KR20080084489A - Organic light emitting diode and method for fabricating the same - Google Patents

Abstract

An organic light emitting device and a method for fabricating the same are provided to suppress failure of the device remarkably by preventing penetration of moisture into the device through a dam structure between a seal pattern and a pixel region. An organic light emitting device includes first and second substrates(101,141) where a plurality of pixel units are defined. A thin film transistor is formed in a pixel region of the first substrate and composed of a gate electrode, an active layer, and source/drain electrodes. A connection line is connected to the drain electrode. An organic light emitting diode is formed on the second substrate to be electrically connected to the connection line. A seal pattern(131) is formed between the first and second substrates. A dam structure(160) is formed between the seal pattern and the pixel region to be in contact with the first and second substrates.

Description

Organic electroluminescent device and its manufacturing method {ORGANIC LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME}

1 is a plan view showing a seal pattern formed on a lower substrate of an active matrix type organic light emitting display device according to the related art and a pixel region provided inside the seal pattern.

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and is a cross-sectional view of an active matrix organic light emitting display device according to the prior art.

3 is a cross-sectional view of an active matrix organic light emitting display device according to the prior art, and is an enlarged cross-sectional view of part "A" of FIG.

FIG. 4 is an enlarged cross-sectional view of part “B” of FIG. 2, illustrating a case in which moisture, gas or the like penetrates into the seal pattern. FIG.

FIG. 5 is a plan view illustrating a seal pattern formed on a lower substrate of an active matrix type organic light emitting display device and a pixel region provided in a seal pattern according to an embodiment of the present invention; FIG.

FIG. 6 is an enlarged cross-sectional view taken along line VI-VI of FIG. 5, and is a cross-sectional view of an active matrix organic light emitting display device according to the present invention;

FIG. 7 is a cross-sectional view of an active matrix organic light emitting display device according to one embodiment of the present invention, and is an enlarged cross-sectional view of the portion “C” of FIG. 6.

FIG. 8 is an enlarged cross-sectional view of a portion “D” of FIG. 6, illustrating a case in which moisture, gas, and the like penetrate into the seal pattern. FIG.

9 is a cross-sectional view of an active matrix organic light emitting display device according to another embodiment of the present invention.

10 is a cross-sectional view of an active matrix type organic light emitting display device according to another embodiment of the present invention, and an enlarged cross-sectional view of part “E” of FIG. 9.

FIG. 11 is an enlarged cross-sectional view of a portion “F” in FIG. 9, showing a case in which moisture, gas or the like penetrates into the seal pattern. FIG.

12A and 12B are cross-sectional views illustrating a seal pattern and a dam structure of an active matrix type organic light emitting display device according to still another embodiment, and FIGS. 12A and 12B illustrate a dam structure on a top plate. Sectional drawing which shows the case where the support pattern was formed.

13A and 13B are cross-sectional views illustrating a seal pattern and a dam structure of an active matrix organic light emitting display device according to still another embodiment, and FIGS. 13A and 13B illustrate a dam structure on a lower plate. Sectional drawing which shows the case where the support pattern was formed.

-Code description of main parts of drawing-

101: first substrate 103: gate electrode

105 gate insulating film 107 active layer 109 ohmic contact layer 111 source electrode 113 drain electrode 115 interlayer insulating film 117 contact spacer 119 connection wiring 131 seal pattern 141 second substrate 143 auxiliary electrode 145 first electrode

147 insulating film pattern 149 partition wall

151: contact pattern 153: organic light emitting layer

155: second electrode

The present invention relates to an organic light emitting device (OLED), and more particularly to an organic light emitting device having a dam structure sealed inside the seal pattern and a method of manufacturing the same.

Organic Light Emitting Device (OLED), one of the new flat panel displays (FPD), is self-luminous, so it has better viewing angle, contrast, etc. than LCD, and does not require backlight. It can be used as a small size flat panel display device because of its light weight and thinness, which is advantageous in terms of power consumption, and particularly inexpensive in terms of manufacturing cost.

The conventional organic light emitting display device will be described with reference to FIGS. 1 to 4 as follows.

1 is a plan view illustrating a seal pattern formed on a lower substrate of an active matrix type organic light emitting display device according to the related art and a pixel region provided in a seal pattern.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1 and is a cross-sectional view of an active matrix organic light emitting display device according to the prior art.

FIG. 3 is a cross-sectional view of an active matrix organic light emitting display device according to the prior art, and is an enlarged cross-sectional view of part “A” of FIG. 2.

FIG. 4 is an enlarged cross-sectional view of the portion “B” of FIG. 2 and is a schematic view showing a case where moisture, gas, or the like penetrates into the seal pattern.

1 and 2, in the organic light emitting diode according to the related art, a first substrate 11 and a second substrate 41 are disposed to face each other, and the first and second substrates 11 and 41 are disposed. It is sealed by the seal pattern 31 formed in the edge part of the.

In addition, an array element is formed in each subpixel on the first substrate 11, and an organic light emitting diode (OLED) corresponding to each subpixel of the first substrate 11 is formed on the second substrate 41. Not shown) is formed.

3, an array element T formed for each subpixel on the first substrate 11 may include a gate electrode 13, an active layer 17 formed on the gate electrode 13, and an ohmic. The contact layer 19 and the source / drain electrodes 21 and 23 are formed, and the drain electrode 23 is independently connected to each subpixel under the organic light emitting diode (not shown) by a connection wiring 27. It is electrically connected to the formed second electrode 55.

In addition, an auxiliary electrode 43 is formed on the second substrate 41 at a predetermined interval, and the second substrate 41 including the auxiliary electrode 43 forms an organic light emitting diode (not shown). The first electrode 45 used as the common electrode is formed.

The insulating layer pattern 47 is formed on the first electrode 45 at a predetermined interval, and the contact spacer 49 and the tapered partition wall 51 are adjacent to each other on the insulating layer pattern 47. It is.

In addition, the organic light emitting layer 53 and the second electrode 55 are stacked on the first electrode 45 including the contact spacer 49 and the partition wall 51. In this case, portions of the organic light emitting layer 53 and the second electrode 55 formed on the first electrode 45 are used as organic light emitting diodes (not shown).

In this case, since the organic light emitting layer 51 and the second electrode 55 are not formed on the surface of the insulating layer pattern 47 positioned between the contact spacer 49 and the partition wall 51, adjacent subpixels are independently formed. Will be separated.

The sidewalls of the barrier ribs 51 are tapered so that the organic light emitting layer 51 and the second electrode 55 are formed on the upper side of the wide barrier ribs, but the insulating layer pattern is disposed on the lower side of the barrier ribs 51. In the 47) portion, the deposition of the film is prevented by the upper side of the partition 51, which makes it difficult to form the film.

Thus, in the state where the TFT array element and the light emitting element array are formed on the first substrate 11 and the second substrate 41, the contact spacer 49 and the first substrate 11 of the second substrate 41 are formed. An organic light emitting display device is formed by bonding the seal pattern 31 formed on the first substrate 11 to make physical contact with the drain electrode 23 of the TFT array device.

According to the organic light emitting device according to the prior art and the manufacturing method thereof according to the prior art configured as described above has the following problems.

In the conventional case, as illustrated in FIG. 4, moisture 61 is transferred from the outside through an interface between the second substrate 41 facing the first substrate 11 and the seal pattern 31 used to bond the substrates. ) Will penetrate. That is, a sealant constituting the seal pattern serves to bond the upper and lower plates and block water and gas from being injected from the outside.

However, the existing sealant has a decrease in adhesion and blocking ability, and the external moisture or gas is injected into the interior, which causes the light emitting organic material to deteriorate and the internal pressure increases, making physical contact difficult. .

Therefore, in the organic light emitting diode according to the related art, since the seal pattern and the second substrate are not formed in addition to the seal pattern formed on the edge portion of the first substrate for bonding the first substrate and the second substrate to each other. Moisture or the like penetrates into the device through the boundary of and may affect each subpixel, resulting in a defect in the entire device.

Accordingly, the present invention has been made to solve the above problems of the prior art, an object of the present invention is to improve the external moisture permeation resistance into the organic light emitting device, and the organic light emitting device that can improve the vacuum storage capacity And to provide a method for producing the same.

In addition, another object of the present invention is to provide a sealed dam structure inside the seal pattern formed between the first substrate and the second substrate to be bonded to each other, thereby improving the contact support force of the contact spacers and driving the organic light emitting diode. The present invention provides an organic light emitting display device and a method of manufacturing the same, which can further improve driving reliability of a TFT.

In addition, another object of the present invention is to use a plurality of dam (dam) structure, the organic electroluminescent device which can improve the sealing effect of the first substrate and the second substrate by the redundant shielding function and its manufacture In providing a method.

According to an embodiment of the present invention, an organic light emitting display device includes: a first substrate and a second substrate on which a plurality of pixel units are defined; A thin film transistor formed in the pixel region of the first substrate and composed of a gate electrode, an active layer, and a source / drain electrode; A connection wiring connected to the drain electrode; An organic light emitting diode formed on the second substrate and electrically connected to the connection wiring; A seal pattern formed between the first substrate and the second substrate; And a dam structure disposed between the seal pattern and the pixel region to contact the first substrate and the second substrate.

According to an embodiment of the present invention, an organic light emitting display device includes: a first substrate and a second substrate on which a plurality of pixel units are defined; A thin film transistor formed in the pixel region of the first substrate and composed of a gate electrode, an active layer, and a source / drain electrode; An interlayer insulating film formed on the thin film transistor and having a contact hole exposing the drain electrode; A contact spacer formed on the interlayer insulating film; A connection wiring formed on the contact spacer and the interlayer insulating layer and connected to the drain electrode through the contact hole; An organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode formed on the second substrate; A seal pattern formed between the first substrate and the second substrate; And a dam structure comprising a support pattern and a contact pattern formed on the first substrate and the second substrate, respectively, positioned between the seal pattern and the pixel region.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: providing a first substrate and a second substrate, the plurality of pixel parts being arranged spaced apart from each other; Forming a thin film transistor including a gate electrode, an active layer, and a source / drain electrode in a pixel area of the first substrate; Forming a connection wiring connected to the drain electrode; Forming an organic light emitting diode connected to the connection wiring on the second substrate; Forming a dam structure in which a first substrate and a second substrate are in contact with an outer portion of the pixel area defined in the first substrate and the second substrate; And forming a seal pattern on the periphery of the first substrate and the second substrate.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: providing a first substrate and a second substrate, the plurality of pixel parts being arranged spaced apart from each other; Forming a thin film transistor including a gate electrode, an active layer, and a source / drain electrode in the pixel region of the first substrate; Forming an interlayer insulating film having a contact hole exposing the drain electrode on the thin film transistor; Forming a contact spacer on the interlayer insulating film; Forming a connection wiring on the contact spacer and the interlayer insulating layer to be connected to the drain electrode through the contact hole; Forming an organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode on the second substrate; Forming a dam structure including a support pattern and a contact pattern at an outer portion of the pixel region of the first substrate and the second substrate; And forming a seal pattern on outer peripheries of the first substrate and the second substrate.

Hereinafter, an organic light emitting display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

5 is a plan view illustrating a seal pattern formed on a lower substrate of an active matrix type organic light emitting display device and a pixel region provided in a seal pattern according to an embodiment of the present invention.

FIG. 6 is an enlarged cross-sectional view taken along line VI-VI of FIG. 5 and is a cross-sectional view of an active matrix organic light emitting display device according to the present invention.

FIG. 7 is a cross-sectional view of an active matrix organic light emitting display device according to one embodiment of the present invention, and is an enlarged cross-sectional view of the portion “C” of FIG. 6.

FIG. 8 is an enlarged cross-sectional view of the portion “D” of FIG. 6 and is a schematic view showing a case where moisture, gas, or the like penetrates into the seal pattern.

5, 6, and 7, in an organic light emitting display device according to an embodiment of the present invention, a first substrate 101 and a second substrate 141 are disposed to face each other, and the first, 2 is sealed by a seal pattern 131 formed at an edge portion of the substrates 101 and 141, and a dam having a sealed shape is formed in the first and second substrates 101 and 141 located inside the seal pattern 131. dam) structure 160 is formed.

Here, an array element is formed for each subpixel on the first substrate 101, and an organic light emitting diode is disposed under the second substrate 141 in correspondence with each subpixel of the first substrate 101. A diode (not shown) is formed.

The array element T formed on each of the sub-pixels on the first substrate 101 includes a gate electrode 103, an active layer 107, an ohmic contact layer 109, and a source formed on the gate electrode 103. And the drain electrodes 111 and 113, and the drain electrode 113 is electrically connected to the organic light emitting diode (not shown) independently formed for each sub pixel by the connection wiring 117.

In addition, a contact spacer 119 in contact with the organic light emitting diode (not shown) is formed on the connection wire 117 electrically connected to the drain electrode 113.

A pair of support patterns 121a and 121b constituting the dam structure 160 are formed on the first substrate 101 positioned inside the seal pattern 131. In this case, the contact spacers 119 are formed to correspond to the connection wirings 119 positioned in each subpixel.

In addition, the support patterns 121a and 121b are formed to be spaced apart by a predetermined interval and have a tapered shape. In particular, the support patterns 121a and 121b have an upper width that is narrower than a lower width. The support patterns 121a and 121b are formed in a hermetic structure along the outer portion of the first substrate 101.

Therefore, the width of the space portion 123 formed by the pair of support patterns 121a and 121b is narrower toward the lower side.

On the other hand, the auxiliary electrode 143 is formed on the second substrate 141 at a predetermined interval, and the second substrate 141 including the auxiliary electrode 143 forms an organic light emitting diode (not shown). The first electrode 145 used as the common electrode is formed.

An insulating film pattern 147 is formed on the first electrode 145 at a predetermined interval, and a tapered partition wall 149 is formed adjacent to each other on the insulating film pattern 147. In this case, the partition 149 functions to separate each subpixel.

In addition, the contact pattern 155 at the position of the second substrate 141 corresponding to the space 123 between the support patterns 121a and 121b constituting the dam structure 160 formed on the first substrate 101. Is formed. In this case, the contact pattern 155 is formed in a hermetic structure along the outer portion of the second substrate 141.

The organic light emitting layer 151 and the second electrode 153 are stacked on the insulating layer pattern 147 including the partition wall 149 and the first electrode 145.

In this case, portions of the organic light emitting layer 151 and the second electrode 153 formed on the first electrode 145 are used as organic light emitting diodes (not shown).

In addition, the organic light emitting layer 151 and the second electrode 153 formed on each of the insulating layer pattern 147 including the first electrode 145 and the partition 149 are separated from each other, so that the subs are formed on both sides of the partition 149. Each pixel is separated independently.

The sidewalls of the barrier ribs 149 are tapered, so that the organic light emitting layer 151 and the second electrode 153 are formed on the upper side of the wide barrier ribs 149, but the lower side surface portions of the barrier ribs 149 are narrow. This is because the deposition of the film is prevented in the portion of the insulating film pattern 147 positioned below the barrier rib 149, which makes it difficult to form the film.

Thus, the space portion 123 between the support patterns 121a and 121b of the first substrate 101 with the TFT array element and the light emitting element array formed on the first substrate 101 and the second substrate 141, respectively. Contact pattern 155 of the second substrate 141 is inserted into the first substrate 101 and the second substrate by the seal pattern 131 formed on the first substrate 101 while making physical contact. The plate 141 is bonded to form an organic light emitting display device.

Therefore, as shown in FIG. 8, the water 161 or the like is externally connected through the interface between the second substrate 141 facing the first substrate 101 and the seal pattern 131 used to bond the substrates. This will penetrate.

However, the dam structure 160 positioned inside the seal pattern 131, that is, the pair of support patterns 121a and 121b formed on the first substrate 101 and the contact pattern 155 formed on the second substrate 141. Moisture (161), gas or the like penetrated from the outside by the adhesion of the will no longer penetrate into the organic light emitting device.

Referring to the accompanying drawings, a process of forming a thin film transistor array unit of an organic light emitting display device according to an embodiment of the present invention having such a configuration will be described below.

FIG. 6 is an enlarged cross-sectional view taken along line VI-VI of FIG. 5 and is a cross-sectional view of an active matrix organic light emitting display device according to the present invention.

FIG. 7 is a cross-sectional view of an active matrix organic light emitting display device according to the present invention, and is an enlarged cross-sectional view of part “C” of FIG. 6.

FIG. 8 is an enlarged cross-sectional view of the portion “D” of FIG. 6 and is a schematic view showing a case where moisture, gas, or the like penetrates into the seal pattern.

6 and 7, a metal material is deposited on the entire surface of the first substrate 101 on which the light emitting area, the driving area, and the storage area are defined, and then selectively patterned to form the gate electrode 103.

In this case, the metal material may be selected from a group of conductive metals including aluminum, aluminum alloys, copper, tungsten, tantalum, and molybdenum.

Next, the gate insulating layer 105 is formed on the first substrate 101 including the gate electrode 103 by using one of a group of inorganic insulating materials including silicon nitride (SiNx) and silicon oxide (SiO ₂ ).

Subsequently, after depositing amorphous silicon (a-Si: H) on the gate insulating layer 105, a dehydrogenation process and a crystallization process using heat are performed to form a polysilicon layer and pattern the polysilicon layer. The active layer 107 is formed in the area.

In addition, an amorphous silicon layer doped with an impurity is formed on the active layer and used as an ohmic contact layer 109 of the thin film transistor. In this case, the doped amorphous silicon layer is selectively removed during patterning of the metal material layer deposited in a subsequent process to expose the channel region of the active layer.

Next, a metal material is deposited on the entire surface of the first substrate 101 including the ohmic contact layer 109 and the active layer 107, and then selectively patterned to form source / drain electrodes 111 and 113.

In this case, one selected from the group of conductive metals including chromium, molybdenum, tantalum, tungsten, etc. may be used as the metal material.

Subsequently, an interlayer insulating film 115 including an inorganic insulating material or an organic insulating material including silicon nitride (SiNx) and silicon oxide (SiO ₂ ) over the first substrate 101 including the source / drain electrodes 111 and 113. E).

Next, after the photosensitive resin is coated on the interlayer insulating film 115, the photosensitive resin layer is subjected to an exposure and development process using a photolithography process technology to selectively remove the photosensitive resin layer to form a mask pattern (not shown).

Next, a drain contact hole (not shown) exposing a portion of the drain electrode 113 is formed by selectively removing the interlayer insulating layer 115 by blocking the mask pattern (not shown).

Next, after removing the mask pattern (not shown), a negative photosensitive resin layer (not shown) is coated on the entire surface of the interlayer insulating film 115. In this case, the photosensitive resin layer uses a negative photosensitive resin, and instead of the negative photosensitive resin, a positive photosensitive resin may be used as necessary.

Subsequently, the negative photosensitive resin layer (not shown) is selectively removed by an exposure and development process using a photolithography process technology to form the photosensitive resin layer pattern 117.

In this case, at least one photosensitive resin layer pattern 117 is provided for each subpixel and used as a contact spacer. In addition, the photosensitive resin layer pattern 117 has a negative characteristic, that is, when the ultraviolet light is irradiated, the portion to which the light is irradiated remains and the portion to which the light is not irradiated is removed.

In addition, when the photosensitive resin layer pattern, that is, the contact spacer 117 is formed, a pair of support patterns 121a which form the dam structure 160 in the edge portion of the first substrate 101, that is, the region except the pixel region, is formed. 121b) is also formed. In this case, the support patterns 121a and 121b have a sealed structure at the outer periphery of the pixel region of the first substrate 101, and the support patterns 121a and 121b are formed on the second substrate 241 which will be described later. The space part 123 is provided so that the contact pattern 155 formed may be fitted. At this time, the space portion 123 is formed narrower toward the lower side.

Next, a conductive metal is deposited on the entire surface of the interlayer insulating layer 115 including the contact spacer 117 and selectively removed to form a connection wiring 119 connected to the pixel portion while being in contact with the drain electrode. In this case, one selected from the group of conductive metals including chromium, molybdenum, tantalum, tungsten, etc. may be used as the conductive metal material.

In this way, a process of forming a dam structure 160 on the first substrate 101 together with the array element portion of the thin film transistor in the edge portion of the first substrate 101, that is, the region excluding the pixel region, is performed. To complete.

Meanwhile, a process of forming the organic light emitting part formed on the second substrate bonded to the first substrate on which the array element part of the thin film transistor according to the present invention will be described will be described below.

FIG. 6 is an enlarged cross-sectional view taken along line VI-VI of FIG. 5 and is a cross-sectional view of an active matrix organic light emitting display device according to the present invention.

FIG. 7 is a cross-sectional view of an active matrix organic light emitting display device according to the present invention, and is an enlarged cross-sectional view of part “C” of FIG. 6.

FIG. 8 is an enlarged cross-sectional view of the portion “D” of FIG. 6 and is a schematic view showing a case where moisture, gas, or the like penetrates into the seal pattern.

6 and 7, a low resistance metal is deposited on the transparent second substrate 141 and patterned to form the auxiliary electrode 143 described above.

In this case, the auxiliary electrode 143 may be any metal that is lower than the resistance of the first electrode 145 to be formed later. For example, the material forming the first electrode (not shown) may be indium tin oxide (ITO). If the auxiliary electrode 143, chromium (Cr), molybdenum (Mo), aluminum (Al), aluminum alloy (AlNd) and the like can be used.

In addition, since the auxiliary electrode 143 typically uses an opaque metal, it is preferable to form the auxiliary electrode 143 corresponding to an area not used as a display area.

Next, a transparent material is deposited on the entire surface of the second substrate 141 on which the auxiliary electrode 143 is formed to form the first electrode 145.

In this case, the first electrode 145 is a hole injection electrode for injecting holes into the organic light emitting layer 151 formed in a subsequent process. The first electrode 145 is mainly transparent and has a high work function. It is formed by depositing indium tin oxide (ITO).

Subsequently, an insulating film (not shown) is formed on the first electrode 145 by using an organic insulating material or an inorganic insulating material.

Next, the insulating film (not shown) is selectively patterned to form an insulating film pattern 147 spaced apart from each other at a predetermined interval.

Subsequently, after the photosensitive resin layer (not shown) is formed on the entire surface of the second substrate 141 including the insulating layer pattern 147, the barrier layer 149 is formed on the insulating layer pattern 147 by selectively patterning the photosensitive resin layer. A contact pattern 151 is formed in contact with the pair of support patterns 121a and 121b formed on the first substrate 101 at the edge portion of the second substrate 141, that is, in an area excluding the pixel area.

In this case, the contact pattern 155 may be formed in an airtight structure at an outer portion of the second substrate 141 and may be formed together or later formed when the partition wall 149 is formed.

In addition, the contact pattern 155 forms a dam structure 160 together with a pair of support patterns 121a and 121b formed on the first substrate 101.

The photosensitive resin layer constituting the barrier rib 149 and the contact pattern 155 has a negative characteristic, that is, when the ultraviolet light is irradiated, the portion where the light is irradiated remains and the portion where the light is not irradiated is removed. Has the nature.

 Next, an organic light emitting layer 151 is disposed on the entire surface of the second substrate 141 including the partition 149 and corresponds to each pixel area, and emits red (R), green (G), and blue (B) light. Form.

In this case, the organic light emitting layer 151 may be configured as a single layer or a multi-layer, in the case of a multi-layer of the organic film, although not shown in the figure, a hole transporting layer (hole transporting layer) (not shown) in the main light emitting layer (not shown) C) and an electron transporting layer (not shown).

Subsequently, a metal material is deposited on the entire surface of the first electrode 145 and the second substrate 141 including the organic light emitting layer 151 and patterned, thereby independently positioning the second electrode 153 corresponding to each pixel area. To form.

In this case, the metal material forming the second electrode 153 may be formed of any one selected from aluminum (Al), calcium (Ca), and magnesium (Mg) or a double metal layer of lithium fluorine / aluminum (LIF / Al). Can be formed.

In addition, the organic light emitting layer 151 and the second electrode 153 formed on each of the insulating layer pattern 147 including the first electrode 145 and the partition 149 are separated from each other, so that the subs are formed on both sides of the partition 149. Each pixel is separated independently.

The sidewalls of the barrier ribs 149 are tapered, so that the organic light emitting layer 151 and the second electrode 153 are formed on the upper side of the wide barrier ribs 149, but the lower side surface portions thereof are narrow. This is because film deposition is prevented in the portion of the insulating film pattern 147 disposed below by the upper side of the barrier rib 149, which makes it difficult to form the film.

Thus, the space portion 123 between the support patterns 121a and 121b of the first substrate 101 with the TFT array element and the light emitting element array formed on the first substrate 101 and the second substrate 141, respectively. The first substrate 101 and the second substrate by the seal pattern 131 formed on the first substrate 101 while the contact pattern 155 of the second substrate 141 is inserted into the physical substrate. 141 is bonded to form an organic light emitting display device.

Therefore, as shown in FIG. 8, even if moisture or the like from outside of the organic light emitting diode according to the present invention penetrates into the organic light emitting diode, the pair of support patterns 121a and 121b which are in contact with each other up and down. The dam structure 160 composed of the contact pattern 155 prevents water 161 or the like from penetrating into the organic light emitting device any more, thereby suppressing the defect of the element.

On the other hand, as another embodiment of the present invention, the organic electroluminescent device structure in which the support pattern constituting the dam structure is formed on the upper plate with reference to the accompanying drawings as follows.

9 is a cross-sectional view of an active matrix organic light emitting display device according to another embodiment of the present invention.

FIG. 10 is a cross-sectional view of an active matrix organic light emitting display device according to another embodiment of the present invention, and is an enlarged cross-sectional view of part “E” of FIG. 9.

FIG. 11 is an enlarged cross-sectional view of a portion “F” of FIG. 9 and is a schematic view showing a case in which moisture, gas or the like penetrates into the seal pattern.

Another embodiment of the present invention is a case where the configuration of the dam structure is the same as the embodiment of the present invention described above, but the formation position of the elements constituting the dam structure is changed, which will be described in detail below.

9, 10, and 11, in an organic light emitting display device according to another embodiment of the present invention, a first substrate 201 and a second substrate 241 are disposed to face each other, and the first, The first and second substrates 201 and 241 are sealed by the seal patterns 231 formed at the edges of the second substrates 201 and 241, and the dams are sealed in the first and second substrates 201 and 241 located inside the seal patterns 231. dam) structure 260 is formed.

Here, an array element is formed for each subpixel on an upper portion of the first substrate 201, and an organic light emitting display is disposed below the second substrate 241 in response to each subpixel of the first substrate 201. A diode (not shown) is formed.

An array element T formed on each of the sub-pixels on the first substrate 201 includes a gate electrode 203, an active layer 207, an ohmic contact layer 209, and a source / source formed on the gate electrode 203. The drain electrodes 213 and 213 are electrically connected to the organic light emitting diodes (not shown) formed independently of each subpixel by the connection wiring 217.

In addition, a contact pattern 221 constituting the dam structure 260 is formed on the first substrate 201 located inside the seal pattern 231.

The contact pattern 221 is formed inside the seal pattern 231 and has a tapered shape. In particular, the contact pattern 221 has an upper width smaller than the lower width, and is formed in a hermetic structure along the outer portion of the first substrate 201.

Meanwhile, an auxiliary electrode 243 is formed on the second substrate 241 at a predetermined interval, and an organic light emitting diode (not shown) is formed on the second substrate 241 including the auxiliary electrode 243. The first electrode 245 used as the common electrode is formed.

The insulating layer pattern 247 is formed on the second electrode 245 at a predetermined interval, and the contact spacer 249 and the tapered partition wall 251 are formed adjacent to each other on the insulating layer pattern 247. It is. In this case, the partition 251 functions to separate each subpixel.

In addition, a pair of support patterns 257a and 257b are formed on the outer portion of the second substrate 241 to contact the contact pattern 221 formed on the first substrate 201. A space portion 259 is provided between 257a and 257b so that the contact pattern 221 can be fitted. At this time, the space portion 259 is formed in a narrow width toward the lower side.

In addition, the support patterns 257a and 257b are formed in a hermetic structure along the outer portion of the second substrate 241.

The organic light emitting layer 253 and the second electrode 255 are stacked on the insulating layer pattern 247 including the barrier rib 251 and the contact spacer 249 and the first electrode 245.

In this case, portions of the organic light emitting layer 253 and the second electrode 255 formed on the first electrode 245 are used as organic light emitting diodes (not shown).

In addition, the organic light emitting layer 153 and the second electrode 155 formed on each of the insulating layer pattern 247 including the first electrode 245 and the partition 251 are separated from each other and are formed on both sides of the partition 251. Each subpixel is divided independently.

The sidewalls of the barrier ribs 251 are tapered, so that the organic light emitting layer 253 and the second electrode 255 are formed on the upper side of the wide barrier ribs 251, but the lower side surface portions of the barrier ribs 251 are narrow. This is because the deposition of the film is blocked by the upper side of the barrier rib 251 in the portion of the insulating film pattern 247 positioned below it, making it difficult to form the film.

Thus, the space portion 259 between the support patterns 257a and 257b of the second substrate 241 in a state where TFT array elements and light emitting element arrays are formed on the first substrate 201 and the second substrate 241, respectively. The first substrate 201 and the second substrate by the seal pattern 231 formed on the first substrate 201 while the contact pattern 221 of the first substrate 201 is inserted into the physical substrate. 241 is bonded to form an organic light emitting display device.

Therefore, as illustrated in FIG. 11, moisture 261 or the like is externally connected through the boundary surface of the second substrate 241 facing the first substrate 201 and the seal pattern 231 used to bond the substrates. This will penetrate.

However, the dam structure 260 located inside the seal pattern 231, that is, the contact pattern 221 formed on the first substrate 201 and the pair of support patterns 257a and 257b formed on the second substrate 241, respectively. Moisture 261, gas, or the like, penetrated from the outside by the contact of, no longer penetrates into the organic light emitting device.

In addition, as another embodiment according to the present invention, with reference to the accompanying drawings for the various embodiments of the dam structure provided inside the seal pattern in detail as follows.

12A and 12B are cross-sectional views illustrating a seal pattern and a dam structure of an active matrix type organic light emitting display device according to still another embodiment, and FIGS. 12A and 12B illustrate a dam structure on a top plate. It is sectional drawing which shows the case where the support pattern is formed.

13A and 13B are cross-sectional views illustrating a seal pattern and a dam structure of an active matrix organic light emitting display device according to still another embodiment, and FIGS. 13A and 13B illustrate a dam structure on a lower plate. It is sectional drawing which shows the case where the support pattern is formed.

Referring to FIG. 12A, in an organic light emitting display device according to another exemplary embodiment, a first substrate 301 and a second substrate 341 are disposed to face each other, and the first and second substrates 301 are disposed. And a dam structure having a sealed shape on the first and second substrates 301 and 341 located inside the seal pattern 331. 360a) is formed.

The dam structure 360a may include a contact pattern 321a formed on the first substrate 301 and a support pattern 357a formed on the second substrate 341 and in contact with a portion of the contact pattern 321a. It consists of. At this time, the contact portion 321a and the support pattern 357a are in contact with each other, the side portion or the upper surface.

Meanwhile, as another embodiment of the present invention, FIG. 12B includes the same dam structure 360b as that of FIG. 12A, that is, a contact pattern 321b and a contact pattern 357b, and only on the first substrate 301. The formed contact pattern 321b is formed on the second substrate 341 and is positioned between the contact pattern 321b and the seal pattern 331 to be in contact with a portion of the contact pattern 321b. It is composed. At this time, the contact portion 321b and the support pattern 357b are in contact with each other, the side portion or the upper surface.

Therefore, although not shown in the drawing, moisture or the like penetrates from the outside through the interface between the second substrate 341 facing the first substrate 301 and the seal pattern 331 used to bond the substrates. .

However, the dam structure 360b located inside the seal pattern 331, that is, the contact pattern 321b formed on the first substrate 301 and the support pattern 357b formed on the second substrate 341 are in contact with each other. Moisture, gas, and the like penetrated from the outside no longer penetrate into the organic light emitting device.

Meanwhile, referring to FIG. 13A, the organic light emitting diode according to another embodiment of the present invention includes a first substrate 401 and a second substrate 441 disposed to face each other, and the first and second substrates. The dams are sealed by the seal patterns 431 formed at the edges of the 401 and 441, and are sealed to the first and second substrates 401 and 441 located inside the seal patterns 431. The structure 460a is formed.

The dam structure 460a may include a support pattern 421a formed on the first substrate 401 and a contact pattern 457a formed on the second substrate 441 and in contact with a portion of the support pattern 421a. It consists of.

In addition, as another embodiment of the present invention, FIG. 13B is composed of the same dam structure 460b as that of FIG. 13A, that is, a support pattern 421b and a contact pattern 457b, and only the first substrate 401. The support pattern 421b formed on the second substrate 441 is disposed between the support pattern 421b and the seal pattern 431 to be in contact with a portion of the support pattern 421b. It consists of. In this case, the support pattern 421b and the contact pattern 457b are in contact with each other with side portions or upper surfaces that face each other.

Therefore, although not shown in the figure, moisture or the like penetrates from the outside through the interface between the second substrate 441 facing the first substrate 401 and the seal pattern 431 used to bond the substrates. .

However, the dam structure 460b disposed inside the seal pattern 431, that is, the support pattern 421b formed on the first substrate 401 and the contact pattern 457b formed on the second substrate 441 are contacted with each other. Moisture, gas, and the like penetrated from the outside no longer penetrate into the organic light emitting device.

On the other hand, while described above with reference to a preferred embodiment of the present invention, those skilled in the art various modifications of the present invention without departing from the spirit and scope of the invention described in the claims below And can be changed.

As described above, the organic light emitting display device and the manufacturing method thereof according to the present invention have the following effects.

The organic light emitting display device and the method of manufacturing the same according to the present invention form a dam structure of a shielded structure by selectively forming a support pattern and a contact pattern on the lower plate and the upper plate, respectively, so that they are brought into contact with each other.

Accordingly, the organic light emitting display device and the method of manufacturing the same according to the present invention have moisture due to the dam structure provided between the seal pattern and the pixel region even if moisture from the outside of the organic light emitting device penetrates into the organic light emitting device. Since the penetration into the organic light emitting device is no longer blocked, defects of the device can be greatly suppressed.

In particular, the organic electroluminescent device according to the present invention is provided with a sealed dam structure in addition to the outermost seal pattern, thereby improving external moisture permeability and vacuum preservation ability.

Claims (47)

A first substrate and a second substrate on which a plurality of pixel units are defined; A thin film transistor formed in the pixel region of the first substrate and composed of a gate electrode, an active layer, and a source / drain electrode; A connection wiring connected to the drain electrode; An organic light emitting diode formed on the second substrate and electrically connected to the connection wiring; A seal pattern formed between the first substrate and the second substrate; And And a dam structure disposed between the seal pattern and the pixel region and in contact with the first substrate and the second substrate. The organic light emitting device of claim 1, wherein the dam structure is formed in a hermetic structure. The organic light emitting device of claim 1, wherein the dam structure is at least one. The organic light emitting device of claim 1, wherein the dam structure comprises the pair of support patterns and a contact pattern in contact with the pair of support patterns. The organic light emitting device of claim 4, wherein the contact pattern is inserted into and fixed to a space provided between the pair of support patterns. The organic light emitting device of claim 4, wherein the pair of support patterns and the contact patterns are formed on different substrates. The organic light emitting device of claim 1, wherein the dam structure comprises a support pattern and a contact pattern. The organic light emitting device of claim 7, wherein the support pattern and the contact pattern are formed on different substrates. The organic light emitting device of claim 8, wherein the support pattern and the contact pattern are in contact with each side or an upper surface thereof. The organic light emitting device of claim 1, wherein a contact spacer is formed between the drain electrode and the connection wiring. The organic light emitting diode of claim 1, wherein the organic light emitting diode comprises a first electrode, an organic light emitting layer, and a second electrode. The organic light emitting device of claim 11, wherein the second electrode is connected to a drain electrode through the connection wiring. The organic light emitting device of claim 1, wherein a partition wall is formed on the second substrate to separate each pixel part. The organic light emitting device of claim 1, wherein the partition is formed of a photosensitive resin or an insulating material. The organic light emitting device of claim 1, wherein the dam structure is formed of a photosensitive resin. Providing a first substrate and a second substrate on which a plurality of pixel units are defined; Forming a thin film transistor including a gate electrode, an active layer, and a source / drain electrode in a pixel area of the first substrate; Forming a connection wiring connected to the drain electrode; Forming an organic light emitting diode connected to the connection wiring on the second substrate; Forming a dam structure in which a first substrate and a second substrate are in contact with an outer portion of the pixel area defined in the first substrate and the second substrate; And And forming a seal pattern on the outer periphery of the first substrate and the second substrate to bond the first substrate and the second substrate together. 17. The method of claim 16, wherein the dam structure is made of a hermetic structure. 17. The method of claim 16, wherein the dam structure is at least one. 17. The method of claim 16, wherein the dam structure comprises the pair of support patterns and a contact pattern in contact with the pair of support patterns. 20. The method of claim 19, wherein the contact pattern is inserted into and fixed to a space provided between the pair of support patterns. 20. The method of claim 19, wherein the pair of support patterns and the contact patterns are formed on different substrates. The method of claim 16, wherein the dam structure comprises one support pattern and a contact pattern. The method of claim 22, wherein the support pattern and the contact pattern are formed on different substrates. The method of claim 23, wherein the support pattern and the contact pattern are in contact with the side or the top surface corresponding to each other. 17. The method of claim 16, further comprising forming a contact spacer between the drain electrode and the connection wiring. The method of claim 16, wherein the forming of the organic light emitting diode comprises forming a first electrode, an organic light emitting layer, and a second electrode. 27. The method of claim 26, wherein the second electrode is connected to a drain electrode through the connection wiring. The method of claim 16, further comprising forming partition walls on the second substrate to separate the pixel units. The method of claim 16, wherein the barrier rib is formed of a photosensitive resin or an insulating material. 17. The method of claim 16, wherein the dam structure is formed of a photosensitive resin. A first substrate and a second substrate on which a plurality of pixel units are defined; A thin film transistor formed in the pixel region of the first substrate and composed of a gate electrode, an active layer, and a source / drain electrode; An interlayer insulating film formed on the thin film transistor and having a contact hole exposing the drain electrode; A contact spacer formed on the interlayer insulating film; A connection wiring formed on the contact spacer and the interlayer insulating layer and connected to the drain electrode through the contact hole; An organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode formed on the second substrate; A seal pattern formed between the first substrate and the second substrate; And And a dam structure comprising a support pattern and a contact pattern formed on the first substrate and the second substrate, respectively, disposed between the seal pattern and the pixel region. 32. The organic light emitting device of claim 31, wherein the dam structure is made of a hermetic structure. 32. The organic light emitting device of claim 31, wherein the dam structure is at least one. The organic light emitting device of claim 31, wherein the support pattern comprises a pair of support patterns or one. 35. The organic light emitting device of claim 34, wherein the contact pattern is inserted into and fixed to a space provided between the pair of support patterns. 32. The organic light emitting device of claim 31, wherein the support pattern and the contact pattern are formed on different substrates. 32. The organic light emitting device of claim 31, wherein a partition wall is formed on the second substrate to separate each pixel portion. Providing a first substrate and a second substrate arranged to be spaced apart from each other and having a plurality of pixel portions defined therein; Forming a thin film transistor including a gate electrode, an active layer, and a source / drain electrode in the pixel region of the first substrate; Forming an interlayer insulating film having a contact hole exposing the drain electrode on the thin film transistor; Forming a contact spacer on the interlayer insulating film; Forming a connection wiring on the contact spacer and the interlayer insulating layer to be connected to the drain electrode through the contact hole; Forming an organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode on the second substrate; Forming a dam structure including a support pattern and a contact pattern at an outer portion of the pixel region of the first substrate and the second substrate; And And forming a seal pattern on the outer periphery of the first substrate and the second substrate to bond the first substrate and the second substrate together. 39. The method of claim 38, wherein the dam structure is made of a hermetic structure. 39. The method of claim 38, wherein the dam structure is at least one. The method of claim 38, wherein the support pattern comprises a pair of support patterns or a single support pattern. 42. The method of claim 41, wherein the contact pattern is inserted into and fixed to a space provided between the pair of support patterns. The method of claim 38, wherein the support pattern and the contact pattern are formed on different substrates. The method of claim 38, further comprising forming a partition wall on the second substrate to separate each pixel portion. The method of claim 38, wherein the support pattern and the contact pattern forming the dam structure are formed of a photosensitive resin. The method of claim 38, wherein the contact spacer is formed of a photosensitive resin. The method of claim 38, wherein the contact spacer and the support pattern are formed at the same time.

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