KR20080022111A - 기판 상에 동전기적 침착 및 패터닝 공정을 위한 마스크 및방법 - Google Patents

기판 상에 동전기적 침착 및 패터닝 공정을 위한 마스크 및방법 Download PDF

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KR20080022111A
KR20080022111A KR1020077029468A KR20077029468A KR20080022111A KR 20080022111 A KR20080022111 A KR 20080022111A KR 1020077029468 A KR1020077029468 A KR 1020077029468A KR 20077029468 A KR20077029468 A KR 20077029468A KR 20080022111 A KR20080022111 A KR 20080022111A
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South Korea
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mask
substrate
conductive layer
particles
charged particles
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Korean (ko)
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오스카 카셀리브
브라이언 쥐. 루이스
마이클 마찌
바와 싱
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프라이즈 메탈즈, 인크.
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/105Using an electrical field; Special methods of applying an electric potential

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
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  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
KR1020077029468A 2005-05-18 2006-05-18 기판 상에 동전기적 침착 및 패터닝 공정을 위한 마스크 및방법 Ceased KR20080022111A (ko)

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CN103030097B (zh) * 2012-12-12 2015-06-17 中北大学 基于静电场自聚焦的圆片级低维纳米结构的制备方法
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US7678255B2 (en) 2010-03-16
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WO2006125089A2 (en) 2006-11-23
JP2008546182A (ja) 2008-12-18
US20060260943A1 (en) 2006-11-23
TW200706704A (en) 2007-02-16
EP1882056A2 (en) 2008-01-30
WO2006125089A3 (en) 2007-11-22

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