KR20070109705A - Chemical fume removal unit and wet processing equipment having the same - Google Patents

Abstract

A chemical fume removal unit and a wet processing apparatus having the same are provided to prevent generation of particles by removing easily fume caused by chemicals to be injected to a wafer. A nozzle(314) is formed to inject chemicals with constant pressure. A chemical fume removal part(320) is positioned at a periphery of the nozzle in order to remove chemical fume caused by the injection of the chemicals. The chemical fume removal part includes one or plural vacuum absorbing tubes(321) arranged in a predetermined interval from the nozzle, a vacuum pump(322) connected to the vacuum absorbing tube, and a control unit(323) connected electrically to the vacuum pump. The control unit controls the vacuum pump in order to form vacuum suction applied through the vacuum absorbing tube lower than the injection pressure of the chemicals.

Description

Chemical fume removal unit and wet processing equipment having the same

1 is a cross-sectional view showing a wet treatment facility having a chemical fume removing unit of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 is a cross-sectional view showing that the suction hole is further formed in the cover tube shown in FIG.

Figure 4 is a flow chart showing a chemical fume removal method of the wet treatment equipment having a chemical fume removal unit of the present invention.

** Explanation of Signs of Major Parts of Drawings **

100: chamber

200: wafer seating part

300: chemical fume removing unit

310: injection unit

312 cover tube

313: chemical supply pipe

314: nozzle

320: fume removal unit

321: vacuum suction pipe

322: vacuum pump

323 control unit

The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a chemical fume removing unit and a wet processing apparatus having the same to prevent the phenomenon of the fume due to the chemical supplied to the wafer in the wet etching or wet cleaning process.

Generally, semiconductor devices are fabricated by selectively or sequentially performing a number of processes such as diffusion, exposure, etching, cleaning, and packaging processes on a wafer.

For example, in the semiconductor device manufacturing process as described above, the SiO 2 thin film is deposited on the wafer through a deposition process.

Subsequently, an exposure process is performed to form the SiO ₂ thin film in a predetermined pattern. That is, in the exposure process, a PR (Photo Resist) is coated on the upper surface of the SiO ₂ thin film at a predetermined thickness, and the coated PR is exposed through a mask on which a predetermined pattern is formed.

Subsequently, an etching process is performed to form the SiO ₂ thin film in a predetermined pattern. PR applied to the upper surface of the thin film having a predetermined pattern formed through the etching process is removed through the PR strip. In addition, a cleaning process is performed to remove foreign substances on the active region and the wafer of the thin film formed during the etching process.

Here, the etching process is divided into a wet etching process and a dry etching process.

The wet etching process is a process of etching a SiO ₂ thin film using a chemical such as HF. Of course, the chemical used in the wet etching process may also be used in the wet cleaning process.

Meanwhile, the wet etching equipment used in the wet etching process is divided into a spray type having a nozzle capable of spraying a chemical such as HF to be supplied onto a wafer, and a dip type of immersing the wafer in a bath containing the chemical. do.

Here, in the case of the spray type wet etching equipment, the nozzle injects the chemical onto the wafer with a constant spray pressure.

At this time, most of the chemical injected from the nozzle is injected into the wafer, but at the same time, a fume due to the chemical injected is generated in the periphery of the nozzle from which the chemical is injected.

Accordingly, the fume generated at the periphery of the nozzle flows inside the chamber and is formed in a condensed state at a temperature lower than the temperature of the fume itself (for example, the outer surface of the nozzle). Deposited on top of the wafer.

As described above, when the fume is deposited on the upper surface of the wafer in a solid state, it becomes a main cause of particle generation on the wafer, and there is a problem in that process defects and product defects are generated.

Therefore, conventionally, the surface of the wafer is additionally cleaned to remove particles generated as described above.

However, in the above case, as the cleaning process is added, the process time is lengthened, and the physical or human loss input thereto is increased, resulting in a decrease in product yield.

Accordingly, the present invention has been made in order to solve the above problems, the first object of the present invention is a fume generated due to the chemical injected into the wafer when performing a wet etching or wet cleaning process for the wafer The present invention provides a chemical fume removing unit and a wet processing apparatus having the same, to easily remove and prevent particle generation caused by condensation of chemical fumes and falling on a wafer.

The second object of the present invention is to reduce the additional time of cleaning the wafer additionally due to particle generation after the wet etching or the wet cleaning of the wafer as described above, it is possible to shorten the process time to increase the product yield The present invention provides a chemical fume removing unit and a wet treatment apparatus having the same.

The present invention provides a chemical fume removing unit for achieving the above object.

The chemical fume removing unit is a nozzle in which the chemical is injected at a predetermined injection pressure,

Located near the nozzle, and includes a fume removal unit for removing the chemical fume (fume) generated by the injection of the chemical.

Here, the fume removing unit is provided with one or a plurality of vacuum suction pipes spaced apart from the nozzle, a vacuum pump connected to the vacuum suction pipe, and a control unit electrically connected to the vacuum pump, the control unit is Preferably, the vacuum pump is controlled such that the vacuum suction input provided to the vacuum suction tube is lower than the injection pressure of the chemical.

And, it is provided with a cover tube surrounding the nozzle, the end of the nozzle is exposed to the outside through one end of the cover tube, the vacuum suction tube is preferably disposed inside the cover tube.

In addition, it is preferable that a vacuum suction space is formed between the inner surface of the cover tube and the outer surface of the nozzle to communicate with the vacuum suction tube.

In addition, it is preferable that one or a plurality of suction holes communicated with the vacuum suction space in the cover tube.

In addition, the suction hole and the vacuum suction tube is preferably further provided with a tube connecting each other.

The present invention provides a wet processing apparatus for achieving the above object.

The wet processing apparatus includes a chamber in which a wafer is located inside, an injection unit installed in the vicinity of the chamber and injecting a chemical into the wafer, and connected to the injection unit to generate the chemical inside the chamber. It includes a fume removal unit for discharging the chemical fume (fume) generated by the injection.

Here, the injection unit is a chemical supply unit, one end is connected to the chemical supply unit, the other end is a chemical supply pipe located on the upper portion of the wafer, a nozzle mounted on the other end of the chemical supply pipe, the nozzle is mounted to the nozzle, It is preferable to provide an injection pressure sensor for measuring the injection pressure of the chemical injected from the.

And, the fume removing unit is disposed around the chemical supply pipe, one or a plurality of vacuum suction pipe disposed along the longitudinal direction of the chemical supply pipe, a vacuum pump connected to the vacuum suction pipe, and the vacuum pump to operate the It is preferably provided with a control unit for providing a vacuum suction input to the vacuum suction pipe, one end of the vacuum suction pipe is connected to the vacuum pump, the other end is preferably exposed around the circumference of the nozzle.

In addition, the control unit is electrically connected to the injection pressure sensor, it is preferable to set the vacuum suction input lower than the injection pressure of the chemical measured from the injection pressure sensor.

On the other hand, the injection unit is connected to the drive motor, the cover tube is one end is connected to the drive motor, the other end is located above the wafer, the chemical supply pipe disposed inside the cover tube, and one end of the chemical supply pipe A chemical supply unit, a nozzle mounted at the other end of the chemical supply pipe, and an injection pressure sensor installed at the nozzle to measure an injection pressure of the chemical injected from the nozzle, wherein the cover tube surrounds the nozzle. The end of the nozzle may be exposed to the outside through the other end of the cover tube, and a vacuum suction space may be formed between the inner surface of the cover tube and the outer surface of the nozzle to communicate with the vacuum suction tube.

Here, the fume removing unit is installed in the inside of the cover tube, one or more vacuum suction tube disposed around the chemical supply pipe, the vacuum pump connected to the vacuum suction tube, and the vacuum pump to operate the vacuum suction tube It is preferably provided with a control unit for providing a vacuum suction input, one end of the vacuum suction pipe is connected to the vacuum pump, the other end is positioned to be exposed to the vacuum suction space.

In addition, it is preferable that a plurality of suction holes communicated with the vacuum suction space in the cover tube.

In addition, the suction hole and the vacuum suction tube is preferably further provided with a tube connecting each other.

The controller may be electrically connected to the injection pressure sensor, and the vacuum suction input may be set lower than the injection pressure of the chemical measured from the injection pressure sensor.

In particular, the chemical may be either a wet etchant or a wet cleaning solution.

Hereinafter, with reference to the accompanying drawings, it will be described a preferred embodiment of the chemical fume removing unit of the present invention, and a wet etching equipment having the same.

1 is a cross-sectional view showing a wet treatment facility having a chemical fume removing unit of the present invention.

Referring to FIG. 1, the wet processing apparatus of the present invention includes a chamber 100 having a predetermined space formed therein, and a wafer rotating unit 200 rotating the wafer W at a predetermined speed inside the chamber 100. And a chemical fume removing unit 300 installed in the vicinity of the chamber 100.

The chemical fume removing unit 300 is connected to the injection unit 310 and the injection unit 310 to inject the chemical into the chamber 100, the chemical generated inside the chamber 100 It is provided with a fume removing unit 320 for discharging the fume (fume) of.

Here, the chemical may be HF, SC-1, SC-2, SPM solution. Therefore, the chemical may be a wet etchant for wet etching the wafer W or a wet cleaning solution used for wet cleaning.

Therefore, the chemical fume may be a fume generated due to the injection of a wet etchant or a wet cleaning solution. Hereinafter, the chemical will be referred to collectively as a wet etchant, and the chemical fume will be described as a wet etchant fume.

Next, the configuration of the chamber 100, the wafer rotating unit 200, the ejecting unit and the fume removing unit will be described in detail.

The chamber 100 includes an exhaust pipe 110 communicating with an interior of the chamber 100 at a side thereof, and a pump 120 installed in the exhaust pipe 100.

The wafer rotating part 200 is connected to a wafer chuck 210 positioned inside the chamber 100 and a lower end of the wafer chuck 210 and a rotating shaft protruding outward through a lower end of the chamber 100 ( And a rotary motor 230 connected to the rotary shaft 220 to rotate the wafer chuck 210 at a constant speed.

1 and 2, the injection unit 310 provides a driving force required for the lifting and lowering operation and the rotation operation, the drive motor 311 is installed in the vicinity of the chamber 100, and the drive motor ( One end is connected to the 311, the other end is located inside the chamber 100, the cover tube 312 is located on the top of the wafer chuck 210 and the cover tube 312 is disposed inside , A chemical supply pipe 313 disposed along the longitudinal direction of the cover pipe 312, a nozzle 314 mounted at one end of the chemical supply pipe 313, and spraying a wet etchant, and the chemical supply pipe 313. A chemical supply unit 315 connected to the other end of the liquid supply unit to supply a wet etchant, and an injection pressure sensor 316 mounted to the nozzle 314 to measure the injection pressure of the wet etchant injected from the nozzle 314. Equipped.

Here, a vacuum suction space 312a is formed at the other end of the cover tube 312 so that a predetermined space is formed around the nozzle 314.

In addition, the chemical supply pipe 313 may be embedded in the cover tube 312.

Next, the fume removing unit 320 is installed in the interior of the cover tube 312, a plurality of vacuum suction pipe 321 is located around the chemical supply pipe 313, and the vacuum suction pipe 321 and A vacuum pump 322 connected to the vacuum suction pipe 321 to provide a vacuum suction input, and a control unit 323 electrically connected to the vacuum pump 322 to control the operation of the vacuum pump 322.

Here, one end of the vacuum suction pipe 321 is connected to the vacuum pump 322, the other end 321a is exposed to the vacuum suction space (312a). Therefore, the tip 314a of the nozzle 314 is spaced a predetermined distance apart. The other end 321a of the vacuum suction pipe 321 exposed to the vacuum suction space 312a may be positioned in the same line with one end of the chemical supply pipe 313.

In addition, the controller 323 may be electrically connected to the injection pressure sensor 316, the pump 120, the rotation motor 230, and the driving motor 311 to control each operation.

In addition, the controller 323 may control the vacuum pump 322 to provide the vacuum suction input to the vacuum suction pipe 321 to be smaller than the injection pressure of the wet etchant.

Meanwhile, referring to FIG. 3, the cover tube 312 is formed with a suction hole 312b communicating with the vacuum suction space 312a, and the suction hole 312b is a separate vacuum suction tube 321 '. And tube 330 may be connected to each other.

Next will be described the operation and effect of the wet treatment equipment having the chemical fume removing unit of the present invention having the configuration as described above. In addition, the chemical fume removal method using the facility will be described.

1 and 2, the wafer W to be wet etched or wet cleaned is seated on top of the wafer chuck 210 by a transfer device (not shown). The wafer W is vacuum-adsorbed to the upper surface of the wafer chuck 210. The vacuum is provided to a vacuum hole (not shown) of the wafer chuck 210 from a vacuum not shown.

Subsequently, the controller 323 lowers the wafer chuck 210 to a predetermined position by using the rotary motor 230 and positions the inside of the chamber 100. Thus, the wafer W is placed at a position to be wet etched or wet cleaned.

In addition, the control unit 323 is set to the vacuum suction input to be provided to the vacuum suction pipe 321. The vacuum suction input is set to be lower than the injection pressure of the wet etchant measured from the injection pressure sensor 316 provided in the nozzle 314. This is to avoid affecting the spray path of the wet etchant injected from the nozzle 314 by the vacuum suction input provided to the vacuum suction pipe 321. The spray path of the wet etchant may follow a direction indicated by a dotted line from the tip 314a of the nozzle 314 shown in FIGS. 2 and 3.

Accordingly, the control unit 323 sets the injection pressure of the chemical to be supplied onto the wafer W (S100), and then sets the vacuum suction input to be lower than the set injection pressure of the chemical (S200).

Subsequently, the controller 323 transmits an electrical signal to the driving motor 311. The drive motor 311 rotates the cover tube 312 so that the other end of the cover tube 312 is positioned above the wafer (W). In addition, the driving motor 311 is lowered to a position where the tip 314a of the nozzle 314 partially protruded from the other end of the cover tube 312 becomes a predetermined height from the upper surface of the wafer W. The predetermined height may be about 10mm.

Subsequently, the rotary motor 230 receives the signal from the controller 323 and rotates the wafer chuck 210 at a constant speed (S300).

The chemical supply unit 315 supplies a predetermined amount of the wet etchant to the chemical supply pipe 313. The wet etchant supplied in this way is injected toward the upper surface of the wafer W at a predetermined injection pressure through the tip 314a of the nozzle 314 (S400).

Then, the fumes generated by the injected chemicals are sucked under vacuum and discharged to the outside.

This will be described in more detail.

The control unit 323 operates the vacuum pump 322 to operate by the set vacuum suction input. The vacuum pump 322 provides a vacuum suction input to the vacuum suction pipe 321.

Therefore, the wafer W may be wet etched or wet cleaned by a wet etchant sprayed through the tip 314a of the nozzle 314.

At this time, as shown in FIG. 2, the wet etchant fume F is generated around the sprayed wet etchant, that is, the side of the nozzle 314.

The wet etchant fume F generated as described above is forced into the vacuum suction space 312a having a predetermined space formed around the nozzle 314 by the vacuum suction input provided to the vacuum suction pipe 321 along the arrow direction indicated by the dotted line. Can be introduced. That is, since the vacuum suction input is formed in the vacuum suction space 312a, the fume F may flow into the vacuum suction space 312a. Subsequently, the fume F introduced into the vacuum suction space 312a is introduced into the vacuum suction pipe 321 and may be easily discharged to the outside.

Here, the vacuum suction space 312a provides a vacuum forming space in which a predetermined vacuum suction input is formed due to the vacuum suction input formed in the vacuum suction pipe 321. The vacuum forming space may induce a certain amount of the wet etchant fume (F) to be temporarily introduced and stored.

Accordingly, the fume F generated at the periphery of the nozzle 314 is condensed on the outer surface of the nozzle 314 lower than the temperature of the fume F, and the condensed fume is fixed to the upper surface of the wafer W. It is possible to efficiently suppress the particle generation generated by dropping and being deposited on the upper surface.

Here, since the vacuum suction input formed in the vacuum suction space 312a is set in the controller 323 so as to be lower than the injection pressure of the nozzle 314, the vacuum suction input formed in the vacuum suction space 312a causes the The separation of the jet path of the wet etchant jetted from the tip 314a of the nozzle 314 can be prevented.

Therefore, only the wet etchant fume F formed in the periphery of the nozzle 314 flows into the vacuum suction space 312a while the spray path of the wet etchant injected onto the upper surface of the wafer W is not changed. It is easily discharged through the vacuum suction pipe 321.

On the other hand, as shown in Figure 3, when the injection amount of the wet etchant injected into the wafer (W) through the nozzle 314 increases more than a certain amount, the wet etchant generated in the peripheral portion of the nozzle 314 The fume F may not be entirely introduced into the vacuum suction space 312a.

Therefore, the wet etchant fume F ′ which is not introduced into the vacuum suction space 312a may flow to the outside of the end of the cover tube 312.

At this time, the vacuum suction space (312a) is formed with a vacuum suction input the wet etchant fume (F ') flowing to the outside of the cover tube 312 through the suction hole (312b) perforated in the cover tube 312 the vacuum It can be forced into the suction space (312a).

2 and 3, the wet etchant fume F generated in the periphery of the nozzle 314 and the wet etchant fume F ′ flowing to the outer side of the cover tube 312 are described above. The vacuum suction input is introduced into the vacuum suction space 312a, and may be discharged to the outside through the vacuum suction pipes 321 and 321 '.

In particular, as shown in FIG. 3, in the case of connecting the suction hole 312b and the other end 321a 'of the vacuum suction pipe 321' to the tube 330, the suction hole 312b is provided around the suction hole 312b. Independently, a vacuum suction input may be provided.

Therefore, in this case, the wet etchant fume F ′ flowing outwardly of the cover tube 312 is directly introduced into the suction hole 312b provided with a vacuum suction input, so that the wet etchant It is also possible to introduce fumes (F ') more effectively.

Meanwhile, as described above, the fume F generated at the periphery of the nozzle 314 and the fume F ′ formed at the outer side of the cover tube 312 due to the injection of the wet etchant are easily removed and at the same time, the wet type The etchant is injected onto the top surface of the wafer W through the tip 314a of the nozzle 314 in a state where the ejection path thereof is not changed. The wafer W is wet etched or wet cleaned by the ejected wet etchant.

In addition, the controller 323 operates the pump 120, and the pump 120 is operated to introduce a wet etchant after wet etching or wet cleaning into the exhaust pipe 110 connected to both sides of the chamber 100. Drain to outside

Subsequently, the rotated wafer chuck 210 is stopped by the signal of the controller 323 and is returned to its original position including the cover tube 312. Then, the supply of the wet etchant and the vacuum suction input are released. Thereafter, the wafer W after the wet etching or the wet cleaning is drawn out of the chamber 100 by the transfer device (S600).

As such, the wafer W, which has finished wet etching and wet cleaning, may not undergo a separate cleaning process.

Because, when the wet etchant fumes (F, F ') generated in the peripheral portion of the nozzle 314 and the outer portion of the cover tube through the fume removing unit 320 in advance, the conventional fume is condensed to form a solid state Since particles can be prevented from falling to the upper surface of the furnace wafer W, it is not necessary to go through a separate cleaning process to remove the particles generated as described above.

As described above, according to the fume removing unit located at the periphery of the nozzle of the present invention, when the chemical used as the wet etchant is ejected from the nozzle, the fume of the chemical is removed in advance by removing the fume generated at the periphery of the nozzle. It is possible to prevent the generation of particles caused by the solids formed by condensation on the periphery of the nozzle falling on the wafer. Accordingly, when wet etching or wet cleaning the wafer, product defects due to the particles may be effectively prevented.

In addition, by preventing particle generation as described above, it is not necessary to go through the additional cleaning process of re-cleaning the wafer due to the conventional particle generation, thereby increasing the product yield through reducing the process time, In addition, there is an effect that can effectively reduce the manpower and material costs put into this.

Claims (10)

A nozzle in which the chemical is injected at a predetermined injection pressure; And A chemical fume removal unit is located around the nozzle, including a fume removal unit for removing the chemical fume (fume) generated by the injection of the chemical. The method of claim 1, The fume removing unit includes one or a plurality of vacuum suction tubes disposed at a predetermined distance from the nozzle, a vacuum pump connected to the vacuum suction tube, and a controller electrically connected to the vacuum pump. The control unit is a chemical fume removing unit, characterized in that for controlling the vacuum pump so that the vacuum suction input provided to the vacuum suction tube is lower than the injection pressure of the chemical. The method of claim 2, And a cover tube surrounding the nozzle, wherein an end of the nozzle is exposed to the outside through one end of the cover tube, and the vacuum suction tube is disposed inside the cover tube. The method of claim 3, wherein The chemical fume removing unit is formed between the inner surface of the cover tube and the outer surface of the nozzle is formed in communication with the vacuum suction tube. The method of claim 4, wherein The cover pipe is a chemical fume removing unit, characterized in that the one or a plurality of suction holes in communication with the vacuum suction space is perforated. The method of claim 5, Chemical fume removal unit further comprises a tube for connecting the suction hole and the vacuum suction tube to each other. A chamber in which the wafer is located; An injection unit installed in the vicinity of the chamber and injecting chemical into the wafer; And And a fume removal unit connected to the injection unit and discharging a chemical fume generated by the injection of the chemical generated inside the chamber. The method of claim 7, wherein The ejection portion is provided with a chemical supply portion, a chemical supply tube having one end connected to the chemical supply portion, the other end of which is located above the wafer, a nozzle mounted at the other end of the chemical supply tube, and mounted on the nozzle, and ejected from the nozzle. And a spray pressure sensor for measuring the spray pressure of the chemical. The method of claim 8, The fume removing unit is disposed around the chemical supply pipe, one or more vacuum suction pipes disposed along the length direction of the chemical supply pipe, a vacuum pump connected to the vacuum suction pipe, and the vacuum pump to operate the vacuum suction pipe. Is provided with a control unit for providing a vacuum suction input, One end of the vacuum suction pipe is connected to the vacuum pump, the other end of the wet processing equipment, characterized in that exposed to the circumference of the nozzle. The method of claim 9. The control unit is electrically connected to the injection pressure sensor, the wet processing equipment, characterized in that for setting the vacuum suction input lower than the injection pressure of the chemical measured by the injection pressure sensor.

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