KR20090027191A - Resist stripping agent - Google Patents
Resist stripping agent Download PDFInfo
- Publication number
- KR20090027191A KR20090027191A KR1020087028027A KR20087028027A KR20090027191A KR 20090027191 A KR20090027191 A KR 20090027191A KR 1020087028027 A KR1020087028027 A KR 1020087028027A KR 20087028027 A KR20087028027 A KR 20087028027A KR 20090027191 A KR20090027191 A KR 20090027191A
- Authority
- KR
- South Korea
- Prior art keywords
- resist
- agent
- anticorrosive
- acid
- peeling
- Prior art date
Links
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 146
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 12
- 239000003963 antioxidant agent Substances 0.000 claims description 11
- 230000003078 antioxidant effect Effects 0.000 claims description 9
- 239000002738 chelating agent Substances 0.000 claims description 7
- 239000000872 buffer Substances 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 abstract description 38
- 230000007797 corrosion Effects 0.000 abstract description 37
- 239000004020 conductor Substances 0.000 abstract description 6
- -1 amine compound Chemical class 0.000 description 47
- 239000000758 substrate Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 25
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- 229910019142 PO4 Inorganic materials 0.000 description 3
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- 125000000623 heterocyclic group Chemical group 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
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- 238000000206 photolithography Methods 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
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- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- Inorganic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
본 발명은, 레지스트 박리제에 관한 것이다. 특히, 본 발명의 레지스트 박리제는, 박리성이 우수하고, 그리고, 인화성이 없어 안전하며, 또한, 도전체를 부식시키지 않는 방식성(防蝕性)이 우수하다.The present invention relates to a resist release agent. In particular, the resist releasing agent of the present invention is excellent in peelability, is safe from flammability, and is excellent in anticorrosive property that does not corrode a conductor.
IC, LSI와 같은 집적 회로, LCD, EL 소자와 같은 표시 기기, 프린트 기판 등은, 포토리소그래피(photolithography) 기술을 이용하여 제조되고 있다. 이 포토리소그래피 공정에 있어서, 불필요해진 레지스트(감광제)는, 레지스트 박리제를 이용하여 제거된다.Integrated circuits such as ICs and LSIs, display devices such as LCDs and EL elements, printed boards and the like are manufactured using photolithography techniques. In this photolithography step, the unnecessary resist (photosensitive agent) is removed using a resist releasing agent.
(종래예)(Conventional example)
이 레지스트 박리 공정에서는, 지금까지 여러 가지의 레지스트 박리제가 사용되어 왔다. 그러나, 최근, 액정 표시 패널이나 반도체 소자의 프로세스의 미세화나 단시간 처리에 대응하기에는 능력이 모자라서, 더 나은 성능이 요망되고 있다. 현재는, 박리성이 우수한 아민계 화합물을 포함하는 레지스트 박리제가 주력이 되고 있다.In this resist stripping process, various resist stripping agents have been used so far. However, in recent years, the ability to cope with the miniaturization of the process of a liquid crystal display panel or a semiconductor element or a short time process is insufficient, and better performance is desired. At present, the focus of the resist releasing agent containing the amine compound excellent in peelability is focused.
이 아민계 박리제는 용제계(溶劑系)와 수계(水系)로 분류할 수 있다. 예를 들면, 용제계 박리제로서, 디메틸술폭시드(약 30 중량%)+모노에탄올아민(약 70 중 량%)이나, 모노에탄올아민+N-메틸피롤리돈 등이 사용되고 있다. 한편, 수계 박리제로서, 물(약 20∼30 중량%)+디에틸렌글리콜모노부틸에테르(약 20∼30 중량%)+모노에탄올아민(약 30∼40 중량%), 알킬벤젠술폰산+기능수(오존수), 산계(酸系)(황산+과산화수소)+기능수(오존수) 등이 사용되고 있다.This amine releasing agent can be classified into a solvent system and an aqueous system. For example, dimethyl sulfoxide (about 30 weight%) + monoethanolamine (about 70 weight%), monoethanolamine + N-methylpyrrolidone, etc. are used as a solvent type release agent. On the other hand, as an aqueous peeling agent, water (about 20-30 weight%) + diethylene glycol monobutyl ether (about 20-30 weight%) + monoethanolamine (about 30-40 weight%), alkylbenzene sulfonic acid + functional water ( Ozone water), acid systems (sulfuric acid + hydrogen peroxide) + functional water (ozone water) and the like are used.
최근, 물 린스(rinse)가 가능한 수계 박리제의 사용이 확대되고 있다. 이 이유는, 수계 박리제가 박리성이 우수하고, 게다가 인화성이 없어 위험물이 아니기 때문이다. 그런데, 수계 박리제는, 모노에탄올아민이 첨가되어 있다. 이 때문에, 수계 박리제는, 배선 등의 도전체로의 부식이 일어난다는 결점을 갖고 있다. 따라서, 실제로는 박리 성능과 부식성을 고려하여, 모노에탄올아민의 함유량을 조정할 필요가 있다. 그리고, 레지스트 박리 성능과 도전체로의 대미지(damage; 부식) 방지를 목적으로서, 여러 가지 레지스트 박리제가 개발되어 왔다.In recent years, the use of the water release agent which can rinse water is expanded. This reason is because an aqueous peeling agent is excellent in peelability, and also it is not flammable and is not a dangerous substance. By the way, the monoethanolamine is added to the aqueous peeling agent. For this reason, the aqueous release agent has the drawback that corrosion to conductors, such as wiring, will occur. Therefore, in reality, it is necessary to adjust the content of monoethanolamine in consideration of peeling performance and corrosiveness. In addition, various resist stripping agents have been developed for the purpose of resist stripping performance and prevention of damage to a conductor.
예를 들면, 특허 문헌 1에는, 알칸올아민과 포름알데히드를 반응시킨 생성물을 함유하는 포토레지스트 박리제가 개시되어 있다. 이 생성물은, 알칸올아민과 포름알데히드를, 포름알데히드/알칸올아민(몰비)로, 0.8 이하의 비율로 반응시킴으로써 생성된다.For example,
또한, 특허 문헌 2에는, 알칸올아민 화합물과, 술폰 화합물 또는 술폭시드 화합물과, 히드록시 화합물로 이루어지는, 포토레지스트 박리제 조성물이 개시되어 있다.In addition,
또한, 특허 문헌 3에는, 적어도 히드록시카르복실산 및 물을 포함하는, pH가 안정된 레지스트 박리제가 개시되어 있다. 이 레지스트 박리제는, 제조 후에 포함 되는 히드록시카르복실산이, 2분자 이상의 축합체와 히드록시카르복실산 단량체와의 비율(즉, 축합체/단량체)이 1/9 이하가 되도록 조정되어 있다.In addition,
또한, 특허 문헌 4에는, 구리와 은의 합금을 배선 프로세스에 사용하기 위한 레지스트를 박리하는 박리제가 개시되어 있다. 이 레지스트 박리제는, 피페라진류를 포함하고 있다.In addition,
또한, 특허 문헌 5에는, 테트라에틸렌펜타민 및 에테르알코올을 포함하는 레지스트 박리제가 개시되어 있다.In addition,
특허 문헌 1: 일본공개특허공보 2004-219486호Patent Document 1: Japanese Patent Application Laid-Open No. 2004-219486
특허 문헌 2: 일본공개특허공보 평05-281753호Patent Document 2: Japanese Patent Application Laid-Open No. 05-281753
특허 문헌 3: 일본공개특허공보 2005-049438호Patent Document 3: Japanese Patent Application Laid-Open No. 2005-049438
특허 문헌 4: 일본공개특허공보 2004-205674호Patent Document 4: Japanese Patent Application Laid-Open No. 2004-205674
특허 문헌 5: 일본공개특허공보 2004-205675호Patent Document 5: Japanese Patent Application Laid-Open No. 2004-205675
(발명의 개시)(Initiation of invention)
(발명이 해결하고자 하는 과제)(Tasks to be solved by the invention)
상기 각 특허 문헌에 기재된 기술은, 레지스트 박리 성능의 향상과 도전체(구리(Cu)나 알루미늄(Al) 등으로 이루어지는 배선 등)의 방식(防蝕; anti-corrosive)을 목적으로서 개발되었다. 그러나, 이들의 기술에서는, 아직 완전하게 양 목적을 만족할 수 없다는 문제가 있었다.The technique described in each of the above patent documents has been developed for the purpose of improving resist peeling performance and an anti-corrosive method of a conductor (such as a wiring made of copper (Cu), aluminum (Al), etc.). However, these techniques have a problem that they cannot fully satisfy both purposes.
본 발명은, 상기 과제를 감안하여 이루어진 것으로, 박리성이 우수하고, 그리고, 인화성이 없어 안전하며, 또한, 도전체를 부식시키지 않는 방식성이 우수한 레지스트 박리제의 제공을 목적으로 한다.This invention is made | formed in view of the said subject, Comprising: It aims at providing the resist peeling agent which is excellent in peelability, is not flammable, is safe, and is excellent in anticorrosive property which does not corrode a conductor.
또한, 본 발명자들은, 상기의 상황을 감안하여, 예의 검토했다. 이 결과, 높은 양친매성(兩親媒性)을 갖는 특정한 신규의 알콕시아미드계 화합물을, 레지스트 박리제로서 사용했다. 이 레지스트 박리제는, 방식성이 우수하고, 게다가 박리 성능도 우수했다. 본 발명은, 이와 같이 하여 완성한 것이다.In addition, the present inventors earnestly examined in view of the said situation. As a result, a specific novel alkoxyamide compound having high amphipathic properties was used as a resist stripping agent. This resist releasing agent was excellent in anticorrosiveness, and also excellent in peeling performance. This invention is completed in this way.
(과제를 해결하기 위한 수단)(Means to solve the task)
상기 목적을 달성하기 위해, 본 발명의 레지스트 박리제는, 하기 화학식 1로 나타나는 화합물을 포함하고 있다.In order to achieve the said objective, the resist stripper of this invention contains the compound represented by following formula (1).
[화학식 1][Formula 1]
여기서, 화학식 1에 있어서, R3은 탄소수 1∼18의 알킬기이다. R1 및 R2는, 각각 독립으로 수소 원자 또는 탄소수 1∼6의 에테르 결합을 가져도 좋은 탄화수소기이다. R1과 R2는, 서로 동일해도 달라도 좋고, 또한, 서로 결합하여 고리 구조를 형성해도 좋다.Here, in General formula (1), R <3> is a C1-C18 alkyl group. R 1 and R 2 are each independently a hydrocarbon group which may have a hydrogen atom or an ether bond having 1 to 6 carbon atoms. R 1 and R 2 may be the same as or different from each other, and may also be bonded to each other to form a ring structure.
이와 같이, 알콕시아미드계의 레지스트 박리제는, 높은 박리 성능을 가짐과 아울러, 구리나 알루미늄에 대하여 방식성이 매우 우수하다. 또한, 이 레지스트 박리제는, 수용성(水溶性)을 갖고 있기 때문에, IPA(이소프로필알코올) 린스가 불필요하여, 생산성을 향상시킬 수 있다.As described above, the alkoxyamide-based resist stripping agent has high peeling performance and is excellent in corrosion resistance to copper and aluminum. Moreover, since this resist releasing agent has water solubility, IPA (isopropyl alcohol) rinse is unnecessary, and productivity can be improved.
또한, 바람직하게는, 약 20∼100 중량%의 상기 화학식 1로 나타나는 화합물과, 약 0∼80 중량%의 물이 포함되면 좋다.Further, preferably, about 20 to 100% by weight of the compound represented by Formula 1 and about 0 to 80% by weight of water may be included.
이와 같이, 레지스트 박리제는, 물 혼합계의 레지스트 박리제로서도 사용할 수 있다. 또한, 레지스트 박리제는, 물 혼합물로 함으로써 인화성을 없애, 비(非)위험물로서 취급할 수 있다. 또한, 레지스트 박리제는, 높은 물 희석률이라도 높은 박리 성능을 갖고 있어, 레지스트 박리제의 사용량을 저감할 수 있다. 또한, 레지스트 박리제는, 물 혼합물로 하지 않는 경우라도, 알콕시아미드계 화합물 자체의 인화점이 높고, 제3 석유류인 점에서, 안정성을 향상시킬 수 있다.Thus, the resist stripping agent can also be used as a resist stripping agent of water mixing system. In addition, the resist releasing agent can be treated as a non-hazardous product by eliminating flammability by using a water mixture. Moreover, even if it is a high water dilution rate, the resist peeling agent has high peeling performance, and the usage-amount of a resist peeling agent can be reduced. In addition, even if it is not made into a water mixture, a resist releasing agent has a high flash point of the alkoxy amide type compound itself, and can improve stability because it is a third petroleum.
또한, 바람직하게는, 상기 R1 및 R2 의 탄소수를, 1∼4로 하면 좋다.Moreover, Preferably, the carbon number of said R <1> and R <2> may be 1-4.
이와 같이 하면, 레지스트 박리제는, 물에 대한 용해성이 저하되는 것을 억제할 수 있어, 물 린스가 가능해진다.In this way, the resist releasing agent can suppress that the solubility to water falls, and water rinsing becomes possible.
또한, 바람직하게는, 상기 R1 및 R2 의 탄소수를 1로 하고, 그리고, 상기 R3의 탄소수를 1∼8로 하면 좋다.Preferably, the carbon number of the R 1 and R 2 is 1, and the carbon number of the R 3 is 1-8.
이와 같이 하면, 레지스트 박리제는, 레지스트의 박리성을 저하시키지 않고, 물에 대한 용해성이 저하되는 것을 억제할 수 있다.By doing in this way, a resist releasing agent can suppress that the solubility to water falls, without reducing the peelability of a resist.
또한, 바람직하게는, 상기 R1 및 R2의 탄소수를 2로 하고, 그리고, 상기 R3의 탄소수를 1∼6으로 하면 좋다.Moreover, Preferably, it is good for carbon number of said R <1> and R <2> to be 2, and the carbon number of said R <3> to 1-6.
이와 같이 해도, 레지스트 박리제는, 레지스트의 박리성을 저하시키지 않고, 물에 대한 용해성이 저하되는 것을 억제할 수 있다.Even if it does in this way, a resist peeling agent can suppress that the solubility to water falls, without reducing the peelability of a resist.
또한, 바람직하게는, 방식제, 킬레이트제, 박리 촉진제, 환원제, 산화제, 계면 활성제, 완충제 및/또는 산화 방지제가 첨가되면 좋다.In addition, preferably, an anticorrosive agent, a chelating agent, a peeling accelerator, a reducing agent, an oxidizing agent, a surfactant, a buffer, and / or an antioxidant may be added.
이와 같이, 예를 들면, 계면 활성제를 첨가하면, 미세 틈(gap)으로의 침투성이 향상되어, 레지스트의 박리성을 향상시킬 수 있다. 또한, 산화 방지제를 첨가함으로써, 레지스트 박리제는, 산화에 의한 성능 열화를 억제할 수 있다.Thus, for example, when surfactant is added, permeability to a fine gap improves and the peelability of a resist can be improved. In addition, by adding the antioxidant, the resist releasing agent can suppress performance deterioration due to oxidation.
도1 은 실시예 1∼15에 대한 박리제종(박리액의 조성), 박리 성능 및, 방식 성능을 나타낸 표1 을 나타내고 있다.BRIEF DESCRIPTION OF THE DRAWINGS Table 1 which shows the peeling agent type (composition of the peeling liquid), peeling performance, and anticorrosive performance about Examples 1-15 is shown.
도2 는, 비교예 1∼6에 대한 박리제종(박리액의 조성), 박리 성능 및, 방식 성능을 나타낸 표2 를 나타내고 있다.FIG. 2 has shown Table 2 which shows the peeling agent type (composition of the peeling liquid), peeling performance, and anticorrosive performance with respect to Comparative Examples 1-6.
(발명을 실시하기 위한 최량의 형태)(The best form to carry out invention)
[레지스트 박리제의 일 실시 형태][One Embodiment of Resist Release Agent]
본 발명의 레지스트 박리제는, 액정 표시 패널이나 반도체 소자 등의 제조시에 이용된다. 즉, 포토리소그래피 공정에 있어서, 불필요해진 레지스트(감광제)를, 용해하여 제거한다.The resist releasing agent of this invention is used at the time of manufacture of a liquid crystal display panel, a semiconductor element, etc. That is, in the photolithography step, the unnecessary resist (photosensitive agent) is dissolved and removed.
본 실시 형태의 레지스트 박리제는, 하기 화학식 1로 나타나는 알콕시아미드계의 화합물을 포함하는 구성으로 하고 있다.The resist releasing agent of this embodiment is made to contain the alkoxy amide type compound represented by following formula (1).
[화학식 1][Formula 1]
상기 화학식 1에 있어서, R3은 탄소수 1∼18의 알킬기이다. R1 및 R2는, 각각 수소 원자, 또는, 탄소수 1∼6의 에테르 결합을 가져도 좋은 1가(價)의 탄화수소기이다.In
여기서, R3의 알킬기로서는, 메틸기, 에틸기, 각종 프로필기, 각종 부틸기, 각종 펜틸기, 각종 헥실기, 각종 옥틸기 등을 들 수 있다. 이 알킬기는, 탄소수 1∼8인 것이 바람직하고, 탄소수 1∼6인 것이 특히 바람직하다.Here, as an alkyl group of R <3> , a methyl group, an ethyl group, various propyl groups, various butyl groups, various pentyl groups, various hexyl groups, various octyl groups, etc. are mentioned. It is preferable that this alkyl group is C1-C8, and it is especially preferable that it is C1-C6.
또한, R1 및 R2의 탄화수소기로서는, 직쇄 형상, 분기 형상의 어느 것이라도 좋지만, 포화 탄화수소기가 바람직하다. 그 예로서는, 메틸기, 에틸기, 각종 프로필기, 각종 부틸기, 메톡시메틸기, 메톡시에틸기, 에톡시에틸기 등을 들 수 있고, 메틸기가 가장 일반적이다. R1 및 R2는, 서로 동일해도 달라도 좋고, 또한, 서로 결합하여 고리 구조를 형성해도 좋다. 이 고리 구조는, 질소를 헤테로 원자로 하는 복소환 구조라도 좋고, 또한, 질소 원자와 산소 원자를 헤테로 원자로 하는 복소환 구조라도 좋다. 이 복소환 구조를 갖는 기(基)로서는, 예를 들면, 1-피롤리디닐기, 피페리디노기, 몰포리노기 등을 들 수 있다.In addition, as a hydrocarbon group of R <1> and R <2> , either linear or branched form may be sufficient, but a saturated hydrocarbon group is preferable. As the example, a methyl group, an ethyl group, various propyl groups, various butyl groups, methoxymethyl group, methoxyethyl group, ethoxyethyl group, etc. are mentioned, A methyl group is the most common. R 1 and R 2 may be the same as or different from each other and may be bonded to each other to form a ring structure. The ring structure may be a heterocyclic structure having nitrogen as a hetero atom, or may be a heterocyclic structure having a nitrogen atom and an oxygen atom as a hetero atom. As group which has this heterocyclic structure, a 1-pyrrolidinyl group, a piperidino group, a morpholino group, etc. are mentioned, for example.
상기 알콕시아미드계의 화합물로서, 예를 들면, 3-메톡시-N,N-디메틸프로피온아미드, 3-부톡시-N,N-디메틸프로피온아미드, 3-메톡시-N,N-디에틸프로피온아미드, 3-에톡시-N,N-디에틸프로피온아미드 등을 들 수 있다.As the alkoxyamide-based compound, for example, 3-methoxy-N, N-dimethylpropionamide, 3-butoxy-N, N-dimethylpropionamide, 3-methoxy-N, N-diethylpropion Amide, 3-ethoxy-N, N-diethylpropionamide, and the like.
여기서, 바람직하게는, R1 및 R2의 탄소수를, 1∼4로 하면 좋고, 보다 바람직하게는, R1 및 R2의 탄소수를, 1∼2로 하면 좋다. 이와 같이 하면, 물에 대한 용해성이 저하되는 것을 억제할 수 있어, 물 린스가 가능해진다.Here, Preferably, the carbon number of R <1> and R <2> may be 1-4, More preferably, the carbon number of R <1> and R <2> may be 1-2. By doing in this way, it becomes possible to suppress that the solubility to water falls and it becomes possible to rinse water.
또한, 바람직하게는, R1 및 R2의 탄소수를 1로 했을 때, R3의 탄소수를 1∼8로 하면 좋고, 보다 바람직하게는, R3의 탄소수를 1∼6으로 하면 좋다. 이와 같이 하면, 레지스트의 박리성(레지스트를 용해하는 성능을 포함함)을 저하시키지 않고, 물에 대한 용해성을 증대시킬 수 있다. R1 및 R2의 탄소수를 1로 했을 때, R3의 탄소수를 1∼8로 하면 좋은 이유는, R3의 탄소수가 클수록 물에 대한 용해성이 저하되어, 물 희석률이 저하됨과 아울러, 물 린스가 곤란해지기 때문이다.Preferably, when the carbon number of R 1 and R 2 is 1, the carbon number of R 3 may be 1-8, and more preferably, the carbon number of R 3 may be 1-6. In this way, the solubility in water can be increased without lowering the peelability (including the ability to dissolve the resist) of the resist. When the carbon number of R 1 and R 2 is 1, the reason for setting the carbon number of R 3 to 1 to 8 is that as the carbon number of R 3 increases, solubility in water decreases, and the water dilution rate decreases, This is because rinsing becomes difficult.
또한, 바람직하게는, R1 및 R2의 탄소수를 2로 했을 때, R3의 탄소수를 1∼6으로 하면 좋고, 보다 바람직하게는, R3의 탄소수를 1∼3으로 하면 좋다. 이와 같이 하면, 레지스트의 박리성을 저하시키지 않고, 물에 대한 용해성을 증대시킬 수 있다. R1 및 R2의 탄소수를 2로 했을 때, R3의 탄소수를 1∼6으로 하면 좋은 이유는, R3의 탄소수가 클수록 물에 대한 용해성이 저하되어, 물 희석률이 저하됨과 아 울러, 물 린스가 곤란해지기 때문이다.Preferably, when the carbon number of R 1 and R 2 is 2, the carbon number of R 3 may be 1 to 6, and more preferably, the carbon number of R 3 may be 1 to 3. In this manner, the solubility in water can be increased without lowering the peelability of the resist. When the carbon number of R 1 and R 2 is 2, the reason for setting the carbon number of R 3 to 1 to 6 is that as the carbon number of R 3 increases, solubility in water decreases, and the water dilution rate decreases. This is because water rinse becomes difficult.
상기 화학식 1로 나타나는 알콕시아미드계의 화합물은, 통상, 물과 혼합되어 물 혼합계의 레지스트 박리제로서 사용된다. 이 레지스트 박리제는, 물 혼합물로 함으로써 인화성이 없기 때문에, 비(非)위험물로서 취급할 수 있다. 또한, 이 레지스트 박리제는, 높은 물 희석률이라도 높은 박리 성능을 갖고 있어, 레지스트 박리제의 사용량을 저감할 수 있다. 또한, 물 혼합물로 하지 않는 경우라도, 레지스트 박리제로서 사용할 수 있다. 또한, 알콕시아미드계 화합물 자체의 인화점이 높고, 제3 석유류인 점에서, 안전성을 향상시킬 수 있다.The alkoxyamide compound represented by the formula (1) is usually mixed with water and used as a resist stripping agent of a water mixture system. This resist releasing agent can be treated as a non-hazardous substance because it is not flammable by using a water mixture. Moreover, this resist releasing agent has high peeling performance even at a high water dilution rate, and the usage-amount of a resist releasing agent can be reduced. Moreover, even when it is not made into a water mixture, it can be used as a resist peeling agent. Moreover, since the flash point of the alkoxyamide type compound itself is high and it is 3rd petroleum, safety can be improved.
여기서, 바람직하게는, 레지스트 박리제에, 약 20∼100 중량%의 화학식 1로 나타나는 화합물과, 약 0∼80 중량%의 물이 포함되면 좋다. 보다 바람직하게는, 약 25∼100 중량%의 화학식 1로 나타나는 화합물과, 약 0∼75 중량%의 물이 포함되면 좋고, 더욱 바람직하게는, 약 40∼100 중량%의 화학식 1로 나타나는 화합물과, 0∼60 중량%의 물이 포함되면 좋다. 이와 같이 하면, 레지스트 박리제의 박리 성능을 양호하게 발휘할 수 있다.Here, preferably, the resist release agent contains about 20 to 100% by weight of the compound represented by the formula (1) and about 0 to 80% by weight of water. More preferably, about 25 to 100% by weight of the compound represented by the formula (1), about 0 to 75% by weight of water may be included, and more preferably, about 40 to 100% by weight of the compound represented by the formula (1) , 0 to 60% by weight of water may be included. By doing in this way, the peeling performance of a resist releasing agent can be exhibited favorably.
예를 들면, 화학식 1로 나타나는 화합물로서, N,N-디메틸체를 사용하는 경우, 물 첨가량은, 약 5∼80 중량%로 하면 좋고, 바람직하게는, 약 20∼60 중량%로 하면 좋다. 즉, 화학식 1로 나타나는 화합물이, 약 40 중량% 미만이거나, 혹은 약 80 중량%를 초과하면, 화학식 1로 나타나는 화합물에 따라서는, 레지스트에 대한 박리 성능이 저하될 우려가 있기 때문이다. 또한, 화학식 1로 나타나는 화합물로서, N,N-디에틸체를 사용하는 경우, 물 첨가량은, 약 0∼80 중량%로 하면 좋고, 바 람직하게는, 약 0∼40 중량%로 하면 좋다. 이와 같이 하면, 레지스트에 대한 박리 성능이 저하된다는 문제를 방지할 수 있다.For example, when the N, N-dimethyl body is used as the compound represented by the formula (1), the amount of water added may be about 5 to 80% by weight, preferably about 20 to 60% by weight. That is, when the compound represented by the formula (1) is less than about 40% by weight or exceeds about 80% by weight, the peeling performance of the resist may decrease depending on the compound represented by the formula (1). In addition, when using N, N-diethyl body as a compound represented by General formula (1), the addition amount of water may be about 0 to 80 weight%, Preferably it is about 0 to 40 weight%. By doing in this way, the problem that peeling performance with respect to a resist falls can be prevented.
또한, 본 실시 형태의 레지스트 박리제는, 바람직하게는, 방식제, 킬레이트제, 박리 촉진제, 환원제, 산화제, 계면 활성제, 완충제 및/또는 산화 방지제 등이 첨가되면 좋다. 이와 같이, 예를 들면, 계면 활성제를 첨가하면, 미세 틈으로의 침투성이 향상되어, 레지스트의 박리성을 향상시킬 수 있다. 또한, 필요에 따라, 산화 방지제를 첨가함으로써, 산화에 의한 성능 열화를 억제할 수 있다. 상기 방식제, 킬레이트제, 박리 촉진제, 환원제, 산화제, 계면 활성제, 산화 방지제는, 단독으로도 사용할 수 있고, 또한, 2종 이상을 조합해서도 사용할 수 있다.In addition, the resist release agent of this embodiment, Preferably, an anticorrosive agent, a chelating agent, a peeling accelerator, a reducing agent, an oxidizing agent, surfactant, a buffer, and / or antioxidant may be added. Thus, for example, when surfactant is added, permeability to a microgap improves and the peelability of a resist can be improved. In addition, if necessary, by adding an antioxidant, performance degradation due to oxidation can be suppressed. The said anticorrosive, a chelating agent, a peeling promoter, a reducing agent, an oxidizing agent, surfactant, and antioxidant can be used individually, and can also be used in combination of 2 or more type.
방식제, 혹은, 킬레이트제로서, 방향족 히드록시 화합물, 아세틸렌알코올, 카르복실기 함유 유기 화합물 및 그 무수물, 트리아졸 화합물, 당류 및 옥심계 화합물 등을 들 수 있다. 상기 각 방식제, 혹은, 킬레이트제는, 단독으로도 사용할 수 있고, 또한, 2종 이상을 조합해서도 사용할 수 있다.As an anticorrosive agent or a chelating agent, an aromatic hydroxy compound, acetylene alcohol, a carboxyl group-containing organic compound, its anhydride, a triazole compound, a saccharide, an oxime type compound, etc. are mentioned. Each said anticorrosive or chelating agent can be used individually, and can also be used in combination of 2 or more type.
방향족 히드록시 화합물로서, 페놀, 크레졸, 크실레놀, 피로카테콜, 레조르시놀, 히드로퀴논, 피로갈롤, 1,2,4-벤젠트리올, 살리실알코올, p-히드록시벤질알코올, o-히드록시벤질알코올, p-히드록시페네틸알코올, p-아미노페놀, m-아미노페놀, 디아미노페놀, 아미노레조르시놀, p-히드록시안식향산, o-히드록시안식향산, 2,4-디히드록시안식향산, 2,5-디히드록시안식향산, 3,4-디히드록시안식향산, 3,5-디히드록시안식향산, 몰식자산(gallic acid) 등을 들 수 있다.As aromatic hydroxy compounds, phenol, cresol, xylenol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, 1,2,4-benzenetriol, salicyl alcohol, p-hydroxybenzyl alcohol, o- Hydroxybenzyl alcohol, p-hydroxyphenethyl alcohol, p-aminophenol, m-aminophenol, diaminophenol, aminoresorcinol, p-hydroxybenzoic acid, o-hydroxybenzoic acid, 2,4-dihydrate Roxian acid, 2,5-dihydroxy benzoic acid, 3,4-dihydroxy benzoic acid, 3,5-dihydroxy benzoic acid, gallic acid, and the like.
아세틸렌알코올로서, 2-부틴-1,4-디올, 3,5-디메틸-1-헥신-3-올, 2-메틸-3- 부틴-2-올, 3-메틸-1-펜틴-3-올, 3,6-디메틸-4-옥틴-3,6-디올, 2,4,7,9-테트라메틸-5-데신-4,7-올, 2,5-디메틸-3-헥신-2,5-디올 등을 들 수 있다.As acetylene alcohol, 2-butyne-1,4-diol, 3,5-dimethyl-1-hexyn-3-ol, 2-methyl-3- butyn-2-ol, 3-methyl-1-pentin-3- Ol, 3,6-dimethyl-4-octin-3,6-diol, 2,4,7,9-tetramethyl-5-decine-4,7-ol, 2,5-dimethyl-3-hexyn-2 And 5-diol.
카르복실기 함유 유기 화합물 및 그 무수물로서, 포름산, 아세트산, 프로피온산, 부티르산, 이소부티르산, 옥살산, 말론산, 숙신산, 글루타르산, 말레인산, 푸마르산, 안식향산, 프탈산, 1,2,3-벤젠트리카르복실산, 글리콜산, 유산, 말산, 시트르산, 무수아세트산, 무수프탈산, 무수말레인산, 무수숙신산, 살리실산, 타르타르산, 아크릴산, γ-리놀렌산 등을 들 수 있다.As the carboxyl group-containing organic compound and its anhydride, formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumaric acid, benzoic acid, phthalic acid, 1,2,3-benzenetricarboxylic acid , Glycolic acid, lactic acid, malic acid, citric acid, acetic anhydride, phthalic anhydride, maleic anhydride, succinic anhydride, salicylic acid, tartaric acid, acrylic acid, γ-linolenic acid, and the like.
트리아졸 화합물로서는, 벤조트리아졸, o-트릴트리아졸, m-트릴트리아졸, p-트릴트리아졸, 카르복시벤조트리아졸, 1-히드록시벤조트리아졸, 니트로벤조트리아졸, 디히드록시프로필벤조트리아졸, 아미노트리아졸 등을 들 수 있다.Examples of the triazole compound include benzotriazole, o-tritriazole, m-tritriazole, p-tritriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzo. Triazole, aminotriazole, and the like.
또한, 당류로서, 소르비톨, 크실리톨, 파라티니트(palatinit), 아라비톨, 만니톨, 수크로오스, 전분(澱粉) 등을 들 수 있다.Examples of the saccharide include sorbitol, xylitol, paratinit, arabitol, mannitol, sucrose, starch and the like.
또한, 옥심계 화합물로서는, 디메틸글리옥심, 디페닐글리옥심 등을 들 수 있따.Moreover, dimethylglyoxime, diphenylglyoxime, etc. are mentioned as an oxime type compound.
상기 방식제, 혹은 킬레이트제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다.The said anticorrosive or chelating agent may be used individually or in mixtures thereof.
박리 촉진제로서, 벤젠술폰산, 톨루엔술폰산, 크실렌술폰산, 페놀술폰산, 혹은 메틸, 프로필, 헵틸, 옥틸, 데실, 도데실 등의 알킬벤젠술폰산 등을 들 수 있다.Examples of the release accelerator include benzene sulfonic acid, toluene sulfonic acid, xylene sulfonic acid, phenol sulfonic acid, or alkyl benzene sulfonic acids such as methyl, propyl, heptyl, octyl, decyl, and dodecyl.
상기 박리 촉진제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋 다.The peeling accelerator may be used either alone or in a mixture thereof.
환원제로서는, 차아황산, 황산염계 환원제, 아민계 환원제, 혹은, 그 외의 환원제를 들 수 있다.Examples of the reducing agent include sulfurous acid, sulfate-based reducing agents, amine-based reducing agents, or other reducing agents.
상기 차아황산, 황산염계 환원제로서, 티오황산나트륨, 아디티온산나트륨, 피로아황산나트륨, 메타중아황산나트륨 등을 들 수 있다.Examples of the hyposulfite and sulfate-based reducing agents include sodium thiosulfate, sodium adithionate, sodium pyrosulfite, sodium metabisulfite, and the like.
아민계 환원제로서, 히드록실아민, 모노에탄올아민, 트립토판, 히스티딘, 메티오닌, 페닐알라닌 등을 들 수 있다.Examples of the amine-based reducing agent include hydroxylamine, monoethanolamine, tryptophan, histidine, methionine, and phenylalanine.
그 외의 환원제로서, 아스코르빈산, 부틴디올류, 불포화케톤류, 요산, 테트라아미솔, 히드라진류 및, 그 유도체류로서, 카르바제이트류, 옥심류, 히드로퀴논, 피로갈롤, 몰식자산, 2,4,5-트리히드록시부틸로페논, 토코페롤, 6-히드록시-2,5,7,8-데트라메틸크로만-2-카르복실산, 부틸화히드록시톨루엔(BHT), 부틸화히드록시아니솔(BHA), 2,6-디-제3부틸-4-히드록시메틸페놀, 티올류, 살리실알데히드, 4-히드록시벤즈알데히드 및 글리콜알데히드디알킬아세탈류 및 그들의 혼합물 등을 들 수 있다.As other reducing agents, ascorbic acid, butynediols, unsaturated ketones, uric acid, tetraamisol, hydrazines, and derivatives thereof, carbazates, oximes, hydroquinones, pyrogallols, moles, 2,4, 5-trihydroxybutyllophenone, tocopherol, 6-hydroxy-2,5,7,8-detramethylchroman-2-carboxylic acid, butylated hydroxytoluene (BHT), no butylated hydroxy Sol (BHA), 2,6-di- tert-butyl-4-hydroxymethylphenol, thiols, salicylaldehyde, 4-hydroxybenzaldehyde and glycol aldehyde dialkyl acetals and mixtures thereof.
상기 환원제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다.The reducing agent may be used either alone or in a mixture thereof.
산화제로서, 오존, 과산화수소, 차아염소산 또는 차아염소산염, 아염소산 또는 아염소산염, 과염소산 또는 과염소산염, 차아브롬산 또는 차아브롬산염, 아브롬산 또는 아브롬산염, 과브롬산 또는 과브롬산염, 차아요오드산 또는 차아요오드산염, 아요오드산 또는 아요오드산염, 과요오드산 또는 과요오드산염, 과황산 또는 과황산염, 과아세트산 또는 과아세트산염, 과프로피온산 또는 과프로피온산염, 과 안식향산 또는 과안식향산염, tert-부틸하이드로퍼옥시드, 에틸벤젠하이드로퍼옥시드, 큐멘하이드로퍼옥시드 등을 들 수 있다.As the oxidizing agent, ozone, hydrogen peroxide, hypochlorous acid or hypochlorite, chlorite or chlorite, perchloric acid or perchlorate, hypobromic acid or hypobromite, abromic acid or abromate, perbromic acid or perbromite, hypoiodic acid or hypoamic acid Iodide, iodide or iodide, periodic or periodate, persulfate or persulfate, peracetic acid or peracetic acid, perpropionic acid or perpropionate, perbenzoic acid or perbenzoate, tert-butyl hydride Loperoxide, ethylbenzene hydroperoxide, cumene hydroperoxide, etc. are mentioned.
상기 산화제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다.The oxidizing agent may be used either alone or in a mixture thereof.
계면 활성제로서, 양이온(cation)계, 음이온(anion)계, 비(非)이온계, 혹은 불소계 등의 계면 활성제를 들 수 있다.As surfactant, surfactant, such as a cation type, anion type, nonionic type, or fluorine type, is mentioned.
양이온계 계면 활성제로서, 알킬트리메틸암모늄염계, 알킬아미드아민계, 알킬디메틸벤질암모늄염계, 폴리에틸렌폴리아민계 양이온 수지, 세틸트리메틸암모늄클로라이드, 제4급 암모늄염 등의 계면 활성제를 들 수 있다.Examples of the cationic surfactant include surfactants such as alkyltrimethylammonium salts, alkylamideamines, alkyldimethylbenzylammonium salts, polyethylenepolyamine-based cationic resins, cetyltrimethylammonium chlorides and quaternary ammonium salts.
노니온계 계면 활성제로서, 폴리옥시알킬렌알킬에테르계, 폴리옥시알킬렌알킬페닐에테르계, 폴리옥시알킬렌글리콜지방산에스테르계, 폴리옥시알킬렌소르비트지방산에스테르계, 소르비탄지방산에스테르계, 폴리옥시알킬렌소르비탄지방산에스테르계 등의 계면 활성제를 들 수 있다.Nonionic surfactants include polyoxyalkylene alkyl ethers, polyoxyalkylene alkylphenyl ethers, polyoxyalkylene glycol fatty acid esters, polyoxyalkylene sorbitan fatty acid esters, sorbitan fatty acid esters, and polyoxy. Surfactants, such as an alkylene sorbitan fatty acid ester type, are mentioned.
음이온계 계면 활성제로서, 물 중에서 음이온성을 나타내는 기로서, 술폰산을 형성하는 기(이하, 술폰산기로 표기함), 황산에스테르를 형성하는 기(이하, 황산에스테르기로 표기함), 인산에스테르를 형성하는 기(이하, 인산에스테르기로 표기함), 카르복실산을 형성하는 기(이하, 카르복실산기로 표기함) 등을 들 수 있다.As an anionic surfactant, as a group which shows anionicity in water, the group which forms a sulfonic acid (henceforth a sulfonic acid group), the group which forms a sulfate ester (henceforth a sulfate ester group), and a phosphate ester is formed. And groups (hereinafter, referred to as phosphate ester groups) and groups (hereinafter, referred to as carboxylic acid groups) to form carboxylic acids.
상기 술폰산기를 갖는 화합물로서, 알킬디페닐에테르디술폰산, 알킬렌디술폰산, 나프탈렌술폰산포르말린축합물, 페놀술폰산포르말린축합물, 페닐페놀술폰산포르말린축합물 등의 분자 구조 중에 음이온계 관능기를 2개 이상 갖는 화합물, 알킬벤젠술폰산, 디알킬석시네이트술폰산, 모노알킬석시네이트술폰산, 알킬페녹시에톡 시에틸술폰산 등의 화합물 또는 그 염 등을 들 수 있다.As the compound having a sulfonic acid group, a compound having two or more anionic functional groups in molecular structures such as alkyldiphenyl ether disulfonic acid, alkylene disulfonic acid, naphthalene sulfonic acid formalin condensate, phenol sulfonic acid formalin condensate, and phenylphenol sulfonic acid formalin condensate And compounds such as alkylbenzene sulfonic acid, dialkyl succinate sulfonic acid, monoalkyl succinate sulfonic acid and alkyl phenoxy ethoxy ethyl sulfonic acid or salts thereof.
황산에스테르기를 갖는 화합물로서, 알킬메틸타우린, 아실메틸타우린, 지방산메틸타우린 등의 메틸타우린류, 폴리옥시알킬렌알킬페닐에테르황산에스테르, 폴리옥시알킬렌알킬에테르황산에스테르, 폴리옥시알킬렌다환페닐에테르황산에스테르, 폴리옥시알킬렌아릴에테르황산에스테르 등의 화합물 또는 그 염 등을 들 수 있다.As the compound having a sulfate ester group, methyl taurine such as alkyl methyl taurine, acyl methyl taurine, fatty acid methyl taurine, polyoxyalkylene alkylphenyl ether sulfate ester, polyoxyalkylene alkyl ether sulfate ester, polyoxyalkylene polycyclic phenyl ether Compounds, such as a sulfate ester and polyoxyalkylene aryl ether sulfate ester, or its salt, etc. are mentioned.
인산에스테르기를 갖는 화합물로서, 폴리옥시알킬렌알킬에테르인산, 폴리옥시알킬렌알킬페닐에테르인산 등의 화합물 또는 그 염 등을 들 수 있다.As a compound which has a phosphate ester group, compounds, such as polyoxyalkylene alkyl ether phosphoric acid and polyoxyalkylene alkylphenyl ether phosphoric acid, or its salt, etc. are mentioned.
카르복실산기를 갖는 화합물로서, 아실사르코신, 지방산사르코신 등의 사르코신류 화합물, 야자유, 올레인유, 아크릴산, γ-리놀렌산 등의 지방산류 화합물 또는 그 염 등을 들 수 있다.Examples of the compound having a carboxylic acid group include sarcosine compounds such as acyl sarcosine and fatty acid sarcosine, fatty acid compounds such as palm oil, olein oil, acrylic acid and γ-linolenic acid, and salts thereof.
또한, 분자 구조 중에 다른 2개의 음이온계 관능기를 갖는 화합물로서, 술폰산기 및 카르복실산기를 갖는 화합물인 알킬술포숙신산, 폴리옥시알킬렌알킬술포숙신산 등의 화합물 또는 그 염 등을 들 수 있다.Moreover, as a compound which has two other anionic functional groups in a molecular structure, compounds, such as alkyl sulfosuccinic acid and polyoxyalkylene alkyl sulfosuccinic acid which are compounds which have a sulfonic acid group and a carboxylic acid group, or its salt, etc. are mentioned.
불소계 계면 활성제로서, 퍼플루오로알킬에틸렌옥시드부가물, 퍼플루오로알킬인산에스테르, 퍼플루오로알킬페닐글리신 등을 들 수 있다.Examples of the fluorine-based surfactants include perfluoroalkyl ethylene oxide adducts, perfluoroalkyl phosphate esters, and perfluoroalkylphenylglycines.
상기 계면 활성제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다.The surfactant may be used either alone or in a mixture thereof.
완충제로서는, 무기산염계나 유기산염계 등을 들 수 있다.Examples of the buffer include inorganic acid salts and organic acid salts.
예를 들면, 완충계에서 유용한 유기산으로서, 한정하지 않지만, 포름산, 트리플루오로아세트산, 프로피온산, 부티르산, 발레르산, 헵탄산, 유산, 옥살산, 말 산, 말론산, 숙신산, 푸마르산, 아디핀산, 안식향산, 프탈산 및, 시트르산 등을 들 수 있다.For example, organic acids useful in buffer systems include, but are not limited to, formic acid, trifluoroacetic acid, propionic acid, butyric acid, valeric acid, heptanoic acid, lactic acid, oxalic acid, malic acid, malonic acid, succinic acid, fumaric acid, adipic acid, benzoic acid Phthalic acid, citric acid, and the like.
또한, 본 발명의 완충계에 있어서 유용한 공역염기로서, 유기산의 염, 암모니아, 테트라메틸암모늄수산화물, 테트라알킬암모늄수산화물, 2-(메틸아미노)에탄올, 모노이소프로판올아민, 디글리콜아민, N,N-디메틸-2-(2-아미노에톡시)에탄올, 1-(2-아미노에틸)피페리딘, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(3-아미노프로필)-이미다졸, 1,8-디아자비시클로[5.4.0]-7-운데센, N.N.N'-트리메틸아미노에탄올아민, 펜타메틸디에틸렌트리아민, 에틸몰포린, 히드록시몰포린, 아미노프로필론몰포린, 트리에탄올아민 및 메틸디에탄올아민 등을 들 수 있다. 또한, 유용한 공역염기는, 상기 예시에 한정되지 않는다.Also useful as conjugated bases in the buffer system of the present invention are salts of organic acids, ammonia, tetramethylammonium hydroxide, tetraalkylammonium hydroxide, 2- (methylamino) ethanol, monoisopropanolamine, diglycolamine, N, N- Dimethyl-2- (2-aminoethoxy) ethanol, 1- (2-aminoethyl) piperidine, 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (3-aminopropyl) -imidazole, 1,8-diazabicyclo [5.4.0] -7-undecene, NNN'-trimethylaminoethanolamine, pentamethyldiethylenetriamine, ethylmorpholine, hydroxy Morpholine, aminopropylone morpholine, triethanolamine, methyldiethanolamine and the like. In addition, useful conjugated bases are not limited to the above examples.
또한, 카르복실산염, 황산염, 술폰산염, 포스폰산염, 질산염, 염산염 및, 붕산염으로 이루어지는 군에서 선택되는 1종 이상의 염인 것이 바람직하다. 구체적으로는, 아세트산암모늄, 시트르산암모늄, 옥살산암모늄, 술포숙신산암모늄, 황산암모늄, 메탄술폰산암모늄, 포스폰산암모늄, 질산암모늄, 염화암모늄, 4붕소암모늄, 아크릴산암모늄 등을 들 수 있다. 양이온에 주목하면 암모늄염 이외에도 아민염이라도 제4급 암모늄염이라도 좋다.Moreover, it is preferable that they are 1 or more types of salts chosen from the group which consists of carboxylate, sulfate, sulfonate, phosphonate, nitrate, hydrochloride, and borate. Specifically, ammonium acetate, ammonium citrate, ammonium oxalate, ammonium sulfosuccinate, ammonium sulfate, ammonium methane sulfonate, ammonium phosphonate, ammonium nitrate, ammonium chloride, ammonium tetraborate, ammonium acrylate, etc. are mentioned. In view of the cation, in addition to the ammonium salt, an amine salt or a quaternary ammonium salt may be used.
아민으로서는, 히드록실아민이나 디에틸히드록실아민 등의 히드록실아민류, 에틸아민, 프로판디아민, 디부틸아민, 트리메틸아민 등의 알킬아민류, 모노에탄올아민, 메틸에탄올아민, 메틸디에탄올아민, 트리에탄올아민, 모노이소프로판올아민, 디글리콜아민, N,N-디메틸-2-(2-아미노에톡시)에탄올 등의 알칸올아민류, 아닐린, 벤질아민 등의 방향족아민류, 에틸몰포린, 히드록시몰포린, 아미노프로필론몰포린 등의 몰포린류, 1-(2-아미노에틸)피페리딘, 1-(2-히드록시에틸)피페라진, 1-(2-아미노에틸)피페라진, 1-(3-아미노프로필)-이미다졸, 1,8-디아자비시클로[5.4.0]undec-7-ene, N.N.N'-트리메틸아미노에탄올아민, 펜타메틸디에틸렌트리아민 등을 들 수 있다. 또한, 상기 아민은, 염기성을 나타내는 것이면 좋고, 특별히 한정되는 것은 아니다.Examples of the amine include hydroxylamines such as hydroxylamine and diethylhydroxylamine, alkylamines such as ethylamine, propanediamine, dibutylamine, and trimethylamine, monoethanolamine, methylethanolamine, methyldiethanolamine, and triethanolamine. , Alkanolamines such as monoisopropanolamine, diglycolamine, N, N-dimethyl-2- (2-aminoethoxy) ethanol, aromatic amines such as aniline and benzylamine, ethylmorpholine, hydroxymorpholine and amino Morpholines such as propylron morpholine, 1- (2-aminoethyl) piperidine, 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (3-amino Propyl) -imidazole, 1,8-diazabicyclo [5.4.0] undec-7-ene, NNN'-trimethylaminoethanolamine, pentamethyldiethylenetriamine, etc. are mentioned. In addition, the said amine should just be basic, and it does not specifically limit.
제4급 암모늄염을 형성하는 제4급 암모늄이온으로서, 테트라메틸암모늄이온, 테트라에틸암모늄이온, 트리에틸메틸암모늄이온, 라우릴트리메틸암모늄이온, 벤질트리메틸암모늄이온 등을 들 수 있다.As quaternary ammonium ion which forms a quaternary ammonium salt, tetramethylammonium ion, tetraethylammonium ion, triethylmethylammonium ion, lauryl trimethylammonium ion, benzyl trimethylammonium ion, etc. are mentioned.
상기 완충제는, 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다.The buffer may be used either alone or in a mixture thereof.
상기 산화 방지제로서, 2,6-디-tert-부틸-4-메틸페놀, 2,5-디-tert-부틸히드로퀴논, 2,6-디-tert-부틸-α-디메틸아미노-p-크레졸 등의 모노페놀계 화합물을 들 수 있다. 또한, 4,4'-비스(2,6-디-tert-부틸페놀), 4,4'-메틸렌-비스(2,6-디-tert-부틸페놀), 2,2'-메틸렌-비스(4-메틸-6-tert-부틸페놀), 4,4'-메틸렌-비스(2,6-디-tert-부틸페놀), 4,4'-부틸리덴-비스(3-메틸-6-tert-부틸페놀) 등의 비스페놀 화합물을 들 수 있다. 또한, 4,4'-티오비스(3-메틸-6-tert-부틸페놀), 2,2'-티오비스(6-tert-부틸-o-크레졸), 2,2'-티오비스(4-메틸-6-tert-부틸페놀) 등의 티오비스페놀계 화합물을 들 수 있다. 또한, 테트라키스[메틸렌-3-(3,5-디-tert-부틸-4-히드록시페닐)프로피오네이트]메탄, 트리스(2-메틸-4-히드록시-5-tert-부틸-페놀)부탄 등의 트리스페놀계 화합물을 들 수 있다. 또한, 트리페닐포 스파이트, 트리스노닐페닐포스파이트, 트리스(모노 및 디-노닐페닐)포스파이트 등의 포스파이트계 산화 방지제를 들 수 있다. 또한, 디라우릴디프로피오네이트, 디스테아릴티오디프로피오네이트 등의 유황계 산화 방지제를 들 수 있다.As the antioxidant, 2,6-di-tert-butyl-4-methylphenol, 2,5-di-tert-butylhydroquinone, 2,6-di-tert-butyl-α-dimethylamino-p-cresol and the like The monophenol type compound can be mentioned. 4,4'-bis (2,6-di-tert-butylphenol), 4,4'-methylene-bis (2,6-di-tert-butylphenol), 2,2'-methylene-bis (4-methyl-6-tert-butylphenol), 4,4'-methylene-bis (2,6-di-tert-butylphenol), 4,4'-butylidene-bis (3-methyl-6 and bisphenol compounds such as -tert-butylphenol). Further, 4,4'-thiobis (3-methyl-6-tert-butylphenol), 2,2'-thiobis (6-tert-butyl-o-cresol), 2,2'-thiobis (4 Thiobisphenol type compounds, such as -methyl-6-tert- butylphenol), are mentioned. In addition, tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane, tris (2-methyl-4-hydroxy-5-tert-butyl-phenol Trisphenol type compounds, such as butane, are mentioned. Moreover, phosphite type antioxidants, such as a triphenyl phosphite, a trisnonyl phenyl phosphite, and a tris (mono and di-nonylphenyl) phosphite, are mentioned. Moreover, sulfur type antioxidants, such as a dilauryl dipropionate and a distearyl thiodipropionate, are mentioned.
상기 산화 방지제는 단독 또는 그들의 혼합물 중 어느 쪽으로 이용해도 좋다. 또한, 산화 방지제의 사용량은, 레지스트 박리제에 대하여 약 0.01∼1.0 중량%의 첨가가 바람직하다.The antioxidant may be used either alone or in a mixture thereof. In addition, as for the usage-amount of antioxidant, addition of about 0.01-1.0 weight% is preferable with respect to a resist stripping agent.
이와 같이 본 실시 형태에 따른 레지스트 박리제는, 화학식 1로 나타나는 알콕시아미드계의 화합물을 이용함으로써, 높은 박리 성능을 가짐과 아울러, 구리나 알루미늄 등에 대한 방식성이 매우 우수하다. 또한, 수계 박리제로 함으로써, 인화성이 없어 안전하며, 또한, 수용성을 가지고 있기 때문에, 물 린스가 가능하며, 그리고, IPA 린스가 불필요하기 때문에, 생산성을 향상시킬 수 있다.Thus, by using the alkoxy amide type compound represented by General formula (1), the resist stripping agent which concerns on this embodiment has high peeling performance, and is very excellent in corrosion resistance with respect to copper, aluminum, etc .. Moreover, since it is safe, and has water solubility, since it is a water-based peeling agent, since water rinsing is possible and IPA rinsing is unnecessary, productivity can be improved.
다음으로, 상기 레지스트 박리제의 실시예 및 비교예에 대하여, 도1 의 표1 및 도2 의 표2 를 참조하여 설명한다.Next, the Example and the comparative example of the said resist stripping agent are demonstrated with reference to Table 1 of FIG. 1, and Table 2 of FIG.
(실시예 1)(Example 1)
도1 은, 실시예 1∼15에 대한 박리제종(박리액의 조성), 박리 성능 및, 방식 성능을 나타낸 표1 을 나타내고 있다.BRIEF DESCRIPTION OF THE DRAWINGS Table 1 which shows the peeling agent type (composition of the peeling liquid), peeling performance, and anticorrosive performance about Examples 1-15 is shown.
또한, 도2 는, 비교예 1∼6에 대한 박리제종(박리액의 조성), 박리 성능 및, 방식 성능을 나타낸 표2 를 나타내고 있다.2 has shown Table 2 which showed the peeling agent type (composition of the peeling liquid), peeling performance, and anticorrosive performance with respect to Comparative Examples 1-6.
우선, 실시예 1∼15와 비교예 1∼6에 대한 공통의 레지스트 박리 성능 평가법(레지스트 기판, 박리 시험 및, 부식 시험) 등에 대하여 설명한다.First, the common resist peeling performance evaluation method (resist substrate, peeling test, and corrosion test) for Examples 1 to 15 and Comparative Examples 1 to 6 will be described.
<레지스트 기판><Resist Substrate>
기판: 히다치킨조쿠 가부시키가이샤 제조의 성막 유리(사이즈 약 100mm×100mm)를 사용했다.Substrate: The film-forming glass (size about 100 mm x 100 mm) by the Hitachi KINJUKU Corporation was used.
레지스트: 후지필름일렉트로닉스마테리알즈 가부시키가이샤의 HPR204(나프토퀴논디아지드/노볼락 수지)를 도포하여, 소정의 온도로 약 15분간 오븐 안에서 베이킹한 것을 사용했다. 즉, 실시예 1, 2, 3, 5∼8, 10∼15, 및, 비교예 1, 3∼6은, 약 130℃로 약 15분간 오븐 안에서 베이킹한 것을 사용했다. 또한, 실시예 4, 9, 및, 비교예 2는, 약 150℃로 약 15분간 오븐 안에서 베이킹한 것을 사용했다.Resist: HPR204 (naphthoquinone diazide / novolak resin) manufactured by Fujifilm Electronics Materials Co., Ltd. was applied and baked in an oven at a predetermined temperature for about 15 minutes. That is, Example 1, 2, 3, 5-8, 10-15, and Comparative Examples 1, 3-6 used the thing baked in oven at about 130 degreeC for about 15 minutes. In addition, Example 4, 9 and the comparative example 2 used what baked in oven at about 150 degreeC for about 15 minutes.
또한, 박리성을 평가하는 경우는, 상기 레지스트 기판을 약 10mm×5mm로 절단한 시험편을 이용했다.In addition, when evaluating peelability, the test piece which cut | disconnected the said resist substrate to about 10 mm x 5 mm was used.
<박리 시험><Peel test>
박리 성능은 하기의 2개의 평가법으로 평가했다.Peeling performance was evaluated by the following two evaluation methods.
레지스트 박리성-1: 약 30ml의 샘플 병에, 박리제 약 5ml와 상기 제작한 레지스트 기판의 시험편을 1장 넣어, 소정의 온도에서 교반하면서 액 중의 유리 기판이 무색 투명해지기까지의 시간을 측정하여, 하기와 같이 판단했다.Resist peelability-1: In about 30 ml of sample bottles, about 5 ml of a peeling agent and one test piece of the produced said resist substrate were put, and the time until the glass substrate in a liquid becomes colorless and transparent was stirred at predetermined temperature, It judged as follows.
○ : 투명해지기까지의 시간이 40sec 미만.(Circle): Time to become transparent is less than 40sec.
× : 투명해지기까지의 시간이 40sec 이상.X: The time until it becomes transparent is 40 sec or more.
또한, 실시예 1, 2, 3, 5∼8, 10∼15, 및, 비교예 1, 3∼6은, 교반할 때의 상기 소정의 온도를 실온(예를 들면, 0∼30℃이며, 통상, 20∼25℃)으로 했다. 또한, 실시예 4, 9, 및, 비교예 2는, 교반할 때의 상기 소정의 온도를 약 40℃로 했 다.In addition, in Example 1, 2, 3, 5-8, 10-15, and Comparative Examples 1, 3-6, the said predetermined temperature at the time of stirring is room temperature (for example, 0-30 degreeC, Usually, it was set to 20-25 degreeC). In addition, Example 4, 9 and the comparative example 2 made the said predetermined temperature at the time of stirring about 40 degreeC.
레지스트 박리성-2: 약 30ml의 샘플 병에, 박리제 약 5ml와 상기 제작한 레지스트 기판의 시험편을 1장 넣어, 소정의 온도에서 약 60sec간 교반하여, 박리시킨 후, 레지스트 기판을 취출하여 즉시 아세톤린스 후, 약 50℃하에서 약 30분 건조 후의 표면을 관찰하여, 하기와 같이 판단했다.Resist stripping property-2: About 5 ml of releasing agent and one test piece of the produced said resist substrate were put into a sample bottle of about 30 ml, stirred at a predetermined temperature for about 60 sec, and peeled off, and after taking out a resist substrate, the acetone was immediately taken out. After rinsing, the surface after drying for about 30 minutes was observed at about 50 degreeC, and it judged as follows.
○ : 유리 기판 표면에 전혀 불투명한 부분이 없고, 레지스트가 완전하게 세정 박리되어 있다.(Circle): There is no opaque part in the glass substrate surface at all, and the resist is wash | cleaning and peeling completely.
△ : 유리 기판 표면에 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다.(Triangle | delta): There exists a part which is slightly opaque on the glass substrate surface, and the resist is wash | cleaned and peeled off substantially.
× : 유리 기판 표면의 절반 이상에 불투명한 부분이 있고, 세정 박리가 불충분하며, 상당히 레지스트가 잔존해 있다.X: There exists an opaque part in more than half of the surface of a glass substrate, insufficient cleaning peeling, and the resist remain | survives considerably.
또한, 실시예 1, 2, 3, 5∼8, 10∼15, 및, 비교예 1, 3∼6은, 약 60sec간 교반할 때의 상기 소정의 온도를 실온(예를 들면, 0∼30℃이며, 통상, 20∼25℃)으로 했다. 또한, 실시예 4, 9 및, 비교예 2는, 약 60sec간 교반할 때의 상기 소정의 온도를 약 40℃로 했다.In addition, in Examples 1, 2, 3, 5-8, 10-15, and Comparative Examples 1, 3-6, the said predetermined temperature at the time of stirring for about 60 sec is room temperature (for example, 0-30). It is C, and is usually 20-25 degreeC). In addition, in Example 4, 9 and the comparative example 2, the said predetermined temperature at the time of stirring for about 60 sec was made into about 40 degreeC.
<부식 시험>Corrosion Test
방식 성능은 하기의 2개의 평가법으로 평가했다.Anticorrosive performance was evaluated by the following two evaluation methods.
방식성-1: 약 30ml의 샘플 병에, 박리제를 넣어, 그 안에 직경 약 0.5mm의 구리선 약 100mm를 뭉쳐서 침지시키고, 1주간 후의 착색 정도를 관찰하여, 하기와 같이 판단했다.Anticorrosive-1: A peeling agent was put in about 30 ml of sample bottles, and about 100 mm of copper wire of about 0.5 mm in diameter was agglomerated and immersed, and the coloring degree after 1 week was observed, and it judged as follows.
○ : 전혀 변색 없음.(Circle): No discoloration at all.
△ : 아주 조금 연한 청색으로 변색.(Triangle | delta): It changes into very light blue.
× : 확실하게 청색으로 변색.X: Discoloration to blue reliably.
방식성-2: Mo(몰리브덴)/Al/Mo의 적층 배선 기판을 제작하여, 이 시험편(약 10mm×5mm)을 약 30ml의 샘플 병에 넣고, 박리제 약 5ml를 첨가하여, 약 40℃로 약 5분간 침지시켰다. 침지·부식 조작 후, 하기의 순서로 관찰하여, 하기와 같이 판단했다.Anticorrosive-2: A laminated wiring board of Mo (molybdenum) / Al / Mo was produced, and this test piece (about 10 mm x 5 mm) was placed in a sample bottle of about 30 ml, about 5 ml of a release agent was added, and the solution was about 40 ° C. Soak for 5 minutes. After immersion and corrosion operation, it observed in the following procedure, and judged as follows.
순서 1로서, IPA 린스를 행하고, 순서 2로서, 아세톤린스를 행하고, 순서 3으로서, 약 50℃로 약 30분 건조하여, SEM(주사 전자 현미경)으로 Al의 부식 상태를 관찰했다.As
○ : 전혀 변화 없음.○: no change at all.
△ : 아주 조금 Al이 용출하여, 부식이 관찰되었다.(Triangle | delta): Al eluted very little and corrosion was observed.
× : 확실하게 Al이 용출하여, 심한 부식이 관찰되었다.X: Al eluted reliably and severe corrosion was observed.
또한, 실시예 1∼15와 비교예 1∼10에 대한 결과를 표1 및 표2 에 나타냈다.Moreover, the result about Examples 1-15 and Comparative Examples 1-10 was shown in Table 1 and Table 2.
실시예 1에 따른 박리제로서, 약 80 중량%의 3-메톡시-N,N-디메틸프로피온아미드(적절히, MDMPA로 약칭함)와 약 20 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 1, a resist release agent consisting of about 80% by weight of 3-methoxy-N, N-dimethylpropionamide (abbreviated as MDMPA) and about 20% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성- 1: ○(기판이 투명해지기까지의 시간은, 38초였다.)Resist stripping property-1 (circle) (The time until a board | substrate became transparent was 38 second.)
레지스트 박리성- 2: ○Resist stripping property-2:
방식성- 1: ○Anticorrosive-1: ○
방식성- 2: ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 2)(Example 2)
실시예 2에 따른 박리제로서, 약 60 중량%의 3-메톡시-N,N-디메틸프로피온아미드와 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 2, a resist release agent consisting of about 60% by weight of 3-methoxy-N, N-dimethylpropionamide and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 39초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 39 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(실시예 3)(Example 3)
실시예 3에 따른 박리제로서, 약 100 중량%의 3-메톡시-N,N-디메틸프로피온아미드로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 3, a resist release agent composed of about 100% by weight of 3-methoxy-N, N-dimethylpropionamide was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 32초였다.)Resist peelability -1: (The time until the board became transparent was 32 seconds.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 4)(Example 4)
실시예 4에 따른 박리제로서, 약 100 중량%의 3-메톡시-N,N-디메틸프로피온아미드로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 4, a resist release agent composed of about 100% by weight of 3-methoxy-N, N-dimethylpropionamide was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 35초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 35 second.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 5)(Example 5)
실시예 5에 따른 박리제로서, 약 100 중량%의 3-부톡시-N,N-디메틸프로피온아미드(적절히, BDMPA로 약칭함)로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 5, a resist release agent consisting of about 100% by weight of 3-butoxy-N, N-dimethylpropionamide (suitably abbreviated as BDMPA) was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 31초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 31 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(실시예 6)(Example 6)
실시예 6에 따른 박리제로서, 약 80 중량%의 3-부톡시-N,N-디메틸프로피온아미드와 약 20 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 6, a resist release agent consisting of about 80% by weight of 3-butoxy-N, N-dimethylpropionamide and about 20% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 24초였다.)Resist peelability -1: (The time until the board became transparent was 24 seconds.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(실시예 7)(Example 7)
실시예 7에 따른 박리제로서, 약 60 중량%의 3-부톡시-N,N-디메틸프로피온아미드와 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 7, a resist release agent consisting of about 60% by weight of 3-butoxy-N, N-dimethylpropionamide and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 29초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 29 second.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 8)(Example 8)
실시예 8에 따른 박리제로서, 약 40 중량%의 3-부톡시-N,N-디메틸프로피온아미드와 약 60 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 8, a resist release agent consisting of about 40% by weight of 3-butoxy-N, N-dimethylpropionamide and about 60% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 24초였다.)Resist peelability -1: (The time until the board became transparent was 24 seconds.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 9)(Example 9)
실시예 9에 따른 박리제로서, 약 60 중량%의 3-부톡시-N,N-디메틸프로피온아미드와 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 9, a resist release agent consisting of about 60% by weight of 3-butoxy-N, N-dimethylpropionamide and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 39초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 39 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(실시예 10)(Example 10)
실시예 10에 따른 박리제로서, 약 100 중량%의 3-메톡시-N,N-디에틸프로피온아미드(적절히, MDEPA로 약칭함)로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 10, a resist release agent composed of about 100% by weight of 3-methoxy-N, N-diethylpropionamide (suitably abbreviated as MDEPA) was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 30초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 30 second.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 11)(Example 11)
실시예 11에 따른 박리제로서, 약 80 중량%의 3-메톡시-N,N-디에틸프로피온아미드와 약 20 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 11, a resist release agent consisting of about 80% by weight of 3-methoxy-N, N-diethylpropionamide and about 20% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 18초였다.)Resist peelability -1: (The time until the board became transparent was 18 seconds.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 12)(Example 12)
실시예 12에 따른 박리제로서, 약 60 중량%의 3-메톡시-N,N-디에틸프로피온아미드와 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 12, a resist release agent consisting of about 60% by weight of 3-methoxy-N, N-diethylpropionamide and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 28초였다.)Resist peelability -1: (The time until a board | substrate becomes transparent was 28 second.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 13)(Example 13)
실시예 13에 따른 박리제로서, 약 100 중량%의 3-에톡시-N,N-디에틸프로피온아미드(적절히, EDEPA로 약칭함)로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 13, a resist release agent consisting of about 100% by weight of 3-ethoxy-N, N-diethylpropionamide (suitably abbreviated as EDEPA) was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 19초였다.)Resist peelability -1: (The time until a board | substrate becomes transparent was 19 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(실시예 14)(Example 14)
실시예 14에 따른 박리제로서, 약 80 중량%의 3-에톡시-N,N-디에틸프로피온 아미드와 약 20 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 14, a resist release agent consisting of about 80% by weight of 3-ethoxy-N, N-diethylpropion amide and about 20% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 19초였다.)Resist peelability -1: (The time until a board | substrate becomes transparent was 19 second.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 박리 성능 및 방식 성능이 우수했다.It was. This resist releasing agent was excellent in peeling performance and anticorrosive performance.
(실시예 15)(Example 15)
실시예 15에 따른 박리제로서, 약 60 중량%의 3-에톡시-N,N-디에틸프로피온아미드와 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Example 15, a resist release agent consisting of about 60% by weight of 3-ethoxy-N, N-diethylpropionamide and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표1 에 나타내는 바와 같이,Test results, as shown in Table 1,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 29초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 29 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ○Anticorrosive-1: ○
방식성-2 : ○Anticorrosive-2: ○
였다. 이 레지스트 박리제는, 레지스트 박리성-2에 있어서, 유리 기판 표면에 아주 조금 불투명한 부분이 있고, 거의 레지스트가 세정 박리되어 있다(미량의 레지스트 잔사가 발견된다). 또한, 이 레지스트 박리제는, 다른 시험에 있어서는, 박리 성능 및 방식 성능이 우수했다.It was. In this resist stripper-2, the resist stripping agent has a slightly opaque portion on the surface of the glass substrate, and the resist is almost washed off (a trace amount of resist residue is found). In addition, this resist releasing agent was excellent in peeling performance and anticorrosive performance in another test.
(비교예 1)(Comparative Example 1)
비교예 1에 따른 박리제로서, 약 30 중량%의 디메틸술폭시드(적절히, DMSO로 약칭함)와, 약 70 중량%의 모노에탄올아민(적절히, MEA로 약칭함)으로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a releasing agent according to Comparative Example 1, a resist releasing agent consisting of about 30% by weight of dimethyl sulfoxide (suitably abbreviated as DMSO) and about 70% by weight of monoethanolamine (as appropriately abbreviated as MEA) was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ×(기판이 투명해지기까지의 시간은, 45초였다.)Resist peelability -1: x (time until board became transparent was 45 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : △Anticorrosive-1: △
방식성-2 : △Anticorrosion-2: △
였다. 이 레지스트 박리제는, 레지스트 박리성-1에 있어서, 박리에 긴 시간을 필요로 하고, 또한, 레지스트 박리성-2에 있어서, 미량의 레지스트 잔사가 발견되었다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 아주 조금 연한 청색으로 변색하고, 또한, 방식성-2에 있어서, 아주 조금 Al이 용출하여, 부식이 관찰되었다.It was. This resist releasing agent required a long time for peeling in resist peelability-1, and a trace amount of resist residue was found in resist peelability-2. In addition, in this anticorrosive-1, this resist releasing agent discolored very light blue, and in anticorrosive-2, Al eluted very little and corrosion was observed.
(비교예 2)(Comparative Example 2)
비교예 2에 따른 박리제로서, 약 30 중량%의 디메틸술폭시드(적절히, DMSO로 약칭함)와, 약 70 중량%의 모노에탄올아민(적절히, MEA로 약칭함)으로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였 다.As a releasing agent according to Comparative Example 2, a resist releasing agent consisting of about 30% by weight of dimethyl sulfoxide (as appropriately abbreviated as DMSO) and about 70% by weight of monoethanolamine (as appropriately abbreviated as MEA) was prepared. Subsequently, the peeling test and the corrosion test were performed.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ×(기판이 투명해지기까지의 시간은, 50초였다.)Resist peelability -1: x (time until board became transparent was 50 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : △Anticorrosive-1: △
방식성-2 : △Anticorrosion-2: △
였다. 이 레지스트 박리제는, 레지스트 박리성-1에 있어서, 박리에 긴 시간을 필요로 하고, 또한, 레지스트 박리성-2에 있어서, 미량의 레지스트 잔사가 발견되었다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 아주 조금 연한 청색으로 변색하고, 또한, 방식성-2에 있어서, 아주 조금 Al이 용출하여, 부식이 관찰되었다.It was. This resist releasing agent required a long time for peeling in resist peelability-1, and a trace amount of resist residue was found in resist peelability-2. In addition, in this anticorrosive-1, this resist releasing agent discolored very light blue, and in anticorrosive-2, Al eluted very little and corrosion was observed.
(비교예 3)(Comparative Example 3)
비교예 3에 따른 박리제로서, 약 34 중량%의 디에틸렌글리콜모노부틸에테르와, 약 46 중량%의 모노에탄올아민과, 약 20 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Comparative Example 3, a resist release agent composed of about 34% by weight of diethylene glycol monobutyl ether, about 46% by weight of monoethanolamine, and about 20% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ×(기판이 투명해지기까지의 시간은, 56초였다.)Resist Peeling Properties-1: × (The time until the substrate became transparent was 56 seconds.)
레지스트 박리성-2 : ×Resist Peelability-2: ×
방식성-1 : △Anticorrosive-1: △
방식성-2 : △Anticorrosion-2: △
였다. 이 레지스트 박리제는, 레지스트 박리성-1에 있어서, 박리에 긴 시간을 필요로 하고, 또한, 레지스트 박리성-2에 있어서, 유리 기판 표면의 절반 이상에 불투명한 부분이 있고, 세정 박리가 불충분하여, 상당히 레지스트가 잔존해 있었다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 아주 조금 연한 청색으로 변색하고, 또한, 방식성-2에 있어서, 아주 조금 Al이 용출하여, 부식이 관찰되었다.It was. This resist releasing agent requires a long time for peeling in resist peelability-1, and in resist peelability-2, there is an opaque portion on at least half of the glass substrate surface, and the cleaning peeling is insufficient. There was considerable resist remaining. In addition, in this anticorrosive-1, this resist releasing agent discolored very light blue, and in anticorrosive-2, Al eluted very little and corrosion was observed.
(비교예 4)(Comparative Example 4)
비교예 4에 따른 박리제로서, 약 26 중량%의 디에틸렌글리콜모노부틸에테르와, 약 34 중량%의 모노에탄올아민과, 약 40 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Comparative Example 4, a resist release agent consisting of about 26% by weight of diethylene glycol monobutyl ether, about 34% by weight of monoethanolamine, and about 40% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 38초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 38 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ×Anticorrosive-1: ×
방식성-2 : ×Anticorrosive-2: ×
였다. 이 레지스트 박리제는, 레지스트 박리성-1에 있어서, 박리성이 우수하기는 하지만, 레지스트 박리성-2에 있어서, 미량의 레지스트 잔사가 발견되었다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 확실하게 청색으로 변색하고, 또한, 방식성-2에 있어서, 확실하게 Al이 용출하여, 심한 부식이 관찰되었다.It was. Although this resist releasing agent was excellent in peelability in resist peelability-1, a trace amount of resist residue was found in resist peelability-2. In addition, this resist releasing agent discolored blue reliably in anticorrosive-1, and Al reliably eluted in anticorrosive-2, and severe corrosion was observed.
(비교예 5)(Comparative Example 5)
비교예 5에 따른 박리제로서, 약 17 중량%의 디에틸렌글리콜모노부틸에테르와, 약 23 중량%의 모노에탄올아민과, 약 60 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Comparative Example 5, a resist release agent consisting of about 17% by weight of diethylene glycol monobutyl ether, about 23% by weight of monoethanolamine, and about 60% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 24초였다.)Resist peelability -1: (The time until the board became transparent was 24 seconds.)
레지스트 박리성-2 : ○Resist Peelability-2: ○
방식성-1 : ×Anticorrosive-1: ×
방식성-2 : ×Anticorrosive-2: ×
였다. 이 레지스트 박리제는, 박리성이 우수했다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 확실하게 청색으로 변색하고, 또한, 방식성-2에 있어서, 확실하게 Al이 용출하여, 심한 부식이 관찰되었다.It was. This resist releasing agent was excellent in peelability. In addition, this resist releasing agent discolored blue reliably in anticorrosive-1, and Al reliably eluted in anticorrosive-2, and severe corrosion was observed.
(비교예 6)(Comparative Example 6)
비교예 6에 따른 박리제로서, 약 9 중량%의 디에틸렌글리콜모노부틸에테르와, 약 11 중량%의 모노에탄올아민과, 약 80 중량%의 물로 이루어지는 레지스트 박리제를 준비했다. 계속해서, 상기 박리 시험 및 부식 시험을 행하였다.As a release agent according to Comparative Example 6, a resist release agent composed of about 9% by weight of diethylene glycol monobutyl ether, about 11% by weight of monoethanolamine, and about 80% by weight of water was prepared. Then, the said peeling test and the corrosion test were done.
시험 결과는, 표2 에 나타내는 바와 같이,The test results are shown in Table 2,
레지스트 박리성-1 : ○(기판이 투명해지기까지의 시간은, 29초였다.)Resist peelability -1: (The time until a board | substrate became transparent was 29 second.)
레지스트 박리성-2 : △Resist Peelability-2: △
방식성-1 : ×Anticorrosive-1: ×
방식성-2 : ×Anticorrosive-2: ×
였다. 이 레지스트 박리제는, 레지스트 박리성-1에 있어서, 박리성이 우수하기는 하지만, 레지스트 박리성-2에 있어서, 미량의 레지스트 잔사가 발견되었다. 또한, 이 레지스트 박리제는, 방식성-1에 있어서, 확실하게 청색으로 변색하고, 또한, 방식성-2에 있어서, 확실하게 Al이 용출하여, 심한 부식이 관찰되었다.It was. Although this resist releasing agent was excellent in peelability in resist peelability-1, a trace amount of resist residue was found in resist peelability-2. In addition, this resist releasing agent discolored blue reliably in anticorrosive-1, and Al reliably eluted in anticorrosive-2, and severe corrosion was observed.
상기 각 실시예의 시험 결과로부터, 모든 실시예에 있어서, 방식 성능이 우수하다는 것을 확인할 수 있었다. 또한, 박리 성능에 있어서는, 실시예 2, 5, 6, 9, 13, 15에 있어서, 미량의 레지스트 잔사가 발견되기는 했지만, 다른 실시예에 있어서는, 박리 성능도 우수하다는 것을 확인할 수 있었다.From the test results of the above examples, it was confirmed that the anticorrosive performance was excellent in all the examples. In addition, in Example 2, 5, 6, 9, 13, 15, although a trace amount of the resist residue was found in peeling performance, it was confirmed that peeling performance is also excellent in another Example.
또한, 상기 각 비교예의 시험 결과로부터, 모든 비교예에 있어서, 박리 성능 및 방식 성능의 양쪽을 만족시킬 수 없었다.In addition, from the test result of each said comparative example, in all the comparative examples, both peeling performance and anticorrosive performance could not be satisfied.
이상, 본 발명의 레지스트 박리제에 대하여, 바람직한 실시 형태를 나타내어 설명했지만, 본 발명에 따른 레지스트 박리제는, 전술한 실시 형태에만 한정되는 것이 아니고, 본 발명의 범위에서 여러 가지의 변경 실시가 가능하다는 것은 말할 필요도 없다.As mentioned above, although the preferred embodiment was demonstrated and demonstrated about the resist stripper of this invention, it is not limited only to embodiment mentioned above, and the resist stripper which concerns on this invention can be variously changed in the scope of the present invention. Needless to say.
예를 들면, 레지스트 박리제에 포함되는 식(1)로 나타나는 화합물은, 한 종류에 한정되는 것은 아니고, 예를 들면, 식(1)로 나타나는 2이상의 화합물이 포함된 레지스트 박리제라도 좋다.For example, the compound represented by Formula (1) contained in a resist stripping agent is not limited to one type, For example, the resist stripping agent containing two or more compounds represented by Formula (1) may be sufficient.
또한, 본 발명의 용도로서는, 액정·반도체용 레지스트 박리제에 한정되는 것이 아니고, 예를 들면, 프린트 기판용 박리제, 레지스트 현상액, 플럭스 세정제, 수지 용제(예를 들면, 폴리이미드수지용 용제, 폴리아미드수지용 용제) 등으로서도 이용된다.In addition, the use of this invention is not limited to the resist stripping agent for liquid crystals and semiconductors, For example, the stripping agent for printed boards, a resist developing solution, a flux cleaning agent, a resin solvent (for example, a solvent for polyimide resins, a polyamide) Solvent for resins).
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JP2009249297A (en) * | 2008-04-02 | 2009-10-29 | Idemitsu Kosan Co Ltd | N,n-dimethylpropionamide compound and method for producing the same, and resist-peeling agent using the same |
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