KR20070000134A - 이미지 센서의 제조 방법 - Google Patents
이미지 센서의 제조 방법 Download PDFInfo
- Publication number
- KR20070000134A KR20070000134A KR1020050055639A KR20050055639A KR20070000134A KR 20070000134 A KR20070000134 A KR 20070000134A KR 1020050055639 A KR1020050055639 A KR 1020050055639A KR 20050055639 A KR20050055639 A KR 20050055639A KR 20070000134 A KR20070000134 A KR 20070000134A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- image sensor
- film resist
- bonding pad
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 16
- 239000011368 organic material Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- -1 acryl Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 206010034960 Photophobia Diseases 0.000 description 5
- 208000013469 light sensitivity Diseases 0.000 description 5
- 239000000049 pigment Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (8)
- (a) 광 감지부들 및 배선 본딩 패드가 형성된 반도체 기판 상에 보호층을 형성하는 단계와,(b) 상기 배선 본딩 패드 상부의 상기 보호층 일부를 제거하여 상기 배선 본딩 패드를 오픈하는 단계와,(c) 상기 보호층과 오픈된 상기 배선 본딩 패드의 상부 전면에 박막 레지스트를 형성하는 단계와,(d) 상기 박막 레지스트의 상부에 칼라 필터 어레이를 형성하는 단계와,(e) 상기 칼라 필터 어레이의 상부에 복수의 마이크로 렌즈를 형성하는 단계와,(f) 상기 배선 본딩 패드를 보호하고 있는 상기 박막 레지스트를 적어도 그 두께만큼 식각하여 상기 박막 레지스트를 제거하는 단계를 포함하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 박막 레지스트는 유기물질 계열로 형성하는 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 박막 레지스트는 열경화성 수지로 형성하는 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 3 항에 있어서,상기 열경화성 수지는 아크릴 계열의 물질인 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 하나에 있어서,상기 박막 레지스트는 50㎚ 이하의 두께로 형성하는 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 (f) 단계는, 상기 박막 레지스트의 식각 시에 상기 마이크로 렌즈간의 갭을 셀로우 식각하는 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항 또는 제 6 항에 있어서,상기 박막 레지스트는 산소 플라즈마 블랭크 식각으로 제거하는 것을 특징으로 하는 이미지 센서의 제조 방법.
- 제 1 항에 있어서,상기 (e) 단계는,(e-1) 상기 칼라 필터 어레이의 상부에 평탄화층을 형성하는 단계와,(e-2) 상기 평탄화층의 상부에 상기 마이크로 렌즈를 형성하는 단계를 포함하는 이미지 센서의 제조 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050055639A KR100664790B1 (ko) | 2005-06-27 | 2005-06-27 | 이미지 센서의 제조 방법 |
US11/476,223 US7678604B2 (en) | 2005-06-27 | 2006-06-26 | Method for manufacturing CMOS image sensor |
CNA2006100905502A CN1893025A (zh) | 2005-06-27 | 2006-06-27 | 用于制造cmos图像传感器的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050055639A KR100664790B1 (ko) | 2005-06-27 | 2005-06-27 | 이미지 센서의 제조 방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
KR20070000134A true KR20070000134A (ko) | 2007-01-02 |
KR20060136104A KR20060136104A (ko) | 2007-01-02 |
KR100664790B1 KR100664790B1 (ko) | 2007-01-04 |
Family
ID=37568020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050055639A KR100664790B1 (ko) | 2005-06-27 | 2005-06-27 | 이미지 센서의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7678604B2 (ko) |
KR (1) | KR100664790B1 (ko) |
CN (1) | CN1893025A (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7560295B2 (en) * | 2003-10-09 | 2009-07-14 | Aptina Imaging Corporation | Methods for creating gapless inner microlenses, arrays of microlenses, and imagers having same |
KR100640958B1 (ko) * | 2004-12-30 | 2006-11-02 | 동부일렉트로닉스 주식회사 | 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법 |
KR100649031B1 (ko) * | 2005-06-27 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100853096B1 (ko) * | 2006-12-20 | 2008-08-19 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
KR100866248B1 (ko) * | 2006-12-23 | 2008-10-30 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서의 제조방법 |
KR100802305B1 (ko) * | 2006-12-27 | 2008-02-11 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조방법 |
KR100835439B1 (ko) * | 2006-12-28 | 2008-06-04 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
KR100871553B1 (ko) * | 2007-03-14 | 2008-12-01 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
JP2008277800A (ja) * | 2007-05-03 | 2008-11-13 | Dongbu Hitek Co Ltd | イメージセンサの製造方法 |
JP4346655B2 (ja) * | 2007-05-15 | 2009-10-21 | 株式会社東芝 | 半導体装置 |
KR20080103632A (ko) * | 2007-05-25 | 2008-11-28 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR101035613B1 (ko) * | 2008-09-16 | 2011-05-19 | 주식회사 동부하이텍 | 씨모스 이미지 센서 |
US8039286B2 (en) * | 2009-08-19 | 2011-10-18 | United Microelectronics Corp. | Method for fabricating optical device |
EP2776798B1 (en) * | 2011-11-04 | 2023-12-13 | IMEC vzw | Spectral camera with integrated filters and multiple adjacent image copies projected onto sensor array |
US9768223B2 (en) * | 2011-12-21 | 2017-09-19 | Xintec Inc. | Electronics device package and fabrication method thereof |
US10820984B2 (en) | 2012-11-14 | 2020-11-03 | ImplantADJUST, LLC | Implant with elastomeric membrane and methods of fabrication thereof |
TWI502212B (zh) * | 2013-01-11 | 2015-10-01 | Pixart Imaging Inc | 光學裝置、使用微透鏡之感光元件及其製作方法 |
JP6168915B2 (ja) * | 2013-08-22 | 2017-07-26 | キヤノン株式会社 | 半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3254759B2 (ja) | 1992-09-25 | 2002-02-12 | ソニー株式会社 | 光学素子およびオンチップレンズの製造方法 |
JP2925444B2 (ja) * | 1993-10-05 | 1999-07-28 | シャープ株式会社 | 固体撮像素子およびその製造方法 |
JP3674209B2 (ja) * | 1997-01-23 | 2005-07-20 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
US5902704A (en) * | 1997-07-02 | 1999-05-11 | Lsi Logic Corporation | Process for forming photoresist mask over integrated circuit structures with critical dimension control |
KR100390822B1 (ko) * | 1999-12-28 | 2003-07-10 | 주식회사 하이닉스반도체 | 이미지센서에서의 암전류 감소 방법 |
KR100462757B1 (ko) | 2002-03-14 | 2004-12-20 | 동부전자 주식회사 | 이미지 센서용 반도체 소자 제조 방법 |
US6632700B1 (en) * | 2002-04-30 | 2003-10-14 | Taiwan Semiconductor Manufacturing Company | Method to form a color image sensor cell while protecting the bonding pad structure from damage |
US6861280B2 (en) * | 2002-10-25 | 2005-03-01 | Omnivision International Holding Ltd | Image sensor having micro-lenses with integrated color filter and method of making |
KR100504563B1 (ko) * | 2004-08-24 | 2005-08-01 | 동부아남반도체 주식회사 | 이미지 센서 제조 방법 |
-
2005
- 2005-06-27 KR KR1020050055639A patent/KR100664790B1/ko active IP Right Grant
-
2006
- 2006-06-26 US US11/476,223 patent/US7678604B2/en active Active
- 2006-06-27 CN CNA2006100905502A patent/CN1893025A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US7678604B2 (en) | 2010-03-16 |
KR100664790B1 (ko) | 2007-01-04 |
CN1893025A (zh) | 2007-01-10 |
US20060292734A1 (en) | 2006-12-28 |
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