KR20080109564A - Apparatus of cleaning the photomask and the method for cleaning photomask using the same - Google Patents

Apparatus of cleaning the photomask and the method for cleaning photomask using the same Download PDF

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Publication number
KR20080109564A
KR20080109564A KR1020070058036A KR20070058036A KR20080109564A KR 20080109564 A KR20080109564 A KR 20080109564A KR 1020070058036 A KR1020070058036 A KR 1020070058036A KR 20070058036 A KR20070058036 A KR 20070058036A KR 20080109564 A KR20080109564 A KR 20080109564A
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KR
South Korea
Prior art keywords
cleaning
chamber
ultra
photomask
ultraviolet
Prior art date
Application number
KR1020070058036A
Other languages
Korean (ko)
Inventor
정수경
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070058036A priority Critical patent/KR20080109564A/en
Publication of KR20080109564A publication Critical patent/KR20080109564A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The cleaning apparatus of the photomask of this invention is the cleaning chamber which mounts a photomask; An ultra-ultraviolet chamber disposed so as to correspond to the cleaning chamber, and having an ultra-ultraviolet lamp mounted on an inner upper portion thereof, the ultra-ultraviolet chamber including a window opened in one direction when irradiating the ultra-violet ray to the photomask; A chamber housing connecting the cleaning chamber and the ultra-ultraviolet chamber to block the inside and the outside of the cleaning process; And a support for supporting the cleaning chamber and the ultra-ultraviolet chamber to be fixed to each other.

Description

Apparatus of cleaning the photomask and the method for cleaning photomask using the same}

1 and 2 are views illustrating a cleaning apparatus of a photomask and a cleaning method using the same according to the present invention.

The present invention relates to a photomask, and more particularly, to a cleaning apparatus for a photomask and a cleaning method using the same.

Recently, as the degree of integration of semiconductor devices increases, patterns formed on photomasks have also been highly integrated. Accordingly, the conditions for defects such as impurities generated in the process of manufacturing the photomask are becoming strict. Contaminants generated on the photomask can be divided into particles, organic contaminants, photoresist residues and the like. As such, if impurities and contaminants generated in the process of manufacturing the photomask are not properly removed, the yield and reliability of the product may be greatly affected. Therefore, the importance of the cleaning process for removing impurities and contaminants is increasing. In order to effectively remove such impurities and contaminants, wet cleaning is generally performed using a chemical solution mixed with various cleaning solutions. Wet cleaning proceeds by dipping the photomask in a chemical solution or by spraying the chemical solution onto the photomask. This wet cleaning uses a chemical solution containing sulfuric acid or ammonia. However, if the use conditions such as sulfuric acid or ammonia in the chemical solution are enhanced to remove impurities and contaminants generated on the photomask, damage may occur to the surface of the photomask. In addition, the wet cleaning may be difficult to prevent haze defects, a phenomenon in which the surface of the photomask is clouded in a subsequent exposure process. Accordingly, there is a need for a cleaning method that can effectively remove organic substances and other contaminants from chemical defects that may occur during photomask fabrication.

It is an object of the present invention to provide a cleaning apparatus for a photomask and a cleaning method using the same, which can control organic materials and other contaminants without using a chemical solution that can reduce the characteristics of the photomask.

In order to achieve the above technical problem, the cleaning apparatus of the photomask according to the present invention, the cleaning chamber for placing the photomask; An ultra-ultraviolet chamber disposed to correspond to the cleaning chamber and including a window opened in one direction when the ultra-ultraviolet lamp is mounted on an inner upper portion of the photomask and irradiated with ultra-violet ray; A chamber housing connecting the cleaning chamber and the ultra-ultraviolet chamber to block the inside and the outside of the cleaning process; And it characterized in that it comprises a support for supporting the cleaning chamber and the ultra-ultraviolet chamber is fixed to each other.

In the present invention, the cleaning chamber, the mask loading chuck in which the photomask is placed; A first supply part supplying hydrogen peroxide (H 2 O 2 ) into the chamber housing; A second supply unit supplying dehydrogenate water into the chamber housing; And a discharge part for discharging the cleaning residue generated in the cleaning chamber to the outside.

The ultra-ultraviolet chamber may include: an upper cover capable of adjusting a height while the ultra-ultraviolet lamp is disposed; A lower cover disposed to correspond to the upper cover; And a radiance window disposed on an upper side of the lower cover to block direct contact between the ultra-ultraviolet lamp and the photomask.

In order to achieve the above technical problem, the cleaning method of the photomask according to the present invention, performing the cleaning to remove the organic contaminants using OH radicals formed by supplying ultra-violet and hydrogen peroxide on the photomask on which organic contaminants are generated. Characterized in that.

In the present invention, it is preferable that the ultra-ultraviolet and hydrogen peroxide proceed in-situ.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity.

1 and 2 are views illustrating a cleaning apparatus of a photomask and a cleaning method using the same according to the present invention.

1 and 2, the cleaning apparatus of the photomask according to the present invention is disposed so as to correspond to the cleaning chamber 100 in which the photomask M is placed, and the cleaning chamber 100. Ultraviolet lamp (115) is mounted on the upper portion of the photomask (M) when irradiating ultra violet (Ultra Violet), including a window (window, 125, see Fig. 2) opened in one direction Ultra violet chamber (140), the chamber housing (chamber housing, 135) and the cleaning chamber 100 to block the inside and the outside of the cleaning proceeds while connecting the cleaning chamber 100 and the ultra-ultraviolet chamber 140 ) And the ultra-ultraviolet chamber 140 is configured to include a support 130 to be fixed to each other.

The cleaning chamber 100 may include a mask loading chuck 105 on which the photomask M is placed, and a first supply unit 160 supplying hydrogen peroxide (H 2 O 2 ) into the chamber housing 135. And a second supply unit 170 for supplying dehydrogenate water into the chamber housing 135 and a discharge unit 180 for discharging the cleaning residue generated after the reaction in the cleaning chamber 100 to the outside. It is made to include. In addition, the ultra-ultraviolet chamber 140 is disposed so as to correspond to the upper cover 110 and the upper cover 110 which are capable of height adjustment in the photomask M direction while the ultra-ultraviolet lamp 115 is disposed. The lower cover 120 and the lower cover 120 is disposed on the upper side of the UV lamp 115 and the photomask (M) is a further comprises a radiance window (radiance window, 130) for blocking direct contact.

In the cleaning process using the cleaning device configured as described above, first, the photomask M in which organic contaminants and foreign substances are generated in the photomask manufacturing process is loaded onto the mask loading chuck 105 in the cleaning chamber 100. The photomask M disposed on the mask loading chuck 105 is blocked from the outside by the chamber housing 135 which blocks the inside and outside of the cleaning process. The chamber housing 135 connects the cleaning chamber 100 and the ultra-ultraviolet chamber 140, and serves as a process vessel in which cleaning is performed.

Next, hydrogen peroxide (H 2 O 2 ) of an appropriate concentration is supplied from the first supply unit 160 into the chamber housing 135 of the cleaning chamber 100, and dehydrogenated water from the second supply unit 170 into the chamber housing 135. (DIW; Dehydrogenate water).

While supplying hydrogen peroxide (H 2 O 2 ) and dehydrogenated water (DIW) into the chamber housing 135, the ultra-ultraviolet lamp 115 disposed on the upper cover 110 of the ultra-ultraviolet chamber 140 is turned on. Ultraviolet (UV) light is irradiated onto the photomask M disposed on the mask loading chuck 105. As shown in FIG. 2, the ultra-UV light is irradiated onto the photomask while the window 125 disposed in the lower cover 120 is opened in one direction. Here, the blocking area b becomes the exposed area a by the window 125. At this time, by adjusting the position of the height controllable upper cover 110 to contact the ultra-violet lamp 115 disposed in the chamber housing 135 of the cleaning chamber 100 and the upper cover 110, ultra-ultraviolet ( UV) and hydrogen peroxide (H 2 O 2 ) are allowed to occur simultaneously. Meanwhile, the radiance window 130 disposed on the lower cover 120 prevents the ultra-ultraviolet lamp 115 and the photomask M from directly contacting each other. At this time, while supplying hydrogen peroxide and dehydrogenated water on the photomask (M), the process of irradiating ultra-ultraviolet (UV) light is in-situ.

Then, as the chemical reaction and decomposition are repeatedly performed between the hydrogen peroxide and the dehydrogenated water supplied into the chamber housing 135, radicals OH including oxygen (O) are generated. The radical (OH) thus generated acts as an oxidant to oxidize organic contaminants generated on the surface of the photomask (M). At this time, the ultra-ultraviolet (UV) irradiated to the photomask (M) increases the production of radicals (OH) containing oxygen to increase the oxidation power. The organic contaminants oxidized by the radical OH are removed from the photomask M, and the organic contaminants removed from the photomask M are discharged to the outside through the discharge unit 180. At this time, the residue after washing is not a hazardous waste and can be easily processed.

In the cleaning apparatus and the cleaning method using the same according to the present invention, the cleaning chamber and the ultra-ultraviolet chamber are placed on a vertical line to be integrated so that each can be used according to a need. As a result, it is possible to prevent the generation of haze defects, which are fatal defects of the mask caused by using a conventional chemical solution. In addition, it is possible to maximize the generation of OH radicals having a large oxidizing power only by the reaction of ultra-ultraviolet (UV) and hydrogen peroxide (H 2 O 2 ), it is possible to efficiently control organic matter and other foreign substances generated in the mask manufacturing process. In addition, the residue after washing is not a hazardous waste produced by the reaction with the chemical solution, so the part for the treatment thereof is also easy.

As described above, according to the cleaning apparatus of the photomask and the cleaning method using the same according to the present invention, by connecting the cleaning chamber and the ultra-ultraviolet chamber with one cleaning apparatus, organic matter and other foreign substances generated in the mask fabrication process are OH radicals. Can be controlled efficiently. It is possible to prevent haze defects from occurring on the photomask by controlling the organic material using OH radicals.

Claims (5)

A cleaning chamber in which the photomask is placed; An ultra-ultraviolet chamber disposed to correspond to the cleaning chamber, and having an ultra-ultraviolet lamp mounted on an inner upper portion thereof, the ultra-ultraviolet chamber including a window opened in one direction when irradiating the ultra-violet ray to the photomask; A chamber housing connecting the cleaning chamber and the ultra-ultraviolet chamber to block the inside and the outside of the cleaning process; And And a support for supporting the cleaning chamber and the ultra-ultraviolet chamber to be fixed to each other. The method of claim 1, wherein the cleaning chamber, A mask loading chuck on which the photomask is placed; A first supply part supplying hydrogen peroxide (H 2 O 2 ) into the chamber housing; A second supply unit supplying dehydrogenate water into the chamber housing; And And a discharge unit for discharging the cleaning residues generated in the cleaning chamber to the outside. According to claim 1, wherein the ultra-ultraviolet chamber, An upper cover capable of adjusting a height while the ultra-ultraviolet lamp is disposed; A lower cover disposed to correspond to the upper cover; And The apparatus of claim 1, further comprising a radiance window disposed above the lower cover to block direct contact between the ultra-ultraviolet lamp and the photomask. The cleaning method of the photomask, characterized in that for performing the cleaning to remove the organic contaminants using OH radicals formed by supplying ultra-violet and hydrogen peroxide on the photomask on which the organic contaminants are generated. The method of claim 4, wherein The ultra-ultraviolet and hydrogen peroxide cleaning method of the photomask, characterized in that proceed in-situ (in-situ).
KR1020070058036A 2007-06-13 2007-06-13 Apparatus of cleaning the photomask and the method for cleaning photomask using the same KR20080109564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070058036A KR20080109564A (en) 2007-06-13 2007-06-13 Apparatus of cleaning the photomask and the method for cleaning photomask using the same

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Application Number Priority Date Filing Date Title
KR1020070058036A KR20080109564A (en) 2007-06-13 2007-06-13 Apparatus of cleaning the photomask and the method for cleaning photomask using the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017163143A (en) * 2016-03-09 2017-09-14 東京エレクトロン株式会社 System and method for vapor phase hydroxyl radical processing of substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017163143A (en) * 2016-03-09 2017-09-14 東京エレクトロン株式会社 System and method for vapor phase hydroxyl radical processing of substrate

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