KR20080075717A - Method of fabricating in plane switching mode liquid crystal display device - Google Patents
Method of fabricating in plane switching mode liquid crystal display device Download PDFInfo
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- KR20080075717A KR20080075717A KR1020070014999A KR20070014999A KR20080075717A KR 20080075717 A KR20080075717 A KR 20080075717A KR 1020070014999 A KR1020070014999 A KR 1020070014999A KR 20070014999 A KR20070014999 A KR 20070014999A KR 20080075717 A KR20080075717 A KR 20080075717A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
Abstract
The method of manufacturing a transverse electric field type liquid crystal display device of the present invention includes an organic insulating film having a low dielectric constant when forming a protective film, thereby improving the aperture ratio of the liquid crystal display panel and treating the organic insulating film at a temperature before curing. Providing a first substrate divided into a pixel portion, a data pad portion, and a gate pad portion to enable a number of masks by collectively etching the inorganic insulating layer; Forming a gate electrode, a gate line, and a first common electrode on the pixel portion of the first substrate; Forming a gate insulating film on the first substrate; Forming an active pattern and a source / drain electrode on the pixel portion of the first substrate, and forming a data line crossing the gate line to define a pixel region; A first passivation layer made of an inorganic insulation layer, a second passivation layer made of an organic insulation layer, and a third passivation layer made of an inorganic insulation layer are formed on the first substrate, wherein the second passivation layer has a temperature before curing of the organic insulation layer. Forming at ° C .; Removing a portion of the first to third passivation layers to form a first contact hole exposing a portion of the drain electrode; Forming a pixel electrode line electrically connected to the drain electrode through the first contact hole, and forming a second common electrode, a third common electrode, and a pixel electrode which are alternately disposed in the pixel region to generate a transverse electric field; step; And bonding the first substrate and the second substrate to each other.
Description
1 is an exploded perspective view schematically showing a general liquid crystal display device.
2 is a plan view showing a part of an array substrate of a general transverse electric field type liquid crystal display device;
3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along the line II-II ′ of the array substrate shown in FIG. 2.
4 is a plan view schematically illustrating a portion of an array substrate of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.
5A to 5D are cross-sectional views sequentially illustrating a manufacturing process along lines IVa-IVa ', IVb-IVb, and IVc-IVc of the array substrate shown in FIG.
6A to 6D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 4.
7A to 7F are cross-sectional views illustrating a second mask process according to an embodiment of the present invention in the array substrate shown in FIGS. 5B and 6B.
8A to 8E are cross-sectional views illustrating a third mask process according to an embodiment of the present invention in the gate pad portion of the array substrate illustrated in FIGS. 5C and 6C.
** Explanation of symbols for main parts of drawings **
108a ~ 108c: common electrode 108l: common line
110
115b '~ 115b' ": Shield 116: Gate line
117
118l: pixel electrode line 121: gate electrode
122
124:
The present invention relates to a method of manufacturing a transverse electric field type liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display which can reduce the number of masks, simplify the manufacturing process, improve yield, and improve the aperture ratio of the liquid crystal display panel. A method of manufacturing a device.
Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, a liquid crystal display (LCD) is a device that displays an image using optical anisotropy of liquid crystal, and is actively applied to a laptop or a desktop monitor because it is excellent in resolution, color display, and image quality. It is becoming.
The liquid crystal display is largely composed of a color filter substrate and an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.
The active matrix (AM) method, which is a driving method mainly used in the liquid crystal display device, uses an amorphous silicon thin film transistor (a-Si TFT) as a switching device to drive the liquid crystal in the pixel portion. to be.
Hereinafter, a structure of a general liquid crystal display device will be described in detail with reference to FIG. 1.
1 is an exploded perspective view schematically illustrating a general liquid crystal display.
As shown in the figure, the liquid crystal display device is largely a liquid crystal layer (liquid crystal layer) formed between the color filter substrate 5 and the
The color filter substrate 5 includes a color filter C composed of a plurality of
In addition, the
The color filter substrate 5 and the
At this time, the driving method generally used in the liquid crystal display device is a twisted nematic (TN) method for driving the nematic liquid crystal molecules in a vertical direction with respect to the substrate, but the liquid crystal display device of the twisted nematic method Has the disadvantage that the viewing angle is as narrow as 90 degrees. This is due to the refractive anisotropy of the liquid crystal molecules because the liquid crystal molecules oriented horizontally with the substrate are oriented almost perpendicular to the substrate when a voltage is applied to the liquid crystal display panel.
Accordingly, there is an in-plane switching (IPS) type liquid crystal display device in which the liquid crystal molecules are driven in a horizontal direction with respect to the substrate to improve the viewing angle to 170 degrees or more.
2 is a plan view illustrating a part of an array substrate of a general transverse electric field type liquid crystal display device.
As shown in the figure, a
The thin film transistor includes a
In this case, the
Since the manufacturing process of the liquid crystal display device basically requires a plurality of mask processes (ie, photolithography process) for fabricating an array substrate including a thin film transistor, a method of reducing the number of masks in terms of productivity is required. ought.
3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along line II-II ′ of the array substrate illustrated in FIG. 2.
As shown in FIG. 3A, a
Next, as shown in FIG. 3B, the gate
In this case, an n + amorphous silicon
Thereafter, as illustrated in FIG. 3C, a conductive metal material is deposited on the entire surface of the
In this case, the n + amorphous silicon thin film pattern formed on the
Next, as shown in FIG. 3D, a
Finally, as shown in FIG. 3E, the
As described above, fabrication of an array substrate including a thin film transistor requires a total of five photolithography processes to pattern a gate electrode, an active pattern, a source / drain electrode, a contact hole, a pixel electrode, and the like.
The photolithography process is a series of processes in which a pattern drawn on a mask is transferred onto a substrate on which a thin film is deposited to form a desired pattern. The photolithography process includes a plurality of processes such as photoresist coating, exposure, and development processes. It has the disadvantage of dropping.
In particular, a mask designed to form a pattern is very expensive, and as the number of masks applied to the process increases, the manufacturing cost of the liquid crystal display device increases in proportion thereto.
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method of manufacturing a transverse electric field type liquid crystal display device in which an array substrate is manufactured by four mask processes.
Another object of the present invention is to provide a method of manufacturing a transverse electric field type liquid crystal display device for improving the aperture ratio of a liquid crystal display panel.
Other objects and features of the present invention will be described in the configuration and claims of the invention described below.
In order to achieve the above object, a method of manufacturing a transverse electric field type liquid crystal display device of the present invention comprises the steps of providing a first substrate divided into a pixel portion, a data pad portion and a gate pad portion; Forming a gate electrode, a gate line, and a first common electrode on the pixel portion of the first substrate; Forming a gate insulating film on the first substrate; Forming an active pattern and a source / drain electrode on the pixel portion of the first substrate, and forming a data line crossing the gate line to define a pixel region; A first passivation layer made of an inorganic insulation layer, a second passivation layer made of an organic insulation layer, and a third passivation layer made of an inorganic insulation layer are formed on the first substrate, wherein the second passivation layer has a temperature before curing of the organic insulation layer. Forming at ° C .; Removing a portion of the first to third passivation layers to form a first contact hole exposing a portion of the drain electrode; Forming a pixel electrode line electrically connected to the drain electrode through the first contact hole, and forming a second common electrode, a third common electrode, and a pixel electrode which are alternately disposed in the pixel region to generate a transverse electric field; step; And bonding the first substrate and the second substrate to each other.
Hereinafter, a preferred embodiment of a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.
4 is a plan view schematically illustrating a portion of an array substrate of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention. For convenience of description, one pixel including a gate pad part, a data pad part, and a thin film transistor of a pixel part is illustrated. Indicates.
In an actual liquid crystal display device, N gate lines and M data lines intersect and MxN pixels exist, but one pixel is shown in the figure for simplicity of explanation.
In this case, the present embodiment has been described using a transverse electric field type liquid crystal display as an example, but the present invention is not limited thereto, and the present invention may be applied to a twisted nematic liquid crystal display.
As shown in the figure, a
The thin film transistor includes a
A portion of the
As described above, the
In this case, the
In this case, the first
The first
In this case, a portion of the pixel electrode line 118l overlaps a portion of the first common line 108l below the gate insulating layer and the passivation layer to form a storage capacitor. The storage capacitor Cst keeps the voltage applied to the liquid crystal capacitor constant until the next signal comes in. In addition to maintaining the signal, the storage capacitor has effects such as stabilization of gray scale display and reduction of flicker and afterimage.
The
That is, the
For reference,
In this case, as shown in FIG. 4, when the
In addition, when the
Here, in the transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention, a mask process is performed using a diffraction mask or a half-tone mask (hereinafter referred to as a half-tone mask when referring to a diffraction mask). By forming active patterns, source / drain electrodes, and data lines, array substrates can be fabricated using a total of four mask processes.
In addition, the transverse electric field type liquid crystal display device according to the embodiment of the present invention forms a protective film having a three-layer structure of an inorganic insulating film, an organic insulating film, and an inorganic insulating film. As such, an organic insulating film having a low dielectric constant is included in the protective film. As the opening ratio of the panel is improved and an inorganic insulating film is formed above and below the organic insulating film, problems such as an increase in off current of the thin film transistor by the organic insulating film and no liquid crystal injection are prevented. In particular, by treating the organic insulating film at a temperature before curing, it is possible to collectively etch the inorganic insulating film so that the aperture ratio can be improved without adding a mask, and the following method of manufacturing a transverse electric field type liquid crystal display device is described. It will be described in detail through.
5A through 5D are cross-sectional views sequentially illustrating a manufacturing process along lines IVa-IVa ', IVb-IVb, and IVc-IVc of the array substrate illustrated in FIG. 4, and on the left side, a process of manufacturing an array substrate of a pixel portion is shown. The right side shows a step of manufacturing an array substrate of a data pad part and a gate pad part in order.
6A to 6D are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 4.
As shown in FIGS. 5A and 6A, the
In this case, the first common line 108l is formed above and below the pixel area in a direction substantially parallel to the
In this case, the
Here, the first conductive layer may include aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo), and Low resistance opaque conductive materials such as molybdenum alloys can be used. In addition, the first conductive layer may have a multilayer structure in which two or more low resistance conductive materials are stacked.
Next, as shown in FIGS. 5B and 6B, the
In addition, a
In addition, a
In this case, an
In addition, a lower portion of the
The
7A to 7F are cross-sectional views illustrating a second mask process according to an exemplary embodiment of the present invention in the array substrate illustrated in FIGS. 5B and 6B.
As shown in FIG. 7A, an
In this case, the second
And, as shown in Figure 7b, after forming a
In this case, the
Subsequently, after the
In this case, the
Next, as shown in FIG. 7D, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second formed on the lower portion of the first
In addition, a
In this case, the first n + amorphous silicon
In addition, a lower portion of the
Subsequently, when an ashing process of removing a portion of the
In this case, the first photoresist pattern to the fourth photoresist pattern correspond to the blocking region III by the
Subsequently, as shown in FIG. 7F, a portion of the first n + amorphous silicon thin film pattern and the second conductive film pattern using the remaining
In this case, an ohmic contact layer formed of the n + amorphous silicon thin film on the
As described above, according to the exemplary embodiment of the present invention, the
Subsequently, as shown in FIGS. 5C and 6C, the passivation layers 115b ′ to 115b are disposed on the entire surface of the
In this case, the passivation layers 115b 'to 115b' "include the
As such, the
In addition, a
In this case, when the passivation layer is formed of only the organic insulation layer, the back channel portion of the lower portion of the organic insulation layer is exposed to the organic material to increase the off current, thereby deteriorating the electrical characteristics of the thin film transistor, and forming a pixel electrode on the organic insulation layer. As a result, the interface properties deteriorate and problems such as non-injection of the liquid crystal are generated.
However, the three-layered protective film in which the inorganic insulating film, the organic insulating film, and the inorganic insulating film are stacked as described above has a disadvantage in that it is impossible to collectively etch, thereby increasing the manufacturing cost as an additional mask process is required. The reason why the three-layered protective film could not be collectively etched in the conventional process is because the thickness of the organic insulating film is about 3 μm and the etching rate is low, thereby limiting the application of the dry etching process.
Accordingly, in the exemplary embodiment of the present invention, the organic insulating layer and the inorganic insulating layer thereon are deposited at a temperature at which the organic insulating layer is not completely cured, thereby increasing the etch rate of the organic insulating layer so that the organic etching layer can be easily etched by a dry etching process. As a result, the passivation layers 115b 'to 115b' "and the
Hereinafter, the third mask process will be described in detail with reference to the accompanying drawings.
8A to 8E are cross-sectional views illustrating a third mask process according to an embodiment of the present invention in the gate pad portion of the array substrate shown in FIGS. 5C and 6C. A process of forming the fourth contact hole is shown as an example.
As shown in FIG. 8A, a
In this case, when the second
Thereafter, an inorganic insulating film is deposited on the entire surface of the
Next, as shown in FIG. 8B, a
In this case, the
Subsequently, as shown in FIGS. 8C and 8D, the
Here, dry etching may be applied to etching the
As described above, the etching rate of the photoacryl in the case of performing only the first bake is about 7000 mW / min in the dry etching process condition, but when the second bake is performed at 230 ° C., the first bake is about 50 mW / min. It can be seen that the etching rate of the photoacryl is very small as compared with the case where only the progress was made. That is, in the case of the present invention, by treating the photoacryl at a temperature before curing, the etch rate of the photoacryl can be increased, thereby enabling collective etching with the inorganic insulating layer.
In this case, when the
Subsequently, as illustrated in FIG. 8E, the
In this case, the dry etching process may be performed at a gas ratio of SF 6 and O 2 of 1: 2 to 5 (preferably 1: 3.5) under a vacuum degree of 70 to 200 mT and an RF power of 1000 to 1300 W. An etching rate of the photoacryl is greater than an etching rate (about 3000 μs / min), thereby forming a
In this case, the dotted line illustrated in the drawing indicates side surfaces of the photoresist pattern, the gate insulating layer, and the protective layer before the width is reduced by the dry etching process illustrated in FIG. 8C.
Next, as shown in FIGS. 5D and 6D, the
In addition, by selectively patterning the third conductive layer through the fourth mask process, the second
In this case, the second
In addition, the third conductive layer may be formed of indium tin oxide (ITO) or indium-zinc- to form the second
In this case, before the deposition of the third conductive film, a second baking process for curing the second
In this case, when the three-layered
The array substrate according to the embodiment of the present invention configured as described above is bonded to the color filter substrate by a sealant formed on the outside of the image display area, wherein the color filter substrate includes light through the thin film transistor, the gate line, and the data line. Black matrix to prevent leakage and color filter for red, green and blue color are formed.
At this time, the bonding of the color filter substrate and the array substrate is made through a bonding key formed on the color filter substrate or the array substrate.
As described above, the embodiment of the present invention describes an amorphous silicon thin film transistor using an amorphous silicon thin film as an active pattern, for example. However, the present invention is not limited thereto, and the present invention provides a polycrystalline silicon thin film as the active pattern. The same applies to the polysilicon thin film transistors used.
In addition, the present invention can be used not only in liquid crystal display devices but also in other display devices fabricated using thin film transistors, for example, organic light emitting display devices in which organic light emitting diodes (OLEDs) are connected to driving transistors. have.
Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.
As described above, the method of manufacturing the transverse electric field type liquid crystal display device according to the present invention provides the effect of reducing the number of masks used for manufacturing the thin film transistor and reducing the manufacturing process and cost.
In addition, the method of manufacturing a transverse electric field type liquid crystal display device according to the present invention includes an organic insulating film having a low dielectric constant when forming a protective film, thereby improving the aperture ratio of the liquid crystal display panel and collectively combining the organic insulating film together with an inorganic insulating film. By etching, the number of masks can be reduced.
Claims (21)
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KR1020070014999A KR20080075717A (en) | 2007-02-13 | 2007-02-13 | Method of fabricating in plane switching mode liquid crystal display device |
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KR1020070014999A KR20080075717A (en) | 2007-02-13 | 2007-02-13 | Method of fabricating in plane switching mode liquid crystal display device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8659734B2 (en) | 2011-01-03 | 2014-02-25 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US8735891B2 (en) | 2011-07-22 | 2014-05-27 | Samsung Display Co., Ltd. | Display substrate and method of manufacturing the same |
KR20140080001A (en) * | 2012-12-20 | 2014-06-30 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same |
CN104777640A (en) * | 2014-01-13 | 2015-07-15 | 三星显示有限公司 | Liquid crystal display and manufacturing method thereof |
US9696602B2 (en) | 2014-03-05 | 2017-07-04 | Samsung Electronics Co., Ltd. | Manufacturing method of liquid crystal display |
-
2007
- 2007-02-13 KR KR1020070014999A patent/KR20080075717A/en not_active Application Discontinuation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8659734B2 (en) | 2011-01-03 | 2014-02-25 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US9588385B2 (en) | 2011-01-03 | 2017-03-07 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US8735891B2 (en) | 2011-07-22 | 2014-05-27 | Samsung Display Co., Ltd. | Display substrate and method of manufacturing the same |
KR20140080001A (en) * | 2012-12-20 | 2014-06-30 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same |
KR101971048B1 (en) * | 2012-12-20 | 2019-04-22 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same |
CN104777640A (en) * | 2014-01-13 | 2015-07-15 | 三星显示有限公司 | Liquid crystal display and manufacturing method thereof |
US9287298B2 (en) | 2014-01-13 | 2016-03-15 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
CN104777640B (en) * | 2014-01-13 | 2019-08-23 | 三星显示有限公司 | Liquid crystal display and its manufacturing method |
US9696602B2 (en) | 2014-03-05 | 2017-07-04 | Samsung Electronics Co., Ltd. | Manufacturing method of liquid crystal display |
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