TW200633036A - Technique for reducing backside particles - Google Patents

Technique for reducing backside particles

Info

Publication number
TW200633036A
TW200633036A TW094144120A TW94144120A TW200633036A TW 200633036 A TW200633036 A TW 200633036A TW 094144120 A TW094144120 A TW 094144120A TW 94144120 A TW94144120 A TW 94144120A TW 200633036 A TW200633036 A TW 200633036A
Authority
TW
Taiwan
Prior art keywords
technique
platen
particles
cause
process chamber
Prior art date
Application number
TW094144120A
Other languages
English (en)
Chinese (zh)
Inventor
David Edwin Suuronen
Arthur Paul Riaf
Paul Stephen Buccos
Kevin Michael Daniels
Paul J Murphy
Lawrence Ficarra
Kenneth L Starks
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200633036A publication Critical patent/TW200633036A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Devices For Medical Bathing And Washing (AREA)
TW094144120A 2004-12-13 2005-12-13 Technique for reducing backside particles TW200633036A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63552404P 2004-12-13 2004-12-13
US11/239,000 US20060124155A1 (en) 2004-12-13 2005-09-30 Technique for reducing backside particles

Publications (1)

Publication Number Publication Date
TW200633036A true TW200633036A (en) 2006-09-16

Family

ID=36582375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144120A TW200633036A (en) 2004-12-13 2005-12-13 Technique for reducing backside particles

Country Status (5)

Country Link
US (1) US20060124155A1 (enExample)
JP (1) JP2008523632A (enExample)
KR (1) KR20070095943A (enExample)
TW (1) TW200633036A (enExample)
WO (1) WO2006065778A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402111B (zh) * 2010-07-06 2013-07-21 Au Optronics Corp 製程反應系統
TWI568509B (zh) * 2013-07-30 2017-02-01 兆遠科技股份有限公司 防止塵粒進入腔室及清理腔室的裝置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6328814B1 (en) * 1999-03-26 2001-12-11 Applied Materials, Inc. Apparatus for cleaning and drying substrates
KR100939596B1 (ko) * 2001-11-02 2010-02-01 어플라이드 머티어리얼스, 인코포레이티드 단일 웨이퍼 건조기 및 건조 방법
US20060207634A1 (en) * 2005-03-16 2006-09-21 Applied Materials, Inc. Methods and apparatus for maintaining a fluid level in a tank
US7544254B2 (en) * 2006-12-14 2009-06-09 Varian Semiconductor Equipment Associates, Inc. System and method for cleaning an ion implanter
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
US20120247504A1 (en) * 2010-10-01 2012-10-04 Waleed Nasr System and Method for Sub-micron Level Cleaning of Surfaces
US9318347B2 (en) 2014-08-14 2016-04-19 International Business Machines Corporation Wafer backside particle mitigation
US9184042B1 (en) * 2014-08-14 2015-11-10 International Business Machines Corporation Wafer backside particle mitigation
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method

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KR910010639A (ko) * 1989-11-13 1991-06-29 제임스 조셉 드롱 압력차에 의해 제품의 표면에서 오염입자를 제거시키는 방법 및 장치
US5372652A (en) * 1993-06-14 1994-12-13 International Business Machines Corporation Aerosol cleaning method
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5925228A (en) * 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
US6080272A (en) * 1998-05-08 2000-06-27 Micron Technology, Inc. Method and apparatus for plasma etching a wafer
US6170496B1 (en) * 1998-08-26 2001-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for servicing a wafer platform
US6460552B1 (en) * 1998-10-05 2002-10-08 Lorimer D'arcy H. Method and apparatus for cleaning flat workpieces
US6362946B1 (en) * 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
JP3981243B2 (ja) * 2001-04-09 2007-09-26 日東電工株式会社 クリーニング機能付き搬送部材、及びこれに用いるクリーニング用ラベルシ―ト
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
JP3749848B2 (ja) * 2001-09-28 2006-03-01 大日本スクリーン製造株式会社 基板周縁処理装置
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402111B (zh) * 2010-07-06 2013-07-21 Au Optronics Corp 製程反應系統
TWI568509B (zh) * 2013-07-30 2017-02-01 兆遠科技股份有限公司 防止塵粒進入腔室及清理腔室的裝置

Also Published As

Publication number Publication date
KR20070095943A (ko) 2007-10-01
WO2006065778A3 (en) 2009-06-11
US20060124155A1 (en) 2006-06-15
WO2006065778A2 (en) 2006-06-22
JP2008523632A (ja) 2008-07-03

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