KR20070095943A - 배면 미립자를 감소시키기 위한 기술 - Google Patents

배면 미립자를 감소시키기 위한 기술 Download PDF

Info

Publication number
KR20070095943A
KR20070095943A KR1020077015884A KR20077015884A KR20070095943A KR 20070095943 A KR20070095943 A KR 20070095943A KR 1020077015884 A KR1020077015884 A KR 1020077015884A KR 20077015884 A KR20077015884 A KR 20077015884A KR 20070095943 A KR20070095943 A KR 20070095943A
Authority
KR
South Korea
Prior art keywords
plate
cleaning material
process chamber
nozzle
particulates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077015884A
Other languages
English (en)
Korean (ko)
Inventor
데이비드 에드윈 수로넨
아서 폴 리아프
폴 스티븐 버코스
케빈 마이클 다니엘
폴 제이. 머피
로우렌스 피카라
케니스 엘. 스탁스
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20070095943A publication Critical patent/KR20070095943A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/024Cleaning by means of spray elements moving over the surface to be cleaned
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407Cleaning of reactor or reactor parts by using wet or mechanical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Devices For Medical Bathing And Washing (AREA)
KR1020077015884A 2004-12-13 2005-12-13 배면 미립자를 감소시키기 위한 기술 Withdrawn KR20070095943A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US63552404P 2004-12-13 2004-12-13
US60/635,524 2004-12-13
US11/239,000 US20060124155A1 (en) 2004-12-13 2005-09-30 Technique for reducing backside particles
US11/239,000 2005-09-30

Publications (1)

Publication Number Publication Date
KR20070095943A true KR20070095943A (ko) 2007-10-01

Family

ID=36582375

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077015884A Withdrawn KR20070095943A (ko) 2004-12-13 2005-12-13 배면 미립자를 감소시키기 위한 기술

Country Status (5)

Country Link
US (1) US20060124155A1 (enExample)
JP (1) JP2008523632A (enExample)
KR (1) KR20070095943A (enExample)
TW (1) TW200633036A (enExample)
WO (1) WO2006065778A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
KR20080095310A (ko) * 2001-11-02 2008-10-28 어플라이드 머티어리얼스, 인코포레이티드 미세 전자 소자의 세정 방법
US20060207634A1 (en) * 2005-03-16 2006-09-21 Applied Materials, Inc. Methods and apparatus for maintaining a fluid level in a tank
US7544254B2 (en) * 2006-12-14 2009-06-09 Varian Semiconductor Equipment Associates, Inc. System and method for cleaning an ion implanter
US20090000641A1 (en) * 2007-06-28 2009-01-01 Applied Materials, Inc. Methods and apparatus for cleaning deposition chamber parts using selective spray etch
TWI402111B (zh) * 2010-07-06 2013-07-21 Au Optronics Corp 製程反應系統
US20120247504A1 (en) * 2010-10-01 2012-10-04 Waleed Nasr System and Method for Sub-micron Level Cleaning of Surfaces
TWI568509B (zh) * 2013-07-30 2017-02-01 兆遠科技股份有限公司 防止塵粒進入腔室及清理腔室的裝置
US9318347B2 (en) 2014-08-14 2016-04-19 International Business Machines Corporation Wafer backside particle mitigation
US9184042B1 (en) * 2014-08-14 2015-11-10 International Business Machines Corporation Wafer backside particle mitigation
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910010639A (ko) * 1989-11-13 1991-06-29 제임스 조셉 드롱 압력차에 의해 제품의 표면에서 오염입자를 제거시키는 방법 및 장치
US5372652A (en) * 1993-06-14 1994-12-13 International Business Machines Corporation Aerosol cleaning method
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5925228A (en) * 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
US6080272A (en) * 1998-05-08 2000-06-27 Micron Technology, Inc. Method and apparatus for plasma etching a wafer
US6170496B1 (en) * 1998-08-26 2001-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for servicing a wafer platform
US6460552B1 (en) * 1998-10-05 2002-10-08 Lorimer D'arcy H. Method and apparatus for cleaning flat workpieces
US6362946B1 (en) * 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
JP3981243B2 (ja) * 2001-04-09 2007-09-26 日東電工株式会社 クリーニング機能付き搬送部材、及びこれに用いるクリーニング用ラベルシ―ト
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
JP3749848B2 (ja) * 2001-09-28 2006-03-01 大日本スクリーン製造株式会社 基板周縁処理装置
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques

Also Published As

Publication number Publication date
WO2006065778A2 (en) 2006-06-22
WO2006065778A3 (en) 2009-06-11
TW200633036A (en) 2006-09-16
JP2008523632A (ja) 2008-07-03
US20060124155A1 (en) 2006-06-15

Similar Documents

Publication Publication Date Title
KR101671555B1 (ko) 기판 세정 장치 및 진공 처리 시스템
US6733594B2 (en) Method and apparatus for reducing He backside faults during wafer processing
US9099298B2 (en) Substrate cleaning apparatus and substrate cleaning method
US10347511B2 (en) Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device STR
KR101420896B1 (ko) 플라즈마 처리 장치용 복합 샤워헤드 전극 어셈블리를 위한 세정 하드웨어 키트
JP6048043B2 (ja) 基板洗浄方法、基板洗浄装置及び真空処理システム
JP2003273078A (ja) プラズマ処理装置の洗浄方法、洗浄方法及びプラズマ処理装置
KR20070095943A (ko) 배면 미립자를 감소시키기 위한 기술
US20090126760A1 (en) System for cleaning a surface using crogenic aerosol and fluid reactant
CN105074879B (zh) 用于清洁基板的方法和装置
KR100349948B1 (ko) 클러스터를 이용한 건식 세정 장치 및 방법
US7101260B2 (en) Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7134941B2 (en) Methods for residue removal and corrosion prevention in a post-metal etch process
KR20070090772A (ko) 블라스트 처리 방법
US20090301516A1 (en) Substrate transfer device and cleaning method thereof and substrate processing system and cleaning method thereof
US20020104555A1 (en) Exhaust apparatus, semiconductor device manufacturing system and method for manufacturing semiconductor device
US7297286B2 (en) Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US20220205718A1 (en) Apparatus for treating substrate
US7066789B2 (en) Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
CN101437628A (zh) 减少背部颗粒的技术
US6387822B1 (en) Application of an ozonated DI water spray to resist residue removal processes
US6399513B1 (en) Ozonated DI water process for organic residue and metal removal processes
US20060011580A1 (en) Plasma processing method and post-processing method
KR20060046505A (ko) 플라즈마 처리 방법 및 후처리방법
KR100417648B1 (ko) 웨이퍼 세정방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070712

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid