KR20070074819A - Wafer defositing apparatus for semiconductor fabrication - Google Patents

Abstract

A wafer depositing apparatus for fabricating a semiconductor is provided to prevent reaction gas from being deposited on an open/shut door by flowing inert gas between the inlet/outlet of a process chamber and the open/shut door. An inlet/outlet(120) into and from which a wafer is loaded/unloaded is formed in a process chamber(110). The inlet/outlet of the process chamber is opened/shut by an open/shut door(130). A block unit(200) forms inert gas flow for separating the process chamber from the open/shut door to prevent the reaction gas of the process chamber from being deposited on the open/shut door, formed in the inlet/outlet. The inert gas can be selected from an inert gas group of N, Ne, Ar, Kr, Xe and Rn.

Description

Wafer deposition apparatus for semiconductor manufacturing {WAFER DEFOSITING APPARATUS FOR SEMICONDUCTOR FABRICATION}

1 is a block diagram showing a wafer deposition apparatus for manufacturing a semiconductor according to an embodiment of the present invention.

2 is a block diagram showing a wafer deposition apparatus for manufacturing a semiconductor according to another embodiment of the present invention.

<Description of Symbols for Major Parts of Drawings>

100: deposition apparatus 110: process chamber

120: doorway 130: opening and closing door

200: blocking unit 210: housing

220: blower

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus, and more particularly, to a wafer deposition apparatus for manufacturing a semiconductor, which is installed at an entrance through which a wafer enters and exits a process chamber so that reaction gas is prevented from being deposited in an opening / closing door that opens and closes an entrance.

In general, a semiconductor device manufacturing process is classified into a photo process, a deposition process, an etching process, and an ion implantation process. Among the semiconductor device manufacturing processes, a deposition process for depositing a thin film on a wafer is a chemical process and a physical process. It is classified as a physical process.

The chemical process is performed by a chemical vapor deposition (hereinafter referred to as "CVD") method of forming a thin film layer on a wafer by supplying a gaseous compound to induce a chemical reaction.

The CVD is classified into low pressure CVD (low pressure pressure CVD) and atmospheric pressure or atmospheric pressure CVD (CVD) according to the internal pressure of the diffusion furnace in which the process is carried out. In addition, plasma CVD (PE CVD) and light CVD is used here.

The chemical vapor deposition method is mainly provided with a process chamber is provided so that the reaction gas is supplied to the wafer can be processed semiconductor manufacturing process. In addition, a transfer unit for transferring the wafer into the process chamber is provided, and a wafer entrance and exit having a predetermined size slot is formed in the process chamber so that the transfer unit transfers the wafer into the process chamber.

In addition, the entrance and exit is provided with an opening and closing door for sealing the entrance and exit so as to deposit the reaction gas on the wafer while maintaining a constant pressure inside the process chamber.

The opening and closing door is provided to seal the entrance and exit by an actuator such as a solenoid or a pneumatic cylinder, and is generally operated in a state in which the pressure inside the process chamber is aligned with the position to which the pressure is transferred.

However, when the deposition door is carried out in the process chamber while the door is closed, the reaction gas is deposited on the wafer and deposited on the surface of the door that closes the door. Therefore, since a part of the reaction gas is deposited on the surface of the opening / closing door, there is a problem that an undeposited region is generated in the wafer on which the reaction gas is to be deposited.

In addition, since the deposition is continuously on the surface of the opening and closing door, a gap with the entrance and exit occurs during the opening and closing operation by stacking deposition materials, and thus there is a problem that the pressure cannot be maintained inside the process chamber.

In this case, the defects of the wafer must be replaced, and the opening / closing door needs to be replaced, and there is a problem in that the wafer cannot be produced during the replacement process.

The present invention was created in view of the above-mentioned necessity, and is provided at a wafer entrance formed to allow wafers to enter and exit the process chamber, thereby blocking a reaction gas from being deposited on an opening / closing door for opening and closing the entrance with an inert gas stream. It is an object of the present invention to provide a wafer deposition apparatus for manufacturing a semiconductor including a unit.

The wafer deposition apparatus for manufacturing a semiconductor of the present invention for achieving the above object is provided in the process chamber, the opening and closing door for opening and closing the entrance and exit of the process chamber, the process chamber is provided in the entrance and exit, the process chamber And a blocking unit forming an inert gas stream separating the opening / closing door to prevent the reaction gas of the process chamber from being deposited on the opening / closing door.

Here, the inert gas stream is selected from the group of inert gases consisting of nitrogen (N), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn) to form an air stream. It is desirable to be.

And it is preferable that the blocking unit is flowed by an inert gas curtain in front of the entrance side of the opening and closing door.

In addition, it is installed between the opening and closing door and the entrance, the housing is formed with a wafer transfer path to the entrance, and is provided on the transfer path, can be air flow into the inert gas curtain to prevent the reaction gas from entering the opening and closing door direction It is preferable to include a tuyere formed so that.

In addition, the blower is preferably formed in the doorway.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In the following description of the present invention, the terms defined are defined in consideration of functions in the present invention, and should not be understood as a meaning of limiting the technical components of the present invention.

1 is a block diagram showing a wafer deposition apparatus for manufacturing a semiconductor according to an embodiment of the present invention.

Referring to Figure 1, the semiconductor deposition wafer deposition apparatus 100 of the present invention is formed on the one side of the process chamber 110, the entrance 120 is provided so that the wafer (W) can enter and exit. And the doorway 120 is provided with an opening and closing door 130 for opening and closing the doorway (120).

A blocking unit 200 is provided between the doorway 120 and the opening / closing door 130 to prevent the reaction gas from entering the opening / closing door 130. Here, the entrance 130 is provided in the form of a slot to allow the wafer W to enter and exit.

The process chamber 110 is provided to perform a wafer deposition process by maintaining a constant vacuum pressure therein, and a support plate 111 is provided at the center to support the wafer W flatly. And the support plate 111 is provided to be able to move up and down.

In addition, the process chamber 110 is provided with a reaction gas supply port 112 so that the reaction gas can be supplied. Here, since the configuration and operation of the process chamber 110 are well known techniques, detailed descriptions thereof will be omitted.

And the opening and closing door 130 is provided with an actuator 131 for driving the opening and closing door 130 to open and close the door 120, the actuator 131 is provided with a solenoid or pneumatic cylinder. In addition, while allowing the actuator 131 to be fixed, the body 132 is configured to drive the actuator 131.

The blocking unit 200 blows an inert gas to prevent the reaction gas from entering the opening / closing door 130. Therefore, the blocking unit 200 is preferably such that the inert gas is blown from the top to the bottom. In addition, the blocking unit 200 may be blocked by blowing in the transverse direction.

Here, the blocking unit 200 is provided on the housing 210 in which the wafer transfer path 211 is formed toward the doorway 130, and is provided on the transfer path 211, and the reaction gas enters the opening / closing door 130. It is configured to include a blower 220 for forming an inert gas stream to be prevented.

And the transfer path 211 is provided in the same shape as the entrance 130 so that the wafer (W) can transfer.

The inert gas blown through the tuyeres 220 is supplied from an inert gas supply device (not shown). Inert gas may also be installed by a separate blowing fan to be airflow. In addition, a plurality of blowers 220 may be provided to output an inert gas to the transport path 111 of the housing 210, and the inert gases output by forming the blowers 220 in a slit form are inert gas curtains. It can cause airflow.

In addition, a nozzle (not shown) may be installed at the air outlet 220 to be blown with an inert gas curtain.

In addition, the valve 230 may be further provided to open and close the inert gas supplied through the tuyeres 220 in conjunction with the process chamber 110. The valve 230 is preferably a pneumatic valve.

And the opening and closing door 130 side end of the transport path 211 by the inert gas curtain to prevent the reaction gas from colliding with the inner wall on the transport path 211 to enter the opening and closing door 130 of the blower 220 On the opposite side, a step 212 is formed.

Therefore, even if the impingement gas blown from the tuyere 220 collides with the inner wall of the transfer path 211 on the opposite side of the tuyere 220 to enter the direction of the opening and closing door 130 is blocked by the step 212.

Hereinafter, an operation of the wafer deposition apparatus for manufacturing a semiconductor according to an embodiment of the present invention will be described with reference to FIG. 1.

First, the opening / closing door 130 is opened to insert the wafer W into the process chamber. The wafer W is mounted on the inner support plate 111 of the process chamber 110 through the transfer path 211 and the entrance 130.

After the actuator 131 is activated and the opening and closing door 130 blocks the inlet of the transfer path (211). Then, the blocking unit 200 is operated to be blown to the inert gas curtain through the Sung-gu 220.

Thereafter, the process chamber 110 controls the temperature and vacuum pressure for performing the deposition process and then performs the deposition process. At this time, the reaction gas is blocked from entering the opening and closing door 130 by the inert gas curtain of the blocking unit 200. And it is not deposited on the opening and closing door 130 by blocking the reaction gas.

Therefore, the deposition is prevented in the opening and closing door 130, the gap between the opening and closing door 130 and the entrance 120 by the deposition is prevented, and the predetermined pressure of the process chamber 110 can be maintained to open and close the door 130 ) Can continuously perform its sealing function.

In addition, since the deposition of the reaction gas on the wafer W occurs only inside the process chamber 110 by preventing deposition on the opening / closing door 130, the undeposited region of the wafer W is significantly reduced.

Hereinafter, a wafer deposition apparatus for manufacturing a semiconductor according to another embodiment of the present invention will be described.

2 is a block diagram showing a wafer deposition apparatus for manufacturing a semiconductor according to another embodiment of the present invention. A wafer deposition apparatus for manufacturing a semiconductor of the present invention will be described with reference to FIG. 2.

A plurality of air vents 121 are formed in the slot type entrance 120 provided in the deposition apparatus 110. In this case, the blower 121 may allow the inert gas to be blown in a vertical direction or to blow the inside of the process chamber 110 at a predetermined angle.

Therefore, the doorway 120 is preferably protruded in the form of a flange in the direction of the opening and closing door 130. In addition, the air outlet 121 is formed on the inner wall of the upper entrance so that the inert gas flows from the upper portion to the lower portion of the entrance 120.

In addition, a step 122 is formed below the end of the doorway 120 to prevent the reaction gas from colliding with the inner wall of the doorway 120 and entering the opening / closing door 130 by the inert gas curtain.

Therefore, even if the reaction gas enters the direction of the opening and closing door 130 by hitting the inner wall of the doorway on the opposite side of the blower 121 by the inert gas blown from the blower 121, it is blocked by the step 122.

Here, the valve 123 may be further provided to open and close the inert gas supplied through the tuyeres 121 in conjunction with the process chamber 110. At this time, the valve 123 is preferably a pneumatic valve.

Hereinafter, the operation of the wafer deposition apparatus for manufacturing a semiconductor according to another embodiment of the present invention is the same as the embodiment referring to FIG.

Although the technical idea of the wafer deposition apparatus for manufacturing a semiconductor of the present invention has been described above with the accompanying drawings, this is illustrative of the best embodiments of the present invention and is not intended to limit the present invention.

Therefore, it is obvious that any person skilled in the art can make various modifications and imitations such as dimensions, shapes, structures, etc. without departing from the scope of the technical idea of the present invention.

According to the present invention, a wafer deposition apparatus for manufacturing a semiconductor having a blocking unit which prevents the reaction gas from being deposited on the opening and closing door by flowing an inert gas between the entrance and the opening door of the process chamber has a reaction gas in the opening and closing door that opens and closes the entrance and exit. Since the deposition is prevented, there is an effect of preventing the vacuum pressure imbalance inside the process chamber due to the opening and closing poor.

In addition, by blocking the reaction gas by flowing in an inert gas curtain, the reaction gas reacts only in the process chamber, thereby depositing the wafer, thereby preventing undeposition of the wafer.

Claims (5)

A process chamber provided with an entrance and exit for entering and exiting the wafer; An opening / closing door for opening and closing the entrance and exit of the process chamber; And, And a blocking unit provided at the entrance and configured to form an inert gas stream separating the process chamber from the opening / closing door to prevent the reaction gas of the process chamber from being deposited on the opening / closing door. Vapor deposition apparatus. The method of claim 1, The inert gas stream is selected from the group of inert gases consisting of nitrogen (N), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn) to form an air stream. Wafer deposition apparatus characterized in that. The method of claim 1, The blocking unit is a semiconductor deposition wafer deposition apparatus, characterized in that the air flow in the inlet gas curtain in front of the door side of the opening and closing door. The method of claim 1, A housing installed between the opening and closing door and the entrance and having a wafer transfer path formed therein; And a tuyere provided on the conveying path and formed to be flowed into the inert gas curtain to prevent the reaction gas from entering the opening / closing door direction. The method of claim 4, wherein The air vent is a wafer deposition apparatus for manufacturing a semiconductor, characterized in that formed in the entrance.

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