KR20070002624A - Pgs 및 이를 포함하는 반도체 소자 - Google Patents
Pgs 및 이를 포함하는 반도체 소자 Download PDFInfo
- Publication number
- KR20070002624A KR20070002624A KR1020050058235A KR20050058235A KR20070002624A KR 20070002624 A KR20070002624 A KR 20070002624A KR 1020050058235 A KR1020050058235 A KR 1020050058235A KR 20050058235 A KR20050058235 A KR 20050058235A KR 20070002624 A KR20070002624 A KR 20070002624A
- Authority
- KR
- South Korea
- Prior art keywords
- pgs
- inductor coil
- semiconductor device
- psg
- device including
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000011229 interlayer Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910016570 AlCu Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (4)
- 인덕터 코일을 구비한 반도체 소자의 PGS에 있어서,상기 PGS는상기 인덕터 코일의 중심부에 구비된 내측 PGS;상기 인덕터 코일의 외곽에 구비된 외측 PGS; 및상기 내측 PGS와 외측 PGS를 연결하는 연결부를 포함하는 것을 특징으로 하는 PGS 및 이를 포함하는 반도체 소자.
- 제 1 항에 있어서,상기 PGS는 폴리실리콘층, N Well, P Well, 금속층 및 이들의 조합 중에서 선택된 임의의 한가지로 형성하는 것을 특징으로는 하는 PGS 및 이를 포함하는 반도체 소자.
- 나선형의 인덕터 코일;상기 인덕터 코일 하부의 층간 절연막;상기 층간 절연막 내에 구비되는 PGS를 포함하되,상기 PGS는상기 인덕터 코일 중심부 하측에 구비된 내측 PGS;상기 인덕터 코일 외곽 하측에 구비된 외측 PGS;상기 내측 PGS와 외측 PGS를 연결하는 연결부; 및상기 연결부에 접속되는 그라운드 접속용 비아;를 초함하는 것을 특징으로 하는 PGS 및 이를 포함하는 반도체 소자.
- 제 1 항에 있어서,상기 인덕터 금속 패턴은 Cu, Al, AlCu, Au 또는 Ag로 형성하는 것을 특징으로 하는 PGS 및 이를 포함하는 반도체 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050058235A KR100759252B1 (ko) | 2005-06-30 | 2005-06-30 | Pgs 및 이를 포함하는 반도체 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050058235A KR100759252B1 (ko) | 2005-06-30 | 2005-06-30 | Pgs 및 이를 포함하는 반도체 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070002624A true KR20070002624A (ko) | 2007-01-05 |
KR100759252B1 KR100759252B1 (ko) | 2007-09-17 |
Family
ID=37869589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050058235A KR100759252B1 (ko) | 2005-06-30 | 2005-06-30 | Pgs 및 이를 포함하는 반도체 소자 |
Country Status (1)
Country | Link |
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KR (1) | KR100759252B1 (ko) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3579000B2 (ja) * | 2001-04-05 | 2004-10-20 | シャープ株式会社 | 半導体装置 |
-
2005
- 2005-06-30 KR KR1020050058235A patent/KR100759252B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100759252B1 (ko) | 2007-09-17 |
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