KR20070006552A - Organic light emitting display device, and manufacturing method thereof - Google Patents

Abstract

An organic light emitting display device and a method for manufacturing the same are provided to attach a first board to a second board by interposing an anisotropic conductive material between the boards and pressing the conductive material to connect a contact and a second electrode. A first board(100) having an organic light display emitting device is prepared, and a second board(200) having an organic thin film transistor(220) is prepared. A contact(300) is formed on at least one of the first and second boards. The first and second boards are adhered to each other so that the first board is electrically connected to the second board by a contact. In the step of preparing the first board, a first electrode is formed on a first substrate(110), an organic film having a light emitting layer is formed on the first electrode, and then, a second electrode is formed on the organic film.

Description

Organic light emitting display device, and manufacturing method thereof

1A is a cross-sectional view of an active matrix organic light emitting display device according to an embodiment of the present invention, which illustrates a state before joining two substrates;

1B is a cross-sectional view of an active matrix organic light emitting display device according to an embodiment of the present invention, illustrating a state after joining two substrates;

2 is a cross-sectional view illustrating one pixel of an organic light emitting diode display of the present invention;

3 is a circuit diagram illustrating an example of a pixel circuit configuration of an active matrix organic light emitting display device according to the present invention;

4 is a circuit diagram illustrating another example of a pixel circuit configuration of an active matrix organic light emitting display device according to an embodiment of the present invention;

5 is a cross-sectional view illustrating another example of an active matrix organic light emitting display device according to the present invention;

Prior Art 1: EP 0717445

Prior Art 2: WO 2003/071511

Prior Art 3: US 6157356

Prior art 4: WO99 / 53371

Prior art 5: WO2003 / 098696

Prior art 6: WO2003 / 056640

Prior art 7: WO99 / 54936

Prior Art 8: EP 1246244

Prior art 9: APL Vol. 83, No. 16, 2003-10-20, M. Kitamura

Prior Art 10: US 6091194

Prior Art 11: US 2002/0079494

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a manufacturing method thereof, and more particularly, to an active matrix organic light emitting display device and a method for manufacturing the same, which can be made flexible.

The cost problem is very important in the manufacture of flat panel displays. The goal of many manufacturers is to produce high quality displays at low cost. As a very promising attempt in new display technology, the use of organic light emitting displays with organic thin film transistors for active control has been proposed.

Recently, multiplexing of activation circuits has been adopted in active matrix organic light emitting display devices. In this case, the organic light emitting diode display is based on a low molecule or a polymer. Current arrays of active matrix pixels are based on inorganic silicon transistors or organic transistors. In this case, in the organic transistor OTFT, "organic" means that an organic semiconductor material is applied. For this reason, the transistor may include not only an organic semiconductor material but also an inorganic material or both materials. Here, a solution and a material capable of low temperature processing are used.

Prior art 1 discloses an active matrix display with organic light emitting element pixels, and prior art 2 discloses an AMOLED display in which capacitors are arranged vertically to improve the stacking factor of the display. However, since the above devices place a device such as a transistor next to the display element, the lamination factor is low.

The pixel array is based on n-channel or p-channel MOSFETs. Polycrystalline, amorphous, or monocrystalline silicon is applied. For example, a basic structure having two transistor circuits is disclosed in the prior art 3. This inorganic transistor technology requires a cost-intensive semiconductor manufacturing technology.

In addition, display technologies such as electrophoretic, electro-chrome, or liquid crystal displays can be operated with an organic semiconductor matrix. The display seen in prior art 4 includes a sealed display medium operated by an OTFT.

In theory, there is a need for transistors with charge mobility of approximately 1 to 10 cm 2 / Vs to operate OLED displays. The charge mobility of the best organic transistors is in the range of approximately 5 cm 2 / Vs. OLED displays will be manufactured with these transistors in the near future. The use of organic transistors can be applied to direct-structuring techniques, such as low temperature production processes and inkjet printing techniques, for the manufacture of a second substrate (meaning a substrate having OTFT functional layers). At this time, there is an advantage that can significantly lower the production cost.

A method for manufacturing a circuit for an electro-optical device using inkjet technology is disclosed, for example, in the prior art.

The use of driver devices for OTFT circuits and / or OLED displays is already known from some publications.

Prior art 6 discloses a display in which OLEDs and OTFTs are arranged on the same substrate. The OLED is arranged under the OTFT. In this case, due to the sensitive nature of the OLED material, the method of manufacturing OTFT is limited. That is, only low temperature methods are possible, which is limited to the selection of OTFT materials.

Prior art 7 discloses an integrated circuit using a semiconductor polymer material as the switching element. The organic display element is located directly at the electrode of the switching element.

Prior art 8 discloses an active matrix display with an OLED. Vertical TFT structures such as static induction transistors (SIT) can be used. The TFT and the display element share the same electrode and can be arranged on the same substrate.

An OTFT-OLED pixel arrangement based on a short chain pentacene material is disclosed in prior art 9. Here, the OTFT-OLED pixel structure is that the OLED is deposited on a substrate such as OTFT. OLED pixels are formed on the same substrate, top, bottom or side of the OTFT.

According to the above-described structure, the manufacturing process of the OTFT and OLED should proceed in a continuous order. However, OTFTs and OLEDs cannot be manufactured and tested at the same time. In addition, in order to arrange the OTFT next to the OLED, a required space is required. In this case, the laminating factor is inevitably reduced.

According to a known method of manufacturing an active matrix display based on OTFT, only a limited manufacturing method can be adopted. If the OLED and the OTFT are formed on the same substrate, the manufacturing method of the OLED and the OTFT may have a negative effect on each other. There is a partial need for high temperature processes for OLEDs. For example, firing the resin layer for forming the pixel defining film, forming the pixel electrode by sputtering, or the like. These processes can damage the organic materials of the already formed OTFT and adversely affect the TFT properties.

Prior art 10 discloses an active matrix display in which an OLED material is disposed between an upper substrate and a lower substrate. The lower substrate includes a switching element, but the switching element is on the outer surface of the lower substrate. At this time, the lower substrate requires a separate transmission hole for the connection with the switching element. When using organic transistors, additional encapsulation is needed to protect the OTFT from moisture, oxygen, and dust.

Prior art 11 discloses an AMOLED display. This is based on a general TFT having a good lamination structure. The electrical connection between the transistor and the OLED is made by an anisotropic conductive film. To this end, namely, in order to contact the conductive medium to the surface, a comprehensive substrate preparation process is required. The actual process of combining the OLED and OTFT is also complex, requiring vacuum, heat, pressure or ultraviolet light. Neither organic transistors nor inkjet technology can be used. In addition, an additional protective layer of OLED is needed.

Therefore, the main object of the present invention is an organic light emitting display device which can be controlled by a thin film transistor structure, can simultaneously manufacture and test functional layers of an OLED structure as well as functional layers of an OTFT structure, and can reduce manufacturing time. And to provide a method for producing the same.

Another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can further reduce cost.

The present invention provides a method of preparing a first substrate including an organic light emitting diode, preparing a second substrate including an organic thin film transistor, and forming a contact on at least one of the first substrate and the second substrate. And bonding the first substrate and the second substrate to electrically connect the first substrate and the second substrate by the contact.

Preparing the first substrate may include forming a first electrode on a first substrate, forming an organic layer including an emission layer on the first electrode, and forming a second electrode on the organic layer. The contact may be electrically connected to the second electrode.

The preparing of the second substrate may include forming a structure on the second substrate, the structure including a source and drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode, wherein the contact includes the source and drain electrodes. It may be electrically connected to either.

The contact may be formed of a conductive resin material by a dispenser technique, a solution containing metal particles may be formed by an inkjet printing technique, or may be formed of a conductive polymer.

The method may further include sealing a space between the first substrate and the second substrate, wherein the sealant may include a spacer at edges of the first substrate and the second substrate, and the sealant may include a spacer. Can be.

The bonding of the first substrate and the second substrate may include bonding the first substrate and the second substrate after the anisotropic conductive bonding material is interposed between the first substrate and the second substrate.

The present invention also includes a first substrate including an organic light emitting element, a second substrate including an organic thin film transistor, and the first substrate and the second substrate interposed between the first substrate and the second substrate. An organic light emitting display device including an electrical connection is provided.

The first substrate may include an organic film including a first substrate, a first electrode provided on one surface of the first substrate, an emission layer provided on one surface of the first electrode, and a first substrate provided on one surface of the organic film. The electrode may include two electrodes, and the contact may be electrically connected to the second electrode.

The second substrate is provided on the second substrate and the other surface of the second substrate, and includes a structure including a source and drain electrode, an organic semiconductor layer, a gate insulating film, and a gate electrode, wherein the contact includes the source and It may be electrically connected to any one of the drain electrodes.

The contact may be provided with a conductive resin material, a solution containing a metal particle, or may be provided with a conductive polymer.

A space between the first substrate and the second substrate may be sealed, which may be provided at edges of the first substrate and the second substrate via a sealant, and the sealant may include a spacer.

An anisotropic conductive bonding material may be interposed between the first substrate and the second substrate.

The display device may further include a passivation layer covering an opposing surface of at least one of the first substrate and the second substrate, and the contact may be provided on a surface of the passivation layer.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1A and 1B are cross-sectional views of an active matrix organic light emitting display device according to the present invention, in which FIG. 1A shows a state before combining two substrates, and FIG. 1B shows a state after combining two substrates. .

In order to manufacture an active matrix organic light emitting display device according to the present invention, first, an organic light emitting diode (OLED) substrate 100 and an organic thin film transistor (OTFT) substrate 200 are prepared. Here, the first substrate 100 refers to a substrate on which an organic light emitting diode is formed, that is, a substrate in which light emission is directly generated, and the second substrate 200 includes various pixels including an organic thin film transistor. The substrate is provided with a circuit, that is, the substrate for controlling the pixel signal.

The first substrate 100 includes an organic light emitting device 120 provided on a surface of the first substrate 110 facing the second substrate 200, and the second substrate 200 is a second substrate 210. It includes a structure of the organic thin film transistor 220 provided on the surface facing the first substrate (100).

The first substrate 110 on which the organic light emitting device 120 is formed is preferably provided transparently, and transparent glass or plastic material may be used. The second substrate 210 on which the structure of the organic thin film transistor 220 is formed is not necessarily transparent, and may be formed of glass, plastic, or metal.

The first substrate 100 and the second substrate 200 are separately manufactured as shown in FIG. 1A and then bonded as shown in FIG. 1B. In this case, the contact 300 is formed on the second substrate 200, and the organic light emitting diodes 120 of the first substrate 100 and the organic thin film transistors 220 of the second substrate 200 are mutually connected. Connect electrically. The contact 300 does not necessarily need to be formed only on the second substrate 200, but may also be formed only on the first substrate 100, and both the first substrate 100 and the second substrate 200 may be formed. It may be formed in.

Bonding of the first substrate 100 and the second substrate 200 may be made by a sealant 400 positioned at an edge, as shown in FIG. 1B. In this case, the sealant 400 may include a spacer 410 to secure the distance between the first substrate 100 and the second substrate 200. In the organic light emitting display device formed as described above, an image is implemented in the direction of the first substrate 100, that is, the arrow direction in FIG. 1B, but is not limited thereto. It is possible to have an image implemented.

Referring to FIG. 2, the first substrate 100, the second substrate 200, and the contact 300 will be described in more detail.

First, in the case of the first substrate 100, the first electrode 121 is formed on one surface of the first substrate 110. The pixel defining layer 130 having a predetermined opening is formed on one surface of the first electrode 121. The organic layer 123 including the hole transport layer 124 and the emission layer 125 is formed on one surface of the first electrode 121 exposed through the opening of the pixel definition layer 130. The second electrode 122 is formed on one surface of the (). The first electrode 121 may function as an anode electrode, and the second electrode 122 may function as a cathode electrode, but the polarity may be reversed.

The first electrode 121 may be formed to cover all the pixels or to correspond to the individual pixels. The first electrode 121 may be formed of a transparent conductor having a high work function. Thereby, ITO, IZO, In2O3, ZnO, etc. can be formed by sputtering.

Next, the pixel definition layer 130 is formed. The pixel definition layer 130 may be formed of an organic insulating layer, an inorganic insulating layer, or an organic-inorganic hybrid layer, and may have a single structure or a multilayer structure thereof. When applied to a flexible display, the pixel definition layer 130 may be formed of an organic insulating layer.

As the organic insulating film, a polymer material may be used. Examples thereof include general general purpose polymers (PMMA, PS), polymer derivatives having phenol groups, acrylic polymers, imide polymers, arylether polymers, amide polymers, fluorine polymers, p-xylene polymers, vinyl alcohol polymers and blends thereof are possible.

As the inorganic insulating film, SiO 2, SiNx, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ , ZrO ₂ , BST, PZT, and the like are possible.

The pixel definition layer 130 may be formed by an inkjet method. First, a portion of the first electrode 121 is surface treated. At this time, the surface treatment process makes the surface hydrophobic using fluorine-based plasma. At this time, the surface treatment process using a fluorine-based plasma uses a fluorine-based gas such as CF4 or C3F8. Then, a solution including an insulating material for the pixel defining layer is discharged from the inkjet head on the first electrode 121 to form the pixel defining layer 130. In this case, an opening for exposing the first electrode 121 is formed in the surface-treated portion of the first electrode 121 without forming the pixel definition layer 130.

When the adhesion between the surface of the first electrode 121 or the surface of the first substrate 110 and the ink is not good, the first electrode except for a portion corresponding to the opening exposing a portion of the first electrode 121 ( 121) It is also possible to surface-treat the surface or the surface of the first substrate 110 to form the pixel definition layer 130 having an opening.

That is, a surface treatment process using Ar and O 2 plasma is performed on the first electrode 121 or the first substrate 110 except for the surface of the first electrode 121 corresponding to the opening, thereby performing the first electrode 121. By modifying the surface or the surface of the surface of the first base 110 to be hydrophilic to improve the adhesion. Subsequently, when the ink including the insulating material for forming the pixel definition layer is discharged onto the substrate surface, the pixel definition layer 130 is coated only on a portion where the surface treatment is performed and the adhesion is improved. Therefore, the pixel defining layer 130 is not formed on the surface of the first electrode 121 which is not subjected to the plasma surface treatment.

Formation of the pixel definition layer 130 is not necessarily limited thereto, and an opening may be formed by a photolithography method after the insulating film is formed by a general method.

The organic layer 123 is formed on the first electrode 121 exposed through the opening of the pixel definition layer 130.

The organic layer 123 may be a low molecular or high molecular organic material. When the low molecular organic material is used, a hole injection layer (HIL), a hole transport layer (HTL), and an organic emission layer (EML) may be used. ), An electron transport layer (ETL), an electron injection layer (EIL), or the like, may be formed by stacking a single or a complex structure, and the usable organic material may be copper phthalocyanine (CuPc). , N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Various applications are possible, including tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic layers can be formed by vacuum deposition.

In an exemplary embodiment of the present invention according to FIG. 2, it may be formed of a polymer organic material, and may be provided as a hole transport layer 124 and a light emitting layer 125. In this case, PEDOT is used as the hole transport layer 124. As the light emitting layer 125, a polymer organic material such as polyvinylvinylene (PPV) and polyfluorene, may be used. The light emitting layer 125 may be formed by screen printing or inkjet printing.

After the organic layer 123 is formed, the second electrode 122 is formed to cover the organic layer 123. The second electrode 122 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, or a compound thereof having a low work function and good reflectance. The second electrode 122 may be formed for each pixel by deposition using a mask, but is not limited thereto, and may inkjet a solution containing metal powders such as Ag, Mg, Cu, Au, Pt, Pd, and Ni. After printing using a printing method, it may be baked to form an electrode.

The second substrate 200 has a structure in which the gate electrode 221, the gate insulating film 222, the organic semiconductor layer 223, the source electrode 224, and the drain electrode 225 are sequentially formed on the second substrate 210. Can be formed.

The gate electrode 221 is formed of a metal material such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, and a compound thereof by a method such as vapor deposition or sputtering, A solution containing metal powders such as Mg, Cu, Au, Pt, Pd, and Ni may be printed by using an inkjet printing method and then calcined to form.

The gate insulating film 222 is formed to cover the gate electrode 221. The gate insulating film 222 may be formed of an organic insulating film, an inorganic insulating film, or an organic-inorganic hybrid film, as in the pixel definition layer described above. They consist of a single structure or a multilayer structure.

The organic semiconductor layer 223 is formed on the gate insulating layer 222 to be insulated from the gate electrode 221. Organic semiconductors include pentacene, tetratracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and derivatives thereof, Rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and Derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof, with or without metals, naphthalenetetracarboxylic diimides (naphthalene tetracarboxylic diimide) and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof, pyromellitic dianhydride and its derivatives Derivatives, pyromellitic diimides and derivatives thereof, conjugated polymers and derivatives thereof including thiophene, and polymers and derivatives thereof including fluorene can be used.

The source electrode 224 and the drain electrode 225 are formed to contact the organic semiconductor layer 223 on the organic semiconductor layer 223. The source electrode 224 and the drain electrode 225 preferably include an electrode material having a larger work function than the organic semiconductor layer 223 in consideration of contact characteristics with the organic semiconductor layer 223. Au, Pt And it may be to include a metal material selected from Pd.

The stacked structure of the organic TFT 220 as described above is not necessarily limited thereto, and all TFTs having various structures such as a top gate structure may be applied.

After the organic TFT 220 is formed as described above, the contact 300 is formed on any one of the source electrode 224 and the drain electrode 225 of the organic TFT 220. In the embodiment as shown in FIG. 2, the drain electrode 225 may be formed, but is not limited thereto.

The contact 300 electrically connects the first substrate 100 and the second substrate 200, and may be formed using a dispenser technique using a conductive resin. The conductive resin, such as conductive epoxy, may include a conductive material such as silver or carbon, and may include an adhesive material based on an epoxy, acrylic, urethane, or silicon-based material.

In addition, the contact 300 may be formed of an ink jet printing technique or a conductive polymer containing a metal particle.

For inkjet fritting, an aqueous metal solution or a metal solution based on an organic solvent or a suspension (ink) is suitable, and a metal compound, an ionic compound, or a composite compound thereof may be included. After printing, it can be baked to ensure the conductivity of the metal. Ag, Au, Pt, Pd, Cu, Ni and the like can be used.

The conductive polymer may include a conductive rubber, which has a structure in which the conductive film and the nonconductive thin film are closely arranged with each other. This conductive polymer is inexpensive and can be applied very quickly. It is also not susceptible to corrosion and can absorb external vibrations and shocks, making it more effective.

The contact 300 may cover 1 to 50% of the pixel area, preferably 1 to 25%. More preferably, it may cover 1 to 20%.

Since the material forming the contact 300 is flexible in the manufacturing process, it is more useful for bonding the first substrate 100 and the second substrate 200. That is, even when the bonded portion of each substrate is not rough or flat, it can be alleviated so that the contact can be made smoothly.

The second substrate 200 may include various pixel circuits including the OTFT 220 of FIG. 2. 3 shows one transistor pixel circuit as an example. The select line S and the data line D cross each other, and the switching transistor M is connected therebetween. When the select signal is applied to the select line S, the switching transistor M is turned on, the data signal may be connected to the organic light emitting diode OLED through the data line D, and the storage capacitor Cst is charged. can do. At this time, one driving voltage Vss is applied to the other node of the storage capacitor Cst, and the difference value is charged. When the switching transistor M is turned off, the organic light emitting diode OLED is driven with the voltage value charged in the storage capacitor Cst. Another driving voltage Vdd is applied to the other node of the organic light emitting diode OLED.

As shown in FIG. 4, the pixel circuit may be implemented by two transistor pixel circuits. Directly connected to the select line S and the data line D is the switching transistor M2, and connected to the organic light emitting element OLED is the driving transistor M1.

Such transistors are implemented by the organic thin film transistor described above, and the storage capacitor may be formed simultaneously in forming the gate electrode and the source and drain electrodes of the organic thin film transistor.

5 illustrates a more specific embodiment of the present invention.

First, in the case of the first substrate 100, a first electrode 121 is formed over the entire pixel on the first substrate 110, and an opening corresponding to each pixel is formed on the first electrode 121. A pixel definition film 130 is formed. Using the pixel definition film 130 as a subsequent inkjet printing dam, the organic film 123 and the second electrode 122 are successively inkjet printed. Then, the organic layer 123, in particular, the emission layer 125 and the second electrode 122 may be patterned to easily correspond to the pixel. The organic layer 123 and the second electrode 122 may be formed by a laser transfer method.

Next, in the case of the second substrate 200, after the gate electrode 221 is formed on the second substrate 210, the gate insulating layer 222 is formed to cover the gate electrode 221. The source electrode 224 and the drain electrode 225 are formed on the gate insulating film 222, and the organic semiconductor layer 223 is formed thereon. The passivation layer 240 is formed on the gate insulating layer 222 to cover the source electrode 224, the drain electrode 225, and the organic semiconductor layer 223. Like the pixel defining layer 130, the passivation layer 240 may be formed as an organic insulating layer, an inorganic insulating layer, or a composite thereof. After forming the contact hole 241 in the passivation layer 240, a contact 300 is formed on the passivation layer 240, so that the contact 300 is connected to any one of the source electrode 224 and the drain electrode 225. Make contact. The protective film may be formed on the first substrate. The protective film may be formed to cover the pixel definition layer in the same manner as the protective film formed on the second substrate, and then contact holes may be formed to form a contact on the protective film. have.

After the contact is formed as described above, the first substrate 100 and the second substrate 200 are bonded to each other through the anisotropic conductive material 500 between the first substrate 100 and the second substrate 200. do. In the anisotropic conductive material 500, the adhesive 520 includes a plurality of conductive balls 510. As the conductive ball 510 is pressed by the bonding of the first substrate 100 and the second substrate 200, The contact 300 and the second electrode 122 are energized. Accordingly, an organic light emitting display device can be obtained simply.

According to the present invention as described above, the following effects can be obtained.

First, an organic light emitting display device can be manufactured at low cost.

Second, the manufacturing process can be simplified.

Third, it is possible to simply implement a flexible display.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (21)

Preparing a first substrate including an organic light emitting device; Preparing a second substrate including an organic thin film transistor; Forming a contact on at least one of the first substrate and the second substrate; And Bonding the first substrate and the second substrate to electrically connect the first substrate and the second substrate by the contact. The method of claim 1, Preparing the first substrate, Forming a first electrode on a first substrate; Forming an organic layer including an emission layer on the first electrode; Forming a second electrode on the organic layer; And the contact is electrically connected to the second electrode. The method of claim 1, Preparing the second substrate, Forming a structure including a source and a drain electrode, an organic semiconductor layer, a gate insulating film, and a gate electrode on the second substrate, And the contact is electrically connected to any one of the source and drain electrodes. The method of claim 1, And the contact is formed of a conductive resin material using a dispenser technique. The method of claim 1, The contact is a method of manufacturing an organic light emitting display device to form a solution containing a metal particle by inkjet printing technology. The method of claim 1, The contact is formed of a conductive polymer. The method of claim 1, And sealing a space between the first substrate and the second substrate. The method of claim 7, wherein And sealing the first substrate and the second substrate through a sealant at edges of the first substrate and the second substrate. The method of claim 8, And the sealant comprises a spacer. The method of claim 1, The bonding of the first substrate and the second substrate may include manufacturing an organic light emitting display device in which an anisotropic conductive bonding material is interposed between the first substrate and the second substrate, and then the first substrate and the second substrate are bonded together. Way. A first substrate including an organic light emitting device; A second substrate including an organic thin film transistor; And And a contact interposed between the first substrate and the second substrate to electrically connect the first substrate and the second substrate. The method of claim 11, The first substrate, First substrate; A first electrode provided on one surface of the first substrate; An organic layer including a light emitting layer on one surface of the first electrode; And And a second electrode provided on one surface of the organic film. The contact is electrically connected to the second electrode. The method of claim 11, The second substrate, Second substrate; And A structure provided on the other surface of the second substrate, the structure including a source and drain electrode, an organic semiconductor layer, a gate insulating film, and a gate electrode; And the contact is electrically connected to any one of the source and drain electrodes. The method of claim 11, And the contact is made of a conductive resin material. The method of claim 11, The contact is an organic light emitting display device provided with a solution containing a metal particle. The method of claim 11, And the contact is made of a conductive polymer. The method of claim 11, An organic light emitting display device in which a space between the first substrate and the second substrate is sealed. The method of claim 17, The sealing of the first substrate and the second substrate is provided on the edge of the first substrate and the second substrate via a sealant. The method of claim 18, The sealant includes a spacer. The method of claim 11, An organic light emitting display device having an anisotropic conductive bonding material interposed between the first substrate and the second substrate. The method of claim 11, And a protective film covering at least one opposing surface of the first substrate and the second substrate. The contact is disposed on the surface of the passivation layer.

Images