KR20080028540A - Apparatus for vapor deposition of organic and method for deposition using the same - Google Patents

Abstract

An apparatus and a method for depositing an organic matter are provided to deposit a thin film with a uniform thickness by allowing a process gas to evenly distributed onto the entire area of the substrate without the process gas being biased, and reduce size and manufacturing cost of the apparatus and maintain and repair the apparatus conveniently by making it not necessary to install a separate equipment for rotating or driving a stage and a source supply source horizontally and vertically. An organic matter depositing apparatus comprises: a source supply part(100) for supplying a process gas generated by vaporization of an organic matter to be deposited onto a substrate(S); a chamber(250) including a diffusion chamber(260) for providing a diffusion space of the process gas received from the source supply part, and a deposition treatment chamber(270) for providing an organic matter depositing space of the substrate; a reflecting diffusion part(230) for reflecting the process gas in the diffusion chamber to diffuse the reflected process gas; and an exhaust controlling part(240) which maintains airtightness between the diffusion chamber and the deposition treatment chamber, and controls exhaust of the process gas supplied to the diffusion chamber.

Description

Apparatus for vapor deposition of organic and method for deposition using the same}

1 is a schematic view showing an organic material deposition apparatus according to an embodiment of the present invention.

Figure 2 is an exploded perspective view showing the discharge intermittent portion of the organic material deposition apparatus according to the embodiment of the present invention.

Figure 3a is a partially enlarged cross-sectional view showing a sealed state of the diffusion chamber of the organic material deposition apparatus according to the embodiment of the present invention.

3B is a partially enlarged cross-sectional view illustrating an open state of a diffusion chamber of an organic material deposition apparatus according to an exemplary embodiment of the present invention.

4 is a schematic view showing a deposition processing unit of the organic material deposition apparatus according to another embodiment of the present invention.

5 is an exploded perspective view illustrating a reflection diffusion unit of the organic material deposition apparatus according to another embodiment of the present invention.

6 is a partial cross-sectional view showing a part of a deposition processing unit of an organic material deposition apparatus according to another embodiment of the present invention.

7 is a flowchart illustrating an organic material deposition method according to an embodiment of the present invention.

The present invention relates to an organic material deposition apparatus and a deposition method using the same, and more particularly, a reflection diffusion unit for reflecting and diffusing a process gas to improve the uniformity of a thin film thickness, and intermittently discharging the diffused process gas into a deposition processing chamber. It relates to an organic material deposition apparatus having a discharge intermittent portion and a deposition method using the same.

In recent years, as the information age rapidly enters, a display technology that displays information by text or image so that the user can see the information anytime and anywhere is becoming more important.

Looking at the consumption trend of such display devices, conventional CRTs are bulky and heavy, so they are easy to use, such as liquid crystal displays (LCDs), plasma display panels (PDPs), organic electroluminescence display devices (OLEDs), and the like. The demand for flat panel displays is growing rapidly.

However, LCD is a passive device that requires a separate light source, not a self-light emitting device, and has technical limitations in viewing angle, response speed, contrast ratio, etc. PDP has better characteristics than LCD in viewing angle and response speed, It is difficult to miniaturize, large power consumption, and expensive production cost.

On the other hand, OLED is a self-luminous type, so no backlight is required, power consumption is small, response speed is less than 10kW, and there is no problem of viewing angle, so any moving picture from small to large can be realized realistically. In addition, the basic structure is simple, making it easy to manufacture and ultimately producing ultra-thin and ultra-light displays with thicknesses of 1 mm or less. Furthermore, the display is manufactured on a flexible substrate such as plastic instead of a glass substrate, making it thinner, lighter, and unbreakable. Research into developing a flexible display is ongoing.

In general, OLED has a structure of an anode (ITO), an organic thin film, and a cathode electrode. The organic thin film layer may be made of a single material, but is generally composed of a multilayer such as a hole transport layer (HTL), a light emitting layer, and an electron transport layer (ETL).

As described above, the OLED having a multi-layer structure forms holes supplied from the hole transport layer and electrons supplied from the electron transport layer to the light emitting layer to form excitons coupled to the hole-electrons, and then the excitons return to the ground state. The energy is emitted by the generated energy.

Meanwhile, as a typical thin film deposition method in an OLED manufacturing process having a multi-layer structure, a vapor deposition method (VD) may be mentioned.

That is, a source gas in which the organic material is stored is heated to generate a process gas from the organic material, and a transfer gas is injected into the source source to supply the process gas into the chamber in which the deposition process is performed.

The thin film deposition method may be classified into a bottom-up, top-down, side injection type, etc. according to the supply position of the process gas.

Bottom-up seats the substrate on the upper side of the chamber and evaporates the process gas from below the chamber. Top-down seats the substrate on the lower side of the chamber and the process gas drops from the upper side of the chamber. By depositing the process gas is injected from one side inside the chamber to form a thin film on the substrate.

In this case, the deposition process is performed by forming a vacuum atmosphere of 10 ⁻⁷ torr or less in the chamber to prevent contamination of organic substances and to prolong the life of the device, as well as to control the appropriate deposition rate.

The most important part of the deposition process performed in such a vacuum atmosphere is to ensure the uniformity of the thickness of the thin film deposited on the substrate and to maintain a stable thermal state for a long time.

However, the bottom-up and the top-down are provided with the process gas concentrated to the center of the substrate, and the side injection type concentrates the process gas toward the side where the process gas is injected. Therefore, there is a problem that can not guarantee the uniformity of the thickness of the thin film of the substrate.

Therefore, by installing a separate device for rotating or driving the source and the source on which the substrate is seated, or to move up, down, left and right, the uniformity of the thickness of the thin film is to be improved, but this leads to an increase in the size and manufacturing cost of the equipment. There is a cumbersome problem in the maintenance of the equipment.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and includes a reflection diffusion portion for reflecting and diffusing a process gas between a source source and a stage on which a substrate is seated, and an emission control for discharging the process gas to be discharged to a deposition processing chamber. It is to provide an organic material deposition apparatus and a deposition method using the same to provide a portion, to improve the uniformity of the thin film thickness.

In order to achieve the above object, the organic material deposition apparatus according to the present invention comprises a source supply unit for supplying a process gas generated by the vaporization of the organic material to be deposited on a substrate; a diffusion chamber for providing a diffusion space of the process gas supplied from the source supply unit; A chamber including a deposition processing chamber providing an organic deposition space of the substrate; a reflection diffusion unit reflecting and diffusing the process gas from the diffusion chamber; and maintaining an airtightness between the diffusion chamber and the deposition processing chamber and supplying the diffusion chamber to the diffusion chamber. And a discharge control unit for controlling the discharge of the processed gas.

The reflective diffuser may be provided as a first reflective plate that extends from an end of a connection pipe that provides the process gas to the diffusion chamber.

The reflective diffuser may further include a second reflective plate spaced apart from the first reflective plate toward the side from which the process gas is injected, and positioned between the first reflective plate and the discharge control unit.

The first reflecting plate and the second reflecting plate may be radially provided.

A plurality of through holes may be formed in the second reflecting plate such that a part of the process gas injected from the connecting pipe passes through the second reflecting plate to be provided to the discharge control unit.

The reflection diffuser may further include a plurality of third reflecting plates adjacent to the second reflecting plate.

The discharge control unit may include a partition wall fixed to the inner wall of the chamber to provide the diffusion chamber, a shutter disposed adjacent to the partition wall, and an opening / closing driving unit configured to provide power to the shutter.

A plurality of first outlets through which the process gas is discharged may be formed in the partition wall, and a plurality of second outlets may be formed in the shutter to communicate with the first outlet.

The diameter of the first discharge port may be greater than that of the substrate side, and the diameter of the second discharge port may be greater than that of the diffusion chamber side.

The barrier rib and the shutter may be engaged by a rail structure to be slidingly driven by the opening and closing driver.

An airtight member may be further provided between the partition wall and the shutter.

On the other hand, the organic material deposition method according to an embodiment of the present invention comprises the steps of generating a process gas by vaporizing the organic material to be deposited on a substrate; supplying the process gas into the chamber on which the substrate is seated; The method may include closing a diffusion chamber, which is a diffusion space of a process gas, reflecting and diffusing the process gas; and opening the diffusion chamber and discharging the diffusion chamber into a deposition processing chamber in which deposition of the substrate is performed.

The diffusion chamber includes a reflection diffusion unit having a first reflection plate extending from an end of a connecting pipe providing the process gas to the diffusion chamber, wherein the process gas reflected from the discharge intermittent portion provided between the diffusion chamber and the deposition processing chamber is provided. Some of the light may be reflected by the first reflector to diffuse.

The reflective diffuser is disposed between the first reflecting plate and the discharge intermittent part spaced apart from the first reflecting plate, and further includes a second reflecting plate provided on a side from which the process gas is injected, and the sprayed from the connecting pipe. The process gas may be reflected by the second reflector, and the process gas reflected by the second reflector may be reflected by the first reflector and diffused.

The reflection diffusion unit may further include a plurality of third reflection plates adjacent to the second reflection plate to reflect the process gas in the diffusion chamber to diffuse the reflection.

The diffusion chamber may be blocked from the deposition processing chamber when the deposition process of the substrate is completed.

Hereinafter, with reference to the accompanying drawings will be described in detail an organic material deposition apparatus according to an embodiment of the present invention.

1 is a schematic view showing an organic material deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, in the organic material deposition apparatus according to the embodiment of the present invention, a source supply unit 100 and a thin film deposition process of the substrate S to vaporize the organic material deposited on the substrate S and provide it as a process gas. The deposition processing unit 200 is provided with a chamber 250 to be performed.

First, the source supply unit 100 is a source supply source 110 for vaporizing the organic material deposited on the substrate (S) to provide a process gas, and a transfer gas supply unit 130 for providing a transfer gas for the transfer of the process gas and , A flow controller 140 for controlling the flow rate of the transport gas, a connection pipe 150 connecting the transport gas supply unit 130, the source supply source 110, and the chamber 250, and a heater 120 for heating the organic material source. ).

The source source 110 includes a source container 112 having an inner space in which an organic source is accommodated. The source container 112 is heated by the heater 120 to generate a process gas from the organic source. Therefore, the source container 112 is preferably a crucible mainly used for high temperature treatment.

In addition, the upper end of the source container 112 is provided with a discharge pipe 116 in communication with the connection pipe 150. At this time, the upper portion of the source container 112 may be provided with a filter 114 to filter the organic matter or other impurities in the solid state when the process gas is discharged to the discharge pipe 116.

At this time, the heater 120 is connected to the connection pipe 150 and the chamber 250 to which the process gas is moved, it is preferable to maintain a temperature equal to or higher than the internal temperature of the heated source container 112. This is to prevent the process gas, which is moved along the connection pipe 150 in a gas state, from being deposited on the inner wall of the connection pipe 150 and the chamber 250 by the temperature difference.

 Here, the source container 112, the connection pipe 150, and the heater 120 is described as being heated by being connected to the chamber 250, in another embodiment, the outer wall of the source container 112, the connection The outer wall of the pipe 150 and the heating coil (not shown) of the shape surrounding the outer wall of the chamber 250 may be implemented to provide thermal energy, respectively.

On the other hand, when a process gas is generated by heating the organic material source, the transfer gas supply unit 130 provides the transfer gas to the connection pipe 150 to time the process gas into the chamber 250. In this case, as a transport gas provided from the transport gas supply unit 130, nitrogen (N 2), argon (Ar), helium (He), or the like, which are inert gases, may be used.

As such, the connection pipe 150 communicating with the discharge pipe 116 of the source container 112 extends through the flow controller 140 to the transfer gas supply unit 130.

Here, the discharge pipe 116 of the source container 112 is connected to the connection pipe 150 connected to the chamber 250, the connection pipe 150 is described as extending to the transfer gas supply 130, In another embodiment, the connection pipe 150 may be directly connected to the upper end of the source container 112 and separately provided with a supply pipe (not shown) for providing a transfer gas, and the supply pipe may be connected to the source container 112. There will be.

On the other hand, the mass flow controller (MFC) 140 is positioned between the transfer gas supply unit 130 and the source supply source 110 to adjust the flow rate of the transfer gas.

Such a flow controller connects an auxiliary pipe (not shown) which is replaced in parallel with the connection pipe 150 through which the transfer gas passes, passes a small amount of the transfer gas to the auxiliary pipe, and heats the middle portion of the auxiliary pipe. As the transfer gas passes, the flow rate of the transfer gas is controlled by measuring the difference between the front and rear temperature of the auxiliary pipe and measuring the flow rate of the transfer gas.

As such, the deposition processing unit 200 that receives the process gas from the source supply unit 100 includes a chamber 250 that provides an internal space in which the deposition process of the substrate S is performed. The chamber 250 is a stage in which the door 210 into which the substrate S enters and exits from the outside of the chamber 250 by a substrate transfer device (not shown), and the substrate S carried into the chamber 250 are seated. 220, and a vacuum exhaust unit 230 for forming a vacuum atmosphere in the chamber 250.

The stage 220 provided in the chamber 250 maintains the temperature inside the chamber 250 at a high temperature so that the process gas falling during the deposition process is deposited on the substrate S by the temperature difference. To cool. Therefore, the stage 220 is provided with a cooling pipe 222 through which a coolant such as coolant is circulated to cool the temperature of the upper stage of the stage 220 in contact with the substrate S.

On the other hand, the discharge intermittent portion 240 is provided in the upper portion of the chamber 250. The discharge intermittent part 240 is a diffusion chamber 260 that provides a space in which the process gas is diffused in the chamber 250, and the vapor deposition process of the substrate S is performed while maintaining airtightness with the diffusion chamber 260. The deposition process chamber 270 is divided.

The discharge intermittent part 240 includes a partition wall 241 fixed to the upper part of the chamber 250, a shutter 243 driven to open and close the diffusion chamber 260, and an opening / closing driving part providing power to the shutter 243. 245 is provided.

The partition wall 241 of the discharge control unit 240 blocks the process gas supplied to the diffusion chamber 260 from proceeding to the deposition processing chamber 270 and reflects it toward the connection pipe 150.

Here, a detailed description of the discharge control unit 240 will be described later with reference to the accompanying drawings.

Subsequently, the diffusion chamber 260 includes a reflection diffusion unit 230 for reflecting and diffusing the process gas.

The reflective diffuser 230 is provided as a first reflective plate 232 radially expanded from an end of the connection pipe 150 that provides the process gas to the diffusion chamber 260. The first reflector 232 as described above allows the process gas sprayed from the connector 150 to be radially sprayed along the inner wall of the first reflector 232.

In addition, the first reflecting plate 232 reflects the process gas reflected from the upper surface of the partition wall 241 of the discharge control unit 240 toward the partition wall 241, so as not to face the upper inner wall of the chamber 250. The gas diffusion efficiency can be improved.

The reflective diffuser 230 configured as described above diffuses the process gas reflected by the partition wall 241 and provides the substrate S through the discharge intermittent 240 to improve the uniformity of the thickness of the thin film. Will be performed.

Hereinafter, the discharge control unit will be described in detail with reference to the accompanying drawings.

Figure 2 is an exploded perspective view showing the discharge intermittent portion of the organic material deposition apparatus according to an embodiment of the present invention, Figure 3a is a partially enlarged cross-sectional view showing a sealed state of the diffusion chamber of the organic material deposition apparatus according to the embodiment of the present invention, 3B is a partially enlarged cross-sectional view illustrating an open state of the diffusion chamber of the organic material deposition apparatus according to the embodiment of the present invention.

2 to 3B, the discharge intermittent part 240 of the organic material deposition apparatus according to the exemplary embodiment of the present invention includes a partition wall 241 fixed to the upper portion of the chamber 250.

In the partition wall 241, a plurality of first outlets 241a are formed at uniform intervals so that the process gas is uniformly dispersed and directed to the deposition processing chamber 270. The first outlet 241a is formed such that the diameter of the upper end of the first outlet 241a is larger than the diameter of the lower end of the first outlet 241a so as to smoothly discharge the process gas.

In addition, a plurality of second outlets 243a are installed in the shutter 243 adjacent to the partition 241 so as to communicate with the first outlet 241a of the partition 241 up and down when the diffusion chamber 260 is opened. Is formed. The second outlet 243a drives the shutter 243 to open the diffusion chamber 260, and the process gas diffuses through the first outlet 241a and the second outlet 243a into the deposition processing chamber 270. The diameter of the lower end of the second outlet (243a) is formed to be larger than the diameter of the upper end of the second outlet (243a).

As such, the diameter of the upper end of the first outlet 241a is larger than the diameter of the lower end of the first outlet 241a and the diameter of the lower end of the second outlet 243a is larger than the diameter of the upper end of the second outlet 243a. The process gas is quickly discharged from the diffusion chamber 260, and the process gas directed toward the deposition processing chamber 270 is discharged in a downward direction as it travels along the inner wall of the second outlet 243a.

On the other hand, the opening and closing drive unit 245 for transmitting power to the shutter 243 transmits power to the power transmission bar 245a connected to one side of the shutter 243 through the side wall of the chamber 250, the shutter 243 ) Is driven back and forth or left and right at the bottom of the partition wall 241 to open and close the diffusion chamber 260. Accordingly, the driving groove 243c is formed at one side of the shutter 243 so that the power transmission bar 245a is inserted and coupled thereto.

Here, the rail groove 241b is formed on the lower surface of the partition 241 to drive the shutter 243, and the rail 243b is formed on the upper surface of the shutter 243, so that the shutter 243 is the partition 241. It is driven while sliding (sliding) at the bottom of the).

As described above, the discharge intermittent part 240, which allows the diffusion chamber 260 to be opened and closed by the shutter 243, immediately blocks the process gas provided to the deposition chamber after the deposition process is completed, thereby minimizing unnecessary deposition of the film.

In addition, an airtight member 247 is further provided at an upper end of the second discharge port 243a of the shutter 243, and when the shutter 243 is driven, process gas flows between the partition wall 241 and the shutter 243. The loss of process gas generated can be reduced.

In addition, the airtight member 247 prevents wear of the lower surface of the partition wall 241 and the upper surface of the shutter 243 which may be generated by driving the shutter 243 by sliding at the lower end of the partition wall 241. In this way, it is possible to facilitate the management of the equipment.

The airtight member 247 may be installed along the moving direction of the shutter 243 or may be installed along the outer circumferential portion of the lower end of the first outlet 241a or the outer circumferential portion of the upper end of the second outlet 243a.

Hereinafter, another embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Here, the organic material deposition apparatus according to another embodiment of the present invention described below may be regarded as similar to the above-described organic material deposition apparatus and its configuration and function. Therefore, hereinafter, the same reference numerals are given to components similar in structure and function to the organic vapor deposition apparatus described above, and detailed description thereof will be omitted.

4 is a schematic view showing a deposition processing unit of an organic material deposition apparatus according to another embodiment of the present invention, Figure 5 is an exploded perspective view showing a reflective diffusion of the organic material deposition apparatus according to another embodiment of the present invention.

4 to 5, the deposition processing unit 200 of the organic material deposition apparatus according to another exemplary embodiment of the present invention may include an exhaust control unit 240 that divides the chamber 250 into a diffusion chamber 260 and a deposition processing chamber 270. ) And a reflection diffusion unit 230 provided in the diffusion chamber 260.

Here, the reflective diffuser 230 may be spaced apart from the first reflecting plate 232 radially extended from the end of the connecting pipe 150 supplying the process gas and the first reflecting plate 232 toward the side where the process gas is injected. The second reflecting plate 234 is disposed between the reflecting plate 232 and the discharge intermittent part 240.

Here, the second reflecting plate 234 may be radially coupled to the inner wall of the first reflecting plate 232 by the first support bar 234b or to the upper surface of the discharge control unit 240 although not shown. There will be.

In addition, a plurality of first through holes 234a are provided in the second reflecting plate 234 so that a part of the process gas injected from the connecting pipe 150 passes through the second reflecting plate 234 and is provided to the discharge intermittent part 240. Is formed. The first through hole 234a is to evenly provide the process gas injected from the connection pipe 150 to the lower portion of the region reflected by the second reflector 234.

When the process gas is injected into the reflective diffuser 230 configured as described above, part of the process gas passes through the first through hole 234a of the second reflecting plate 234, and the remaining process gas is the second reflecting plate 234. In the first reflecting plate 232 is reflected by the first order diffuse reflection.

In addition, the first reflecting plate 232 reflects the second-order diffusion reflecting the process gas reflected from the second reflecting plate 234 toward the discharge intermittent part 240.

As described above, the organic material deposition apparatus according to another embodiment of the present invention includes the reflection diffusion unit 230 to enable the first diffusion reflection and the second diffusion reflection, thereby increasing the diffusion density of the process gas to increase the efficiency of the deposition process. It can increase.

6 is a partial cross-sectional view showing a part of a deposition processing unit of an organic material deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the reflective diffusion unit 230 of the organic material deposition apparatus according to another embodiment of the present invention may include a first reflecting plate 232 radially extended from an end of the connecting pipe 150 supplying a process gas. The second reflecting plate 234 and the second reflecting plate 234, which are spaced apart from the first reflecting plate 232 and positioned between the first reflecting plate 232 and the discharge intermittent part 240, may be adjacent to the second reflecting plate 234. A plurality of third reflecting plate 238 is provided.

Here, the third reflecting plate 238 may be radially coupled to the inner wall of the first reflecting plate 232 by the second support bar 238b or to the upper surface of the discharge control unit 240 although not shown. There will be.

In addition, a plurality of process gases reflected by the first reflecting plate 232 and the second reflecting plate 234 may pass through the third reflecting plate 238 to be provided to the discharge intermittent part 240 in the third reflecting plate 238. The second through hole 238a is formed. The second through hole 238a is to provide the process gas reflected by the first reflecting plate 232 and the second reflecting plate 234 evenly under the region reflected by the third reflecting plate 238.

As such, the second reflecting plate 234 and the plurality of third reflecting plates 238 adjacent to the second reflecting plate 234 are disposed so that the process gas injected from the connecting pipe 150 is disposed below the connecting pipe 150. A part of the process gas passes through the first through hole 234a of the second reflecting plate 234, and a part of the process gas is provided to the discharge intermittent part 240, and the other part of the process gas is provided to the second reflecting plate 234. Reflected at 234 and reflected back to first reflector 232 (first order diffuse reflection).

Subsequently, the process gas reflected by the second reflector 234 is reflected from the first reflector 232 to the discharge intermittent part 240 (second order diffuse reflection). In addition, the process gas reflected from the first reflecting plate 232 and directed to the discharge intermittent part 240 is reflected by the third reflecting plate 238 adjacent to the second reflecting plate 234. Diffuse reflection is repeated.

Here, the number of the third reflecting plates 238 may be provided to be proportional to the area of the substrate. Therefore, the reflection diffuser 230 according to another embodiment of the present invention repeats the above-described first and second reflections in proportion to the number of the third reflecting plates 238 to diffusely reflect the process gas. .

As described above, by repeating diffuse reflection between the first reflecting plate 232, the second reflecting plate, and the plurality of third reflecting plates 238, the substrate S can be efficiently applied to a large area.

Hereinafter, an organic material deposition method according to an embodiment of the present invention will be described with reference to the accompanying drawings.

7 is a flowchart illustrating an organic material deposition method according to an embodiment of the present invention.

Referring to FIG. 7, first, in the organic material deposition apparatus according to the exemplary embodiment of the present invention, the door 210 of the chamber 250 is opened, and the substrate S is loaded into the deposition processing chamber 270 by the substrate transfer apparatus. 220) is seated on top.

As described above, when the substrate S is seated on the stage 220, the deposition processing chamber 270 forms a vacuum atmosphere of 10 ⁻⁷ torr or less by the vacuum exhaust unit 230.

Here, the vacuum exhaust unit 230 continues to vacuum while the process gas and the transfer gas are provided into the chamber 250 and the deposition process of the substrate S is performed to prevent the pressure in the chamber 250 from rising. Perform exhaust.

Next, the heater 120 provides thermal energy to the source container 112, the connection pipe 150, and the chamber 250. As the source container 112 is heated, the organic water source contained in the source container 112 is vaporized into a gaseous process gas (S10).

The transfer gas supply unit 130 provides a transfer gas to the connection pipe 150 to introduce the process gas of the source container 112 into the chamber 250. When the transfer gas is provided to the connection pipe 150, the flow controller 140 controls the flow rate of the transfer gas to advance the appropriate amount of the transfer gas.

As such, the transport gas passing through the flow controller 140 discharges the process gas staying in the source container 112 to the connection pipe 150 through the discharge pipe 116. Therefore, the process gas is supplied into the chamber 250 by the transport gas.

The process gas provided into the chamber 250 is intermittently discharged from the diffusion chamber 260 to the deposition processing chamber 270 by the discharge intermittent 240. Therefore, the process gas is reflected from the partition wall 241 of the discharge intermittent part 240 in the diffusion chamber 260, so that the process gas is directed to the reflective diffuser 230 provided in the diffusion chamber 260. At this time, as described above, the process gas is repeatedly diffused from the upper surface of the partition 241 and the reflection diffuser 240 (S30).

Next, the opening and closing driver 245 stretches the power transmission bar 245a coupled to one side of the shutter 243. As the power transmission bar 245a is expanded and contracted, the shutter 243 is driven so that the first outlet 241a of the partition 241 and the second outlet 243a of the shutter 243 communicate with each other. The process gas is diffused and discharged into the deposition processing chamber 270.

The process gas diffused as described above is provided to the substrate S through the discharge port 242 of the discharge control unit 240.

In this way, the process gas provided to the substrate S reaches the substrate S cooled by the cooling pipe 222 provided in the stage 220, and the temperature difference between the inside of the chamber 250 and the substrate S is increased. By forming a thin film on the surface of the substrate (S) is deposited. (S40)

In this manner, the substrate S is deposited with a thin film constituting one layer constituting the organic EL display.

As described above, the organic EL display has a multilayer structure. Therefore, the organic material deposition process is repeated by repeating the deposition process of the thin film constituting one layer as described above while the organic material source is replaced to form the R, G, B pixels, and electrodes constituting the organic EL display. This is the finish.

When the deposition process is completed as described above, the deposition processing chamber 270 is restored to atmospheric pressure again, and the door 210 is opened to discharge the thin film deposited substrate S by the substrate transfer device.

As described above, the organic material deposition apparatus and the deposition method using the same according to the present invention, the process gas is uniformly provided on the entire area without being biased to one side of the substrate, thereby having an effect of uniformly depositing the thickness of the thin film.

In addition, there is no need to install a separate device for rotating or driving the source and the stage on which the substrate is seated in order to uniformly deposit the thickness of the thin film. It has the effect of providing convenience to repair.

Claims (16)

A source supply unit supplying a process gas generated by vaporization of an organic material to be deposited on a substrate; A chamber including a diffusion chamber providing a diffusion space of the process gas supplied from the source supply unit and a deposition processing chamber providing an organic material deposition space of the substrate; A reflection diffuser for reflecting and diffusing the process gas in the diffusion chamber; And a discharge intermittent part which maintains airtightness between the diffusion chamber and the deposition processing chamber and controls the discharge of the process gas supplied to the diffusion chamber. The method of claim 1, wherein the reflective diffusion portion And a first reflecting plate extending from an end of a connecting pipe for providing the process gas to the diffusion chamber. The method of claim 2, wherein the reflective diffusion portion And a second reflecting plate spaced apart from the first reflecting plate toward the side from which the process gas is injected, and positioned between the first reflecting plate and the discharge control unit. The organic material deposition apparatus of claim 3, wherein the first reflecting plate and the second reflecting plate are radially provided. The organic material deposition apparatus of claim 4, wherein a plurality of through holes are formed in the second reflecting plate such that a part of the process gas injected from the connecting pipe passes through the second reflecting plate and is provided to the discharge control unit. The method of claim 5, wherein the reflective diffusion portion And a plurality of third reflecting plates adjacent to the second reflecting plate. The method of claim 1, wherein the discharge intermittent portion is fixed to the inner wall of the chamber to provide a diffusion chamber, a shutter provided adjacent to the partition wall, characterized in that it comprises an opening and closing drive unit for providing power to the shutter. Organic material deposition apparatus. The organic material deposition apparatus of claim 7, wherein a plurality of first outlets through which the process gas is discharged is formed in the barrier rib, and a plurality of second outlets are formed in the shutter to communicate with the first outlet. The organic material according to claim 8, wherein the diameter of the diffusion chamber side is larger than the diameter of the substrate side, and the diameter of the substrate discharge side is larger than the diameter of the diffusion chamber side. Deposition apparatus. 8. The organic material deposition apparatus according to claim 7, wherein the barrier rib and the shutter are engaged by a rail structure and are driven by the opening / closing driving part. 8. The organic material deposition apparatus according to claim 7, wherein an airtight member is further provided between the partition wall and the shutter. Vaporizing the organic material to be deposited on the substrate to generate a process gas; Supplying the process gas into a chamber on which the substrate is seated; Sealing the process gas into a diffusion chamber which is a diffusion space of the process gas, and reflecting and spreading the process gas; and Opening the diffusion chamber and discharging the diffusion chamber to a deposition processing chamber in which deposition of the substrate is performed. 13. The diffusion chamber as set forth in claim 12, wherein the diffusion chamber is provided with a reflection diffusion unit having a first reflection plate extending from an end of a connecting pipe for providing the process gas to the diffusion chamber. And diffusing a portion of the process gas reflected from the discharge intermittent portion provided between the diffusion chamber and the deposition processing chamber by reflecting it from the first reflecting plate. The method of claim 12, wherein the reflective diffusion portion is spaced apart from the first reflecting plate is located between the first reflecting plate and the discharge intermittent portion, further comprising a second reflecting plate provided on the side of the process gas is injected, And reflecting the process gas injected from the connection pipe in the second reflecting plate and reflecting the process gas reflected in the second reflecting plate in the first reflecting plate. The method of claim 14, wherein the reflection diffuser further includes a plurality of third reflector plates adjacent to the second reflector to reflect the process gas in the diffusion chamber to diffuse the process gas. The method of claim 12, wherein the diffusion chamber is blocked from the deposition processing chamber when the deposition process of the substrate is completed.

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