KR20090001257A - Fuse of semiconductor device and method for forming the same - Google Patents

Abstract

The semiconductor device and a method of forming the same are provided to form the barrier film at the interface between the fuse line and the interlayer insulating film and to prevent the crack generated in the fuse line in the fuse blowing process. The interlayer insulating film(210) having a plurality of grooves is formed in the fuse regions of the semiconductor substrate(200). The barrier film(216) is formed on the interlayer insulating film including the surface of groove. The fuse line conductive film for filling the groove is deposited on the barrier film. The conductive film and barrier film are removed until the top of the interlayer insulating film is exposed. The barrier film is formed with the lamination film structure of the oxide film and nitride film. The barrier film is formed with two or more multi-layer film structures. The fuse line conductive film is deposited with the metal layer or the polysilicon layer.

Description

Fuse of semiconductor device and method for forming thereof {FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME}

1 is a cross-sectional view for explaining a conventional problem.

2 is a cross-sectional view illustrating a fuse of a semiconductor device according to an embodiment of the present invention.

3A through 3E are cross-sectional views illustrating processes of forming a fuse of a semiconductor device in accordance with an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

200 semiconductor substrate 210 interlayer insulating film

H: groove 212: nitride film

214: oxide film 216: barrier film

220: conductive film for fuse line FL: fuse line

230: insulating film

The present invention relates to a fuse of a semiconductor device and a method of forming the same, and more particularly, to a semiconductor device and a method of forming the same that can prevent cracks caused when the fuse is cut.

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to operate at a high speed and to have a large storage capacity. Accordingly, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, and response speed.

A semiconductor device mainly includes a fabrication (FAB) process of repeatedly forming a circuit pattern set on a silicon substrate to form cells having an integrated circuit, and packaging the substrate on which the cells are formed in a chip unit (Chip). Packaging and assembly process. In addition, a process for inspecting electrical characteristics of cells formed on the substrate is performed between the fabrication process and the assembly process.

The inspection step is a step of determining whether the cells formed on the substrate have an electrically good state or a bad state. This is to reduce the effort and cost consumed in the assembly process by removing the cells having a bad state through the inspection process before performing the assembly process. In order to detect the cells having the defective state at an early stage and regenerate them through a repair process.

Here, the repair process will be described in more detail as follows.

Redundancy cells are added to replace defective devices or circuits in the design of devices for the purpose of improving the yield of devices in the event of a defect in the semiconductor device manufacturing process, and to connect these redundant cells to the integrated circuit. The fuse is designed together, and the repair process is a process in which a cell, which has been found to be defective through an inspection process, is connected to a spare cell embedded in a chip using the fuse to be regenerated. That is, by cutting only specific fuses, location information of cells to be repaired is generated.

Hereinafter, a repair method of a semiconductor device according to the prior art will be briefly described.

First, an interlayer insulating film having a flattened surface is deposited on a fuse area of a semiconductor substrate, and then a plurality of fuses are formed on the interlayer insulating film. The fuses are formed in a line type having a uniform width and thickness. Then, an insulating film and a protective film are sequentially deposited on the resultant of the semiconductor substrate so as to cover the fuses. Subsequently, a partial thickness of the passivation layer and the insulating layer is etched to form a repair trench for leaving an insulating layer having a predetermined thickness on the fuse formed in the blowing region.

Then, a known inspection and repair process including a fuse blowing process of cutting a specific fuse by irradiating a laser to a fuse region of the semiconductor substrate on which the repair trench is formed is sequentially performed.

However, in the above-described prior art, an explosion process due to energy applied when cutting the fuse is involved, and a crack is generated in the interlayer insulating film under the fuse due to the impact of the explosion.

1 is a cross-sectional view of a semiconductor device for explaining a conventional problem.

As shown, if a crack is generated during the cutting of the fuse 120, the crack propagates to the periphery of the interlayer insulating film 110 and causes structural defects of the semiconductor device. Degrades.

Here, reference numeral 100 in FIG. 1 denotes a semiconductor substrate, and 130 denotes an insulating film.

The present invention provides a fuse of a semiconductor device and a method of forming the same that can prevent cracks caused when cutting a fuse.

In addition, the present invention provides a fuse and a method of forming the semiconductor device that can prevent the cracks to improve device characteristics and reliability.

A fuse of a semiconductor device according to the present invention includes a plurality of fuse lines formed in a fuse region of a semiconductor substrate, and each of the fuse lines is configured to block cracks from propagating to a lower interlayer insulating layer during a fuse blowing process. A barrier film is provided.

The fuse line is formed to fill a groove provided in the interlayer insulating film.

The barrier film is formed at an interface between the fuse line and the interlayer insulating film.

The barrier film has a laminated film structure of a nitride film and an oxide film.

The barrier film has at least two multilayer film structures.

The fuse line is made of a metal film or a polysilicon film.

In addition, the fuse forming method of the semiconductor device according to the present invention comprises the steps of: forming an interlayer insulating film having a plurality of grooves in the fuse region of the semiconductor substrate; Forming a barrier film on the interlayer insulating film including the surface of the groove; Depositing a conductive film for a fuse line to fill the groove on the barrier film; And removing the conductive layer and the barrier layer until the upper portion of the interlayer insulating layer is exposed.

The barrier film is formed in a laminated film structure of a nitride film and an oxide film.

The barrier film is formed of at least two or more multilayer film structures.

The fuse line conductive film is deposited by a metal film or a polysilicon film.

Removal of the conductive layer and the barrier layer is performed by an etch back process.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention forms a fuse in the interlayer insulating film through a damascene process, and forms a barrier film formed of a double layer structure of a nitride film and an oxide film between the fuse and the interlayer insulating film. In this case, the fuse is formed of a metal film such as an aluminum film or a tungsten film, or a polysilicon film.

In this way, a crack may be prevented from occurring in the interlayer insulating layer under the fuse during the fuse blowing process for cutting the fuse, thereby preventing the crack from propagating to the periphery thereof, thereby improving device characteristics and reliability. You can.

2 is a cross-sectional view illustrating a fuse of a semiconductor device in accordance with an embodiment of the present invention.

As illustrated, a plurality of fuse lines FL formed of a metal film or a polysilicon film is formed in the fuse region of the semiconductor substrate 200, and each of the fuse lines FL is disposed between the lower layers during the fuse blowing process. A barrier film 216 is provided to block cracks from propagating through the insulating film 210.

The fuse line FL is formed to fill the groove H provided in the interlayer insulating layer 210 through a damascene process, and the barrier layer 216 is formed between the fuse line FL and the interlayer. It is formed at the interface between the insulating film 210. The barrier film 216 has at least two or more multilayered film structures, and preferably, has a laminated film structure of the nitride film 212 and the oxide film 214. Subsequently, an insulating layer 230 is deposited to cover the plurality of fuse lines FL.

Subsequently, although not illustrated, a fuse blowing process of cutting a specific fuse line FL by irradiating a laser to a fuse region of the semiconductor substrate 200 in which a portion of the insulating layer 230 is etched to form a trench for repair is formed. The inspection and repair process are carried out in turn.

The present invention described above, by forming a barrier film having a different type of multilayer film structure between the fuse line and the interlayer insulating film, it is possible to prevent the occurrence of cracks due to the energy applied during the fuse blowing process, therefore, the present invention It is possible to suppress the propagation of the crack to the lower portion of the interlayer insulating film to improve device characteristics and reliability.

3A to 3E are cross-sectional views illustrating processes of forming a fuse of a semiconductor device according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, an interlayer insulating layer 210 is deposited on a semiconductor substrate 200 on which a predetermined lower structure (not shown) is formed to cover the lower structure. Next, the plurality of grooves H are formed by etching the interlayer insulating layer 210 formed in the fuse region of the semiconductor substrate 200.

Referring to FIG. 3B, after the nitride film 212 is deposited on the interlayer insulating film 210 including the surface of the groove H, an oxide film 214 is deposited on the nitride film 212 to form the nitride film 212. The barrier film 216 formed of the laminated film structure of the peroxide film 214 is formed. The barrier film may be formed in a multilayered film structure composed of at least two different types of films instead of the laminated film structure of the nitride film 212 and the oxide film 214.

Referring to FIG. 3C, a fuse line conductive film 220 is deposited to fill the barrier H 216. The fuse line conductive film 220 is deposited using a metal film or a polysilicon film. In this case, an aluminum film or a tungsten film is preferably used as the metal film.

Referring to FIG. 3D, the fuse line conductive layer 220 and the barrier layer 216 are etched back until the upper portion of the interlayer insulating layer 210 is exposed, thereby forming the interlayer insulating layer 210. Fuse lines FL including the barrier layer 216 are formed between the conductive layers 220 for fuse lines.

Referring to FIG. 3E, an insulating film 230 is deposited on the interlayer insulating film 210 including the fuse lines FL.

Subsequently, although not illustrated, a repair trench is formed by etching a portion of the insulating layer 230, and then a fuse blowing process of cutting a specific fuse line FL by irradiating a laser to the repair trench may be performed. The inspection and repair process is carried out in sequence.

According to the present invention, since the barrier film formed between the interlayer insulating film and the fuse line serves to prevent cracks from being generated due to the energy applied during the fuse blowing process, it is possible to prevent the crack from propagating to the interlayer insulating film under the fuse line. Through this, the device characteristics and reliability can be improved.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

As described above, according to the present invention, by forming a barrier film at an interface between the interlayer insulating film and the fuse line, it is possible to prevent the occurrence of cracks around the fuse line during the fuse blowing process.

In addition, the present invention can improve device characteristics and reliability by suppressing propagation of the cracks into the interlayer insulating film under the fuse line.

Claims (11)

A plurality of fuse lines formed in a fuse area of the semiconductor substrate, Wherein each fuse line has a barrier layer for blocking crack propagation to a lower interlayer insulating layer during a fuse blowing process. The method of claim 1, The fuse line is a fuse of the semiconductor device, characterized in that formed to fill the groove provided in the interlayer insulating film. The method of claim 1, And the barrier film is formed at an interface between the fuse line and the interlayer insulating film. The method of claim 1, The barrier film is a fuse of a semiconductor device, characterized in that the laminated film structure of the nitride film and the oxide film. The method of claim 1, The barrier film has a fuse of at least two semiconductor layers characterized in that the structure. The method of claim 1, The fuse line is a fuse of a semiconductor device, characterized in that made of a metal film, or a polysilicon film. Forming an interlayer insulating film having a plurality of grooves in a fuse area of the semiconductor substrate; Forming a barrier film on the interlayer insulating film including the surface of the groove; Depositing a conductive film for a fuse line to fill the groove on the barrier film; And Removing the conductive layer and the barrier layer until the upper portion of the interlayer insulating layer is exposed; A fuse forming method of a semiconductor device comprising a. The method of claim 7, wherein The barrier film is a fuse forming method of a semiconductor device, characterized in that formed in a laminated film structure of a nitride film and an oxide film. The method of claim 7, wherein The barrier film is a fuse forming method of the semiconductor device, characterized in that formed in at least two multi-layer structure. The method of claim 7, wherein The fuse line conductive film is a metal film or a polysilicon film is deposited, the fuse forming method of a semiconductor device. The method of claim 7, wherein And removing the conductive layer and the barrier layer by an etch back process.

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