pattern 115 are formed, deformation and damage may be minimized. The second sealing member 310 may be formed by an etching solution, a developing solution or a strip solution used in the process of forming the auxiliary electrode 105, the first electrode 110, and the buffer pattern 115. It can be deformed and damaged.

By preventing the second sealing member 310 from being deformed and damaged, moisture and oxygen can be prevented from being introduced into the organic light emitting diode device, thereby improving lifespan and reliability of the organic light emitting diode display.

Referring to FIG. 1D, a protrusion member 135 protruding upward is formed on the buffer pattern 115. The protrusion member 135 is formed in a positive tapered shape. For example, the cross-sectional shape of the protrusion 135 is formed in a regular trapezoidal shape.

In order to form the protrusion member 135 in a pillar shape, it should be formed to have a certain thickness. As a result, the protrusion member 135 may be formed of an organic material which is advantageous to form a constant thickness. For example, the organic material may be an acrylic resin, a urethane resin, benzocyclobutene (BCB), polyimide (PI), or the like. In order to form the protrusion member 135, the organic material may be coated on the first substrate including the buffer pattern 115 to form an organic film, and then formed through the exposure and development processes on the organic film. have.

The separator 125 is formed along the edge of the buffer pattern 115. The separator 125 serves to naturally pattern the second electrode 130 to be described later for each pixel without a separate patterning process. Thus, the cross section of the separator 125 may have an inverted trapezoidal shape.

In order to form the separator 125, an organic layer is formed on the substrate including the buffer pattern 115. The organic film can be formed of acrylic resin, urethane resin, benzocyclobutene (BCB), polyimide (PI), or the like. The separator 125 may be formed on the organic layer through exposure and development.

In the embodiment of the present invention, the forming order of the separator 125 and the protrusion 135 is not limited. That is, after the protrusion 135 is formed, the partition wall 125 may be formed.

Referring to FIG. 1E, the organic light emitting pattern 120 is formed on the first substrate 100 including the separator 125 and the protrusion 135. The organic light emitting pattern 120 may be formed of a light emitting material including light emitting molecules for generating light according to the flow of current. The light emitting material may be a low molecular or high molecular material. When the light emitting material is a low molecular material, the organic light emitting pattern 120 may be formed through a deposition process using a shadow mask M having a stripe-shaped opening. In addition, when the light emitting material is a polymer material, it may be formed through a printing method.

The second electrode 130 is formed on the organic light emitting pattern 120. The second electrode 130 may be formed through a vacuum deposition method. In this case, the second electrode 130 is naturally patterned for each pixel by the separator 125. As a result, the second electrode 130 may be formed without undergoing a separate shadow mask and an etching process.

In this case, a part of the second electrode 130 is formed covering the protrusion member 135. Accordingly, a part of the second electrode 130 may protrude upward by the protrusion member 135.

Referring to FIG. 1F, in addition to forming an organic light emitting diode on the first substrate 100, a second substrate 200 having a thin film transistor Tr is provided.

In detail, in order to form a thin film transistor on the second substrate 200, first, the second substrate 200 is provided. The second substrate 200 may be made of plastic, glass, or metal. The gate electrode 205 is formed on the second substrate 200. Thereafter, the gate insulating layer 210 is formed over the entire surface of the second substrate 200 including the gate electrode 205. The gate insulating layer 210 may be formed by depositing silicon oxide or silicon nitride by chemical vapor deposition.

The semiconductor layer 215 is formed on the gate insulating layer 210 to which the gate electrode 205 corresponds. The semiconductor layer 215 may be formed by sequentially stacking an amorphous silicon film and an amorphous silicon film doped with P-type or N-type impurities, followed by patterning.

A conductive metal is deposited on the semiconductor layer 215 and then patterned to form source / drain electrodes 225 and 235 spaced apart from each other with a channel interposed therebetween.

Accordingly, the thin film transistor Tr including the gate electrode 205, the semiconductor layer 215, and the source / drain electrodes 225 and 235 may be formed on the second substrate 200. Here, in the drawings, the present invention has been described with reference to only one thin film transistor formed on the second substrate 200. However, at least one thin film transistor and a capacitor may be further formed on the second substrate 200.

Further, in the process of forming the thin film transistor Tr, a plurality of wires for applying an electrical signal to the thin film transistor Tr, for example, a gate wire, a data wire, a power wire, and the like, may be further formed.

In addition, the thin film transistor Tr has been described as being limited to forming a bottom gate thin film transistor using amorphous silicon. However, the thin film transistor Tr is not limited thereto and may employ various known thin film transistors.

The passivation layer 220 is formed over the entire surface of the second substrate 200 including the thin film transistor Tr. The protective layer 220 may be formed of silicon nitride or silicon oxide, and may be formed by performing chemical vapor deposition. A contact hole for exposing the drain electrode 235 is formed in the passivation layer 220. In addition, a contact electrode 245 may be further formed on the drain electrode 235 exposed through the contact hole.

Referring to FIG. 1G, the second substrate 200 including the thin film transistor Tr is aligned on the first substrate 100 including the second electrode 130. In this case, the second electrode 130 protruding by the protrusion member 135 and the contact electrode 145 are in contact with each other. As a result, the organic light emitting diode device E and the thin film transistor Tr formed on the first and second substrates 100 and 200 spaced apart from each other are electrically connected to each other. As a result, the organic light emitting diode device E generates light by driving the thin film transistor Tr to provide an image to a user.

Thereafter, a sintering process is performed on the second sealing member 310 to bond the first and second substrates 100 and 200 to each other. The sintering process may be a process of irradiating a laser on the second sealing member 310. Here, the frit powders are in close contact with each other by the heat provided by the laser to remove voids between the frit powders. Therefore, the second sealing member 310 manufactured from the frit powder may have a lower moisture permeability and a lower air permeability than the UV curable resin.

Therefore, in the embodiment of the present invention, as the first and second substrates are bonded from the frit powder having low moisture permeability and low air permeability, the organic light emitting diode element can be prevented and delayed from being deteriorated from external moisture and oxygen. The reliability and lifespan of the organic light emitting diode display can be improved.

In addition, the sealing member including the frit powder is formed after forming the auxiliary electrode, the first electrode, and the buffer pattern, so that the sealing member is damaged and deformed during the process of forming the auxiliary electrode, the first electrode, and the buffer pattern. Can be prevented.

In addition, as the first substrate is aged before the preliminary sintering process of the sealing member, deformation of the first substrate may be minimized by the presintering process.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that.

1A to 1G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a first embodiment of the present invention.

 (Explanation of reference numerals for the main parts of the drawings)

100: first substrate 105: subsidiary electrode

110: first electrode 120: organic light emitting pattern

130: second electrode 300: first sealing member

300a: frit powder 300b: binder resin

310: second sealing member

Claims (5)

Providing a first substrate on which pixels are defined; Forming a first electrode on the first substrate; Forming a buffer pattern on the first electrode along the periphery of the pixel; Forming a sealing member including low melting glass along an edge of the first substrate; Presintering the sealing member; Forming a projection member and a separator on the buffer pattern; Forming an organic light emitting pattern on the first electrode; Forming a second electrode on the organic light emitting pattern; Aligning a second substrate on which a thin film transistor is formed on the substrate including the second electrode; And And bonding the first substrate and the second substrate to each other by electrically connecting the second electrode and the thin film transistor using the sealing member. The method of claim 1, And aging the first substrate prior to forming the first electrode. The method of claim 2, The aging of the first substrate may include performing heat treatment on the first substrate. The method of claim 2, The aging of the first substrate may include exposing the substrate to an environment having a temperature of 350 to 500 ° C. of the first substrate. The method of claim 1, And forming a trench in which the sealing member is filled along an edge of the first substrate before the forming of the first electrode.

Images