JP4172206B2 - Organic film forming equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an organic film forming apparatus for forming an organic film by adsorbing an organic raw material gasified in a vacuum chamber to a substrate. Specifically, the flow of the source gas is controlled by blowing the gas from the side to the source gas flow toward the substrate, and the source gas is supplied to the entire surface of the substrate.
[0002]
[Prior art]
An organic EL (electroluminescence) element is a light emitting material using an organic substance in a light emitting layer. This organic EL element constitutes display devices of various sizes such as flat panel displays used in computers and television receivers, mobile phone displays, and mobile terminal displays called PDA (Personal Digital Assistants). It is used as a light emitting material and a light emitting element such as a light emitting diode.
[0003]
FIG. 8 is an explanatory view showing an example of the structure of the organic EL element. The organic EL element 101 is obtained by sequentially laminating an ITO (Indium-Tin Oxide) transparent electrode 103 as an anode, an organic film 104, and a back electrode 105 as a cathode on a transparent substrate 102 such as glass. The organic film 104 is formed by sequentially stacking a hole injection layer 104a, a hole transport layer 104b, a light emitting layer 104c, an electron transport layer 104d, and an electron injection layer 104e from the ITO transparent electrode 103 side.
[0004]
When a voltage is applied between the ITO transparent electrode 103 and the back electrode 105, positive charges (holes) are injected from the ITO transparent electrode 103, and negative charges (electrons) are injected from the back electrode 105. Moving. Then, electrons and holes are recombined with a certain probability in the light emitting layer 104c, and light having a predetermined wavelength is generated during the recombination.
[0005]
Note that the organic film 104 has a structure in which the hole injection layer 104a and the hole transport layer 104b are formed as one layer, an electron transport layer 104d and the electron injection layer 104e in one layer, and the light emitting layer 104c. There is a structure in which the electron transport layer 104d and the electron injection layer 104e are composed of one layer.
[0006]
FIG. 9 is a plan view showing an outline of an organic EL color display configured using such an organic EL element, and FIG. 10 is a perspective view of a main part of the organic EL color display. In the organic color display 106, ITO transparent electrodes 103 are formed in stripes on a transparent substrate 102. Further, the organic film 104 is formed in a stripe shape so as to be orthogonal to the ITO transparent electrode 103, and the back electrode 105 is formed on the organic film 104. The ITO transparent electrode 103, the organic film 104, and the back electrode 105 are arranged in a matrix. Deploy. Thereby, the organic film 104 at the intersection of the ITO transparent electrode 103 to which the voltage is applied and the back electrode 105 emits light.
[0007]
Then, as the organic film 104, an organic film 104R that emits light in red (R), an organic film 104G that emits light in green (G), and an organic film 104B that emits light in blue (B) are arranged in order, thereby forming RGB pixels. Color display is possible.
[0008]
Now, the formation of an organic film using a low molecular organic substance has conventionally used a vacuum deposition method. The vacuum deposition method is a method in which a raw material is heated and evaporated in a high vacuum, and a thin film is formed by adsorbing the raw material on a substrate facing an evaporation source.
[0009]
FIG. 11 is an overall configuration diagram of a conventional organic film forming apparatus using a vacuum deposition method, FIG. 11 (a) is a side sectional view of the organic film forming apparatus, and FIG. 11 (b) is a top view of the inside of the organic film forming apparatus. It is the top view seen from.
[0010]
The vacuum chamber 107 is connected to a vacuum pump (not shown), and the inside can be evacuated to high vacuum. Here, the degree of vacuum in the vacuum chamber 107 in the vacuum deposition method is 10^-3-10^-FourIt is about Pa (Pascal).
[0011]
The evaporation source 108 is a heating source for evaporating a raw material, here an organic material, and includes resistance heating, electron beam heating, infrared heating, high-frequency induction heating, etc., but resistance heating is generally used for organic films. The resistance heating is a method in which an organic raw material is vaporized or sublimated by indirect heating of the organic material by injecting a powdery organic raw material into the open container 109 and causing the resistance heat of the open container 109 by energizing the open container 109. is there.
[0012]
A substrate 110 on which an organic film is formed (corresponding to the transparent substrate 102 on which the ITO transparent electrode 103 shown in FIG. 8 and the like is formed) is attached to a substrate support 111 and is disposed opposite to the evaporation source 108. The substrate support 111 is rotated around the rotation shaft 112 by a drive mechanism (not shown). The evaporation source 108 is disposed at a position shifted from the rotation axis 112 of the substrate support base 111.
[0013]
When the inside of the chamber 107 is set to a high vacuum and the organic material is vaporized or sublimated by the evaporation source 108, the gasified organic raw material reaches the substrate 110 in a beam shape. At this time, the organic material is adsorbed on the entire surface of the substrate 110 by rotating the substrate support 111.
[0014]
FIG. 12 is an overall configuration diagram of another conventional organic film forming apparatus using a vacuum deposition method, FIG. 12 (a) is a side sectional view of the organic film forming apparatus, and FIG. 12 (b) is an internal view of the organic film forming apparatus. It is the top view which looked at from the upper surface.
[0015]
This example is mainly used when the substrate is large, and a plurality of evaporation sources 108 are arranged in a line so that the gasified organic material can be adsorbed over the entire width of the substrate 110. Then, the organic raw material is adsorbed on the entire surface of the substrate 110 as a mechanism for sliding the substrate support 113 to the left and right.
[0016]
[Problems to be solved by the invention]
However, providing a rotation mechanism or a slide mechanism for the substrate support in a vacuum system requires a complicated mechanism, resulting in a problem that the cost of the apparatus increases. In general, organic raw materials have a property of being easily decomposed at a high temperature, but the substrate temperature rises due to heat radiation from the vapor deposition source, which adversely affects the quality of the organic film. However, it is difficult to incorporate a mechanism for cooling the substrate into the substrate support that moves in a vacuum, and there is a problem that the substrate that is necessary for producing a high-quality organic film cannot be cooled.
[0017]
The present invention has been made to solve such a problem, and an object thereof is to provide an organic film forming apparatus capable of adsorbing an organic raw material on the entire surface of a substrate without providing a mechanically movable portion. To do.
[0018]
[Means for Solving the Problems]
In order to solve the above-described problems, an organic film forming apparatus according to the present invention is an organic film forming apparatus that forms an organic thin film on a substrate, and a vacuum chamber in which the substrate is accommodated, and a substrate facing the substrate in the vacuum chamber. And a directional control gas discharge means for discharging the gasified organic raw material and a direction control gas discharge means for supplying the gas from the side toward the flow of the raw material gas discharged from the raw material gas discharge means toward the substrate. It is provided.
[0019]
In the organic film forming apparatus according to the present invention, the source gas released from the source gas discharge means flows toward the substrate and deposits on the substrate to form the organic film. The flow direction of the source gas is controlled by blowing the gas from the side with respect to the flow of the source gas discharged from the source gas discharge means. Accordingly, the organic material can be uniformly deposited by supplying the source gas to the entire surface of the substrate without moving the substrate side.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of an organic film forming apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view of the organic film forming apparatus 1 of the first embodiment, and FIG. 2 is a plan view of the inside of the organic film forming apparatus 1 of the first embodiment as viewed from above. The organic film forming apparatus 1 according to the first embodiment is an apparatus for forming an organic thin film on a substrate 3 using a vacuum chamber 2 by using a vacuum chamber 2, and is a gasified organic supplied to the substrate 3. The flow of the source gas is controlled in accordance with the substrate 3 by discharging an inert gas or the like from the side toward the source flow. Here, the substrate 3 is a substrate in which an ITO transparent electrode is formed on the transparent glass substrate 102 described in FIG. 8 or the like, or a TFT (Thin Film Transistor) substrate not shown.
[0021]
The organic film forming apparatus 1 includes a substrate support 4, an evaporation source 5, a first gas introduction pipe 6 a, and a second gas introduction pipe 6 b in a vacuum chamber 2. An exhaust pipe 7 is connected to the vacuum chamber 2, and the exhaust pipe 7 is connected to a vacuum pump (not shown) to evacuate the vacuum chamber 7. The substrate support 4 is provided on the ceiling in the vacuum chamber 2. The substrate 3 is supported by the substrate support 4 with the organic film forming surface facing downward. In addition, the suction port of the exhaust pipe 7 is also provided in the ceiling portion in accordance with the substrate support 4.
[0022]
Although not shown, the substrate support 4 is provided with cooling means for cooling the substrate 3 by circulating cooling water through a water cooling pipe 8. Here, the substrate support 4 is fixed in the vacuum chamber 2. For example, when the substrate support 4 is provided with cooling means by water cooling, the water cooling tube 8 can be drawn out with a simple structure.
[0023]
The evaporation source 5 constituting the source gas discharge means evaporates or sublimates the organic source by the resistance heating method, and is provided on the bottom surface in the vacuum chamber 2 so as to face the substrate 3. The evaporation source 5 includes an open container 5a such as a crucible for containing an organic raw material, and an energization mechanism (not shown) that supplies current to the open container 5a.
[0024]
The open container 5a is made of a material such as Mo (molybdenum) or Ta (tantalum) which has a high melting point and does not react with various organic raw materials. When the opening container 5a is energized, the opening container 5a generates resistance and generates heat. As a result, when the powdered organic raw material is put into the open container 5a and energized, the open container 5a generates heat, whereby the organic raw material is indirectly heated and vaporized or sublimated to generate gas. This organic raw material gas is referred to as a raw material gas.
[0025]
A plurality of evaporation sources 5 having such a configuration are arranged in series as shown in FIG. The length in which the evaporation sources 5 are arranged matches the width of the substrate 3. The raw material gas generated in the evaporation source 5 passes through the vacuum chamber 2 with a predetermined degree of vacuum (for example, 10²-10^ThreeBy raising to Pa), it rises toward the substrate 3. For this reason, by providing the plurality of evaporation sources 5 in a line according to the width of the substrate 3, the source gas can be supplied to the entire width of the substrate 3.
[0026]
The first gas introduction pipe 6a and the second gas introduction pipe 6b constituting the direction control gas discharge means are provided at positions facing each other across the plurality of evaporation sources 5 arranged in a row. The first gas introduction pipe 6 a has a discharge port 9 a at a position where the gas is blown from the side with respect to the upward flow of the source gas generated in the evaporation source 5. The second gas introduction pipe 6b has a discharge port 9b at a position facing the discharge port 9a. These discharge ports 9a and 9b are provided so as to be positioned in the vicinity of the upward flow of the raw material gas generated in the evaporation source 5.
[0027]
As shown in FIG. 2, the discharge port 9a of the first gas introduction pipe 6a and the discharge port 9b of the second gas introduction pipe 6b are configured to release gas with a width corresponding to the length in which the evaporation sources 5 are arranged. Have. Each discharge port 9a, 9b has a structure in which, for example, a plurality of pipe-like tubes are arranged in a row so that gas can be discharged in a planar shape. Moreover, you may comprise with one set of pipe | tube opened by the width | variety matched with the length in which the evaporation sources 5 are located in a line.
[0028]
The first gas introduction pipe 6 a and the second gas introduction pipe 6 b are connected to the tank 10. This tank 10 has N which does not react with various organic raw materials.₂Gas (inert gas) such as (nitrogen) or Ar (argon) is introduced. Control valves 11a and 11b are provided in the first gas introduction pipe 6a and the second gas introduction pipe 6b, respectively. These control valves 11a and 11b perform switching of presence / absence of supply of the inert gas from the tank 10 to the first gas introduction pipe 6a and the second gas introduction pipe 6b, and control of the flow rate of the inert gas.
[0029]
Each of the first gas introduction pipe 6a and the second gas introduction pipe 6b is provided with a heater 12 constituting a heating means. The heater 12 controls the temperature of the inert gas flowing through the first gas introduction pipe 6a and the second gas introduction pipe 6b. The vacuum chamber 2 is provided with a pressure gauge 13. The output of the pressure gauge 13 is fed back, and control of keeping the inside of the vacuum chamber 2 at a predetermined degree of vacuum is performed by controlling a valve (not shown) provided in the exhaust pipe 7.
[0030]
FIG. 3 is an explanatory diagram showing the operation of the organic film forming apparatus 1 according to the first embodiment, and the operation of the organic film forming apparatus 1 according to the first embodiment will be described below. First, the substrate 3 is attached to the substrate support 4 in the vacuum chamber 2. Usually, the vacuum chamber 2 has a structure that can be opened and closed in order to load and unload the substrate 3. First, the vacuum chamber 2 is opened and the substrate 3 is attached to the substrate support 4. Moreover, an organic raw material is put into the open container 5 a of each evaporation source 5. Here, the organic raw material put into each evaporation source 5 is the same kind.
[0031]
After the vacuum chamber 2 is closed and kept airtight, evacuation is performed with a vacuum pump (not shown) to keep the vacuum chamber 2 at a predetermined degree of vacuum. The pressure in the vacuum chamber 2 is monitored by a pressure gauge 13, and control is performed to keep the pressure in the vacuum chamber 2 that changes due to the supply of the raw material gas constant.
[0032]
Next, the opening container 5a is energized, and the organic raw material is indirectly heated by the heat generated by the opening container 5a to be vaporized or sublimated. At this time, the temperature of the open container 5a and the energization current value to the open container 5a are monitored, and the energization value and the like are controlled so that the temperature at which the organic raw material is vaporized or sublimated is maintained.
[0033]
In the step of generating a raw material gas by vaporizing or sublimating the organic raw material, first, an inert gas is supplied from the tank 10 to the first gas introduction pipe 6a, and the inert gas is supplied to the second gas introduction pipe 6b. The control valves 11a and 11b are controlled so as not to be supplied. Thereby, the inert gas is discharged from the discharge port 9a of the first gas introduction pipe 6a.
[0034]
  When the inside of the vacuum chamber 2 is exhausted from the exhaust pipe 7 to be evacuated, the source gas generated in the evaporation source 5 rises toward the substrate 3. At this time,The vacuum chamber 2 has a predetermined degree of vacuum (for example, 10 ² -10 ^Three Pa)The source gas rising from the evaporation source 5 toward the substrate 3 by discharging the inert gas from the side toward the source gas flow from the discharge port 9a of the first gas introduction pipe 6a is shown in FIG. As shown to (a), it moves toward diagonally upward of the direction opposite to the 1st gas introduction pipe | tube 6a which has discharge | released the inert gas, and reaches | attains the board | substrate 3. As shown in FIG.
[0035]
At this time, the flow rate of the inert gas discharged from the discharge port 9a of the first gas introduction pipe 6a is adjusted so that the flow of the source gas is within the size of the substrate 3. Note that the arrival position of the source gas can be moved by controlling to increase or decrease the flow rate of the inert gas discharged from the discharge port 9a of the first gas introduction pipe 6a.
[0036]
Next, by controlling the control valves 11a and 11b, the supply of the inert gas to the first gas introduction pipe 6a is stopped, and the inert gas is supplied from the tank 10 to the second gas introduction pipe 6b. An inert gas is discharged from the outlet 9b.
[0037]
As a result, the source gas rising from the evaporation source 5 toward the substrate 3 is obliquely upward in the direction opposite to the second gas introduction pipe 6b that discharges the inert gas, as shown in FIG. To the substrate 3.
[0038]
At this time, the flow rate of the inert gas discharged from the discharge port 9b of the second gas introduction pipe 6b is adjusted so that the flow of the source gas is within the size of the substrate 3. Note that the arrival position of the source gas can be moved by controlling to increase or decrease the flow rate of the inert gas discharged from the discharge port 9b of the second gas introduction pipe 6b.
[0039]
Thus, by providing the plurality of evaporation sources 5 in a line in accordance with the width of the substrate 3, the source gas can be supplied to the entire width of the substrate 3. Further, by alternately discharging the inert gas from the discharge port 9a of the first gas introduction pipe 6a and the inert gas from the discharge port 9b of the second gas introduction pipe 6b, a beam of the source gas is obtained. The flow can be swung left and right in the length direction of the substrate 3. Therefore, since the source gas can reach the entire surface of the substrate 3 without moving the substrate 3, the organic source can be uniformly deposited on the substrate 3.
[0040]
Now, since the organic raw material can be uniformly deposited without moving the substrate 3, the substrate support 4 can be fixed to the vacuum chamber 2. Therefore, the structure of the device can be simplified. And the board | substrate support stand 4 can be equipped with the cooling means using the water cooling tube 8, for example. In general, since the organic raw material has a property of being easily decomposed at a high temperature, by cooling the substrate 3 during film deposition, the organic raw material is prevented from being decomposed, and as a result, a good organic film can be formed.
[0041]
Further, as described above, when supplying the inert gas, the first gas introduction pipe 6a and the second gas introduction pipe 6b are heated by the heater 12 so that the temperature of the inert gas is the vaporization or sublimation temperature of the organic raw material. The temperature is controlled to be close to. This prevents the vaporized or sublimated source gas from solidifying.
[0042]
4 is an overall configuration diagram of the organic film forming apparatus 14 according to the second embodiment. FIG. 4A is a side sectional view of the organic film forming apparatus 14, and FIG. It is the top view seen from the upper surface.
[0043]
Similar to the organic film forming apparatus 1 of the first embodiment, the organic film forming apparatus 14 includes a substrate support 4 in the vacuum chamber 2. The substrate support 4 is fixed to the ceiling of the vacuum chamber 2 and has a cooling means to which, for example, a water cooling tube 8 is connected. The vacuum chamber 2 is provided with an exhaust pipe 7, which is connected to a vacuum pump (not shown).
[0044]
The evaporation source 15 is provided on the bottom surface of the vacuum chamber 2 so as to face the substrate 4 supported by the substrate support 4. One evaporation source 15 is provided at a position facing the center of the substrate 3. The configuration of the evaporation source 15 is to vaporize or sublimate the organic raw material by the resistance heating method as in the first embodiment. The open container 15a such as a crucible for storing the organic raw material and the open container 15a are energized. An energization mechanism (not shown) is provided.
[0045]
The vacuum chamber 2 is provided with a first gas introduction pipe 16a, a second gas introduction pipe 16b, a third gas introduction pipe 16c, and a fourth gas introduction pipe 16d. The first gas introduction pipe 16 a, the second gas introduction pipe 16 b, the third gas introduction pipe 16 c, and the fourth gas introduction pipe 16 d are arranged on a circumference around the evaporation source 15. The first gas introduction pipe 16a, the second gas introduction pipe 16b, the third gas introduction pipe 16c, and the fourth gas introduction pipe 16d are arranged at intervals of, for example, 45 degrees, and the first gas introduction pipe 16a and the third gas introduction pipe 16c face each other, and the second gas introduction pipe 16b and the fourth gas introduction pipe 16d face each other.
[0046]
The first gas introduction pipe 16 a has a discharge port 17 a at a position where the gas is blown from the side with respect to the upward flow of the source gas generated in the evaporation source 15. The third gas introduction pipe 16c has a discharge port 17c at a position facing the discharge port 17a. The second gas introduction pipe 16b has a discharge port 17b at a position where the gas is blown from the side with respect to the upward flow of the source gas generated in the evaporation source 15. The fourth gas introduction pipe 16d has a discharge port 17d at a position facing the discharge port 17b. These discharge ports 17a, 17b, 17c and 17d are provided so as to be located in the vicinity of the upward flow of the source gas generated in the evaporation source 15.
[0047]
The first gas introduction pipe 16 a, the second gas introduction pipe 16 b, the third gas introduction pipe 16 c and the fourth gas introduction pipe 16 d are connected to the tank 10. The tank 10 is filled with an inert gas. Control valves 18a, 18b, 18c and 18d are provided in the first gas introduction pipe 16a, the second gas introduction pipe 16b, the third gas introduction pipe 16c and the fourth gas introduction pipe 16d, respectively. . These control valves 18a, 18b, 18c, and 18d perform switching of whether or not the inert gas is supplied from the tank 10 and controlling the flow rate of the inert gas.
[0048]
Each of the first gas introduction pipe 16a, the second gas introduction pipe 16b, the third gas introduction pipe 16c, and the fourth gas introduction pipe 16d is provided with a heater 12 constituting a heating means. The heater 12 controls the temperature of the inert gas flowing through the first gas introduction pipe 16a, the second gas introduction pipe 16b, the third gas introduction pipe 16c, and the fourth gas introduction pipe 16d.
[0049]
5 and 6 are explanatory views showing the operation of the organic film forming apparatus 14 of the second embodiment, and the operation of the organic film forming apparatus 14 of the second embodiment will be described below. First, the steps up to vaporizing or sublimating the organic raw material to generate the raw material gas are the same as those in the first embodiment, but in the second embodiment, there is only one evaporation source 15.
[0050]
In the step of generating a raw material gas by vaporizing or sublimating the organic raw material, first, an inert gas is supplied from the tank 10 to the first gas introduction pipe 16a, and an inert gas is supplied to the other gas introduction pipes. The control valves 18a to 18d are controlled so as not to occur. Thereby, as shown to Fig.5 (a), an inert gas discharge | releases from the discharge port 17a of the 1st gas introduction pipe | tube 16a.
[0051]
Thereafter, as shown in FIGS. 5B to 5C, the gas is supplied in the order of the second gas introduction pipe 16b, the third gas introduction pipe 16c, and the fourth gas introduction pipe 16d, and the respective discharges are performed. An inert gas is discharged from the outlets 17b to 17d.
[0052]
  When the inside of the vacuum chamber 2 is exhausted from the exhaust pipe 7 to be evacuated, the source gas generated in the evaporation source 15 rises toward the substrate 3. At this time,The vacuum chamber 2 has a predetermined degree of vacuum (for example, 10 ² -10 ^Three Pa)When the inert gas is released in the order of the first gas introduction pipe 16a, the second gas introduction pipe 16b, the third gas introduction pipe 16c, and the fourth gas introduction pipe 16d, as shown in FIG. Rises like drawing a circle. Therefore, since the source gas can reach the entire surface of the substrate 3 without moving the substrate 3, the organic source can be uniformly deposited on the substrate 3.
[0053]
In the second embodiment, the number of gas introduction pipes is four. However, if three or more gas introduction pipes are provided, the inert gas is discharged in order, so that the flow of the raw material gas for drawing a circle is increased. Can be made.
[0054]
In the first embodiment and the second embodiment described above, the organic raw material is vaporized or sublimated using the resistance heating method. However, the raw material gas discharge means is generated outside the vacuum chamber 2. Alternatively, the vacuum chamber 2 may be provided with an injector that discharges the organic raw material gas.
[0055]
Further, the inert gas is used as the gas for controlling the direction of the raw material gas. However, if there is a gas having a function of connecting the molecules of the organic raw material adsorbed on the substrate 3, such a gas is used. Also good.
[0056]
Note that when a color display shown in FIG. 9 or the like is formed, an organic film is formed using a mask. FIG. 7 is a cross-sectional view showing an example of a film deposition process using a mask. The mask 20 has a striped pattern 21. A magnet is used to bring the mask 20 into close contact with the substrate 3. That is, the mask 20 is made of a magnetic material, and a magnetizing member 22 made of a permanent magnet or an electromagnet is provided on the substrate support 4 in the mechanism for holding the substrate 3, for example, the organic film forming apparatus 1 shown in FIG. Then, by placing the substrate 3 on the magnetizing member 22 and placing the mask 20 on the substrate 3, the mask 20 is in close contact with the substrate 3 by the magnetic force of the magnetizing member 21.
[0057]
In order to form R, G, and B organic films, the mask 20 is first attached at a predetermined position to form the organic film 104R shown in FIG. 10, and then the attachment position of the mask 20 is shifted by 1/3 pitch. The organic film 104G is formed, and then the mounting position of the mask 20 is shifted by 1/3 pitch to form the organic film 104B. In the organic film forming apparatus of the first embodiment and the second embodiment, the mask 20 is attached downward. This prevents dust from adhering to the substrate 3.
[0058]
【The invention's effect】
As described above, the present invention provides an organic film forming apparatus for forming an organic thin film on a substrate. Source gas discharge means for discharging the raw material, and direction control gas discharge means for supplying gas from the side toward the flow of the raw material gas discharged from the source gas discharge means toward the substrate are provided.
[0059]
Accordingly, the organic material can be uniformly deposited by supplying the source gas to the entire surface of the substrate without moving the substrate side. Accordingly, since a movable mechanism for moving the substrate to the vacuum chamber is not necessary, the apparatus configuration can be simplified and the cost of the apparatus can be reduced. In addition, by not moving the substrate, it is easy to incorporate a mechanism for cooling the substrate, and the substrate necessary for forming a high-quality organic film can be cooled.
[Brief description of the drawings]
FIG. 1 is a side sectional view of an organic film forming apparatus according to a first embodiment.
FIG. 2 is a plan view of the inside of the organic film forming apparatus according to the first embodiment as viewed from above.
FIG. 3 is an explanatory diagram showing an operation of the organic film forming apparatus according to the first embodiment.
FIG. 4 is an overall configuration diagram of an organic film forming apparatus according to a second embodiment.
FIG. 5 is an explanatory diagram showing the operation of the organic film forming apparatus according to the second embodiment.
FIG. 6 is an explanatory diagram showing an operation of the organic film forming apparatus according to the second embodiment.
FIG. 7 is a cross-sectional view showing an example of a film deposition process using a mask.
FIG. 8 is an explanatory diagram showing an example of the structure of an organic EL element.
FIG. 9 is a plan view showing an outline of an organic EL color display.
FIG. 10 is a perspective view of a main part of an organic EL color display.
FIG. 11 is an overall configuration diagram of a conventional organic film forming apparatus.
FIG. 12 is an overall configuration diagram of another conventional organic film forming apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Organic film formation apparatus, 2 ... Vacuum chamber, 3 ... Substrate, 4 ... Substrate support stand, 5 ... Evaporation source, 5a ... Open container, 6a ... 1st Gas introduction pipe, 6b ... second gas introduction pipe, 7 ... exhaust pipe, 8 ... water cooling pipe, 9a, 9b ... discharge port, 10 ... tank, 11a, 11b,. Control valve, 12 ... heater, 13 ... pressure gauge, 14 ... organic film forming device, 15 ... evaporation source, 16a ... first gas introduction part, 16b ... second Gas introduction part, 16c ... third gas introduction part, 16d ... fourth gas introduction part, 17a, 17b, 17c, 17d ... discharge port, 18a, 18b, 18c, 18d ... Control valve

Claims (9)

In an organic film forming apparatus for forming an organic thin film on a substrate,
A vacuum chamber in which the substrate is stored;
A raw material gas releasing means provided opposite to the substrate in the vacuum chamber and for releasing the gasified organic raw material;
An organic film forming apparatus, comprising: a direction control gas discharge unit that supplies gas from the side toward the flow of the source gas discharged from the source gas discharge unit toward the substrate. A plurality of the source gas discharge means are arranged in a line,
2. The organic film forming apparatus according to claim 1, wherein the direction control gas discharge means is provided with discharge ports that discharge gas in a width corresponding to the length of the plurality of source gas discharge means rows. . 3. The organic film forming apparatus according to claim 2, wherein the direction control gas discharge means discharges gas alternately from the opposed discharge ports. The said direction control gas discharge | release means was provided with the several discharge port which discharge | releases gas toward the raw material gas in order from the circumference | surroundings of the said raw material gas discharge | release means with a dotted | punctate discharge | release source. Organic film forming equipment. 2. The organic film forming apparatus according to claim 1, wherein the source gas discharge means is an evaporation source that gasifies the organic source by heating. 2. The organic film forming apparatus according to claim 1, wherein the source gas discharge means is an injector that discharges a gasified organic source. 2. The organic film forming apparatus according to claim 1, wherein the direction control gas discharge means discharges an inert gas with respect to the organic raw material. 2. The organic film forming apparatus according to claim 1, wherein the vacuum chamber includes a substrate support having cooling means for cooling the substrate. 2. The organic film forming apparatus according to claim 1, wherein the direction control gas releasing means includes a heating means for controlling the temperature of the gas to be released.

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