KR20080053100A - 자기기록 매체 및 그 제조방법 - Google Patents
자기기록 매체 및 그 제조방법 Download PDFInfo
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- KR20080053100A KR20080053100A KR1020060125072A KR20060125072A KR20080053100A KR 20080053100 A KR20080053100 A KR 20080053100A KR 1020060125072 A KR1020060125072 A KR 1020060125072A KR 20060125072 A KR20060125072 A KR 20060125072A KR 20080053100 A KR20080053100 A KR 20080053100A
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 34
- 239000000696 magnetic material Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- -1 CoTb Inorganic materials 0.000 claims description 6
- 229910019227 CoFeTb Inorganic materials 0.000 claims description 5
- 229910002441 CoNi Inorganic materials 0.000 claims description 5
- 229910018936 CoPd Inorganic materials 0.000 claims description 5
- 229910018979 CoPt Inorganic materials 0.000 claims description 5
- 229910015187 FePd Inorganic materials 0.000 claims description 5
- 229910005335 FePt Inorganic materials 0.000 claims description 5
- 238000001127 nanoimprint lithography Methods 0.000 claims description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 238000001015 X-ray lithography Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 238000000609 electron-beam lithography Methods 0.000 claims description 2
- 238000000025 interference lithography Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract 7
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/708—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by addition of non-magnetic particles to the layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
- G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0026—Pulse recording
- G11B2005/0029—Pulse recording using magnetisation components of the recording layer disposed mainly perpendicularly to the record carrier surface
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
Claims (27)
- 기판;상기 기판 상에서, 상기 기판에 접하는 하부면(bottom surface)의 면적과 상기 하부면에 대응하는 상부면(top surface)의 면적이 서로 다른 복수의 자성체 도트들; 및상기 기판 상에서, 상기 자성체 도트들 사이에서 상기 자성체 도트들을 격리시키는 비자성체 영역;을 구비하는 것을 특징으로 하는 자기기록 매체.
- 제1항에 있어서,상기 도트는 원뿔대 형상(a truncated cone shape)인 것을 특징으로 하는 자기기록 매체.
- 제1항에 있어서,상기 도트는 각뿔대 형상(a truncated pyramide shape)인 것을 특징으로 하는 자기기록 매체.
- 제1항에 있어서,상기 도트는 상부면 면적이 하부면 면적보다 작은 것을 특징으로 하는 자기기록 매체.
- 제 4항에 있어서,상기 도트는 하부면 면적에 대한 상부면 면적의 상대비는 0.9 이하인 것을 특징으로 하는 자기기록 매체.
- 제 5항에 있어서,상기 도트의 하부면 면적에 대한 상부면 면적의 상대비는 0.1 내지 0.5인 것을 특징으로 하는 자기기록 매체.
- 제1항에 있어서,상기 도트의 상부면 면적이 하부면 면적보다 큰 것을 특징으로 하는 자기기록 매체.
- 제 7항에 있어서,상기 도트의 상부면 면적에 대한 하부면 면적의 상대비는 0.9 이하인 것을 특징으로 하는 자기기록 매체.
- 제 1항에 있어서,상기 도트는 콘(cone) 형상인 것을 특징으로 하는 자기기록 매체.
- 제 1항에 있어서,상기 도트 물질은 자기 이방성 상수가 105 J/m3 내지 107 J/m3인 것을 특징으로 하는 자기기록 매체.
- 제 10항에 있어서,상기 도트 물질은 CoPt, CoPd, CoNi, CoTb, FePt, FePd, CoFeTb, CoFeGd, CoFeDy, CoFeHo 및 CoFeNb로 이루어진 군에서 선택된 적어도 어느 한 물질인 것을 특징으로 하는 자기기록 매체.
- 제 1항에 있어서,상기 도트는 자기 이방성 상수가 서로 다른 제1자성체와 제2자성체가 적층되어 형성된 것을 특징으로 하는 자기기록 매체.
- 제 12항에 있어서,상기 도트는 자기 이방성 상수가 105 J/m3 내지 107 J/m3인 제1자성체가 자기 이방성 상수가 102 J/m3 내지 103 J/m3인 제2자성체 상부에 형성된 것을 특징으로 하는 자기기록 매체.
- 제 12항에 있어서,상기 도트는 자기 이방성 상수가 102 J/m3 내지 103 J/m3인 제2자성체가 자기 이방성 상수가 105 J/m3 내지 107 J/m3인 제1자성체 상부에 형성된 것을 특징으로 하는 자기기록 매체.
- 제 13항 및 제 14항에 있어서,상기 제1자성체는 CoPt, CoPd, CoNi, CoTb, FePt, FePd, CoFeTb, CoFeGd, CoFeDy, CoFeHo 및 CoFeNb로 이루어진 군에서 선택된 적어도 어느 한 물질인 것을 특징으로 하는 자기기록 매체.
- 제 13항 및 제 14항에 있어서,상기 제2자성체는 NiFe, CoFe, Ni, Fe, Co 및 이들의 합금 중 선택된 물질인 것을 특징으로 하는 자기기록 매체.
- 제 1항에 있어서,상기 기판 및 상기 자성체 도트들 사이에 시드층(seed layer), 연자성 하지층(soft magnetic under layer) 및 중간층(intermediate layer)을 더 구비하는 것을 특징으로 하는 자기기록 매체.
- 기판 상에 주형층을 형성하는 단계;상기 주형층에 하부면의 면적과 하부면에 대응하는 상부면의 면적이 다른 공간을 형성하는 패턴을 형성하는 단계; 및상기 공간에 자성체 물질을 채워 자성체 도트를 형성하는 단계;를 구비하는 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 패턴은 상기 자성체 도트들을 서로 격리시키는 비자성체 영역인 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 패턴을 제거하고, 상기 자성체 도트들 사이에 비자성체 물질을 채우는 단계를 더 포함하는 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 패턴을 형성하는 방법은 나노 임프린트 리소그래피(Nano Imprint Lithography), 포토 리소그래피(Photo Lithography), 이빔 리소그래피(E-beam Lithography), 홀로그래픽 리소그래피 및 엑스레이 리소그래피(X-ray Lithography)로 이루어진 군에서 선택한 어느 한 방법인 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 자성체 도트는 원뿔대 형상인 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 자성체 도트는 각뿔대 형상인 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 자성체 도트는 상부면 면적이 하부면 면적보다 작은 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 자성체 도트는 상부면 면적이 하부면 면적보다 큰 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서,상기 자성체 도트는 콘 형상인 것을 특징으로 하는 자기기록 매체 제조방법.
- 제 18항에 있어서, 상기 자성체 도트를 형성하는 단계는,상기 공간에 서로 다른 자기 이방성 상수를 가지는 복수의 자성체 물질을 순차적으 로 채워서 적층된 자성체 도트를 형성하는 것을 특징으로 하는 자기기록 매체 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060125072A KR100914931B1 (ko) | 2006-12-08 | 2006-12-08 | 자기기록 매체 및 그 제조방법 |
US11/758,795 US20080137231A1 (en) | 2006-12-08 | 2007-06-06 | Magnetic recording medium and method of fabricating the same |
CN2007101627316A CN101197137B (zh) | 2006-12-08 | 2007-10-08 | 磁记录介质及其制造方法 |
JP2007271757A JP2008146809A (ja) | 2006-12-08 | 2007-10-18 | 磁気記録媒体及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060125072A KR100914931B1 (ko) | 2006-12-08 | 2006-12-08 | 자기기록 매체 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20080053100A true KR20080053100A (ko) | 2008-06-12 |
KR100914931B1 KR100914931B1 (ko) | 2009-08-31 |
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KR1020060125072A KR100914931B1 (ko) | 2006-12-08 | 2006-12-08 | 자기기록 매체 및 그 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080137231A1 (ko) |
JP (1) | JP2008146809A (ko) |
KR (1) | KR100914931B1 (ko) |
CN (1) | CN101197137B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009037706A (ja) * | 2007-08-02 | 2009-02-19 | Canon Inc | 構造体及びその製造方法 |
US8154813B2 (en) * | 2008-09-02 | 2012-04-10 | Seagate Technology, Llc | Embedded servo on track for bit-patterned device |
US8228636B2 (en) * | 2008-10-30 | 2012-07-24 | The Regents Of The University Of California | Apparatus, system and method for magnetic recording |
JP5030935B2 (ja) * | 2008-12-19 | 2012-09-19 | 昭和電工株式会社 | 磁気記録媒体及びその製造方法並びに記憶装置 |
US20120075747A1 (en) * | 2010-09-28 | 2012-03-29 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for shape-engineered islands of exchange spring or exchange coupled composite, bit patterned media |
TWI702294B (zh) * | 2018-07-31 | 2020-08-21 | 日商田中貴金屬工業股份有限公司 | 磁氣記錄媒體用濺鍍靶 |
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US6174597B1 (en) * | 1996-07-26 | 2001-01-16 | Kabushiki Kaisha Toshiba | Magnetic recording apparatus |
JP2002358616A (ja) * | 2000-06-12 | 2002-12-13 | Toshiba Corp | 磁気記録媒体および磁気記録装置 |
US6899959B2 (en) * | 2002-02-12 | 2005-05-31 | Komag, Inc. | Magnetic media with improved exchange coupling |
CN100405468C (zh) * | 2003-09-26 | 2008-07-23 | 鸿富锦精密工业(深圳)有限公司 | 磁存储介质及其制造方法 |
US8323808B2 (en) * | 2004-01-09 | 2012-12-04 | Fuji Electric Co., Ltd. | Perpendicular magnetic recording medium |
JP4214522B2 (ja) * | 2004-01-28 | 2009-01-28 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体、および、その製造方法 |
JP2005276365A (ja) * | 2004-03-25 | 2005-10-06 | Toshiba Corp | グラニュラ薄膜、垂直磁気記録媒体および磁気記録再生装置 |
JP4427392B2 (ja) * | 2004-06-22 | 2010-03-03 | 株式会社東芝 | 磁気記録媒体、その製造方法及び磁気記録再生装置 |
US7494726B2 (en) * | 2004-07-07 | 2009-02-24 | Fuji Electric Device Technology Co., Ltd. | Perpendicular magnetic recording medium, method of manufacturing same, and magnetic recording device |
JP3796255B2 (ja) * | 2004-07-12 | 2006-07-12 | Tdk株式会社 | 磁気記録再生装置 |
JP2006092632A (ja) * | 2004-09-22 | 2006-04-06 | Tdk Corp | 磁気記録媒体及びその製造方法並びに磁気記録媒体用中間体 |
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2006
- 2006-12-08 KR KR1020060125072A patent/KR100914931B1/ko active IP Right Grant
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2007
- 2007-06-06 US US11/758,795 patent/US20080137231A1/en not_active Abandoned
- 2007-10-08 CN CN2007101627316A patent/CN101197137B/zh not_active Expired - Fee Related
- 2007-10-18 JP JP2007271757A patent/JP2008146809A/ja active Pending
Also Published As
Publication number | Publication date |
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CN101197137B (zh) | 2013-01-02 |
JP2008146809A (ja) | 2008-06-26 |
CN101197137A (zh) | 2008-06-11 |
KR100914931B1 (ko) | 2009-08-31 |
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